CN106909194B - It is a kind of that there is high-order temperature compensated bandgap voltage reference - Google Patents
It is a kind of that there is high-order temperature compensated bandgap voltage reference Download PDFInfo
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- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
There is high-order temperature compensated bandgap voltage reference the invention discloses a kind of, including three output Switching capacitors, switching capacity module one and switching capacity module two, input voltage VCCThe input terminal of three output Switching capacitors is connected to, three output Switching capacitors output terminals export three road bias voltage V respectivelyEB1、VEB2And VEB3, first via bias voltage VEB1It is connected to the first input end of switching capacity module one, the second road bias voltage VEB2It is connected to the second input terminal of switching capacity module one and the second input terminal of switching capacity module two, third road bias voltage VEB3The third input terminal of switching capacity module two is connected to, the output terminal of switching capacity module one is connected to the first input end of switching capacity module two, the output terminal output reference voltage V of switching capacity module twoREF.The present invention is based on Switch capacitor structures, greatly reduce volume circuit complexity, realize and eliminate the high-order temperature compensated of higher order term and band-gap reference, obtain relatively low temperature coefficient.
Description
Technical field
The present invention relates to Analogous Integrated Electronic Circuits, band-gap reference design fields, and in particular to one kind has high-order temperature compensated
Bandgap voltage reference.
Background technology
Bandgap voltage reference is a base unit module in integrated circuit, is widely used in various Analogous Integrated Electronic Circuits
In chip, such as LNA, Mixer, ADC, precision comparator, voltage-stablizer, DC/DC converters and hybrid digital-analog integrated circuit
In chip, such as D-LDO, VCO, PLL.
Traditional bandgap voltage reference includes bipolar transistor T1, T2, T3, error amplifier A1, integrated MOS transistor
MP1, MP2, MP3 and resistance R1, R2 by mirror image MP1 branch currents, flow it through resistance R2 to obtain and the relevant electricity of temperature
Item is pressed, then is connected with T3, finally obtains a substantially temperature independent output voltage VREF.
Although traditional bandgap voltage reference can preferably be eliminated by linear combination with the relevant first order of temperature,
But due to bipolar transistor base-emitter voltage expression formula, there are higher order terms in itself, cause its temperature characterisitic still not ideal enough,
Particularly with low-voltage output a reference source, temperature coefficient can reach ppm up to a hundred；Further, since traditional bandgap reference voltage
Source structure is needed using operational amplifier and more resistance, so circuit complexity is higher, supply voltage is higher and domain face
Product is larger.
Invention content
The purpose of the present invention is in view of the above shortcomings of the prior art, provide a kind of Switch capacitor structure that is based on to have height
The bandgap voltage reference of rank temperature-compensating while circuit complexity is reduced, using the method for high-order compensation, reduces band
The temperature coefficient of gap reference voltage source.
The purpose of the present invention can be achieved through the following technical solutions：
It is a kind of that there is high-order temperature compensated bandgap voltage reference, including three output Switching capacitors, switch electricity
Molar block one and switching capacity module two, wherein, input voltage VCCIt is connected to the input of the three output Switching capacitors
End, three output Switching capacitors output terminals export three road bias voltage V respectivelyEB1、VEB2And VEB3, first via bias voltage
VEB1It is connected to the first input end of the switching capacity module one, the second road bias voltage VEB2It is connected to the switching capacity mould
Second input terminal of the second input terminal of block one and the switching capacity module two, third road bias voltage VEB3It is connected to described
The third input terminal of switching capacity module two, the output terminal of the switching capacity module one are connected to the switching capacity module two
First input end, the output terminal output reference voltage V of the switching capacity module twoREF。
Further, the three output Switching capacitors include three output capacitance boost modules, clamp circuit module
First, clamp circuit module two and clamp circuit module three, input voltage VCCIt is connected to the defeated of the three output capacitances boost module
Enter end, the first output terminal output V of three output capacitance boost modulesCC1, and it is connected to the input of the clamp circuit module one
End, the output terminal output voltage V of clamp circuit module oneEB1；The second output terminal output of the three output capacitances boost module
VCC2, and the input terminal of the clamp circuit module two is connected to, the output terminal output voltage V of clamp circuit module twoEB2；It is described
The third output terminal output V of three output capacitance boost modulesCC3, and it is connected to the input terminal of the clamp circuit module three, clamper
The output terminal output voltage V of circuit module threeEB3。
Further, the three output capacitances boost module includes eight switch S131、S132、S133、S134、S231、S232、
S233、S234With three capacitance CC1、CC2、CC3, wherein, input voltage VCCIt is connected to the switch S131、S132、S134And S233
One connecting pin switchs S131Second connection end be connected to the capacitance CC2The first connecting pin and the switch S231First connect
Meet end, the capacitance CC2Second connection end be connected to the switch S233Second connection end, the switch S231Second connect
End is connect as the first output terminal of three output capacitance boost modules and exports VCC1；The switch S132Second connection end is connected to institute
State switch S232The first connecting pin and the capacitance CC1The first connecting pin, the capacitance CC1Second connection end be connected to institute
State switch S233Second connection end, the switch S233Second connection end be connected to the capacitance CC3The first connecting pin and institute
State switch S133The first connecting pin, the switch S232Second connection end as three output capacitance boost modules third export
It holds and exports VCC3；The switch S133Second connection end ground connection, the capacitance CC3Second connection end be connected to the switch
S134Second connection end and the switch S234The first connecting pin, the switch S234Second connection end as three output electricity
Hold the second output terminal of boost module and export VCC2。
Further, the clamp circuit module one includes capacitance C31With the first bipolar transistor Q1, the capacitance C31's
First connecting pin is connected to the first bipolar transistor Q1Emitter, the capacitance C31Second connection end ground connection, it is described
First bipolar transistor Q1Base stage and grounded collector, the first bipolar transistor Q1Emitter as clamp circuit mould
The output terminal of block one, and output voltage VEB1。
Further, the clamp circuit module two includes capacitance C32With the second bipolar transistor Q2, the capacitance C32's
First connecting pin is connected to the second bipolar transistor Q2Emitter, the capacitance C32Second connection end ground connection, it is described
Second bipolar transistor Q2Base stage and grounded collector, the second bipolar transistor Q2Emitter as clamp circuit mould
The output terminal of block two, and output voltage VEB2。
Further, the clamp circuit module three includes the resistance R being proportionate with temperatureT, capacitance C33It is double with third
Gated transistors Q3, the resistance R being proportionate with temperatureTSecond connection end be connected to the third bipolar transistor Q3's
Emitter and capacitance C33The first connecting pin, capacitance C33Second connection end ground connection, third bipolar transistor Q3Base stage sum aggregate
Electrode is grounded, third bipolar transistor Q3Output terminal of the emitter as clamp circuit module three, and output voltage VEB3。
Further, the switching capacity module one includes switch S14With b same switch capacitor cell, b is arbitrarily just
Integer, wherein, the first output terminal output V of the three output Switching capacitorsEB1, and it is connected to the switching capacity list
The first input end and the switch S of member14Second connection end, the switch S14The first connecting pin be connected to the switch
Second input terminal of capacitor cell；The second output terminal output V of the three output Switching capacitorsEB2, and be connected to described
The third input terminal of switching capacity unit；The b switching capacity unit cascades successively, b-th switching capacity unit
Output terminal of the output terminal as the switching capacity module one, and output voltage b Δs VEB12+VEB1；
Further, the switching capacity module two includes c same switch capacitor cell, and c is identical with b meanings, wherein,
The second output terminal output V of the three output Switching capacitorsEB2, and it is connected to the first defeated of the switching capacity unit
Enter end, the output terminal of the switching capacity module one is connected to the second input terminal of the switching capacity unit, three output
The third output terminal output V of Switching capacitorsEB3, and it is connected to the third input terminal of the switching capacity unit, the c
A switching capacity unit cascades successively, the output of the output terminal of c-th of switching capacity unit as the switching capacity module two
End, and output reference voltage VREF。
Further, the switching capacity unit includes：Three switch S241、S242、S14With capacitance C41, wherein, it is described to open
The first input end for closing capacitor cell is connected to the switch S241Second connection end, and as the switching capacity unit
First output terminal, the switch S241The first connecting pin connect the capacitance C41The first connecting pin and the switch S14
One connecting pin, the switch S14Second output terminal of the second connection end as the switching capacity unit, the switching capacity
Second input terminal of unit is connected to the capacitance C41Second connection end and the switch S242Second connection end, it is described to open
The third input terminal for closing capacitor cell is connected to the switch S242The first connecting pin, and as the switching capacity unit
Third output terminal.
Further, the switch S131、S132、S133、S134、S14It must simultaneously close off or open simultaneously；The switch
S231、S232、S233、S234、S241、S242On off state and the switch S131、S132、S133、S134、S14On off state it is opposite.
Further, the output terminal of the switching capacity module one and switching capacity module two is required for additional one in parallel
Capacitance, to the output voltage b Δs V of the switching capacity module one and switching capacity module twoEB12+VEB1And VREFCarry out voltage stabilizing filter
Wave processing.
Compared with prior art, the present invention having the following advantages that and advantageous effect：
Compared with prior art, bandgap voltage reference of the invention is without the high-precision in traditional bandgap reference voltage source
Current mirror, start-up circuit and high PSRR amplifier, based on Switch capacitor structure, not only greatly reduce circuit complexity,
And realize that linear combination has eliminated higher order term by switching capacity, the high-order temperature compensated of band-gap reference is realized, so as to obtain
Obtained relatively low temperature coefficient.
Description of the drawings
Fig. 1 is the structure diagram of traditional bandgap reference voltage source.
Fig. 2 is the system block diagram with high-order temperature compensated bandgap voltage reference of the embodiment of the present invention.
Fig. 3 is the schematic diagram that the embodiment of the present invention three exports Switching capacitors.
Fig. 4 is the schematic diagram of switch capacitance module one.
Fig. 5 is the schematic diagram of switch capacitance module two.
Fig. 6 is the output of clamp circuit of embodiment of the present invention module one, clamp circuit module two and clamp circuit module three
Voltage VEB1、VEB2And VEB3Temperature curve schematic diagram.
Fig. 7 is temperature curve compensation effect schematic diagram of the embodiment of the present invention.
Specific embodiment
With reference to embodiment and attached drawing, the present invention is described in further detail, but embodiments of the present invention are unlimited
In this.
Embodiment：
The structure of traditional bandgap reference voltage source as shown in Figure 1, the present embodiment based on to traditional bandgap reference voltage source
Improve, provide it is a kind of have high-order temperature compensated bandgap voltage reference, as shown in Fig. 2, including three export switching capacities
Converter, switching capacity module one and switching capacity module two, wherein, input voltage VCCIt is connected to the three output switching capacity
The input terminal of converter, three output Switching capacitors output terminals export three road bias voltage V respectivelyEB1、VEB2And VEB3, the
Bias voltage V all the wayEB1It is connected to the first input end of the switching capacity module one, the second road bias voltage VEB2It is connected to institute
State the second input terminal of switching capacity module one and the second input terminal of the switching capacity module two, third road bias voltage
VEB3It is connected to the third input terminal of the switching capacity module two, the output terminal of the switching capacity module one is connected to described
The first input end of switching capacity module two, the output terminal output reference voltage V of the switching capacity module twoREF。
Wherein, the effect of the three output Switching capacitors is to carry out boosting processing to single input voltage, and make
Bipolar transistor Q1、Q2、Q3Diode mode is operated in, then carries out three tunnel outputs.The effect of the switching capacity module one is
Linear combination is carried out to input signal, output eliminates the reference voltage of temperature single order item.The effect of the switching capacity module two
It is that linear combination is carried out to input signal, output eliminates the reference voltage of temperature higher order term.
Further, the schematic diagram of the three output Switching capacitors including three output capacitances as shown in figure 3, boost
Module, clamp circuit module one, clamp circuit module two and clamp circuit module three, input voltage VCCIt is connected to three output
The input terminal of capacitance boost module, the first output terminal output V of three output capacitance boost modulesCC1, and it is connected to the clamper electricity
The input terminal of road module one, the output terminal output voltage V of clamp circuit module oneEB1；The of the three output capacitances boost module
Two output terminals export VCC2, and the input terminal of the clamp circuit module two is connected to, the output terminal output of clamp circuit module two
Voltage VEB2；The third output terminal output V of the three output capacitances boost moduleCC3, and it is connected to the clamp circuit module three
Input terminal, the output terminal output voltage V of clamp circuit module threeEB3。
Wherein, the three output capacitances boost module includes eight switch S131、S132、S133、S134、S231、S232、S233、
S234With three capacitance CC1、CC2、CC3, wherein, input voltage VCCIt is connected to the switch S131、S132、S134And S233First connect
End is connect, switchs S131Second connection end be connected to the capacitance CC2The first connecting pin and the switch S231First connection
End, the capacitance CC2Second connection end be connected to the switch S233Second connection end, the switch S231Second connection
It holds the first output terminal as three output capacitance boost modules and exports VCC1；The switch S132Second connection end is connected to described
Switch S232The first connecting pin and the capacitance CC1The first connecting pin, the capacitance CC1Second connection end be connected to it is described
Switch S233Second connection end, the switch S233Second connection end be connected to the capacitance CC3The first connecting pin and described
Switch S133The first connecting pin, the switch S232Third output terminal of the second connection end as three output capacitance boost modules
And export VCC3；The switch S133Second connection end ground connection, the capacitance CC3Second connection end be connected to the switch S134
Second connection end and the switch S234The first connecting pin, the switch S234Second connection end as three output capacitance liters
The second output terminal of die block simultaneously exports VCC2。
The switch S131、S132、S133、S134When being closed at, input voltage VCCTo the capacitance CC1、CC2、CC3It is filled
Electricity, the capacitance CC1、CC2、CC3First connecting pin will be charged to VCC；The switch S131、S132、S133、S134When simultaneously switching off, institute
State switch S231、S232、S233、S234When being closed at, the capacitance CC1、CC2、CC3First connection terminal potential be clamped at VCC
On, then the capacitance CC1、CC2、CC3Second connection end current potential moment will be charged to 2VCC, and as three output capacitances boosting mould
Tri- tunnels of Kuai export.
Wherein, the clamp circuit module one includes capacitance C31With the first bipolar transistor Q1, the capacitance C31First
Connecting pin is connected to the first bipolar transistor Q1Emitter, the capacitance C31Second connection end ground connection, described first
Bipolar transistor Q1Base stage and grounded collector, the first bipolar transistor Q1Emitter as clamp circuit module one
Output terminal, and output voltage VEB1.The clamp circuit module two includes capacitance C32With the second bipolar transistor Q2, the electricity
Hold C32The first connecting pin be connected to the second bipolar transistor Q2Emitter, the capacitance C32Second connection end connect
Ground, the second bipolar transistor Q2Base stage and grounded collector, the second bipolar transistor Q2Emitter as clamper
The output terminal of circuit module two, and output voltage VEB2.Wherein, the capacitance C31Effect be to filter out the clamp circuit module
One input voltage ripple keeps bipolar transistor Q1Emitter voltage be clamped at VEB1On；The capacitance C32Effect be
The input voltage ripple of the clamp circuit module two is filtered out, keeps bipolar transistor Q2Emitter voltage be clamped at VEB2
On.
The input current of the clamp circuit module one and clamp circuit module two, i.e., described bipolar transistor Q1、Q2Hair
Emitter current, it is temperature independent, it can obtain：
Wherein Vg0Represent value of the diode voltage when temperature is 0K；C, D represents temperature independent constant；T represents heat
Mechanics temperature；η represents constant related to technique, temperature independent；VTRepresent thermal voltage.
The clamp circuit module three includes the resistance R being proportionate with temperatureT, capacitance C33With third bipolar transistor
Q3, the resistance R being proportionate with temperatureTSecond connection end be connected to the third bipolar transistor Q3Emitter and
Capacitance C33The first connecting pin, capacitance C33Second connection end ground connection, third bipolar transistor Q3Base stage and grounded collector,
Third bipolar transistor Q3Output terminal of the emitter as clamp circuit module three, and output voltage VEB3.The capacitance C33's
Effect is to filter out the input voltage ripple of the clamp circuit module three, keeps bipolar transistor Q3Emitter voltage clamped down on
In VEB3On.The resistance R being proportionate with temperatureTEffect be for bipolar transistor Q3It is in positive that emitter, which is provided with temperature,
The input current of pass, therefore can obtain：
Wherein Vg0Represent value of the diode voltage when temperature is 0K；C、D1Represent temperature independent constant；T represents heat
Mechanics temperature；η represents constant related to technique, temperature independent；VTRepresent thermal voltage.
Further, the schematic diagram of the switching capacity module one is as shown in figure 4, including switching S14With b same switch
Capacitor cell, b are arbitrary integer, wherein, the first output terminal output V of the three output Switching capacitorsEB1, and connect
First input end and the switch S to the switching capacity unit14Second connection end, the switch S14First connection
End is connected to the second input terminal of the switching capacity unit；The second output terminal output of the three output Switching capacitors
VEB2, and it is connected to the third input terminal of the switching capacity unit；The b switching capacity unit cascades successively, b-th of institute
State output terminal of the output terminal of switching capacity unit as the switching capacity module one, and output voltage b Δs VEB12+VEB1.Institute
The schematic diagram of switching capacity module two is stated as shown in figure 5, including c same switch capacitor cell, wherein, the three output switch
The second output terminal output V of capacitive transducerEB2, and the first input end of the switching capacity unit is connected to, the switch electricity
The output terminal of molar block one is connected to the second input terminal of the switching capacity unit, the three output Switching capacitors
Third output terminal exports VEB3, and be connected to the third input terminal of the switching capacity unit, the c switching capacity unit according to
Secondary cascade, the output terminal of the output terminal of c-th of switching capacity unit as the switching capacity module two, and output reference voltage
VREF。
Further, the switching capacity unit includes：Three switch S241、S242、S14With capacitance C41, wherein, it is described to open
The first input end for closing capacitor cell is connected to the switch S241Second connection end, and as the switching capacity unit
First output terminal, the switch S241The first connecting pin connect the capacitance C41The first connecting pin and the switch S14
One connecting pin, the switch S14Second output terminal of the second connection end as the switching capacity unit, the switching capacity
Second input terminal of unit is connected to the capacitance C41Second connection end and the switch S242Second connection end, it is described to open
The third input terminal for closing capacitor cell is connected to the switch S242The first connecting pin, and as the switching capacity unit
Third output terminal.
Further, the clamp circuit module one, the clamp circuit module two, the clamp circuit module three it is defeated
Go out voltage VEB1、VEB2、VEB3Curve graph as shown in fig. 6, VEB1、VEB2、VEB3With the negatively correlated relationship of temperature, and VEB1Slope is big
In VEB3Slope is more than VEB2Slope.
In switching capacity module one, the switch S of the switching capacity unit241、S242During closure, capacitance C41The electricity at both ends
Pressure will be charged to VEB1-VEB2：
ΔVBE=VEB1-VEB2
It can be obtained by volt-ampere of characteristic diode：
ΔVBE=VTln(n)
The n is the first bipolar transistor Q1With the second bipolar transistor Q2Number ratio, 8 are usually taken, at this point, Δ VBEIt is
Single order item about thermodynamic temperature T.
The switch S of the switching capacity unit14During closure, the second input terminal input voltage of switching capacity module one is clamped
System is in VEB1, b capacitance C at this time41Series connection, since capacitance both end voltage cannot be mutated, so the switching capacity module one
Output voltage be b Δs VEB12+VEB1。
Wherein, k is Boltzmann constant, and C, D represent temperature independent constant, and T is thermodynamic temperature, and q represents charge
The size of amount：
In switching capacity module two, the switch S of the switching capacity unit241、S242During closure, the capacitance C41Both ends
Voltage will be charged to VEB1-VEB3, i.e.,：
The capacitance C41The voltage V at both endsEB1-VEB3Higher order term for temperature.
The switch S of the switching capacity unit14During closure, the second input terminal input voltage of switching capacity module two is clamped
System is in b Δs VEB12+VEB1, c capacitance C at this time41Series connection, since capacitance both end voltage cannot be mutated, so the switch electricity
The output voltage of molar block two is b Δs VEB12+VEB1+c(VEB1-VEB3), the reference voltage finally exported is：
So the temperature single order item and higher order term of the reference voltage that can disappear as long as appropriate b and c values are chosen.
C=η
WhenDuring c=0, first compensation phase bandgap voltage reference is exported；When
During c=η, high-order compensation band gap reference voltage is exported.Its final effect is as shown in fig. 7, Δ VEB12With temperature correlation,
VEB1With the negatively correlated relationship of temperature, Δ VEB12With VEB1Linear combination is carried out according to b values, so as to reach single order temperature-compensating effect
Fruit, the main parabolically type of curve.ΔVEB13Higher order relationship is presented with temperature, by c times of Δ VEB13With single order temperature compensation curve
Linear combination is carried out, synthesizes high-order temperature compensated curve, the main undulate of shape.
In conclusion the bandgap voltage reference of the present invention does not contain operational amplifier, based on Switch capacitor structure, significantly
Circuit complexity is reduced, high order compensation circuit is simple, eliminates higher order term by resistance relevant with temperature, realizes high-order temperature
Degree compensation, obtains lower temperature coefficient, substantially increases the precision of bandgap voltage reference.
The above, patent preferred embodiment only of the present invention, but the protection domain of patent of the present invention is not limited to
This, any one skilled in the art is in the range disclosed in patent of the present invention, according to the skill of patent of the present invention
Art scheme and its patent of invention design are subject to equivalent substitution or change, belong to the protection domain of patent of the present invention.
Claims (9)
1. a kind of have high-order temperature compensated bandgap voltage reference, it is characterised in that：Including three output switching capacity transformation
Device, switching capacity module one and switching capacity module two, wherein, input voltage VCCIt is connected to the three output switching capacity transformation
The input terminal of device, three output Switching capacitors output terminals export three road bias voltage V respectivelyEB1、VEB2And VEB3, the first via
Bias voltage VEB1It is connected to the first input end of the switching capacity module one, the second road bias voltage VEB2It is connected to described open
Close the second input terminal of capacitance module one and the second input terminal of the switching capacity module two, third road bias voltage VEB3Even
The third input terminal of the switching capacity module two is connected to, the output terminal of the switching capacity module one is connected to the switch electricity
The first input end of molar block two, the output terminal output reference voltage V of the switching capacity module twoREF。
It is 2. according to claim 1 a kind of with high-order temperature compensated bandgap voltage reference, it is characterised in that：It is described
Three output Switching capacitors include three output capacitance boost modules, clamp circuit module one, clamp circuit module two and pincers
Position circuit module three, input voltage VCCIt is connected to the input terminal of the three output capacitances boost module, three output capacitances boosting mould
The first output terminal output V of blockCC1, and it is connected to the input terminal of the clamp circuit module one, the output of clamp circuit module one
Hold output voltage VEB1；The second output terminal output V of the three output capacitances boost moduleCC2, and it is connected to the clamp circuit
The input terminal of module two, the output terminal output voltage V of clamp circuit module twoEB2；The third of the three output capacitances boost module
Output terminal exports VCC3, and the input terminal of the clamp circuit module three is connected to, the output terminal output electricity of clamp circuit module three
Press VEB3。
It is 3. according to claim 2 a kind of with high-order temperature compensated bandgap voltage reference, it is characterised in that：It is described
Three output capacitance boost modules include eight switch S131、S132、S133、S134、S231、S232、S233、S234With three capacitance CC1、
CC2、CC3, wherein, input voltage VCCIt is connected to the switch S131、S132、S134And S233The first connecting pin, switch S131
Two connecting pins are connected to the capacitance CC2The first connecting pin and the switch S231The first connecting pin, the capacitance CC2
Two connecting pins are connected to the switch S233Second connection end, the switch S231Second connection end as three output capacitance liters
First output terminal of die block simultaneously exports VCC1；The switch S132Second connection end is connected to the switch S232First connection
End and the capacitance CC1The first connecting pin, the capacitance CC1Second connection end be connected to the switch S233Second connection
End, the switch S233Second connection end be connected to the capacitance CC3The first connecting pin and the switch S133First connection
End, the switch S232Second connection end as three output capacitance boost modules third output terminal and export VCC3；It is described to open
Close S133Second connection end be connected to ground, the capacitance CC3Second connection end be connected to the switch S134Second connection end
With the switch S234The first connecting pin, the switch S234Second connection end as three output capacitance boost modules second
Output terminal simultaneously exports VCC2。
It is 4. according to claim 2 a kind of with high-order temperature compensated bandgap voltage reference, it is characterised in that：It is described
Clamp circuit module one includes capacitance C31With the first bipolar transistor Q1, the capacitance C31The first connecting pin be connected to described
One bipolar transistor Q1Emitter, the capacitance C31Second connection end ground connection, the first bipolar transistor Q1Base stage
And grounded collector, the first bipolar transistor Q1Output terminal of the emitter as clamp circuit module one, and export electricity
Press VEB1, the clamp circuit module two is identical with the structure and function of clamp circuit module one, and the clamp circuit module two is wrapped
Include capacitance C32With the second bipolar transistor Q2, the capacitance C32The first connecting pin be connected to the second bipolar transistor Q2's
Emitter, the capacitance C32Second connection end ground connection, the second bipolar transistor Q2Base stage and grounded collector, it is described
Second bipolar transistor Q2Output terminal of the emitter as clamp circuit module two, and output voltage VEB2。
It is 5. according to claim 2 a kind of with high-order temperature compensated bandgap voltage reference, it is characterised in that：It is described
Clamp circuit module three includes the resistance R being proportionate with temperatureT, capacitance C33With third bipolar transistor Q3, described and temperature
The resistance R being proportionateTSecond connection end be connected to the third bipolar transistor Q3Emitter and capacitance C33First
Connecting pin, capacitance C33Second connection end ground connection, third bipolar transistor Q3Base stage and grounded collector, third bipolar transistor
Pipe Q3Output terminal of the emitter as clamp circuit module three, and output voltage VEB3。
It is 6. according to claim 1 a kind of with high-order temperature compensated bandgap voltage reference, it is characterised in that：It is described
Switching capacity module one includes switch S14With b same switch capacitor cell, b is arbitrary positive integer, wherein, three output is opened
Close the first output terminal output V of capacitive transducerEB1, and be connected to the first input end of the switching capacity unit and described open
Close S14Second connection end, the switch S14The first connecting pin be connected to the second input terminal of the switching capacity unit；Institute
State the second output terminal output V of three output Switching capacitorsEB2, and it is connected to the third input of the switching capacity unit
End；The b switching capacity unit cascades successively, and the output terminal of b-th of switching capacity unit is as the switching capacity
The output terminal of module one, and output voltage b Δs VEB12+VEB1；The switching capacity module two includes c same switch capacitance list
Member, c is identical with b meanings, wherein, the second output terminal output V of the three output Switching capacitorsEB2, and be connected to described
The first input end of switching capacity unit, the output terminal of the switching capacity module one are connected to the of the switching capacity unit
Two input terminals, the third output terminal output V of the three output Switching capacitorsEB3, and it is connected to the switching capacity unit
Third input terminal, the c switching capacity unit cascades successively, the output terminal of c-th of switching capacity unit be used as described in open
Close the output terminal of capacitance module two, and output reference voltage VREF。
It is 7. according to claim 6 a kind of with high-order temperature compensated bandgap voltage reference, it is characterised in that：It is described
Switching capacity unit includes：Three switch S241、S242、S14With capacitance C41, wherein, the first input of the switching capacity unit
End is connected to the switch S241Second connection end, and as the first output terminal of the switching capacity unit, the switch
S241The first connecting pin connect the capacitance C41The first connecting pin and the switch S14The first connecting pin, the switch S14
Second output terminal of the second connection end as the switching capacity unit, the second input terminal connection of the switching capacity unit
To the capacitance C41Second connection end and the switch S242Second connection end, the switching capacity unit third input
End is connected to the switch S242The first connecting pin, and as the third output terminal of the switching capacity unit.
8. a kind of according to claim 3,6 or 7 has high-order temperature compensated bandgap voltage reference, feature exists
In：The switch S131、S132、S133、S134、S14It must simultaneously close off or open simultaneously；The switch S231、S232、S233、S234、
S241、S242On off state and the switch S131、S132、S133、S134、S14On off state it is opposite.
It is 9. according to claim 1 a kind of with high-order temperature compensated bandgap voltage reference, it is characterised in that：It is described
The output terminal of switching capacity module one and switching capacity module two is required for additionally being connected in parallel with a capacitor, to the switching capacity mould
Block one and the output voltage of switching capacity module two carry out voltage regulation filtering processing.
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| US10061336B1 (en) * | 2017-10-29 | 2018-08-28 | Birad—Research & Development Company Ltd. | Switch capacitor in bandgap voltage reference (BGREF) |
| CN114815947A (en) * | 2021-01-27 | 2022-07-29 | 中国科学院微电子研究所 | Band gap reference circuit |
| CN115268551B (en) * | 2021-04-30 | 2024-04-09 | 炬芯科技股份有限公司 | Reference voltage generating circuit, integrated chip and method |
| CN117492507A (en) * | 2023-10-19 | 2024-02-02 | 华芯科技(恩施)有限公司 | Second-order compensation low-temperature coefficient reference voltage integrated circuit |
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| US5563504A (en) * | 1994-05-09 | 1996-10-08 | Analog Devices, Inc. | Switching bandgap voltage reference |
| US9098104B2 (en) * | 2013-03-07 | 2015-08-04 | Analog Devices Global | Low drop out voltage regulator |
| CN204314764U (en) * | 2014-11-25 | 2015-05-06 | 无锡中星微电子有限公司 | Band gap voltage generative circuit |
| CN104460803B (en) * | 2014-12-01 | 2017-07-18 | 无锡中感微电子股份有限公司 | Bandgap Reference Voltage Generation Circuit |
| CN104796171B (en) * | 2015-03-25 | 2018-09-11 | 广东拓思软件科学园有限公司 | A kind of control circuit applied to SOI CMOS RF switches |
| CN106292816B (en) * | 2015-06-11 | 2018-01-09 | 京微雅格（北京）科技有限公司 | A kind of LDO circuit and its method of supplying power to, fpga chip |
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