CN106873912B - Dynamic partition storage method, device and system for TLC chip solid state disk - Google Patents
Dynamic partition storage method, device and system for TLC chip solid state disk Download PDFInfo
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- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
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- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
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- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
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Abstract
The invention provides a dynamic partition storage method of a TLC chip solid state disk, a device and a system thereof, when the space of the hard disk is larger than a preset value, data flow is stored in the hard disk according to a mode that one storage unit stores one bit of data, when the space of the hard disk is smaller than the preset value, the space of the hard disk is divided into three areas, and hot and cold data which are stored in the hard disk are respectively stored in the other two areas in a moving mode according to a mode that one storage unit stores two bits of data and one storage unit stores three bits of data. Therefore, when the space of the TLC chip solid state disk is large, the rapid reading and writing of the hard disk can be guaranteed, when the space of the hard disk is small, the data are moved to different areas according to the use frequency of the data, and the original area is still used for storing the rapid data.
Description
Technical Field
The invention relates to the field of storage systems, in particular to a dynamic partition storage method, device and system for a TLC chip solid state disk.
Background
With the continuous development of electronic technology, the requirements on the performance of storage media are higher and higher, and flash memory is a representative of a novel nonvolatile storage medium, has the advantages of high read-write speed, low power consumption, shock resistance and the like, and is widely applied to consumer electronic products such as embedded devices, mobile terminals and the like.
At present, solid state disks mainly comprise three types, namely an SLC (Single-Level Cell) chip solid state disk, an MLC (Multi-Level Cell) chip solid state disk and a TLC (triple-Level Cell) chip solid state disk, and compared with the three types of solid state disks, the TLC chip solid state disk has a storage mechanism of 3bit/1Cell, is large in storage capacity, low in price and low in speed, so that the application of the TCL chip solid state disk in high-performance electronic products is restricted, and if the reading and writing speed of the TCL chip solid state disk can be improved, the application cost can be greatly reduced.
Disclosure of Invention
The present invention is directed to solve at least one of the above problems, and provides a method, an apparatus, and a system for dynamic partition storage of a TLC chip solid state disk, so as to improve the read/write speed of the TLC chip solid state disk.
In order to achieve the purpose, the invention has the following technical scheme:
according to one aspect of the invention, a dynamic partition storage method for a TLC chip solid state disk comprises the following steps:
when the residual storage space of the TLC chip solid state disk is larger than a first preset value, storing the data stream into the TLC chip solid state disk in a first mode to form a fast operation data area;
when the remaining storage space of the TLC chip solid state disk is smaller than a first preset value, taking a hard disk area where a fast operation data area is located as a first area, moving and storing hot data in the first area into a second area of the remaining storage space in a second mode, and moving and storing cold data in the first area into a third area of the remaining space in a third mode, wherein the first mode is a mode of storing one bit of data in each storage unit, the second mode is a mode of storing two bits of data in each storage unit, and the third mode is a mode of storing three bits of data in each storage unit.
Optionally, the method further comprises:
when the residual storage space of the first area is larger than a second preset value, storing the data stream into the first area in a first mode;
when the residual storage space of the first area is smaller than a second preset value, judging whether the second area has enough space to accommodate the thermal data in the first area, if so, moving and storing the thermal data in the first area into the second area in a second mode, if not, adding at least part of the space of the first area into the second area, and moving and storing the thermal data in the first area into the second area in the second mode; and
and judging whether the third area has enough space to accommodate the cold data in the first area, if so, moving and storing the cold data in the first area into the third area in a third mode, and if not, adding at least part of the space of the first area into the third area, and moving and storing the cold data in the first area into the third area in the third mode.
Optionally, the method further comprises:
and re-dividing the first area, the second area and the third area of the TLC chip solid state disk according to the residual erasable times of the storage units in each area of the TLC chip solid state disk, and replacing the stored data.
Optionally, the method for determining cold data and hot data in the first area comprises: and determining cold data and hot data in the first area according to a cold and hot data linked list established in the cache.
Optionally, the method for determining cold data and hot data in the first area comprises: cold data and hot data in the first region are determined based on a frequency of access to data in the first region over a recent period of time.
According to another aspect of the present invention, a dynamic partition storage device of a TLC chip solid state disk comprises:
the rapid storage unit is used for storing the data stream into the TLC chip solid state disk in a first mode to form a rapid operation data area when the residual storage space of the TLC chip solid state disk is larger than a first preset value;
the second area dividing storage unit is used for taking a hard disk area where the fast operation data area is located as a first area and movably storing the thermal data in the first area to a second area of the remaining storage space in a second mode when the remaining storage space of the TLC chip solid state disk is smaller than a first preset value;
the third area dividing storage unit is used for movably storing cold data in the first area into a third area of the residual space in a third mode when the residual storage space of the TLC chip solid state disk is smaller than a first preset value;
the first mode is a mode in which each memory cell stores one bit of data, the second mode is a mode in which each memory cell stores two bits of data, and the third mode is a mode in which each memory cell stores three bits of data.
Optionally, the method further comprises:
the first area storage unit is used for storing the data stream into the first area in a first mode when the residual storage space of the first area is larger than a second preset value;
the second area re-storage unit is used for judging whether the second area has enough space to accommodate the thermal data in the first area or not when the residual storage space of the first area is smaller than a second preset value, if so, moving and storing the thermal data in the first area into the second area in a second mode, and if not, adding at least part of space of the first area into the second area, and moving and storing the thermal data in the first area into the second area in the second mode;
and the third area re-storage unit is used for judging whether the third area has enough space to accommodate the cold data in the first area or not when the residual storage space of the first area is smaller than a second preset value, if so, moving and storing the cold data in the first area into the third area in a third mode, and if not, adding at least part of the space of the first area into the third area and moving and storing the cold data in the first area into the third area in the third mode.
Optionally, the method further comprises:
and the area re-dividing unit is used for re-dividing the first area, the second area and the third area of the TLC chip solid state disk according to the residual erasable times of the storage units in each area of the TLC chip solid state disk and replacing the stored data.
Optionally, the cold data and the hot data in the first area are determined according to a cold and hot data linked list established in the cache.
Optionally, the cold data and the hot data in the first area are determined according to a frequency of access to the data in the first area within a last certain period of time.
According to another aspect of the invention, a dynamic partition storage system of a TLC chip solid state disk comprises any one of the storage devices and the TLC chip solid state disk.
Optionally, the storage device is disposed in the main control unit.
Optionally, the storage device further comprises a main control unit connected with the storage device.
Optionally, a cache unit is further included.
The embodiment of the invention provides a dynamic partition storage method, a device and a system of a TLC chip solid state disk, when the space of a hard disk is larger than a preset value, a data stream is stored in the hard disk according to a mode that one storage unit stores one bit of data, when the space of the hard disk is smaller than the preset value, the space of the hard disk is divided into three areas, and hot data and cold data which are stored in the hard disk are respectively stored in the other two areas in a moving mode according to a mode that one storage unit stores two bits of data and one storage unit stores three bits of data. Therefore, when the space of the TLC chip solid state disk is large, the rapid reading and writing of the hard disk can be guaranteed, when the space of the hard disk is small, the data are moved to different areas according to the use frequency of the data, and the original area is still used for storing the rapid data.
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In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 shows a flow chart of a dynamic partition storage method of a TLC chip solid state disk according to an embodiment of the present invention;
FIG. 2 shows a schematic structural diagram of a dynamic partition storage device of a TLC chip solid state disk according to an embodiment of the present invention;
fig. 3 is a system diagram of a dynamic partition storage device of a TLC chip solid state disk according to a first embodiment of the present invention;
fig. 4 shows a system diagram of a dynamic partition storage device of a TLC chip solid state disk according to the second embodiment of the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
The storage method provided by the embodiment of the invention is based on a TLC chip solid state disk, one storage unit of the traditional TLC chip solid state disk can store 3-bit data, namely 3bit/1cell, in the physical structure of the TLC chip solid state disk, one storage unit is a storage device, the storage device is usually a Metal-Oxide-semiconductor field-Effect Transistor (MOSFET), when storing data, namely writing operation, eight different voltages are applied to a control gate of the storage device to respectively represent eight states of the 3-bit data, therefore, the 3-bit data can be stored in one storage unit, when reading, corresponding reading voltage is applied to obtain corresponding data, the hard disk has large storage capacity and low price, but during the reading and writing operation, the sensitivity to the voltage is strong, multiple times of reading operation are often needed, the reading and writing speed is slow, restricting the application of the product in high-performance products. Therefore, the invention provides a dynamic partition storage method to improve the read-write speed of the TLC chip solid state disk.
Referring to fig. 1, a dynamic partition storage method for a TLC chip solid state disk includes:
s101, when the residual storage space of the TLC chip solid state disk is larger than a first preset value, storing a data stream into the TLC chip solid state disk in a first mode to form a fast operation data area;
and S102, when the remaining storage space of the TLC chip solid state disk is smaller than a first preset value, taking a hard disk area where a fast operation data area is located as a first area, moving and storing hot data in the first area into a second area of the remaining storage space in a second mode, and moving and storing cold data in the first area into a third area of the remaining space in a third mode, wherein the first mode is a mode of storing one bit of data in each storage unit, the second mode is a mode of storing two bits of data in each storage unit, and the third mode is a mode of storing three bits of data in each storage unit.
In an embodiment of the present invention, the TLC chip solid state disk may be composed of one or more TLC flash memory particles, for example, 128G TLC chip solid state disk, one 128G TLC flash memory particle, or 4 32G TLC flash memory particles, and the hard disk composed of a plurality of TLC flash memory particles is logically an integrated hard disk storage space.
In order to better understand the technical solution of the embodiment of the present invention, a first storage manner, a second storage manner, and a third storage manner are described first, and these three different storage manners are made for the TLC chip solid state disk. For the TLC chip solid state hard disk is composed of a plurality of storage units, each storage unit is a storage device, the TLC storage device in the hard disk stores three-bit data in one storage unit, for the convenience of description, the invention is written as a third mode, data are stored in the storage units in a writing operation, eight writing voltages are applied to control gates in the writing operation, and the eight states of 3-bit data correspond to the eight states, so that one storage unit stores three-bit data, which is the traditional storage mode of the TLC hard disk.
For the memory device in the hard disk like TLC, in the embodiment of the present invention, a first mode and a second mode are also proposed, where the first mode is a mode in which each memory cell stores one bit of data, and the second mode is a mode in which each memory cell stores two bits of data. For the first mode, two write voltages are applied to the control gate during write operation, corresponding to two states of 1-bit data, so that one memory cell stores one-bit data, and correspondingly, two corresponding read voltages are applied during read operation, so that 1-bit data is read. For the second mode, four write voltages are applied to the control gate during write operation, corresponding to four states of 2-bit data, so that one memory cell stores two-bit data, and correspondingly, four corresponding read voltages are applied during read operation, so that 2-bit data is read.
The technical solution of the present invention will be described below with reference to specific examples. In the embodiment of the invention, firstly, when the remaining storage space of the TLC chip solid state disk is larger than a first preset value, the data stream is stored in the hard disk in a manner that each storage unit stores one bit of data.
At this time, it is considered that the storage space of the hard disk is relatively abundant, and the data stream requested to be stored can be placed in the hard disk in the first storage mode with the fastest storage efficiency, and the data stored in the first mode is recorded as the fast operation data area. The first preset value may be set according to specific needs, for example, may be half or half of the total storage space, and at this time, the read-write speed of the solid state disk may be maximized.
And then, when the remaining storage space of the TLC chip solid state disk is smaller than a first preset value, taking a hard disk area where the fast operation data area is located as a first area, storing hot data in the first area into a second area of the remaining storage space in a second mode, and storing cold data in the first area into a third area of the remaining storage space in a third mode, wherein the first area, the second area and the third area are respectively used for storing data streams in the first mode, the second mode and the third mode.
At this time, as the data stored in the first mode is more and more, the consumption of the storage space is increased, the remaining storage space is smaller and more, and according to the condition of cold and hot data in the fast operation data area, the data are stored in different areas in another two modes of occupying smaller storage space, and the area where the original fast operation data area is still used for storing the subsequent data stream in the first mode, so that under the condition of ensuring that the hard disk has enough space to read and write normally, the reading and writing speed is taken into consideration, and the reading and writing performance is improved as much as possible.
When the remaining storage space of the hard disk is smaller than a first preset value, the hard disk is divided into three areas, the first area is a hard disk area where an original fast operation data area is located, the first area can be larger than or equal to the area of the fast operation data area, the second area and the third area are divided from the remaining storage space, the first area, the second area and the third area are logic areas of the TLC chip solid state hard disk, and each area can be an area or a plurality of areas with continuous addresses.
Specifically, hot data in the first area is stored in the second area in a second manner, and cold data in the first area is stored in the third area in a third manner, where the hot data and the cold data are relative, and the hot data is data having a higher access frequency relative to the cold data.
The cold data and the hot data in the first region may be determined in different manners, and in some embodiments, the cold data and the hot data in the first region may be determined according to a cold and hot data linked list established in the cache. In some applications, before data enters the hard disk, a cold and hot data linked list is established in a cache, different algorithms and methods are used to establish different cold and hot data linked lists, for example, only one cold data linked list and one hot data linked list exist in the cold and hot data linked list, or multiple cold data linked lists or multiple hot data linked lists exist, when cold data and hot data in a first area are specifically determined, according to the cold and hot linked lists, according to specific needs, data in the hot linked list can be used as hot data in the first area, data in the cold linked list can be used as cold data in the first area, when the linked lists are multiple, data in a part of the hot linked list can be used as hot data in the first area, data in another part of the hot linked list and the cold linked list can be used as cold data in the first area, it can be understood that the cold and hot linked list in the cache does not contain all data in the first area, data in the first region that is not present in the cache cold linked list is data that has been accessed very little in the recent period of time and is also considered cold data.
In other embodiments, the cold and hot data may be determined directly, and the cold and hot data in the first region may be determined based on the access frequency to the data in the first region over the last period of time. The access frequency of a period of time can be obtained by counting the number of times of access to the data in the first area, and some data are determined to be cold data and other data are determined to be hot data according to the sequence of the access frequency or the size of the access frequency.
Then, the determined hot data will be stored in the second area in a second manner, and the determined cold data will be stored in the third area in a third manner, i.e. after the data is stored in the second area, the data in the first area will be erased. Therefore, the first area is released and still used for storing the data stream which is subsequently requested to be stored in a first mode, the data with less access times are stored in a denser mode, the data with more access times are stored in a mode with intermediate storage speed and storage density, storage and speed are considered, and the speed and cost performance of the TLC chip solid state disk are improved.
Due to the difference between the data amount and the storage space, in some embodiments, the above partitioning may achieve storage of data with higher performance, and in other embodiments, further partitioning storage is required, specifically, the following step of continuing partitioning is further included:
when the residual storage space of the first area is larger than a second preset value, storing the data stream into the first area in a first mode;
when the residual storage space of the first area is smaller than a second preset value, judging whether the second area has enough space to accommodate the thermal data in the first area, if so, moving and storing the thermal data in the first area into the second area in a second mode, if not, adding at least part of the space of the first area into the second area, and moving and storing the thermal data in the first area into the second area in the second mode; and
and judging whether the third area has enough space to accommodate the cold data in the first area, if so, moving and storing the cold data in the first area into the third area in a third mode, and if not, adding at least part of the space of the first area into the third area, and moving and storing the cold data in the first area into the third area in the third mode.
In the partition continuing step, data streams are continuously stored in the first area in a first mode, after the first area stores a certain amount of data, whether the second area and the third area have enough space for mobile storage is judged, if yes, hot data in the first area is stored in the second area in a second mode in a mobile mode, and cold data in the first area is stored in the third area in a third mode in a mobile mode; if not, the storage space is subdivided, part of the space of the first area is divided into a second area and/or a third area, and the hot data and the cold data in the first area are stored in the second area and the third area in a movable mode, so that the performance of the hard disk is maximized under the condition that normal reading and writing of the hard disk are fully guaranteed. In the step of continuing partitioning, the method for determining the cold data and the hot data is the same as that described in the above embodiment, and is not described herein again. According to specific requirements, the step of continuously partitioning can be repeated for many times, and when the data storage capacity is continuously increased, the proportion occupied by the first area is continuously reduced, so that normal reading and writing of the hard disk are fully ensured.
For the above embodiment, the repartitioning may be further performed, and the repartitioning step includes: and re-dividing the first area, the second area and the third area of the TLC chip solid state disk according to the residual erasable times of the storage units in each area of the TLC chip solid state disk, and replacing the stored data.
The step of repartitioning may be performed at any time, preferably when the hard disk is not in operation, and more preferably before the data in the first area is moved to the second area and the third area for storage. When the regions are re-partitioned, the remaining erasable times of the storage units in each region of the TLC chip solid state disk are mainly considered, for example, in a specific embodiment, the remaining erasable times of a partial space in the first region are less than a certain preset value, the remaining erasable times of a partial space in the second region are less than another preset value, and a space with the remaining erasable times greater than a preset value exists in other spaces of the TLC chip solid state disk, the first region and the second region are partitioned into a space with a large number of remaining erasable times, and whether the third region needs to be re-partitioned is determined according to the condition of partitioning the space. When the hard disk is divided again, the stored data is replaced, and the data in the original areas are stored in the newly divided areas in a movable mode according to the original storage mode, so that the normal reading and writing of the hard disk data can be further ensured.
In addition, the present invention provides a dynamic partition storage apparatus for a TLC chip solid state disk corresponding to the above method, for implementing the above method, and referring to fig. 2, the apparatus 200 includes:
the fast storage unit 210 is configured to store the data stream into the TLC chip solid state disk in a first manner to form a fast operation data area when the remaining storage space of the TLC chip solid state disk is greater than a first preset value;
the second area dividing storage unit 220 is configured to, when the remaining storage space of the TLC chip solid state disk is smaller than a first preset value, use the hard disk area where the fast operation data area is located as a first area, and move and store the thermal data in the first area to a second area of the remaining storage space in a second manner;
the third region dividing storage unit 230 is configured to, when the remaining storage space of the TLC chip solid state disk is smaller than a first preset value, movably store cold data in the first region in a third manner to a third region of the remaining space;
the first mode is a mode in which each memory cell stores one bit of data, the second mode is a mode in which each memory cell stores two bits of data, and the third mode is a mode in which each memory cell stores three bits of data.
Further, still include:
the first area storage unit is used for storing the data stream into the first area in a first mode when the residual storage space of the first area is larger than a second preset value;
the second area re-storage unit is used for judging whether the second area has enough space to accommodate the thermal data in the first area or not when the residual storage space of the first area is smaller than a second preset value, if so, moving and storing the thermal data in the first area into the second area in a second mode, and if not, adding at least part of space of the first area into the second area, and moving and storing the thermal data in the first area into the second area in the second mode;
and the third area re-storage unit is used for judging whether the third area has enough space to accommodate the cold data in the first area or not when the residual storage space of the first area is smaller than a second preset value, if so, moving and storing the cold data in the first area into the third area in a third mode, and if not, adding at least part of the space of the first area into the third area and moving and storing the cold data in the first area into the third area in the third mode.
Further, still include:
and the area re-dividing unit is used for re-dividing the first area, the second area and the third area of the TLC chip solid state disk according to the residual erasable times of the storage units in each area of the TLC chip solid state disk and replacing the stored data.
Further, cold data and hot data in the first area are determined according to a cold and hot data linked list established in the cache.
Further, cold data and hot data in the first area are determined based on a frequency of access to data in the first area over a recent period of time.
Referring to fig. 3 and 4, the present invention further provides a dynamic partition storage system including a TLC chip solid state disk of any of the above-mentioned storage devices 200, and the system further includes a TLC chip solid state disk 300.
As shown in fig. 3, in some embodiments, the storage device 200 is disposed in the main control Unit 310, the main control Unit 310 may be a main control chip mainly responsible for storage management of the solid state disk and undertake data transfer, the main control chip may be, for example, an MCU (micro controller Unit) chip, the main control Unit dynamically stores data streams from I/O into the TLC chip solid state disk 300, the TLC chip solid state disk 300 may include one or more TLC cache particles, in this embodiment, the storage system may further include a buffer Unit 320, the buffer Unit 320 is configured to buffer random reading and writing of common files and fast reading and writing of fragmented files, and the storage device 200 dynamically stores the data streams from the buffer Unit into the TLC chip solid state disk 300.
As shown in fig. 4, in other embodiments, the storage system includes a main control Unit 410 and the storage device 200 connected to the main control Unit, where the main control Unit 410 may be a main control chip mainly responsible for storage management of the solid state disk and responsible for data transfer, the main control chip may be, for example, an MCU (micro controller Unit) chip, the storage device 200 may be another control chip, for example, another MCU chip, and the main control Unit 410 dynamically stores a data stream from the I/O into the TLC chip solid state disk 400 through the storage device 200, and in this embodiment, the storage system may further include a buffer Unit 420, and the storage device dynamically stores the data stream from the buffer Unit 420 into the TLC chip solid state disk 400 according to an instruction of the main control Unit 410.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for system embodiments, since they are substantially similar to method embodiments, they are described in a relatively simple manner, and reference may be made to some descriptions of method embodiments for relevant points. The above-described system embodiments are merely illustrative, wherein the modules or units described as separate parts may or may not be physically separate, and the parts displayed as modules or units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of the present embodiment. One of ordinary skill in the art can understand and implement it without inventive effort.
The foregoing is only a preferred embodiment of the present invention, and although the present invention has been disclosed in the preferred embodiments, it is not intended to limit the present invention. Those skilled in the art can make numerous possible variations and modifications to the present teachings, or modify equivalent embodiments to equivalent variations, without departing from the scope of the present teachings, using the methods and techniques disclosed above. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention, unless the contents of the technical solution of the present invention are departed.
Claims (12)
1. A dynamic partition storage method of a TLC chip solid state disk is characterized by comprising the following steps:
when the residual storage space of the TLC chip solid state disk is larger than a first preset value, storing the data stream into the TLC chip solid state disk in a first mode to form a fast operation data area;
when the residual storage space of the TLC chip solid state disk is smaller than a first preset value, taking a hard disk area where a fast operation data area is located as a first area, movably storing hot data in the first area into a second area of the residual storage space in a second mode, and movably storing cold data in the first area into a third area of the residual storage space in a third mode;
when the residual storage space of the first area is larger than a second preset value, storing the data stream into the first area in a first mode;
when the residual storage space of the first area is smaller than a second preset value, judging whether the second area has enough space to accommodate the thermal data in the first area, if so, moving and storing the thermal data in the first area into the second area in a second mode, if not, adding at least part of the space of the first area into the second area, and moving and storing the thermal data in the first area into the second area in the second mode; and
judging whether the third area has enough space to accommodate the cold data in the first area, if so, moving and storing the cold data in the first area into the third area in a third mode, and if not, adding at least part of the space of the first area into the third area, and moving and storing the cold data in the first area into the third area in the third mode;
the first mode is a mode in which each memory cell stores one bit of data, the second mode is a mode in which each memory cell stores two bits of data, and the third mode is a mode in which each memory cell stores three bits of data.
2. The dynamic partition storage method of claim 1, further comprising:
and re-dividing the first area, the second area and the third area of the TLC chip solid state disk according to the residual erasable times of the storage units in each area of the TLC chip solid state disk, and replacing the stored data.
3. The dynamic partition storage method of claim 1, wherein the method for determining cold data and hot data in the first region comprises: and determining cold data and hot data in the first area according to a cold and hot data linked list established in the cache.
4. The dynamic partition storage method of claim 1, wherein the method for determining cold data and hot data in the first region comprises: cold data and hot data in the first region are determined based on a frequency of access to data in the first region over a recent period of time.
5. A dynamic partition storage device of a TLC chip solid state disk is characterized by comprising:
the rapid storage unit is used for storing the data stream into the TLC chip solid state disk in a first mode to form a rapid operation data area when the residual storage space of the TLC chip solid state disk is larger than a first preset value;
the second area dividing storage unit is used for taking a hard disk area where the fast operation data area is located as a first area and movably storing the thermal data in the first area to a second area of the remaining storage space in a second mode when the remaining storage space of the TLC chip solid state disk is smaller than a first preset value;
the third area dividing storage unit is used for movably storing cold data in the first area into a third area of the residual space in a third mode when the residual storage space of the TLC chip solid state disk is smaller than a first preset value;
the first area storage unit is used for storing the data stream into the first area in a first mode when the residual storage space of the first area is larger than a second preset value;
the second area re-storage unit is used for judging whether the second area has enough space to accommodate the thermal data in the first area or not when the residual storage space of the first area is smaller than a second preset value, if so, moving and storing the thermal data in the first area into the second area in a second mode, and if not, adding at least part of space of the first area into the second area, and moving and storing the thermal data in the first area into the second area in the second mode;
the third area re-storage unit is used for judging whether the third area has enough space to accommodate the cold data in the first area or not when the residual storage space of the first area is smaller than a second preset value, if so, moving and storing the cold data in the first area into the third area in a third mode, and if not, adding at least part of space of the first area into the third area and moving and storing the cold data in the first area into the third area in the third mode;
the first mode is a mode in which each memory cell stores one bit of data, the second mode is a mode in which each memory cell stores two bits of data, and the third mode is a mode in which each memory cell stores three bits of data.
6. The storage device of claim 5, further comprising:
and the area re-dividing unit is used for re-dividing the first area, the second area and the third area of the TLC chip solid state disk according to the residual erasable times of the storage units in each area of the TLC chip solid state disk and replacing the stored data.
7. The storage device of claim 5, wherein the cold data and the hot data in the first region are determined according to a linked list of cold and hot data established in the cache.
8. The storage device of claim 5, wherein the cold data and the hot data in the first region are determined based on a frequency of access to the data in the first region over a recent period of time.
9. A dynamic partition storage system of a TLC chip solid state disk, comprising the storage device according to any one of claims 5-8, and a TLC chip solid state disk.
10. The storage system of claim 9, wherein the storage device is disposed in a master control unit.
11. The storage system of claim 9, further comprising a master unit coupled to the storage device.
12. The storage system according to any one of claims 9 to 11, further comprising a cache unit.
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Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107450858A (en) * | 2017-08-11 | 2017-12-08 | 湖南国科微电子股份有限公司 | A kind of solid state hard disc classification storage method and system |
| CN107608625B (en) * | 2017-08-11 | 2020-09-11 | 记忆科技(深圳)有限公司 | Method for improving reading performance of fixed storage equipment |
| TWI649759B (en) * | 2017-09-28 | 2019-02-01 | 慧榮科技股份有限公司 | Data storage device and method for writing data into memory device |
| CN108549588A (en) * | 2018-03-27 | 2018-09-18 | 深圳忆联信息系统有限公司 | A method of eliminating TLC flash memory multi-disc program fails |
| CN110364216B (en) * | 2018-04-09 | 2022-03-01 | 合肥沛睿微电子股份有限公司 | Solid state disk and operation method thereof |
| CN109521961B (en) * | 2018-11-13 | 2021-10-26 | 深圳忆联信息系统有限公司 | Method and system for improving read-write performance of solid state disk |
| WO2020186455A1 (en) * | 2019-03-19 | 2020-09-24 | 华为技术有限公司 | Data storage method and storage chip |
| CN110399451B (en) * | 2019-06-29 | 2021-11-26 | 苏州浪潮智能科技有限公司 | Full-text search engine caching method, system and device based on nonvolatile memory and readable storage medium |
| WO2021035555A1 (en) * | 2019-08-27 | 2021-03-04 | 华为技术有限公司 | Data storage method and apparatus for solid state disk and solid state disk (ssd) |
| US11314427B2 (en) | 2020-08-21 | 2022-04-26 | Micron Technology, Inc. | Memory device with enhanced data reliability capabilities |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101369451A (en) * | 2007-08-14 | 2009-02-18 | 三星电子株式会社 | Solid state memory (ssm), computer system including an ssm, and method of operating an ssm |
| CN102956255A (en) * | 2011-08-30 | 2013-03-06 | 慧荣科技股份有限公司 | Flash memory controller |
| CN103093822A (en) * | 2011-10-27 | 2013-05-08 | 慧荣科技股份有限公司 | Flash memory device of three-order storage unit and control method thereof |
| CN103530236A (en) * | 2013-10-21 | 2014-01-22 | 华为技术有限公司 | Method and device for obtaining hybrid hard disk |
| CN103914410A (en) * | 2013-01-08 | 2014-07-09 | 联想(北京)有限公司 | Storage device, electronic device and data access method |
| CN106155579A (en) * | 2015-04-27 | 2016-11-23 | 广明光电股份有限公司 | The method of solid state hard disc dynamic storing conversion layer data |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8402217B2 (en) * | 2009-09-15 | 2013-03-19 | Marvell International Ltd. | Implementing RAID in solid state memory |
| US9025393B2 (en) * | 2013-03-25 | 2015-05-05 | Seagate Technology Llc | Method of optimizing solid state drive soft retry voltages |
-
2017
- 2017-02-16 CN CN201710083745.2A patent/CN106873912B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101369451A (en) * | 2007-08-14 | 2009-02-18 | 三星电子株式会社 | Solid state memory (ssm), computer system including an ssm, and method of operating an ssm |
| CN102956255A (en) * | 2011-08-30 | 2013-03-06 | 慧荣科技股份有限公司 | Flash memory controller |
| CN103093822A (en) * | 2011-10-27 | 2013-05-08 | 慧荣科技股份有限公司 | Flash memory device of three-order storage unit and control method thereof |
| CN103914410A (en) * | 2013-01-08 | 2014-07-09 | 联想(北京)有限公司 | Storage device, electronic device and data access method |
| CN103530236A (en) * | 2013-10-21 | 2014-01-22 | 华为技术有限公司 | Method and device for obtaining hybrid hard disk |
| CN106155579A (en) * | 2015-04-27 | 2016-11-23 | 广明光电股份有限公司 | The method of solid state hard disc dynamic storing conversion layer data |
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