CN106910690A - 引线框架带组件和处理方法 - Google Patents
引线框架带组件和处理方法 Download PDFInfo
- Publication number
- CN106910690A CN106910690A CN201611194856.2A CN201611194856A CN106910690A CN 106910690 A CN106910690 A CN 106910690A CN 201611194856 A CN201611194856 A CN 201611194856A CN 106910690 A CN106910690 A CN 106910690A
- Authority
- CN
- China
- Prior art keywords
- lead
- panel
- frame
- leadframe
- longitudinal direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003672 processing method Methods 0.000 title abstract description 3
- 238000000034 method Methods 0.000 claims abstract description 67
- 238000005520 cutting process Methods 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000000465 moulding Methods 0.000 description 7
- 208000003351 Melanosis Diseases 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000009434 installation Methods 0.000 description 3
- 238000010137 moulding (plastic) Methods 0.000 description 3
- 239000000206 moulding compound Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49565—Side rails of the lead frame, e.g. with perforations, sprocket holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4842—Mechanical treatment, e.g. punching, cutting, deforming, cold welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
本申请公开引线框架带组件和处理方法。一种处理具有相对的第一纵向端和第二纵向端以及定位在第一纵向端和第二纵向端之间的多个引线框架面板的引线框架带的方法,引线框架面板中的每一个包括引线框架部分的阵列。该方法包括将引线框架带移动到锯工位,301。该方法还包括利用多个横向延伸的锯切割来锯切引线框架导轨和引线框架面板,所述多个横向延伸的锯切割中的每一个延伸通过第一导轨和第二导轨以及定位在引线框架带的相邻面板之间的引线框架带的板连接器部分,302。
Description
技术领域
背景技术
集成电路(“IC”)封装通常包括安装在引线框架上并电连接到引线框架的一个或多个集成电路管芯。管芯和引线框架封装在塑料模制化合物中。引线框架的部分通过模制化合物暴露,使得管芯能够连接到外部电路。
在IC封装形成期间,将最终变为引线框架的结构是引线框架带(strip)的初始一体连接的引线框架部分。管芯安装在这些引线框架部分中的每一个上并与其电连接,同时引线框架部分保持一体地连接在引线框架带中。安装在引线框架部分中的每一个引线框架部分上的管芯通常被引线键合到引线框架部分的引线(引线安装在引线框架部分上),并且所述管芯随后被封装在模制化合物中。然后该模制的引线框架带组件被锯切(单粒化/切块)以将组件分离成单独的IC封装,每个IC封装包含引线框架和至少一个管芯。
发明内容
一种处理具有相对的第一和第二纵向端以及定位在第一纵向端和第二纵向端之间的多个引线框架面板的引线框架带的方法,所述引线框架带具有定位在引线框架带的相对横向侧上并且从引线框架带的第一纵向端延伸到第二纵向端的纵向延伸的引线框架导轨,引线框架面板中的每一个包括引线框架部分的阵列。该方法包括:将引线框架带移动到锯切工位;以及利用多个横向延伸的锯切割(saw cut)来切割引线框架导轨和引线框架面板,所述锯切割均延伸通过第一导轨和第二导轨以及定位在引线框架带的相邻面板之间的引线框架带的面板连接器部分。
一种在引线框架带单粒化期间减少刀片加热的方法包括:将引线框架带移动到锯工位;以及在与定位在引线框架带的面板之间的横向延伸的狭槽对准的引线框架带的部分处跨越切割引线框架带的导轨。
一种引线框架带组件包括:引线框架带,其具有相对的第一纵向端和第二纵向端以及定位在第一纵向端和第二纵向端之间的多个引线框架面板。引线框架面板中的每一个包括引线框架部分的阵列。第一和第二纵向延伸的导轨从引线框架带的第一纵向端延伸到第二纵向端并且定位在多个引线框架面板的第一横向侧和第二横向侧上并且一体地连接到引线框架面板。多个横向延伸的面板连接器部分定位在相邻的引线框架面板之间并且一体地连接相邻的引线框架面板。面板连接器部分均具有定位在第一导轨和第二导轨内侧的横向延伸的狭槽。横向延伸的面板连接器部分中的至少一个至少部分地由横向延伸的锯切割切断,所述横向延伸的锯切割延伸通过与连接器部分的狭槽对准的纵向延伸的导轨中的至少一个。
附图说明
图1是管芯安装和模制的引线框架带的顶视平面图,示出在模制带上执行的现有技术的通道1锯切(单粒化/切块)工艺。
图1A是图1的详细部分,其中管芯和模制化合物被移除以在待锯切割的区域中示出某些引线框架细节。
图1B是图1的引线框架带的示意性等距视图,示出由锯切割产生的引线框架面板的某些引线框架部分的加热。
图1C是支撑在锯台上的图1的引线框架带的锯切部分的等距剖视图。
图2是图1的引线框架带的顶视平面图,示出在其上执行的现有技术的通道2工艺。
图3是图2的引线框架带的顶视平面图,示出在其上执行的现有技术的通道3工艺。
图4是图3的引线框架带的顶视平面图,示出在其上执行的现有技术的通道4工艺。
图5是管芯安装和模制的引线框架带的顶视平面图,示出在其上执行的示例通道1工艺。
图5A是在待切割的图5的两个引线框架面板之间的示例连接器部分的详细顶视平面图。
图5B是图5的引线框架带的等距视图。
图5C是支撑在锯台上的图5的引线框架带的锯切部分的放大的剖视等距视图。
图6是图5的引线框架带的顶视平面图,示出在其上执行的示例通道2工艺。
图7是图6的引线框架带的顶视平面图,示出在其上执行的示例通道3工艺。
图8是图7的引线框架带的顶视平面图,示出在其上执行的示例通道4工艺。
图9是由本文描述的新方法制造的示例集成电路(IC)封装的横截面正视图。
图10是示出处理引线框架带的示例方法的流程图。
图11是在引线框架带单粒化期间减少刀片加热的示例方法的流程图。
具体实施方式
在形成集成电路封装的工艺中,集成电路(IC)管芯被安装在引线框架带的一体连接的引线框架部分的管芯附接焊盘上。管芯被引线键合到每个引线框架部分的引线或以其它方式电连接到每个引线框架部分的引线。然后整个引线框架带被模制,利用诸如塑料的模制化合物覆盖管芯和引线框架部分的部分。管芯安装和模制的引线框架带然后在以一系列四个“通道”执行的多个切割操作中被锯切。引线框架带在第一通道期间在锯台上具有预定取向并且在每个通道的锯切操作之后被重新定位在锯台上。
图1是管芯安装和模制的引线框架带10的顶视平面图,示出在模制带10上执行的现有技术的通道1工艺。IC管芯(未示出)位于模制化合物下方并且在图1中示出的模制引线框架带10上不可见。图1A是来自图1的顶部细节,其中管芯和模制化合物被移除以在待锯切的区域中示出某些引线框架细节。图1B是示出在带上执行的现有技术的通道1工艺并示出引线框架面板的某些引线框架部分的所得到的加热的示意性等距视图。
在图1-1C中示出的引线框架带10具有第一纵向端12和第二纵向端14。第一、第二、第三和第四面板22、24、26、28定位在两个纵向端12、14之间。第一和第二纵向延伸的导轨(rail)32、34被提供在面板22等的横向侧上。面板22、24、26、28均具有小于导轨的厚度的金属板厚度,例如,导轨的厚度的一半。第一和第二横向延伸的端导轨36、38定位在引线框架带10的端12、14处。四个面板22、24、26、28通过第一、第二和第三金属板连接器部分42、44、46彼此连接,所述第一、第二和第三金属板连接器部分42、44、46具有与面板22等相同的厚度。四个面板22、24、26、28中的每一个包括图1的一体连接的引线框架部分50的阵列,其包括单独的引线框架部分52、54、56、58等,如图1A和1B中所示。引线框架部分50以行和列的矩形栅格布置。在示出的实施例中,矩形栅格具有一体连接的引线框架部分50的11个横向延伸的行和15个纵向延伸的列,但是栅格可以具有任何期望数量的行和列。如图1和图1B中最优所示,在通道1工艺中沿着四个锯路径或“道路”制造横向锯切割62、64、66、68。这四个横向锯切割均完全延伸跨越每个面板并且通过面板的每个横向侧上的导轨32、34。
图1A是来自图1的细节的顶视平面图,其中管芯和模制化合物被移除以在待锯切的区域中示出某些引线框架细节。如图1A中最优所示,在每个面板22、24、26、28内的包括引线框架部分52、54、56、58的单独的引线框架部分50通过引线部分的腹板(web)60一体连接,该引线部分的腹板60围绕每个引线框架部分(例如,52、54、56、58)中的中心定位的引线框架管芯附接焊盘65。
图1B是示出在引线框架带10上执行的现有技术的通道1锯切割62、64、66、68的示意性等距视图。图1C是支撑在锯台67上的图1的引线框架带10的锯切部分的等距剖视图。每个面板22、24、26、28中的金属的厚度基本上小于纵向延伸的导轨32、34的厚度,例如纵向延伸的导轨32、34的厚度的一半。在图1C中,锯片65刚刚执行了使相邻引线框架部分分离的锯切割62。由于导轨32、34相对较厚,图1C的锯片65在其切割通过导轨(例如,导轨32)时通过摩擦而变热。然后,加热的刀片65加热引线并将引线变黑,所述引线例如,图1C的前两个引线框架部分例如52、54和图1B的相对的引线框架部分56、58的引线61,这在锯切割通过导轨32后遇到。黑化的引线在图1B和1C中用斑点阴影指示。图1C的黑化引线61是不期望的,因为它们增加引线的电阻并且对客户产生差的外观。锯切割62、64、66、68中的每一个形成在每个引线框架面板22、24、26和28的中间部分处。沿着四个锯切割62、64、66和68中的每一个在前两个引线框架部分(例如,引线框架部分52、54)中产生相同类型的缺陷。
图2是在通道1工艺之后的引线框架带10A的顶视平面图,示出在其上执行的现有技术的通道2工艺。在通道2工艺期间,引线框架带10A在垂直于在通道1工艺中的其原始取向的取向中重新定向在锯台上。然后进行平行锯切割72、74,其沿着面板的侧向边缘纵向延伸以将导轨32、34与引线框架带10A分离。这些锯切割72、74在邻近较厚导轨的引线面板的正常板厚部分中进行并且因此不产生过度的刀片加热。
图3是在通道2工艺之后的处理的引线框架带10B的顶视平面图,示出在其上执行的现有技术的通道3工艺。在通道3工艺期间,引线框架带10B的剩余部分再次旋转90度以使其与锯台重新定向。然后,产生多个横向延伸的锯切割80。这些锯切割80将纵向相邻的引线框架部分50分离。除了在通道1切割中进行的横向延伸的锯切割62、64、66、68之外,这些横向延伸的锯切割80将引线框架片(sheet)10上的所有纵向相邻的引线框架部分50分离。
图4是在通道3工艺之后的引线框架带10C的顶视平面图,示出在其上执行的现有技术的通道4工艺。引线框架带10C通过在锯台67上的90度旋转而重新定向(图1C中所示)。然后,进行多个纵向延伸的锯切割90以将横向相邻的引线框架部分50分离。因此,在通道4工艺之后,引线框架部分50都被分离并与单独的IC封装相关联。然而,来自图1B的每个面板22、24、26、28的四个引线框架部分52、54、56、58(现在是单独的IC封装)具有不期望的图1C的黑化引线61。
图5-8示出消除黑化引线的示例引线框架面板单粒化(singulation)工艺。
图5是示例管芯安装和模制的引线框架带110的顶视平面图,示出在其上执行的通道1工艺。图5A是示出两个引线框架面板之间的连接器部分142的详细顶视平面图。图5B是图5的引线框架带110的等距视图。图5C是支撑在锯台167上的图5的引线框架带110的锯切部分的剖视等距视图。
在图5-5C中示出的引线框架带110具有第一纵向端112和第二纵向端114。第一、第二、第三和第四面板122、124、126、128定位在两个纵向端112、114之间。第一和第二纵向延伸的导轨132、134位于面板122等的横向侧上。面板122、124、126、128具有比导轨132、134更小的厚度,例如,导轨厚度的一半。第一和第二横向延伸的端导轨136、138定位在引线框架带110的端112、114处。四个面板122、124、126、128通过第一、第二和第三金属板连接器部分142、144、146彼此连接,所述第一、第二和第三金属板连接器部分142、144、146具有与面板122等相同的厚度。
四个面板122、124、126、128中的每一个包括一体连接的引线框架部分150的阵列,所述引线框架部分150以行和列的矩形栅格布置。在图5-5C的所示实施例中,矩形栅格具有一体连接的引线框架部分150的11个横向延伸的行和15个纵向延伸的列。然而,栅格可以具有任何期望数量的这样的行和列。为了开始通道1单粒化工艺,在图5C中,引线框架带110被放置在锯台167上。如在图5和图5B中所示,在该新通道1工艺中沿着三个锯路径(“道路”)进行横向锯切割162、164、166。这三个横向锯切割162、164、166完全延伸跨越每个面板并且通过在面板122等的每个横向侧上的导轨132、134。与现有技术的通道1工艺中的锯切割不同,锯切割162、164、166均在面板连接器部分142、144、146的对应一个中进行,并且更精确地,每个锯切割162、164、166与对应的连接器部分142、144、146中的横向延伸的狭槽143对准。
图5A中示出连接器部分142的顶部详细视图。每个连接器部分包括在其中心部分处的横向延伸的狭槽143,其几乎延伸到导轨132、134。分度孔(indexing hole)145、147被提供在与狭槽143的端相对的导轨132、134中的每个导轨中。在一个实施例中,狭槽143具有0.500毫米的宽度,并且进行锯切割162、164和166的锯片165的刀片厚度为约0.350毫米。由于狭槽143比锯片165更宽,所以当锯片沿着狭槽143移动时锯片不切割任何金属。当锯片穿过位于每个狭槽143的端附近的分度孔145、147时,锯片也不切割任何金属。由切割通过由锯片165实际切割的每个导轨132、134的小部分而引起的刀片加热不是问题,因为引线框架引线离锯切路径太远而不会受影响。此外,与狭槽143对准的切割延长了刀片寿命,因为在刀片进入狭槽143后,它不与任何金属切割接触,直到其离开狭槽。此外,切割穿过分度孔145、147,所述分度孔145、147类似于狭槽,包括不产生刀片磨损的空空间。
图6示出在离开通道1工艺的引线框架带组件110A已经相对于图5取向旋转90度之后执行的通道2工艺。在该通道2工艺中,在邻近每个纵向延伸的导轨132、134的面板120、122、124和126中进行纵向锯切割172、174。除了通道1的工艺之外,该工艺导致纵向导轨132至134中的每个从引线框架组件110A切断,所述纵向导轨132至134中的每个在通道1工艺中已经均被切割成四个分离件。然后,在锯切操作完成之后,(例如通过手)移除这些多个导轨件。
图7示出移除了导轨132、134的引线框架片组件10B。组件10B已经在锯台167(图5C中所示)上从其在图6中的取向旋转90度。然后执行通道3工艺,即,进行分离纵向相邻引线框架部分150的多个横向锯切割180。在其中每个面板中具有11行的引线框架部分150的所示实施例中,在每个面板中进行12个平行切割,其包括切断相关联的横向延伸的端导轨136、138和/或面板连接器部分142、144、146的切割。
在图8中,引线框架组件110C已经从图7所示的取向旋转90度。端导轨136、138和面板连接器部分142、144、146已经被移除并且通道4工艺开始。通道4工艺包括进行纵向延伸的锯切割190,其将横向相邻的引线框架部分150分离成多个分离的IC封装,诸如图9中示出的IC封装200。
图9是参照图5-8通过本文描述的工艺生产的IC封装200的横截面正视图。IC封装200可以包括具有管芯附接焊盘212和多个引线214的引线框架210。至少一个管芯216(正如管芯附接环氧树脂217)被附接到管芯附接焊盘212。管芯216上的接触区域可以常规地通过键合线218电连接到多个引线214。整个组件用塑料模制化合物220(诸如塑料)覆盖,引线框架210的部分通过塑料模制化合物220被暴露。
图10是示出处理具有相对的第一纵向端和第二纵向端以及定位在第一纵向端和第二纵向端之间的多个引线框架面板的引线框架带的方法的流程图,所述引线框架面板中的每一个包括引线框架部分的阵列。如方框301处所示,该方法包括将引线框架带移动到锯工位(station),并且如方框302处所示,利用多个横向延伸的锯切割来锯切引线框架导轨和面板,每个锯切割延伸通过第一导轨和第二导轨以及定位在引线框架带的相邻面板之间的引线框架带的面板连接器部分。
图11是示出在引线框架带单粒化期间减少刀片加热的方法的流程图。如方框311处所示,该方法包括将引线框架带移动到锯工位。如方框312处所示,该方法还包括在与定位在引线框架带的面板之间的横向延伸的狭槽对准的引线框架带的部分处跨越切割引线框架带的导轨。
本文详细公开了模制引线框架单粒化工艺的实施例,该模制引线框架单粒化工艺延长单粒化锯片和在这些工艺期间产生的各种引线框架带组件的寿命。在阅读本公开之后,此类工艺和引线框架带组件的各种替代实施例对于本领域技术人员来说将变得明显。除受现有技术的限制外,旨在将权利要求的语言宽泛地解释为覆盖此类替代实施例。
Claims (20)
1.一种引线框架带组件,其包括:
引线框架带,其具有相对的第一纵向端和第二纵向端以及定位在所述第一纵向端和所述第二纵向端之间的多个引线框架面板,所述引线框架面板中的每个包括引线框架部分的阵列;
第一纵向延伸的导轨和第二纵向延伸的导轨,其从所述引线框架带的所述第一纵向端延伸到所述第二纵向端并且分别位于所述多个引线框架面板的第一横向侧和第二横向侧上并且一体地连接到所述引线框架面板;以及
多个横向延伸的面板连接器部分,其定位在相邻的引线框架面板之间并且一体地连接所述相邻的引线框架面板,所述面板连接器部分均具有定位在所述第一导轨和所述第二导轨的内侧的横向延伸的狭槽;
其中所述横向延伸的面板连接器部分中的至少一个至少部分地由横向延伸的锯切割切断,所述横向延伸的锯切割延伸通过与连接器部分狭槽对准的所述纵向延伸的导轨中的至少一个。
2.根据权利要求1所述的引线框架组件,其中在所述面板连接器部分中的所述狭槽与所述引线框架部分中的相邻引线框架部分间隔开。
3.根据权利要求1所述的引线框架组件,其中每个引线框架带包括四个面板部分。
4.根据权利要求1所述的引线框架组件,其中所述横向延伸的面板连接器部分中的每个由锯切割切断,所述锯切割也延伸通过所述第一纵向延伸的导轨和所述第二纵向延伸的导轨的相邻部分。
5.根据权利要求4所述的引线框架组件,其中所述第一导轨和第二导轨通过第一纵向延伸的锯切割和第二纵向延伸的锯切割与所述多个面板分离。
6.根据权利要求5所述的引线框架组件,其中多个横向延伸的锯切割在所述面板中的每个面板中使纵向相邻的引线框架部分分离。
7.根据权利要求6所述的引线框架组件,其中多个纵向延伸的锯切割在所述引线框架面板中的每个引线框架面板中使横向相邻的引线框架部分分离。
8.根据权利要求7所述的引线框架组件,其中所述引线框架部分中的每个具有附接到其上的集成电路管芯即IC管芯。
9.根据权利要求8所述的引线框架组件,其中利用模制化合物覆盖所述引线框架面板中的每个。
10.根据权利要求9所述的引线框架组件,其中所述横向延伸的锯切割和所述纵向延伸的锯切割延伸通过覆盖所述引线框架面板中的每个的所述模制化合物并将所述模制面板分成多个IC封装。
11.一种处理具有相对的第一纵向端和第二纵向端以及定位在所述第一纵向端和所述第二纵向端之间的多个引线框架面板的引线框架带的方法,所述引线框架带具有定位在所述引线框架带的相对横向侧上的纵向延伸的引线框架导轨,每个导轨从所述引线框架带的所述第一纵向端延伸到所述第二纵向端,所述引线框架面板中的每个包括引线框架部分的阵列,所述方法包括:
将所述引线框架带移动到锯切工位;以及
利用多个横向延伸的锯切割来切割所述引线框架导轨和所述引线框架面板,所述多个横向延伸的锯切割均延伸通过所述第一导轨和所述第二导轨以及定位在所述引线框架带的相邻面板之间的所述引线框架带的面板连接器部分。
12.根据权利要求11所述的方法,其中所述进行所述多个横向延伸的锯切割包括进行均与每个所述面板连接器部分中的横向延伸的狭槽对准的锯切割。
13.根据权利要求12所述的方法,其进一步包括:利用多个纵向延伸的锯切割来锯切所述引线框架带,所述多个纵向延伸的锯切割将所述纵向延伸的导轨与所述多个面板分离。
14.根据权利要求13所述的方法,其进一步包括移除由所述锯切割分离的所述导轨的部分。
15.根据权利要求14所述的方法,其进一步包括利用多个横向延伸的锯切割分离纵向相邻的引线框架部分。
16.根据权利要求14所述的方法,其进一步包括利用多个纵向延伸的锯切割分离横向相邻的引线框架部分。
17.根据权利要求11所述的方法,其进一步包括在所述引线框架部分中的每个引线框架部分上安装管芯。
18.根据权利要求17所述的方法,其进一步包括用模制化合物覆盖所述引线框架部分和管芯。
19.根据权利要求18所述的方法,其进一步包括利用多个锯切割来切割通过覆盖所述引线框架部分和管芯的所述模制化合物,以将所述引线框架部分分离成多个引线框架封装。
20.一种在引线框架带单粒化期间减少刀片加热的方法,其包括:
将引线框架带移动到锯工位;以及
在与定位在所述引线框架带的面板之间的横向延伸的狭槽对准的所述引线框架带的部分处跨越切割所述引线框架带的导轨。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202310396697.8A CN116313831A (zh) | 2015-12-22 | 2016-12-21 | 引线框架带组件和处理方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/978,425 US9698085B1 (en) | 2015-12-22 | 2015-12-22 | Leadframe strip assembly and method of processing |
US14/978,425 | 2015-12-22 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202310396697.8A Division CN116313831A (zh) | 2015-12-22 | 2016-12-21 | 引线框架带组件和处理方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN106910690A true CN106910690A (zh) | 2017-06-30 |
Family
ID=59066657
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201611194856.2A Pending CN106910690A (zh) | 2015-12-22 | 2016-12-21 | 引线框架带组件和处理方法 |
CN202310396697.8A Pending CN116313831A (zh) | 2015-12-22 | 2016-12-21 | 引线框架带组件和处理方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202310396697.8A Pending CN116313831A (zh) | 2015-12-22 | 2016-12-21 | 引线框架带组件和处理方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9698085B1 (zh) |
CN (2) | CN106910690A (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10964629B2 (en) | 2019-01-18 | 2021-03-30 | Texas Instruments Incorporated | Siderail with mold compound relief |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1767186A (zh) * | 2004-10-04 | 2006-05-03 | 雅马哈株式会社 | 引线框架及其半导体封装 |
CN101355073A (zh) * | 2007-07-23 | 2009-01-28 | 国家半导体公司 | 引线框面板 |
CN102456582A (zh) * | 2010-10-26 | 2012-05-16 | 联钢技术国际有限公司 | 用于制造模制引线框架的工艺 |
US20150332989A1 (en) * | 2014-05-15 | 2015-11-19 | Texas Instruments Incorporated | Gang clips having distributed-function tie bars |
-
2015
- 2015-12-22 US US14/978,425 patent/US9698085B1/en active Active
-
2016
- 2016-12-21 CN CN201611194856.2A patent/CN106910690A/zh active Pending
- 2016-12-21 CN CN202310396697.8A patent/CN116313831A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1767186A (zh) * | 2004-10-04 | 2006-05-03 | 雅马哈株式会社 | 引线框架及其半导体封装 |
CN101355073A (zh) * | 2007-07-23 | 2009-01-28 | 国家半导体公司 | 引线框面板 |
CN102456582A (zh) * | 2010-10-26 | 2012-05-16 | 联钢技术国际有限公司 | 用于制造模制引线框架的工艺 |
US20150332989A1 (en) * | 2014-05-15 | 2015-11-19 | Texas Instruments Incorporated | Gang clips having distributed-function tie bars |
Also Published As
Publication number | Publication date |
---|---|
US9698085B1 (en) | 2017-07-04 |
CN116313831A (zh) | 2023-06-23 |
US20170179008A1 (en) | 2017-06-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6800507B2 (en) | Semiconductor device and a method of manufacturing the same | |
US7008825B1 (en) | Leadframe strip having enhanced testability | |
US5070039A (en) | Method of making an integrated circuit using a pre-served dam bar to reduce mold flash and to facilitate flash removal | |
US6566740B2 (en) | Lead frame for a semiconductor device and method of manufacturing a semiconductor device | |
US6886247B2 (en) | Circuit board singulation methods | |
US9337130B2 (en) | Leadframe strip and leadframes | |
US20210005540A1 (en) | Method of making leadframe strip | |
US9190351B2 (en) | Semiconductor device with webbing between leads | |
US20070224781A1 (en) | Separation method for cutting semiconductor package assemblage for separation into semiconductor packages | |
US6885086B1 (en) | Reduced copper lead frame for saw-singulated chip package | |
CN106910690A (zh) | 引线框架带组件和处理方法 | |
JP2007294715A (ja) | 半導体装置の製造方法 | |
CN101894822B (zh) | 半导体封装用导线架条构造 | |
US20220223503A1 (en) | Spring bar leadframe, method and packaged electronic device with zero draft angle | |
US5495780A (en) | Method for sharpening an IC lead-frame punch | |
CN105097755A (zh) | 单体化封装的方法和引线框 | |
CN104347570B (zh) | 无引线型半导体封装及其组装方法 | |
CN109904081B (zh) | 基于idf引线框架的半导体产品的封装方法 | |
CN110637364B (zh) | 改进的引线框系统 | |
JP2736123B2 (ja) | 半導体用リードフレーム | |
KR20090035301A (ko) | 반도체 패키지 제조용 싱귤레이션 장치 | |
KR970006523Y1 (ko) | 반도체 제조용 리드프레임 구조 | |
CN109545694A (zh) | 一种破损基板的模封方法 | |
JP2005333044A (ja) | 半導体装置の製造方法 | |
JPH07221245A (ja) | 半導体装置用リードフレーム |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170630 |
|
RJ01 | Rejection of invention patent application after publication |