CN103658976B - Laser processing device - Google Patents
Laser processing device Download PDFInfo
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- CN103658976B CN103658976B CN201310360764.7A CN201310360764A CN103658976B CN 103658976 B CN103658976 B CN 103658976B CN 201310360764 A CN201310360764 A CN 201310360764A CN 103658976 B CN103658976 B CN 103658976B
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- 229910052594 sapphire Inorganic materials 0.000 description 12
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- 229910009372 YVO4 Inorganic materials 0.000 description 4
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- 230000035699 permeability Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
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- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 235000013290 Sagittaria latifolia Nutrition 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0869—Devices involving movement of the laser head in at least one axial direction
- B23K26/0876—Devices involving movement of the laser head in at least one axial direction in at least two axial directions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0626—Energy control of the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
Abstract
The present invention provides laser processing device, and it has laser light irradiation component, and laser light irradiation component has: the laser beam agitator of the laser beam that vibrates;Output adjusts component, and it adjusts laser beam agitator and vibrates the output of the laser beam;Condenser, it makes to be adjusted the laser beam convergence after component adjusts, the machined object irradiating laser light being kept this chuck table by output;1/2 wavelength plate, it is disposed in output and adjusts between component and condenser;The angle of polarization adjusts component, and it adjusts the angle of polarization of the laser beam by 1/2 wavelength plate;And control member, it controls the angle of polarization and adjusts component, condenser has birefringent lens and collecting objective, control member controls the angle of polarization and adjusts component, adjust the angle of polarization by the laser beam of 1/2 wavelength plate, will suitably be changed to the mode of two and the mode of via birefringent lens the focus of laser beam assembled by collecting objective.
Description
Technical field
The present invention relates to irradiate and relative to machined objects such as semiconductor wafers, there is the laser beam of permeability and added
The laser processing device being internally formed modification layer of work thing.
Background technology
In semiconductor device manufacturing process, it is arranged as by the surface of the semiconductor wafer as substantially circular plate shape
The cancellate segmentation preset lines being referred to as spacing track divides multiple regions, forms IC, LSI on the region of this division
Deng device.Then, cut off semiconductor wafer by segmentation along spacing track and form respectively the region of device, manufacture
Go out semiconductor chip one by one.Additionally, on the surface of sapphire substrate the stacking photo detectors such as photodiode and
The light-emitting components such as laser diode etc. and the optical device wafer that obtains is divided into one also by cutting off along spacing track
The optical devices such as individual photodiode, laser diode, these optical devices are widely used in electrical equipment.
As the method for the tabular machined objects such as dividing semiconductor wafer, have also been attempted following laser processing: use
There is relative to this machined object the pulse laser light of permeability, focus be directed at the inside in region to be split,
Irradiated with pulse laser light.Use the dividing method of this laser processing from the side, face of a side of machined object by optically focused
The internal pulse laser light irradiating the wavelength relative to machined object with permeability of some alignment, at machined object
Inside is continuously formed modification layer along spacing track, and the spacing track reduced owing to forming this modification layer along intensity applies
External force, thus splits machined object.(for example, referring to patent documentation 1.)
But, in order to wafer is applied external force so that it is the most disrumpent feelings along spacing track, need to increase the thickness of modification layer
Degree, i.e. modification layer size on wafer thickness direction.Additionally, the Mohs' hardness of the wafer formed by sapphire substrate
Higher, it is therefore desirable to form the modification layer of multilamellar along spacing track.The modification formed by above-mentioned laser processing
The thickness of layer is 10~50 μm near the focus of pulse laser light, therefore to increase the thickness of modification layer,
Need the position making the focus of pulse laser light at the thickness direction top offset of wafer, and make pulse laser light and
Wafer the most relatively moves along spacing track.Therefore, in the case of particularly the thickness of wafer is thicker, for essence
Thickly make wafer disrumpent feelings, need to be formed for a long time the modification layer of required thickness.
In order to solve the problems referred to above, following Patent Document 2 discloses can form two focuss up and down and simultaneously
Form the laser processing device of two-layer modification layer.
Patent documentation 1: No. 3408805 publications of Japanese Patent No.
Patent documentation 2: Japanese Unexamined Patent Publication 2006-95529 publication
But, in the laser processing device disclosed in above-mentioned patent documentation 2, it is multiple at modification layer to be formed
In the case of be no problem, but focus is too much in the case of the modification layer forming odd number, and too much focus exists
The upper surface of wafer causes ablation, exists and causes the such problem of Quality Down.
Summary of the invention
The present invention completes the most in view of the above fact, and its main technical task is to provide a kind of laser processing device
Putting, this laser processing device is configured to, it is possible to forming the mode of two focuss up and down and forming 1 focus
Mode select.
In order to solve above-mentioned main technical task, according to the present invention, it is provided that a kind of laser processing device, it has:
Chuck table, it keeps machined object;Laser light irradiation component, the machined object that this chuck table is kept by it irradiates
Laser beam;And processing feeding component, this chuck table and this laser light irradiation component are relatively processed by it
Feeding, this laser processing device is characterised by,
This laser light irradiation component has: laser beam agitator, its laser beam that vibrates;Output adjusts component,
It adjusts this laser beam agitator and vibrates the output of the laser beam;Condenser, it makes to be adjusted component by this output
Laser beam after adjustment is assembled, the machined object irradiating laser light being kept this chuck table;1/2 wavelength plate,
It is disposed in this output and adjusts between component and this condenser;The angle of polarization adjusts component, and it adjusts by this 1/2 wavelength
The angle of polarization of the laser beam of plate;And control member, its control this angle of polarization adjust component,
This condenser has birefringent lens and collecting objective,
In order to avoid too much focus causes ablation at the upper surface of machined object, this control member controls this angle of polarization
Adjusting component, adjustment, will be via this birefringent lens and by this by the angle of polarization of the laser beam of this 1/2 wavelength plate
The focus of laser beam that collecting objective is assembled suitably is changed to the mode of two and the mode of.
Above-mentioned control member adjusts component to this output and is controlled so that controls the angle of polarization in the first way and adjusts component
Time the laser beam entering into birefringent lens be output in a second manner control the angle of polarization adjust component time
The 1/2 of the output of laser beam, wherein, this first method is to make via birefringent lens and assembled by collecting objective
The focus of laser beam becomes the mode of, and this second method is for making via birefringent lens and by collecting objective meeting
The focus of poly-laser beam becomes the mode of two.
In the laser processing device of the present invention, laser light irradiation component has: the laser light of the laser beam that vibrates
Line oscillator;Output adjusts component, and it adjusts the output of the laser beam that laser beam agitator vibrates;Condenser,
Laser beam after being adjusted component adjustment by output is assembled by it, and the machined object being kept chuck table irradiates and swashs
Light light;1/2 wavelength plate, it is disposed in output and adjusts between component and condenser;The angle of polarization adjusts component, and it is adjusted
The angle of polarization of the whole laser beam by 1/2 wavelength plate;And control member, it controls the angle of polarization and adjusts component, is somebody's turn to do
Condenser has birefringent lens and collecting objective, and control member controls the angle of polarization and adjusts component, adjusts by 1/2 ripple
The angle of polarization of the laser beam of long slab, by via birefringent lens the focus of laser beam assembled by collecting objective
The suitable mode becoming two and the mode of, therefore in the case of modification layer to be formed is even number, will be via double
Refractor the focus of laser beam assembled by collecting objective are set to the mode of two and implement, and are treating shape
In the case of the modification layer become is odd number, by via birefringent lens the optically focused of laser beam assembled by collecting objective
Point is set to the mode of, it is possible to carry out correspondence by least implementing 1 time.
Accompanying drawing explanation
Fig. 1 is the axonometric chart of the laser processing device constituted according to the present invention.
Fig. 2 is the mount structure figure of the laser light irradiation component installed in the laser processing device shown in Fig. 1.
Fig. 3 is to illustrate the birefringent lens via the laser light irradiation component shown in pie graph 2 and by collecting objective meeting
The explanatory diagram of the mode of the focus of poly-laser beam.
Fig. 4 is the mount structure figure of the control member installed in the laser processing device shown in Fig. 1.
Fig. 5 is axonometric chart and the enlarged view of a portion of the optical device wafer as machined object.
Fig. 6 is the guard block adhering processes being shown on the surface of the optical device wafer shown in Fig. 5 and pasting protection band
Explanatory diagram.
Fig. 7 is the explanatory diagram of the 1st modification layer formation process that laser processing device as shown in Figure 1 is implemented.
Fig. 8 is the explanatory diagram of the 2nd modification layer formation process that laser processing device as shown in Figure 1 is implemented.
Label declaration
2: static base station
3: chuck table mechanism
36: chuck table
37: processing feeding component
374: processing amount of feeding detection means
38: the 1 index feed components
4: laser light irradiation unit supporting mechanism
42: moveable support base station
43: the 2 index feed components
5: laser light irradiation unit
53: focus position adjustment means
6: laser light irradiation component
62: pulsed laser light line oscillator
63: output adjusts component
64: condenser
641: direction conversion mirror
642: birefringent lens
643: collecting objective
65:1/2 wavelength plate
66: the angle of polarization adjusts component
8: control member
10: optical device wafer
Detailed description of the invention
Hereinafter, in detail the preferred implementation of the laser processing device constituted according to the present invention is said referring to the drawings
Bright.
The axonometric chart of the laser processing device constituted according to the present invention shown in Fig. 1.Laser processing device shown in Fig. 1
Have: static base station 2;Chuck table mechanism 3, it is provided on this static base station 2, it is possible to shown by arrow X
Move in the processing direction of feed gone out, and keep machined object;Laser light irradiation unit supporting mechanism 4, its quilt
Be disposed on static base station 2, it is possible to by the direction shown in above-mentioned arrow X at a right angle by shown in arrow Y
Move in index direction;And laser light irradiation unit 5, it is provided in this laser light irradiation unit supports machine
On structure 4, it is possible to moved by the focal position adjustment direction shown in arrow Z.
Above-mentioned chuck table mechanism 3 has: arrange abreast along by the direction shown in arrow X on static base station 2
Pair of guide rails 31,31;1st sliding shoe 32, it is disposed on this guide rail 31,31, it is possible to by arrow X
The side illustrated moves up;2nd sliding shoe 33, it is provided on the 1st sliding shoe 32, it is possible to by arrow
Side shown in Y moves up;Supporting platform 35, it is supported by cylinder part 34 on the 2nd sliding shoe 33;With
And the chuck table 36 as processed article holding component.This chuck table 36 is formed by porous material, has processed
Thing keeps face 361, and in chuck table 36, the wafer as machined object is kept by not shown attracting member.Additionally,
Chuck table 36 is rotated by the not shown pulse motor that is disposed in cylinder part 34.
It is directed that above-mentioned 1st sliding shoe 32 is provided with a pair chimeric with above-mentioned pair of guide rails 31,31 at its lower surface
Groove 321,321, and above-mentioned 1st sliding shoe 32 surface configuration thereon has and puts down along by the direction shown in arrow Y
The pair of guide rails 322,322 formed capablely.So constitute the 1st sliding shoe 32 be configured to, by directed groove 321,
321 is chimeric with pair of guide rails 31,31, it is possible to is moving along pair of guide rails 31,31 by the direction shown in arrow X
Dynamic.Chuck table mechanism 3 in embodiment illustrated has makes the 1st sliding shoe 32 along pair of guide rails 31,31
At the processing feeding component 37 moved up by the side shown in arrow X.Processing feeding component 37 includes above-mentioned one
To the external screw thread screw mandrel 371 arranged abreast between guide rail 31 and 31, and it is used for driving this external screw thread screw mandrel 371
Pulse motor 372 grade rotated drives source.One end of external screw thread screw mandrel 371 is rotatably supported on and is fixed in
In the drive tab 373 of above-mentioned static base station 2, its other end links with the output shaft transmission of above-mentioned pulse motor 372.
It addition, external screw thread screw mandrel 371 be formed at not scheming that the central part lower surface of the 1st sliding shoe 32 is protrusively provided
The through internal thread hole of the female thread block shown screws togather.Therefore, by being driven external screw thread screw mandrel by pulse motor 372
371 rotate and reverse, and make the 1st sliding shoe 32 along guide rail 31,31 by the processing direction of feed shown in arrow X
Upper movement.
Above-mentioned 2nd sliding shoe 33 is provided with at its lower surface and is arranged at the one of the upper surface of above-mentioned 1st sliding shoe 32
The a pair directed groove 331,331 chimeric to guide rail 322,322, the 2nd sliding shoe 33 be configured to by make by
Guiding groove 331,331 is chimeric with pair of guide rails 322,322, it is possible to moved up by the side shown in arrow Y.
Chuck table mechanism 3 in embodiment illustrated has for making the 2nd sliding shoe 33 along being located at the 1st sliding shoe 32
Pair of guide rails 322,322 at the 1st index feed component 38 moved up by the side shown in arrow Y.1st point
Degree feeding component 38 includes the external screw thread screw mandrel 381 arranged abreast between above-mentioned pair of guide rails 322 and 322,
And the pulse motor 382 etc. for driving this external screw thread screw mandrel 381 to rotate drives source.External screw thread screw mandrel 381
One end be rotatably supported in the drive tab 383 of the upper surface being fixed in above-mentioned 1st sliding shoe 32, its
The other end links with the output shaft transmission of above-mentioned pulse motor 382.It addition, external screw thread screw mandrel 381 be formed at
Through internal thread hole spiral shell in the not shown female thread block that the central part lower surface of the 2nd sliding shoe 33 is protrusively provided
Close.Therefore, by being driven external screw thread screw mandrel 381 to rotate and reverse by pulse motor 382, the 2nd sliding shoe is made
33 are being moved up along guide rail 322,322 by the index feed side shown in arrow Y.
Above-mentioned laser light irradiation unit supporting mechanism 4 has on static base station 2 along by the side shown in arrow Y
To the pair of guide rails 41,41 arranged abreast, and by can be in the way of being moved up by the side shown in arrow Y
It is disposed in the moveable support base station 42 on this guide rail 41,41.This moveable support base station 42 is by guide rail 41,41
The mobile supporting part 421 that arranges movably and be installed on this installation portion 422 moving on supporting part 421 and constitute.Peace
Dress portion 422 is provided with by the upwardly extending pair of guide rails in side 423,423 shown in arrow Z at one side.Diagram
Embodiment in laser light irradiation unit supporting mechanism 4 have for making moveable support base station 42 along a pair
Guide rail 41,41 is at the 2nd index feed component 43 moved up by the side shown in arrow Y.2nd index feed structure
Part 43 includes the external screw thread screw mandrel 431 arranged abreast between above-mentioned pair of guide rails 41,41, and is used for driving
Pulse motor 432 grade that this external screw thread screw mandrel 431 dynamic rotates drives source.One end of external screw thread screw mandrel 431 rotates from
As be supported in the not shown drive tab being fixed in above-mentioned static base station 2, its other end and above-mentioned pulse electric
The output shaft transmission of machine 432 links.It addition, external screw thread screw mandrel 431 and the interior spiral shell being formed at not shown female thread block
Pit screws togather, and this female thread block is protrusively provided in the central authorities of the mobile supporting part 421 constituting moveable support base station 42
Lower surface.Therefore, by being driven external screw thread screw mandrel 431 to rotate and reverse by pulse motor 432, make movable
Support group platform 42 is being moved up along guide rail 41,41 by the index feed side shown in arrow Y.
Laser light irradiation unit 5 in embodiment illustrated has unit frame 51 and is installed on this unit frame 51
On laser light irradiation component 6.Unit frame 51 is provided with and is located at the pair of guide rails of above-mentioned installation portion 422
423,423 a pair chimeric slidably directed groove 511,511, by by this directed groove 511,511 with upper
State guide rail 423,423 to be fitted together to, be movably supported by the direction shown in arrow Z.
Laser light irradiation unit 5 in embodiment illustrated has for making unit frame 51 along pair of guide rails
423,423 in the focus position adjustment means 53 moved up by the side shown in arrow Z.Focus position adjustment
Component 53 includes the external screw thread screw mandrel (not shown) being disposed between pair of guide rails 423,423, and is used for driving
Pulse motor 532 grade that this external screw thread screw mandrel dynamic rotates drives source, by being driven not shown by pulse motor 532
External screw thread screw mandrel rotate forward or reversion, make unit frame 51 and laser light irradiation component 6 along pair of guide rails 423,
423 are being moved up by the side shown in arrow Z.It addition, in the illustrated embodiment, electronic by driving pulse
Machine 532 just then makes laser light irradiation component 6 be moved upward, and is inverted by driving pulse motor 532 and makes
Laser light irradiation component 6 moves downwards.
Laser light irradiation component 6 in embodiment illustrated includes and is fixed on said units frame 51 and real
The shell 61 of drum horizontal-extending in matter.With reference to Fig. 2, laser light irradiation component 6 is illustrated.
Laser light irradiation component 6 shown in Fig. 2 includes: the pulse laser light vibration being disposed in shell 61
Device 62;The output tune that the output of the pulse laser light gone out of vibrating this pulsed laser light line oscillator 62 is adjusted
Whole component 63;And condenser 64, it adjusts the pulse laser light after component 63 have adjusted output to by this output
Assemble, be irradiated on the machined object W that chuck table 36 is kept.Pulsed laser light line oscillator 62 vibrates
Go out the pulse laser light LB of the wavelength (such as 1064nm) relative to machined object with permeability.
Constitute the condenser 64 of laser light irradiation component 6 by direction conversion mirror 641, be disposed in and turned by the direction
Change mirror 641 by the birefringent lens 642 on the optical axis of the pulse laser light of conversion direction and collecting objective 643 structure
Become, wherein, direction conversion mirror 641 being vibrated by pulsed laser light line oscillator 62 pulse laser light court
Lower section i.e. chuck table 36 conversion direction in Fig. 2.Birefringent lens 642 is by LASF35 vitreous body 642a and YVO4
Crystalline solid 642b is constituted, and will be separated into ordinary light and different by the pulse laser light of direction conversion mirror 641 conversion direction
Ordinary light.Collecting objective 643 makes the ordinary light after being separated by birefringent lens 642 and abnormal light assemble respectively.
Proceed explanation with reference to Fig. 2, it is illustrated that embodiment in laser light irradiation component 6 have and be disposed in
State output and adjust 1/2 wavelength plate 65 between component 63 and condenser 64, and to by this 1/2 wavelength plate 65
The angle of polarization that is adjusted of the angle of polarization of pulse laser light LB adjust component 66.1/2 wavelength plate 65 can pass through
Rotatory polarization face changes the angle of incidence of the pulse laser light LB optic axis relative to YVO4 crystalline solid 642b.
By the angle of incidence of the pulse laser light LB optic axis relative to YVO4 crystalline solid 642b is set to 45 degree, energy
Enough ratios by the ordinary light LBl separated by birefringent lens 642 and abnormal light LB2 are set to 50%.Additionally,
By the angle of incidence of the pulse laser light LB optic axis relative to YVO4 crystalline solid 642b is set to 90 degree, energy
The ordinary light LBl separated by birefringent lens 642 is enough set to 100%, and abnormal light LB2 is set to 0%.It addition,
In the illustrated embodiment, 1/2 wavelength plate 65 is installed on the rotating frame 650 of periphery formation gear.
In the illustrated embodiment, the above-mentioned angle of polarization adjusts component 66 and by pulse motor 661 and drives gear 662
Constitute, by making pulse motor 661 action make 1/2 wavelength plate 65 rotate centered by optical axis, wherein, should
Gear 662 is driven to be installed in the drive shaft of this pulse motor 661, with the periphery being formed at above-mentioned rotation 650
Gear engagement.Component 66 action is adjusted, by separated by birefringent lens 642 when making the angle of polarization so constituted
When the ratio of ordinary light LBl and abnormal light LB2 is set to 50%, as shown in (a) of Fig. 3, birefringent lens
642 do not make it reflect for ordinary light LBl and directly pass through, for abnormal light LB2 by YYO4 crystalline solid 642b
And make it reflect laterally.As a result of which it is, collecting lens 643 makes ordinary light LBl and abnormal light LB2 assemble, from
And two focus Pa, Pb meetings after the thickness direction top offset of the machined object W kept in chuck table 36
Poly-.On the other hand, when making the angle of polarization adjust component 66 action, the ordinary light LBl that will be separated by birefringent lens 642
Be set to 100%, abnormal light LB2 is when being set to 0%, and as shown in (b) of Fig. 3, birefringent lens 642 only makes ordinary
Light LBl directly passes through, and therefore collecting lens 643 only makes ordinary light LBl assemble, and is kept in chuck table 36
Machined object W focus Pa assemble.
Return Fig. 1 goes on to say, and arranges on the leading section of shell 61 constituting above-mentioned laser light irradiation component 6
Having imaging member 7, the detection of this imaging member 7 was treated by adding that above-mentioned laser light irradiation component 6 carries out laser machining
Territory, work area.In the illustrated embodiment, this imaging member 7 common is taken the photograph except carry out imaging by luminous ray
Beyond element (CCD), also by machined object irradiate ultrared infrared illumination component, catch infrared by this
Ultrared optical system that line illuminating member irradiates, the output electricity corresponding with the infrared ray captured by this optical system
The imaging apparatuss (infrared C CD) of signal etc. are constituted, and picture signal shooting obtained is sent to not shown control
Component processed.
Laser processing device in embodiment illustrated has the control member 8 shown in Fig. 4.Control member 8 is by counting
Calculate mechanism to become, have and carry out the central processor (CPU) 81 of calculation process, storage control journey according to control program
The read-write random access memory (RAM) of the read only memory (ROM) 82 of sequence etc., storage operation result etc.
83, input interface 84 and output interface 85.The input interface 84 of control member 8 is enter to from imaging structure
The detection signal of part 7 and input link 80 etc..Then, from the output interface 85 of control member 8 to above-mentioned pulse electricity
Motivation 372, pulse motor 382, pulse motor 432, pulse motor 532, pulsed laser light line oscillator
62, output adjusts component 63, the angle of polarization adjusts the output control signals such as component 66.
Laser processing device in embodiment illustrated is constituted as described above, illustrates its effect below.
(a) and (b) of Fig. 5 shows as the machined object being processed by above-mentioned laser processing device i.e. crystalline substance
The axonometric chart of the optical device wafer of sheet and to wanting portion to be amplified the sectional view represented.Shown in (a) and (b) of Fig. 5
Optical device wafer 10 in, the surface 100a of the sapphire substrate 100 that such as thickness is 150 μm is laminated with
Being made up of n-type nitride semiconductor layer 111 and p-type nitride semiconductor layer 112 of the thickness of such as 10 μm
Optical device layer (epitaxial layer) 110.And, optical device layer (epitaxial layer) 110 is by being formed as cancellate multiple
It is formed with the optical device such as light emitting diode, laser diode 130 on multiple regions that spacing track 120 divides.Below,
Illustrate forming 3 layers of method modifying layers in the inside of this optical device wafer 10 along spacing track 120.It addition,
In the case of forming 3 layers of modification layer, input link 80 inputting, to control member 8, the modification layer formed is 3 layers
Situation.
First, in order to protect the light formed on the surface 100a of sapphire substrate 100 constituting optical device wafer 10
Device 130, is implemented in constituting on the surface 110a of the optical device layer (epitaxial layer) 110 of optical device wafer 10 and pastes
The guard block adhering processes of guard block.I.e., as shown in Figure 6, in the optical device layer constituting optical device wafer 10
The protection band T as guard block is pasted on the surface 110a of (epitaxial layer) 110.It addition, the embodiment party of diagram
In formula, protection band T is to be on the surface of the sheet material being made up of polrvinyl chloride (PVC) of 100 μm at thickness
The paste of the acrylic resin of coating thickness 5 μm.
After implementing above-mentioned guard block adhering processes, in the chuck table 36 of the laser processing device shown in Fig. 1
The protection band T side of upper mounting optical device wafer 10, in this chuck table 36, absorption keeps optical device wafer 10 (brilliant
Sheet keeps operation).Therefore, the optical device wafer 10 kept in chuck table 36, the back of the body of sapphire substrate 100
Face 100b becomes upside.
As it has been described above, the chuck table 36 of optical device wafer 10 attracting holding is positioned at by processing feeding component 37
The underface of imaging member 7.When the underface making chuck table 36 be positioned at imaging member 7, perform by shooting structure
Part 7 and not shown control member detect the alignment operation of the machining area to be laser machined of optical device wafer 10.
That is, imaging member 7 and not shown control member performs the image procossing such as pattern match, to carry out at optical device wafer
The spacing track 120 that the predetermined party of 10 is upwardly formed and the laser light irradiation along spacing track 120 irradiating laser light
The alignment of the condenser 64 of component 6, completes the alignment of laser light irradiation position.Additionally, also to being formed at light device
Part wafer 10 similarly complete laser at the upwardly extending spacing track in side 120 orthogonal relative to above-mentioned predetermined direction
The alignment of light irradiation position.Now, although the 110a position, surface being formed with spacing track 120 of optical device wafer 10
In downside, but as it has been described above, imaging member 7 has by infrared illumination component, catches ultrared optical system
And the imaging member that the imaging apparatus (infrared C CD) etc. exporting the signal of telecommunication corresponding with infrared ray is constituted, because of
This, it is possible to spacing track 120 is taken the photograph by the back side 100b through the sapphire substrate 100 constituting optical device wafer 10
Picture.It addition, the sapphire wafer constituting optical device wafer 10 makes visible light-transmissive, therefore it is not necessary to use infrared
Line CCD.
As described above, the spacing track 120 that the optical device wafer 10 kept in detection chuck table 36 is formed,
After having carried out the alignment of laser light irradiation position, as shown in (a) of Fig. 7, chuck table 36 is moved to laser light
Line irradiates the laser light irradiation region residing for condenser 64 of component 6, makes predetermined spacing track 120 be positioned at optically focused
The underface of device 64.It addition, control member 8 makes the angle of polarization adjust component 66 carries out action, will be by birefringent lens
The ratio of the 642 ordinary light LBl separated and abnormal light LB2 is set to 50%.Then, make to shine from condenser 64
Focus Pa, the Pb of the pulse laser light penetrated is positioned at the inside of the sapphire substrate 100 constituting optical device wafer 10.
Then, laser light irradiation component 6 is made to carry out action, from condenser 64 irradiated with pulse laser light, and
Make processing feeding component 37 carry out action, make chuck table 36 with predetermined processing feed speed in (a) of Fig. 7
(the 1st metamorphic layer formation process) is moved up by the side shown in arrow X1.Then, as shown in (b) of Fig. 7,
After the other end (being right-hand member in (b) of Fig. 7) in the road, irradiation position arrival interval 120 of condenser 64, stop
The irradiation of pulse laser light, and stop the movement of chuck table 36.As a result of which it is, shown in (b) of Fig. 7,
Constitute the inside of the sapphire substrate 100 of optical device wafer 10, concurrently form along predetermined spacing track 120 and have
Two modification layer Wl and W2 of thickness Tl and T2.
It addition, the processing conditions of above-mentioned 1st modification layer formation process sets the most as follows.
Wavelength: 1064nm
Output: 0.3W
Repetition rate: 100kHz
Optically focused spot diameter: Ф 1 μm
Hot spot number: two
Processing feed speed: 400mm/ second
As it has been described above, the whole spacing tracks 120 being upwardly formed along the predetermined party at optical device wafer 10 are implemented above-mentioned
1st metamorphic layer formation process, then, after making the chuck table 36 of holding optical device wafer 10 be positioned at and have rotated 90 degree
Position.Then, along optical device wafer 10 the side orthogonal with above-mentioned predetermined direction be upwardly formed whole between
Above-mentioned 1st metamorphic layer formation process is implemented every road 120.
Then, illustrate at two the modification layers formed along the spacing track 120 of optical device wafer 10 with reference to Fig. 8
The upside of Wl and W2 forms the method for the 3rd layer of modification layer.
In order to form the 3rd layer of modification layer, control member 8 makes angle of polarization adjustment component 66 carry out action, will be by two-fold
Penetrate that the ordinary light LBl that lens 642 separate is set to 100%, abnormal light LB2 is set to 0%, and control output and adjust
Component 63, is set as above-mentioned by the output of the pulse laser light LB vibrated by pulsed laser light line oscillator 62
1/2 of output in 1 metamorphic layer formation process.Then, as shown in (a) of Fig. 8, chuck table 36 is moved to
The laser light irradiation region residing for condenser 64 of laser light irradiation component 6, makes predetermined spacing track 120
Underface in condenser 64.Then, the focus Pa of the pulse laser light from condenser 64 irradiation is made to be positioned at
Constitute the upside of above-mentioned two modification layer Wl and W2 of the inside of the sapphire substrate 100 of optical device wafer 10.
Then, make laser light irradiation component 6 carry out action, from condenser 64 irradiated with pulse laser light, and make to add
Work feeding component 37 carries out action, make chuck table 36 with predetermined processing feed speed in (a) of Fig. 8 by arrow
Head side shown in X1 moves up (the 2nd metamorphic layer formation process).Then, as shown in (b) of Fig. 7, poly-
After the other end (being right-hand member in (b) of Fig. 8) in the road, irradiation position arrival interval 120 of light device 64, stop pulse
The irradiation of laser beam, and stop the movement of chuck table 36.As a result of which it is, as shown in (b) of Fig. 8, at structure
Become the inside of the sapphire substrate 100 of optical device wafer 10, along predetermined spacing track 120, there is thickness Tl
With the modification layer W3 that the upside of two modification layer Wl and W2 of T2 forms thickness T3.So, in the 2nd modification
In layer formation process, make the angle of polarization adjust component 66 and carry out action, the ordinary light that will be separated by birefringent lens 642
LBl is set to 100%, abnormal light LB2 is set to 0%, thus makes a focus Pa be positioned at composition optical device wafer 10
Sapphire substrate 100 inside above-mentioned two modification layer Wl and W2 upside, thus implement modify layer formed
Operation, thus without the situation occurring the too much focus upper surface at optical device wafer 10 to cause ablation.
It addition, the processing conditions of above-mentioned 2nd modification layer formation process sets the most as follows.
Wavelength: 1064nm
Output: 0.15W
Repetition rate: 100kHz
Optically focused spot diameter: Ф 1 μm
Hot spot number: 1
Processing feed speed: 400mm/ second
As it has been described above, the whole spacing tracks 120 being upwardly formed along the predetermined party at optical device wafer 10 are implemented above-mentioned
2nd metamorphic layer formation process, then, after making the chuck table 36 of holding optical device wafer 10 be positioned at and have rotated 90 degree
Position.Then, along optical device wafer 10 the side orthogonal with above-mentioned predetermined direction be upwardly formed whole between
Above-mentioned 2nd metamorphic layer formation process is implemented every road 120.
As above above such, the optical device wafer after implementing the 2nd metamorphic layer formation process along whole spacing tracks 120
10, it is transported to carry out disrumpent feelings wafer along the spacing track 120 defining 3 layers of metamorphic layer Wl, W2, W3 and divides
Cut operation.
It addition, in the above-described embodiment, to real along the whole spacing tracks 120 being formed at optical device wafer 10
Execute above-mentioned 1st metamorphic layer formation process and formed modification layer Wl and W2 after, implement above-mentioned 2nd metamorphic layer formed work
Sequence and form the example of modification layer W3 and be illustrated but it also may be, real continuously along 1 spacing track 120
Execute above-mentioned 1st metamorphic layer formation process and above-mentioned 2nd metamorphic layer formation process, be continuously formed modification layer Wl, W2
And modification layer W3.
Claims (2)
1. a laser processing device, it has: chuck table, it keeps machined object;Laser light irradiation component,
The machined object irradiating laser light that this chuck table is kept by it;And processing feeding component, its to this chuck table and
This laser light irradiation component is relatively processed feeding, and this laser processing device is characterised by,
This laser light irradiation component has: laser beam agitator, its laser beam that vibrates;Output adjusts component,
It adjusts this laser beam agitator and vibrates the output of the laser beam;Condenser, it makes to be adjusted component by this output
Laser beam after adjustment is assembled, the machined object irradiating laser light being kept this chuck table;1/2 wavelength plate,
It is disposed in this output and adjusts between component and this condenser;The angle of polarization adjusts component, and it adjusts by this 1/2 wavelength
The angle of polarization of the laser beam of plate;And control member, its control this angle of polarization adjust component,
This condenser has birefringent lens and collecting objective,
In order to avoid too much focus causes ablation at the upper surface of machined object, this control member controls this angle of polarization
Adjusting component, adjustment, will be via this birefringent lens and by this by the angle of polarization of the laser beam of this 1/2 wavelength plate
The focus of laser beam that collecting objective is assembled suitably is changed to the mode of two and the mode of.
Laser processing device the most according to claim 1, wherein,
This control member adjusts component to this output and is controlled so that controls this angle of polarization in the first way and adjusts component
Time the laser beam entering into birefringent lens be output into control in a second manner this angle of polarization adjust component time
Laser beam output 1/2, wherein, this first method is for making via this birefringent lens and by this collecting objective
The focus of the laser beam assembled becomes the mode of, and this second method is for making via this birefringent lens and by this
The focus of the laser beam that collecting objective is assembled becomes the mode of two.
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