CN106876514A - Vacuum semiconductor hybrid optical electric explorer - Google Patents
Vacuum semiconductor hybrid optical electric explorer Download PDFInfo
- Publication number
- CN106876514A CN106876514A CN201611178930.1A CN201611178930A CN106876514A CN 106876514 A CN106876514 A CN 106876514A CN 201611178930 A CN201611178930 A CN 201611178930A CN 106876514 A CN106876514 A CN 106876514A
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- China
- Prior art keywords
- focusing
- semiconductor
- photocathode
- hybrid optical
- optical electric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 230000003287 optical effect Effects 0.000 title claims abstract description 22
- 239000000919 ceramic Substances 0.000 claims abstract description 15
- 238000009413 insulation Methods 0.000 claims abstract description 10
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000004044 response Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 2
- 230000008569 process Effects 0.000 abstract description 2
- 238000001228 spectrum Methods 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Abstract
The invention discloses a kind of vacuum semiconductor hybrid optical electric explorer, including input light window, photocathode, ceramic ring, focusing arrangement, semiconductor detector, anode base and signal output apparatus；Photocathode is fixed on input light window, semiconductor detector is fixed on signal output apparatus, signal output apparatus are fixed on anode base, the middle setting of photocathode and semiconductor detector has focusing arrangement, and all by ceramic ring command range and insulation is realized between input light window and focusing arrangement and between focusing arrangement and anode base.Hybrid optical electric explorer of the invention organically combines vacuum device and semiconductor devices, with detecting, photosensitive area is big, response spectrum is flexible, fast response time, dynamic range are big, high gain, the low advantage of dark counting, and it is high to process simple, easy to assembly, low cost, reliability.
Description
Technical field
The present invention relates to a kind of photodetector, more particularly to a kind of vacuum-semiconductor hybrid optical electric explorer.
Background technology
Photodetection is with a wide range of applications and huge strategic value, as the technology neck that various countries greatly develop
Domain.In numerous photodetectors, hybrid optical electric explorer is a kind of novel photoelectric that the nineties in 20th century grows up
Detector, has merged the advantage of vacuum photoelectric device and semiconductor photoelectric device, compensate for both shortcomings and deficiency, extensively should
For fields such as high-energy physics, Medical Instruments, biological detection, quantum communications, astronomical observation and laser rangings.
The homogeneous tube of hybrid optical electric explorer uses the metal-ceramic structure of vacuum photoelectric device, and negative electrode uses vacuum
The photocathode of part, anode is semiconductor detector.The accelerated rear bombardment of photoelectron produced on photocathode during work is half
The surface of conductor material, produces the gain of thousands of times, bombards the electron-hole pair for producing and is collected by the interface of semiconductor detector
After realize signal output.Therefore, hybrid optical electric explorer has had that vacuum device photosensitive area is big, sensitivity is high, response is fast concurrently
Degree is fast, low noise, high gain and semiconductor devices dynamic range it is big, it is low in energy consumption the advantages of.
The problems such as hybrid device generally existing detection area both domestic and external is small, device architecture is not general at present, portion big absolutely
The hybrid device for dividing all is provided without electron-optical system or the electron-optical system reduction magnification of use is relatively low, it is impossible to meet
The detection demand of wide area, and these device architectures are customization, it is impossible to partly led suitable for different photocathodes, difference
The need for bulk detector type.
The content of the invention
Goal of the invention：For problem above, the present invention proposes a kind of vacuum-semiconductor hybrid optical electric explorer.
Technical scheme：To realize the purpose of the present invention, the technical solution adopted in the present invention is：A kind of vacuum-semiconductor
Hybrid optical electric explorer, including input light window, photocathode, ceramic ring, focusing arrangement, semiconductor detector, anode base
And signal output apparatus；Photocathode is fixed on input light window, and semiconductor detector is fixed on signal output apparatus, signal
Output device is fixed on anode base, and the middle setting of photocathode and semiconductor detector has focusing arrangement, input light window
Pass through ceramic ring command range between focusing arrangement and realize insulation, ceramic ring control is passed through between focusing arrangement and anode base
System distance simultaneously realizes insulation.
Focusing arrangement includes focusing electrode one, focusing electrode two, focusing electrode three and focuses on polar cap；It is focusing electrode one, poly-
Burnt electrode two and focusing electrode three use cirque structure, the internal diameter of focusing electrode one, focusing electrode two and focusing electrode three according to
Secondary reduction, the voltage applied during work increases successively, and ceramic ring command range is passed through between three focusing electrodes and insulation is realized,
Polar cap is focused on to be fixed on focusing electrode three.Focus on the 1/7~1/4 of the diameter of a diameter of photocathode of polar cap.
Signal output apparatus include spun gold, draw pin and draw pin pedestal；Semiconductor detector is connected to draw pin by spun gold, and half
The signal that conductor detector receives realizes signal output by draw pin and draw pin pedestal.
The size of semiconductor detector is less than photocathode.
Beneficial effect：The photodetection of the achievable different-waveband of the present invention；Using multi-focus structure, centre is using pottery
Porcelain insulating, substantially, the photoelectron that will effectively can be produced on photocathode converges to the less semiconductor of size to focusing effect
On detector, the useful detection area of hybrid optical electric explorer is drastically increased；Output form is flexible, and can be to gain
It is adjusted.Photodetector of the invention has that detection photosensitive area is big, device architecture versatility is high, response spectrum flexibly,
The advantages of high gain, dark counting are low, dynamic range is big, and it is high to process simple, easy to assembly, low cost, reliability.
Brief description of the drawings
Fig. 1 is vacuum of the present invention-semiconductor hybrid optical electric explorer structural representation.
Specific embodiment
Technical scheme is further described with reference to the accompanying drawings and examples.
It is as shown in Figure 1 vacuum of the present invention-semiconductor hybrid optical electric explorer, including photocathode 2 and makees
It is the semiconductor detector 9 of anode, also including focusing arrangement and signal output apparatus.The photoelectron that photocathode 2 is produced passes through
Focusing arrangement is focused on after accelerating and bombarded on semiconductor detector 9, produces the gain of thousands of times, the electron-hole pair quilt of generation
Semiconductor detector 9 is collected, and then realizes signal output by signal output apparatus.Semiconductor detector 9 as anode compares
The size of photocathode 2 is small, can be very good to improve the useful detection area of photodetector, improves bombardment gain, makes signal
Intensity doubles.The photocathode 2 of the vacuum-semiconductor hybrid optical electric explorer can respond purple for realizing opto-electronic conversion
Outward, visible or infrared band, it is possible to achieve the photodetection to different-waveband.Semiconductor detector 9 can use PN junction photoelectricity
Diode, PIN junction photodiode or avalanche photodide, output form flexibly, and can be adjusted to gain.
The primary structure of vacuum-semiconductor hybrid optical electric explorer includes：Input light window 1, photocathode 2, ceramic ring
3rd, focusing arrangement, spun gold 8, semiconductor detector 9, anode base 10, draw pin 11 and draw pin pedestal 12.Photocathode 2 is fixed on
On input light window 1, semiconductor detector 9 is fixed on draw pin pedestal 12, and the electrode of semiconductor detector 9 is utilized by spun gold 8
Ultrasonic bond is connected to draw pin 11, and draw pin 11 and draw pin pedestal 12 are each attached on anode base 10, spun gold 8, draw pin 11 and draws
Pin pedestal 12 constitutes signal output apparatus, and the signal that semiconductor detector 9 receives realizes letter by draw pin 11 and draw pin pedestal 12
Number output.The middle setting of photocathode 2 and semiconductor detector 9 has focusing arrangement, leads between input light window 1 and focusing arrangement
Cross the command range of ceramic ring 3 and realize insulation, the command range of ceramic ring 3 is passed through between focusing arrangement and anode base 10 and is realized
Insulation.
Focusing arrangement includes focusing electrode 1, focusing electrode 25, focusing electrode 37 and focuses on polar cap 6, focusing electrode one
4th, focusing electrode 25 and focusing electrode 37 use cirque structure, focusing electrode 1, focusing electrode 25 and focusing electrode 37
Be arranged in order from top to bottom, internal diameter is reduced successively, the voltage applied during work increases step by step, between three focusing electrodes also by
Distance between the coordination electrode of ceramic ring 3 simultaneously realizes insulation.Focus on polar cap 6 to be fixed on focusing electrode 37, help photoelectron aggregation
Semiconductor detector 9 is arrived at by focusing electrode 37.Focus on the 1/7~1/4 of the diameter of a diameter of photocathode 2 of polar cap 6.
Fixation in whole vacuum-semiconductor hybrid optical electric explorer between each part can be by soldering or other welding manner realities
Existing, realization meets the sealing of vacuum level requirements.
Claims (6)
1. a kind of vacuum-semiconductor hybrid optical electric explorer, it is characterised in that：Including input light window (1), photocathode (2),
Ceramic ring (3), focusing arrangement, semiconductor detector (9), anode base (10) and signal output apparatus；Wherein, photocathode
(2) it is fixed on input light window (1), semiconductor detector (9) is fixed on signal output apparatus, and signal output apparatus are fixed on
On anode base (10), the middle setting of photocathode (2) and semiconductor detector (9) has a focusing arrangement, input light window (1) with
Pass through ceramic ring (3) command range between focusing arrangement and realize insulation, by pottery between focusing arrangement and anode base (10)
Ceramic ring (3) command range simultaneously realizes insulation.
2. vacuum according to claim 1-semiconductor hybrid optical electric explorer, it is characterised in that：The focusing arrangement
Including focusing electrode one (4), focusing electrode two (5), focusing electrode three (7) and focusing polar cap (6)；Focusing electrode one (4), focusing
The internal diameter of electrode two (5) and focusing electrode three (7) is reduced successively, and the voltage applied during work increases successively, three focusing electrodes
Between by ceramic ring (3) command range and realize insulation, focus on polar cap (6) be fixed on focusing electrode three (7).
3. vacuum according to claim 2-semiconductor hybrid optical electric explorer, it is characterised in that：Focusing electrode one
(4), focusing electrode two (5) and focusing electrode three (7) use cirque structure.
4. vacuum according to claim 2-semiconductor hybrid optical electric explorer, it is characterised in that：Focus on polar cap (6)
The 1/7~1/4 of the diameter of a diameter of photocathode (2).
5. vacuum according to claim 1-semiconductor hybrid optical electric explorer, it is characterised in that：The signal output
Device includes spun gold (8), draw pin (11) and draw pin pedestal (12)；Semiconductor detector (9) is connected to draw pin by spun gold (8)
(11) signal that, semiconductor detector (9) receives realizes signal output by draw pin (11) and draw pin pedestal (12).
6. vacuum according to claim 1-semiconductor hybrid optical electric explorer, it is characterised in that：Semiconductor detector
(9) size is less than photocathode (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611178930.1A CN106876514A (en) | 2016-12-19 | 2016-12-19 | Vacuum semiconductor hybrid optical electric explorer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611178930.1A CN106876514A (en) | 2016-12-19 | 2016-12-19 | Vacuum semiconductor hybrid optical electric explorer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106876514A true CN106876514A (en) | 2017-06-20 |
Family
ID=59164752
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611178930.1A Pending CN106876514A (en) | 2016-12-19 | 2016-12-19 | Vacuum semiconductor hybrid optical electric explorer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106876514A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108428761A (en) * | 2018-03-19 | 2018-08-21 | 西北核技术研究所 | Hundred times of gain photo-detectors of high current based on SiC wide bandgap semiconductor detectors |
| CN109980339A (en) * | 2018-12-28 | 2019-07-05 | 北京航空航天大学 | A kind of array pulse THz source and its manufacturing method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5475227A (en) * | 1992-12-17 | 1995-12-12 | Intevac, Inc. | Hybrid photomultiplier tube with ion deflector |
| EP0820089A1 (en) * | 1996-07-16 | 1998-01-21 | Hamamatsu Photonics K.K. | Electron tube |
| DE69328818T2 (en) * | 1992-12-17 | 2000-10-19 | Intevac Inc | Hybrid photomultiplier tube with high sensitivity |
| JP2007184119A (en) * | 2006-01-04 | 2007-07-19 | Hamamatsu Photonics Kk | Electron tube |
| US20080265768A1 (en) * | 2007-04-26 | 2008-10-30 | Dept Of Navy | Gating large area hybrid photomultiplier tube |
| CN104733272A (en) * | 2015-03-26 | 2015-06-24 | 中国电子科技集团公司第五十五研究所 | Electron-optical system used for hybrid photoelectric detector |
-
2016
- 2016-12-19 CN CN201611178930.1A patent/CN106876514A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5475227A (en) * | 1992-12-17 | 1995-12-12 | Intevac, Inc. | Hybrid photomultiplier tube with ion deflector |
| DE69328818T2 (en) * | 1992-12-17 | 2000-10-19 | Intevac Inc | Hybrid photomultiplier tube with high sensitivity |
| EP0820089A1 (en) * | 1996-07-16 | 1998-01-21 | Hamamatsu Photonics K.K. | Electron tube |
| JP2007184119A (en) * | 2006-01-04 | 2007-07-19 | Hamamatsu Photonics Kk | Electron tube |
| US20080265768A1 (en) * | 2007-04-26 | 2008-10-30 | Dept Of Navy | Gating large area hybrid photomultiplier tube |
| CN104733272A (en) * | 2015-03-26 | 2015-06-24 | 中国电子科技集团公司第五十五研究所 | Electron-optical system used for hybrid photoelectric detector |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108428761A (en) * | 2018-03-19 | 2018-08-21 | 西北核技术研究所 | Hundred times of gain photo-detectors of high current based on SiC wide bandgap semiconductor detectors |
| CN109980339A (en) * | 2018-12-28 | 2019-07-05 | 北京航空航天大学 | A kind of array pulse THz source and its manufacturing method |
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| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170620 |
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| RJ01 | Rejection of invention patent application after publication |