CN106881535A - The processing method and processing unit (plant) of chip - Google Patents

The processing method and processing unit (plant) of chip Download PDF

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Publication number
CN106881535A
CN106881535A CN201611059362.3A CN201611059362A CN106881535A CN 106881535 A CN106881535 A CN 106881535A CN 201611059362 A CN201611059362 A CN 201611059362A CN 106881535 A CN106881535 A CN 106881535A
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China
Prior art keywords
elliptic orbit
laser light
processing
unit
chip
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CN201611059362.3A
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CN106881535B (en
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能丸圭司
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Disco Corp
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Disco Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B23K26/046—Automatically focusing the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Laser Beam Processing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Problem of the invention is the processing method and processing unit (plant) for providing chip, is able to maintain that the maximum repetition rate of limited pulse laser light, and simultaneously form through hole at multiple positions.According to the present invention, the processing method of the chip has the steps：Elliptic orbit generation step, 4 devices is generated as a group by the elliptic orbit comprising circle of 4 electronic padses for being disposed in same position in each device；Laser light irradiation step, describes the elliptic orbit while from the back side of chip to position irradiated with pulse laser light corresponding with 4 electronic padses；And elliptic orbit positioning step, the elliptic orbit is positioned such that to the elliptic orbit by position corresponding with 4 electronic padses that next should be processed, while feeding is relatively processed to the chip and pulse laser light illumination unit and being implemented the laser light irradiation step and the elliptic orbit positioning step successively on one side and being implemented through hole processing.

Description

The processing method and processing unit (plant) of chip
Technical field
The present invention relates to the processing method and processing unit (plant) of chip, with the device being disposed on the machined objects such as semiconductor wafer The electronic pads of part is correspondingly formed Laser Processing hole.
Background technology
In semiconductor devices manufacturing process, by grid on the front of the semiconductor wafer as substantially circular plate shape Being referred to as the segmentation preset lines of spacing track and marking off multiple regions for shape arrangement, forms IC, LSI in the region for marking off Deng device.Also, by along spacing track semiconductor wafer is cut off and the region to being formed with device split from And produce semiconductor chip one by one.
In order to realize miniaturization, the multifunction of device, it is proposed that following module structure：Layer is carried out to multiple devices It is folded, and the electronic pads on be laminated device (also referred to as pad) connection will be arranged at.The module structure uses following structure (referring for example to patent document 1.)：The position for being provided with electronic pads in semiconductor wafer irradiates laser beam and is formed and reached The electric conductivity such as the through hole (Laser Processing hole) of the electronic pads, the aluminium that embedment is connected with electronic pads in the through hole (Laser Processing hole) Material.
Patent document 1：Japanese Unexamined Patent Publication 2008-062261 publications
In order to form above-mentioned through hole, it is necessary to the multiple irradiated with pulse laser light in position, in order to realize production efficiency Improve, it is necessary to improve the repetition rate of pulse laser light.But, there is a problem of as follows：When with repetition rate higher To a position continuously irradiated with pulse laser light when, cracked on chip because heat is accumulated, the reduction of the quality of device.
The content of the invention
Also, also there is following situation：Although different according to the device to be manufactured, in order to be processed because of through hole And crack and the repetition rate of the pulse laser light for processing is limited (for example, being 10kHz).Therefore, originally The invention technical problem to be solved is, there is provided the processing method and processing unit (plant) of chip, has both maintained restricted pulse to swash The maximum repetition rate of light light, it is also possible to simultaneously form through hole at multiple positions.
In order to solve above-mentioned main technical problem, according to the present invention, there is provided a kind of processing method of chip, Duo Geqi Part is divided by segmentation preset lines and is formed on the front of the chip, wherein, the processing method of the chip has the steps： Positional information storing step, with positional information of each device in the chip together, to the multiple electrodes formed on each device The positional information padded in each device is stored；Elliptic orbit generation step, using 4 adjacent two-by-two each other devices as Individual group and generate by elliptic orbit of 4 electronic padses for being disposed in same position in each device comprising circle；Swash Light light irradiating step, describes the elliptic orbit while utilizing pulse laser light illumination unit pair and 4 electronic padses Corresponding position irradiated with pulse laser light；And elliptic orbit positioning step, this is ellipse to be positioned such that to the elliptic orbit Circular orbit by position corresponding with 4 electronic padses that next should be processed, in the processing method of the chip, while to this Chip and pulse laser light illumination unit are relatively processed feeding, implement successively on one side the laser light irradiation step with The elliptic orbit positioning step and to the chip implement through hole processing, the through hole process for formed it is corresponding with the electronic pads lead to Hole.
It is preferred that in the laser light irradiation step, being oriented to by 4 states of electronic pads in the elliptic orbit The lower through hole processing for implementing that multiple pulse laser light are irradiated to position corresponding with 4 electronic padses.
The laser light irradiation step can be performed by 4 devices for constituting a group, in laser beam Irradiate and locally implement through hole processing in 2 devices for the 1st time, processed and laser through hole is locally performed The irradiation of light to remaining unprocessed part in other 2 device of the 2nd time to implement through hole processing, and it is right thus to complete In the through hole processing of all of electronic pads of 2 other devices, will by implement the laser light irradiation step and with institute 2 devices that some electronic padses accordingly complete through hole processing are separated from the group, are added by locally having carried out through hole 2 devices of work and adjacent unprocessed 2 devices in processing direction of feed form new group, and the elliptic orbit is determined Positioned at 4 devices that new group is included, and implement the laser light irradiation step and the elliptic orbit positioning step successively.
Numbering is assigned successively particular preferably by the multiple electrodes pad to being disposed in each device and is divided into the of odd-numbered The second electrode pad group of one electrode pad set and even-numbered and set the positional information, to constitute 4 devices of group In the case that part performs the laser light irradiation step, in the laser light irradiation step, for 4 devices this first The electrode pad set of the unprocessed any one party in electrode pad set and second electrode pad group, describes elliptic orbit while irradiating Pulse laser light, thus completes through hole processing corresponding with all of electronic pads of 2 devices, and will complete to all of 2 devices of the through hole processing of electronic pads are separated from the group, by only in first electrode pad group and second electrode pad group 2 devices and adjacent unprocessed 2 devices in processing direction of feed that any one party has carried out through hole processing are formed newly Group, the elliptic orbit is positioned at 4 devices that new group is included, to first electrode pad group, second electrode pad group In unprocessed electrode pad set implement the laser light irradiation step and the elliptic orbit positioning step, be sequentially completed to 2 The through hole processing of device.
Additionally, it is preferred that in the periphery of the chip, cannot by 4 adjacent two-by-two each other device junctions into group situation Under, by the device junction less than 4 into group, and stop the irradiation of the laser beam in the region being short of device.
Additionally, in order to solve above-mentioned main technical problem, according to the present invention, there is provided a kind of processing unit (plant), its composition Be comprising：Holding unit, it keeps in the plane specified by X-axis, Y-axis to chip, and multiple devices are by segmentation preset lines Divide and be formed on the front of the chip；And laser light irradiation unit, it is to the chip that is maintained on the holding unit Irradiate laser beam and implement processing, wherein, the processing unit (plant) has following unit：Positional information storage unit, its with it is each Together, the positional information of the multiple electrodes pad to being formed on each device is stored positional information of the device in the chip； Elliptic orbit generation unit, it believes 4 adjacent two-by-two each other devices as a group according to the position of the electronic pads Breath generates the elliptic orbit comprising circle of 4 electronic padses by being disposed in same position；Elliptic orbit positioning unit, its The elliptic orbit is positioned at position corresponding with 4 electronic padses that should be processed；And laser light irradiation unit, one While describing the elliptic orbit pair position irradiated with pulse laser light corresponding with 4 electronic padses on one side, the processing unit (plant) is on one side Feeding is relatively processed to chip and pulse laser light while making the laser light irradiation unit and the elliptic orbit fixed Bit location is acted and is formed through hole.
Can be that the laser light irradiation unit is included：Oscillator, it vibrates pulse with the repetition rate M of 4 multiple Laser beam；And concentrator, it oscillator is vibrated the pulse laser light for and is condensed to what the holding unit was kept On chip, the elliptic orbit generation unit is disposed between the oscillator and the concentrator, humorous by X-axis resonant scanner and Y-axis The scanner that shakes is constituted, and the X-axis resonant scanner makes the direction of illumination of laser beam in X with the 1/4 of repetition rate M repetition rate Swung on direction of principal axis, the Y-axis resonant scanner makes the direction of illumination of laser beam in Y with the 1/4 of repetition rate M repetition rate Swung on direction of principal axis, the elliptic orbit generation unit generates the elliptic orbit to each electronic pads dispense-pulse laser beam, and this is each The positional information of electronic pads is stored in the positional information storage unit, and the elliptic orbit positioning unit is swept by X-axis scanner and Y-axis Device composition is retouched, the X-axis scanner makes the elliptic orbit that the elliptic orbit generation unit is generated move in the X-axis direction, the Y-axis Scanner makes the elliptic orbit move in the Y-axis direction, and the elliptic orbit positioning unit is stored according to the positional information is stored in The positional information of the electronic pads of unit and the elliptic orbit is positioned to by 4 electronic padses of processing object, additionally, it is preferred that should The sinusoidal phase that X-axis resonant scanner is generated is relative to the sinusoidal phase that the Y-axis resonant scanner is generated Position skew pi/2.
The laser processing of chip of the invention, with the steps：Positional information storing step, with each device Positional information of the part in the chip together, enter by the positional information to the multiple electrodes pad that is formed on each device in each device Row storage；Elliptic orbit generation step, 4 adjacent two-by-two each other devices are generated by each device as a group 4 electronic padses for being disposed in same position comprising circle elliptic orbit；Laser light irradiation step, while describe should Elliptic orbit is while using the corresponding position irradiated with pulse laser light of 4 electronic padses of pulse laser light illumination unit pair and this Line；And elliptic orbit positioning step, the elliptic orbit is positioned such that the elliptic orbit by with next should add The corresponding position of 4 electronic padses of work, in the processing method of the chip, while irradiating single to the chip and pulse laser light Unit is relatively processed feeding, implement the laser light irradiation step and the elliptic orbit positioning step successively on one side and to this Chip implements through hole processing, and the through hole is processed for forming through hole corresponding with the electronic pads, thereby, it is possible to be maintained at 1 The maximum repetition rate (for example, 10kHz) that will not be cracked during the formation of the through hole at position below, and can be with simultaneously The mode for carrying out implements the through hole processing pair position irradiation laser beam corresponding with multiple electrodes pad, it is possible to increase productivity.
Also, the laser light irradiation step is performed by 4 devices for constituting a group, in laser beam Irradiate and locally implement through hole processing in 2 devices for the 1st time, locally performing through hole processing and laser Thus the irradiation of light completes pin to implement through hole processing to remaining unprocessed part in other 2 device of the 2nd time The through hole processing of all of electronic pads of 2 devices other to this, can by implement the laser light irradiation step and incite somebody to action 2 devices for accordingly completing through hole processing with all of electronic pads are separated from the group, by locally being led to 2 devices of hole machined and adjacent unprocessed 2 devices in processing direction of feed constitute new group, by the oval rail Road is positioned at 4 devices that new group is included, and the laser light irradiation step is implemented successively and the elliptic orbit positions step Suddenly, even if thus follow the chip processing feed speed relative with laser light irradiation unit to by next should The elliptic orbit of each position coordinate of the electronic pads of processing be positioned such that the situation of the direction of illumination deflection of laser beam Under, it is also possible to reduce the angle of deflection adjustment, can make laser beam be converged in allowed band relative to the incidence angle of chip and Implement appropriate processing.
Additionally, processing unit (plant) of the invention, consists of and includes：Holding unit, it is flat what is specified by X-axis, Y-axis Chip is kept on face, multiple devices are divided by segmentation preset lines and are formed on the front of the chip；And laser light Line illumination unit, it implements processing to the wafer illumination laser beam being maintained on the holding unit, wherein, the processing unit (plant) With following unit：Positional information storage unit, its positional information with each device in the chip together, on each device The positional information of the multiple electrodes pad for being formed is stored；Elliptic orbit generation unit, it is by 4 adjacent two-by-two each other devices Part generates including for 4 electronic padses by being disposed in same position as a group according to the positional information of the electronic pads Circle is in interior elliptic orbit；Elliptic orbit positioning unit, be positioned at the elliptic orbit and 4 electronic padses that should be processed by it Corresponding position；And laser light irradiation unit, it describes the elliptic orbit while pair corresponding with 4 electronic padses Position irradiated with pulse laser light, the processing unit (plant) are while be relatively processed feeding to chip and pulse laser light on one side The laser light irradiation unit and the elliptic orbit positioning unit is set to be acted and be formed through hole, therefore, as described above, when When irradiating multiple laser beam to 1 position and forming through hole, it is able to maintain that to be that will not be cracked in the formation of through hole Below maximum repetition rate, and implement pair position irradiation laser light corresponding with multiple electrodes pad in the way of to carry out simultaneously The through hole processing of line, it is possible to increase productivity.
Brief description of the drawings
Fig. 1 is the stereogram of the laser processing device of the processing method for implementing machined object of the invention.
Fig. 2 is for the laser light irradiation unit to being loaded on the laser processing device shown in Fig. 1, elliptic orbit life Into the block diagram that unit, elliptic orbit positioning unit are illustrated.
Fig. 3 is the block diagram of the control unit loaded on laser processing device shown in Fig. 1.
Fig. 4 is the top view and partial enlargement of the semiconductor wafer that laser processing device as shown in Figure 1 is processed Figure.
(a) of Fig. 5~(d) is the explanatory diagram of the through hole processing for showing the first embodiment performed by the present invention.
(a), (b) of Fig. 6 is the explanatory diagram of the action for showing the elliptic orbit generation unit shown in Fig. 2.
(a), (b) of Fig. 7-1 is the explanatory diagram of the through hole processing for showing the second embodiment performed by the present invention.
(c) of Fig. 7-2 is the explanatory diagram of the through hole processing for showing the second embodiment performed by the present invention.
Label declaration
1：Laser processing device；2：Static base station；3：Chuck table mechanism；36：Chuck table；4：Laser beam shines Penetrate component；5：Laser light irradiation unit；52：Output adjustment unit；53：Speculum；54：Concentrator；6：Shooting unit；7：It is ellipse Circular orbit generation unit；71：Y-axis resonant scanner；72：X-axis resonant scanner；8：Elliptic orbit positioning unit；81：X-axis is swept Retouch device (acousto-optic element (AOD))；82：Y axis scanning device (acousto-optic element (AOD))；20：Semiconductor wafer；21：Segmentation preset lines； 22：Device.
Specific embodiment
Hereinafter, preferred on processing method of the invention and for implementing the processing unit (plant) of the processing method One implementation method, referring to the drawings and be described in detail.
The stereogram of the laser processing device 1 of processing method for implementing chip of the invention, the laser are shown in Fig. 1 Processing unit (plant) 1 has：Static base station 2；Chuck table mechanism 3, it in the X-direction shown in arrow X can move Mode is disposed in the static base station 2, and machined object is kept；And laser light irradiation component 4, it is disposed in static On base station 2.Chuck table mechanism 3 has：A pair of guide rails 31,31, they are abreast disposed in static base station along X-direction On 2；1st sliding shoe 32, it is disposed on the guide rail 31,31 in the way of it can move in the X-axis direction；2nd sliding shoe 33, It is disposed on the 1st sliding shoe 32 in the way of it can be moved in the Y direction shown in the arrow Y vertical with X-direction； Cover workbench 35, it is supported on the 2nd sliding shoe 33 by cylinder part 34；And as the chuck table of holding unit 36, it keeps to machined object.The chuck table 36 has the absorption formed by the porous material with aeration Disk 361, quilt is kept by being acted attraction unit (not shown) in the retaining surface of the upper surface as suction tray 361 Machining object.Revolve the chuck table 36 of such composition by the pulse motor (not shown) being disposed in cylinder part 34 Turn.In addition, be equipped with the fixture 362 being fixed for the framework to ring-type in chuck table 36, the fixture 362 across Protection band is supported to machined object.
Above-mentioned 1st sliding shoe 32 is provided with chimeric a pair of above-mentioned a pair of guide rails 31,31 by guide groove on the lower surface 321st, 321, and a pair of guide rails 322,322 being formed parallel to along Y direction is provided with an upper.So constitute 1st sliding shoe 32 be configured to by make by guide groove 321,321 it is chimeric with a pair of guide rails 31,31 and can along a pair of guide rails 31, 31 move in the X-axis direction.The chuck table mechanism 3 of diagram has for making the 1st sliding shoe 32 along a pair of guide rails 31,31 The X-direction mobile unit 37 for moving in the X-axis direction.In X-direction mobile unit 37, abreast it is disposed in above-mentioned a pair External screw rod 371 between guide rail 31 and 31 and the output for carrying out the pulse motor 372 of rotation driving to the external screw rod 371 Axle transmission links.In addition, what is be protrusively provided on the central lower surface of the sliding shoe 32 of external screw rod 371 and the 1st is (not shown) outer What is formed on threaded block screws togather through internal thread hole.Therefore, by pulse motor 372 make external screw rod 371 carry out rotate forward and It is driven reverse, and the 1st sliding shoe 32 is moved in the X-axis direction along guide rail 31,31.
The laser processing device 1 of diagram has what is detected for the X-direction position to above-mentioned chuck table 36 X-direction position detection unit (not shown).The X-direction position detection unit is by linear staff (not shown) and (not shown) Read head is constituted, and the linear staff is arranged along guide rail 31, and the read head is disposed in the 1st sliding shoe 32, with the 1st sliding shoe 32 1 Moved with along the linear staff.The read head of the X-direction position detection unit is for example every 1 μm by 1 pulse of pulse Signal is sent to control unit described later.Also, control unit described later by being counted to the pulse signal being input into and Detect X-direction position to chuck table 36.In addition, in the driving source as above-mentioned X-direction mobile unit 37 In the case of using pulse motor 372, it is also possible to by the control described later to the output drive signal of pulse motor 372 The driving pulse of unit is counted and the position in the X-direction of chuck table 36 is detected.Also, as upper The driving source for stating X-direction mobile unit 37 is used in the case of servomotor, it is also possible to by control unit described later Send the pulse signal that the rotary encoder detected to the rotating speed of servomotor is exported, control unit is to being input into Pulse signal is counted, and the X-direction position of chuck table 36 is detected, in the present invention on to the X-axis The form of the unit that direction position is detected is not particularly limited.
Above-mentioned 2nd sliding shoe 33 is provided with set one on the upper surface with above-mentioned 1st sliding shoe 32 on the lower surface A pair be fitted together to guide rail 322,322 are configured to be led with a pair by guide groove 331,331 by making this by guide groove 331,331 Rail 322,322 is fitted together to and moves in the Y-axis direction.The chuck table mechanism 3 of diagram has Y direction mobile unit 38, the Y Direction of principal axis mobile unit 38 is used to make the 2nd sliding shoe 33 along being arranged at a pair of guide rails 322,322 of the 1st sliding shoe 32 in Y-axis Side moves up.Y direction mobile unit 38 is included：External screw rod 381, it is abreast disposed in above-mentioned a pair of guide rails 322,322 Between；And the driving source such as pulse motor 382, it is used to carry out rotation driving to the external screw rod 381.The external screw rod 381 One end is rotatably freely supported on the drive tab 383 fixed on the upper surface of above-mentioned 1st sliding shoe 32, the other end and above-mentioned arteries and veins The output shaft transmission for rushing motor 382 links.In addition, institute's protrusion on the central lower surface of the sliding shoe 33 of external screw rod 381 and the 2nd Being screwed togather through internal thread hole formed in the external screw thread block (not shown) for setting.Therefore, by the external spiral shell of pulse motor 382 Bar 381 carries out rotating and reverse driving, and the 2nd sliding shoe 33 is moved in the Y-axis direction along guide rail 322,322.
The laser processing device 1 of diagram has to be used to detect not the Y direction position of above-mentioned 2nd sliding shoe 33 The Y direction position detection unit of diagram.The Y direction position detection unit is same with above-mentioned X-direction position detection unit Sample, is made up of linear staff (not shown) and read head (not shown), and the linear staff is arranged along guide rail 322, the read head The 2nd sliding shoe 33 is disposed in, is together moved along the linear staff with the 2nd sliding shoe 33.The Y direction position detection unit The read head is for example sent to control unit described later every 1 μm of pulse signal by 1 pulse.Also, control described later is single Unit is detected by being counted to the pulse signal being input into the Y direction position of the 2nd sliding shoe 33.In addition, In the case of pulse motor 382 being used as the driving source of above-mentioned Y direction mobile unit 38, it is also possible to by to pulse The driving pulse of the control unit described later of the output drive signal of motor 382 is counted and to the Y-axis side of the 2nd sliding shoe 33 Detected upward position.Also, the feelings of servomotor are being used as the driving source of above-mentioned Y direction mobile unit 38 Under condition, it is also possible to defeated by the rotary encoder institute detected to the rotating speed of servomotor to control unit described later transmission The pulse signal for going out, control unit is counted to the pulse signal being input into, and to the Y direction position of the 2nd sliding shoe 33 Detected.
Above-mentioned laser light irradiation component 4 has：Supporting member 41, its configuration is on above-mentioned static base station 2；Shell 42, It is supported by the supporting member 41, and substantial level is extended；Laser light irradiation unit 5, it is disposed in the shell 42；And clap Unit 6 is taken the photograph, its leading section for being disposed in shell 42, the machining area to that should be laser machined is detected.The shooting list First 6 in addition to the common capturing element (CCD) shot by visible rays, also by infrared illumination unit, optics System, capturing element (infrared C CD) etc. are constituted, and send captured picture signal to control unit described later, wherein, should Infrared illumination unit irradiates infrared ray to machined object, and it is infrared that the optical system captures that the infrared illumination unit irradiated Line, the capturing element (infrared C CD) exports electric signal corresponding with the infrared ray that the optical system is captured.
Reference picture 2 is to above-mentioned laser light irradiation unit 5 and the ellipse for being additional to laser light irradiation unit 5 and arranging Track generation unit 7, elliptic orbit positioning unit 8 are illustrated.The laser light irradiation unit 5 of diagram is configured to include：Arteries and veins Laser beam oscillator 51 is rushed, it irradiates laser beam with repetition rate M (for example, 40kHz)；(the decay of output adjustment unit Device) 52, it is adjusted to the output that the pulse laser light for is vibrated from the pulsed laser light line oscillator 51；Change in direction Mirror 53, its light path travel direction for being used for the pulse laser light to being irradiated towards the machined object on chuck table 36 turns Change；And collector lens 54, it is condensed on the semiconductor wafer 20 that chuck table 36 is kept and is irradiated.In addition, On the chuck table 36 shown in Fig. 2, the direction vertical with the plane described in accompanying drawing is set to X-direction, by right and left To being set to Y direction.
As shown in Fig. 2 elliptic orbit generation unit 7 is disposed in the pulsed laser light line oscillator 51 and the collector lens 54 Between, according to the positional information of the electronic pads for being stored in control unit described later 9 so that from pulsed laser light line oscillator 51 Vibrating the track of the direction of illumination of the pulse laser light for turns into elliptic orbit (in the present invention, certainly also comprising ellipse The short axle circular orbit consistent with the length of major axis), the elliptic orbit is arranged by 4 devices after packet when being observed from the back side In 4 electronic padses of same position, the elliptic orbit generation unit 7 is for example by Y-axis resonant scanner 71 and X-axis resonant scanner 72 are constituted, and the Y-axis resonant scanner 71 vibrates the 1/4 of the repetition rate M of the laser beam for according to laser beam oscillating unit Frequency (for example, 10kHz) direction of illumination of laser beam is swung in the Y-axis direction, the X-axis resonant scanner 72 according to The frequency (for example, 10kHz) of the 1/4 of repetition rate M makes the direction of illumination of laser beam swing in the X-axis direction.
8 pairs of elliptic orbits of elliptic orbit positioning unit are adjusted and position so that generated by the elliptic orbit single Unit 7 and be in the direction of illumination of the pulse laser light of elliptic orbit track all the time by with chip on should process 4 The corresponding position coordinates of electronic pads, the elliptic orbit positioning unit 8 is ellipse for example by what is generated to the elliptic orbit generation unit 7 Circular orbit enters the X-axis scanner (acousto-optic element (AOD)) 81 of horizontal deflection adjustment and to the elliptic orbit in Y-axis in the X-axis direction The Y axis scanning device (acousto-optic element (AOD)) 82 of the enterprising horizontal deflection adjustment in direction is constituted, also with damper damper in selectivity The damper 83 of the absorption laser beam used in the case of the irradiation of ground stopping laser beam.Constitute the X-axis scanner 81, The acousto-optic element (AOD) of Y axis scanning device 82 has deflection angle adjustment unit, and the deflection angle adjustment unit is according to from described later Control unit 9 apply voltage and the deflection angle of the laser beam by the acousto-optic element (AOD) is adjusted so that energy The elliptic orbit in enough laser light irradiation directions for being generated elliptic orbit generation unit by the effect of X-axis scanner 81 Deflect in the X-axis direction, equally can make the elliptic orbit in laser light irradiation direction by the effect of Y axis scanning device 82 Deflect in the Y-axis direction.
In addition, elliptic orbit generation unit 7, elliptic orbit positioning unit 8 are not limited to above-mentioned specific structure, as long as having Identical function, can be substituted for unit known to others.For example, each acousto-optic element (AOD) can be changed to realize The piezoelectric scanner of identical deflection, electrical scanner.Also, the above-mentioned speculum 53 can also be configured to scanning mirror 53 ', The scanning mirror 53 ' is further adjusted school to the direction of illumination for having passed through the pulse laser light of elliptic orbit positioning unit 8 Just.
The laser processing device 1 of diagram has the control unit 9 shown in Fig. 3.Control unit 9 is made up of computer, is had： Central operation treatment (CPU) 91 of calculation process, read-only depositing of being preserved to control program etc. are carried out according to control program It is reservoir (ROM) 92, the read-write random access memory (RAM) 93, input interface 94 preserved to operation result etc., defeated Outgoing interface 95.
The semiconductor wafer 20 of machined object processed by the processing method of through hole of the invention is shown as in Fig. 4 Top view (bottom) and expression 4 figures of device 22 (top) are amplified to one part, wherein, 4 devices 22 It is adjacent two-by-two each other.Semiconductor wafer 20 on being supported on the framework F of ring-type by protection band T as diagram, overleaf Side be ground obtained from thickness be 100 μm the substrate formed by silicon front on by a plurality of spacing track that is arranged in clathrate 21 mark off multiple regions, and the devices such as IC, LSI 22 are respectively formed with the region for marking off, and are being formed with device 22 just Surface side is bonded on protection band T.Each device 22 is all with identical structure.It is respectively formed with the front of each device 22 Multiple electrodes pad P1~P20.Electronic pads P1~P20It is made up of metal materials such as aluminium, copper, gold, platinum, nickel, thickness is formed as 1~ 5μm。
In above-mentioned semiconductor wafer 20, rear side irradiated with pulse laser light of the processing method of the invention from substrate Line and wear out the through hole for reaching each electronic pads, want to wear out through hole in the semiconductor wafer 20, it is necessary to using shown in Fig. 1 Laser processing device 1.In addition, in the formation of through hole, be not limited to from back side illuminaton laser, can also be from front, be formed The side for having device is irradiated, and is not limited to the embodiment.Laser processing device 1 shown in Fig. 1 has：Chuck table 36, It keeps to machined object as described above；Laser light irradiation unit 5, it is to being maintained on the chuck table 36 Machined object irradiates laser beam, and chuck table 36 is configured to carry out attracting holding to machined object, by by above-mentioned X-axis Direction mobile unit 37 constitute processing feed mechanism and make in processing direction of feed of the machined object in fig. 4 shown in arrow X It is mobile, and make machined object by the index feed mechanism being made up of Y direction mobile unit 38 in dividing shown in arrow Y Moved in degree direction of feed.
Hereinafter, the processing method to through hole is illustrated, and in the processing method of the through hole, uses the laser shown in Fig. 1 Processing unit (plant) 1 and form the through hole of the electronic pads of the device 22 formed on the semiconductor wafer 20 for reaching shown in Fig. 4.
First, the front of semiconductor wafer 20 is loaded on the chuck table 36 of the laser processing device 1 shown in Fig. 1 Side, attracting holding is carried out on chuck table 36 to semiconductor wafer 20.Therefore, semiconductor wafer 20 is kept, is made Obtaining rear side turns into upside.
Semiconductor wafer 20 has been carried out as described above attracting holding chuck table 36 be processed feed mechanism determine Position is in the underface of shooting unit 6.When chuck table 36 to be positioned at the underface of shooting unit 6, lead in this condition The semiconductor wafer 20 that shooting unit 6 pairs is maintained on chuck table 36 is crossed to shoot, and the image such as execution pattern matching Process and be aligned operation with so that the clathrate that is formed on the semiconductor wafer 20 being maintained on chuck table 36 Spacing track 21 is disposed in the position of regulation relative to X-direction and Y direction.Now, although the formation of semiconductor wafer 20 has The front of the substrate of spacing track 21 is located at downside, but shooting unit 6 as described above by infrared illumination unit, capture infrared ray Optical system and export the composition such as capturing element (infrared C CD) of corresponding with infrared ray electric signal, therefore, it is possible to from The rear side of substrate is passed through and the spacing track 21 to forming segmentation preset lines shoots.
Will remain in the semiconductor wafer 20 on chuck table 36 and be positioned at card by implementing above-mentioned alignment operation The coordinate position of the regulation on disk workbench 36.Here, in processing method of the invention, execution position information storing step, The positional information storing step is used for all devices 22 formed on the front of the substrate of semiconductor wafer 20 in semiconductor Positional information on chip 20 together stores all electronic pads P formed on each device 221~P20Position on each device 22 Confidence ceases, and is stored in the random access memory (RAM) of the above-mentioned control unit 9 of laser processing device 1.
On above-mentioned positional information storing step, illustrate in further detail.As shown in the bottom of Fig. 4, in this embodiment party In formula, the device 22 one by one formed on semiconductor wafer 20 is endowed for determining the position on semiconductor wafer 20 Positional information, left and right directions in figure is set to X-axis, above-below direction is set to Y-axis, from the device of leftmost towards right successively It is set to X1、X2、X3..., Xn, be defined as Y successively downward from the top1、Y2、Y3…、Yn.Thus, on top enlargedly The position coordinates of part thereof of each device 22 is shown, the device 22 of upper left is defined as (X1, Y4), the device 22 of upper right is determined Justice is (X2, Y4), the device 22 of bottom right is defined as (X2, Y5), the device 22 of lower-left is defined as (X1, Y5)。
Additionally, in each device 22 of present embodiment, being formed with the edge in the state of being placed on chuck table 36 First electrode pad row L1, second electrode pad row that the direction (Y direction) vertical with processing direction of feed (X-direction) arranges L2, defines for representing each electronic pads P1~P20The positional information of the position on each device 22.More specifically, foundation is worked as (the X of device 22 of the top upper left of Fig. 41, Y4) to observe when, such as by the electronic pads P of the first electrode pad row L1 on the left of composition1 ~P10X-coordinate be defined as x1, by the electronic pads P of the second electrode pad row L2 on the right side of composition11~P20X-coordinate be defined as x2, Each electronic pads P of first electrode pad row L1, second electrode pad row L2 will be constituted1~P20Y-coordinate it is fixed downward from the top Justice is y1、y2、y3…y10.That is, (the X of device 22 of the enlarged drawing shown in the top of Fig. 41, Y4) left side first electrode pad row L1 From the upper electronic pads P for arranging downward1~P10Positional information be respectively defined as (x1, y1)、(x1, y2)、(x1, y3)…、(x1, y10), the second electrode pad row L2 on right side from the upper each electronic pads P for arranging downward11~P20Position letter Breath is respectively defined as (x2, y1)、(x2, y2)、(x2, y3)…(x2, y10).Also, for the electronic pads P of all of device 221 ~P20, its positional information is assigned by definition mode same as described above.Thus, for example 4 devices shown in the top of Fig. 4 22(X1, Y4)、(X2, Y4)、(X2, Y5)、(X1, Y5) first electrode pad row L1 the top electronic pads P1Positional information it is complete Portion is (x1, y1).Thus, it is illustrated that 4 upper lefts of device electronic pads P1Refer to " electronic pads of same position ".
As described above, in processing method of the invention, execution position information storing step, for semiconductor wafer 20 Substrate front on the above-mentioned positional information of all devices 22 for being formed on semiconductor wafer 20 together, to each device 22 On the above-mentioned positional information of all electronic padses for being formed on each device 22 stored.Then, it is maintained at chuck table Semiconductor wafer 20 on 36 is positioned at the coordinate position of the regulation on chuck table 36 by above-mentioned alignment operation, therefore The all of electronic pads on semiconductor wafer 20 required during the irradiation of laser beam is automatically determined on chuck table Coordinate position.
When alignment and execution position information storing step is implemented as described above, performed by elliptic orbit generation unit Elliptic orbit generation step.In order to clearly state the elliptic orbit generation step, with 4 devices shown in the top from Fig. 4 22(X1, Y4)、(X2, Y4)、(X2, Y5)、(X1, Y5) rise in case of implementation is laser machined and illustrate.
In processing method of the invention, using 4 devices 22 of 2 row in length and breadth adjacent two-by-two each other as a group, Laser Processing is implemented simultaneously to 4 devices 22.First, enter the processing of the chuck table 36 that remain semiconductor wafer 20 Acted to unit (X-direction mobile unit 37), index feed unit (Y direction mobile unit 38), after not existing In the state of swing effect, the deflecting action of elliptic orbit positioning unit 8 of the elliptic orbit generation unit 7 stated, make chuck work Make platform 36 be moved to assume from laser beam oscillator 51 vibrate laser beam in the case of laser beam Fig. 5 for being irradiated Point O in (a)1Shown position.In addition, point O1Positioned at (the X of each device 221, Y4)、(X2, Y4)、(X2, Y5)、(X1, Y5) in most Just it is carried out the 4 electronic pads P for being disposed in same position on each device 22 of through hole processing1(x1, y1) center.
Will point O1It is positioned at after the underface of laser light irradiation unit 5, elliptic orbit generation unit 7 is according to being deposited 4 electronic pads P of storage1Positional information and generate elliptic orbit, the elliptic orbit describe irradiated from laser beam oscillator 51 Laser beam direction of illumination pass through 4 electronic pads P1Elliptic orbit.More specifically, by making Y-axis resonant scanner 71 scanning mirror 711 makes the direction of illumination of laser beam move back and forth (reference picture 6 in the Y-axis direction so that 10kHz swings (a)), and put with the identical frequency 10kHz of Y-axis resonant scanner 71 by making the scanning mirror 721 of X-axis resonant scanner 72 Move and the direction of illumination of laser beam is moved back and forth in the X-axis direction ((b) of reference picture 6).Here, as shown in fig. 6, Y-axis Resonant scanner 71 and X-axis resonant scanner 72 are swung with so that the sine curve for swinging and describing by X-axis resonant scanner 721 Postpone pi/2 phase relative to the sine curve described by the swing of the scanning mirror 711 of Y-axis resonant scanner 71, and set Y The amplitude of the swing that the scanning mirror 711 of axle resonant scanner 71 and the scanning mirror 721 of X-axis resonant scanner 72 are carried out, with So that the direction of illumination from the laser beam of the irradiation of laser beam oscillator 51 is sat by each device 22 in same position 4 electronic pads P of target1(x1, y1) on.
Pass through 4 electronic pads P in the direction of illumination irradiated with pulse laser light1Mode generate elliptic orbit it Afterwards, 4 electronic pads P are passed through according to pulse laser light1The opportunity of the coordinate position on chuck table 36, by pulse The irradiated with pulse laser light of laser light irradiation unit 5 (pulse laser light irradiating step).More specifically, will be from laser light The repetition rate that line oscillator 51 vibrates the pulse laser light that is set as X-axis, the scanning mirror of Y-axis resonant scanner The 40kHz of 4 times of hunting frequency 10kHz, adjusts the irradiation opportunity of pulse laser light to cause relative to Y-axis resonance scanning Phase hunting period of device is π/4,3 π/4,5 π/4, the opportunity of 7 π/4 to vibrate laser beam respectively, and with electronic pads P1's Position coordinates accordingly to the back side of semiconductor wafer 20 repeatedly irradiated with pulse laser light, wears out through hole.After picture In the case of the through hole is formed as shown in the processing conditions stated, by 1 total 10 times pulse laser light at position Irradiation and form through hole, the through hole reaches the electronic pads for being formed at face side from the back side of semiconductor wafer 20.In addition, at this In implementation method, the circle for completing the position blacking of the through hole represents that unprocessed position is represented with hollow circle.
In addition, each processing conditions of above-mentioned through hole processing be set to it is as follows.
【Wafer conditions】
Spacing track is spaced：X-direction 5mm, Y direction 7mm
Electronic pads：2 row=20 10 in Y direction, in X-direction
Through hole is formed：10 subpulse laser/electronic pads
【Laser processing device condition】
The wavelength of laser beam：355nm
Average output：4W
Repetition rate：40kHz
Optically focused spot diameter：
Processing feed speed：500mm/ seconds
When through hole processing is implemented according to above-mentioned condition, the direction of illumination of pulse laser light is described with the frequency of 10kHz Elliptic orbit, during the direction of illumination of pulse laser light rounds on the elliptic orbit, vibrate 4 times with The pulse laser light of the frequency irradiation of 40kHz, with the frequency of 10kHz to 1 electronic pads P at position1Irradiated with pulse laser light Line.That is, substantially simultaneously substantially with the frequency of 10kHz to 4 electronic pads P at position1Implement through hole processing.
In the electronic pads P to above-mentioned 4 initial devices1Irradiate multiple (the being under these conditions 10 times) pulse of regulation Laser beam, completes to be directed to 4 electronic pads P1Through hole formation after, to the Y axis scanning device of elliptic orbit positioning unit 8 82 acousto-optic element (AOD) applies the voltage of regulation, and pulse laser light is adjusted relative to the deflection angle of Y direction It is whole, so as to perform elliptic orbit positioning step to cause the center O of elliptic orbit1It is moved to O2((b) of reference picture 5) and make arteries and veins The direction of illumination for rushing laser beam passes through the 4 electronic pads P2 (x that next should be processed1, y2), then, with electronic pads P1Equally Implement to be directed to 4 electronic pads P in ground2Pulse laser light irradiating step.
So, in execution pulse laser light irradiating step, elliptic orbit positioning step successively, and complete for first The electronic pads P of electronic pads row L11~P10Through hole processing after, such as Fig. 5 (c) shown in, perform elliptic orbit positioning step with So that the center of elliptic orbit is moved to O20And make pulse laser light direction of illumination pass through next should process second 4 electronic pads P of electronic pads row L220(x2, y10).Also, complete by performing above-mentioned pulse laser light irradiating step Into for 4 electronic pads P20(x2, y10) through hole processing after, to the Y axis scanning device 82 of elliptic orbit positioning unit 8 Acousto-optic element (AOD) applies the voltage of regulation, and pulse laser light is adjusted relative to the deflection angle of Y direction, by This is performed successively makes elliptic orbit to electronic pads P11Direction (top in figure) mobile elliptic orbit positioning step and pulse laser Light irradiating step, and elliptic orbit is centrally located in O as shown in (d) of Fig. 511So as to complete for the electronic pads Arrange all of electronic pads P of L211~P20Through hole processing.As described above, completing for 4 (X of device 221, Y4)、(X2, Y4)、(X2, Y5)、(X1, Y5) in all of electronic pads P1~P20Through hole processing.In addition, performing elliptic orbit positioning step While rapid and pulse laser light irradiating step, the processing carried out by X-direction mobile unit 37 is fed according to above-mentioned processing Feed speed is unceasingly carried out, and is shone with pulse laser light to tackle the semiconductor wafer 20 realized because the processing feeds The relative position change of unit 5 is penetrated, the deflection angle of X-direction is adjusted by X-axis scanner 81 so that pulse laser light On 4 electronic padses as processing object that direction of illumination is positioned on each device with following all the time.
Turn into and complete for 4 (X of device 22 when by the effect of above-mentioned processing feed unit1, Y4)、(X2, Y4)、(X2, Y5)、(X1, Y5) all of electronic pads P1~P20Through hole processing opportunity when, processing direction of feed on it is adjacent Unprocessed 4 devices 22 (X3, Y4)、(X4, Y4)、(X3, Y5)、(X3, Y5) it is moved to 4 devices 22 to machining (X1, Y4)、(X2, Y4)、(X2, Y5)、(X1, Y5) through hole processing start position.Therefore, according to unprocessed 4 devices 22 (X3, Y4)、(X4, Y4)、(X3, Y5)、(X4, Y5) the new group of setting, to the X-axis scanner 81, Y-axis of elliptic orbit positioning unit 8 Scanner 82 assigns the voltage of regulation, thus enters horizontal deflection adjustment for the direction of illumination of the laser beam in elliptic orbit, adjusts It is made into by the electronic pads P for being disposed in the same position that first electrode pad is arranged of each unprocessed device 221(x1, y1), pair set 4 unprocessed devices 22 for being set to new group perform through hole processing same as described above, for 4 new devices 22 All of electronic pads P1~P20Complete through hole processing.Also, by repeating such processing, and for processing direction of feed On all of device 22 that is arranged complete through hole processing.
After the through hole processing for all of device 22 arranged in processing direction of feed is implemented, by Y-axis Direction mobile unit 38 makes chuck table 36 be moved to index feed direction, so as to laser light irradiation unit 5 be positioned at The position that unprocessed device 22 is arranged, implements through hole same as described above and processes for new leu time.By repeating The row step, and complete to be directed to and semiconductor wafer 20 on electronic pads P on all of device 22 that is arranged1~P20It is corresponding The through hole processing of position.
In addition, sometimes as the region shown in the H in the top view of the semiconductor wafer 20 of Fig. 4, due in toroidal Semiconductor wafer 20 on efficiently arrange the relation of device 22, it is impossible to 4 adjacent two-by-two each other devices are formed as one Group.In this case, for example 3 (X of device 22 in the region as shown in positioned at the H4, Y1)、(X3, Y2)、(X4, Y2) shape Into group.And, although add implementing laser according to the identical step of the through hole processing performed by 4 above-mentioned devices 22 Work, but for (the X of device 224, Y1)、(X3, Y2) adjacent region, i.e. device shortcoming region, with not to its radiation pulses The mode of laser beam, and the effect for passing through Y axis scanning device 82 on the opportunity of the area illumination pulse laser being short of to the device Entering horizontal deflection adjustment to laser beam makes laser beam towards the damper 83 for absorbing laser beam, and stops towards concentrator 54 Laser beam irradiation.Thereby, it is possible to generally remain the process for implementing that 4 devices are implemented with through hole processing as former state.
Furthermore, it is assumed that following situation：When the number of the device 22 arranged along processing direction of feed on semiconductor wafer 20 In the case that amount is not even number, group cannot be formed by 4 devices at the top or terminal of processing direction of feed, and must be by 2 devices form group.In this case, the region being short of device by mode same as described above is every time to laser beam Direction of illumination enter horizontal deflection adjustment and make laser beam towards damper 83, and stop the photograph of the laser beam from concentrator 54 Penetrate.Group so for being formed by 2 devices, it is also possible to implement with the above-mentioned situation for forming group by 4 devices substantially Identical through hole is processed.
Above-mentioned first embodiment of the invention is made up of mode as above, therefore, it is possible to be maintained at 1 position The maximum repetition rate (for example, being 10kHz) that will not be cracked in the formation of through hole, and can be with while the side for carrying out Formula implements the through hole processing pair position irradiation laser beam corresponding with multiple electrodes pad, it is possible to increase productivity.In addition, at this In implementation method, although the repetition rate of laser beam oscillator 51 is set as into 40kHz, by elliptic orbit generation unit X-direction, the hunting frequency of Y direction are set as 10kHz, but the invention is not restricted to this, as long as will be from laser beam oscillator The 51 repetition rate M for vibrating the pulse laser light for are set to 4 multiple and make hunting frequency by elliptic orbit generation unit It is the 1/4 of repetition rate M, it becomes possible to implement that the control with present embodiment identical action effect can be realized.
Hereinafter, second embodiment of the present invention is illustrated.In addition, in this second embodiment, can use With above-mentioned first embodiment identical laser processing device 1, laser light irradiation unit 5, oval rail are based on due to only having The process of the through hole processing of road positioning unit 8 is different, therefore only difference illustrated, and is saved for remaining consistent aspect Slightly illustrate.
On the laser light irradiation step in second embodiment, implementing to same in the same manner as first embodiment The electronic pads of 4 same positions of device 22 that group is included describes elliptic orbit while irradiated with pulse laser light successively It is common in terms of the laser light irradiation step of line.But, in the present embodiment, implement with first at following aspect Mode is different：The laser light irradiation step is performed by 4 devices for constituting a group, in the irradiation of laser beam Locally to implement through hole processing in 2 devices of the 1st time, processed and laser beam through hole is locally performed Irradiation completes to be directed to this to implement through hole processing to remaining unprocessed part in other 2 device of the 2nd time it is another The through hole processing of all of electronic pads of 2 outer devices, will by implement the laser light irradiation step and with all of electricity 2 devices that polar cushion accordingly completes through hole processing are separated from the group, by 2 devices for locally carrying out through hole processing Part and adjacent unprocessed 2 devices in processing direction of feed form new group, and the elliptic orbit is positioned at newly 4 devices being included of group, the laser light irradiation step and the elliptic orbit positioning step are implemented successively.
On the laser light irradiation step in second embodiment and the elliptic orbit positioning step, implement with first Mode is same, in case of each device 22 arranged in the region amplified in the top for Fig. 4 implements through hole processing, More specifically illustrate.In addition, in the present embodiment, being assigned successively by the multiple electrodes pad being disposed in each device Numbering, is divided into the first electrode pad group of odd-numbered and the second electrode pad group of even-numbered and sets the positional information, is holding In the case that the hand-manipulating of needle is to constituting the laser light irradiation step of 4 devices of group, in laser light irradiation step In rapid, to the electrode pad set of the unprocessed any one party in the first electrode pad group and second electrode pad group of 4 devices Describe elliptic orbit while irradiated with pulse laser light, thus completes corresponding with all of electronic pads of 2 devices logical Hole machined, 2 devices that will complete the through hole processing for all of electronic pads are separated from the group, by only to the first electricity Any one party in polar cushion group and second electrode pad group carry out through hole processing 2 devices and processing direction of feed on its phase Adjacent unprocessed 2 devices form new group, and the elliptic orbit is positioned at into 4 devices that new group is included, The laser light irradiation step and the ellipse are implemented to the unprocessed electrode pad set in first electrode pad group, second electrode pad group Tracks positioned step, is sequentially completed for 2 through hole processing of device.
As shown in (a) of Fig. 7-1, in this second embodiment, initially not by 4 (X of device 221, Y4)、(X2, Y4)、(X2, Y5)、(X1, Y5) form group, but by 2 (X of device 221, Y4)、(X1, Y5) form group.In other words, as follows Locally irradiated with pulse laser light and implement through hole processing：It is considered as in (the X of device 221, Y4)、(X1, Y5) figure in left side deposit Group is formed in imaginary device 22 ', 22 ', the elliptic orbit is positioned at the (X of device 221, Y4)、(X1, Y5) electronic pads, it is real Apply for (the X of device 221, Y4)、(X1, Y5) the 1st time through hole processing.In addition, being irradiated in above-mentioned imagination in pulse laser light On the opportunity of device 22 ', 22 ', the laser beam from concentrator 54 is stopped using above-mentioned Y axis scanning device 82 and damper 83 Irradiation.
Here, through hole processing is implemented to above-mentioned " locally " to illustrate.It is first, same with the situation shown in Fig. 4, To the multiple electrodes pad that is arranged on each device 22 as P1~P20Numbering is assigned successively like that.Also, according to each numbering, collect strange Electronic pads (the P of number numbering1, P3, P5, P7, P9, P11, P13, P15, P17, P19) and be set as first electrode pad group, collect even number volume Number electronic pads (P2, P4, P6, P8, P10, P12, P14, P16, P18, P20) and be set as second electrode pad group.Also, it is not right The all of each electronic pads P arranged on each device 221~P20Sequentially form through hole, but as Fig. 7-1 (a) shown in that Sample, is only that the electronic pads of first electrode pad group carries out through hole processing successively to the electronic pads of odd-numbered.
So only to the (X of device 221, Y4)、(X1, Y5) first electrode pad group be " locally " implement through hole and add After work, imaginary device 22 ', 22 ' is separated from group according to the control program for being stored in control unit 9, by part Property implement through hole processing the (X of device 221, Y4)、(X1, Y5) and in the (X of device 221, Y4)、(X1, Y5) processing direction of feed Upper adjacent (the X of unprocessed device 222, Y4)、(X2, Y5) form new group.Then, laser light irradiation unit 5 and ellipse is made Circular orbit positioning unit 8 is acted, and further implements laser light irradiation step.Here, for (the X of device 221, Y4)、 (X1, Y5) in the first electrode pad group being made up of the electronic pads of odd-numbered, due to have been carried out through hole processing, therefore this It is secondary in 4 arbitrary devices to implementing through hole as the unprocessed second electrode pad group that is made up of the electronic pads of even-numbered Processing.By completing the processing, and complete to implement the device 22 of the through hole processing of the 2nd time as shown in (b) of Fig. 7-1 (X1, Y4)、(X1, Y5) with all of electronic pads P1~P20Corresponding through hole processing.On the other hand, on new addition group (the X of device 222, Y4)、(X2, Y5), this is the irradiation of the laser beam of the 1st time, only to being made up of the electronic pads of even-numbered Second electrode pad group irradiates laser beam, simply locally forms through hole.
When above-mentioned through hole processing is completed, (the X of device 22 of all of through hole processing will be completed1, Y4)、(X1, Y5) from Separated in the group, by (the X of device 22 that through hole processing has only been carried out to second electrode pad group2, Y4)、(X2, Y5) and process into To unprocessed 2 devices 22 (X adjacent on direction3, Y4)、(X3, Y5) form new group, perform same as described above leading to Hole machined.That is, due to by for (the X of device 222, Y4)、(X2, Y5) the 1st time through hole process to by even-numbered Electronic pads constitute second electrode pad group implement through hole processing, therefore this to be made up of the electronic pads of odd-numbered first Electrode pad set implements through hole processing.By completing the processing, and the through hole as the 2nd time is completed as shown in (c) of Fig. 7-2 (the X of device 22 of processing2, Y4)、(X2, Y5) with all of electronic pads P1~P20Corresponding processing.In addition, can be by successively Repeat such processing and implement the through hole processing to the device 22 arranged in processing direction of feed, but complete to most In the case that the through hole of 2 devices 22 being grouped afterwards is processed, due in the absence of adjacent unprocessed device, therefore with it is initial It is assumed that imaginary device 22 ', 22 ' and to 2 (X of device 22 as processing object1, Y4)、(X1, Y5) situation about being processed is same Sample, group is formed so as to implement through hole processing in the way of dreaming up imaginary device 22 ', 22 ' and position elliptic orbit.Thus, Can complete processing direction of feed on arranged all of device 22 through hole processing.
According to above-mentioned second embodiment, due to carrying out that 4 through holes of device are processed while being sequentially completed to 2 The through hole processing of individual device, therefore compared with complete to 4 first embodiments of the through hole processing of device simultaneously, to follow The mode that the semiconductor wafer 20 of feeding is processed along X-direction enters horizontal deflection tune to laser beam using X-axis scanner 81 Whole deflection angle is smaller, and laser beam can be made to be converged in allowed band relative to the incidence angle of chip and implement suitable When processing.
In addition, in above-mentioned second embodiment, as the irradiation to laser beam for 2 devices of the 1st time are " local Property " implement the method that through hole is processed, through hole processing is implemented using the electronic pads for being divided into odd-numbered or even-numbered Method, but the method not limited to this that " locally " implementation through hole is processed.For example, if instead of pin in above-mentioned second embodiment Electronic pads to odd-numbered implements the mode of through hole processing, to electronic pads P1~P5、P11~P15Carry out through hole processing, again to surplus Remaining electronic pads P6~P10、P16~P20Through hole processing is carried out, identical action effect can be realized.Also, in the second embodiment party In formula, the example for making 20 electronic padses that 2 row are arranged in as L1, L2 is pointed out, but the configuration of electronic pads is also not necessarily limited to this. In the presence of the situation that 1 row electronic pads is only arranged to device, it is also contemplated that go out in a row to be 2 etc. various in 10, another row Configuration, even the arrangement pattern of such electronic pads, it is also possible to electronic pads is divided into 2 by as second embodiment Individual group and locally implement through hole processing.
Additionally, in the case of through hole processing is accordingly implemented with an electronic pads under above-mentioned laser processing condition, Due to adjust its output etc. with cause irradiation 10 subpulse laser beams and complete through hole process, therefore, it is possible to replace as second reality Apply mode to be divided into odd-numbered and even-numbered like that and implement the mode of through hole processing and use following processing：It is right to be defined to 5 irradiations of laser beam are only performed successively in 1 all of electronic pads of the 4 of group devices is constituted.Accordingly, for conduct 2 devices of the irradiation of the laser beam of the 1st time, are only locally processed for each electronic pads.Also, for having entered Other 2 device of irradiation of laser beam of 5 times of having gone irradiates the laser beam of the 2nd time, so as to complete for this in addition 2 devices all of electronic pads through hole processing.Thereby, it is possible to same with above-mentioned second embodiment, it is sequentially completed Through holes processing to 2 devices, can obtain with effect identical action effect resulting in above-mentioned second embodiment, and And the illuminating method of the laser beam of the 1st time and the 2nd time need not be changed, can simplify processing unit (plant).So, " locality The mode that through hole processing is implemented on ground " can use various modifications example.
Also, in the above-described embodiment, will be stored in each device in the chip of control unit positional information and The positional information of multiple electrodes pad formed in each device in each device is recited as the " (X of device 221, Y4)、(X1, Y5) " or Person " P1~P10(x1, y1)、(x1, y2)、(x1, y3)…、(x1, y10) " etc., but institute's shape in the positional information of each device and each device Into positional information of the multiple electrodes pad in each device form not limited to this.The positional information of each device is in chip On group or the device isolation that will be machined and the information for carrying out through hole processing are formed by selected device, as long as The information can be used in difference and mutually constitute group by the device of which position on chip or which is isolated from group Device, it would however also be possible to employ arbitrary form.Also, positional information of the multiple electrodes pad formed in each device in each device Form also as described above, as long as position that can be by the electronic pads in each device is different from the position of other electronic padses Put, it would however also be possible to employ arbitrary form.

Claims (8)

1. a kind of processing method of chip, multiple devices are divided by segmentation preset lines and are formed on the front of the chip, wherein, The processing method of the chip has the steps：
Positional information storing step, with positional information of each device in the chip together, to the multiple formed on each device Positional information of the electronic pads in each device is stored；
Elliptic orbit generation step, 4 adjacent two-by-two each other devices are generated by each device as a group It is disposed in the elliptic orbit comprising circle of 4 electronic padses of same position；
Laser light irradiation step, describes the elliptic orbit while utilizing pulse laser light illumination unit pair with this 4 The corresponding position irradiated with pulse laser light of electronic pads；And
Elliptic orbit positioning step, the elliptic orbit is positioned such that the elliptic orbit by with next should process The corresponding position of 4 electronic padses,
In the processing method of the chip, while the chip and pulse laser light illumination unit are relatively processed into Give, implement the laser light irradiation step and the elliptic orbit positioning step successively on one side and implement through hole processing to the chip, The through hole is processed for forming through hole corresponding with the electronic pads.
2. the processing method of chip according to claim 1, wherein,
In the laser light irradiation step, being oriented in the elliptic orbit will by implementation in the state of 4 electronic padses Multiple pulse laser light are irradiated to the through hole processing of position corresponding with 4 electronic padses.
3. the processing method of chip according to claim 1 and 2, wherein,
The laser light irradiation step is performed by 4 devices for constituting a group, is the 1st in the irradiation of laser beam Locally implement through hole processing in 2 secondary devices, processed and the photograph of laser beam through hole is locally performed Penetrate in other 2 device for the 2nd time and through hole processing is implemented to remaining unprocessed part, thus complete for this in addition 2 devices all of electronic pads through hole processing,
By implementing the laser light irradiation step 2 devices that through hole is processed will be accordingly completed with all of electronic pads Separated from the group, by locally carried out through hole processing 2 devices and in processing direction of feed it is adjacent not plus 2 devices of work form new group, and the elliptic orbit is positioned at into 4 devices that new group is included, and implement successively The laser light irradiation step and the elliptic orbit positioning step.
4. the processing method of chip according to claim 3, wherein,
By to the multiple electrodes pad for being disposed in each device assign successively numbering and be divided into odd-numbered first electrode pad group and The second electrode pad group of even-numbered and set the positional information,
In the laser light irradiation step, in the first electrode pad group and second electrode pad group of 4 devices not The electrode pad set of any one party of processing, describes elliptic orbit while irradiated with pulse laser light, thus completes and 2 devices The corresponding through hole processing of all of electronic pads of part, and will complete to 2 devices of the through hole processing of all of electronic pads from Separated in the group, by 2 that through hole processing has only been carried out to any one party in first electrode pad group and second electrode pad group Device and adjacent unprocessed 2 devices in processing direction of feed form new group, and the elliptic orbit is positioned at newly 4 devices being included of group, this is implemented to the unprocessed electrode pad set in first electrode pad group, second electrode pad group and is swashed Light light irradiating step and the elliptic orbit positioning step, are sequentially completed to 2 through hole processing of device.
5. the processing method of the chip described in any one in Claims 1-4, wherein,
In the periphery of the chip, cannot be by 4 adjacent two-by-two each other device junctions into the case of group, by less than 4 Device junction stops the irradiation of the laser beam in the region being short of device into group.
6. a kind of processing unit (plant), consists of and includes：
Holding unit, it is kept in the plane specified by X-axis, Y-axis to chip, and multiple devices are divided by segmentation preset lines And be formed on the front of the chip；And
Laser light irradiation unit, it implements processing to the wafer illumination laser beam being maintained on the holding unit,
Wherein, the processing unit (plant) has：
Positional information storage unit, its positional information with each device in the chip is together, more to what is formed on each device The positional information of individual electronic pads is stored；
Elliptic orbit generation unit, its using 4 adjacent two-by-two each other devices as a group according to the position of the electronic pads Confidence breath generates the elliptic orbit comprising circle of 4 electronic padses by being disposed in same position；
Elliptic orbit positioning unit, the elliptic orbit is positioned at position corresponding with 4 electronic padses that should be processed by it；With And
Laser light irradiation unit, it describes the elliptic orbit while pair position irradiation arteries and veins corresponding with 4 electronic padses Rush laser beam,
The processing unit (plant) is while be relatively processed feeding to chip and pulse laser light while making the laser light irradiation Unit and the elliptic orbit positioning unit are acted and are formed through hole.
7. processing unit (plant) according to claim 6, wherein,
The laser light irradiation unit is included：
Oscillator, it vibrates pulse laser light with the repetition rate M of 4 multiple；And
Concentrator, it oscillator is vibrated the pulse laser light for and is condensed on the chip that the holding unit is kept,
The elliptic orbit generation unit is disposed between the oscillator and the concentrator, is swept by X-axis resonant scanner and Y-axis resonance Device composition is retouched, the X-axis resonant scanner makes the direction of illumination of laser beam in X-axis side with the 1/4 of repetition rate M repetition rate It is swung up, the Y-axis resonant scanner makes the direction of illumination of laser beam in Y-axis side with the 1/4 of repetition rate M repetition rate It is swung up, the elliptic orbit generation unit generates the elliptic orbit to each electronic pads dispense-pulse laser beam, each electrode The positional information of pad is stored in the positional information storage unit,
The elliptic orbit positioning unit is made up of X-axis scanner and Y axis scanning device, and the X-axis scanner generates the elliptic orbit The elliptic orbit that unit is generated is moved in the X-axis direction, and the Y axis scanning device makes the elliptic orbit move in the Y-axis direction, should Elliptic orbit positioning unit is according to the positional information of the electronic pads for being stored in the positional information storage unit and by the elliptic orbit It is positioned to by 4 electronic padses of processing object.
8. processing unit (plant) according to claim 7, wherein,
The sinusoidal phase that the X-axis resonant scanner is generated is bent relative to the sine that the Y-axis resonant scanner is generated The phase offset pi/2 of line.
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