CN106848517A - A kind of encapsulation microstrip line construction of the integrated gap waveguide of new substrate - Google Patents
A kind of encapsulation microstrip line construction of the integrated gap waveguide of new substrate Download PDFInfo
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- CN106848517A CN106848517A CN201710037422.XA CN201710037422A CN106848517A CN 106848517 A CN106848517 A CN 106848517A CN 201710037422 A CN201710037422 A CN 201710037422A CN 106848517 A CN106848517 A CN 106848517A
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- microstrip line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
- H01P3/08—Microstrips; Strip lines
- H01P3/081—Microstriplines
- H01P3/082—Multilayer dielectric
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Abstract
The present invention relates to a kind of encapsulation microstrip line construction of the new integrated gap waveguide of substrate, the encapsulation microstrip line construction is by top layer dielectric-slab（1）, interlayer plate（2）With underlying dielectric plate（3）Three layers of dielectric-slab bonding are formed.Top layer dielectric-slab（1）It is provided with periodicity metallic vias（4）, upper surface is printed with metal level, and lower surface application has metal circular paster（5）；Underlying dielectric plate（3）It is provided with chamfering bending microstrip line（8、9、10、11）, its lower surface is printed with metal level.The present invention realizes the encapsulation of microstrip line, solves the problems, such as there is radiation loss, plane wave and cavity resonance in conventional microstrip line, at the same have the advantages that simple structure, size it is small, with it is wide, be lost low and Stability Analysis of Structures, it is easier to it is integrated and processing.
Description
Technical field
The present invention relates to electronic technology field, and in particular to a kind of encapsulation micro-strip knot of the new integrated gap waveguide of substrate
Structure.
Background technology
Microstrip line is a kind of transmission line for transmitting microwave signal, and it is widely used in many fields.With gold
Category waveguide is compared, and microstrip line has that small volume, lightweight, working band be wide, reliability is high and the low characteristic of manufacturing cost.Pass
There is radiation loss, plane wave and cavity resonance in system microstrip line.
Strip line and substrate integration wave-guide have a preferable performance in terms of space radiation is suppressed, but strip line it is vertical not
Symmetry can produce harmful high-order mode.Due to substrate integration wave-guide（Substrate Integrated Waveguide,
SIW）Transmission is TE10Mould, when the microstrip line of SIW and TEM/ Quasi-TEM modes is integrated, inevitably produces patten transformation to damage
Consumption, hinders circuit integrated.At present, gap waveguide（Gap Waveguide, GW）It is used to encapsulate microstrip line, restrained effectively
Space radiation and surface wave.Simultaneously as gap waveguide（GW）Middle transmission is quasi- TEM ripples, when it is integrated with microstrip line, just
In the absence of patten transformation loss.But, traditional gap waveguide（GW）It is bulky, it is unfavorable for integrated, and the company of being difficult to ensure that
Continuous the air gap is highly, relatively difficult in realization, and both expensive.
The integrated gap waveguide of substrate being recently proposed（Substrate Integrated Gap Waveguide, SIGW）,
Remain gap waveguide（GW）Advantage, largely reduce overall weight and size.SIGW by the use of dielectric-slab as
Clearance layer, it is ensured that the clearance height of stabilization.Meanwhile, SIGW is good with being simple to manufacture, low, Stability Analysis of Structures, transmission performance being lost
And bandwidth of operation characteristic wider.
The integrated gap waveguide of substrate of the invention（SIGW）To encapsulate microstrip line, can not only suppress space radiation and plane
Ripple, and help to realize the high performance-price ratio of high-performance and small size circuit design.
Present invention, by literature search, to have no and disclose report with identical of the present invention.
The content of the invention
Deficiency it is an object of the invention to overcome prior art, designs a kind of integrated of novel bending micro-strip ridge substrate
Gap waveguiding structure.
Including：Top layer dielectric-slab（1）, interlayer plate（2）, underlying dielectric plate（3）, wherein：
A, top layer dielectric-slab（1）Upper surface be printed with metal level, in dielectric-slab（1）On be equipped with periodicity metallic vias（4）, it is situated between
Scutum（1）Lower surface application have periodicity metal circular paster（5）, periodicity metallic vias and periodicity metal circular paster
（5）Mushroom-shaped electro-magnetic bandgap is constituted together（EBG）Structure；
B, interlayer plate（2）That is clearance layer, positioned at top layer dielectric-slab（1）With underlying dielectric plate（3）Centre position；
C, underlying dielectric plate（3）Upper surface is printed with zigzag microstrip line（6）, lower surface is printed with metal level；The zigzag
Microstrip line（6）It is to be formed after being bent through 90 degree twice by banding microstrip line；Zigzag microstrip line（6）Vertical component microstrip line
（7）Along Y direction, symmetrical on X-axis, X-axis overlaps with the broken line up and down of dielectric-slab；Zigzag microstrip line（6）Horizontal part
Divide microstrip line（8、9）With different length, parallel to X-axis；In zigzag microstrip line（6）Knee devise chamfering（10、
11）；In zigzag microstrip line（6）The transition line for being respectively arranged at two ends with matching feature（14）And transition line（15）, make substrate collection
Characteristic impedance into the encapsulation microstrip line of gap waveguide keeps stabilization with frequency change, is easy to integrated；
D, a kind of new integrated gap waveguide of substrate encapsulation microstrip line construction three layers of dielectric-slab dielectric constant it is identical,
Three layers of dielectric-slab are adhesively-bonded together to form the encapsulation microstrip line construction of the integrated gap waveguide of new substrate of the invention.The top layer
Dielectric-slab（1）With interlayer plate（2）Length and width is identical；Underlying dielectric plate（3）Width is wide with upper two layers dielectric-slab
Degree is identical, but length is slightly longer, makes gradual change microstrip line（14、15）In naked state, in order to test.
As described above, the encapsulation microstrip line construction top layer dielectric-slab of the new integrated gap waveguide of substrate（1）Thickness ratio in
Interbed dielectric-slab（2）With underlying dielectric plate（3）Thickness will thickness, to reduce conduction loss, reduce space radiation and surface wave, obtain
Obtain bandwidth wider.
The encapsulation microstrip line construction of the new integrated gap waveguide of substrate as described above, adjusts top layer dielectric-slab（1）And bottom
Layer dielectric-slab（3）Dielectric constant can realize being changed the bandwidth of operation of the encapsulation microstrip line；Increase top layer dielectric-slab（1）
Dielectric constant, will reduce microstrip line high-frequency cut-off frequency；Increase underlying dielectric plate（3）Dielectric constant, will simultaneously reduce micro-
High-frequency cut-off frequency and low-frequency cut-off frequency with line.
The encapsulation microstrip line construction of the new integrated gap waveguide of substrate as described above, when top layer dielectric-slab（1）Dielectric
Constant is reached after 10, and low-frequency cut-off frequency and high-frequency cut-off frequency will not be with underlying dielectric plates（3）Dielectric constant
Change and change.
As described above, the interlayer plate of the encapsulation microstrip line construction of the new integrated gap waveguide of substrate（2）Instead of not
The air gap of stabilization, ensures upper and lower two layer medium plate（1、3）Between have a clearance height for stabilization.
As described above, the encapsulation microstrip line construction of the new integrated gap waveguide of substrate increases underlying dielectric plate（3）Thickness
The high-frequency cut-off frequency of microstrip line can be reduced；When underlying dielectric plate（3）Thickness it is smaller when, increase underlying dielectric plate（3）Thickness
Spend the low-frequency cut-off frequency by microstrip line is increased；When underlying dielectric plate（3）Thickness increase to a certain extent after, with bottom be situated between
Scutum（3）Thickness increase, the low-frequency cut-off frequency of microstrip line will no longer change.
As described above, the encapsulation microstrip line construction top layer dielectric-slab of the new integrated gap waveguide of substrate（1）, interlayer
Plate（2）With underlying dielectric plate（3）Bonded together by glue and realize encapsulation to conventional microstrip line, different from the envelope of traditional GW
PMC lids make to be screwed each layer in dress, and this contributes to the integrated of integrated circuit.
As described above, the encapsulation microstrip line construction of the new integrated gap waveguide of substrate works as top layer dielectric-slab（1）Thickness surpass
After crossing 0.6mm, the change of the dielectric constant in intermediate layer will not affect that the bandwidth of microstrip line.
As described above, the encapsulation microstrip line construction chamfering of the new integrated gap waveguide of substrate（10、11）Place is designed with 45 degree
Chamfering line（12、13）, suitable chamfering line length is selected by the discontinuity and resonance problems when effectively removal microstrip line bends.
As described above, the encapsulation microstrip line construction of the new integrated gap waveguide of substrate is to underlying dielectric plate（3）Loss angle
Tangent requirement is higher, need to as far as possible select the small dielectric-slab of loss angle tangent, but to top layer dielectric-slab（1）Loss angle tangent requirement
It is not high, the dielectric-slab of less expensive lossy may be selected, with reduces cost.
As described above, the new integrated gap waveguide transmission Quasi-TEM mode of substrate, is conducive to and the microstrip line of TEM mode
It is integrated, patten transformation loss when reducing integrated.
As described above, the encapsulation microstrip line construction dielectric-slab of the new integrated gap waveguide of substrate（1）With cycle via（4）With
And metal patch（5）Composition perfect magnetic conductor（Perfect magnetic conductor, PMC）Layer, effectively reduces space
Radiation loss, it is suppressed that plane wave, while solving the problems, such as air resonance.
The present invention compared with prior art, has the following advantages that：
1st, radiation loss and plane wave in conventional package microstrip line are solved the problems, such as；
2nd, with small size, low section is easy of integration, easy processing；
3rd, Stability Analysis of Structures, transmission performance is good；
4th, with working band wider.
Brief description of the drawings
Fig. 1 is the encapsulation microstrip line of the integrated gap waveguide of substrate of the present invention.
Fig. 2 is the upper surface figure of the top layer dielectric-slab of the encapsulation microstrip line of the integrated gap waveguide of substrate of the present invention.
Fig. 3 is the lower surface figure of the top layer dielectric-slab of the encapsulation microstrip line of the integrated gap waveguide of substrate of the present invention.
Fig. 4 is the structure chart of the interlayer plate of the encapsulation microstrip line of the integrated gap waveguide of substrate of the present invention.
Fig. 5 is the upper surface figure of the underlying dielectric plate of the encapsulation microstrip line of the integrated gap waveguide of substrate of the present invention.
Fig. 6 is the lower surface figure of the underlying dielectric plate of the encapsulation microstrip line of the integrated gap waveguide of substrate of the present invention.
Fig. 7 is emulation and the test chart of encapsulation the microstrip line S11 and S21 of the integrated gap waveguide of substrate of the present invention.
Fig. 8 is emulation and the test enlarged drawing of the encapsulation microstrip line S21 of the integrated gap waveguide of substrate of the present invention.
Specific embodiment
Technical scheme is described in further detail with reference to specific embodiment.
As shown in figures 1 to 6, a kind of encapsulation microstrip line construction of the integrated gap waveguide of new substrate, including：Top layer dielectric-slab
（1）, interlayer plate（2）, underlying dielectric plate（3）, wherein：
A, top layer dielectric-slab（1）Upper surface be printed with metal level, in dielectric-slab（1）On be equipped with periodicity metallic vias（4）, it is situated between
Scutum（1）Lower surface application have periodicity metal circular paster（5）, periodicity metallic vias and periodicity metal circular paster
（5）Mushroom-shaped electro-magnetic bandgap is constituted together（EBG）Structure；
B, interlayer plate（2）That is clearance layer, positioned at top layer dielectric-slab（1）With underlying dielectric plate（3）Centre position；
C, underlying dielectric plate（3）Upper surface is printed with zigzag microstrip line（6）, lower surface is printed with metal level；The zigzag
Microstrip line（6）It is to be formed after being bent through 90 degree twice by banding microstrip line；Zigzag microstrip line（6）Vertical component microstrip line
（7）Along Y direction, symmetrical on X-axis, X-axis overlaps with the broken line up and down of dielectric-slab；Zigzag microstrip line（6）Horizontal part
Divide microstrip line（8、9）With different length, parallel to X-axis；In zigzag microstrip line（6）Knee devise chamfering（10、
11）；In zigzag microstrip line（6）The transition line for being respectively arranged at two ends with matching feature（14）And transition line（15）, make substrate collection
Characteristic impedance into the encapsulation microstrip line of gap waveguide keeps stabilization with frequency change, is easy to integrated；
D, a kind of new integrated gap waveguide of substrate encapsulation microstrip line construction three layers of dielectric-slab dielectric constant it is identical,
Three layers of dielectric-slab are adhesively-bonded together to form the encapsulation microstrip line construction of the integrated gap waveguide of new substrate of the invention.The top layer
Dielectric-slab（1）With interlayer plate（2）Length and width is identical；Underlying dielectric plate（3）Width is wide with upper two layers dielectric-slab
Degree is identical, but length is slightly longer, makes gradual change microstrip line（14、15）In naked state, in order to test.
As described above, the encapsulation microstrip line construction top layer dielectric-slab of the new integrated gap waveguide of substrate（1）Thickness ratio in
Interbed dielectric-slab（2）With underlying dielectric plate（3）Thickness will thickness, to reduce conduction loss, reduce space radiation and surface wave, obtain
Obtain bandwidth wider.
The encapsulation microstrip line construction of the new integrated gap waveguide of substrate as described above, adjusts top layer dielectric-slab（1）And bottom
Layer dielectric-slab（3）Dielectric constant can realize being changed the bandwidth of operation of the encapsulation microstrip line；Increase top layer dielectric-slab（1）
Dielectric constant, will reduce microstrip line high-frequency cut-off frequency；Increase underlying dielectric plate（3）Dielectric constant, will simultaneously reduce micro-
High-frequency cut-off frequency and low-frequency cut-off frequency with line.
The encapsulation microstrip line construction of the new integrated gap waveguide of substrate as described above, when top layer dielectric-slab（1）Dielectric
Constant is reached after 10, and low-frequency cut-off frequency and high-frequency cut-off frequency will not be with underlying dielectric plates（3）Dielectric constant
Change and change.
As described above, the interlayer plate of the encapsulation microstrip line construction of the new integrated gap waveguide of substrate（2）Instead of not
The air gap of stabilization, ensures upper and lower two layer medium plate（1、3）Between have a clearance height for stabilization.
As described above, the encapsulation microstrip line construction of the new integrated gap waveguide of substrate increases underlying dielectric plate（3）Thickness
The high-frequency cut-off frequency of microstrip line can be reduced；When underlying dielectric plate（3）Thickness it is smaller when, increase underlying dielectric plate（3）Thickness
Spend the low-frequency cut-off frequency by microstrip line is increased；When underlying dielectric plate（3）Thickness increase to a certain extent after, with bottom be situated between
Scutum（3）Thickness increase, the low-frequency cut-off frequency of microstrip line will no longer change.
As described above, the encapsulation microstrip line construction top layer dielectric-slab of the new integrated gap waveguide of substrate（1）, interlayer
Plate（2）With underlying dielectric plate（3）Bonded together by glue and realize encapsulation to conventional microstrip line, different from the envelope of traditional GW
PMC lids make to be screwed each layer in dress, and this contributes to the integrated of integrated circuit.
As described above, the encapsulation microstrip line construction of the new integrated gap waveguide of substrate works as top layer dielectric-slab（1）Thickness surpass
After crossing 0.6mm, the change of the dielectric constant in intermediate layer will not affect that the bandwidth of microstrip line.
As described above, the encapsulation microstrip line construction chamfering of the new integrated gap waveguide of substrate（10、11）Place is designed with 45 degree
Chamfering line（12、13）, suitable chamfering line length is selected by the discontinuity and resonance problems when effectively removal microstrip line bends.
As described above, the encapsulation microstrip line construction of the new integrated gap waveguide of substrate is to underlying dielectric plate（3）Loss angle
Tangent requirement is higher, need to as far as possible select the small dielectric-slab of loss angle tangent, but to top layer dielectric-slab（1）Loss angle tangent requirement
It is not high, the dielectric-slab of less expensive lossy may be selected, with reduces cost.
As described above, the new integrated gap waveguide transmission Quasi-TEM mode of substrate, is conducive to and the microstrip line of TEM mode
It is integrated, patten transformation loss when reducing integrated.
As described above, the encapsulation microstrip line construction dielectric-slab of the new integrated gap waveguide of substrate（1）With cycle via（4）With
And metal patch（5）Composition perfect magnetic conductor（Perfect magnetic conductor, PMC）Layer, effectively reduces space
Radiation loss, it is suppressed that plane wave, while solving the problems, such as air resonance.
Top layer dielectric-slab as described above（1）Dielectric constant is used for Rogers that 2.94, loss angle tangent is 0.0012
The dielectric materials of RT/Duroid 6002, size is 26.278mm*22.778*1.524mm；Interlayer plate（2）Using dielectric
Constant is the dielectric materials of Rogers RT/Duroid 6002 that 2.94, loss angle tangent is 0.0012, and size is 26.278mm*
22.778*0.762mm；Underlying dielectric plate（3）Dielectric constant is used for Rogers RT/ that 2.94, loss angle tangent is 0.0012
The dielectric materials of Duroid 6002, size is 26.278*23.778*0.762mm.
Simulation result and test result shown in Fig. 7 show, in millimeter wave frequency band 16.5GHz-24.5GHz, the present invention
The encapsulation microstrip line of the integrated gap waveguide of new substrate there is S11 less than -15dB, the partly impedance operator less than -20dB,
Transmission characteristics of the S21 less than -0.5dB, is the good integrated gap waveguide of substrate of a kind of small size, simple structure, transmission performance
Encapsulation microstrip line.
Better embodiment of the invention is explained in detail above, but the present invention is not limited to above-mentioned embodiment party
Formula, in the ken that one skilled in the relevant art possesses, can also be on the premise of present inventive concept not be departed from
Various changes can be made.
Claims (11)
1. a kind of encapsulation microstrip line construction of the integrated gap waveguide of new substrate, it is characterised in that including top layer dielectric-slab（1）,
Interlayer plate（2）, underlying dielectric plate（3）, wherein：
A, top layer dielectric-slab（1）Upper surface be printed with metal level, in dielectric-slab（1）On be equipped with periodicity metallic vias（4）, it is situated between
Scutum（1）Lower surface application have periodicity metal circular paster（5）, periodicity metallic vias and periodicity metal circular paster
（5）Mushroom-shaped electro-magnetic bandgap is constituted together（EBG）Structure；
B, interlayer plate（2）That is clearance layer, positioned at top layer dielectric-slab（1）With underlying dielectric plate（3）Centre position；
C, underlying dielectric plate（3）Upper surface is printed with zigzag microstrip line（6）, lower surface is printed with metal level；The zigzag
Microstrip line（6）It is to be formed after being bent through 90 degree twice by banding microstrip line；Zigzag microstrip line（6）Vertical component microstrip line
（7）Along Y direction, symmetrical on X-axis, X-axis overlaps with the broken line up and down of dielectric-slab；Zigzag microstrip line（6）Horizontal part
Divide microstrip line（8、9）With different length, parallel to X-axis；In zigzag microstrip line（6）Knee devise chamfering（10、
11）；In zigzag microstrip line（6）The transition line for being respectively arranged at two ends with matching feature（14）And transition line（15）；
D, a kind of new integrated gap waveguide of substrate encapsulation microstrip line construction three layers of dielectric-slab dielectric constant it is identical,
Three layers of dielectric-slab are adhesively-bonded together to form the encapsulation microstrip line construction of the integrated gap waveguide of new substrate of the invention；The top layer
Dielectric-slab（1）With interlayer plate（2）Length and width is identical；Underlying dielectric plate（3）Width is wide with upper two layers dielectric-slab
Degree is identical, but length is slightly longer, makes gradual change microstrip line（14、15）In naked state.
2. the encapsulation microstrip line construction of the integrated gap waveguide of a kind of new substrate according to claims 1, its feature exists
In：Described top layer dielectric-slab（1）Thickness than interlayer plate（2）With underlying dielectric plate（3）Thickness will thickness.
3. the encapsulation microstrip line construction of the integrated gap waveguide of a kind of new substrate according to claims 1, its feature exists
In：Adjustment top layer dielectric-slab（1）With underlying dielectric plate（3）Dielectric constant change the bandwidth of operation of the encapsulation microstrip line；Increase
Top layer dielectric-slab（1）Dielectric constant, will reduce microstrip line high-frequency cut-off frequency；Increase underlying dielectric plate（3）Dielectric it is normal
Number, will simultaneously reduce the high-frequency cut-off frequency and low-frequency cut-off frequency of microstrip line.
4. the encapsulation microstrip line construction of the integrated gap waveguide of a kind of new substrate according to claims 1, its feature exists
In：Described interlayer plate（2）Instead of unstable the air gap, upper and lower two layer medium plate is ensured（1、3）Between have one
The clearance height of individual stabilization.
5. the encapsulation microstrip line construction of the integrated gap waveguide of a kind of new substrate according to claims 1, its feature exists
In：Described top layer dielectric-slab（1）Dielectric constant reach after 10, low-frequency cut-off frequency and high-frequency cut-off frequency will not be with
Underlying dielectric plate（3）Dielectric constant change and change.
6. the encapsulation microstrip line construction of the integrated gap waveguide of a kind of new substrate according to claims 1, its feature exists
In：Described underlying dielectric plate（3）, increasing its thickness can reduce the high-frequency cut-off frequency of microstrip line；When underlying dielectric plate（3）'s
When thickness is smaller, increase underlying dielectric plate（3）Thickness will increase microstrip line low-frequency cut-off frequency；When underlying dielectric plate（3）
Thickness increase to a certain extent after, with underlying dielectric plate（3）Thickness increase, the low-frequency cut-off frequency of microstrip line will no longer
Change.
7. the encapsulation microstrip line construction of the integrated gap waveguide of a kind of new substrate according to claims 1, its feature exists
In：Described top layer dielectric-slab（1）, after its thickness is more than 0.6mm, the change of the dielectric constant in intermediate layer will not affect that micro-
Bandwidth with line.
8. the encapsulation microstrip line construction of the integrated gap waveguide of a kind of new substrate according to claims 1, its feature exists
In：Described chamfering（10、11）Place is designed with 45 degree of chamfering lines（12、13）, select suitable chamfering line length effectively to remove
Discontinuity and resonance problems when microstrip line bends.
9. the encapsulation microstrip line construction of the integrated gap waveguide of a kind of new substrate according to claims 1, its feature exists
In：Described underlying dielectric plate（3）Loss angle tangent requirement it is higher, need to the selection small dielectric-slab of loss angle tangent as far as possible, but
To top layer dielectric-slab（1）Loss angle tangent it is less demanding, the dielectric-slab of less expensive lossy may be selected, with reduces cost.
10. the encapsulation microstrip line construction of the integrated gap waveguide of a kind of new substrate according to claims 1, its feature exists
In：Described dielectric-slab（1）With cycle via（4）And metal patch（5）Composition perfect magnetic conductor（perfect magnetic
Conductor, PMC）Layer.
The encapsulation microstrip line construction of the 11. integrated gap waveguide of a kind of new substrate according to claims 1, its feature exists
In：Described top layer dielectric-slab（1）Dielectric constant is used for Rogers RT/Duroid that 2.94, loss angle tangent is 0.0012
6002 dielectric materials, size is 26.278mm*22.778*1.524mm；Interlayer plate（2）Use dielectric constant for 2.94,
Loss angle tangent is 0.0012 dielectric materials of Rogers RT/Duroid 6002, and size is 26.278mm*22.778*
0.762mm；Underlying dielectric plate（3）Dielectric constant is used for Rogers RT/Duroid that 2.94, loss angle tangent is 0.0012
6002 dielectric materials, size is 26.278*23.778*0.762mm.
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| CN106937521A (en) * | 2017-02-15 | 2017-07-07 | 浙江大学 | A kind of electromagnetic radiation theoretical based on gap waveguide suppresses structure and its application |
| CN108923104A (en) * | 2018-06-21 | 2018-11-30 | 云南大学 | Highly selective substrate integrates gap waveguide bandpass filter |
| CN109473761A (en) * | 2018-11-29 | 2019-03-15 | 云南大学 | The substrate of encapsulation integrates gap waveguide power splitter |
| CN110364799A (en) * | 2019-07-15 | 2019-10-22 | 云南大学 | Double ridge integral substrate gap waveguides |
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| CN114094295A (en) * | 2021-11-11 | 2022-02-25 | 中国电子科技集团公司第三十八研究所 | Magnetic wall waveguide based on artificial magnetic conductor structure |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106937521A (en) * | 2017-02-15 | 2017-07-07 | 浙江大学 | A kind of electromagnetic radiation theoretical based on gap waveguide suppresses structure and its application |
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| CN109473761A (en) * | 2018-11-29 | 2019-03-15 | 云南大学 | The substrate of encapsulation integrates gap waveguide power splitter |
| CN110364799A (en) * | 2019-07-15 | 2019-10-22 | 云南大学 | Double ridge integral substrate gap waveguides |
| CN110459850A (en) * | 2019-08-26 | 2019-11-15 | 苏州浪潮智能科技有限公司 | A kind of additional structure and imitative strip line of microwire band |
| CN113178669A (en) * | 2021-05-13 | 2021-07-27 | 云南大学 | 5G millimeter wave band-pass filter based on integrated substrate gap waveguide |
| CN114094295A (en) * | 2021-11-11 | 2022-02-25 | 中国电子科技集团公司第三十八研究所 | Magnetic wall waveguide based on artificial magnetic conductor structure |
| CN114094295B (en) * | 2021-11-11 | 2023-04-18 | 中国电子科技集团公司第三十八研究所 | Magnetic wall waveguide based on artificial magnetic conductor structure |
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