CN106898620B - Array substrate and its manufacturing method, display panel and display device - Google Patents
Array substrate and its manufacturing method, display panel and display device Download PDFInfo
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- CN106898620B CN106898620B CN201710198673.6A CN201710198673A CN106898620B CN 106898620 B CN106898620 B CN 106898620B CN 201710198673 A CN201710198673 A CN 201710198673A CN 106898620 B CN106898620 B CN 106898620B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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Abstract
The present invention provides a kind of array substrate, including common electrode layer and the first insulating layer set gradually, data line layer, second insulating layer and connection electrode layer, the common electrode layer includes multiple public electrodes, wherein, the array substrate further includes barrier metal block, the barrier metal block is located at below the reparation connection electrode, and the reparation connection electrode is separated with corresponding public electrode.The present invention also provides a kind of manufacturing method of array substrate, the display panel including the array substrate and the display devices including the display panel.Display device including array substrate provided by the present invention can obtain good display effect.
Description
Technical field
The present invention relates to field of display devices, and in particular, to a kind of array substrate, the manufacturing method of the array substrate,
Display panel including the array substrate and the display device including the display panel.
Background technique
When manufacturing array substrate, need to examine the signal wire in array substrate whether qualified, such as newly formed signal wire
It is unqualified, then it needs to repair the signal wire for generating defect, then carries out down one of production process again.
For example, needing to repair data line after foring data line.Then it is further continued for forming data line top
Each graph layer.
In existing restorative procedure, repair member, one end and the notch side of repair member are formed in the side of data line
Data line electrical connection, the other end of repair member are electrically connected with the data line of the notch other side.When array substrate is used for display device
When middle, repair member can transmit data-signal.
But the display effect of the array substrate by reparation will receive influence.Therefore, how to avoid repairing array substrate
It is that display effect impacts the technical problem urgently to be resolved as this field.
Summary of the invention
The purpose of the present invention is to provide a kind of array substrate, the manufacturing method of the array substrate and including the array substrate
Display panel.In array substrate made from manufacturing method using the array substrate, the number for generating defect can be both repaired
According to line, and the normal display of display panel is not interfered with.
To achieve the goals above, as one aspect of the present invention, array substrate is provided, the array substrate includes public affairs
Common electrode layer and the first insulating layer set gradually, data line layer, second insulating layer and connection electrode layer, the public electrode
Layer includes multiple public electrodes, and the connection electrode layer includes multiple connection electrodes, and each connection electrode corresponding at least two is public
Common electrode, the data line include primary data line and repair data line, and the repair data line includes data line ontology and repairs
Copy forms jagged, side and the data line of the one end of the repair member in the notch on the data line ontology
Ontology electrical connection, the other end of the repair member are electrically connected in the other side of the notch with the data line ontology, the company
Receiving electrode include initial connection electrode and repair connection electrode, it is described repair connection electrode the data line layer orthographic projection with
The repair data line is adjacent, and the initial connection electrode passes through through the of first insulating layer and the second insulating layer
One via hole is electrically connected with corresponding public electrode, wherein the array substrate further includes barrier metal block, the barrier metal block
Below the reparation connection electrode, the reparation connection electrode is separated with corresponding public electrode.
Preferably, the array substrate includes the public electrode wire layer being arranged in above the common electrode layer, the public affairs
Common-battery polar curve layer includes a plurality of public electrode wire, and multiple public electrodes are provided on every public electrode wire, described public
Electrode wires include public electrode wire ontology and from the public electrode wire ontology it is convex towards the side of the public electrode wire ontology
Link block out, the reparation connection electrode include connection electrode ontology and from the connection electrode ontology towards described public
The contact portion of electrode wires protrusion, the position of the contact portion is corresponding with the position of the link block, and the barrier metal block covers
Cover corresponding link block, the contact site in the second via hole of second insulating layer, and with the barrier metal block electricity
Connection.
Preferably, the barrier metal block and repair member same layer setting.
The material for being preferably made from the repair member and the barrier metal block includes copper.
As the second aspect of the invention, a kind of manufacturing method of array substrate is provided, wherein the manufacturing method packet
It includes:
Common electrode layer is formed, the common electrode layer includes public electrode；
Form the first insulating layer for covering the common electrode layer；
Layer is formed data line, the data line layer includes multiple data lines；
Judge on the data line with the presence or absence of notch；
When, there are when notch, formation repair member, one end of the repair member is in the side of the notch on the data line
It is electrically connected with the data line, the other end is electrically connected in the other side of the notch with the data line；
Barrier metal block is formed, the barrier metal block is adjacent with the repair member；
Form the second insulating layer for covering the data line layer；
Multiple via holes are formed, the via hole includes running through the first of first insulating layer and the second insulating layer simultaneously
Via hole and the second via hole through the second insulating layer, the bottom of first via hole be the public electrode or with the public affairs
The conductive pattern of common electrode electrical connection, the bottom of second via hole are the barrier metal block；
Connection electrode layer is formed, the connection electrode layer includes multiple connection electrodes, each connection electrode corresponding at least two
A public electrode, the connection electrode include initial connection electrode and repair connection electrode, and the initial connection electrode passes through institute
It states the first via hole to be electrically connected with corresponding public electrode, the reparation connection electrode passes through second via hole and blocking gold
Belong to block electrical connection.
Preferably, the bottom of first via hole is the conductive pattern being electrically connected with the public electrode, and described public
The conductive pattern of electrode electrical connection includes public electrode wire, and the manufacturing method further includes covering in formation common electrode layer and formation
It covers and is carried out between the first insulating layer of the common electrode layer: forming public electrode wire layer, the public electrode wire layer includes
A plurality of public electrode wire, multiple public electrodes are arranged on every public electrode wire, and the public electrode wire includes public affairs
Common-battery polar curve ontology and the link block protruded from the public electrode wire ontology towards the side of the public electrode wire ontology, institute
State the contact that connection electrode includes connection electrode ontology with protrudes from the connection electrode ontology towards the public electrode wire
Portion, the position of the contact portion is corresponding with the position of the link block, and the barrier metal block covers corresponding link block.
Preferably, the repair member and the barrier metal block are formed in same step.
The material for being preferably made from the repair member and the barrier metal block includes copper.
As the third aspect of the invention, a kind of display panel is provided, the display panel includes array substrate,
In, the display panel includes above-mentioned array substrate provided by the present invention.
As the fourth aspect of the invention, a kind of display device is provided, the display device includes display panel,
In, the display panel is above-mentioned display panel provided by the present invention.
When forming the repair member of repair data line, it is formed simultaneously barrier metal block.The barrier metal block is covered with public affairs
Part corresponding with corresponding connection electrode in common electrode.Subsequently form the second insulating layer of covering data line layer, and dry etching shape
At via hole.Since the plasma used when dry etching is smaller to the corrasion of metal, barrier metal block has centainly in addition
Thickness (thickness of the barrier metal block and the thickness of repair member are identical), therefore, plasma can not cut through barrier metal block.Cause
This, the reparation connection electrode above the barrier metal block will not be connect with the public electrode of lower section, so that common electrical will not be caused
It is short-circuit between pole and repair data line.
It follows that the display device including array substrate provided by the present invention can obtain good display effect.
Detailed description of the invention
The drawings are intended to provide a further understanding of the invention, and constitutes part of specification, with following tool
Body embodiment is used to explain the present invention together, but is not construed as limiting the invention.In the accompanying drawings:
Fig. 1 is the schematic diagram for the part in existing array substrate, being repaired；
Fig. 2 is the schematic diagram of a part of array substrate provided by the present invention；
Fig. 3 is the A-A cross-sectional view of Fig. 2；
Fig. 4 is the flow chart of manufacturing method provided by the present invention.
Description of symbols
110: public electrode wire 111: public electrode wire ontology
112: link block 210: repair member
220: data line 230: barrier metal block
310: repairing connection electrode 310a: contact portion
400: 500: the first insulating layer of public electrode
600: second insulating layer
Specific embodiment
Below in conjunction with attached drawing, detailed description of the preferred embodiments.It should be understood that this place is retouched
The specific embodiment stated is merely to illustrate and explain the present invention, and is not intended to restrict the invention.
Array substrate includes the multiple and different graph layers to be formed on the transparent substrate.For example, array substrate may include
Common electrode layer, the first insulating layer 500, the data line layer, second insulating layer 600, pixel electrode layer set gradually.Wherein, public
Common electrode layer includes multiple independent public electrodes 400, and pixel electrode layer includes multiple independent pixel electrodes and multiple connections
Part.It is found through the present inventor's analysis, in the prior art, when repair data line, is directly formed and repaired at the flaws of data line
Copy, the metal material for forming repair member are spread, as shown in fig. 1, around data line 220 in bigger range all
In the presence of diffusion metal layer 230a.Connector is used to different public electrodes 400 being electrically connected networking.It is easily understood that connection
Part is to be electrically connected by the via hole through two insulating layers with public electrode 400.Due to forming the metal material hair of repair member
Diffusion has been given birth to, as shown in Figure 1, the transparent electrode material in via hole will be electrically connected with the metal layer that repair member diffuses to form, so that
Short circuit is formd between data line and public electrode, and then affects display effect.
In order to avoid causing to form short circuit between data line and public electrode in repair data line, the present invention provides one kind
Array substrate, as shown in figure 3, the array substrate includes common electrode layer and the first insulating layer, the data line that set gradually
Layer, second insulating layer and connection electrode layer, the common electrode layer include multiple public electrodes 400, the connection electrode layer packet
Include multiple connection electrodes, corresponding at least two public electrodes 400 of each connection electrode.The data line includes primary data line
(not shown) and repair data line, repair data line include data line ontology 220 and repair member 210, shape on data line ontology 220
At jagged (that is, part in region I in Fig. 2).As shown in Fig. 2, one end of repair member 210 the notch side with
Data line ontology 220 is electrically connected, and the other end of repair member 210 is electrically connected in the other side of the notch with data line ontology 220.
The connection electrode includes initial connection electrode and repairs connection electrode 310, and the reparation connection electrode is in the data line layer
Orthographic projection it is adjacent with the repair data line.The initial connection electrode is by running through first insulating layer and described second
Second via hole of insulating layer is electrically connected with corresponding public electrode.Wherein, the array substrate further includes barrier metal block 230,
The barrier metal block 230 is located at reparations connection electrode lower section, will repair connection electrode 310 and corresponding public electrode every
It opens.Even if producing diffusion metal 230a, diffusion metal 230a will not be between the insulation between public electrode and data line
Every impacting.
When forming the repair member 210 of repair data line, it is formed simultaneously barrier metal block 230.The barrier metal block covers
Part corresponding with corresponding connection electrode is covered on public electrode.The second insulating layer 600 of covering data line layer is subsequently formed,
And dry etching forms via hole.Since the plasma used when dry etching is smaller to the corrasion of metal, barrier metal block has in addition
There is certain thickness (thickness of the barrier metal block and the thickness of repair member are identical), therefore, plasma can not cut through blocking gold
Belong to block 230.Therefore, the reparation connection electrode 310 of 230 top of barrier metal block will not be connect with the public electrode 400 of lower section,
It is short-circuit between public electrode 400 and repair data line 200 to cause.
It follows that the display device including array substrate provided by the present invention can obtain good display effect.
It is easily understood that although the reparation connector near repair member 210 can not be electrically connected with corresponding public electrode,
But there are many quantity of an array substrate upper connector, remove except the connector that can not be electrically connected with public electrode, it is multiple
Public electrode connects networking by other connectors, still is able to equably transmit common signal, obtains preferable display
Effect.
When the display panel for including the array substrate is shown, public affairs are provided to public electrode by public electrode wire
Common voltage signal, correspondingly, the array substrate may include that (top herein refers to above the common electrode layer for setting
Top in Fig. 3) public electrode wire layer.As shown in Fig. 2, the public electrode wire layer includes a plurality of public electrode wire 110, it should
Public electrode wire 110 include public electrode wire ontology 111 and from the public electrode wire ontology 111 towards the public electrode wire sheet
The link block 112 of the side protrusion of body 111.Repairing connection electrode includes connection electrode ontology 310 and from the connection electrode ontology
The contact portion 310a protruded on 310 towards public electrode wire, the position of contact portion 310a is corresponding with the position of the link block,
The barrier metal block covers corresponding link block.As shown in figure 3, contact portion 310a is located at the through second insulating layer 600
In two via holes, and contact portion 310a is electrically connected with barrier metal block 230.
The purpose that link block is arranged was originally, biggish first via hole in aperture can be set, to reduce initial connection
Contact resistance between electrode and public electrode wire.In the present invention, without to each of each mask plate for forming array substrate
A figure is modified, and therefore, the position of the second via hole is identical with the position for not having the first via hole in defective array substrate
's.
In the present invention, formation barrier metal block 230 and the sequencing of repair member 210 are not particularly limited,
In order to save the process, it is preferable that barrier metal block 230 and the setting of 210 same layer of repair member.That is, the shape in same step patterning processes
At barrier metal block 230 and repair member 210.It follows that the material of the material of barrier metal block 230 and repair member 210 is phase
With.
In general, data line includes the Mo layer, copper metal layer and Mo layer being stacked, wherein for dry etching
Plasma hardly causes any impact to copper metal, therefore, the material of repair member 210 and barrier metal block 230 is made
Material includes copper.When dry etching forms via hole, the second via hole of 230 top of barrier metal block does not pass through barrier metal block, from
It and can guarantee that short circuit will not be generated between public electrode 400 and repair data line 200.
It is easily understood that the public electrode wire layer further includes a plurality of grid line, the connection electrode layer further includes multiple
Pixel electrode.
As another aspect of the present invention, a kind of manufacturing method of array substrate is provided, wherein as shown in figure 4, described
Manufacturing method includes:
S100, common electrode layer is formed, the common electrode layer includes public electrode；
S200, the first insulating layer for covering the common electrode layer is formed；
S300, layer is formed data line, the data line layer includes multiple data lines；
S400, judge on the data line with the presence or absence of notch；
S500, when there are when notch, forming repair member, one end of the repair member is in the notch on the data line
Side is electrically connected with the data line, and the other end is electrically connected in the other side of the notch with the data line；
S600, barrier metal block is formed, the barrier metal block is adjacent with the repair member；
S700, the second insulating layer for covering the data line layer is formed；
S800, multiple via holes are formed, multiple via holes include while running through first insulating layer and described second absolutely
First via hole of edge layer and the second via hole through the second insulating layer, the bottom of first via hole are the public electrode
Or the conductive pattern being electrically connected with the public electrode, the bottom of second via hole are the barrier metal block；
S900, connection electrode layer is formed, the connection electrode layer includes multiple connection electrodes, and each connection electrode is corresponding extremely
Few two public electrodes, the connection electrode include initial connection electrode and repair connection electrode, and the initial connection electrode is logical
The via hole crossed through first insulating layer and the second insulating layer is electrically connected with corresponding public electrode, the reparation connection
Electrode is electrically connected with the barrier metal block.
The barrier metal block is located at below the reparation connection electrode, will repair connection electrode and corresponding common electrical
Pole separates.Even if producing diffusion metal, diffusion metal 230a will not be between the insulation between public electrode and data line
Every impacting.
The barrier metal block is covered on public electrode part corresponding with corresponding connection electrode.Subsequently form covering
The second insulating layer of data line layer, and dry etching forms via hole.Corrasion due to the plasma used when dry etching to metal
Smaller, barrier metal block has certain thickness (thickness of the barrier metal block and the thickness of repair member are identical) in addition, therefore,
Plasma can not cut through barrier metal block.Therefore, the reparation connection electrode above the barrier metal block will not be public with lower section
Electrode connection, to will not cause short-circuit between public electrode and repair data line.
As mentioned above it is possible, the array substrate may include providing the public electrode wire of common voltage to public electrode,
That is, the conductive pattern being electrically connected with the public electrode includes public electrode wire, correspondingly, the manufacturing method can also include
It is carried out between step S100 and step S200: forming public electrode wire layer.The public electrode wire includes public electrode wire
Ontology and the link block protruded from the public electrode wire ontology towards the side of the public electrode wire ontology, the connection electricity
Pole include connection electrode ontology and from the connection electrode ontology towards the public electrode wire protrude contact portion, it is described to connect
The position of contact portion is corresponding with the position of the link block, and the barrier metal block covers corresponding link block.It is readily comprehensible
It is that in this step, the first insulating layer covers public electrode wire layer while covering common electrode layer.
In order to simplify technique, reduce cost, it is preferable that form the repair member and the barrier metal in same step
Block.It is carried out that is, step S600 is synchronous with step S500.
As mentioned above it is possible, metallic copper is by minimum a possibility that plasma etching, it is therefore preferred that described repair is made
The material of copy and the barrier metal block includes copper.
As a kind of specific embodiment, the public electrode wire layer further includes a plurality of grid line, the connection electrode layer
It further include multiple pixel electrodes.
As the third aspect of the invention, a kind of display panel is provided, the display panel includes array substrate,
In, the display panel includes above-mentioned array substrate provided by the present invention.
As the fourth aspect of the invention, a kind of display device is provided, the display device includes display panel, described
Display panel is above-mentioned display panel provided by the present invention.
Since short circuit will not occur between the repair data and public electrode after repairing, it is provided by the present invention aobvious
Showing device has preferable display effect.
The display device can be mobile phone, tablet computer, laptop, desktop computer, GPS, TV etc..
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of array substrate, the array substrate includes common electrode layer and the first insulating layer, the data line that set gradually
Layer, second insulating layer and connection electrode layer, the common electrode layer include multiple public electrodes, and the connection electrode layer includes more
A connection electrode, corresponding at least two public electrodes of each connection electrode, the data line include primary data line and reparation number
According to line, the repair data line includes data line ontology and repair member, and jagged, the reparation is formed on the data line ontology
One end of part is electrically connected in the side of the notch with the data line ontology, and the other end of the repair member is in the notch
The other side is electrically connected with the data line ontology, and the connection electrode includes initial connection electrode and repairs connection electrode, described
It is adjacent with the repair data line in the orthographic projection of the data line layer to repair connection electrode, the initial connection electrode is by passing through
The first via hole for wearing first insulating layer and the second insulating layer is electrically connected with corresponding public electrode, which is characterized in that
The array substrate further includes barrier metal block, and the barrier metal block is located at below the reparation connection electrode, will be described
Connection electrode is repaired to separate with corresponding public electrode.
2. array substrate according to claim 1, which is characterized in that the array substrate includes being arranged in the common electrical
The public electrode wire layer of pole layer top, the public electrode wire layer includes a plurality of public electrode wire, is set on every public electrode wire
It is equipped with multiple public electrodes, the public electrode wire includes public electrode wire ontology and from the public electrode wire ontology
The link block protruded towards the side of the public electrode wire ontology, the reparation connection electrode include connection electrode ontology and from institute
State the contact portion protruded on connection electrode ontology towards the public electrode wire, the position of the contact portion and the link block
Position is corresponding, and the barrier metal block covers corresponding link block, and the contact site is in through the second of second insulating layer
In via hole, and it is electrically connected with the barrier metal block.
3. array substrate according to claim 1 or 2, which is characterized in that the barrier metal block and the repair member are same
Layer setting.
4. array substrate according to claim 3, which is characterized in that the repair member and the barrier metal block is made
Material includes copper.
5. a kind of manufacturing method of array substrate, which is characterized in that the manufacturing method includes:
Common electrode layer is formed, the common electrode layer includes public electrode；
Form the first insulating layer for covering the common electrode layer；
Layer is formed data line, the data line layer includes multiple data lines；
Judge on the data line with the presence or absence of notch；
When there are when notch, forming repair member, side and institute of the one end of the repair member in the notch on the data line
Data line electrical connection is stated, the other end is electrically connected in the other side of the notch with the data line；
Barrier metal block is formed, the barrier metal block is adjacent with the repair member；
Form the second insulating layer for covering the data line layer；
Multiple via holes are formed, multiple via holes include running through the first of first insulating layer and the second insulating layer simultaneously
Via hole and the second via hole through the second insulating layer, the bottom of first via hole be the public electrode or with the public affairs
The conductive pattern of common electrode electrical connection, the bottom of second via hole are the barrier metal block；
Connection electrode layer is formed, the connection electrode layer includes multiple connection electrodes, and each connection electrode corresponding at least two is public
Common electrode, the connection electrode include initial connection electrode and repair connection electrode, and the initial connection electrode passes through described the
One via hole is electrically connected with corresponding public electrode, and the reparation connection electrode passes through second via hole and the barrier metal block
Electrical connection.
6. manufacturing method according to claim 5, which is characterized in that the bottom of first via hole is and the common electrical
The conductive pattern of pole electrical connection, the conductive pattern being electrically connected with the public electrode includes public electrode wire, the manufacturing method
Further include being carried out between the first insulating layer that formation common electrode layer and formation cover the common electrode layer: being formed public
Electrode wires layer, the public electrode wire layer include a plurality of public electrode wire, are arranged on every public electrode wire multiple described
Public electrode, the public electrode wire include public electrode wire ontology and from the public electrode wire ontology towards the common electrical
The link block of the side protrusion of polar curve ontology, the connection electrode includes connection electrode ontology and from the connection electrode ontology
The contact portion protruded towards the public electrode wire, the position of the contact portion is corresponding with the position of the link block, described
Barrier metal block covers corresponding link block.
7. manufacturing method according to claim 5 or 6, which is characterized in that formed in same step the repair member and
The barrier metal block.
8. manufacturing method according to claim 5 or 6, which is characterized in that the repair member and the barrier metal is made
The material of block includes copper.
9. a kind of display panel, the display panel includes array substrate, which is characterized in that the array substrate is claim
Array substrate described in any one of 1 to 4.
10. a kind of display device, the display device includes display panel, which is characterized in that the display panel is wanted for right
Display panel described in asking 9.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710198673.6A CN106898620B (en) | 2017-03-29 | 2017-03-29 | Array substrate and its manufacturing method, display panel and display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710198673.6A CN106898620B (en) | 2017-03-29 | 2017-03-29 | Array substrate and its manufacturing method, display panel and display device |
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| CN106898620A CN106898620A (en) | 2017-06-27 |
| CN106898620B true CN106898620B (en) | 2019-08-16 |
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| CN105549281A (en) * | 2016-03-16 | 2016-05-04 | 京东方科技集团股份有限公司 | Array substrate, repairing method, display panel and display device |
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| KR100796749B1 (en) * | 2001-05-16 | 2008-01-22 | 삼성전자주식회사 | A thin film transistor array substrate for a liquid crystal display |
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| CN105549281A (en) * | 2016-03-16 | 2016-05-04 | 京东方科技集团股份有限公司 | Array substrate, repairing method, display panel and display device |
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