CN106872532A - A kind of labeling type semiconductor gas sensor - Google Patents
A kind of labeling type semiconductor gas sensor Download PDFInfo
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- CN106872532A CN106872532A CN201710238258.9A CN201710238258A CN106872532A CN 106872532 A CN106872532 A CN 106872532A CN 201710238258 A CN201710238258 A CN 201710238258A CN 106872532 A CN106872532 A CN 106872532A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000002372 labelling Methods 0.000 title claims abstract description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 132
- 229910052737 gold Inorganic materials 0.000 claims description 113
- 239000010931 gold Substances 0.000 claims description 113
- 206010070834 Sensitisation Diseases 0.000 claims description 22
- 230000008313 sensitization Effects 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 20
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 17
- 229910000679 solder Inorganic materials 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000003292 glue Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 238000004026 adhesive bonding Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 229920000297 Rayon Polymers 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 230000008901 benefit Effects 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000007650 screen-printing Methods 0.000 abstract description 4
- 230000036461 convulsion Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 6
- 238000007639 printing Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 241000218202 Coptis Species 0.000 description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 206010068052 Mosaicism Diseases 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000036757 core body temperature Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001548 drop coating Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 210000003765 sex chromosome Anatomy 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The invention discloses a kind of labeling type semiconductor gas sensor, it is related to sensor technical field.A kind of semiconductor gas sensor of SMD structure can be obtained using the solution of the present invention, because its chip uses SMD assembling mode, size can be to greatest extent reduced in one direction, and can be better against jerk.In addition, the silk-screen printing that is related to of its production, semiconductor package are surveyed etc., technology is more ripe, and cost advantage is obvious.The advantage of existing chip and MEMS semiconductor gas sensors is merged with this product for producing, the demand in market can have well been met in performance and cost.
Description
Technical field
The present invention relates to sensor technical field, more particularly to a kind of labeling type semiconductor gas sensor.
Background technology
The semiconductor gas sensor of current main flow is a kind of impedance device, and its commercial applications starts from 19th century six or seven ten
In the age, by the development of many decades, semiconductor gas sensor has turned into current volume of production and marketing maximum, the most wide gas of range of application
Sensor, occupies critical role in gas sensor domain.
Nowadays the semiconductor gas sensor that the marketization is promoted, can be divided mainly into microballon formula, tubular type, piece from structural form
Tetra- kinds of formula and MEMS.Wherein microballon formula, tubular type and chip-Size semiconductor gas sensor development is relatively early, production application technology maturation,
It is current major product form, wherein with sheet type sensor accounting highest.Although these three sensors come in every shape, but are
Discrete device, sensitive core body is to weld to realize by lead using suspention assembly mode, i.e. sensitive core body and the connection of pedestal,
Easily because jerk makes sensor sustain damage, applied in the fields such as automobile, portable product has potential wind to this kind of assembling mode
Danger.MEMS semiconductor gas sensors are that recent two decades carry out progressively commercialized product, using paster encapsulating structure, by outstanding film or
Cantilevered micro-hotplate and gas sensing layer composition sensitive core body, are pasted in ceramic cartridge, with gold thread binding connection sensitive core body and shell
Body pad.Sensors with auxiliary electrode small volume, low in energy consumption, shock resistance are good, easy of integration, but such product is produced based on MEMS technology, is needed
Manufacturing on a large scale can show cost and quality-advantage, be limited to the market factor, at present not yet occuping market main flow, mainly
Apply in some Intelligent worn devices.
, it is necessary to one kind has chip concurrently and MEMS sensor advantage, i.e. structural stability are good, raw under current market background
The product that easy making process, cost advantage are protruded is produced, to meet the application demand of reality.
The content of the invention
In view of the shortcomings of the prior art, it is a primary object of the present invention to provide a kind of structural stability it is good, production
The more prominent labeling type semiconductor gas sensor of easy making process, cost advantage.
To achieve the above object, the invention provides following technical scheme：A kind of labeling type semiconductor gas sensor, bag
Gas sensitization chip, the pcb board containing blind hole and metal nut cap are included, the gas sensitization chip includes high-purity alumina ceramic base
Piece, the high-purity alumina ceramic substrate is connected with measuring electrode gold conductive strips and adding thermal resistance gold conductive strips, the measurement
The upper surface of electrode gold conductive strips is provided with gas sensitive layer, and the lower surface of the adding thermal resistance gold conductive strips is connected with heating electricity
Resistance layer, the adding thermal resistance gold conductive strips include the first adding thermal resistance gold conductive layer and the second adding thermal resistance gold conductive layer, described
The first pad and the second pad are provided through on high-purity alumina ceramic substrate, are all provided with first pad and the second pad
Gold wire is equipped with, the first adding thermal resistance gold conductive layer includes being turned on the first of connection by the gold wire in the first pad
Adding thermal resistance gold conductive layer and first time adding thermal resistance gold conductive layer, the second adding thermal resistance gold conductive layer include passing through second
Gold wire in pad turns on adding thermal resistance gold conductive layer and second time adding thermal resistance gold conductive layer on the second of connection, and heating is electric
Resistance layer connects first time adding thermal resistance gold conductive layer and second time adding thermal resistance gold conductive layer, the measuring electrode Jin Dao electricity Dai Bao
Include the first measuring electrode gold conductive layer and the second measuring electrode gold conductive layer, gas sensitive layer connection the first measuring electrode gold
Conductive layer and the second measuring electrode gold conductive layer, the gas sensitization chip lid be located in blind hole and with pcb board bonding connection, institute
State and be provided through on pcb board several gold solder disks, the first measuring electrode gold conductive layer, the second measuring electrode gold are conductive
Layer, the first adding thermal resistance gold conductive layer and the second adding thermal resistance gold conductive layer are bound by gold wire with a gold solder disk connect respectively
Connect, the form and dimension of the metal nut cap is identical with the form and dimension of pcb board, the metal nut cap is covered by viscose glue
Gold solder disk on pcb board.
Preferably, the form and dimension of the blind hole is identical with the form and dimension of high-purity alumina ceramic substrate.
Preferably, flange is provided with the metal nut cap, the flange is connected with gold wire by gluing being fixed on
On the gold solder disk of pcb board.
Preferably, several thermal vias are provided with the top of the metal nut cap.
Preferably, connected by high-temperature insulation glue sticking between the gas sensitization chip and pcb board.
The present invention has the following advantages that the semi-conductor gas that can obtain a kind of SMD structure are sensed relative to prior art
Device, because its chip uses SMD assembling mode, can to greatest extent reduce size in one direction, and can be preferably
Resistance jerk.In addition, the silk-screen printing that is related to of its production, semiconductor package are surveyed etc., technology is more ripe, and cost is excellent
Gesture is obvious.The advantage of existing chip and MEMS semiconductor gas sensors has been merged with this product for producing, can performance and into
The demand in market is met in sheet well.
Brief description of the drawings
Fig. 1 is the Rotating fields schematic diagram of gas sensitization chip of the invention；
Fig. 2 is the structural representation of pcb board of the invention；
Fig. 3 is the structural representation of metal nut cap of the invention；
Fig. 4 is the structural representation of high-purity alumina ceramic substrate of the invention；
Fig. 5 is the structural representation that adding thermal resistance gold conductive strips are set on the basis of Fig. 4；
Fig. 6 is the structural representation that heating resistor layer is set on the basis of Fig. 5；
Fig. 7 is the structural representation that measuring electrode gold conductive strips are set on the basis of Fig. 4；
Fig. 8 is the structural representation that gas sensitive layer is set on the basis of Fig. 7；
Fig. 9 is the structural representation after gas sensitization chip of the invention is installed on pcb board；
Structural representation after Figure 10 is gas sensitization chip of the invention and metal nut cap is installed on PCB.
In figure：1st, gas sensitization chip；11st, high-purity alumina ceramic substrate；12nd, adding thermal resistance gold conductive strips；121st,
One adding thermal resistance gold conductive layer；1211st, adding thermal resistance gold conductive layer on first；1212nd, first time adding thermal resistance gold conductive layer；
122nd, the second adding thermal resistance gold conductive layer；1221st, adding thermal resistance gold conductive layer on second；1222nd, second time adding thermal resistance gold is led
Electric layer；13rd, measuring electrode gold conductive strips；131st, the first measuring electrode gold conductive layer；132nd, the second measuring electrode gold conductive layer；
14th, gas sensitive layer；15th, heating resistor layer；16th, the first pad；17th, the second pad；2nd, pcb board；21st, blind hole；22nd, gold solder
Disk；3rd, metal nut cap；31st, flange；32nd, thermal vias；4th, gold wire.
Specific embodiment
The invention will be further described below in conjunction with the accompanying drawings.
As shown in figure 1, a kind of labeling type semiconductor gas sensor, including gas sensitization chip 1, the PCB containing blind hole 21
Plate 2 and metal nut cap 3, the gas sensitization chip 1 include high-purity alumina ceramic substrate 11, the high-purity alumina ceramic
Substrate 11 is connected with measuring electrode gold conductive strips 13 and adding thermal resistance gold conductive strips 12, the measuring electrode gold conductive strips 13
Upper surface is provided with gas sensitive layer 14, and the lower surface of the adding thermal resistance gold conductive strips 12 is connected with heating resistor layer 15, institute
Stating adding thermal resistance gold conductive strips 12 includes the first adding thermal resistance gold conductive layer 121 and second adding thermal resistance gold conductive layer 122, described
The first pad 16 and the second pad 17 are provided through on high-purity alumina ceramic substrate 11, first pad 16 and second is welded
Gold wire 4 is provided with disk 17, the first adding thermal resistance gold conductive layer 121 is included by the gold wire in the first pad 16
Adding thermal resistance gold conductive layer 1211 and first time adding thermal resistance gold conductive layer 1212 on the first of 4 conducting connections, described second adds
It is conductive that the gold wire 4 that thermal resistance gold conductive layer 122 includes passing through in the second pad 17 turns on adding thermal resistance gold on the second of connection
Layer 1221 and second time adding thermal resistance gold conductive layer 1222, heating resistor layer 15 connect first time adding thermal resistance gold conductive layer 1212
With second time adding thermal resistance gold conductive layer 1222, the measuring electrode gold conductive strips 13 include the first measuring electrode gold conductive layer
131 and the second measuring electrode gold conductive layer 132, gas sensitive layer 14 connects the first measuring electrode gold conductive layer 131 and the
Two measuring electrodes gold conductive layer 132, the gas sensitization chip 1 lid be located in blind hole 21 and with the bonding connection of pcb board 2, it is described
Several gold solder disks 22 are provided through on pcb board 2, the first measuring electrode gold conductive layer 131, the second measuring electrode gold are led
Electric layer 132, the first adding thermal resistance gold conductive layer 121 and second adding thermal resistance gold conductive layer 122 lead to a gold solder disk 22 respectively
The binding connection of gold wire 4 is crossed, the form and dimension of the metal nut cap 3 is identical with the form and dimension of pcb board 2, the metal
Block 3 covers the gold solder disk 22 on pcb board 3 by viscose glue.
The operation principle of wherein gas sensor is known to the skilled person general knowledge, and the present embodiment is not gone to live in the household of one's in-laws on getting married herein
State, be carried out example and the structure and technique of labeling type semiconductor gas sensor are further explained.
In the present invention, nanosize metal oxide gas sensitive is prepared by chemical synthesis（SnO2、WO3、TiO2、
In2O3, ZnO etc.）, obtain gas sensitive material of main part；Noble metal catalyst is added again improves activity, such as platinum, palladium；Addition three
Al 2 O, silica etc. improve the intensity of gas sensing layer；Add other auxiliary materials and form gas sensitive system.From high-purity
Alumina ceramic substrate 11（Purity >=96% aluminum oxide）, sheet electrodes are made using thick film printing technique, its composition includes containing
2 through holes are the ceramic bases of the first pad 16 and the second pad 17.The nano metal oxide materials and other materials that will be prepared
Material solid phase mixing, with the finely ground mixing of ball mill, is adjusted to the pulpous state of modest viscosity.Specific shape is pressed in the way of silk-screen printing or coating
Shape and thickness are overlying on the working region of sheet electrodes.And by heat treatment for solidification, gas sensitization layer is formed, it is made chip-Size semiconductor
Gas sensor sensitive chip.
Specifically, referring to the drawings 4, it is the high-purity alumina ceramic base as the substrate of gas sensitization chip 1 in the present invention
Piece 11, is provided with two symmetrical through holes.
As shown in figure 5, being conductive with the adding thermal resistance gold that gold paste prints at the back side of high-purity alumina ceramic substrate 11 of Fig. 4
With 13 figure, the first pad 16 and the second pad 17 are embedded in the first adding thermal resistance gold conductive layer 131 and second adding thermal resistance gold
In conductive layer 132, adding thermal resistance gold conductive layer 1211 and first time adding thermal resistance gold on first are ensured using via mode of printing
The conducting connection of conductive layer 1212, and adding thermal resistance gold conductive layer 1221 and second time adding thermal resistance gold conductive layer on second
1222 conducting connection.
It is the ruthenium based compound adding thermal resistance printed on adding thermal resistance gold conductive strips 13 on the basis of Fig. 5 referring to the drawings 6
Layer 15.
As shown in fig. 7, being the measuring electrode gold conductive strips printed with gold paste in the high pure oxide ceramic substrate front of Fig. 4
12, two, top through hole is respectively the first pad 16 and the second pad 17.
As shown in figure 8, being the gas sensitive layer on the basis of Fig. 7 in the working region printing of measuring electrode gold conductive strips 12
14, after gas sensitive layer 14 is completed for printing, by sintering processes, that is, obtain the gas sensitization core of chip-Size semiconductor gas sensor
Piece 1.
Point gum machine drop coating high-temperature insulation glue is used in advance in the blind hole 21 of the PCB substrate of Fig. 2, by gas sensitization chip
1 back side, i.e., the one side with heating resistor layer 15 is placed in directly over blind hole 21, laminating drying, then the bottom surface of gas sensitization chip 1
With PCB substrate flush, both are bonded firmly.As shown in Figure 9.
After gas sensitization chip 1 is fixed in PCB substrate, by its corresponding first survey in the way of gold wire 4 is bound
Amount electrode gold conductive layer 131, the second measuring electrode gold conductive layer 132, the first adding thermal resistance gold conductive layer 121 and second are heated
Resistance gold conductive layer 122 is bound by gold wire 4 with a gold solder disk 22 be connected respectively, and compact conformation, stable connection realizes circuit
Connection.
The metal nut cap 3 of Fig. 3 is taken, will be consolidated with the gluing of pcb board 2 for having bound gold wire 4 at the flange 31 of metal nut cap 3
Change, obtain complete chip-Size semiconductor gas sensor.As shown in Figure 10.
Because when metal-oxide semiconductor (MOS) gas sensor works, sensitive core body temperature is basic more than 200 DEG C, to subtract
Few heat is scattered and disappeared, and avoids scaling loss related sensor part, therefore microballon formula, tubular type, chip-Size semiconductor gas sensor are adopted
Suspend the mode of assembling in midair with lead, sensitive body is hanging as base central.This kind of assembling mode is easy when shaking or falling,
Cause wire breaking or sensitivity once to rupture, come off, influence products application.
MEMS semiconductor gas sensors are hanging because machined a silicon cup, heating region, and silicon cup lower edge can be with sensing
Device pedestal is adhesively fixed, and respective pad realizes that circuit is connected using gold thread binding.This mode can preferably solve mechanical stability and ask
Topic, but MEMS process equipments dependence is strong, it is relatively costly during non-large-scale production, be not adequate in existing market demand, it is necessary to
In the case of a small amount of various production, product price is subject to very big apparently higher than above-mentioned three kinds of semiconductor gas sensors, in popularization
Restriction.
The product obtained using patent of the present invention, solves microballon formula, tubular type, chip-Size semiconductor gas sensor well
Stability Analysis of Structures sex chromosome mosaicism.And it is based on the manufacturing mode of silk-screen printing and semiconductor packages, MEMS processing, equipment letter
Single, production is flexible, with low cost, but production efficiency is still very high, the semi-conductor gas sensing under existing market background preferably
The Production requirement of device.
Preferably, the form and dimension of the blind hole 21 is identical with the form and dimension of high-purity alumina ceramic substrate 11.
Preferably, flange is provided with the metal nut cap 3, the flange is connected with gold wire 4 by gluing being fixed on
Pcb board 2 gold solder disk 22 on.
Preferably, the top of the metal nut cap 3 is provided with several thermal vias 32.
Preferably, connected by high-temperature insulation glue sticking between the gas sensitization chip 1 and pcb board 2.
The above is only the preferred embodiment of the present invention, and protection scope of the present invention is not limited merely to above-mentioned implementation
Example, all technical schemes belonged under thinking of the present invention belong to protection scope of the present invention.It should be pointed out that for the art
Those of ordinary skill for, some improvements and modifications without departing from the principles of the present invention, these improvements and modifications
Should be regarded as protection scope of the present invention.
Claims (5)
1. a kind of labeling type semiconductor gas sensor, it is characterised in that：Including gas sensitization chip, the pcb board containing blind hole with
And metal nut cap, the gas sensitization chip includes high-purity alumina ceramic substrate, high-purity alumina ceramic substrate connection
There are measuring electrode gold conductive strips and adding thermal resistance gold conductive strips, the upper surface of the measuring electrode gold conductive strips is provided with air-sensitive
Material layer, the lower surface of the adding thermal resistance gold conductive strips is connected with heating resistor layer, and the adding thermal resistance gold conductive strips include
First adding thermal resistance gold conductive layer and the second adding thermal resistance gold conductive layer, are provided through on the high-purity alumina ceramic substrate
First pad and the second pad, are provided with gold wire, the first adding thermal resistance gold in first pad and the second pad
Conductive layer includes turning on adding thermal resistance gold conductive layer and first time heating on the first of connection by the gold wire in the first pad
Resistance gold conductive layer, the second adding thermal resistance gold conductive layer includes turning on the second of connection by the gold wire in the second pad
Upper adding thermal resistance gold conductive layer and second time adding thermal resistance gold conductive layer, it is conductive that heating resistor layer connects first time adding thermal resistance gold
Layer and second time adding thermal resistance gold conductive layer, the measuring electrode gold conductive strips include the first measuring electrode gold conductive layer and second
Measuring electrode gold conductive layer, gas sensitive layer the first measuring electrode of connection gold conductive layer and the second measuring electrode gold are conductive
Layer, the gas sensitization chip lid be located in blind hole and with pcb board bonding connection, be provided through several on the pcb board
Gold solder disk, first measuring electrode gold conductive layer, the second measuring electrode gold conductive layer, the first adding thermal resistance gold conductive layer and
Second adding thermal resistance gold conductive layer is bound by gold wire with a gold solder disk be connected respectively, the form and dimension of the metal nut cap
Form and dimension with pcb board is identical, and the metal nut cap covers the gold solder disk on pcb board by viscose glue.
2. a kind of labeling type semiconductor gas sensor according to claim 1, it is characterised in that：The shape of the blind hole
And size is identical with the form and dimension of high-purity alumina ceramic substrate.
3. a kind of labeling type semiconductor gas sensor according to claim 1, it is characterised in that：In the metal nut cap
Flange is provided with, the flange is fixed on the gold solder disk for being connected with the pcb board of gold wire by gluing.
4. a kind of labeling type semiconductor gas sensor according to claim 3, it is characterised in that：The metal nut cap
Top is provided with several thermal vias.
5. a kind of labeling type semiconductor gas sensor according to claim 1, it is characterised in that：The gas sensitization core
Connected by high-temperature insulation glue sticking between piece and pcb board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710238258.9A CN106872532A (en) | 2017-04-13 | 2017-04-13 | A kind of labeling type semiconductor gas sensor |
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| CN201710238258.9A CN106872532A (en) | 2017-04-13 | 2017-04-13 | A kind of labeling type semiconductor gas sensor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110482483A (en) * | 2019-08-07 | 2019-11-22 | 北京自动化控制设备研究所 | Sensitive structure patch system and method for MEMS device |
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