CN106883768A - Alkali glass polishing fluid and application under slightly acidic condition - Google Patents
Alkali glass polishing fluid and application under slightly acidic condition Download PDFInfo
- Publication number
- CN106883768A CN106883768A CN201710260794.9A CN201710260794A CN106883768A CN 106883768 A CN106883768 A CN 106883768A CN 201710260794 A CN201710260794 A CN 201710260794A CN 106883768 A CN106883768 A CN 106883768A
- Authority
- CN
- China
- Prior art keywords
- polishing fluid
- organic
- slightly acidic
- acidic condition
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention provides the alkali glass polishing fluid under a kind of slightly acidic condition, it is characterised in that:The effective ingredient of polishing fluid is rare earth oxide, and a kind of organic and/or inorganic buffer solution, polishing fluid is kept pH between 58.The polishing fluid is used for silicon-containing compound and other various oxides or semiconductor or conductor, glassware, monocrystalline silicon surface, the polishing of the insulating oxide of chip production.
Description
Technical field
The present invention relates to a kind of polishing fluid and production technology, particularly for process as glassware polishing fluid and
Using.
Background technology
Polishing fluid used in the production of current glass processing enterprise is mainly in the basic conditions, with large-particle cerium oxide
Powder does polishing rubbing agent, and Active sites are few, and dispersion stabilization is poor, and overall polishing rates are low, and What is more, is easily caused tight
, also there is the low defect of graduation polishing efficiency in the surface tear of weight.Polishing for a long time often substantially reduces polishing efficiency, causes to throw
The rapid abrasion of ray machine, low production efficiency, and the consumption of substantial amounts of consumptive material.Simultaneously because wide variety of in the market be generally
Alkaline silicate soda-lime glass, although being started using subacidity glass polishing solution, polishing efficiency is very high, and alkali glass is polished
Alkaline sodium silicate is discharged in journey, during the recycling of glass rare earth polishing, causes polishing fluid pH prolonging with polishing time
It is long constantly to raise, lose polishing efficiency.
The content of the invention
A kind of close to rare earth surface zero potential present invention aim at inventing, good with silicate surfaces compatibility, dispersion is steady
Qualitative good, graduation polishing efficiency is high, glazed surface scuffing is low, not the subacidity glass polishing solution of damage polish machine.
Technical scheme is:
Alkali glass polishing fluid under slightly acidic condition, effective ingredient is rare earth oxide, and a kind of organic and/or nothing
Machine buffer solution, make polishing fluid keep pH between 5-8.
Wherein in some specific embodiments, it is preferred that the polishing fluid PH is between 5.5-6.5.
Wherein in some specific embodiments, buffer solution accounts for the 0.001%~10% of the gross weight of polishing fluid.
Wherein in some specific embodiments, the preferred cerium oxide of rare earth oxide.
Wherein in some specific embodiments, the inorganic buffer solution be selected from inorganic acid or inorganic acid salt, preferably phosphoric acid or
One kind in phosphate, boric acid or borate.
Wherein in some specific embodiments, the organic buffer liquid is selected from organic acid or organic carboxylate, preferably organic
Aliphatic acid, organic fatty hydrochlorate, acrylic polymer, acrylic polymer salt, organic sulfonic acid, organic sulfonate, organic phosphoric acid,
One kind in organic phosphate, amino acid, amino-acid salt, polyaminoacid, polyamino acid.
The polishing fluid higher in order to be made suspendability, also contains wherein in some specific embodiments, in polishing fluid and adds
Plus agent, wherein additive and the mass ratio of rare earth oxide is 0.001~0.1 ︰ 1;The additive is selected from organic phosphate table
One kind in face activating agent, organic amine, organic ammonium salt, hydramine, polyoxyalkylene alcohol, polyacrylic acid, polyurethane.
Product suspension of the present invention is strong, should not deposit, and dispersion stabilization is good, and polishing effect stabilization, surface defect is low, polishing
No marking, can effectively improve graduation polishing efficiency, and polishing efficiency does not easily cause the damage to polishing machine up to 893 nm/minutes
Wound.
Second object of the present invention is to provide the application of invention product.
One of purposes is:For the polishing of silicon-containing compound and other various oxides or semiconductor or conductive surface.
The two of purposes are:For glass article surface polishing.
The glassware includes computer glass hard disk or FPD glass or CD or DVD stampers glass or optical glass system
Product.
The three of purposes are:For the polishing of the insulating oxide of chip production.
The four of purposes are:For the polishing of monocrystalline silicon.
Beneficial effects of the present invention:
1. present invention introduces weak acid/weak acid buffer system, particularly inorganic acid, inorganic acid salt, organic acid, organic carboxylic
Hydrochlorate, during the recycling of glass rare earth polishing, causes polishing fluid pH to be maintained in sour environment for a long time, keeps
Stock removal rate high.
2. the stabilizer such as surfactant is added in polishing fluid, and the dispersion stabilization for making polishing fluid is good, graduation polishing efficiency
High, glazed surface scuffing is low, not damage polish machine.
3. the polishing fluid can be used for silicon-containing compound and other various oxides or semiconductor or conductor, glassware,
The polishing of monocrystalline silicon surface, the insulating oxide of chip production.
Specific embodiment
The present invention is described in further details below in conjunction with specific embodiment.
Embodiment one:
1st, preparation method:
120 grams of Jinyang mixed rare-earth oxides containing cerium of in the market purchase are weighed, is added in 4517 grams of water, stirred at room temperature
Uniformly, it is made mixed rare-earth oxide suspension.
To keep polishing fluid peak efficiency, the surface that pH buffer citric acid/citrate solution is added to new synthesis changes
Property mixed rare-earth oxide suspension in, by pH stabilization in 3.5-6.5.
The polishing fluid higher in order to be made suspendability, can also again to silicate modified mixed rare-earth oxide suspension
38 grams of additives are separately added into, polishing fluid sample A, B, C, D is respectively prepared, E, F its pH are respectively 2.5,3.5,4.5,5,5.5,
6.5,8,8.5,10.5.
Additive can be that dodecylphosphoric acid receives surfactant.
2nd, application example:
Made sample is polished on SpeedFam 9B Twp-sided polishing machines.Push:0.21kg/cm2, lower wall and load plate
Rotating speed 30RPM, polishes flow velocity:200ml/ minutes.The serial experiment, polishing fluid disposably passes through, and repetitive cycling is not used.Throw
Light liquid polishing speed is respectively 367,539,655,721,835,779,697,547,558 nm/minutes, and glass surface is without drawing
Trace, polishing machine not damaged.Disposable polishing fluid clearly shown using result, pH=5.5, and polishing efficiency is highest when 6.5.
Embodiment two:
1st, preparation method:
650 grams of mixed rare-earth oxides are weighed, is added in 9850 grams of water, stirred at room temperature, be made mischmetal oxygen
Compound suspension.Poly- methyl silicon ether surface active agent 5g is added, then pH value to 5.5 is adjusted with phosphoric acid.
2nd, application example:
As above made sample will be polished on SpeedFam 9B Twp-sided polishing machines.Push:0.1kg/cm2, lower wall and load
Disk rotating speed 30RPM, polishes flow velocity:200ml/ minutes.Polishing experiments point A, two kinds of processes of B.A:Match somebody with somebody in polishing fluid liquid-supplying system
A pH value on-line monitoring system is put, while the phosphoric acid liquid-supplying system of configuration one 20%, in pH<PH is just automatically adjusted when 6 to arrive
5.5.Polishing fluid is recycled, and the polishing fluid devitrified glass polishing speed is 935 nm/minutes, glass surface no marking, polishing
Machine not damaged;B:Carried out by traditional glossing, polishing fluid is recycled, polishing fluid pH is not controlled, the polishing fluid devitrified glass
Polishing speed is 635 nm/minutes, glass surface no marking, polishing machine not damaged.
Embodiment three:
1. preparation method
A:0.05 gram of mixed rare-earth oxide is weighed, is added in 6300 grams of water, stirred at room temperature, be made mischmetal
Oxide suspension.PH phosphoric acid is transferred to 4.5.
B:3500 grams of mixed rare-earth oxides are weighed, is added in 2237 grams of water, stirred at room temperature, be made mischmetal
Oxide suspension.1500 grams of mol ratio potassium silicates are added to mixed rare-earth oxide suspension, is further stirred evenly, be made mixing
Rare earth oxygen adjusts pH value to 9 with phosphoric acid.More than the 200 grams suspension of synthesis are weighed, 1800 grams of water are added, stirred, then use boron
Acid adjustment pH is 4.5.
C:530 grams of mixed rare-earth oxides are weighed, is added in 6370 grams of water, stirred at room temperature, be made mischmetal
Oxide suspension.25 grams of potassium silicate is added to mixed rare-earth oxide suspension, is further stirred evenly, be made mischmetal oxygen
Compound, potassium silicate mixing suspension.It is 9.0 to adjust pH with hydrochloric acid again.
Mixed rare-earth oxide, the suspension mixed temperature of potassium silicate are risen to 60 DEG C, after being incubated ± 0.2 hour 2 hours
25 DEG C are cooled to again, and pH is adjusted to 4.5 with boric acid.
D:270 grams of mixed rare-earth oxides are weighed, is added in 3700 grams of water, stirred at room temperature, be made mischmetal
Oxide suspension.2500 grams of potassium silicate is added to mixed rare-earth oxide suspension, is further stirred evenly, be made mischmetal
Oxide, potassium silicate mixing suspension.It is 9.0 to adjust pH with hydrochloric acid again.
Mixed rare-earth oxide, the suspension mixed temperature of potassium silicate are risen to 60 DEG C, after being incubated ± 0.2 hour 2 hours
25 DEG C are cooled to again, and pH is adjusted to 4.5 with citric acid.
2nd, application example:
Made sample is polished on holy single side polishing machine machine high.Push:0.35kg/cm2, lower wall and load plate rotating speed
30RPM, polishing fluid single use polishes flow velocity:100ml/ minutes, polishing pad was SUBA600.The Series Polishing Liquid monocrystalline
4 cun of silicon wafer polishing speed of silicon are respectively A:377, B:390, C:289, D:414 nm/minutes, silicon chip surface no marking, polishing machine
Not damaged.
Through Test Summary:Subacidity glass composite polishing liquid is used for the siliceous chemical combination such as such as silica, silicate, monocrystalline silicon
The polishing of thing and other various oxides or semiconductor or conductive surface, glassware (computer glass hard disk or FPD glass
Or CD or DVD stampers glass or perspective) surface polishing, the polishing of the insulating oxide of chip production, monocrystalline silicon
Polishing, all with graduation polishing efficiency is high, not damage polish machine characteristic.
Claims (9)
1. the alkali glass polishing fluid under slightly acidic condition, it is characterised in that:The effective ingredient of polishing fluid is rare earth oxide, with
And a kind of organic and/or inorganic buffer solution, polishing fluid is kept pH between 5-8.
2. the alkali glass polishing fluid under the slightly acidic condition according to claim 1, it is characterised in that:The polishing fluid
PH is between 5.5-6.5.
3. the alkali glass polishing fluid under the slightly acidic condition according to claim 1, it is characterised in that:Buffer solution accounts for throwing
The 0.001%~10% of the gross weight of light liquid.
4. the alkali glass polishing fluid under the slightly acidic condition according to claim 1, it is characterised in that:The rare earth oxygen
The preferred cerium oxide of compound.
5. alkali glass polishing fluid according to claim 1 under slightly acidic condition, it is characterised in that:The inorganic buffer solution
Selected from inorganic acid, inorganic acid salt, the one kind in preferably phosphoric acid, phosphate, boric acid, borate.
6. alkali glass polishing fluid according to claim 1 under slightly acidic condition, it is characterised in that:The organic buffer liquid
Selected from organic acid, organic carboxylate, preferably organic aliphatic acid, organic fatty hydrochlorate, acrylic polymer, acrylic polymer
Salt, organic sulfonic acid, organic sulfonate, organic phosphoric acid, organic phosphate, amino acid, amino-acid salt, polyaminoacid, polyaminoacid
One kind in salt.
7. alkali glass polishing fluid according to claim 1 under slightly acidic condition, it is characterised in that:Also contain in polishing fluid
Additive, wherein additive are 0.001~0.1 ︰ 1 with the mass ratio of rare earth oxide;The additive is selected from organic phosphate
One kind in surfactant, organic amine, organic ammonium salt, hydramine, polyoxyalkylene alcohol, polyacrylic acid, polyurethane.
8. the application of the alkali glass polishing fluid in claim 1-7 under any described slightly acidic condition, for siliceous chemical combination
Thing and other various oxides or semiconductor or conductor, glassware, monocrystalline silicon surface, the insulating oxide of chip production
Polishing.
9. the application of alkali glass polishing fluid according to claim 7 under slightly acidic condition, it is characterised in that:The glass
Product includes computer glass hard disk or FPD glass or CD or DVD stampers glass or perspective.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710260794.9A CN106883768A (en) | 2017-04-20 | 2017-04-20 | Alkali glass polishing fluid and application under slightly acidic condition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710260794.9A CN106883768A (en) | 2017-04-20 | 2017-04-20 | Alkali glass polishing fluid and application under slightly acidic condition |
Publications (1)
Publication Number | Publication Date |
---|---|
CN106883768A true CN106883768A (en) | 2017-06-23 |
Family
ID=59182906
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710260794.9A Pending CN106883768A (en) | 2017-04-20 | 2017-04-20 | Alkali glass polishing fluid and application under slightly acidic condition |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106883768A (en) |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1218077A (en) * | 1997-11-06 | 1999-06-02 | 国际商业机器公司 | PH-buffered slurry and use thereof for polishing |
CN1861724A (en) * | 2006-06-09 | 2006-11-15 | 河北工业大学 | Nano SiO2 grinding material polishing fluid for electronic glass |
CN1919949A (en) * | 2006-08-23 | 2007-02-28 | 孙韬 | High precision composite polishing liquid, preparation method and use thereof |
CN1919950A (en) * | 2006-08-23 | 2007-02-28 | 孙韬 | High precision polishing liquid, preparation method and use thereof |
CN101016438A (en) * | 2007-02-09 | 2007-08-15 | 孙韬 | Alkaline computer hard disk polishing liquid and producing method thereof |
CN101544871A (en) * | 2009-04-22 | 2009-09-30 | 孙韬 | Efficient scratch-free glass polishing solution and manufacturing method thereof |
CN102627916A (en) * | 2012-03-23 | 2012-08-08 | 江苏中晶科技有限公司 | Glass polishing solution with reinforcement function |
CN102627917A (en) * | 2012-03-23 | 2012-08-08 | 江苏中晶科技有限公司 | Polishing accelerating agent for glass and silicon-containing compound and production method and application thereof |
CN102643614A (en) * | 2012-04-17 | 2012-08-22 | 江苏中晶科技有限公司 | Efficient glass polishing powder and preparation method thereof |
-
2017
- 2017-04-20 CN CN201710260794.9A patent/CN106883768A/en active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1218077A (en) * | 1997-11-06 | 1999-06-02 | 国际商业机器公司 | PH-buffered slurry and use thereof for polishing |
CN1861724A (en) * | 2006-06-09 | 2006-11-15 | 河北工业大学 | Nano SiO2 grinding material polishing fluid for electronic glass |
CN1919949A (en) * | 2006-08-23 | 2007-02-28 | 孙韬 | High precision composite polishing liquid, preparation method and use thereof |
CN1919950A (en) * | 2006-08-23 | 2007-02-28 | 孙韬 | High precision polishing liquid, preparation method and use thereof |
CN101016438A (en) * | 2007-02-09 | 2007-08-15 | 孙韬 | Alkaline computer hard disk polishing liquid and producing method thereof |
CN101544871A (en) * | 2009-04-22 | 2009-09-30 | 孙韬 | Efficient scratch-free glass polishing solution and manufacturing method thereof |
CN102627916A (en) * | 2012-03-23 | 2012-08-08 | 江苏中晶科技有限公司 | Glass polishing solution with reinforcement function |
CN102627917A (en) * | 2012-03-23 | 2012-08-08 | 江苏中晶科技有限公司 | Polishing accelerating agent for glass and silicon-containing compound and production method and application thereof |
CN102643614A (en) * | 2012-04-17 | 2012-08-22 | 江苏中晶科技有限公司 | Efficient glass polishing powder and preparation method thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108239484B (en) | Alumina polishing solution for sapphire polishing and preparation method thereof | |
CN100506936C (en) | High precision polishing liquid, preparation method and use thereof | |
JP3986960B2 (en) | Abrasive | |
CN109135580B (en) | Polishing solution for glass and preparation method thereof | |
CN100491074C (en) | Method for controlling roughness of silicon crystal substrate material surface | |
CN103571333B (en) | CMP (Chemical-Mechanical Polishing) polishing liquid with mixed grinding materials for alkaline sapphire substrate and preparation method thereof | |
CN107987732B (en) | Polishing solution for sapphire plane polishing and preparation method thereof | |
CN103450812B (en) | Polishing solution for sapphire substrate | |
CN101367189A (en) | Silicon slice glazed surface scuffing control method | |
CN100528480C (en) | Control method for high removal rate of sapphire substrate material | |
CN106463382A (en) | Polishing composition | |
CN102888193A (en) | Chemical mechanical polishing solution for processing surface of sapphire or carborundum wafer for LED (Light Emitting Diode) substrate slice and preparation method thereof | |
CN105385357A (en) | Polishing solution for A orientation sapphire polishing, and preparation method thereof | |
CN107987731A (en) | A kind of polishing fluid for sapphire 3D polishings and preparation method thereof | |
CN104449403B (en) | The compound alkali polishing fluid and its recycling method of saphire substrate material | |
CN101693813B (en) | Silicon-based fine polishing liquid | |
CN104830234A (en) | A-directional sapphire mobile phone cover plate polishing solution and preparation method thereof | |
CN102618174A (en) | Silicon wafer chemical-mechanical polishing composition with high dilution ratio and high stability | |
JP2000080349A (en) | Abrasive composition and processing method of silicon wafer using same | |
CN113150697A (en) | Polishing solution for polishing surface of monocrystalline silicon wafer and preparation method thereof | |
CN110511679A (en) | A kind of efficient compound abrasive chemical mechanical polishing liquid of Sapphire Substrate | |
CN103740281B (en) | A kind ofly be applicable to polishing composition of large size silicon wafer polishing and preparation method thereof | |
CN106349945B (en) | A kind of polishing composition | |
CN102399496A (en) | Abrasive composition for rough polishing of wafers | |
CN110668451A (en) | Preparation method of silicon dioxide sol and sapphire chemical mechanical polishing solution |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170623 |
|
RJ01 | Rejection of invention patent application after publication |