CN103302411B - Laser processing method and apparatus thereof - Google Patents
Laser processing method and apparatus thereof Download PDFInfo
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- CN103302411B CN103302411B CN201310074030.2A CN201310074030A CN103302411B CN 103302411 B CN103302411 B CN 103302411B CN 201310074030 A CN201310074030 A CN 201310074030A CN 103302411 B CN103302411 B CN 103302411B
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- 238000003672 processing method Methods 0.000 title abstract 2
- 238000012545 processing Methods 0.000 claims abstract description 116
- 239000000463 material Substances 0.000 claims abstract description 33
- 238000001514 detection method Methods 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 28
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 10
- 238000003780 insertion Methods 0.000 claims description 4
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- 238000000034 method Methods 0.000 abstract description 24
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- 239000004065 semiconductor Substances 0.000 description 20
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- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 8
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 7
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 6
- 238000009434 installation Methods 0.000 description 5
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- 238000010586 diagram Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
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- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910017502 Nd:YVO4 Inorganic materials 0.000 description 1
- 229910009372 YVO4 Inorganic materials 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K10/00—Welding or cutting by means of a plasma
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
Abstract
The invention provides a laser processing method and an apparatus thereof. A first member and a second member form an object to be processed and the object to be processed form a laser processing hole from the first member to the second member, wherein the first member is made of a first material and the second member is made of the second material. In the process of forming the laser processing hole, the particles of the second material forming the second member are inhibited from attaching to the inner wall of the laser processing hole. In the process of forming a laser processing hole from the first member to the second member wherein the first member is made of a first material and the second member is made of the second material, the wavelengths of plasma produced from the first member and the second member which are irradiated by laser is detected. When the wavelength of plasma of the first member is detected, laser radiation with a first output pulse is carried on. When the wavelength of the plasma of the second member is detected, a second output pulse laser which is higher than the first output is stop after the predetermined pulse count is radiated.
Description
Technical field
The present invention relates to formed from first component in the machined object being formed by connecting by first component and second component reach
The laser processing and laser processing device in the Laser Processing hole of second component, the first component are formed by the first material,
The second component is formed by the second material.
Background technology
In semiconductor device manufacturing process, arranged by clathrate on the surface of the semiconductor wafer of substantially circular plate shape
The segmentation preset lines for being referred to as spacing track mark off multiple regions, form IC in the region that marks off（Integrated
Circuit：Integrated circuit）、LSI（Large Scale Integration：Large scale integrated circuit）Deng device.Also, pass through
Semiconductor wafer is cut off along spacing track, semiconductor core one by one is produced so as to the region segmentation for being formed with device is come
Piece.
In order to realize miniaturization, the multifunction of device, the pad for being laminated multiple devices and the device in stacking being arranged
The modular structure for coupling together is practical.The modular structure is configured to：At the position for being provided with pad of semiconductor wafer
Form through hole（Through hole）, and the through hole will be imbedded for conductive materials such as the aluminum that is connected with pad（Through hole）.（Example
Such as, with reference to patent documentation 1.）
The above-mentioned through hole located at semiconductor wafer is formed using boring（Through hole）.But, passing through located at semiconductor wafer
Perforation（Through hole）Diameter it is less, be 90～300 μm, using bore realize perforation there is producing rate variance.
In order to eliminate the problems referred to above, the method for punching of following chips is proposed：Chip is formed with multiple on the surface of substrate
Device and pad is formed with the device, to the chip from the rear side irradiated with pulse laser light of substrate so as to efficiently
Form the through hole for reaching pad.（For example, referring to patent documentation 2.）
Further it is proposed to following laser processing devices：Formed in the rear side irradiated with pulse laser light from substrate
Up to pad through hole when, make material plasma using the irradiation of laser beam, by detecting material that the plasma sends
Intrinsic spectrum reaches the pad that is made up of metal judging laser beam.（For example, referring to patent documentation 3.）
Patent documentation 1：Japanese Unexamined Patent Publication 2003-163323 publications
Patent documentation 2：Japanese Unexamined Patent Publication 2007-67082 publications
Patent documentation 3：Japanese Unexamined Patent Publication 2009-125756 publications
And, although selection to be wavelength low and relative to the silicon for forming substrate relative to the Metal absorption rate that forms pad
Or the high pulse laser light of baseplate material absorbance such as lithium tantalate, but come in the rear side irradiated with pulse laser light from substrate
When forming the through hole of arrival pad, if the through hole formed in substrate reaches pad and causes pulse laser light to expose to weldering
, then there is the pad being made up of metal and melt and splash in disk, the microgranule of metal is attached to the inwall of through hole and causes the matter of device
The problem that amount is reduced.
The content of the invention
The present invention is completed in view of the above fact, and its main technical task is to provide a kind of laser processing
And laser processing device, it is formed by connecting in the second component formed by the first component formed by the first material and by the second material
Machined object formed from first component reach second component Laser Processing hole when, to form second component second can be suppressed
The microgranule of material is attached to the inwall in Laser Processing hole.
In order to solve above-mentioned main technical task, according to the present invention, there is provided a kind of laser processing, the laser add
Work method is to be formed from first component to reach second component in the machined object being formed by connecting by first component and second component
The laser processing in Laser Processing hole, the first component are formed by the first material, and the second component is by the second material shape
Into the laser processing is characterised by, detects because producing to first component and second component irradiating laser light
The wavelength of plasma, proceeds the arteries and veins with the first output when the plasma light of the wavelength with first component is only detected
The irradiation of laser beam is rushed, in the case where the plasma light of the wavelength with second component is detected, in irradiation predetermined pulse
Stop after several pulse laser light with the second output higher than the described first output.
The first material for forming above-mentioned first component is made up of lithium tantalate, and above-mentioned first output is set to each subpulse
Energy be 40 μ J, second output be set to each subpulse energy be 80 μ J.
And, according to the present invention, there is provided a kind of laser processing device, the laser processing device possess：Machined object is protected
Component is held, which is used to keep machined object；With laser light irradiation component, which is used to keep structure to being held in the machined object
The machined object irradiating laser light of part, the laser light irradiation component possess：Laser beam oscillating member, which is used to vibrate
Send laser beam；Output adjustment component, which is used to adjust the laser beam sent by laser beam oscillating member vibration
Output；And condenser, which is used to the laser beam optically focused after output will be have adjusted by the output adjustment component and is shone
The machined object for being held in the machined object holding member is incident upon, the laser processing device is characterised by,
The laser processing device possesses：Plasma detection means, which is used for detection by from the laser light irradiation
The wavelength of the plasma that component is produced to machined object irradiating laser light；And control member, its be based on from the grade from
The detection signal of sub- detection means controlling the laser light irradiation component,
The plasma detection means possess：Beam splitter, which is used to for plasma light to be branched off into first path and the second tunnel
Footpath；First band filter, which is disposed in the first path, only passes through the wavelength of the plasma that the first material sends；The
One photodetector, its light of reception after first band filter, and to the control member output light intensity signal；
Second band filter, which is disposed in second path, only passes through the wavelength of the plasma that the second material sends；And the
Two photodetectors, its light of reception after second band filter, and to the control member output light intensity signal,
The control member controls the laser light irradiation component in the following manner：Make the laser light irradiation structure
Part work with to machined object irradiated with pulse laser light so as to implementing to reach second component from the first component of machined object
During Laser Processing, based on the light intensity signal exported from first photodetector and second photodetector, only from institute
The output of the first photodetector is stated when having light intensity signal, controlled in the way of reaching the first output the output adjustment component and after
The continuous irradiation for carrying out pulse laser light, when light intensity signal is outputed from second photodetector, to reach ratio
The mode of the second high output of first output controls the output adjustment component, and the pulse in irradiation predetermined pulse number swashs
Stop after light light.
The laser processing of the present invention is being formed by the first component formed by the first material and by the second material
The machined object that second component is formed by connecting forms from first component the Laser Processing side in the Laser Processing hole for reaching second component
Method, wherein, detect because of the wavelength of the plasma produced to first component and second component irradiating laser light, only detecting
Proceed the irradiation of the pulse laser light with the first output during the plasma light of the wavelength with first component, in detection
To the wavelength with second component plasma light in the case of, irradiation predetermined pulse number with than described first output it is high
The second output pulse laser light after stop, therefore, even if because exposing to the with the first pulse laser light for exporting
Two parts and second component is melted and is splashed, the microgranule of second component is attached to the Laser Processing hole formed in first component
Inwall, but, due to pulse laser light reach second component after the output of pulse laser light is changed to than first
Export high second to export and be irradiated, therefore, the microgranule for being attached to the second component of the inwall in Laser Processing hole is blown winged
And it is expelled to outside such that it is able to suppress the microgranule of second component to be attached to the inwall in Laser Processing hole.
And, in the laser processing device of the present invention, the laser processing device possesses：Plasma detection means, its
For the wavelength of plasma of the detection by producing from laser light irradiation component to machined object irradiating laser light；And control
Component processed, which controls the laser light irradiation component, plasma detection based on the detection signal from plasma detection means
Component possesses：Beam splitter, which is used to for plasma light to be branched off into first path and the second path；First band filter, which is matched somebody with somebody
Located at first path, only pass through the wavelength of the plasma that the first material sends；First photodetector, which is received by first band
Light after bandpass filter, and to control member output light intensity signal；Second band filter, which is disposed in the second path, only
Pass through the wavelength of the plasma that the second material sends；And second photodetector, its reception is after the second band filter
Light, and to the control member output light intensity signal, control member controls the laser light irradiation structure in the following manner
Part：Make the work of laser light irradiation component with to machined object irradiated with pulse laser light so as to implement the from machined object
When one part reaches the Laser Processing of second component, based on the light intensity letter exported from the first photodetector and the second photodetector
Number, when only having light intensity signal from the output of the first photodetector, the controlled output adjustment member in the way of reaching the first output
And proceed the irradiation of pulse laser light, when light intensity signal is outputed from the second photodetector, to reach ratio
The mode controlled output adjustment member of the second high output of the first output, and after the pulse laser light of irradiation predetermined pulse number
Stop, therefore, even if causing second component to melt simultaneously because the pulse laser light with the first output exposes to second component
Splash, the microgranule of second component is attached to the inwall in the Laser Processing hole formed in first component, but, due in pulse laser
Make the output of pulse laser light be changed to second higher than the first output to export and be irradiated after light arrival second component,
Therefore, the microgranule for being attached to the second component of the inwall in Laser Processing hole is blown and flies and be expelled to outside such that it is able to suppress the
The microgranule of two parts is attached to the inwall in Laser Processing hole.
Description of the drawings
Fig. 1 is the axonometric chart of the laser processing device constituted according to the present invention.
Fig. 2 is the structured flowchart of the laser light irradiation component equipped in the laser processing device shown in Fig. 1.
Fig. 3 is the structured flowchart of the plasma detection means equipped in the laser processing device shown in Fig. 1.
Fig. 4 is the structured flowchart of the control member equipped in the laser processing device shown in Fig. 1.
Fig. 5 is the top view of the semiconductor wafer as machined object.
Fig. 6 is the top view shown in the part amplification by the semiconductor wafer shown in Fig. 5.
Fig. 7 is the surface for illustrating the protection band that the semiconductor wafer shown in Fig. 5 is affixed to the framework installation in ring-type
The axonometric chart of state.
Fig. 8 is to illustrate the chuck table that the semiconductor wafer shown in Fig. 5 is held in the laser processing device shown in Fig. 1
Precalculated position in the state of coordinate relation explanatory diagram.
Fig. 9's（a）With（b）It is the explanatory diagram of the perforation process implemented by the laser processing device shown in Fig. 1.
Figure 10's（a）With（b）It is the explanatory diagram of the perforation process implemented by the laser processing device shown in Fig. 1.
Figure 11's（a）With（b）Be when illustrating for detection to lithium tantalate substrate irradiated with pulse laser light the grade that produces from
The output voltage of the first photodetector of the light intensity of son and for detection to the pad irradiated with pulse laser light that formed by copper
The figure of the output voltage of the second photodetector of the light intensity of the plasma produced during line.
Label declaration
2：Stationary base；
3：Chuck table mechanism；
36：Chuck table；
37：Processing feeding component；
374:X-direction position detection means；
38：First index feed component；
384：Y direction position detection means；
4：Laser light irradiation unit supporting device；
42：Movable support pedestal；
43：Second index feed component；
5：Laser light irradiation unit；
52：Laser light irradiation component；
6：Pulse laser light oscillating member；
61：Pulsed laser light line oscillator；
62：Repetition rate setting element；
7：Audio-optical deflection component；
71：Acousto-optic element；
72：RF agitators；
73：RF amplifiers；
74：Deflection angle adjustment member；
75：Output adjustment component；
76：Laser beam absorption component；
8：Condenser；
9：Plasma detection means；
91：Plasma receiving member；
92：Beam splitter；
93：First band filter；
94：First photodetector；
95：Direction transformation mirror；
96：Second band filter；
97：Second photodetector；
11：Imaging member；
20：Control member；
30：Chip；
301：Segmentation preset lines；
302：Device；
303：Pad；
304：Laser Processing hole.
Specific embodiment
Hereinafter, for laser processing of the invention and the preferred implementation of laser processing device, referring to the drawings more
Plus be described in detail.
In fig. 1 it is shown that the axonometric chart of the laser processing device constituted according to the present invention.Laser Processing shown in Fig. 1
Device 1 possesses：Stationary base 2；Chuck table mechanism 3, which is with can be along the processing direction of feed shown in arrow X（X-axis side
To）Mobile mode is disposed in the stationary base 2 and for keeping machined object；Laser light irradiation unit supporting device 4,
Which is with can be along the index feed direction by arrow Y shown in orthogonal with X-direction（Y direction）Mobile mode is disposed in quiet
Only pedestal 2；And laser light irradiation unit 5, which is with can be along the focuss position adjustment direction shown in arrow Z（Z axis side
To）Mobile mode is disposed in the laser light irradiation unit supporting device 4.
Above-mentioned chuck table mechanism 3 possesses：A pair of guide rails 31,31, which is abreast disposed in stationary base along X-direction
On 2；First slide block 32, which is can be disposed on the guide rail 31,31 in the way of X-direction movement；Second slide block 33, its
Can be disposed on first slide block 32 in the way of Y direction movement；Cover workbench 35, which is supported by cylinder part 34
On second slide block 33；And as the chuck table 36 of machined object holding member.The chuck table 36 has
The standby absorption chuck 361 formed by porous material, the chuck table 36 will be used as quilt by aspiration means (not shown)
Such as discoid semiconductor wafer of machining object is held on absorption chuck 361.The chuck table 36 for so constituting passes through
Rotate in the 34 interior impulse motor (not shown) for arranging of cylinder part.In addition, being equipped with for fixing in chuck table 36
The binding clasp 362 of the framework of ring-type described later.
Be provided with the lower surface of above-mentioned first slide block 32 groove is directed for 31,31 chimeric a pair with above-mentioned a pair of guide rails
321st, 321, also, above-mentioned first slide block 32 upper surface be provided be formed parallel to along Y direction a pair of guide rails 322,
322.By making to be directed, groove 321,321 is chimeric with a pair of guide rails 31,31, so as to such the first slide block 32 for constituting is configured to
Can move in X-direction along a pair of guide rails 31,31.Chuck table mechanism 3 in embodiment illustrated possesses for making
The X-direction mobile member that first slide block 32 is moved in X-direction along a pair of guide rails 31,31（Processing feeding component 37）.It is described
Processing feeding component 37 is included in the external thread rod 371 abreast arrange between above-mentioned a pair of guide rails 31 and 31 and for driving institute
State the driving sources such as the impulse motor 372 of the rotation of external thread rod 371.One end of external thread rod 371 is supported in the way of rotating freely
In drive tab 373, the drive tab 373 is fixed on above-mentioned stationary base 2, the other end of external thread rod 371 and above-mentioned pulse horse
Output shaft up to 372 is connected.In addition, external thread rod 371 and the insertion internal thread hole formed in female thread block (not shown)
Threaded connection, the female thread block (not shown) are highlightedly located at the central lower surface of the first slide block 32.Therefore, by using
Impulse motor 372 drives external thread rod 371 to rotate and reverse, so that the first slide block 32 is moved in X-direction along guide rail 31,31
It is dynamic.
Laser processing device in embodiment illustrated possess for detect above-mentioned chuck table 36 processing feed
Amount is the X-direction position detection means 374 of X-direction position.X-direction position detection means 374 by read head 374b and
Constitute along the straightedge rule 374a that guide rail 31 is arranged, the read head 374b is disposed in the first slide block 32 and together with the first slide block 32
Move along straightedge rule 374a.The read head 374b of X-direction position detection means 374 in the illustrated embodiment every
1 μm of pulse signal that a pulse is sent to control member described later.Also, control member described later is by the pulse to being input into
The processing amount of feeding i.e. position of X-direction that signal is counted to detect chuck table 36.In addition, using pulse horse
In the case of the driving source of component 37 being fed as above-mentioned processing up to 372, by to 372 output drive signal of impulse motor
The driving pulse of control member described later is counted, it is also possible to detect the processing amount of feeding i.e. X-axis side of chuck table 36
To position.Additionally, in the case where the driving source of component 37 is fed as above-mentioned processing using servo motor, will be used for detecting
The pulse signal of the rotary encoder output of the rotating speed of servo motor is sent to control member described later, and control member is to input
Pulse signal is counted, and is thus also capable of detecting when the processing amount of feeding i.e. position of X-direction of chuck table 36.
Be provided with the lower surface of above-mentioned second slide block 33 and be directed groove 331,331 for a pair, it is the pair of be directed groove 331,
331 is chimeric with a pair of guide rails 322,322 that the upper surface in above-mentioned first slide block 32 is arranged, by be directed described in making groove 331,
331 is chimeric with a pair of guide rails 322,322, so as to above-mentioned second slide block 33 to be configured to move along Y direction.The reality of diagram
Apply the chuck table mechanism 3 in mode and possess the first Y direction mobile member（First index feed component 38）, described first
Y direction mobile member（First index feed component 38）For making the second slide block 33 lead along a pair arranged in the first slide block 32
Rail 322,322 is moved in Y direction.The first index feed component 38 is included between above-mentioned a pair of guide rails 322 and 322 and puts down
The external thread rod 381 that arranges capablely and for driving the driving sources such as the impulse motor 382 of the rotation of the external thread rod 381.Outer spiral shell
One end of rasp bar 381 is supported on drive tab 383 in the way of rotating freely, and the drive tab 383 is fixed on above-mentioned first slide block
32 upper surface, the other end of external thread rod 381 are connected with the output shaft of above-mentioned impulse motor 382.In addition, external thread rod
381 are threadedly coupled with the insertion internal thread hole formed in female thread block (not shown), and the female thread block (not shown) is highlightedly
It is located at the central lower surface of the second slide block 33.Therefore, external thread rod 381 is driven to rotate forward and anti-by using impulse motor 382
Turn so that the second slide block 33 is moved in Y direction along guide rail 322,322.
Laser processing device in embodiment illustrated possesses Y direction position detection means 384, the Y direction
Position detection means 384 are used for the indexing processing amount of feeding i.e. Y direction position for detecting above-mentioned second slide block 33.The Y-axis side
Constitute to position detection means 384 by read head 384b and along the straightedge rule 384a that guide rail 322 is arranged, the read head 384b matches somebody with somebody
Move located at the second slide block 33 and together with the second slide block 33 along straightedge rule 384a.Y direction position detection means 384
Read head 384b sends the pulse signal of a pulse in the illustrated embodiment every 1 μm to control member described later.And
And, control member described later is counted to the pulse signal being input into, and thus detects the index feed amount of chuck table 36
That is the position of Y direction.In addition, using impulse motor 382 as the driving source of above-mentioned first index feed component 38 feelings
Under condition, counted by the driving pulse to the control member described later to 382 output drive signal of impulse motor, it is also possible to
Detect the index feed amount i.e. position of Y direction of chuck table 36.Additionally, using servo motor as above-mentioned first
In the case of the driving source of index feed component 38, by the pulse of the rotary encoder output of the rotating speed for being used to detect servo motor
Signal is sent to control member described later, and control member is counted to the pulse signal being input into, and is thus also capable of detecting when card
The index feed amount of disk workbench 36 is the position of Y direction.
Above-mentioned laser light irradiation unit supporting device 4 possesses：A pair of guide rails 41,41, which is abreast arranged along Y direction
In stationary base 2；With movable support pedestal 42, which is described can be disposed in the way of direction shown by arrow Y movement
On guide rail 41,41.The movable support pedestal 42 is made up of mobile support 421 and installation portion 422, the mobile support
421 are disposed on guide rail 41,41 in the way of it can move, and the installation portion 422 is installed on the mobile support 421.
One side of installation portion 422 is abreast provided with a pair of guide rails 423,423 extended along Z-direction.In embodiment illustrated
Laser light irradiation unit supporting device 4 possess the second Y direction mobile member（Second index feed component 43）, described
Two Y direction mobile members（Second index feed component 43）For making movable support pedestal 42 along a pair of guide rails 41,41 in Y-axis
Move in direction.The second index feed component 43 is included in the external screw thread abreast arrange between above-mentioned a pair of guide rails 41,41
Bar 431 and the driving source such as impulse motor 432 for driving the rotation of the external thread rod 431.One end of external thread rod 431 is revolving
The mode for turning freely is supported on drive tab (not shown), and the drive tab (not shown) is fixed on above-mentioned stationary base 2, external screw thread
The other end of bar 431 is connected with the output shaft of above-mentioned impulse motor 432.In addition, external thread rod 431 with (not shown) interior
The internal thread hole threaded connection that threaded block is formed, the female thread block (not shown) are protrusively provided in composition movable support pedestal
The central lower surface of 42 mobile support 421.Therefore, by using impulse motor 432 drive external thread rod 431 rotate forward and
Reversion so that movable support pedestal 42 is moved in Y direction along guide rail 41,41.
Laser light irradiation unit 5 in embodiment illustrated possesses unit keeper 51 and is installed on the unit to be protected
The laser light irradiation component 52 of holder 51.A pair are provided with unit keeper 51 and are directed groove 511,511, it is the pair of to be drawn
Guide groove 511,511 is chimeric with a pair of guide rails 423,423 arranged in above-mentioned installation portion 422 in the way of it can slide, by making
The groove 511,511 that is directed is chimeric with above-mentioned guide rail 423,423, unit keeper 51 is supported to and can be moved along Z-direction
It is dynamic.
Laser light irradiation unit 5 in embodiment illustrated possesses Z-direction mobile member（Focuss position adjustment
Component 53）, the Z-direction mobile member（Focuss position adjustment means 53）For making unit keeper 51 along a pair of guide rails
423rd, 423 move in Z-direction.Focuss position adjustment means 53 are included in the outer spiral shell arrange between a pair of guide rails 423,423
Rasp bar（It is not shown）With for driving the driving sources such as the impulse motor 532 of external thread rod rotation, by using impulse motor
532 drive external thread rod (not shown) to rotate and reverse so that unit keeper 51 and laser light irradiation component 52 are along guide rail
423rd, 423 move in Z-direction.In addition, in the illustrated embodiment, just being transferred by driving pulse motor 532 makes laser
Light irradiation component 52 is moved upward, and inverts to make laser light irradiation component 52 downwards by driving pulse motor 532
It is mobile.
Above-mentioned laser light irradiation component 52 possesses：The housing 521 of drum, which essentially horizontally configures；Pulse
Laser beam oscillating member 6, which is disposed in housing 521 as illustrated in fig. 2；As the audio-optical deflection component 7 of light deflecting member,
Which is used for the optical axis direction processing direction of feed of the laser beam for sending the vibration of pulse laser light oscillating member 6（X-direction）
Deflection；And condenser 8, which is used to make to expose to by above-mentioned card by the pulse laser light after the audio-optical deflection component 7
The machined object W that disk workbench 36 keeps.
Above-mentioned pulse laser light oscillating member 6 is by pulsed laser light line oscillator 61 and is attached to the pulsed laser light
The repetition rate setting element 62 of line oscillator 61 is constituted, the pulsed laser light line oscillator 61 by YAG laser oscillators or
YVO4 laser oscillators are constituted.The vibration of pulsed laser light line oscillator 61 is sent by making a reservation for that repetition rate setting element 62 sets
The pulse laser light of frequency（LB）.The pulse that repetition rate setting element 62 is sent to the vibration of pulsed laser light line oscillator 61
The repetition rate of laser beam is set.61 He of pulsed laser light line oscillator of the pulse laser light oscillating member 6
Repetition rate setting element 62 is controlled by control member described later.
Above-mentioned audio-optical deflection component 7 possesses：Acousto-optic element 71, which is used to send out the vibration of pulse laser light oscillating member 6
The pulse laser light for going out（LB）Optical axis direction processing direction of feed（X-direction）Deflection；RF agitators 72, which is used to generate uses
In the RF of applying to the acousto-optic element 71（Radio frequency：radio frequency）；RF amplifiers 73, which is used for by the RF
The energy of the RF that agitator 72 is generated carries out amplification and applies the RF to acousto-optic element 71；Deflection angle adjustment member 74,
Which is used for the frequency for adjusting the RF generated by RF agitators 72；And output adjustment component 75, which is used for adjustment by RF agitators
The amplitude of 72 RF for generating.Above-mentioned acousto-optic element 71 can accordingly adjust the optical axis for making laser beam with the frequency of the RF for applying
The angle of deflection, and the output of laser beam can be accordingly adjusted with the amplitude of the RF for applying.In addition, deflecting structure as light
Part, it is also possible to replace above-mentioned audio-optical deflection component 7 using the electro-optical deflection component of electrooptic cell is employed.Above-mentioned deflection angle
Degree adjustment member 74 and output adjustment component 75 are controlled by control member described later.
And, it is illustrated that embodiment in laser light irradiation component 52 possess laser beam absorption component 76, right
In the case that above-mentioned acousto-optic element 71 is applied with the RF of preset frequency, the laser beam absorption component 76 is used for such as void in Fig. 2
The laser beam after acousto-optic element 71 is deflected is absorbed as shown in line.
Above-mentioned condenser 8 is installed on the end of housing 521, and above-mentioned condenser 8 possesses：Direction transformation mirror 81, which will be by upper
State the pulse laser light after audio-optical deflection component 7 is deflected to be transformed into downward；With the collecting lenses being made up of telecentric lens
82, which is used to make the laser beam optically focused after being changed direction by the direction transformation mirror 81.
Laser light irradiation component 52 in embodiment illustrated is constituted as described above, below, which is made with reference to Fig. 2
With illustrating.
In the electricity for being applied such as 5V by control member described later to the deflection angle adjustment member 74 of audio-optical deflection component 7
Pressure, in the case of applying the RF of frequency corresponding with 5V to acousto-optic element 71, sends from the vibration of pulse laser light oscillating member 6
The optical axis of pulse laser light deflect as shown in single dotted broken line in Fig. 2 and be concentrated on focuss Pa.And, by aftermentioned
Control member apply the voltage of such as 10V to deflection angle adjustment member 74, frequency corresponding with 10V is applied to acousto-optic element 71
In the case of the RF of rate, solid line in the optical axis such as Fig. 2 of the pulse laser light sent from the vibration of pulse laser light oscillating member 6
As shown in deflect and be concentrated on focuss Pb, the focuss Pb positioned at from above-mentioned focuss Pa along processing direction of feed（X-axis
Direction）The position of scheduled volume is moved to the left side in Fig. 2.On the other hand, deflection angle is being adjusted by control member described later
Component 74 applies the voltage of such as 15V, in the case of applying the RF of frequency corresponding with 15V to acousto-optic element 71, swashs from pulse
The optical axis of the pulse laser light that the vibration of light light oscillating member 6 sends is deflected as shown in double dot dash line in Fig. 2, and optically focused
In focuss Pc, the focuss Pc is positioned at from above-mentioned focuss Pb edges processing direction of feed（X-direction）To the left side in Fig. 2
The position of mobile scheduled volume.And, the deflection angle adjustment member 74 of audio-optical deflection component 7 is being applied by control member described later
Plus the voltage of such as 0V, in the case of applying the RF of frequency corresponding with 0V to acousto-optic element 71, vibrate from pulse laser light
The pulse laser light that the vibration of component 6 sends is directed to laser beam absorption component 76 as shown in phantom in Figure 2.This
Sample, the laser beam after being deflected by acousto-optic element 71 with put on the voltage of deflection angle adjustment member 74 accordingly process into
To direction（X-direction）Deflection.
Return Fig. 1 proceed explanation, it is illustrated that embodiment in laser processing device possess plasma detection means
9, the plasma detection means 9 are installed on the housing of the laser light irradiation component 52 for constituting laser light irradiation unit 5
521, for detecting the plasma by producing from laser light irradiation component 52 to machined object irradiating laser light.It is described
Plasma detection means 9 possess：Plasma receiving member 91, which is received because as shown in Figure 3 will be from laser light irradiation structure
The grade that the laser light irradiation that the condenser 8 of part 52 is irradiated is produced to the machined object W that kept by chuck table 36 from
Son；Beam splitter 92, the plasma light that the plasma receiving member 91 is received is branched off into the first light path 92a and the second light path by which
92b；First band filter 93, which is disposed in the first light path 92a, only makes wavelength for the first setting wavelength（Form quilt described later
The wavelength sent by first material of the first component of machining object）Light pass through；First photodetector 94, which is received by described
The light output light intensity signal of the first band filter 93；Direction transformation mirror 95, which is disposed in the second light path 92b；Second band
Bandpass filter 96, it is the second setting wavelength which only makes the wavelength for having converted the plasma light behind direction by the direction transformation mirror 95
（Form the wavelength sent by the second material of the second component of machined object described later）Light pass through；And second photodetector
97, which is received by by the light output light intensity signal of second band filter 96.Above-mentioned plasma receiving member 91
It is made up of collecting lenses 911 and the lens case 912 for receiving the collecting lenses 911, lens case 912 is as shown in Figure 1
It is installed on the housing 521 of laser light irradiation component 52.And, as shown in figure 1, being equipped with angle adjustment in lens case 912
With knob 913 such that it is able to adjust the setting angle of collecting lenses 911.In addition, in the illustrated embodiment, in order to only make
The wavelength of the plasma light of lithium tantalate（670nm）Pass through, above-mentioned first band filter 93 makes wavelength in the model of 660～680nm
The light for enclosing passes through.And, in the illustrated embodiment, in order to only make the wavelength of the plasma light of copper（515nm）Pass through, it is above-mentioned
Second band filter 96 passes through the light of the scope that wavelength is 500～540nm.Plasma detection in embodiment illustrated
Component 9 is constituted as described above, is received the first photodetector 94 by the light of the first band filter 93 and is received by the
The intensity of the control member output that the second photodetector 97 of the light of two band-pass filter 96 is stated respectively backward and the light for being received
Corresponding voltage signal.
Return Fig. 1 proceed explanation, it is illustrated that embodiment in laser processing device possess imaging member 11, it is described
Imaging member 11 is disposed in the leading section of housing 521, is laser machined by above-mentioned laser light irradiation component 52 for correspondence
Machining area imaged.Except the common imaging apparatuss shot by means of visible ray（CCD）Outside, the shooting
Component 11 also by irradiating ultrared infrared illumination component, can catch and be shone by the infrared illumination component to machined object
The ultrared optical system penetrated and the shooting for exporting the signal of telecommunication corresponding with the infrared ray captured by the optical system
Element（Infrared C CD）Deng composition, the imaging member 11 sends the picture signal of shooting to control member described later.
Laser processing device in embodiment illustrated possesses the control member 20 shown in Fig. 4.Control member 20 is by counting
Mechanism is calculated into which possesses：Central processor（CPU）201, which is used to carry out calculation process according to control program；Read-only storage
Device（ROM）202, which is used to store control program etc.；The random access memory that can be read and write（RAM）203, after which is used for storage
The control figure stated, the data of the design load of machined object, operation result etc.；Enumerator 204；Input interface 205；And output interface
206.From above-mentioned X-direction position detection means 374, Y direction position detection means 384, plasma detection means 9
The detection signal of one photodetector 94 and the second photodetector 97 and imaging member 11 etc. is imported into the defeated of control member 20
Incoming interface 205.Also, from the output interface 206 of control member 20 to above-mentioned impulse motor 372, impulse motor 382, pulse horse
Up to 432, impulse motor 532 and the pulse laser of the pulse laser light oscillating member 6 for constituting laser light irradiation component 52
The deflection angle adjustment member 74 of light line oscillator 61, repetition rate setting element 62 and audio-optical deflection component 7, output adjustment structure
The output control signals such as part 75.In addition, above-mentioned random access memory（RAM）203 possess for storage form machined object
The number of the first memory area 203a of the relation between material and the wavelength of plasma, the design load for storing chip described later
According to the second memory area 203b and other memory areas.
Laser processing device in embodiment illustrated is constituted as described above, below, which is acted on and is illustrated.Figure
5 top views for showing the chip 30 as the machined object that will be laser machined.With regard to the chip 30 shown in Fig. 5, in figure
In the embodiment for showing, in the lithium tantalate substrate 300 that thickness is 300 μm（First component）Surface 300a by clathrate arrange
A plurality of segmentation preset lines 301 mark off multiple regions, be respectively formed with device 302 in the region for marking off.It is described each
Device 302 is all formed as identical structure.Multiple pads 303 are formed with respectively as shown in Figure 6 on the surface of device 302
（303a～303j）（Second component）.The pad 303 as second component（303a～303j）In embodiment illustrated
In formed by copper.In addition, in the illustrated embodiment, 303a and 303f, 303b and 303g, 303c and 303h, 303d with
303i, 303e are identical with the X-direction position of 303j.In the plurality of pad 303（303a～303j）Formed from the back side respectively
300b reaches the processing hole of pad 303（Through hole）.The pad 303 of each device 302（303a～303j）X-direction（It is in figure 6
Left and right directions）Interval A and each device 302 formed pad 303 in clipping segmentation preset lines 301 in X-direction（In Fig. 6
In be left and right directions）Adjacent pad is that the interval B between pad 303e and pad 303a is set in the illustrated embodiment
It is set to identical interval.And, the pad 303 of each device 302（303a～303j）Y-direction（It is above-below direction in figure 6）
Interval C and each device 302 formed pad 303 in clipping segmentation preset lines 301 in the Y direction（It is upper and lower in figure 6
Direction）Adjacent pad is that the interval D between pad 303f and pad 303a and pad 303j and pad 303e is being illustrated
Embodiment is set to identical interval.With regard to such chip 30 for constituting, along each row E1 ... En and Ge Lie shown in Fig. 5
The number of the device 302 that F1 ... Fn are arranged and above-mentioned each interval A, B, C, D and X, the data storage of the design load of Y-coordinate value are in upper
State random access memory（RAM）203 the second memory area 203b.
To using above-mentioned laser processing device each device 302 for being formed at chip 30 pad 303（303a～
303j）Portion forms Laser Processing hole（Through hole）The embodiment of Laser Processing illustrate.
The surface 300a of chip 30 is affixed to protection band as shown in Figure 7 that be made up of synthetic resin sheets such as polyolefin
50, the protection band 50 is installed on the framework 40 of ring-type.Therefore, the back side 300b of chip 30 is located at upside.So, will be across guarantor
Protecting band 50 is supported on the side by protection band 50 of the chip 30 of the framework 40 of ring-type and is placed in the laser processing device shown in Fig. 1
Chuck table 36 on.Also, by making aspiration means work (not shown), chip 30 is aspirated into holding across protection band 50
On chuck table 36.Therefore, back side 300b is made to keep chip 30 in upside.And, the framework 40 of ring-type is by clamping
Device 362 is fixed.
Suction as described above keeps the chuck table 36 of chip 30 to be positioned at imaging member by processing feeding component 37
11 underface.Chip 30 when chuck table 36 is positioned in the underface of imaging member 11, on chuck table 36
Become the state for being positioned in the coordinate position shown in Fig. 8.In this condition, implement calibrating operation, in the calibrating operation,
The cancellate segmentation preset lines 301 for judging to be formed in the chip 30 kept by chuck table 36 whether with X-direction and Y-axis
Direction abreast arranges.That is, imaged by 11 pairs of chips 30 for being held in chuck table 36 of imaging member, perform pattern
The image procossings such as matching are carrying out calibrating operation.Now, the surface 300a that the formation of chip 30 has segmentation preset lines 301 is located at down
Side, but as the lithium tantalate substrate 300 for forming chip 30 is the transparent body, it is right through coming therefore, it is possible to the back side 300b from chip 30
Segmentation preset lines 301 are imaged.
Next, mobile chuck table 36, the row E1 that will be formed in the top in the device 302 of chip 30 is in
In Fig. 8, the device 302 of high order end is positioned at the underface of imaging member 11.Then, further will be formed in the electrode of device 302
303（303a～303j）In the upper left electrode 303a in Fig. 8 be positioned at the underface of imaging member 11.In the state
Under, imaging member 11 is while detecting electrode 303a by its coordinate figure（a1）As the first processing feeding starting position coordinate figure
Send to control member 20.Then, control member 20 is by the coordinate figure（a1）As the first processing feeding starting position coordinate
Value is stored in random access memory（RAM）203（Processing feeding starting position detection operation）.Now, due to imaging member 11
Arranged along X-direction at predetermined spaced intervals with the condenser 8 of laser light irradiation component 52, therefore, what X-coordinate value was stored is
Plus the value behind the interval between above-mentioned imaging member 11 and condenser 8.
So, when the first processing of the device 302 of the row E1 for detecting the top in Fig. 8 feeds starting position coordinate
Value（a1）Afterwards, make chuck table 36 along Y direction index feed and move along X-direction, the amount of the index feed is
The interval of segmentation preset lines 301, takes the photograph so as to the device 302 of the high order end in the second row E2 from the top in Fig. 8 is positioned at
As the underface of component 11.Then, further will be formed in the electrode 303 of device 302（303a～303j）In in Fig. 8
Upper left electrode 303a is positioned at the underface of imaging member 11.In this condition, imaging member 11 is in detecting electrode 303a
While by its coordinate figure（a2）Send to control member 20 as the second processing feeding starting position coordinate figure.Then, control
Component 20 is by the coordinate figure（a2）Random access memory is stored in as the second processing feeding starting position coordinate figure（RAM）
203.Now, as the condenser 8 of imaging member 11 and laser light irradiation component 52 separates pre- along X-direction as described above
Fixed interval arranges, therefore, X-coordinate value storage is plus the value behind the interval between above-mentioned imaging member 11 and condenser 8.
Hereafter, control member 20 repeats above-mentioned index feed and processing feeding starting position detection operation until in Fig. 8
The row En of bottom, detects the processing feeding starting position coordinate figure of the device 302 formed in each row（A3～an）, and deposited
It is stored in random access memory（RAM）203.In addition, in the illustrated embodiment, multiple devices of chip 30 be will be formed in
The device 302 in the high order end of the row En of bottom in Fig. 8 in 302 is set as measurement device, and by the measurement device
Processing feeding starting position coordinate figure（an）As measurement position coordinate figure（an）It is stored in random access memory（RAM）
203。
After above-mentioned processing feeding starting position detection operation is implemented, implement perforation process, in the perforation process
In, in each electrode 303 of each device 302 for being formed at chip 30（303a～303j）The back side bore a hole to be formed Laser Processing hole
（Through hole）.In perforation process, make the processing feeding work of component 37 first moving chuck table 36, will be stored in it is above-mentioned with
Machine accesses memorizer（RAM）203 the first processing feeding starting position coordinate figure（a1）It is positioned at laser light irradiation component 52
Condenser 8 underface.The first processing is fed into starting position coordinate figure so（a1）It is positioned at the underface of condenser 8
State is Fig. 9（a）Shown state.From Fig. 9's（a）Shown state starts, and control member 20 controls above-mentioned processing feeding
Component 37 is so that chuck table 36 is along Fig. 9's（a）Direction shown in middle arrow X1 with predetermined translational speed be processed into
Give, meanwhile, control member 20 makes laser light irradiation component 52 work with from 8 irradiated with pulse laser light of condenser.In addition, making
From near the upper surface of the focuss P alignment chips 30 of the laser beam of the irradiation of condenser 8.Now, control member 20 is according to next
Export for the deflection angle to audio-optical deflection component 7 from the detection signal of the read head 374b of X-direction position detection means 374
The control signal that degree adjustment member 74 and output adjustment component 75 are controlled.
On the other hand, the output of RF agitators 72 and the control from deflection angle adjustment member 74 and output adjustment component 75
The corresponding RF of signal.Amplification is carried out by RF amplifiers 73 and acousto optic element is applied to from the energy of the RF of the output of RF agitators 72
Part 71.As a result, acousto-optic element 71 makes from the vibration of pulse laser light oscillating member 6 optical axis of the pulse laser light for sending
Deflect and synchronous with translational speed in the range of the position shown in the position to double dot dash line shown in single dotted broken line from Fig. 2.
As a result, the pulse laser light of predetermined output can be exposed to the first processing feeding starting position coordinate figure（a1）.
During the perforation process stated on the implementation, control member 20 is vibrated to laser beam oscillating member 6 by enumerator 204
The umber of pulse of the pulse laser light for sending is counted, and from 94 input light of the first photodetector of plasma detection means 9
Strength signal.Here, the light intensity signal to exporting from the first photodetector 94 is illustrated.When the tantalic acid to constituting chip 30
During 300 irradiated with pulse laser light of lithium substrate, plasma of the wavelength for 67Onm is produced.The wavelength for 67Onm plasma such as
As shown in Figure 3 by 911 optically focused of collecting lenses of the plasma receiving member 91 for constituting plasma detection means 9, and by the
One band filter 93 reaches the first photodetector 94.
Figure 11's（a）Show
Plasma light intensity the first photodetector 94 output voltage.Figure 11's（a）In, transverse axis represents pulse laser light
Umber of pulse, the longitudinal axis represents magnitude of voltage（V）.Figure 11's（a）In shown embodiment, in the umber of pulse of pulse laser light
To about 80～85 pulses, magnitude of voltage is 2.5V or so, when pulse laser light umber of pulse pulse more than 85 and
Reach perforation process be close at the end of, magnitude of voltage is drastically reduced.
In addition, Figure 11's（b）In, show for detection in the 303 irradiated with pulse laser light of pad to being made up of copper
The output voltage of the second photodetector 97 of the light intensity of the plasma produced during line.Figure 11's（b）In, transverse axis represents pulse
The umber of pulse of laser beam, the longitudinal axis represent magnitude of voltage（V）.Figure 11's（b）In shown embodiment, magnitude of voltage is swashed from pulse
The umber of pulse of light light is that 80～85 pulses begin to ramp up.The output voltage of second photodetector 97 begins to ramp up meaning
Taste, and forms through hole in lithium tantalate substrate 300, and pulse laser light starts to irradiate pad 303.
As described above, based on the output voltage from the first photodetector 94 and the second photodetector 97, control member 20
The output of pulse laser light is controlled in the following manner.That is, above-mentioned laser light irradiation component 52 is controlled in the following manner：Only
When having output voltage from the input of the first photodetector 94, proceed the irradiation of the pulse laser light with the first output,
When having output voltage from the input of the second photodetector 97, in irradiation predetermined pulse number with higher by second than the first output
Stop after the pulse laser light of output.Specifically, above-mentioned laser light irradiation component 52 is controlled in the following manner：Only from
When the input of first photodetector 94 has output voltage, to reach the first output（2W is output as averagely, pulse energy is 40 μ J）'s
Mode controls above-mentioned output adjustment component 75 and proceeds the irradiation of pulse laser light, is input into from the second photodetector 97
In the case of having output voltage, to reach second output higher than the first output（4W is output as averagely, pulse energy is 80 μ J）
Mode control above-mentioned output adjustment component 75, and in irradiation predetermined pulse number（10 subpulses）Pulse laser light after stop
Only.In addition, the output control of pulse laser light is being exported into higher than the first output second（4W, pulse are output as averagely
Energy is 80 μ J）Opportunity, can for example be to reach moment of 0.5V when the output voltage from the second photodetector 97（Pulse
The umber of pulse of laser beam is the moment of 100 subpulses）, start to irradiate 10 pulses from the moment.So, even if because of pulse
Laser beam reaches pad 303 and the 303 irradiated with pulse laser light of pad to being made up of copper, so that the weldering being made up of copper
Disk 303 is melted and is splashed, and the microgranule of copper is attached to the inwall in the Laser Processing hole formed in lithium tantalate substrate 300, but, due to
After pulse laser light reaches pad 303, make the output of pulse laser light be changed into second output higher than the first output（It is flat
4W is output as, pulse energy is 80 μ J）It is irradiated, therefore, the microgranule for being attached to the copper of the inwall in Laser Processing hole is blown
Fly and be expelled to outside such that it is able to suppress the microgranule of copper to be attached to the inwall in Laser Processing hole.
In addition, the processing conditionss in above-mentioned perforation process are set as follows.
Light source：LD encourages Q-switch Nd：YVO4
Wavelength：532nm
It is average to export：First is averagely output as 2W
Second is averagely output as 4W
Pulse energy：First pulse energy is 40 μ J
Second pulse energy is 80 μ J
Repetition rate：50kHz
Pulse width：10ps
Optically focused spot diameter：
On the other hand, control member 20 is input into the detection letter of the read head 374b from X-direction position detection means 374
Number, and counted by 204 pairs of detection signals of enumerator.Also, when the count value of enumerator 204 reaches next pad
After 303 coordinate figure, the control laser light irradiation of control member 20 component 52 implements above-mentioned perforation process.Hereafter, whenever counting
When the count value of device 204 reaches the coordinate figure of pad 303, control member 20 all makes the work of laser light irradiation component 52 to implement
Above-mentioned perforation process.Then, such as Fig. 9（b）It is shown, in the device of the low order end of the El rows to being formed at semiconductor wafer 30
It is in 302 pad 303, Fig. 9's（b）In electrode 303e in low order end position implement above-mentioned perforation process after, make
Above-mentioned processing feeding component 37 quits work, and makes chuck table 36 stop movement.As a result, in semiconductor wafer 30
Lithium tantalate substrate 300 such as Fig. 9（b）As shown in formed reach pad 303 processing hole 304.
Next, control member 20 controls above-mentioned first index feed component 38, so that laser light irradiation component 52
Condenser 8 is along Fig. 9's（b）In the direction vertical with paper carry out index feed.On the other hand, control member 20 be input into from
The detection signal of the read head 384b of Y direction position detection means 384, and entered by 204 pairs of detection signals of enumerator
Row is counted.Also, after the count value of enumerator 204 reaches the value suitable with the interval C of the Y direction in figure 6 of pad 303,
Make the first index feed component 38 quit work, and stop the index feed of the condenser 8 of laser light irradiation component 52.Its
As a result, condenser 8 is positioned in the pad 303j opposed with above-mentioned pad 303e（With reference to Fig. 6）Surface.The state is
Figure 10's（a）Shown state.Figure 10's（a）In the state of shown, control member 20 controls above-mentioned processing feeding component 37
So that chuck table 36 is along Figure 10's（a）Direction shown in middle arrow X2 is processed feeding with predetermined translational speed, together
When, make the work of laser light irradiation component 52 to implement above-mentioned perforation process.Also, control member 20 is as described above by meter
The detection signal of number 204 couples of read head 374b from X-direction position detection means 374 of device is counted, whenever the meter
When numerical value reaches pad 303, control member 20 all makes the work of laser light irradiation component 52 to implement above-mentioned perforation process.So
Afterwards, such as Figure 10（b）It is shown, in the pad 303f of the device 302 of the high order end of the El rows to being formed at semiconductor wafer 30
After above-mentioned perforation process is implemented in position, make above-mentioned processing feeding component 37 quit work, and make chuck table 36 stop movement.
As a result, in the lithium tantalate substrate 300 such as Figure 10 of semiconductor wafer 30（b）As shown in pad 303 rear side shape
Into Laser Processing hole 304.
As described above, the rear side in the pad 303 of the device 302 of the E1 rows for being formed at semiconductor wafer 30 forms sharp
Behind light processing hole 304, control member 20 makes processing feeding component 37 and the first index feed component 38 work, and will be formed in half
The device 302 of the E2 rows of conductor chip 30 it is pad 303, be stored in above-mentioned random access memory（RAM）The second of 203 adds
Work feeds starting position coordinate figure（a2）It is positioned at the underface of the condenser 8 of laser light irradiation component 52.Then, control dress
20 control laser light irradiation components 52 and processing feeding component 37 and the first index feed component 38 are put, quasiconductor is being formed at
The rear side of the pad 303 of the device 302 of the E2 rows of chip 30 implements above-mentioned perforation process.Hereafter, to being formed at quasiconductor
The rear side of the pad 303 of the device 302 of E3～En rows of chip 30 also implements above-mentioned perforation process.As a result, partly
The lithium tantalate substrate 300 of conductor chip 30, forms Laser Processing hole in the rear side of the pad 303 for being formed at each device 302
304。
In addition, in above-mentioned perforation process, in the interval a-quadrant and interval B regions and Fig. 6 of X-direction in figure 6
The interval C regions of Y direction and interval D region, not to 30 irradiated with pulse laser light of semiconductor wafer.So, in order to not right
30 irradiated with pulse laser light of semiconductor wafer, deflection angle adjustment member of the above-mentioned control member 20 to audio-optical deflection component 7
74 voltages for applying 0V.Its result is the RF for applying frequency corresponding with 0V to acousto-optic element 71, is vibrated from pulse laser light
The pulse laser light that the vibration of component 6 sends（LB）Laser beam absorption component 76 is directed to as shown in phantom in Figure 2,
Therefore semiconductor wafer 30 will not be exposed to.
More than, described the present invention based on embodiment illustrated, but the present invention is not restricted to embodiment party
Formula, can carry out various modifications in the range of the purport of the present invention.For example, in the above-described embodiment, to following examples
It is illustrated：Chip is being formed at substrate（First component）Multiple devices on surface be equipped with pad respectively（Second
Part）, formed from substrate in the chip（First component）Rear side reach pad（Second component）Laser Processing hole, but
It is to can be widely applied in the second component engagement formed by the first component formed by the first material and by the second material
Into machined object formed from first component reach second component Laser Processing hole situation.
Claims (3)
1. a kind of laser processing, the laser processing is formed in the machined object being formed by connecting by substrate and pad
The laser processing in the Laser Processing hole of pad is reached from substrate, the substrate formed by the first material, the pad is by the
Two materials are formed, and the laser processing is characterised by,
Detect because of the wavelength of the plasma produced to substrate and pad irradiating laser light, only detecting with substrate first
Wavelength plasma light when proceed the irradiation of the pulse laser light with the first output forming through hole, in the case where connecing
To detect the plasma light of the wavelength with pad, want stop pulse laser being judged to that the pulse laser light is reached
Light irradiation so that not by the pad of insertion in the case of, irradiation predetermined pulse number with more defeated than described first
Stop after the pulse laser light for going out the second high output.
2. laser processing according to claim 1, it is characterised in that
The part for forming the substrate is made up of lithium tantalate,
The energy of each pulse of first output is set to 40 μ J, the energy of each pulse of second output
It is set to 80 μ J.
3. a kind of laser processing device, the laser processing device possess：Machined object holding member, the machined object keep
Component is used to keep machined object, the machined object to be formed by connecting by substrate and pad, and the substrate is formed by the first material,
The pad is formed by the second material；With laser light irradiation component, the laser light irradiation component is for being held in
The machined object irradiating laser light of machined object holding member is stated, the laser light irradiation component possesses：Laser beam shakes
Component is swung, the laser beam oscillating member sends laser beam for vibration；Output adjustment component, the output adjustment component
The output of the laser beam sent by laser beam oscillating member vibration for adjustment；And condenser, the condenser
Kept by the machined object for the laser beam optically focused after output being have adjusted by the output adjustment component and being exposed to
The machined object that component keeps, the laser processing device is characterised by,
The laser processing device possesses：Plasma detection means, the plasma detection means are used for detection by from described
The wavelength of the plasma that laser light irradiation component is produced to machined object irradiating laser light；And control member, the control
Component processed controls the laser light irradiation component based on the detection signal from the plasma detection means,
The plasma detection means possess：Beam splitter, the beam splitter is for being branched off into first path and by plasma light
Two paths；First band filter, first band filter are disposed in the first path, first band filter
Only pass through the wavelength of the plasma that the first material to form the substrate sends；First photodetector, the first light detection
Device is used to receive the light after first band filter and to the control member output light intensity signal；Second band logical
Wave filter, second band filter are disposed in second path, and second band filter only makes to form the weldering
The wavelength of the plasma that the second material of disk sends passes through；And second photodetector, second photodetector is used to receive
Light after second band filter to the control member output light intensity signal,
The control member controls the laser light irradiation component in the following manner：Make the laser light irradiation component work
Make and the substrate irradiated with pulse laser light is implemented from the substrate reach the Laser Processing of the pad when, based on from
First photodetector and the light intensity signal of second photodetector output, are only exporting from first photodetector
When having light intensity signal, the output adjustment component is controlled in the way of reaching the first output and proceeds pulse laser light
Irradiation forming through hole, outputing light intensity signal, be judged to the pulsed laser light from second photodetector
Line reach want stop pulse laser beam irradiation so that not by the pad of insertion in the case of, to reach than described
The mode of the second high output of the first output controls the output adjustment component, and in the pulsed laser light of irradiation predetermined pulse number
Stop after line.
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| JP2012-053616 | 2012-03-09 | ||
| JP2012053616A JP6034030B2 (en) | 2012-03-09 | 2012-03-09 | Laser processing method and laser processing apparatus |
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| CN103302411B true CN103302411B (en) | 2017-04-12 |
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| JP (1) | JP6034030B2 (en) |
| KR (1) | KR102028206B1 (en) |
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| KR101682269B1 (en) * | 2013-09-25 | 2016-12-05 | 주식회사 엘지화학 | Laser Cutting apparatus and cutting method of the same |
| JP6682146B2 (en) * | 2016-12-12 | 2020-04-15 | 住友重機械工業株式会社 | Laser pulse cutting device and laser processing method |
| JP2020066015A (en) | 2018-10-23 | 2020-04-30 | 株式会社ディスコ | Laser processing method |
| JP7239298B2 (en) | 2018-10-23 | 2023-03-14 | 株式会社ディスコ | Laser processing method |
| JP2020066045A (en) | 2018-10-26 | 2020-04-30 | 株式会社ディスコ | Laser processing method |
| JP7404043B2 (en) * | 2019-03-22 | 2023-12-25 | ビアメカニクス株式会社 | Laser processing equipment and laser processing method |
| KR102522756B1 (en) * | 2021-12-28 | 2023-04-19 | 주식회사 아이티아이 | Processing apparatus and method using multi lasers |
| JP2024002189A (en) | 2022-06-23 | 2024-01-11 | 株式会社ディスコ | Laser machining device |
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|---|---|
| CN103302411A (en) | 2013-09-18 |
| KR102028206B1 (en) | 2019-10-02 |
| JP2013184213A (en) | 2013-09-19 |
| TW201400219A (en) | 2014-01-01 |
| TWI597118B (en) | 2017-09-01 |
| JP6034030B2 (en) | 2016-11-30 |
| KR20130103357A (en) | 2013-09-23 |
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