CN106876493A - 一种石墨烯柔性薄膜太阳能电池 - Google Patents
一种石墨烯柔性薄膜太阳能电池 Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 129
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 118
- 239000010409 thin film Substances 0.000 title claims abstract description 46
- 239000010408 film Substances 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 46
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 30
- 239000000725 suspension Substances 0.000 claims description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 25
- 239000003638 chemical reducing agent Substances 0.000 claims description 21
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 20
- 239000000243 solution Substances 0.000 claims description 17
- 239000012153 distilled water Substances 0.000 claims description 15
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 150000001336 alkenes Chemical class 0.000 claims description 10
- 239000008119 colloidal silica Substances 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 10
- 229910021641 deionized water Inorganic materials 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 10
- 229910002804 graphite Inorganic materials 0.000 claims description 10
- 239000010439 graphite Substances 0.000 claims description 10
- 238000000227 grinding Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 10
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 claims description 10
- 238000007654 immersion Methods 0.000 claims description 10
- 238000003756 stirring Methods 0.000 claims description 10
- 239000004575 stone Substances 0.000 claims description 10
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 5
- 239000004115 Sodium Silicate Substances 0.000 claims description 5
- AJVCUHHHRPBRHU-UHFFFAOYSA-N cadmium nitric acid Chemical compound [Cd].[N+](=O)(O)[O-] AJVCUHHHRPBRHU-UHFFFAOYSA-N 0.000 claims description 5
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 5
- 238000011010 flushing procedure Methods 0.000 claims description 5
- FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 claims description 5
- 239000011259 mixed solution Substances 0.000 claims description 5
- 239000011734 sodium Substances 0.000 claims description 5
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- 235000019795 sodium metasilicate Nutrition 0.000 claims description 5
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 5
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 2
- 238000012856 packing Methods 0.000 claims description 2
- 238000003912 environmental pollution Methods 0.000 abstract description 3
- 239000004831 Hot glue Substances 0.000 description 3
- ZTQSAGDEMFDKMZ-UHFFFAOYSA-N Butyraldehyde Chemical compound CCCC=O ZTQSAGDEMFDKMZ-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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Abstract
一种石墨烯柔性薄膜太阳能电池,主要包括:上基底层、石墨烯正电极层、光伏薄膜层、石墨烯负电极层和下基底层;石墨烯正电极层附着在上基底层上、石墨烯负电极层附着在下基底层上,中间为光伏薄膜层,一种石墨烯柔性薄膜太阳能电池,工艺简单,不会造成环境污染,成本低廉。
Description
技术领域
在本发明属于太阳能发电领域,尤其涉及一种石墨烯柔性薄膜太阳能电池。
背景技术
在CIGS柔性薄膜电池,由于其可弯曲,便于运输携带等特点,已经日益广泛的应用在太阳能发电领域,但是这种柔性薄膜电池,生产工艺复杂,对设备要求高,尤其是柔性基板的耐温性差,使得柔性薄膜电池的制备成本高,这大大限制了柔性薄膜电池特别是透明衬底柔性薄膜电池产业的发展,而且这种柔性薄膜太阳能电池的制备,容易造成环境污染,会对人体健康造成影响。
石墨烯是一种良好的导体,是一种二维碳原子晶体,有非常好的载流子迁移率,完全透明;它的出现,使人们又寻找到了在柔性薄膜太阳能电池中性能优异的电极材料。
发明内容
在为了克服上述传统柔性薄膜太阳能电池存在的技术不足,本发明提出了一种石墨烯柔性薄膜太阳能电池,降低生产成本,保护生态环境。
一种石墨烯柔性薄膜太阳能电池,主要包括:上基底层、石墨烯正电极层、光伏薄膜层、石墨烯负电极层和下基底层;石墨烯正电极层附着在上基底层上、石墨烯负电极层附着在下基底层上,中间为光伏薄膜层。
所述一种石墨烯柔性薄膜太阳能电池,其上基底层和下基底层为PI透明薄膜,为厚度为250微米;耐温为269℃~400℃。
所述一种石墨烯柔性薄膜太阳能电池,其石墨烯正电极层制作步骤如下:
(1)取氧化石墨研碎,按1mg/ml和去离子水配制悬浮液,超声处理1小时,得胶状氧化石墨烯悬浮液;
(2)缓慢加入还原剂NaOH、KOH 或水合肼,按照还原剂:氧化石墨烯=2~4:1,搅拌0.5小时,得石墨烯悬浮液;
(3)将上基底层浸入2分钟,缓慢提拉一次,晾干;
(4)放入加热炉加热至300℃,2分钟,得带石墨烯膜的基板;
(5)将带石墨烯膜的基板,浸入氯化金溶液20~30分钟,取出,用蒸馏水清洗,晾干,得一种石墨烯柔性薄膜太阳能电池的正极基板,其p型掺杂物的石墨烯膜厚为1纳米。
所述一种石墨烯柔性薄膜太阳能电池,其石墨烯负电极层制作步骤如下:
(1)取氧化石墨研碎,按1mg/ml和去离子水配制悬浮液,超声处理1小时,得胶状氧化石墨烯悬浮液;
(2)缓慢加入还原剂NaOH、KOH 或水合肼,按照还原剂:氧化石墨烯=2~4:1,搅拌0.5小时,得石墨烯悬浮液;
(3)将下基底层浸入2分钟,缓慢提拉一次,晾干;
(4)放入加热炉加热至300℃,2分钟,得带石墨烯膜的基板;
(5)将带石墨烯膜的基板,浸入o-MeO-DMBI 溶液 20~30分钟,取出,用蒸馏水清洗,晾干,得一种石墨烯柔性薄膜太阳能电池的负极基板,其N型掺杂物的石墨烯膜厚为1纳米。
所述一种石墨烯柔性薄膜太阳能电池,其光伏薄膜层制作步骤如下:
(1)将石墨烯正极基板,放入0.2mol/l的硅酸钠和0.1mol/l硫化钠混合溶液中浸泡一分钟,然后再置于0.1mol/l的硝酸镉溶液中反映5~10分钟;
(2)取出,用蒸馏水冲洗干净,晾干,得硫化镉光伏薄膜层,其厚度为1纳米。
所述一种石墨烯柔性薄膜太阳能电池,其封装方法是将一种石墨烯柔性薄膜太阳能电池的正极基板和负极基板,上下相对,用聚乙烯醇缩丁醛热熔粘合固定。
附图说明
图1为一种石墨烯柔性薄膜太阳能电池层结构示意图;
附图标记说明:1 上基底层 2石墨烯正电极层3光伏薄膜层4下基底层5石墨烯负电极层。
具体实施方式
一种石墨烯柔性薄膜太阳能电池,主要包括:上基底层1 、石墨烯正电极层2、光伏薄膜层3、下基底层4和石墨烯负电极层5。
实施例1
(1)取氧化石墨研碎,按1mg/ml和去离子水配制悬浮液,超声处理1小时,得胶状氧化石墨烯悬浮液;
(2)缓慢加入还原剂NaOH、KOH 或水合肼,按照还原剂:氧化石墨烯=2:1,搅拌0.5小时,得石墨烯悬浮液;
(3)将上基底层浸入2分钟,缓慢提拉一次,晾干;
(4)放入加热炉加热至300℃,2分钟,得带石墨烯膜的基板;
(5)将带石墨烯膜的基板,浸入氯化金溶液20分钟,取出,用蒸馏水清洗,晾干,得一种石墨烯柔性薄膜太阳能电池的正极基板,其p型掺杂物的石墨烯膜厚为0.8纳米;
(6)取氧化石墨研碎,按1mg/ml和去离子水配制悬浮液,超声处理1小时,得胶状氧化石墨烯悬浮液;
(7)缓慢加入还原剂NaOH、KOH 或水合肼,按照还原剂:氧化石墨烯=2:1,搅拌0.5小时,得石墨烯悬浮液;
(8)将下基底层浸入2分钟,缓慢提拉一次,晾干;
(9)放入加热炉加热至300℃,2分钟,得带石墨烯膜的基板;
(10)将带石墨烯膜的基板,浸入o-MeO-DMBI 溶液 20分钟,取出,用蒸馏水清洗,晾干,得一种石墨烯柔性薄膜太阳能电池的负极基板,其N型掺杂物的石墨烯膜厚为0.8纳米;
(11)将石墨烯正极基板,放入0.2mol/l的硅酸钠和0.1mol/l硫化钠混合溶液中浸泡一分钟,然后再置于0.1mol/l的硝酸镉溶液中反映10分钟;
(12)取出,用蒸馏水冲洗干净,晾干,得硫化镉光伏薄膜层,其厚度为0.8纳米;
(13)将一种石墨烯柔性薄膜太阳能电池的正极基板和负极基板,上下相对,用聚乙烯醇缩丁醛热熔粘合固定,得一种石墨烯柔性薄膜太阳能电池。
实施例2
(1)取氧化石墨研碎,按1mg/ml和去离子水配制悬浮液,超声处理1小时,得胶状氧化石墨烯悬浮液;
(2)缓慢加入还原剂NaOH、KOH 或水合肼,按照还原剂:氧化石墨烯=3:1,搅拌0.5小时,得石墨烯悬浮液;
(3)将上基底层浸入2分钟,缓慢提拉一次,晾干;
(4)放入加热炉加热至300℃,2分钟,得带石墨烯膜的基板;
(5)将带石墨烯膜的基板,浸入氯化金溶液25分钟,取出,用蒸馏水清洗,晾干,得一种石墨烯柔性薄膜太阳能电池的正极基板,其p型掺杂物的石墨烯膜厚为0.9纳米;
(6) 取氧化石墨研碎,按1mg/ml和去离子水配制悬浮液,超声处理1小时,得胶状氧化石墨烯悬浮液;
(7)缓慢加入还原剂NaOH、KOH 或水合肼,按照还原剂:氧化石墨烯=3:1,搅拌0.5小时,得石墨烯悬浮液;
(8)将上基底层浸入2分钟,缓慢提拉一次,晾干;
(9)放入加热炉加热至300℃,2分钟,得带石墨烯膜的基板;
(10)将带石墨烯膜的基板,浸入o-MeO-DMBI 溶液 25分钟,取出,用蒸馏水清洗,晾干,得一种石墨烯柔性薄膜太阳能电池的负极基板,其N型掺杂物的石墨烯膜厚为0.9纳米;
(11)将石墨烯正极基板,放入0.2mol/l的硅酸钠和0.1mol/l硫化钠混合溶液中浸泡一分钟,然后再置于0.1mol/l的硝酸镉溶液中反映10分钟;
(12)取出,用蒸馏水冲洗干净,晾干,得硫化镉光伏薄膜层,其厚度为0.9纳米;(13)将一种石墨烯柔性薄膜太阳能电池的正极基板和负极基板,上下相对,用聚乙烯醇缩丁醛热熔粘合固定,得一种石墨烯柔性薄膜太阳能电池。
实施例3
(1)取氧化石墨研碎,按1mg/ml和去离子水配制悬浮液,超声处理1小时,得胶状氧化石墨烯悬浮液;
(2)缓慢加入还原剂NaOH、KOH 或水合肼,按照还原剂:氧化石墨烯=4:1,搅拌0.5小时,得石墨烯悬浮液;
(3)将上基底层浸入2分钟,缓慢提拉一次,晾干;
(4)放入加热炉加热至300℃,2分钟,得带石墨烯膜的基板;
(5)将带石墨烯膜的基板,浸入氯化金溶液30分钟,取出,用蒸馏水清洗,晾干,得一种石墨烯柔性薄膜太阳能电池的正极基板,其p型掺杂物的石墨烯膜厚为1纳米;
(6)取氧化石墨研碎,按1mg/ml和去离子水配制悬浮液,超声处理1小时,得胶状氧化石墨烯悬浮液;
(7)缓慢加入还原剂NaOH、KOH 或水合肼,按照还原剂:氧化石墨烯=4:1,搅拌0.5小时,得石墨烯悬浮液;
(8)将上基底层浸入2分钟,缓慢提拉一次,晾干;
(9)放入加热炉加热至300℃,2分钟,得带石墨烯膜的基板;
(10)将带石墨烯膜的基板,浸入o-MeO-DMBI 溶液 30分钟,取出,用蒸馏水清洗,晾干,得一种石墨烯柔性薄膜太阳能电池的负极基板,其N型掺杂物的石墨烯膜厚为1纳米;
(11)将石墨烯正极基板,放入0.2mol/l的硅酸钠和0.1mol/l硫化钠混合溶液中浸泡一分钟,然后再置于0.1mol/l的硝酸镉溶液中反映10分钟;
(12)取出,用蒸馏水冲洗干净,晾干,得硫化镉光伏薄膜层,其厚度为1纳米;
(13)将一种石墨烯柔性薄膜太阳能电池的正极基板和负极基板,上下相对,用聚乙烯醇缩丁醛热熔粘合固定,得一种石墨烯柔性薄膜太阳能电池。
综上所述,无论是石墨烯掺杂p型半导体的膜层厚度;还是石墨烯掺杂N型半导体的膜层厚度;或者是光伏薄膜层的厚度;都与还原剂和氧化石墨烯的比例有关;和浸入了氯化金溶液和o-MeO-DMBI 溶液的时间有关,时间长则得到膜层的厚度就厚,反之就薄,总之从上述方法制作的一种石墨烯柔性薄膜太阳能电池,工艺简单,不会造成环境污染,成本低廉。
Claims (6)
1.一种石墨烯柔性薄膜太阳能电池,其特征在于主要包括:上基底层、石墨烯正电极层、光伏薄膜层、石墨烯负电极层和下基底层;石墨烯正电极层附着在上基底层上、石墨烯负电极层附着在下基底层上,中间为光伏薄膜层。
2.根据权利要求1所述一种石墨烯柔性薄膜太阳能电池,其特征在于上基底层和下基底层为PI透明薄膜,为厚度为250微米;耐温为269℃~400℃。
3.根据权利要求1所述一种石墨烯柔性薄膜太阳能电池,其特征在于石墨烯正电极层制作步骤如下:
(1)取氧化石墨研碎,按1mg/ml和去离子水配制悬浮液,超声处理1小时,得胶状氧化石墨烯悬浮液;
(2)缓慢加入还原剂NaOH、KOH或水合肼,按照还原剂:氧化石墨烯=2~4:1,搅拌0.5小时,得石墨烯悬浮液;
(3)将上基底层浸入2分钟,缓慢提拉一次,晾干;
(4)放入加热炉加热至300℃,2分钟,得带石墨烯膜的基板;
(5)将带石墨烯膜的基板,浸入氯化金溶液20~30分钟,取出,用蒸馏水清洗,晾干,得一种石墨烯柔性薄膜太阳能电池的正极基板,其p型掺杂物的石墨烯膜厚为1纳米。
4.根据权利要求1所述一种石墨烯柔性薄膜太阳能电池,其特征在于石墨烯负电极层制作步骤如下:
(1)取氧化石墨研碎,按1mg/ml和去离子水配制悬浮液,超声处理1小时,得胶状氧化石墨烯悬浮液;
(2)缓慢加入还原剂NaOH、KOH或水合肼,按照还原剂:氧化石墨烯=2~4:1,搅拌0.5小时,得石墨烯悬浮液;
(3)将下基底层浸入2分钟,缓慢提拉一次,晾干;
(4)放入加热炉加热至300℃,2分钟,得带石墨烯膜的基板;
(5)将带石墨烯膜的基板,浸入o-MeO-DMBI溶液20~30分钟,取出,用蒸馏水清洗,晾干,得一种石墨烯柔性薄膜太阳能电池的负极基板,其N型掺杂物的石墨烯膜厚为1纳米。
5.根据权利要求1所述一种石墨烯柔性薄膜太阳能电池,其特征在于光伏薄膜层制作步骤如下:
(1)将石墨烯正极基板,放入0.2mol/l的硅酸钠和0.1mol/l硫化钠混合溶液中浸泡一分钟,然后再置于0.1mol/l的硝酸镉溶液中反映5~10分钟;
(2)取出,用蒸馏水冲洗干净,晾干,得硫化镉光伏薄膜层,其厚度为1纳米。
6.根据权利要求1所述一种石墨烯柔性薄膜太阳能电池,其特征在于封装方法是将一种石墨烯柔性薄膜太阳能电池的正极基板和负极基板,上下相对,用聚乙烯醇缩丁醛热熔粘合固定。
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