CN106855893A - A kind of method and device for obtaining memory domain power supply main line - Google Patents

A kind of method and device for obtaining memory domain power supply main line Download PDF

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Publication number
CN106855893A
CN106855893A CN201510907233.4A CN201510907233A CN106855893A CN 106855893 A CN106855893 A CN 106855893A CN 201510907233 A CN201510907233 A CN 201510907233A CN 106855893 A CN106855893 A CN 106855893A
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power supply
rectangle
mark
main line
supply main
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CN106855893B (en
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张爱林
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Spreadtrum Communications Shanghai Co Ltd
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Spreadtrum Communications Shanghai Co Ltd
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00Computer-aided design [CAD]
    • G06F30/30Circuit design
    • G06F30/39Circuit design at the physical level

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  • Computer Hardware Design (AREA)
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Abstract

The present invention provides a kind of method and device for obtaining memory domain power supply main line.Methods described includes:Power supply main line mark is added in each domain elementary cell, the power supply main line mark includes mark rectangle and power supply mark;Each domain elementary cell is spliced according to domain programming stitching algorithm, top layer unit is formed, the power supply main line mark in each domain elementary cell is marked as the power supply main line of the top layer unit;Power supply main line mark according to the top layer unit, calculates and draws power supply main line.The present invention can solve the problem that the power supply main line of memory elementary cell and the technical problem of programmed method close-coupled.

Description

A kind of method and device for obtaining memory domain power supply main line
Technical field
The present invention relates to memory technology field, more particularly to a kind of side for obtaining memory domain power supply main line Method and device.
Background technology
With the continuous progress of semiconductor fabrication process and IC design ability, system level chip The memory number used in (System-on-Chip, SoC) is increasing, due in same design The memory for needing of all sizes or structure different, designs these and stores with the method for full custom completely Device becomes extremely difficult.Memory compiler just turns into and is used for generating having for different size and the memory of function Effect instrument and be widely used.
Power supply for memory is set, and in the power source planning of SoC, connects the simple layer of memory macro unit Secondary source line needs the direction of determination, so the domain and LEF files of the generation of memory compiler need to provide The power supply main line in complete determination direction is connected for power source planning instrument, and memory compiler generally provides square The power supply main line metal level of shape.It is by depositing that memory compiler forms power supply main line in currently available technology It is artificial in advance in reservoir elementary cell to draw power supply main line, then it is programmed into memory macro by way of splicing In unit.
Realize it is of the invention during, inventor find at least there is following technical problem in the prior art: The power supply main line of memory elementary cell and programmed method close-coupled.Due to the power supply of memory elementary cell Main line and programmed method close-coupled, so as to cause the power supply main line for drawing sizing in memory elementary cell not Adapt to the change of programming mode;The domain programming of different memory compilers may have different units to spell Mode is connect, so causes the workload of the hand drawn power supply main line in memory elementary cell than larger; , it is necessary to scan all elementary cells comprising power supply main line, speed is slow, causes to deposit during extraction LEF files The efficiency of reservoir compiler is low.
The content of the invention
A kind of method and device of acquisition memory domain power supply main line that the present invention is provided, can solve the problem that storage The power supply main line of device elementary cell and the technical problem of programmed method close-coupled.
In a first aspect, the present invention provides a kind of method for obtaining memory domain power supply main line, methods described bag Include:
Power supply main line mark is added in each domain elementary cell, the power supply main line mark includes marking rectangle Identified with power supply;
Each domain elementary cell is spliced according to domain programming stitching algorithm, top layer unit is formed, Power supply main line mark in each domain elementary cell is marked as the power supply main line of the top layer unit;
Power supply main line mark according to the top layer unit, calculates and draws power supply main line.
Alternatively, it is described according to the top layer when the mark rectangle identified with same power supplies occurs intersecting Power supply main line mark in unit, calculating and draw power supply main line includes:
When the power supply main line of horizontal direction is drawn, the multiple mark rectangles that will be identified with same power supplies are in water Square covering merging is carried out upwards, the rectangle after merging as the metal level of horizontal direction power supply main line will be covered Rectangle;Other mark squares that there are same power supplies to identify that rectangle after merging with covering does not intersect Shape also serves as the metal level rectangle of horizontal direction power supply main line.
Alternatively, it is described according to the top layer when the mark rectangle identified with same power supplies occurs intersecting Power supply main line mark in unit, calculating and draw power supply main line includes:
When the power supply main line of vertical direction is drawn, first by 90 degree of the top layer unit rotate counterclockwise, will have The multiple mark rectangles for having same power supplies to identify carry out covering merging in the horizontal direction, then top layer unit is suitable Hour hands are rotated by 90 °, and will cover metal level rectangle of the rectangle after merging as vertical direction power supply main line;Will Other mark rectangles with same power supplies mark that rectangle after merging with covering does not intersect are also served as The metal level rectangle of vertical direction power supply main line.
Alternatively, covered in the horizontal direction in the multiple mark rectangles that will be identified with same power supplies Before covering simultaneously, methods described also includes:
By the mark rectangular extension on top layer unit to macroelement width.
Alternatively, the multiple mark rectangles that will be identified with same power supplies are covered in the horizontal direction Merging includes:
The mark rectangle with same power supplies mark to occurring intersecting carries out covering merging, forms covering rectangle;
If covering rectangle and other mark rectangle intersections with same power supplies mark, will cover rectangle and institute Stating other mark rectangles carries out covering merging, forms new covering rectangle;
If the covering rectangle with same power supplies mark occurs to intersect, intersecting covering rectangle is covered Merge, form new covering rectangle.
Alternatively, it is described according to the top when the mark rectangle identified with same power supplies does not occur intersecting Power supply main line mark in layer unit, calculating and draw power supply main line includes:
Each mark rectangle is identified the metal level rectangle of corresponding power supply main line as the power supply.
Alternatively, in the metal that each mark rectangle is identified corresponding power supply main line as the power supply Before layer rectangle, methods described also includes:
By the mark rectangular extension on top layer unit to macroelement width.
Alternatively, the domain programming stitching algorithm is the stitching algorithm of domain elementary cell in domain programming.
Second aspect, the present invention provides a kind of device for obtaining memory domain power supply main line, described device bag Include:
Adding device, for adding power supply main line mark, the power supply main line mark in each domain elementary cell Note includes mark rectangle and power supply mark;
Concatenation unit, for each domain elementary cell to be spliced according to domain programming stitching algorithm, Top layer unit is formed, the power supply main line in each domain elementary cell is marked as the electricity of the top layer unit Source main line mark;
Calculating and plotting unit, for being marked according to the power supply main line of the top layer unit, calculates and draws power supply Main line.
Alternatively, the calculating and plotting unit, for there is phase when the mark rectangle with same power supplies mark During friendship, when the power supply main line of horizontal direction is drawn, the multiple mark rectangles that will be identified with same power supplies exist Covering merging is carried out in horizontal direction, metal of the rectangle after merging as horizontal direction power supply main line will be covered Layer rectangle;Other marks that there are same power supplies to identify that rectangle after merging with covering does not intersect Rectangle also serves as the metal level rectangle of horizontal direction power supply main line.
Alternatively, the calculating and plotting unit, for there is phase when the mark rectangle with same power supplies mark During friendship, when the power supply main line of vertical direction is drawn, first by 90 degree of the top layer unit rotate counterclockwise, will Multiple mark rectangles with same power supplies mark carry out covering merging in the horizontal direction, then by the top layer Unit dextrorotation turn 90 degrees, and will cover metal level square of the rectangle after merging as vertical direction power supply main line Shape;Other mark rectangles that there are same power supplies to identify that rectangle after merging with covering does not intersect Also serve as the metal level rectangle of vertical direction power supply main line.
Alternatively, described device also includes the first expanding element, is incited somebody to action described for the calculating and plotting unit Before multiple mark rectangles with same power supplies mark carry out covering merging in the horizontal direction, by top layer list Mark rectangular extension in unit is to macroelement width.
Alternatively, the calculating and plotting unit, for for there is the intersecting mark identified with same power supplies Note rectangle carries out covering merging, forms covering rectangle;When covering rectangle and other that there are same power supplies to identify During mark rectangle intersection, covering rectangle is carried out into covering with described other mark rectangles and is merged, form new covering Lid rectangle;When the covering rectangle identified with same power supplies occurs intersecting, intersecting covering rectangle is carried out Covering merges, and forms new covering rectangle.
Alternatively, the calculating and plotting unit, for not occurring when the mark rectangle with same power supplies mark When intersecting, each mark rectangle is identified the metal level rectangle of corresponding power supply main line as the power supply.
Alternatively, described device also includes the second expanding element, is incited somebody to action described for the calculating and plotting unit Before each mark rectangle identifies the metal level rectangle of corresponding power supply main line as the power supply, by top layer list Mark rectangular extension in unit is to macroelement width.
Alternatively, the domain programming stitching algorithm is the stitching algorithm of domain elementary cell in domain programming.
A kind of method and device for obtaining memory domain power supply main line provided in an embodiment of the present invention, by domain Power supply main line draw and domain program independent (decoupling) so that the exploitation of memory compiler is more clever It is living;Power supply main line is only drawn in top layer unit, it is not necessary to the electricity of sizing is drawn in memory elementary cell Source main line, reduces the workload of memory compiler;Simultaneously when LEF files are extracted, to power supply main line The calculating of metal level rectangle is only carried out in top layer unit, improves the speed for extracting LEF files.
Brief description of the drawings
Fig. 1 is the structural representation of one embodiment of the invention memory domain power supply main line;
Fig. 2 is the flow chart that one embodiment of the invention obtains memory domain power supply main line method;
Fig. 3 a with the addition of the structural representation of the domain elementary cell of power supply main line mark for one embodiment of the invention Figure;
Fig. 3 b are the structural representation that one embodiment of the invention domain elementary cell is spliced to form top layer unit;
Fig. 3 c are the power supply main line Sign mosaics of one embodiment of the invention top layer unit into power supply main line metal level square The structural representation of shape;
Fig. 4 a are the multiple mark rectangular configuration schematic diagrames during one embodiment of the invention mark rectangle covering merges;
Fig. 4 b are to mark rectangle intersection covering to merge formation during one embodiment of the invention mark rectangle covering merges to cover The structural representation of lid rectangle;
Fig. 4 c are to cover rectangle with mark rectangle intersection covering during one embodiment of the invention mark rectangle covering merges Merging forms the structural representation of new covering rectangle;
Fig. 4 d are to cover the rectangle after merging as power supply master during one embodiment of the invention mark rectangle covering merges The structural representation of line metal level rectangle
Fig. 5 expands to the structural representation of the power supply main line of power supply width for another embodiment of the present invention;
Fig. 6 a show to the addition of the structure of the domain elementary cell of power supply main line mark in another embodiment of the present invention It is intended to;
Fig. 6 b are that power supply main line mark expands to the structural representation of macroelement width in another embodiment of the present invention Figure;
Fig. 7 is the apparatus structure schematic diagram that the present invention obtains memory macro unit power supply main line.
Specific embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the present invention Accompanying drawing in embodiment, is clearly and completely described to the technical scheme in the embodiment of the present invention, it is clear that Described embodiment is only a part of embodiment of the invention, rather than whole embodiments.Based on this hair Embodiment in bright, the institute that those of ordinary skill in the art are obtained under the premise of creative work is not made There is other embodiment, belong to the scope of protection of the invention.
Memory compiler refers to storehouse and the instrument of the series of parameters for generating memory macro unit design document The set of bag, generally comprises the modules such as domain programming, netlist programming, the generation of EDA views.Wherein domain is compiled Journey refers to domain pel to be chosen using the method for programming, is spliced, drawing etc. and to operate, this output of process Memory domain and LEF files.Memory domain is that the metal of integrated circuit, oxide and semiconductor etc. is each The method that level part is expressed as plane geometry pel.LEF representation of file memory macro cell layout summaries The ascii text file of information, comprising information such as memory pin, power supply main lines, power supply main line is to memory macro The metal level that unit is powered, is plotted in memory macro cell layout, so that SoC design personnel are doing power supply rule Connected when drawing.
As shown in figure 1, in the power source planning of SoC, the simple layer secondary source line for connecting memory macro unit is needed There is the direction of determination, so the domain and LEF files of the generation of memory compiler need to provide complete determination The memory macro unit power supply main line 11 in direction is connected for power source planning instrument, and memory compiler is typically carried For rectangular-shaped power supply main line metal level.When power source planning does vertical direction to be connected up, memory macro unit is needed There is the power supply main line of horizontal direction;Likewise, when power source planning does horizontal direction and connects up, memory macro Unit needs the power supply main line of vertical direction.Additionally, for the ease of the automation of power source planning instrument, having Shi Yaoqiu memory macro unit power supply main lines need to be covered with macroelement width as far as possible in the horizontal direction.
The present invention provides a kind of method for obtaining memory domain power supply main line, as shown in Figure 2, described to obtain The method of access to memory domain power supply main line includes:
Step S11:Power supply main line mark is added in each domain elementary cell, the power supply main line mark includes Mark rectangle and power supply mark.
When domain is programmed in drafting elementary cell, the position of connection power supply is being needed, using predefined level Addition mark rectangle, while according to different power supplys, add power supply using predefined marker word level and identify, Mark rectangle and power supply mark collectively constitute power supply main line mark.As shown in Figure 3 a, elementary cell 1 has two electricity Source main line mark, a power supply main line mark for power supply 1, a power supply main line mark for power supply 2, substantially singly The power supply main line mark of first 2 only one of which power supplys 2.
Step S12:Each domain elementary cell is spliced according to domain programming stitching algorithm, top is formed Layer unit, the power supply main line in each domain elementary cell is marked as the power supply main line of the top layer unit Mark.
The general principle of domain programming stitching algorithm is module splicing, is spliced to form since domain elementary cell Then these modules are spliced until ultimately forming top layer unit by high-level module again.Domain is programmed Domain elementary cell is spliced, to produce newly-built unit, by the power supply master of the elementary cell used by splicing Wire tag is marked as the power supply main line of newly-built unit, until being spliced to top layer unit.As shown in Figure 3 b, newly Build unit and contain elementary cell 1 and elementary cell 2, while by two power supplys of elementary cell 1 and power supply 2 Power supply main line mark as newly-built unit power supply main line mark.Power supply main line is marked in newly-built unit, Position and overlapping in elementary cell.
Step S13:Power supply main line mark according to the top layer unit, calculates and draws power supply main line.
As shown in Figure 3 c, in top layer unit, marked according to power supply main line, calculate and draw power supply main line. The covering that the computational methods of power supply main line are related to rectangle merges, using the rectangle after covering merging as power supply master The position of line, prepares to extract LEF files.
A kind of method for obtaining memory domain power supply main line provided in an embodiment of the present invention, by the power supply of domain Main line is drawn and domain programs independent (decoupling) so that the exploitation of memory compiler is more flexible;Only Power supply main line is drawn in top layer unit, it is not necessary to the power supply main line of sizing is drawn in memory elementary cell, Reduce the workload of memory compiler;Simultaneously when LEF files are extracted, to power supply main line metal level square The calculating of shape is only carried out in top layer unit, improves the speed for extracting LEF files.
Alternatively, it is described according to the top layer when the mark rectangle identified with same power supplies occurs intersecting Power supply main line mark in unit, calculating and draw power supply main line includes:
When the power supply main line of horizontal direction is drawn, the multiple mark rectangles that will be identified with same power supplies are in water Square covering merging is carried out upwards, the rectangle after merging as the metal level of horizontal direction power supply main line will be covered Rectangle;Other mark squares that there are same power supplies to identify that rectangle after merging with covering does not intersect Shape also serves as the metal level rectangle of horizontal direction power supply main line.
Alternatively, covering merging is carried out to there is the intersecting mark rectangle with same power supplies mark, is formed Covering rectangle;
If covering rectangle and other mark rectangle intersections with same power supplies mark, will cover rectangle and institute Stating other mark rectangles carries out covering merging, forms new covering rectangle;
If the covering rectangle with same power supplies mark occurs to intersect, intersecting covering rectangle is covered Merge, form new covering rectangle.
For the method that multiple mark rectangle carries out covering merging in the horizontal direction, such as accompanying drawing 4a-4d show One group echo rectangle of same power supply mark carries out covering in the horizontal direction the process of merging.Such as accompanying drawing 4a institutes Show, A, B, C, D are the mark rectangle of four power supply main lines mark of same power supply mark, mark rectangle C Intersect with mark rectangle D, the covering rectangle of overlay marks rectangle C and mark rectangle D is formed, in Fig. 4 b Dash area.Covering rectangle is overlay marks rectangle C and the minimum vertex-covering single rectangular of mark rectangle D, that is, take Mark rectangle C and mark the minimum value of the X-coordinate in the lower left corner of rectangle D as the X in the lower left corner of covering rectangle Coordinate, takes the minimum value of Y-coordinate in the lower left corner of mark rectangle C and mark rectangle D as the left side for covering rectangle The Y-coordinate of inferior horn;The maximum of upper right corner X-coordinate of mark rectangle C and mark rectangle D is taken as covering rectangle The upper right corner X-coordinate, take the maximum of upper right corner Y-coordinate of mark rectangle C and mark rectangle D as covering The Y-coordinate in the upper right corner of rectangle.
Covering rectangle and mark rectangle B after mark rectangle C and the D covering merging of mark rectangle intersect, then institute State covering rectangle and with mark rectangle B cover and merge to form new covering rectangle, as described in accompanying drawing 4c.Equally Described new covering rectangle be the covering covering rectangle and the minimum vertex-covering single rectangular for marking rectangle B. The other rectangle intersections of mark rectangle A discord, the corresponding rectangles of mark rectangle A and mark rectangle B, C, D The rectangle of formation after merging is covered as the metal level rectangle of power supply main line, as shown in accompanying drawing 4d.Subsequent extracted During LEF files, the two rectangular coordinates are directly read.
When the mark rectangle identified with same power supplies occurs intersecting, multiple mark rectangle is covered to merge and formed The metal level rectangle of power supply main line also includes situation:Mark rectangle covering merges the covering rectangle and other for being formed Covering rectangle intersection, then intersecting covering rectangle is carried out covering merging, form new covering rectangle.
Alternatively, it is described according to the top when the mark rectangle identified with same power supplies does not occur intersecting Power supply main line mark in layer unit, calculating and draw power supply main line includes:
Each mark rectangle is identified the metal level rectangle of corresponding power supply main line as the power supply.
When the power supply main line of horizontal direction is drawn, for the ease of the automation of power source planning instrument, sometimes Seek survival reservoir macroelement power supply main line need in the horizontal direction as far as possible be covered with memory macro cell width;Together Sample when draw vertical direction power supply main line when, sometimes require that memory macro unit power supply main line need exist It is covered with memory macro cell height as far as possible in vertical direction.As shown in Figure 5, for expanding to macroelement width Power supply main line:
When the mark rectangle on top layer unit with same power supplies mark occurs intersecting, alternatively, described The multiple mark rectangles that will be identified with same power supplies carry out covering merging in the horizontal direction before by top layer list Mark rectangular extension in unit is to macroelement width.
When the mark rectangle on top layer unit with same power supplies mark does not occur intersecting, alternatively, in institute State before each mark rectangle is identified into the metal level rectangle of corresponding power supply main line as the power supply, will push up Mark rectangular extension on layer unit is to macroelement width.
The mark rectangle of power supply main line mark merges the metal level for forming power supply main line in covering i.e. in top layer unit Before rectangle, the mark rectangle of power supply main line mark needs to expand to macroelement width.Then according to foregoing Covering merging method carries out covering merging, forms power supply main line metal level rectangle.As shown in fig. 6, A, B, C, D are the mark rectangle of four power supply main lines mark of same power supply mark, first mark rectangle A, B, C, D expands to the width of macroelement in the horizontal direction, and intersecting rectangle then is carried out into covering merging, forms electricity Source main line metal level rectangle.When the corresponding mark rectangle of top layer unit power supply main line mark is all non-intersect, Each mark rectangle on top layer unit first expands to macroelement width, using the rectangle after extension as power supply master Line metal level rectangle.
Alternatively, when the power supply main line of vertical direction is drawn, first by the top layer unit rotate counterclockwise 90 Degree, the multiple mark rectangles that will be identified with same power supplies carry out covering merging in the horizontal direction, then by institute State top layer unit dextrorotation to turn 90 degrees, gold of the rectangle after merging as vertical direction power supply main line will be covered Category layer rectangle.Other marks that there are same power supplies to identify that rectangle after merging with covering does not intersect Note rectangle also serves as the metal level rectangle of vertical direction power supply main line.It is described herein to be identified with same power supplies Multiple mark rectangles carry out covering the methods of merging and foregoing teachings in the horizontal direction in draw horizontal direction Covering merging method in power supply main line is consistent, will not be repeated here.
Alternatively, the domain programming stitching algorithm is the stitching algorithm of domain elementary cell in domain programming.
Domain programming stitching algorithm is the stitching algorithm of domain elementary cell in domain programming, that is, refer in domain base During this unit spliced forms top layer unit, domain elementary cell how is selected, spliced in which way Domain elementary cell, to adjustment of number and position of domain elementary cell etc..
The embodiment of the present invention also provides a kind of device for obtaining memory domain power supply main line, as shown in fig. 7, Described device includes:
Adding device 71, for adding power supply main line mark, the power supply main line in each domain elementary cell Mark includes mark rectangle and power supply mark;
Concatenation unit 72, for each domain elementary cell to be spliced according to domain programming stitching algorithm, Top layer unit is formed, the power supply main line in each domain elementary cell is marked as the electricity of the top layer unit Source main line mark;
Calculating and plotting unit 73, for being marked according to the power supply main line of the top layer unit, calculates and draws electricity Source main line.
For adding device 71, domain be programmed in drafting elementary cell when, need connect power supply position, Mark rectangle is added using predefined level, while according to different power supplys, using predefined marker word Level addition power supply mark, mark rectangle and power supply mark collectively constitute power supply main line mark, as shown in Figure 3 a, Elementary cell 1 has two power supply main lines to mark, a power supply main line mark for power supply 1, a power supply for power supply 2 Main line is marked, the power supply main line mark of the only one of which power supply 2 of elementary cell 2.
For concatenation unit 72, the general principle of domain programming stitching algorithm is module splicing, basic from domain Unit starts to be spliced to form high-level module, and these modules are spliced until ultimately forming top again then Layer unit.Domain elementary cell is spliced in domain programming, to produce newly-built unit, by used by splicing The power supply main line mark of domain elementary cell is marked as the power supply main line of newly-built unit, until being spliced to top layer Unit.As shown in Figure 3 b, newly-built unit contains elementary cell 1 and elementary cell 2, while by two bases The power supply 1 of this unit and the power supply main line mark of power supply 2 are marked as the power supply main line of newly-built unit.Power supply The position that main line is marked in newly-built unit and overlapping in elementary cell.
For calculating and plotting unit 73, as shown in Figure 3 c, in top layer unit, marked according to power supply main line, Calculate and draw power supply main line.The computational methods of power supply main line are related to mark the covering of rectangle to merge, covering Rectangle after covering simultaneously is prepared as the position of power supply main line to extract LEF files.
A kind of device for obtaining memory domain power supply main line provided in an embodiment of the present invention, by the power supply of domain Main line is drawn and domain programs independent (decoupling) so that the exploitation of memory compiler is more flexible;Together When due to only in top layer unit draw power supply main line, it is not necessary in memory elementary cell draw sizing Power supply main line, reduces the workload of memory compiler;Simultaneously when LEF files are extracted, to power supply master The calculating of line metal level rectangle is only carried out in top layer unit, improves the speed for extracting LEF files.
Alternatively, the calculating and plotting unit 73, for occurring when the mark rectangle with same power supplies mark When intersecting, when the power supply main line of horizontal direction is drawn, the multiple mark rectangles that will be identified with same power supplies Covering merging is carried out in the horizontal direction, will cover gold of the rectangle after merging as horizontal direction power supply main line Category layer rectangle;Other marks that there are same power supplies to identify that rectangle after merging with covering does not intersect Note rectangle also serves as the metal level rectangle of horizontal direction power supply main line.
Alternatively, the calculating and plotting unit 73, for for occurring intersecting to be identified with same power supplies Mark rectangle carries out covering merging, forms covering rectangle;When covering rectangle and its with same power supplies mark When it marks rectangle intersection, covering rectangle is carried out into covering with described other mark rectangles and is merged, formed new Covering rectangle;When the covering rectangle identified with same power supplies occurs intersecting, intersecting covering rectangle is entered Row covering merges, and forms new covering rectangle.
For the method that multiple mark rectangle carries out covering merging in the horizontal direction, such as accompanying drawing 4a-4d show One group echo rectangle of same power supply mark carries out covering in the horizontal direction the process of merging.Such as accompanying drawing 4a institutes Show, A, B, C, D are the mark rectangle of four power supply main lines mark of same power supply mark, mark rectangle C Intersect with mark rectangle D, the covering rectangle of overlay marks rectangle C and mark rectangle D is formed, in Fig. 4 b Dash area.Covering rectangle is overlay marks rectangle C and the minimum vertex-covering single rectangular of mark rectangle D, that is, take Mark rectangle C and mark the minimum value of the X-coordinate in the lower left corner of rectangle D as the X in the lower left corner of covering rectangle Coordinate, takes the minimum value of Y-coordinate in the lower left corner of mark rectangle C and mark rectangle D as the left side for covering rectangle The Y-coordinate of inferior horn;The maximum of upper right corner X-coordinate of mark rectangle C and mark rectangle D is taken as covering rectangle The upper right corner X-coordinate, take the maximum of upper right corner Y-coordinate of mark rectangle C and mark rectangle D as covering The Y-coordinate in the upper right corner of rectangle.
Covering rectangle and mark rectangle B after mark rectangle C and the D covering merging of mark rectangle intersect, then institute State covering rectangle and with mark rectangle B cover and merge to form new covering rectangle, as described in accompanying drawing 4c.Equally Described new covering rectangle be the covering covering rectangle and the minimum vertex-covering single rectangular for marking rectangle B. The other rectangle intersections of mark rectangle A discord, the corresponding rectangles of mark rectangle A and mark rectangle B, C, D The rectangle of formation after merging is covered as the metal level rectangle of power supply main line, as shown in accompanying drawing 4d.Subsequent extracted During LEF files, the two rectangular coordinates are directly read.
When the mark rectangle identified with same power supplies occurs intersecting, multiple mark rectangle is covered to merge and formed The metal level rectangle of power supply main line also includes situation:Mark rectangle covering merges the covering rectangle and other for being formed Covering rectangle intersection, then intersecting covering rectangle is carried out covering merging, form new covering rectangle.
Alternatively, the calculating and plotting unit 73, for not sent out when the mark rectangle with same power supplies mark When raw intersecting, each mark rectangle is identified the metal level rectangle of corresponding power supply main line as the power supply.
When the power supply main line of horizontal direction is drawn, for the ease of the automation of power source planning instrument, sometimes Seek survival reservoir macroelement power supply main line need in the horizontal direction as far as possible be covered with memory macro cell width;Together Sample when draw vertical direction power supply main line when, sometimes require that memory macro unit power supply main line need exist It is covered with memory macro cell height as far as possible in vertical direction.As shown in Figure 5, for expanding to macroelement width Power supply main line:
When the mark rectangle on top layer unit with same power supplies mark occurs intersecting, alternatively, also include First expanding element, for marking rectangles in the horizontal direction in the multiple that will be identified with same power supplies By the mark rectangular extension on top layer unit to macroelement width before carrying out covering merging.
When the mark rectangle on top layer unit with same power supplies mark does not occur intersecting, alternatively, also wrap The second expanding element is included, for each mark rectangle to be identified into corresponding power supply master as the power supply described Before the metal level rectangle of line, by the mark rectangular extension on top layer unit to macroelement width.
I.e. in top layer unit power supply main line mark rectangle covering merge formed power supply main line metal level rectangle it Before, power supply main line mark rectangle needs to expand to macroelement width.Then according to foregoing covering merging method Covering merging is carried out, power supply main line metal rectangular is formed.As shown in fig. 6b, A, B, C, D are same electricity The mark rectangle of four power supply main lines mark of source mark, first mark rectangle A, B, C, D in the horizontal direction On expand to the width of macroelement, intersecting rectangle is then carried out into covering merging, form power supply main line metal Layer rectangle.
Alternatively, the calculating and plotting unit 73, when the power supply main line of vertical direction is drawn, first will be described 90 degree of top layer unit rotate counterclockwise, the multiple mark rectangles that will be identified with same power supplies are in the horizontal direction Carry out covering merging, then the top layer unit dextrorotation turn 90 degrees, will cover merge after rectangle as The metal level rectangle of vertical direction power supply main line.Other that will do not intersect with the rectangle after covering merging Mark rectangle with same power supplies mark also serves as the metal level rectangle of vertical direction power supply main line.This place Multiple mark rectangles that stating will identify with same power supplies carry out covering in the horizontal direction the method for merging with it is preceding State the covering merging method drawn in horizontal direction power supply main line in content consistent, will not be repeated here.
Alternatively, the domain programming stitching algorithm is the stitching algorithm of domain elementary cell in domain programming.
Domain programming stitching algorithm is the stitching algorithm of domain elementary cell in domain programming, that is, refer in domain base During this unit spliced forms top layer unit, domain elementary cell how is selected, spliced in which way Domain elementary cell, to adjustment of number and position of domain elementary cell etc..
The above, specific embodiment only of the invention, but protection scope of the present invention is not limited to This, any one skilled in the art the invention discloses technical scope in, can readily occur in Change or replacement, should all be included within the scope of the present invention.Therefore, protection scope of the present invention Should be defined by scope of the claims.

Claims (16)

1. it is a kind of obtain memory domain power supply main line method, it is characterised in that including:
Power supply main line mark is added in each domain elementary cell, the power supply main line mark includes marking rectangle Identified with power supply;
Each domain elementary cell is spliced according to domain programming stitching algorithm, top layer unit is formed, Power supply main line mark in each domain elementary cell is marked as the power supply main line of the top layer unit;
Power supply main line mark according to the top layer unit, calculates and draws power supply main line.
2. it is according to claim 1 obtain memory domain power supply main line method, it is characterised in that When the mark rectangle identified with same power supplies occurs intersecting, the power supply in the top layer unit Main line is marked, and calculating and draw power supply main line includes:
When the power supply main line of horizontal direction is drawn, the multiple mark rectangles that will be identified with same power supplies are in water Square covering merging is carried out upwards, the rectangle after merging as the metal level of horizontal direction power supply main line will be covered Rectangle;Other mark squares that there are same power supplies to identify that rectangle after merging with covering does not intersect Shape also serves as the metal level rectangle of horizontal direction power supply main line.
3. it is according to claim 1 obtain memory domain power supply main line method, it is characterised in that When the mark rectangle identified with same power supplies occurs intersecting, the power supply in the top layer unit Main line is marked, and calculating and draw power supply main line includes:
When the power supply main line of vertical direction is drawn, first by 90 degree of the top layer unit rotate counterclockwise, will have The multiple mark rectangles for having same power supplies to identify carry out covering merging in the horizontal direction, then top layer unit is suitable Hour hands are rotated by 90 °, and will cover metal level rectangle of the rectangle after merging as vertical direction power supply main line;Will Other mark rectangles with same power supplies mark that rectangle after merging with covering does not intersect are also served as The metal level rectangle of vertical direction power supply main line.
4. according to Claims 2 or 3 acquisition memory domain power supply main line method, it is characterised in that Before the multiple mark rectangles that will be identified with same power supplies carry out covering merging in the horizontal direction, Methods described also includes:
By the mark rectangular extension on top layer unit to macroelement width.
5. it is according to claim 4 obtain memory domain power supply main line method, it is characterised in that The multiple mark rectangles that will be identified with same power supplies carry out covering merging in the horizontal direction to be included:
The mark rectangle with same power supplies mark to occurring intersecting carries out covering merging, forms covering rectangle;
If covering rectangle and other mark rectangle intersections with same power supplies mark, will cover rectangle and institute Stating other mark rectangles carries out covering merging, forms new covering rectangle;
If the covering rectangle with same power supplies mark occurs to intersect, intersecting covering rectangle is covered Merge, form new covering rectangle.
6. it is according to claim 1 obtain memory domain power supply main line method, it is characterised in that When the mark rectangle identified with same power supplies does not occur intersecting, the electricity in the top layer unit Source main line mark, calculating and draw power supply main line includes:
Each mark rectangle is identified the metal level rectangle of corresponding power supply main line as the power supply.
7. it is according to claim 6 obtain memory domain power supply main line method, it is characterised in that It is described each mark rectangle is identified into the metal level rectangle of corresponding power supply main line as the power supply before, Methods described also includes:
By the mark rectangular extension on top layer unit to macroelement width.
8. it is according to claim 1 obtain memory domain power supply main line method, it is characterised in that The domain programming stitching algorithm is the stitching algorithm of domain elementary cell in domain programming.
9. it is a kind of obtain memory domain power supply main line device, it is characterised in that including:
Adding device, for adding power supply main line mark, the power supply main line mark in each domain elementary cell Note includes mark rectangle and power supply mark;
Concatenation unit, for each domain elementary cell to be spliced according to domain programming stitching algorithm, Top layer unit is formed, the power supply main line in each domain elementary cell is marked as the electricity of the top layer unit Source main line mark;
Calculating and plotting unit, for being marked according to the power supply main line of the top layer unit, calculates and draws power supply Main line.
10. it is according to claim 9 obtain memory domain power supply main line device, it is characterised in that The calculating and plotting unit, for when the mark rectangle identified with same power supplies occurs intersecting, working as drafting During the power supply main line of horizontal direction, the multiple mark rectangles that will be identified with same power supplies are enterprising in the horizontal direction Row covering merges, and will cover metal level rectangle of the rectangle after merging as horizontal direction power supply main line;Will be with Rectangle after covering merging does not occur other intersecting, and there are mark rectangles that same power supplies are identified to also serve as water The metal level rectangle of flat directional traffic power source main line.
11. devices for obtaining memory domain power supply main line according to claim 9, it is characterised in that The calculating and plotting unit, for when the mark rectangle identified with same power supplies occurs intersecting, working as drafting During the power supply main line of vertical direction, first by 90 degree of the top layer unit rotate counterclockwise, will be with same power supplies Multiple mark rectangles of mark carry out covering merging in the horizontal direction, then by the top layer unit dextrorotation It turn 90 degrees, metal level rectangle of the rectangle after merging as vertical direction power supply main line will be covered;Will be with covering Rectangle after merging does not occur other intersecting, and there is the mark rectangle that same power supplies are identified to also serve as Vertical Square To the metal level rectangle of power supply main line.
The device of the 12. acquisition memory domain power supply main line according to claim 10 or 11, its feature Be, also including the first expanding element, for the calculating and plotting unit it is described will be with same power supplies mark Before multiple mark rectangles of knowledge carry out covering merging in the horizontal direction, by the mark rectangle on top layer unit Expand to macroelement width.
13. devices for obtaining memory domain power supply main line according to claim 12, it is characterised in that The calculating and plotting unit, for being covered for there is the intersecting mark rectangle identified with same power supplies Cover simultaneously, form covering rectangle;When covering rectangle and other mark rectangle intersections with same power supplies mark When, covering rectangle is carried out into covering with described other mark rectangles and is merged, form new covering rectangle;Work as tool When the covering rectangle for there are same power supplies to identify occurs intersecting, intersecting covering rectangle is carried out into covering merging, shape The covering rectangle of Cheng Xin.
14. devices for obtaining memory domain power supply main line according to claim 9, it is characterised in that The calculating and plotting unit, for when the mark rectangle identified with same power supplies does not occur intersecting, will be every Individual mark rectangle identifies the metal level rectangle of corresponding power supply main line as the power supply.
15. devices for obtaining memory domain power supply main line according to claim 14, it is characterised in that Also include the second expanding element, for the calculating and plotting unit it is described using each mark rectangle as described Before power supply identifies the metal level rectangle of corresponding power supply main line, the mark rectangular extension on top layer unit is arrived Macroelement width.
16. devices for obtaining memory domain power supply main line according to claim 9, it is characterised in that The domain programming stitching algorithm is the stitching algorithm of domain elementary cell in domain programming.
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