CN106898618B - 一种固态光源的制备方法和固态光源 - Google Patents

一种固态光源的制备方法和固态光源 Download PDF

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CN106898618B
CN106898618B CN201710183218.9A CN201710183218A CN106898618B CN 106898618 B CN106898618 B CN 106898618B CN 201710183218 A CN201710183218 A CN 201710183218A CN 106898618 B CN106898618 B CN 106898618B
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gallium nitride
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type electrode
light source
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CN106898618A (zh
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李海旭
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BOE Technology Group Co Ltd
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Abstract

本发明提供了一种固态光源的制备方法和固态光源。所述显示面板的基板包括正反两面，在基板正面设置有薄膜晶体管，在基板反面直接制作的固态光源。通过本发明实施例提供的显示面板，基板正面设置有薄膜晶体管，基板反面直接制作固态光源，无需进行背光源和阵列基板的贴合，显示面板更轻薄。并且显示面板背面的固态光源不含有汞介质，显示面板更环保。

Description

一种固态光源的制备方法和固态光源
技术领域
本发明涉及TFT-LCD技术领域，特别是涉及一种固态光源的制备方法和固态光源。
背景技术
随着显示产业不断发展，对于TFT(Thin Film Transistor，薄膜晶体管)-LCD(Liquid Crystal Display，液晶显示器)的显示品质以及显示效果的要求不断提高。现有背光源需要导光板及光源等复杂结构，占用显示面板空间，并且背光源为单独模块，需要与TFT基板工序贴合，导致显示面板厚度增加；常用的日光灯光源中含有汞介质，受热会挥发易造成汞蒸气污染。
发明内容
鉴于上述问题，提出了本发明实施例以便提供一种克服上述问题或者至少部分地解决上述问题固态光源的制备方法和固态光源。
为了解决上述问题，本发明公开了一种显示面板，所述显示面板的基板包括正反两面，在基板正面设置有薄膜晶体管，在基板反面直接制作的固态光源。
为了解决上述问题，本发明还公开了一种固态光源的制备方法，所述方法包括：
在基板表面沉积氮化镓形成氮化镓缓冲层；
在所述氮化镓缓冲层上沉积合金，通过构图工艺制备固定线宽的电极，形成N型电极层；
在所述N型电极层上沉积N型氮化镓形成N型氮化镓层；
在所述N型氮化镓层上沉积铟氮化镓形成量子阱层；
对所述量子阱层的不同区域掺杂不同的杂质；
在所述量子阱层上沉积P型氮化镓形成P型氮化镓层；
将所述N型氮化镓层、量子阱层、P型氮化镓层通过构图工艺形成与N型电极同宽的基色芯片；
在所述P型氮化镓层上沉积合金，通过构图工艺制备与N型电极同宽的电极，形成P型电极层；
使用填充介质填充相邻的两个基色芯片之间的间隙并覆盖P型电极层；
在填充介质上沉积发光反射层。
可选地，所述对所述量子阱层的不同区域掺杂不同的杂质包括：
对G基色芯片区域掺杂磷、砷中任一种杂质；
对B基色芯片区域掺杂硅、碳或铝中任一种杂质。
可选地，所述对G基色芯片区域掺杂磷、砷中任一种杂质包括：
采用光刻胶遮盖所述G基色芯片区域之外的铟氮化镓；
对裸露的铟氮化镓掺杂磷、砷中任一种杂质；
去除光刻胶。
可选地，R基色芯片区域为无掺杂的本征发光区域。
可选地，所述将所述N型氮化镓层、量子阱层、P型氮化镓层通过构图工艺形成与N型电极同宽的基色芯片包括：
采用干法刻蚀工艺刻蚀P型氮化镓、铟氮化镓、N型氮化镓，其中刻蚀后的P型氮化镓、铟氮化镓、N型氮化镓均与N型电极同宽。
可选地，所述通过构图工艺制备与N型电极同宽的电极，形成P型电极层包括：
采用湿法刻蚀工艺刻蚀合金形成P型电极，其中刻蚀后的P型电极与N型电极同宽。
可选地，在所述在基板表面沉积氮化镓形成氮化镓缓冲层之前，所述方法还包括：
翻转基板，用于将所述固态光源制备在基板反面。
为了解决上述问题，本发明还公开了一种固态光源，包括：N型电极层、N型氮化镓层、量子阱层、P型氮化镓层、P型电极层；
其中，所述N型电极层、N型氮化镓层、量子阱层、P型氮化镓层、P型电极层从基板表面向上依次叠加，并具有相同的线宽；所述量子阱层的不同区域掺杂有不同的杂质。
可选地，还包括：氮化镓缓冲层、发光反射层、填充介质；
所述氮化镓缓冲层设置在基板与N型电极层之间，覆盖整个基板表面；
所述填充介质包括填充在相邻的两个基色芯片之间的部分和覆盖在所述P型电极层上的部分；
所述发光反射层设置在所述填充介质上，覆盖整个基板。
可选地，所述填充介质为酚醛树脂；
所述发光反射层的材料为钛钯合金。
可选地，所述N型氮化镓层的材料为掺杂硅的氮化镓，所述P型氮化镓层的材料为掺杂镁的氮化镓。
可选地，所述N型电极层和P型电极层的材料为镍银合金。
可选地，所述氮化镓缓冲层、N型氮化镓层、P型氮化镓层的厚度均为
Figure GDA0002299624490000031
所述N型电极层和P型电极层的厚度均为
Figure GDA0002299624490000032
所述量子阱层的厚度为
Figure GDA0002299624490000033
所述发光反射层的厚度为
可选地，N型电极层的线宽为3-10μm。
为了解决上述问题，本发明公开了一种显示面板，所述显示面板的基板包括正反两面，在基板正面设置有薄膜晶体管，在基板反面设置有按照上述制备方法制备的固态光源。
与现有技术相比，本发明包括以下优点：
通过本发明实施例提供的显示面板，基板正面设置有薄膜晶体管，基板反面直接制作固态光源，无需进行背光源和阵列基板的贴合，显示面板更轻薄。并且显示面板背面的固态光源不含有汞介质，显示面板更环保。
进一步的，固态光源的发光原理与常用的白炽灯和气体放电灯的发光原理不同，因而固态光源的能量转化效率高，耗电量小，并且寿命长。
上述说明仅是本发明技术方案的概述，为了能够更清楚了解本发明的技术手段，而可依照说明书的内容予以实施，并且为了让本发明的上述和其它目的、特征和优点能够更明显易懂，以下特举本发明的具体实施方式。
附图说明
通过阅读下文优选实施方式的详细描述，各种其他的优点和益处对于本领域普通技术人员将变得清楚明了。附图仅用于示出优选实施方式的目的，而并不认为是对本发明的限制。而且在整个附图中，用相同的参考符号表示相同的部件。在附图中：
图1是根据本发明实施例一的显示面板的截面图；
图2是根据本发明实施例二的一种固态光源的制备方法的步骤流程图；
图3是根据本发明实施例二的N型电极层构图工艺后的截面图；
图4是根据本发明实施例二的量子阱层掺杂工艺的截面图；
图5是根据本发明实施例二的基色芯片构图工艺后的截面图；
图6是根据本发明实施例二的P型电极层构图工艺后的截面图；
图7是根据本发明实施例三的固态光源的截面图。
具体实施方式
下面将参照附图更详细地描述本公开的示例性实施例。虽然附图中显示了本公开的示例性实施例，然而应当理解，可以以各种形式实现本公开而不应被这里阐述的实施例所限制。相反，提供这些实施例是为了能够更透彻地理解本公开，并且能够将本公开的范围完整的传达给本领域的技术人员。
实施例一
参见图1，详细介绍本发明实施例提供的一种显示面板。
所述显示面板的基板101包括正反两面，在基板101正面设置有薄膜晶体管20，在基板101反面直接制作的固态光源10。
本实施例中，显示面板的基板101包括正反两面，首先翻转基板101，在基板101的反面直接制备固态光源10，固态光源10制备完成后翻转基板101，在基板101的正面制备薄膜晶体管20。
综上所述，本发明实施例中，显示面板的基板正面设置有薄膜晶体管，基板反面直接制作固态光源，无需进行背光源和阵列基板的贴合，显示面板更轻薄。并且显示面板背面的固态光源不含有汞介质，显示面板更环保。进一步的，固态光源的发光原理与常用的白炽灯和气体放电灯的发光原理不同，因而固态光源的能量转化效率高，耗电量小，并且寿命长。
实施例二
详细介绍本发明实施例提供的一种固态光源的制备方法。
参照图2，示出了本发明实施例提供的一种固态光源的制备方法的步骤流程图。所述方法包括：
步骤201，在基板表面沉积氮化镓形成氮化镓缓冲层。
本实施例中，制备固态光源首先在基板的表面沉积一层氮化镓GaN覆盖整个基板表面。GaN是极稳定的化合物，坚硬并且熔点很高，熔点约为1700℃。由于GaN坚硬，因此成为一种良好的涂层保护材料。在基板表面沉积GaN一方面可以起到保护基板的作用，另一方面便于沉积合金，使N型电极层与基板紧密结合、不易脱落。沉积GaN的方式有多种，常规的有MOCVD(Metal-organic Chemical Vapor DePosition，金属有机化合物化学气相淀积)，如APMOCVD(常压MOCVD)、LPMOCVD(低压MOCVD)。本发明实施例对氮化镓沉积工艺不作详细限定，可以根据实际情况选取。
本发明的一种优选实施例中，沉积氮化镓形成氮化镓缓冲层之前，翻转基板，用于将固态光源制备在基板反面。
步骤202，在所述氮化镓缓冲层上沉积合金，通过构图工艺制备固定线宽的电极，形成N型电极层。
本实施例中，沉积氮化镓形成氮化镓缓冲层后，在氮化镓缓冲层上沉积合金，沉积合金可以采用Sputter(溅射)设备，也可以采用其他设备，本发明实施例对此不作详细限定，可以根据实际情况选取。
沉积合金后，通过构图工艺将合金图案化，制备成固定线宽的电极，形成N型电极层，见图3所示。图3中氮化镓缓冲层107沉积在基板101表面，N型电极层102在氮化镓缓冲层107上，N型电极层102的宽度为固定线宽。本发明实施例对于电极的线宽不作详细限定，可以根据实际情况设置。
步骤203，在所述N型电极层上沉积N型氮化镓形成N型氮化镓层。
本实施例中，形成N型电极层后，沉积N型氮化镓。具体地，在沉积氮化镓的过程中掺杂杂质，杂质元素可以是四价元素，如硅，也可以是其他元素。掺杂的杂质为氮化镓提供多余的电子，使沉积的氮化镓为N型氮化镓。
步骤204，在所述N型氮化镓层上沉积铟氮化镓形成量子阱层。
本实施例中，沉积N型氮化镓形成N型氮化镓层后，在N型氮化镓层上沉积铟氮化镓，形成量子阱层。沉积铟氮化镓可以采用MOCVD，也可以采用其他方式，本发明实施例对此不作详细限定，可以根据实际情况进行选取。
步骤205，对所述量子阱层的不同区域掺杂不同的杂质。
本实施例中，对量子阱层掺杂杂质，杂质与铟氮化镓复合发光。由于掺杂的杂质不同，复合后产生的光线波长也不同，因此对量子阱层的不同区域掺杂不同的杂质，见图4，可以形成三种基色R(Red)G(Green)B(Blue)芯片，不同基色芯片发光的组合可以形成不同的颜色。图4中基板101、氮化镓缓冲层107、N型电极层102、N型氮化镓层103、量子阱层104从下向上依次叠加，光刻胶110未遮盖的区域为一个掺杂区域。
量子阱层的不同区域具体可以包括R基色芯片区域、G基色芯片区域、B基色芯片区域。优选地，R基色芯片区域为无掺杂的本征发光区域，发出红光。对G基色芯片区域可以掺杂磷、砷中任一种杂质，也可以掺杂其他杂质。对B基色芯片区域掺杂硅、碳或铝中任一种杂质，也可以掺杂其他杂质。
本发明的一种优选实施例中，对G基色芯片区域可以掺杂磷、砷中任一种杂质可以包括如下步骤：
S1，采用光刻胶110遮盖所述G基色芯片区域之外的铟氮化镓，见图4。
S2，对裸露的铟氮化镓掺杂磷、砷中任一种杂质。
S3，去除光刻胶110。去除光刻胶的工艺可以采用湿法去胶、干法去胶中至少一种。本发明实施例对此不作详细限定，可以根据实际情况进行选取。
步骤206，在所述量子阱层上沉积P型氮化镓形成P型氮化镓层。
本实施例中，对量子阱层掺杂杂质后，在量子阱层上沉积氮化镓，沉积过程中可以掺杂三价元素，如镁，也可以掺杂其他元素。掺杂的杂质为氮化镓提供多余的空穴，从而形成P型氮化镓层。
步骤207，将所述N型氮化镓层、量子阱层、P型氮化镓层通过构图工艺形成与N型电极同宽的基色芯片。
本实施例中，由于N型氮化镓、铟氮化镓、P型氮化镓与合金的刻蚀特性不同，因此N型氮化镓层、量子阱层、P型氮化镓层与合金采用两次构图工艺。
在沉积N型氮化镓、铟氮化镓、P型氮化镓后，通过构图工艺将N型氮化镓层、量子阱层、P型氮化镓层图案化。
本发明的一种优选实施例中，采用干法刻蚀工艺刻蚀P型氮化镓、铟氮化镓、N型氮化镓，其中刻蚀后的P型氮化镓、铟氮化镓、N型氮化镓均与N型电极同宽，见图5。图5中P型氮化镓层105、量子阱层104、N型氮化镓层103均与N型电极层102同宽。
步骤208，在所述P型氮化镓层上沉积合金，通过构图工艺制备与N型电极同宽的电极，形成P型电极层。
本实施例中，在将N型氮化镓层、铟氮化镓层、P型氮化镓层图案化之后，在P型氮化镓层上沉积合金，通过构图工艺将合金制备成与N型电极同宽的电极，形成P型电极层。
本发明的一种优选实施例中，采用湿法刻蚀工艺刻蚀合金形成P型电极，其中刻蚀后的P型电极与N型电极同宽。
形成P型电极层后，由N型电极层102、N型氮化镓层103、量子阱层104、P型氮化镓层105、P型电极层106构成的发光部件可以是R基色芯片111、G基色芯片112、B基色芯片113，见图6。
步骤209，使用填充介质填充相邻的两个基色芯片之间的间隙并覆盖P型电极层。
本实施例中，形成独立的基色芯片后，在相邻的两个基色芯片之间填充介质，用于隔离两个基色芯片。同时，填充介质覆盖P型电极层，用于保护基色芯片。
步骤210，在填充介质上沉积发光反射层。
本实施例中，在发光部件制备完成后，在填充介质上沉积发光反射层，用于将基色芯片发出的光反射至基板的另一面。
综上所述，本发明实施例中，在基板表面上制备固态光源，固态光源的结构简单，与基板为一体无需进行贴合，使显示面板更轻薄；并且制备过程中采用氮化镓而不含有汞介质，使显示面板更环保。进一步的，固态光源的发光原理与常用的白炽灯和气体放电灯的发光原理不同，因而固态光源的能量转化效率高，耗电量小，并且寿命长。
需要说明的是，对于前述的方法实施例，为了简单描述，故将其都表述为一系列的动作组合，但是本领域技术人员应该知悉，本发明并不受所描述的动作顺序的限制，因为依据本发明，某些步骤可以采用其他顺序或者同时进行。其次，本领域技术人员也应该知悉，说明书中所描述的实施例均属于优选实施例，所涉及的动作并不一定是本发明所必需的。
实施例三
参照图7，示出了本发明实施例中的一种固态光源的示意图。所述固态光源包括：N型电极层102、N型氮化镓层103、量子阱层104、P型氮化镓层105、P型电极层106；
其中，所述N型电极层102、N型氮化镓层103、量子阱层104、P型氮化镓层105、P型电极层106从基板表面向上依次叠加，并具有相同的线宽；所述量子阱层的不同区域掺杂有不同的杂质。
本发明的一种优选实施例中，氮化镓缓冲层107、发光反射层108、填充介质109；
所述氮化镓缓冲层107设置在基板101与N型电极层102之间，覆盖整个基板表面。
本发明的一种优选实施例中，所述填充介质109包括填充在相邻的两个基色芯片之间的部分和覆盖在所述P型电极层106上的部分。
本发明的一种优选实施例中，所述发光反射层108设置在所述填充介质109上，覆盖整个基板。
本发明的一种优选实施例中，所述填充介质109为酚醛树脂；
所述发光反射层108的材料为钛钯合金。
本发明的一种优选实施例中，所述N型氮化镓层103的材料为掺杂硅的氮化镓，所述P型氮化镓层105的材料为掺杂镁的氮化镓。
本发明的一种优选实施例中，所述N型电极层102和P型电极层106的材料为镍银合金。
本发明的一种优选实施例中，所述氮化镓缓冲层107、N型氮化镓层103、P型氮化镓层105的厚度均为
Figure GDA0002299624490000091
本发明的一种优选实施例中，所述N型电极层102和P型电极层106的厚度均为
Figure GDA0002299624490000092
本发明的一种优选实施例中，所述量子阱层104的厚度为
Figure GDA0002299624490000093
本发明的一种优选实施例中，所述发光反射层108的厚度为
Figure GDA0002299624490000094
本发明的一种优选实施例中，N型电极层102的线宽为3-10μm。
综上所述，本发明实施例中，固态光源制备在基板表面上，结构简单，与基板为一体无需进行贴合，使显示面板更轻薄；并且固态光源采用氮化镓而不含有汞介质，使显示面板更环保。进一步的，固态光源的发光原理与常用的白炽灯和气体放电灯的发光原理不同，因而固态光源的能量转化效率高，耗电量小，并且寿命长。
实施例四
参见图1，详细介绍本发明实施例提供的一种显示面板。
所述显示面板的基板101包括正反两面，在基板101正面设置有薄膜晶体管20，在基板101反面设置有按照实施例二所述的方法制备的固态光源10。
本实施例中，显示面板的基板101包括正反两面，首先翻转基板101，在基板101的反面制备固态光源10，固态光源10制备完成后翻转基板101，在基板101的正面制备薄膜晶体管20。
综上所述，本发明实施例中，显示面板的基板正面设置有薄膜晶体管，基板反面直接制作固态光源，无需进行背光源和阵列基板的贴合，显示面板更轻薄。并且显示面板背面的固态光源不含有汞介质，显示面板更环保。进一步的，固态光源的发光原理与常用的白炽灯和气体放电灯的发光原理不同，因而固态光源的能量转化效率高，耗电量小，并且寿命长。
本说明书中的各个实施例均采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似的部分互相参见即可。
本领域内的技术人员应明白，本发明实施例的实施例可提供为方法、装置、或计算机程序产品。因此，本发明实施例可采用完全硬件实施例、完全软件实施例、或结合软件和硬件方面的实施例的形式。而且，本发明实施例可采用在一个或多个其中包含有计算机可用程序代码的计算机可用存储介质(包括但不限于磁盘存储器、CD-ROM、光学存储器等)上实施的计算机程序产品的形式。
本发明实施例是参照根据本发明实施例的方法、终端设备(系统)、和计算机程序产品的流程图和/或方框图来描述的。应理解可由计算机程序指令实现流程图和/或方框图中的每一流程和/或方框、以及流程图和/或方框图中的流程和/或方框的结合。可提供这些计算机程序指令到通用计算机、专用计算机、嵌入式处理机或其他可编程数据处理终端设备的处理器以产生一个机器，使得通过计算机或其他可编程数据处理终端设备的处理器执行的指令产生用于实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能的装置。
这些计算机程序指令也可存储在能引导计算机或其他可编程数据处理终端设备以特定方式工作的计算机可读存储器中，使得存储在该计算机可读存储器中的指令产生包括指令装置的制造品，该指令装置实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能。
这些计算机程序指令也可装载到计算机或其他可编程数据处理终端设备上，使得在计算机或其他可编程终端设备上执行一系列操作步骤以产生计算机实现的处理，从而在计算机或其他可编程终端设备上执行的指令提供用于实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能的步骤。
尽管已描述了本发明实施例的优选实施例，但本领域内的技术人员一旦得知了基本创造性概念，则可对这些实施例做出另外的变更和修改。所以，所附权利要求意欲解释为包括优选实施例以及落入本发明实施例范围的所有变更和修改。
最后，还需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者终端设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者终端设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者终端设备中还存在另外的相同要素。
以上对本发明所提供的一种显示面板、固态光源的制备方法和固态光源，进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的一般技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。

Claims (14)

1.一种固态光源的制备方法，其特征在于，所述方法包括：
在基板表面沉积氮化镓形成氮化镓缓冲层；
在所述氮化镓缓冲层上沉积合金，通过构图工艺制备固定线宽的电极，形成N型电极层；
在所述N型电极层上沉积N型氮化镓形成N型氮化镓层；
在所述N型氮化镓层上沉积铟氮化镓形成量子阱层；
对所述量子阱层的不同区域掺杂不同的杂质；
在所述量子阱层上沉积P型氮化镓形成P型氮化镓层；
将所述N型氮化镓层、量子阱层、P型氮化镓层通过构图工艺形成与N型电极同宽的基色芯片；
在所述P型氮化镓层上沉积合金，通过构图工艺制备与N型电极同宽的电极，形成P型电极层；
使用填充介质填充相邻的两个基色芯片之间的间隙并覆盖P型电极层；
在填充介质上沉积发光反射层。
2.根据权利要求1所述的方法，其特征在于，所述对所述量子阱层的不同区域掺杂不同的杂质包括：
对G基色芯片区域掺杂磷、砷中任一种杂质；
对B基色芯片区域掺杂硅、碳或铝中任一种杂质。
3.根据权利要求2所述的方法，其特征在于，所述对G基色芯片区域掺杂磷、砷中任一种杂质包括：
采用光刻胶遮盖所述G基色芯片区域之外的铟氮化镓；
对裸露的铟氮化镓掺杂磷、砷中任一种杂质；
去除光刻胶。
4.根据权利要求1所述的方法，其特征在于，R基色芯片区域为无掺杂的本征发光区域。
5.根据权利要求1所述的方法，其特征在于，所述将所述N型氮化镓层、量子阱层、P型氮化镓层通过构图工艺形成与N型电极同宽的基色芯片包括：
采用干法刻蚀工艺刻蚀P型氮化镓、铟氮化镓、N型氮化镓，其中刻蚀后的P型氮化镓、铟氮化镓、N型氮化镓均与N型电极同宽。
6.根据权利要求1所述的方法，其特征在于，所述通过构图工艺制备与N型电极同宽的电极，形成P型电极层包括：
采用湿法刻蚀工艺刻蚀合金形成P型电极，其中刻蚀后的P型电极与N型电极同宽。
7.根据权利要求1所述的方法，其特征在于，在所述在基板表面沉积氮化镓形成氮化镓缓冲层之前，所述方法还包括：
翻转基板，用于将所述固态光源制备在基板反面。
8.一种固态光源，其特征在于，包括：N型电极层、N型氮化镓层、量子阱层、P型氮化镓层、P型电极层；
其中，所述N型电极层、N型氮化镓层、量子阱层、P型氮化镓层、P型电极层从基板表面向上依次叠加，并具有相同的线宽；所述量子阱层的不同区域掺杂有不同的杂质。
9.根据权利要求8所述固态光源，其特征在于，还包括：氮化镓缓冲层、发光反射层、填充介质；
所述氮化镓缓冲层设置在基板与N型电极层之间，覆盖整个基板表面；
所述填充介质包括填充在相邻的两个基色芯片之间的部分和覆盖在所述P型电极层上的部分；
所述发光反射层设置在所述填充介质上，覆盖整个基板。
10.根据权利要求9所述的固态光源，其特征在于，所述填充介质为酚醛树脂；
所述发光反射层的材料为钛钯合金。
11.根据权利要求8所述的固态光源，其特征在于，所述N型氮化镓层的材料为掺杂硅的氮化镓，所述P型氮化镓层的材料为掺杂镁的氮化镓。
12.根据权利要求8所述的固态光源，其特征在于，所述N型电极层和P型电极层的材料为镍银合金。
13.根据权利要求9所述的固态光源，其特征在于，所述氮化镓缓冲层、N型氮化镓层、P型氮化镓层的厚度均为
Figure FDA0002206644070000031
所述N型电极层和P型电极层的厚度均为
Figure FDA0002206644070000032
所述量子阱层的厚度为
所述发光反射层的厚度为
Figure FDA0002206644070000034
14.根据权利要求8所述的固态光源，其特征在于，所述N型电极层的线宽为3-10μm。
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