CN106848028A - A kind of polarized luminescence diode with composite construction - Google Patents
A kind of polarized luminescence diode with composite construction Download PDFInfo
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- CN106848028A CN106848028A CN201710042018.1A CN201710042018A CN106848028A CN 106848028 A CN106848028 A CN 106848028A CN 201710042018 A CN201710042018 A CN 201710042018A CN 106848028 A CN106848028 A CN 106848028A
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- 238000004020 luminiscence type Methods 0.000 title claims abstract description 24
- 239000002131 composite material Substances 0.000 title claims abstract description 21
- 238000010276 construction Methods 0.000 title claims abstract description 21
- 239000004038 photonic crystal Substances 0.000 claims abstract description 25
- 230000000737 periodic effect Effects 0.000 claims abstract description 23
- 239000013078 crystal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000002082 metal nanoparticle Substances 0.000 claims description 9
- 238000009826 distribution Methods 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000011807 nanoball Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims 5
- 241000196324 Embryophyta Species 0.000 claims 1
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 239000013528 metallic particle Substances 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 239000002923 metal particle Substances 0.000 abstract description 18
- 230000000694 effects Effects 0.000 abstract description 14
- 230000010287 polarization Effects 0.000 abstract description 8
- 230000008901 benefit Effects 0.000 abstract description 4
- 238000002310 reflectometry Methods 0.000 description 13
- 230000008859 change Effects 0.000 description 9
- 229910002601 GaN Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000013456 study Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to a kind of polarized luminescence diode with composite construction, the polarized luminescence diode can be with the light-emitting diode chip for backlight unit of normal luminous, periodic structure antireflection layer and nano-metal particle layer of photonic crystals with complete structure including what is set gradually from bottom to top.The advantage of the invention is that：Polarized luminescence diode of the present invention with composite construction, the polarization structure of the photonic crystal being made up of nano-metal particle can obtain polarized light；Meanwhile, the use of nano-metal particle can make full use of plasmon effect, such that it is able to effectively strengthen the internal quantum efficiency of LED；Additionally, periodic structure antireflection layer can improve the angle of emergence of light, by the original beam projecting that full transmitting occurs, luminous efficiency is greatly improved.
Description
Technical field
The invention belongs to semiconductor photoelectronic device manufacture field, it is related to a kind of light emitting diode, more particularly to a kind of tool
There is the polarized luminescence diode of composite construction.
Background technology
Light emitting diode（LED）It is a kind of semiconductor light that ought be in the forward direction electrically biased and be lighted in the mode of being excited
Source device.According to the difference of material, LED can send near ultraviolet, visible ray and near infrared light.
Third generation semiconductor with gallium nitride as representative, can be made efficient LED, and the band gap of gallium nitride and its alloy is covered
The spectral region from infrared to ultraviolet is covered.It has direct band gap wide, strong atom key, thermal conductivity high, chemically stable
Property property and the strong capability of resistance to radiation such as good, have in photoelectron, high temperature high power device and high-frequency microwave device application aspect
Wide prospect.Two main flow directions of current LED development, one is the luminous efficiency for improving LED, and it is special to be to confer to LED
Optical property, from for the special optical performance of LED, for example, assigns the characteristic of LED polarized lights, with very important reality
Meaning.If LED chip inherently polarized light-emitting, the saving in many equipment, volume, cost will be brought.Based on inclined
Vibration shape LED structure is compact, small volume, the advantages of reaction speed is fast, light loss is low, energy conversion efficiency is high, almost all of biography
The polarized light source of system can be replaced using polarization-type LED, for example the laser head of the lighting source of 3D projectors, Magneto-optical storages
Deng.So, study, design, manufacturing polarization-type LED to deepening theoretical research, expanded application scope, the raising application quality of LED
With important value.
Through retrieval, the A of patent CN 103746057 disclose a kind of linear polarization light-emitting diode, as shown in figure 1, bag
Include substrate 1,, n-layer 2,, SQW 3,With p-type layer 4,, in p-type layer 4,Upper surface be provided with medium transition zone 5,, the medium mistake
Cross layer 5,It is provided with nanometer bilayer metal grating 6,, the medium transition zone 5,On thickness in 50~300nm；The present invention is directed to
Gallium nitride based LED lights in blue, green Region, is adjusted and optimizes dependency structure parameter, it is possible to achieve excellent optical polarization
Characteristic and preferable transmitance.But the linear polarization light-emitting diode of the structure still suffers from certain defect：1. by reasonable
Design, nanometer bilayer metal grating can realize thering is strong reflection to the polarised light parallel to wiregrating, corresponding vertical direction
Polarised light has strong transmission, but the structure design it cannot be guaranteed that the internal quantum efficiency of light emitting diode；2. the structure is by excellent
Change the thickness of medium transition region thickness, dielectric grating cycle, dutycycle, thickness and double-layer grating, realize that the high-polarization of LED goes out
Light, but the light whole outgoing that full transmitting occurred originally, and then luminous efficiency can not be made to need to be improved, degree of polarization also needs to be carried
It is high.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of tool that can improve luminous efficiency and enhancing internal quantum efficiency
There is the polarized luminescence diode of composite construction.
In order to solve the above technical problems, the technical scheme is that：A kind of pole of polarized luminescence two with composite construction
Manage, its innovative point is：The polarized luminescence diode can be normal with complete structure including what is set gradually from bottom to top
Luminous light-emitting diode chip for backlight unit, periodic structure antireflection layer and nano-metal particle layer of photonic crystals.
Further, the figure of the periodic structure antireflection layer is the semiellipsoid with periodic structure, circular cone, four ribs
One kind in cone, triangular pyramid, truncated rectangular pyramids or round platform, preferably semiellipsoid and circular cone, the horizontal cycle of figure is 0.1 μm~20
μm, basal diameter and the height ratio of figure are 0.1~10.
Further, the layer of photonic crystals of the nano-metal particle, photonic crystal can be 1-D photon crystal, two dimension
Photonic crystal or three-D photon crystal.
Further, the layer of photonic crystals of the nano-metal particle, the lattice structure of three-D photon crystal can be three
One kind in dimension face-centered cubic lattice, three-dimensional cubic lattice or three-dimensional hexagonal lattice.
Further, the layer of photonic crystals of the nano-metal particle, metal nanoparticle is periodic distribution or non-week
The metal nano ball of phase property distribution.
Further, the layer of photonic crystals of the nano-metal particle, a diameter of 1-800nm of metal nanoparticle.
Further, the layer of photonic crystals of the nano-metal particle, the material of metal nanoparticle is Al, Ag, Au,
Cu, Ni, Cr or their alloy.
The advantage of the invention is that：Polarized luminescence diode of the present invention with composite construction, by nano-metal particle
The polarization structure of the photonic crystal of composition, can obtain polarized light；Meanwhile, the use of nano-metal particle can make full use of
Plasmon effect, such that it is able to effectively strengthen the internal quantum efficiency of LED；Additionally, periodic structure antireflection layer can be carried
The angle of emergence of high light line, by the original beam projecting that full transmitting occurs, greatly improves luminous efficiency.
Brief description of the drawings
The present invention is further detailed explanation with reference to the accompanying drawings and detailed description.
Fig. 1 is the structural representation of the A center line polarized light-emitting diodes of CN 103746057.
Fig. 2 is the structural representation of polarized luminescence diode of the present invention with composite construction.
Fig. 3 and Fig. 4 are the structural representations of periodic structure antireflection layer in the polarized luminescence diode with composite construction.
Fig. 5, Fig. 6 and Fig. 7 are the layer of photonic crystals of nano-metal particle in the polarized luminescence diode with composite construction
Structural representation.
Fig. 8 and Fig. 9 are light vertical incidence one side semiellipsoids（Without backside reflection）, the pass that reflectivity changes with depth-width ratio
System's figure.
Figure 10 is light vertical incidence one side semiellipsoid（Consider backside reflection-ingress of air）, reflectivity is with depth-width ratio
The graph of a relation of change.
Figure 11 is the two-sided semiellipsoid of light vertical incidence（Consider backside reflection-ingress of air）, reflectivity is with depth-width ratio
The graph of a relation of change.
Figure 12 and Figure 13 are light vertical incidence one side circular cones（Without backside reflection）, the relation that reflectivity changes with depth-width ratio
Figure.
Figure 14 is light vertical incidence one side circular cone（Consider backside reflection-ingress of air）, reflectivity is with depth-width ratio change
Graph of a relation.
Figure 15 is the two-sided circular cone of light vertical incidence（Consider backside reflection-ingress of air）, reflectivity is with depth-width ratio change
Graph of a relation.
Specific embodiment
The following examples can make professional and technical personnel that the present invention is more fully understood, but therefore not send out this
It is bright to be limited among described scope of embodiments.
Embodiment
The present embodiment has the polarized luminescence diode of composite construction, as shown in Fig. 2 the polarized luminescence diode is included certainly
It is lower and on set gradually with complete structure can with the light-emitting diode chip for backlight unit 1 of normal luminous, periodic structure antireflection layer 2 with
And nano-metal particle layer of photonic crystals 3.
Used as embodiment, more specifically implementation method is the figure of periodic structure antireflection layer 2, as shown in figure 3, being have
Periodic semiellipsoid；Or as shown in figure 4, be with periodic circular cone；The horizontal cycle of these figures be 0.1 μm~
20 μm, basal diameter and the height ratio of figure are 0.1~10；Periodic structure antireflection layer 2 can improve the angle of emergence of light, will
Originally there is the beam projecting of full transmitting, greatly improve luminous efficiency.
The layer of photonic crystals 3 of nano-metal particle, the polarization structure of the photonic crystal being made up of nano-metal particle, can
Obtain polarized light；Meanwhile, the use of nano-metal particle can make full use of plasmon effect, such that it is able to have
The internal quantum efficiency of effect ground enhancing LED.
Photonic crystal can be as shown in figure 5,1-D photon crystal；Or as shown in fig. 6,2 D photon crystal；Or such as Fig. 7
It is shown, three-D photon crystal；And the lattice structure of three-D photon crystal can be three-dimensional face-centered cubic lattice, three-dimensional cubic lattice
Or the one kind in three-dimensional hexagonal lattice；The layer of photonic crystals of nano-metal particle, metal nanoparticle is periodic distribution or non-
The metal nano ball of periodic distribution；And a diameter of 1-800nm of metal nanoparticle；The photonic crystal of nano-metal particle
Layer, the material of metal nanoparticle is Al, Ag, Au, Cu, Ni, Cr or their alloy.
In order to the depth-width ratio of the figure of compares cycle structure antireflection layer is different to polarization of the present invention with composite construction
The influence of light emitting diode, light is impinged perpendicularly in the periodic structure of different aspect ratios, and its result is shown in Fig. 8, Fig. 9, figure
10th, Figure 11, Figure 12, Figure 13, Figure 14 and Figure 15.
Fig. 8 and Fig. 9 is light vertical incidence one side semiellipsoid（Without backside reflection）, the pass that reflectivity changes with depth-width ratio
System's figure；As shown in Figure 8, depth-width ratio 2:It is 1 that 1 structure anti-reflection effect is better than depth-width ratio:1 patterned structures；As shown in Figure 9,
Depth-width ratio 0.7:It is 1 that 1 structure anti-reflection effect is better than depth-width ratio:1 patterned structures；And combine knowable to Fig. 8 and Fig. 9, Gao Kuan
Than 0.7:It is 2 that 1 structure anti-reflection effect is better than depth-width ratio:1 patterned structures.
Figure 10 is light vertical incidence one side semiellipsoid（Consider backside reflection-ingress of air）, reflectivity is with depth-width ratio
The graph of a relation of change；As shown in Figure 10, depth-width ratio 1:1 structure, depth-width ratio 2:1 structure and depth-width ratio 0.7:1 structure subtracts
Minus effect is incremented by successively.
Figure 11 is the two-sided semiellipsoid of light vertical incidence（Consider backside reflection-ingress of air）, reflectivity is with depth-width ratio
The graph of a relation of change；As shown in Figure 11, depth-width ratio 1:1 structure, depth-width ratio 2:1 structure and depth-width ratio 0.7:1 structure subtracts
Minus effect is incremented by successively.
Figure 12 and Figure 13 is light vertical incidence one side circular cone（Without backside reflection）, the relation that reflectivity changes with depth-width ratio
Figure；As shown in Figure 12, depth-width ratio 1:It is 0.7 that 1 structure anti-reflection effect is better than depth-width ratio:1 patterned structures；Can by Figure 13
Know, depth-width ratio 2:It is 1 that 1 structure anti-reflection effect is better than depth-width ratio:1 patterned structures.
Figure 14 is light vertical incidence one side circular cone（Consider backside reflection-ingress of air）, reflectivity is with depth-width ratio change
Graph of a relation；As shown in Figure 14, depth-width ratio 1:1 structure, depth-width ratio 2:1 structure and depth-width ratio 0.7:1 structure anti-reflection effect
It is really incremented by successively.
Figure 15 is the two-sided circular cone of light vertical incidence（Consider backside reflection-ingress of air）, reflectivity is with depth-width ratio change
Graph of a relation；As shown in Figure 15, depth-width ratio 1:1 structure, depth-width ratio 2:1 structure and depth-width ratio 0.7:1 structure anti-reflection effect
It is really incremented by successively.
In sum, depth-width ratio 0.7:1 structure anti-reflection effect is preferable, it is generally preferable to depth-width ratio 0.7:1 structure.
For the different shadows to polarized luminescence diode of the present invention with composite construction of figure of compares cycle structure
Ring, light is impinged perpendicularly in the periodic structure of different graphic, its result see the table below.
| Structure | d/nm | H/nm | Optimum reflection rate |
| Sapphire one side | 7.713% | ||
| Sapphire is two-sided | 14.285% | ||
| Semiellipsoid A（Without backside reflection） | 500 | 1000 | 0.159% |
| Semiellipsoid B（Back side air contact） | 350 | 245 | 4.178% |
| Semiellipsoid C（Two sides air contact） | 245 | 245 | 1.448% |
| Circular cone A（Without backside reflection） | 500 | 1000 | 0.072% |
| Circular cone B（Back side air contact） | 350 | 245 | 3.654% |
| Circular cone C（Two sides air contact） | 245 | 245 | 2.104% |
As can be seen from the above table, when periodic structure figure basal diameter with it is highly consistent when, the optimum reflection of circular cone
Rate be more than semiellipsoid, when periodic structure figure basal diameter with it is highly inconsistent when, the optimum reflection rate of circular cone is less than
Semiellipsoid；And then to sum up compare, the reflectivity of circular cone is relatively low with respect to semielliptical spheroid, that is, have transmissivity higher, thus one
As select circular cone figure.
General principle of the invention and principal character and advantages of the present invention has been shown and described above.The skill of the industry
Art personnel it should be appreciated that the present invention is not limited to the above embodiments, the simply explanation described in above-described embodiment and specification
Principle of the invention, without departing from the spirit and scope of the present invention, various changes and modifications of the present invention are possible, these
Changes and improvements all fall within the protetion scope of the claimed invention.The claimed scope of the invention by appending claims and
Its equivalent thereof.
Claims (7)
1. a kind of polarized luminescence diode with composite construction, it is characterised in that：The polarized luminescence diode is included under
And on set gradually with the light-emitting diode chip for backlight unit of normal luminous, periodic structure antireflection layer and can be received with complete structure
Rice metallic particles layer of photonic crystals.
2. the polarized luminescence diode with composite construction according to claim 1, it is characterised in that：The periodicity knot
The figure of structure antireflection layer is in the semiellipsoid with periodic structure, circular cone, rectangular pyramid, triangular pyramid, truncated rectangular pyramids or round platform
Plant, preferably semiellipsoid and circular cone, the horizontal cycle of figure is 0.1 μm~20 μm, the basal diameter and height ratio of figure are
0.1~10.
3. the polarized luminescence diode with composite construction according to claim 1, it is characterised in that：The nano metal
The layer of photonic crystals of particle, photonic crystal can be 1-D photon crystal, 2 D photon crystal or three-D photon crystal.
4. the polarized luminescence diode with composite construction according to claim 3, it is characterised in that：The nano metal
The layer of photonic crystals of particle, the lattice structure of three-D photon crystal can be three-dimensional face-centered cubic lattice, three-dimensional cubic lattice or
One kind in three-dimensional hexagonal lattice.
5. the polarized luminescence diode with composite construction according to claim 1, it is characterised in that：The nano metal
The layer of photonic crystals of particle, metal nanoparticle is the metal nano ball of periodic distribution or non-periodic distribution.
6. the polarized luminescence diode with composite construction according to claim 1, it is characterised in that：The nano metal
The layer of photonic crystals of particle, a diameter of 1-800nm of metal nanoparticle.
7. the polarized luminescence diode with composite construction according to claim 1, it is characterised in that：The nano metal
The layer of photonic crystals of particle, the material of metal nanoparticle is Al, Ag, Au, Cu, Ni, Cr or their alloy.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710042018.1A CN106848028A (en) | 2017-01-20 | 2017-01-20 | A kind of polarized luminescence diode with composite construction |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710042018.1A CN106848028A (en) | 2017-01-20 | 2017-01-20 | A kind of polarized luminescence diode with composite construction |
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| Publication Number | Publication Date |
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| CN106848028A true CN106848028A (en) | 2017-06-13 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080204626A1 (en) * | 2007-02-28 | 2008-08-28 | Cho Jae-Hee | Light emitting diodes and display apparatuses using the same |
| CN102593305A (en) * | 2012-03-21 | 2012-07-18 | 电子科技大学 | Metal periodic subwavelength structure on surface of light-emitting diode (LED) and preparation method for metal periodic subwavelength structure |
| CN202749410U (en) * | 2012-07-27 | 2013-02-20 | 鹤山市银雨照明有限公司 | Light-emitting diode (LED) chip with high luminous efficiency |
-
2017
- 2017-01-20 CN CN201710042018.1A patent/CN106848028A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080204626A1 (en) * | 2007-02-28 | 2008-08-28 | Cho Jae-Hee | Light emitting diodes and display apparatuses using the same |
| CN102593305A (en) * | 2012-03-21 | 2012-07-18 | 电子科技大学 | Metal periodic subwavelength structure on surface of light-emitting diode (LED) and preparation method for metal periodic subwavelength structure |
| CN202749410U (en) * | 2012-07-27 | 2013-02-20 | 鹤山市银雨照明有限公司 | Light-emitting diode (LED) chip with high luminous efficiency |
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Application publication date: 20170613 |