CN106899284A - A kind of drain-source voltage after direct measurement MOSFET conductings carries out the circuit of short-circuit protection - Google Patents
A kind of drain-source voltage after direct measurement MOSFET conductings carries out the circuit of short-circuit protection Download PDFInfo
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- CN106899284A CN106899284A CN201510954093.6A CN201510954093A CN106899284A CN 106899284 A CN106899284 A CN 106899284A CN 201510954093 A CN201510954093 A CN 201510954093A CN 106899284 A CN106899284 A CN 106899284A
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- 238000005259 measurement Methods 0.000 title claims abstract description 21
- 230000006641 stabilisation Effects 0.000 abstract description 4
- 238000011105 stabilization Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 230000004044 response Effects 0.000 abstract description 3
- 101100236764 Caenorhabditis elegans mcu-1 gene Proteins 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
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Abstract
The invention belongs to circuit protection field; drain-source voltage after specifically related to a kind of direct measurement MOSFET conductings carries out the circuit of short-circuit protection, including microcontroller and door, driver, MOSFET, differential amplifier circuit, RC wave filters, comparator and monostable circuit；Wherein, MCU is connected driver by with door；The drain electrode of MOSFET is connected with source electrode and differential amplifier circuit；Differential amplifier connects comparator by wave filter；Comparator is connected with monostable circuit；Monostable circuit is connected and door and microcontroller respectively.The effect of the monostable trigger in the present invention is that quick closedown MOSFET drives, and goes to close MOSFET to MCU enough response times.After MCU is responded, by MCU adapter control signals, stabilization is closed MOSFET and drives output, has been reached stabilization, has reliably been closed MOSFET, protects power circuit.
Description
Technical field
The invention belongs to circuit protection field, and in particular to the drain-source voltage after a kind of direct measurement MOSFET conductings carries out the circuit of short-circuit protection.
Background technology
Metal oxide semiconductor field effect tube, i.e. MOSFET are a kind of monopole type voltage controlled elements, and it has switching speed very fast, high input impedance and low driving current, safety operation area is big, and without second breakdown problem, drain current is that negative temperature coefficient has good heat endurance etc..
And the circuit of the short-circuit protection of usual MOSFET, driving chip plus diode to the mode for draining all are utilized in, after MOSFET is opened; if producing excessively stream or short circuit phenomenon; when drain-source both end voltage is higher than diode forward conducting voltage, diode cut-off is closed and drives output.The drawbacks of which is maximum is, because diode forward falloff curve is non-linear and its discreteness, to cause short circuit current protection to have a greater change scope, it is impossible to accurate Cutoff current size, so as to bring uncertainty to short-circuit protection efficiency.
The content of the invention
The purpose of the present invention is the disadvantages mentioned above for overcoming prior art, there is provided the drain-source voltage after a kind of direct measurement MOSFET conductings carries out the circuit of short-circuit protection.
To achieve these goals, the technical solution adopted in the present invention is：A kind of drain-source voltage after direct measurement MOSFET conductings carries out the circuit of short-circuit protection, including MCU（1）With door（2）, drive circuit（3）、MOSFET（5）, differential amplifier circuit（6）, filter circuit（7）, comparator（8）, monostable circuit（9）；Wherein, the MCU（1）By with door（2）Connection drive circuit（3）；The drive circuit connects MOSFET（5）Grid；The MOSFET（5）With differential amplifier circuit（6）It is connected；The differential amplifier circuit（6）By wave filter（7）Connection comparator（8）；The comparator（8）With monostable circuit（4）Connection；The monostable circuit（4）Respectively with MCU（1）And with door（2）Connection.
Drain-source voltage after a kind of above-mentioned direct measurement MOSFET conductings carries out the circuit of short-circuit protection, the microcontroller（1）Holding wire is connected and door（2）, holding wire MCU（1）Closing control signal.
Drain-source voltage after a kind of above-mentioned direct measurement MOSFET conductings carries out the circuit of short-circuit protection, the MOSFET（5）Drain electrode the positive pole of differential amplifier U1 is connected by resistance R1；The MOSFET（5）Source electrode the negative pole of differential amplifier U1 is connected by resistance R3.
Drain-source voltage after a kind of above-mentioned direct measurement MOSFET conductings carries out the circuit of short-circuit protection; the differential amplifier U1 is high pressure differential amplifier; the two ends of resistance R2 are respectively connecting to the positive and negative electrode of differential amplifier U1, the voltage on resistance R2 as differential amplifier U1 input.
Drain-source voltage after a kind of above-mentioned direct measurement MOSFET conductings carries out the circuit of short-circuit protection, the wave filter（7）It is RC wave filters, the noise on power circuit is filtered.
Drain-source voltage after a kind of above-mentioned direct measurement MOSFET conductings carries out the circuit of short-circuit protection, the comparator（8）Positive pole connection wave filter, negative pole is VREF, comparator（8）Output connection monostable circuit（4）.
Drain-source voltage after a kind of above-mentioned direct measurement MOSFET conductings carries out the circuit of short-circuit protection, the monostable circuit（4）It is respectively connecting to microcontroller（1）And with door（2）.
Beneficial effects of the present invention：The present invention because consider in the circuit of the short-circuit protection of usual MOSFET MCU cannot quick response coherent signal, so employ monostable circuit, the effect of monostable trigger therein is quick closedown MOSFET drivings, to the response time that MCU is enough.After MCU is responded; by MCU adapter control signals; stabilization is closed MOSFET and drives output; reach stabilization, reliably close MOSFET; protection power circuit; meanwhile, the present invention substantially increases the accuracy of detection drain-source voltage value when MOSFET is turned on due to drain-source voltage when directly collection MOSFET is turned on.
Brief description of the drawings
The present invention is specifically described below by accompanying drawing and in conjunction with the embodiments, advantages of the present invention and implementation will be more obvious, and wherein content is only used for explanation of the present invention shown in accompanying drawing, without constituting to the limitation gone up in all senses of the invention.
Fig. 1 is the structural representation of the circuit that drain-source voltage after a kind of direct measurement MOSFET conducting of the invention carries out short-circuit protection；
Description of reference numerals：1st, microcontroller；2 and door；3rd, drive circuit；4th, monostable circuit；5、MOSFET；6th, differential circuit；7th, filter circuit；8th, comparator.
Specific embodiment
Embodiments of the invention are elaborated below：The present embodiment is implemented under premised on technical solution of the present invention, gives detailed implementation method and specific operating process.It should be pointed out that to those skilled in the art, without departing from the inventive concept of the premise, can also make some variations and modifications, these belong to the scope of the present invention.
As shown in figure 1, the drain-source voltage after a kind of direct measurement MOSFET conductings carries out the circuit of short-circuit protection, including 1, microcontroller；2 and door；3rd, drive circuit；4th, monostable circuit；5、MOSFET；6th, differential circuit；7th, filter circuit；8th, comparator；
Wherein, the microcontroller 1 is connected drive circuit 3 by with door 2；The drive circuit 3 connects the grid of MOSFET 5；The drain electrode of the MOSFET 5 and source electrode are connected with differential amplifier circuit 6；The differential electric discharge road 6 connects comparator 8 by filter circuit 7；The comparator 7 is connected with monostable circuit 4；The monostable circuit 4 is connected and door 2 and MCU1.
Further, MOSFET5 signals are closed in the connections of the MCU 1 and door 2, MCU transmission.
Further, the drain electrode of the MOSFET 5 connects the positive pole of differential amplifier U1 by resistance R1；The source electrode of the MOSFET 5 connects the negative pole of differential amplifier 5 by resistance R3.
Further, the differential amplifier U1 is high pressure differential amplifier, and its positive pole is connected by resistance R2 respectively with negative pole.
Further, the wave filter 6 is RC wave filters.
Further, the positive pole connection wave filter of the comparator 7, negative pole is VREF, the output connection monostable circuit of comparator.
Further, the output of the monostable circuit is respectively connecting to and door 2 and MCU1.
Operation principle of the invention：
After MOSFET conductings; the electric current for flowing through MOSFET is detected by high pressure differential amplifier circuit; output after the detection of high pressure differential amplifier, enters comparator, when the short circuit current or excessively stream of MOSFET afterwards after filtering; the signal of differential amplifier output is after filtering afterwards higher than the reference voltage VREF of comparator; trigger comparator, the output of comparator triggers monostable circuit again, and monostable circuit output signal is respectively fed to and door and MCU; MOSFET quickly is closed, the effect of protection power circuit is reached.
The above is preferred exemplary applications of the invention, not limitation of the present invention, and every simple modification made according to technical key point, structure change change are belonged within protection scope of the present invention.
Claims (7)
1. the drain-source voltage after a kind of direct measurement MOSFET conductings carries out the circuit of short-circuit protection, it is characterised in that：Including microcontroller（1）With door（2）, drive circuit（3）, monostable circuit（4）、MOSFET（5）, differential amplifier circuit（6）, wave filter（7）, comparator（8）；
Wherein, the microcontroller（1）By with door（2）Connection drive circuit（3）；The drive circuit（3）Connection MOSFET（5）Grid；The MOSFET（5）With differential amplifier circuit（6）It is connected；The differential amplifier circuit（6）By wave filter（7）Connection comparator（8）；The comparator（8）With monostable circuit（4）Connection；The monostable circuit（4）Connect respectively and door（2）And microcontroller（1）.
2. the drain-source voltage after a kind of direct measurement MOSFET conductings according to claim 1 carries out the circuit of short-circuit protection, it is characterised in that：The MCU（1）Connection and door（2）, MCU（1）Signal for close MOSFET（5）Control signal.
3. the drain-source voltage after a kind of direct measurement MOSFET conductings according to claim 1 carries out the circuit of short-circuit protection, it is characterised in that：The MOSFET（5）Drain electrode the positive pole of differential amplifier U1 is connected by resistance R1；The MOSFET（5）Source electrode by resistance R3 connect differential amplifier（5）Negative pole.
4. the drain-source voltage after a kind of direct measurement MOSFET conductings according to claim 1 carries out the circuit of short-circuit protection, it is characterised in that：U1 is high pressure differential amplifier in the differential amplifier circuit, and its positive pole is connected with negative pole by resistance R2, and the control source differential amplifier on R2, the output of differential amplifier is MOSFET（5）Drain-source voltage value during conducting.
5. the drain-source voltage after a kind of direct measurement MOSFET conductings according to claim 1 carries out the circuit of short-circuit protection, it is characterised in that：The output of the differential amplifier is connected to wave filter（7）.
6. the drain-source voltage after a kind of direct measurement MOSFET conductings according to claim 1 carries out the circuit of short-circuit protection, it is characterised in that：The wave filter（7）It is connected to comparator（8）, comparator（8）Positive pole connection wave filter, negative pole is VREF, comparator output connection monostable circuit（4）.
7. the drain-source voltage after a kind of direct measurement MOSFET conductings according to claim 1 carries out the circuit of short-circuit protection, it is characterised in that：Monostable circuit（4）Output connect respectively in door（2）And microcontroller（1）.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510954093.6A CN106899284A (en) | 2015-12-20 | 2015-12-20 | A kind of drain-source voltage after direct measurement MOSFET conductings carries out the circuit of short-circuit protection |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510954093.6A CN106899284A (en) | 2015-12-20 | 2015-12-20 | A kind of drain-source voltage after direct measurement MOSFET conductings carries out the circuit of short-circuit protection |
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| CN106899284A true CN106899284A (en) | 2017-06-27 |
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| CN201510954093.6A Pending CN106899284A (en) | 2015-12-20 | 2015-12-20 | A kind of drain-source voltage after direct measurement MOSFET conductings carries out the circuit of short-circuit protection |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114594356A (en) * | 2020-12-03 | 2022-06-07 | 圣邦微电子（北京）股份有限公司 | Drain-source voltage detection circuit and switching circuit of power tube |
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|---|---|---|---|---|
| CN1139836A (en) * | 1995-06-06 | 1997-01-08 | 约克国际公司 | Switch driving circuit |
| CN2728101Y (en) * | 2004-09-21 | 2005-09-21 | 深圳市珊星电脑有限公司 | Short circuit protection circuit based on P channel MOSFET |
| CN101615899A (en) * | 2009-07-16 | 2009-12-30 | 福州大学 | The non-linear impulse-width modulation control device of monophase current source grid-connected inverter |
| US20100271737A1 (en) * | 2007-10-02 | 2010-10-28 | Thales | Protection Circuit for MOSFET |
| CN101944715A (en) * | 2010-08-31 | 2011-01-12 | 深圳拓邦股份有限公司 | Load short-circuit protection circuit |
| CN102197348A (en) * | 2008-10-27 | 2011-09-21 | 莫斯科技株式会社 | Ac voltage control device |
| CN203387165U (en) * | 2013-08-05 | 2014-01-08 | 合肥大明节能科技有限公司 | High-speed half-bridge MOSFET short circuit protection circuit |
-
2015
- 2015-12-20 CN CN201510954093.6A patent/CN106899284A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1139836A (en) * | 1995-06-06 | 1997-01-08 | 约克国际公司 | Switch driving circuit |
| CN2728101Y (en) * | 2004-09-21 | 2005-09-21 | 深圳市珊星电脑有限公司 | Short circuit protection circuit based on P channel MOSFET |
| US20100271737A1 (en) * | 2007-10-02 | 2010-10-28 | Thales | Protection Circuit for MOSFET |
| CN102197348A (en) * | 2008-10-27 | 2011-09-21 | 莫斯科技株式会社 | Ac voltage control device |
| CN101615899A (en) * | 2009-07-16 | 2009-12-30 | 福州大学 | The non-linear impulse-width modulation control device of monophase current source grid-connected inverter |
| CN101944715A (en) * | 2010-08-31 | 2011-01-12 | 深圳拓邦股份有限公司 | Load short-circuit protection circuit |
| CN203387165U (en) * | 2013-08-05 | 2014-01-08 | 合肥大明节能科技有限公司 | High-speed half-bridge MOSFET short circuit protection circuit |
Non-Patent Citations (2)
| Title |
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| HATICE GÜL SEZGIN: "Characterization and modeling of power MOSFET switching times variations under constant electrical stress" * |
| 杨冬平;王莉;江登宇;: "降栅压技术在MOSFET驱动中的应用" * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114594356A (en) * | 2020-12-03 | 2022-06-07 | 圣邦微电子（北京）股份有限公司 | Drain-source voltage detection circuit and switching circuit of power tube |
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Application publication date: 20170627 |