CN110487757A - The ultrafast imaging detector of inverted image formula image intensifying type - Google Patents
The ultrafast imaging detector of inverted image formula image intensifying type Download PDFInfo
- Publication number
- CN110487757A CN110487757A CN201910688741.6A CN201910688741A CN110487757A CN 110487757 A CN110487757 A CN 110487757A CN 201910688741 A CN201910688741 A CN 201910688741A CN 110487757 A CN110487757 A CN 110487757A
- Authority
- CN
- China
- Prior art keywords
- focusing electrode
- electrostatic focusing
- imaging detector
- semiconductor
- ultrafast imaging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 54
- 239000000523 sample Substances 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims description 27
- 230000004044 response Effects 0.000 claims description 18
- 239000004411 aluminium Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 239000011195 cermet Substances 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 238000000407 epitaxy Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000008054 signal transmission Effects 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 2
- 238000001155 isoelectric focusing Methods 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 description 9
- 238000012631 diagnostic technique Methods 0.000 description 6
- 238000009432 framing Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000010406 cathode material Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000008358 core component Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 239000004831 Hot glue Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001149 cognitive effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000799 fluorescence microscopy Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000000280 vitalizing effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6408—Fluorescence; Phosphorescence with measurement of decay time, time resolved fluorescence
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
Landscapes
- Health & Medical Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The present invention relates to a kind of ultrafast imaging detector of inverted image formula image intensifying type, the problem of semiconductor chip is easy vacuum breakdown in existing double close-up structure is overcome.The detector includes shell, input window, output window, photocathode, the first electrostatic focusing electrode, microchannel plate, the second electrostatic focusing electrode and semiconductor probe chip；The both ends of shell are respectively arranged with input window and output window；Input window inner surface is coated with layer of conductive film, and photocathode is made on conductive film；Semiconductor probe chip is close to the setting of output window inner surface；The first electrostatic focusing electrode, microchannel plate and the second electrostatic focusing electrode are disposed between photocathode and semiconductor probe chip；First electrostatic focusing electrode and the second electrostatic focusing electrode are identical；The input face of microchannel plate and output face load operating voltage.
Description
Technical field
The present invention relates to ultrafast diagnostic techniques fields, and in particular to a kind of ultrafast imaging detector of inverted image formula image intensifying type.
Background technique
The development of ultrafast diagnostic techniques is to the energy, material, biology, optical physics, photochemistry, strong optical physics and high-energy physics etc.
The research in field has extremely important scientific meaning, is the necessary condition that the mankind expand cognitive domain, obtain original innovation.With
The instrument and equipment that ultrafast diagnostic techniques is associated is the indispensable research tool and means of front line science and hard-core technology field.
Traditional high speed diagnostic device includes high speed image intensifying CCD, high speed gate framing camera, travelling wave gating framing phase
Machine, streak camera etc..
Wherein, the time resolution of one-dimensional picosecond, even femtosecond magnitude may be implemented in streak camera；Travelling wave gating type framing phase
Machine charges pulse gate by microstrip line, tens to hundred picoseconds of time resolution may be implemented, but can only respond X-ray, limits
The application of the technology is made；Ultra-fast electrical pulse of the high speed gate framing camera by load on cathode, realizes nanosecond order
The ultrashort time for exposure, but it is limited by the limitation of CCD pixel charge readout time, it often can only achieve under the conditions of complete differentiate several
Ten frames reading speed per second.
The complete ultrafast diagnostic techniques of light solid be it is a kind of completely new based on the ultrafast variation variation characteristic of semiconductor refractive index, can
Realize several picoseconds even time resolution of hundred femtoseconds.It can be realized the superelevation time in conjunction with ordered spaces framing technology when full light
The more frame imagings differentiated.But the shortcomings that technology is that detectivity is low, and by taking InP material as an example, signal light-wave is a length of
532nm, when system time resolution reaches 1ps, the corresponding signal light power of the sensitivity of system is 1.3 × 105W/cm2.Therefore pole
Big limits the application field of the complete ultrafast diagnostic techniques of light solid.
Chinese patent, the patent No. 201810107156 disclose a kind of complete ultrafast imaging detector of light solid of image intensifying type,
The detector has that spatial resolution is not high；And since structure is complicated for semiconductor chip surface, can draw in a vacuum
Play point discharge, thus seriously reduce the second nearly patch distance (i.e. between the ultrafast detection chip of microchannel plate and semiconductor away from
From) driving voltage that can load so that the electron energy of incident semiconductor chip is lower causes the gain of imaging system not high
The problem of, it is unable to satisfy the detection imaging demand of some faint ultrafast signals.
Summary of the invention
The present invention combines cascade inverted image to decline light image enhancing technology and the complete ultrafast diagnostic techniques of light solid, overcomes existing
Semiconductor chip is easy the problem of vacuum breakdown in double close-up structure, has given full play to the electron multiplication energy of MCP (microchannel plate)
The advantage of the ultrafast time response of power and the ultrafast detection chip of semiconductor, has provided one kind and has had both high time-space resolution and high-gain
The ultrafast imaging detector of inverted image formula image intensifying type.
The specific technical solution of the present invention is:
The present invention provides a kind of ultrafast imaging detectors of inverted image formula image intensifying type, including shell, input window, output window
Mouth, photocathode, the first electrostatic focusing electrode, microchannel plate, the second electrostatic focusing electrode and semiconductor probe chip；
The both ends of shell are respectively arranged with input window and output window；
Input window inner surface is coated with layer of conductive film, and photocathode is made on conductive film；
Semiconductor probe chip is close to the setting of output window inner surface；
The first electrostatic focusing electrode, microchannel plate and are disposed between photocathode and semiconductor probe chip
Two electrostatic focusing electrodes；First electrostatic focusing electrode and the second electrostatic focusing electrode are identical；
The input face of microchannel plate and output face load operating voltage.
The basic functional principle of the structure is:
The ultrafast radiation image of low-light level is converted to electronic image by photocathode, the response spectrum range of photocathode with
The photoelectric cathode materials of selection are related.First electrostatic focusing electrode forms axisymmetric accelerating field inside the shell, and electronics is at this
The effect assembled and accelerated in a field, by Electron optics design, which can play the role of electron lens, and
The electronic image of handstand is formed on microchannel plate.Electronic image by handstand passes through the convergence of the second electrostatic focusing electrode and adds
Speed effect, finally forms upright high energy electron image on semiconductor probe chip.
Further, above-mentioned first electrostatic focusing electrode and the second electrostatic focusing electrode are double cylindrical structures or double sphere knots
Structure.
Further, above-mentioned semiconductor probe chip includes the modulated grating set gradually along signal transmission direction, aluminium film,
Semiconductor super fast response material and anti-reflection film.
Further, above-mentioned modulated grating uses metal material, and screen periods select 50~100lp/mm, and grating is closeer,
Chip space resolution capability is higher；Grating thickness is greater than 800nm and makes for modulating the electronic image after being doubled by microchannel plate
It obtains part electronics to be blocked in except semiconductor responsive materials, enables and partly led into the high energy electron for injecting semiconductor material
Internal portion forms phase grating.
Further, above-mentioned aluminium film plays electric action with a thickness of 100~200nm, for shifting anode accumulation electronics,
And the reflecting layer as detection light.
Further, above-mentioned semiconductor super fast response material 13 is selected using GaAs of low-temperature epitaxy growth etc. with ultrashort
Nonequilibrium carrier lifetime, compared with the semiconductor material of intense radiation refraction index changing effect.
Further, above-mentioned shell is made of cermet.
Further, above-mentioned semiconductor super fast response material thickness is 5 μm.
Further, above-mentioned shell is made of cermet.
Further, above-mentioned photocathode can be according to the material of signal light wave band Response to selection, with a thickness of 3~5mm；It leads
Conductive film with a thickness of 100nm.
Further, above-mentioned microchannel plate 3 can be with multiplied electron quantity, can by adjusting the operating voltage of microchannel plate
To change gain size, while can be constituted using monolithic or multi-disc.
The beneficial effects of the present invention are:
1. the present invention uses the first electrostatic focusing electrode, microchannel plate, the second electrostatic focusing electrode and semiconductor probe core
Core component of the piece as detector, the core component combine the electronic signal high-gain of low-light image intensifying technology
The high time resolution characteristic of characteristic and the complete ultrafast detection chip of light solid, may be implemented the high time resolution under low light condition at
Picture can be applied to the fields such as fluorescence imaging and fluorescence lifetime imaging；
2. the present invention in conjunction with the ultrafast imager chip of semiconductor, is avoided using the electrostatic focusing electron-optical system of tandem type
The potential vacuum breakdown risk that semiconductor chip surface micro-structure introduces compared to double close-up structure there is higher electronics to enter
Energy and Spatial resolution are penetrated, can further improve the detectivity and space-time of the ultrafast detector of image intensifying type semiconductor
Resolution characteristic.
Detailed description of the invention
Fig. 1 is the ultrafast imaging detector structure of inverted image formula image intensifying type；
Fig. 2 is semiconductor probe Chip Structure Details schematic diagram；
Appended drawing reference is as follows:
1- photocathode, 2- the first electrostatic focusing electrode, 3- microchannel plate, 4- the second electrostatic focusing electrode, 5- semiconductor
Ultrafast detection chip, the faint ultrafast signal pattern of 6-, the ultrashort photoelectronic pulse image of 7-, the electronic image after 8- multiplication, 9- are visited
Survey light, 10- diffraction light, 11- modulated grating, 12- aluminium film, 13- semiconductor super fast response material, 14- anti-reflection film, 15- phase light
Grid, 16- shell, 17- input window, 18- output window.
Specific embodiment
To keep the purpose of the present invention, advantages and features clearer, below in conjunction with the drawings and specific embodiments to the present invention
The ultrafast imaging detector of a kind of inverted image formula image intensifying type proposed is described in further detail.According to following explanation and claim
Book, advantages and features of the invention will become apparent from.It should be understood that attached drawing is all made of very simplified form and using non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention；Secondly, the structure that attached drawing is shown
Often a part of practical structures；Again, the emphasis that each attached drawing needs to show is different, uses different ratios sometimes.
The ultrafast imaging detector specific structure of inverted image formula image intensifying type provided in this embodiment is referring to Fig. 1: specifically including outer
Shell 16, input window 17, output window 18, photocathode 1, the first electrostatic focusing electrode 2, microchannel plate 3, the second electrostatic focusing
Electrode 4 and semiconductor probe chip 5；The both ends of shell 16 are respectively arranged with input window 17 and output window 18；Input window
17 inner surfaces of mouth are coated with layer of conductive film, and photocathode 1 is made on conductive film；Semiconductor probe chip 5 is close to output
The setting of 18 inner surface of window；The first electrostatic focusing electrode 2, micro- is disposed between photocathode 1 and semiconductor probe chip 5
Channel plate 3 and the second electrostatic focusing electrode 4；First electrostatic focusing electrode 2 and the second electrostatic focusing electrode 4 are identical；Microchannel
The input face of plate 3 and output face load operating voltage.
More specifically:
Shell 16 is made of cermet in the present embodiment, and High-Temperature Mo-manganese method manufacture craft can be used.Interior of shell position
Vacuum environment.
Input window thickness is advisable in 3~5mm in the present embodiment.Input window inner surface is coated with layer of conductive film, can
Using aluminium or silver, thickness is advisable in 100nm or so.The effect of conductive film is mainly that photocathode 1 supplements electronics.Photoelectricity yin
Pole 1 is made on conductive film, the signal light of different photoelectric cathode materials response different-wavebands, such as Bialkali photocathode, can be with
The signal light of 300nm -650nm wave band is responded, MgF can be used in UV signal light2Or GaF2Make photocathode 1；Visible light wave
Pyrex production photocathode 1 can be used in section.
By the suitable first electrostatic focusing electricity of Electron optics design between photocathode 1 and microchannel plate 3 in the present embodiment
Usually there are double cylindrical structures or double sphere mechanisms in pole 2, so that electronic image focuses on shape on microchannel plate 3 by specific electric field
At the real image of handstand.
Microchannel plate 3 uses planar structure in the present embodiment, one or more pieces microchannels can be selected according to gain requirement
Plate.When work, microchannel plate input, output face load 800 voltages for arriving 1000V.
It is used and 2 phase of the first electrostatic focusing electrode between microchannel plate 3 and the ultrafast detection chip 5 of semiconductor in the present embodiment
The second same electrostatic focusing electrode 4, the second electrostatic focusing electrode 4 make the electronic image of the handstand after multiplication in semiconductor chip
At upright real image on 5.The final energy of electronics can increase in 15KeV or more, can be effectively non-equilibrium in vitalizing semiconductor
Carrier.
As shown in Fig. 2, semiconductor probe chip 5 includes the modulation light set gradually along signal transmission direction in the present embodiment
Grid 11, aluminium film 12, semiconductor super fast response material 13 and anti-reflection film 14.
The GaAs material of low-temperature epitaxy growth can be used in semiconductor super fast response material 13, which has ultrafast current-carrying
Sub- recombination rate, nonequilibrium carrier lifetime can reach picosecond magnitude.The semiconductor super fast response material 13 of epitaxial growth is thick
Degree plates one layer of anti-reflection film 14 at 5 μm or so, on 13 surface of semiconductor super fast response material, and hot melt adhesive and output window is interior
Then the substrate of semiconductor super fast response material 13 is removed, plates the conductive layer of one layer of 200nm or so on the surface of the material by surface
(aluminium film is used in the present embodiment), and modulated grating 11 is made in aluminium film, the period is 50~80lp/mm.
The specific working principle is as follows for the present embodiment detector:
The faint ultrafast signal pattern 6 of objective emission, converges on photocathode 1 through optical system, is sent out by photocathode 1
Ultrashort photoelectronic pulse image 7 is penetrated, converges in the picture on microchannel plate 3 at handstand by the second electrostatic focusing electrode 2, electronics exists
Double in microchannel plate 3, the electronic image 8 after forming multiplication is bombarded using the focusing of the second electrostatic focusing electrode 4 and after accelerating
Onto the ultrafast detection chip 5 of semiconductor, the metal grating 11 on chip is modulated incident electron beam pulse, part electronics quilt
It is blocked in outside semiconductor material, enters the high energy electron injected inside semiconductor material and more non-equilibrium current-carrying are gone out by collision excitation
Son, thus the formation instantaneous phase grating 15 inside semiconductor material, 15 duration of instantaneous phase grating and semiconductor
Carrier lifetime is related, and the diffracted intensity of instantaneous phase grating 15 is related with incident electron intensity.When signal is read, light 9 is detected
It is passed through from output window incidence, output window, anti-reflection film 14, semiconductor super fast response material 13 is crossed, finally by semiconductor material table
The aluminium film 12 in face is reflected by former road, while signal light intensity information is carried in the diffraction light 10 of phase grating 15, thus
Realize the detection of faint ultrafast signal light 6.
It should be noted last that foregoing description is only the description to present pre-ferred embodiments, not to model of the present invention
Any restriction enclosed, any change, the modification that field those of ordinary skill of the present invention does according to the disclosure above content, belongs to weigh
The protection scope of sharp claim.
Claims (10)
1. a kind of ultrafast imaging detector of inverted image formula image intensifying type, it is characterised in that: including shell, input window, output window,
Photocathode, the first electrostatic focusing electrode, microchannel plate, the second electrostatic focusing electrode and semiconductor probe chip；
The both ends of shell are respectively arranged with input window and output window；
Input window inner surface is coated with layer of conductive film, and photocathode is made on conductive film；
Semiconductor probe chip is close to the setting of output window inner surface；
It is quiet that the first electrostatic focusing electrode, microchannel plate and second are disposed between photocathode and semiconductor probe chip
Electrofocusing's electrode；First electrostatic focusing electrode and the second electrostatic focusing electrode are identical；
The input face of microchannel plate and output face load operating voltage.
2. the ultrafast imaging detector of inverted image formula image intensifying type according to claim 1, it is characterised in that: first electrostatic
Focusing electrode and the second electrostatic focusing electrode are double cylindrical structures or double sphere structures.
3. the ultrafast imaging detector of inverted image formula image intensifying type according to claim 2, it is characterised in that: the semiconductor is visited
Surveying chip includes the modulated grating set gradually along signal transmission direction, aluminium film, semiconductor super fast response material and anti-reflection film.
4. the ultrafast imaging detector of inverted image formula image intensifying type according to claim 3, it is characterised in that: the modulated grating
Using metal material, screen periods select 50~100l p/mm.
5. the ultrafast imaging detector of inverted image formula image intensifying type according to claim 4, it is characterised in that: the aluminium film thickness
For 100~200nm.
6. the ultrafast imaging detector of inverted image formula image intensifying type according to claim 5, it is characterised in that: the semiconductor is super
Fast-response material uses the GaAs material of low-temperature epitaxy growth.
7. the ultrafast imaging detector of inverted image formula image intensifying type according to claim 6, it is characterised in that: the semiconductor is super
Fast-response material thickness is 5 μm.
8. the ultrafast imaging detector of inverted image formula image intensifying type according to claim 7, it is characterised in that: the shell uses
Cermet production.
9. the ultrafast imaging detector of inverted image formula image intensifying type according to claim 8, it is characterised in that: the photocathode
It can be according to the material of signal light wave band Response to selection, with a thickness of 3~5mm；Conductive film with a thickness of 100nm.
10. the ultrafast imaging detector of inverted image formula image intensifying type according to claim 9, it is characterised in that: the microchannel
Plate is that monolithic or multi-disc are constituted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910688741.6A CN110487757A (en) | 2019-07-29 | 2019-07-29 | The ultrafast imaging detector of inverted image formula image intensifying type |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910688741.6A CN110487757A (en) | 2019-07-29 | 2019-07-29 | The ultrafast imaging detector of inverted image formula image intensifying type |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110487757A true CN110487757A (en) | 2019-11-22 |
Family
ID=68547633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910688741.6A Pending CN110487757A (en) | 2019-07-29 | 2019-07-29 | The ultrafast imaging detector of inverted image formula image intensifying type |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110487757A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020170594A (en) * | 2019-04-01 | 2020-10-15 | 浜松ホトニクス株式会社 | Ion detector |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1055624A (en) * | 1990-04-09 | 1991-10-23 | 机械电子工业部第二○五研究所 | Ray image intensifier |
| US20060197028A1 (en) * | 2003-04-10 | 2006-09-07 | Kengo Shibuya | Radiation detector |
| CN101404237A (en) * | 2008-09-01 | 2009-04-08 | 西安理工大学 | Image intensifier for improving detection performance of low-light level imaging system at normal temperature |
| CN101852859A (en) * | 2010-06-21 | 2010-10-06 | 西安理工大学 | Photon counter based on magnetic mirror and method for detecting photon |
| CN108254349A (en) * | 2018-02-02 | 2018-07-06 | 中国科学院西安光学精密机械研究所 | Image enhanced all-optical solid ultrafast imaging detector |
-
2019
- 2019-07-29 CN CN201910688741.6A patent/CN110487757A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1055624A (en) * | 1990-04-09 | 1991-10-23 | 机械电子工业部第二○五研究所 | Ray image intensifier |
| US20060197028A1 (en) * | 2003-04-10 | 2006-09-07 | Kengo Shibuya | Radiation detector |
| CN101404237A (en) * | 2008-09-01 | 2009-04-08 | 西安理工大学 | Image intensifier for improving detection performance of low-light level imaging system at normal temperature |
| CN101852859A (en) * | 2010-06-21 | 2010-10-06 | 西安理工大学 | Photon counter based on magnetic mirror and method for detecting photon |
| CN108254349A (en) * | 2018-02-02 | 2018-07-06 | 中国科学院西安光学精密机械研究所 | Image enhanced all-optical solid ultrafast imaging detector |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020170594A (en) * | 2019-04-01 | 2020-10-15 | 浜松ホトニクス株式会社 | Ion detector |
| JP7174663B2 (en) | 2019-04-01 | 2022-11-17 | 浜松ホトニクス株式会社 | ion detector |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Hirvonen et al. | Photon counting phosphorescence lifetime imaging with TimepixCam | |
| US20140239157A1 (en) | Bright source protection for low light imaging sensors | |
| EP0847600B1 (en) | Optoelectronically gated microstructure | |
| Ostankov et al. | A study of the new hemispherical 6-dynodes PMT from electron tubes | |
| ITRM950073A1 (en) | ULTRAVIOLET RADIATION DETECTOR IN THIN FILM, WITH HIGH SPECTRAL SELECTIVITY OPTION. | |
| CN101393052B (en) | Partial gating glimmer detector of image intensifier based on secondary generation inverted image at normal temperature | |
| CN110487757A (en) | The ultrafast imaging detector of inverted image formula image intensifying type | |
| US8193497B2 (en) | Near-infrared photodetectors, image sensors employing the same, and methods of manufacturing the same | |
| CN103196570B (en) | Measuring device of ultrafast optical pulse time wave form | |
| SK18512000A3 (en) | Planar electron emitter (PEE) | |
| Liu et al. | High-performance Cascaded surface-illuminated Ge-on-Si APD array | |
| CN207798271U (en) | A kind of time-of-flight measurement system based on microchannel plate gating technique | |
| CN202930351U (en) | High resolution infrared scan image converter tube | |
| CN207894829U (en) | Image enhanced all-optical solid ultrafast imaging detector | |
| US4868380A (en) | Optical waveguide photocathode | |
| CN108254349B (en) | Image enhancement type all-optical solid ultrafast imaging detector | |
| CN209133447U (en) | Scanning camera with electronic impulse alignment function | |
| CN101393053B (en) | Partial gating glimmer detector of image intensifier based on generation III proximity type at normal temperature | |
| CN111584333B (en) | Method for realizing high-speed multi-image and photoelectric imaging device | |
| Fu et al. | Proximity-gated X-ray framing camera with gain uniformity | |
| Chakaberia et al. | Time stamping of single optical photons with 10 ns resolution | |
| Tian et al. | 3-D Imaging Lidar Based on Miniaturized Streak Tube | |
| Tao | Photoelectronic Detectors | |
| CN114414041B (en) | Visible light and ray pulse detection method with picosecond order and solid stripe camera | |
| Nützel | Single-photon imaging using electron multiplication in vacuum |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20191122 |
|
| RJ01 | Rejection of invention patent application after publication |