CN106848014A - A kind of structure of semiconductor light-emitting-diode and preparation method thereof - Google Patents
A kind of structure of semiconductor light-emitting-diode and preparation method thereof Download PDFInfo
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- 239000002122 magnetic nanoparticle Substances 0.000 claims abstract description 11
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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Abstract
Light extraction effect, improving luminous efficiency can be lifted the invention discloses a kind of structure of semiconductor light-emitting-diode and preparation method thereof, its structure and using the semiconductor light-emitting-diode that the preparation method makes；A kind of structure of semiconductor light-emitting-diode disclosed by the invention has the first nanocone in the V-arrangement hole linkage interface of first, second active layer；The corresponding first nanocone center of each pair SQW interface location that each pair SQW interface location corresponding V-arrangement hole inclined-plane of the second active layer has magnetic nanoparticle, the second active layer has the first metal nanoparticle；V-arrangement is cheated and the first nanocone gap filling transparent separation layer, its electronic barrier layer of disposed thereon first, the first p-type semiconductor layer, the second p-type semiconductor layer；The height of the first nanocone is higher than the second p-type semiconductor layer, and the bottom and top for having the second nanocone, the second nanocone higher than the first nanocone inclined-plane of the second p-type semiconductor have the second metal nanoparticle.
Description
Technical field
The present invention relates to semiconductor photoelectric device field, more particularly to nitride semiconductor LED structure and system
Make method field.
Background technology
Now, light emitting diode（LED）, particularly nitride semiconductor LED because of its luminous efficiency higher,
Obtained in general lighting field and be widely applied.Because of the bottom existing defects of nitride semiconductor LED, cause life
Defect extends during SQW long can form V-arrangement hole（V-pits）.The potential barrier of the potential barrier more than MQW of the side wall in V-arrangement hole, leads
Send a telegraph son and be difficult transition into the defect non-radiative recombination center of V-pits, meanwhile, V-arrangement hole side wall can send to MQW
Light is reflected, change lighting angle, reduce the angle of total reflection on light extraction influence, lifted light extraction efficiency, improving luminous efficiency and
Luminous intensity.
Specifically, traditional nitride semiconductor LED, because lattice mismatch and thermal mismatching are in semiconductor growing mistake
Cheng Zhonghui forms defect, and the dislocation can extend to form V-arrangement hole during growth MQW（V-pits）, as shown in Figure 1；Because of V-arrangement hole
Side wall potential barrier more than MQW potential barrier, cause electronics be difficult transition into V-arrangement hole defect non-radiative recombination center,
Meanwhile, the light that V-arrangement hole side wall can send to MQW reflects, and can change lighting angle, reduces the angle of total reflection to light extraction
Influence, lifts light extraction efficiency, improving luminous efficiency and luminous intensity.
The V-arrangement hole opening upwards of traditional MQW, with the increase of SQW logarithm, the opening in its V-arrangement hole is bigger；
The opening in V-arrangement hole can not infinitely increase, and excessive opening can produce a large amount of non-radiative recombination centers, cause brightness to decline.
The content of the invention
The technical problems to be solved by the invention are for above-mentioned deficiency of the prior art, there is provided a kind of semiconductor hair
Structure of optical diode and preparation method thereof, its structure and the semiconductor light-emitting-diode using preparation method making can
Lifting light extraction effect, improving luminous efficiency.
In order to achieve the above object,
A kind of structure of semiconductor light-emitting-diode disclosed by the invention is achieved using following technical scheme：
A kind of structure of semiconductor light-emitting-diode, including substrate, cushion, n-type semiconductor layer, with x to MQW
First active layer, with y to the second active layer of MQW, the first active layer and the second active layer form V-arrangement hole, and described the
First, the V-arrangement hole linkage interface of the second active layer has the first nanocone（It should be noted that nanocone of the present invention
Can be nano-pillar, now, the inclined-plane of nanocone and the angle of horizontal plane are 90 degree）；V-arrangement hole inclined-plane, the first nanocone
Inclined-plane has one layer of conductive channel being connected with the electrics layer of the first p-type half；The each pair SQW interface position of second active layer
Putting corresponding V-arrangement hole inclined-plane has a magnetic nanoparticle, each pair SQW interface location of second active layer corresponding the
One nanocone center has the first metal nanoparticle；Described V-arrangement hole and the first nanocone gap filling transparent separation layer, and
The first electronic barrier layer for depositing above it, the first p-type semiconductor layer, the second p-type semiconductor layer；First nanocone
Highly it is higher than the second p-type semiconductor layer, there is the second metal nanoparticle higher than the first nanocone inclined-plane of the second p-type semiconductor
And the second connected nanocone, the bottom and top of described the second nanocone have the second metal nanoparticle.Using second
The metal nanoparticle and V-arrangement at the first nanocone center of active layer each pair SQW interface location cheat the magnetic Nano on inclined-plane
Grain, under electric current injection condition, the second active layer forms electromagnetism, magneto-optic and surface phasmon multiple resonance coupling effect, carries
The quantum luminous efficiency of active layer is risen, meanwhile, using the first nanocone top, the second nanocone and its second metal nanoparticle
Form surface coarsening effect and lift light extraction efficiency, first and second coupling effect phase with the coupling effect of surface phasmon second
Build and add, so as to lift the luminous efficiency of semiconductor light-emitting-diode.
As a kind of a kind of preferred embodiment of the structure of semiconductor light-emitting-diode of the invention：Described first is active
Layer has x to MQW, and the second active layer has y to MQW, x >=2, y >=2, preferably x=3, y=3.
As a kind of a kind of preferred embodiment of the structure of semiconductor light-emitting-diode of the invention：Described first,
Two nanocone materials are III-V group semi-conductor material or Group II-VI semiconductor material, the preferred GaN of the first nanocone.
As a kind of a kind of preferred embodiment of the structure of semiconductor light-emitting-diode of the invention：Described first,
First, second metal nanoparticle of two nanocones is the metal materials such as Ag, Al, Ni, Au, Cu, Ga or its any combination.
As a kind of a kind of preferred embodiment of the structure of semiconductor light-emitting-diode of the invention：The V-arrangement hole is oblique
The magnetic nanoparticle in face is Ni, Co, Mn, FeCo, Fe3O4、Cr2O3、Fe2The various tools such as CrSi magnetic simple substance and chemical combination
Thing.
As a kind of a kind of preferred embodiment of the structure of semiconductor light-emitting-diode of the invention：Described V-arrangement hole
It is SiO with the transparent isolation layer material that the first nanocone gap is filled2, transparent insulation oxide or the semiconductor such as SiNx.
As a kind of a kind of preferred embodiment of the structure of semiconductor light-emitting-diode of the invention：Described V-arrangement hole
Inclined-plane, the conductive channel on the first nanocone inclined-plane and the first p-type semiconductor layer are connected, and thickness is 1~100nm, optimizes 20nm,
Mg doping concentrations are 1E19~1E21cm-3, preferential 5E19 cm-3。
The invention also discloses a kind of preparation method of the structure of any above-mentioned semiconductor light-emitting-diode, its feature exists
In comprising the steps of：
（1）The epitaxial growth buffer successively on substrate, n-type semiconductor layer, with x to the first active layer of MQW, tool
There is second active layers of the y to MQW, the first active layer and the second active layer form V-arrangement hole；
（2）The nanocone of nanometer positioning techniques of deposition first is used in the V-arrangement hole linkage interface of first, second active layer
Growth catalyst, the nanocone of catalytic growth first；
（3）Respectively carried out once again in the corresponding first nanocone position of each pair SQW interface location of second active layer
Addition catalyst, makes catalyst total amount be in hypersaturated state at interface, and the solid-liquid that control growth temperature is in catalyst has a common boundary
Temperature, makes partial catalyst be in molten condition, is partially in solid-state, and solid catalyst is retained in the first nanocone and is centrally formed
First metal nanoparticle, the catalyst of molten condition up grows with the first nanocone；
（4）Make one layer of conduction being connected with the first p-type semiconductor layer and lead on described V-arrangement hole inclined-plane, the first nanocone inclined-plane
Road；
（5）Nanometer positioning deposition technique is used on each pair SQW interface location correspondence V-arrangement hole inclined-plane of second active layer
Deposited magnetic nano particle；
（6）In described V-arrangement hole and the first nanocone gap filling transparent separation layer, the first electronics for then depositing above it
Barrier layer, the first p-type semiconductor layer, the second p-type semiconductor layer；
（7）Using step（3）The height of the first nanocone of growth is higher than the second p-type semiconductor layer, is partly led higher than the second p-type
First nanocone inclined-plane of body uses the catalyst of the metal nanoparticle of nanometer positioning techniques of deposition second, at the catalyst
In hypersaturated state, partial catalyst is in molten condition, be partially in solid-state, solid catalyst is retained in the first nanocone
With the interface of the second nanocone, the nanocone of molten condition catalyst growth regulation two is simultaneously retained in the second nanocone top, shape
Into the second nanocone with double metal nano particle.
As a kind of preferred embodiment of the preparation method of the structure of semiconductor light-emitting-diode of the invention：It is described to receive
Rice pin deposition technology positions nano-precipitation using high accuracy SEM with the visualization that electron beam deposition is combined
Technology.
As a kind of preferred embodiment of the preparation method of the structure of semiconductor light-emitting-diode of the invention：Described
Before each pair SQW of the second active layer starts growth, a catalyst is added again, make the area of catalyst more than this layer
The area of the first nanocone, makes catalyst total amount be in hypersaturated state at interface, meanwhile, control growth temperature is between catalyst
The temperature of solid-liquid have a common boundary interval, partial catalyst is in molten condition, solid-state is partially in, so as to can be controlled in
Second active layer at the first nanocone center each MQW interface location the first metal nanoparticle of generation.
Present invention has the advantages that：
Structure of a kind of semiconductor light-emitting-diode disclosed by the invention and preparation method thereof is there is provided a kind of new semiconductor hair
Optical diode, it includes substrate, cushion, n-type semiconductor layer, with x to the first active layer of MQW, with y to many
The V-arrangement hole nanocone of interface manufacture first of the second active layer of SQW, the first active layer and the second active layer, the second active layer
Each pair SQW interface location corresponding V-arrangement hole inclined-plane there is magnetic nanoparticle, corresponding first nanocone center has
First metal nanoparticle；The height of first nanocone is higher than the second p-type semiconductor layer, the second nanocone bottom on its inclined-plane
Portion and top have the second metal nanoparticle.Second active layer forms electromagnetism, magneto-optic and surface phasmon multiple resonance coupling
Effect is closed, the first nanocone top, the second nanocone and its second metal nanoparticle form surface coarsening effect and surface etc.
From the coupling effect of excimer second, first and second coupling effect is mutually built and is added, and lifts the luminous efficiency of semiconductor light-emitting-diode.
Brief description of the drawings
Fig. 1 is traditional semiconductor light-emitting-diode schematic diagram that MQW is cheated with V-arrangement of the embodiment of the present invention.
Fig. 2 is the schematic diagram of the new semiconductor light-emitting-diode of the embodiment of the present invention.
Fig. 3 for the embodiment of the present invention new semiconductor light-emitting-diode preparation method the step of (1), (2), (3),
(4), the schematic diagram of (5).
The schematic diagram of the step of Fig. 4 is the preparation method of the new semiconductor light-emitting-diode of embodiments of the invention (6).
The schematic diagram of the step of Fig. 5 is the preparation method of the new semiconductor light-emitting-diode of embodiments of the invention (7).
Description of reference numerals：
100：Substrate, 101：Cushion, 102：N-type semiconductor layer, 103a：First active layer：103b：Second active layer, 104：V
Shape is cheated, and 105：First nanocone, 106：First metal nanoparticle, 107：Magnetic nanoparticle, 108：Transparent spacer layer, 109：
Conductive channel, 110：First electronic barrier layer, 111：First p-type semiconductor layer, 112：Second p-type semiconductor layer, 113：Second
Metal nanoparticle, 114：Second nanocone.
Specific embodiment
Below in conjunction with the accompanying drawings and embodiment describes the specific embodiment of the invention：
As shown in Figure 2-5, it illustrates specific embodiment of the invention, as illustrated, a kind of semiconductor disclosed by the invention
The active layer of structure fabrication first and the second active layer of light emitting diode, the interface in the V-arrangement hole formed in first, second active layer
The first nanocone is made, the corresponding first nanocone center of the second active layer each pair SQW interface location makes the first metal and receives
Rice grain, each pair SQW interface location corresponding V-arrangement hole inclined-plane of the second active layer makes magnetic nanoparticle, using second
The magnetic on the first metal nanoparticle and V-arrangement the hole inclined-plane at the first nanocone center of active layer each pair SQW interface location is received
Rice grain, as shown in Figure 2.Under electric current injection condition, the second active layer forms electromagnetism, magneto-optic, surface phasmon more than first
Weight resonance coupling effect, lifts the quantum luminous efficiency of active layer；Meanwhile, the first nanocone top, the second nanocone and its
Two metal nanoparticles form surface coarsening effect and the heavy coupling effect of surface phasmon second, lift light extraction effect；It is logical
Cross first and second coupling effect and mutually build and add, further the luminous efficiency of lifting semiconductor light-emitting-diode.
As a kind of specific embodiment of the preparation method of the structure of semiconductor light-emitting-diode disclosed by the invention, its bag
Containing following steps：
Step 1）：As shown in figure 3, in MOCVD metal organic chemical vapor deposition equipment, extension life successively on the substrate 100
Cushion long 101, n-type semiconductor layer 102, with x=3 to the first active layer 103a of MQW, with y=3 to Multiple-quantum
Second active layer 103b of trap, the first active layer and the second active layer form V-arrangement hole 104, and semi-conducting material is III-V material
GaN；
Step 2）：Received using nanometer positioning techniques of deposition first in the V-arrangement hole linkage interface of first, second active layer
The catalyst of the growth Ga self-catalysis of rice cone, the visualization being combined with electron beam deposition using high accuracy SEM
Positioning nano-precipitation technology, starts the first nanocone of catalytic growth 105, and the first nanocone materials are III-V material GaN.
Step 3）：It is each in the corresponding position of first nanocone 105 of each pair SQW interface location of second active layer
The catalyst of Ga self-catalysis is once added again, catalyst total amount is in hypersaturated state, control growth temperature at interface
Solid-liquid boundary temperature of the degree in catalyst, makes partial catalyst be in molten condition, is partially in solid-state, and solid catalyst is protected
Stay in the first nanocone and be centrally formed the first metal Ga nano particles 106, the catalyst of molten condition with the first nanocone up
Growth；
Step 4）：One layer is made with leading that the first p-type semiconductor layer is connected on described V-arrangement hole inclined-plane, the first nanocone inclined-plane
Electric channel 109, thickness is 20nm, and Mg doping concentrations are 5E19 cm-3；
Step 5）：Deposited using nanometer positioning on each pair SQW interface location correspondence V-arrangement hole inclined-plane of second active layer
Technology deposited magnetic nano particle 107；
Step 6）：As shown in figure 4, in described V-arrangement hole and the first nanocone gap filling transparent separation layer 108, material is
SiO2, the first electronic barrier layer 110 for then depositing above it, the first p-type semiconductor layer 111, the second p-type semiconductor layer
112；
Step 7）：As shown in figure 5, the height of the first nanocone 105 grown using step 3 is higher than the second p-type semiconductor layer
112, use nanometer positioning techniques of deposition Ag metal nanoparticles on the first nanocone inclined-plane higher than the second p-type semiconductor
Catalyst, make catalyst total amount interface be in hypersaturated state, control growth temperature between the solid-liquid of catalyst
Temperature boundary is interval, partial catalyst is in molten condition, is partially in solid-state, and solid catalyst is retained in the first nanocone
With the interface of the second nanocone, the nanocone of molten condition catalyst growth regulation two is simultaneously retained in the second nanocone top, shape
Into the second nanocone 114 with double metal Ag nano particles 113.
Under electric current injection condition, the second active layer forms electromagnetism, magneto-optic, the coupling of the multiple resonance of surface phasmon first
Effect, lifts the quantum luminous efficiency of active layer；Meanwhile, the first nanocone top, the second nanocone and its second metal nano
Particle forms surface coarsening effect and the coupling effect of surface phasmon second, lifts light extraction effect；By first and second
Coupling effect is mutually built and is added, further the luminous efficiency of lifting nitride semiconductor LED.
The preferred embodiment for the present invention is explained in detail above in conjunction with accompanying drawing, but the invention is not restricted to above-mentioned implementation
Mode, in the ken that those of ordinary skill in the art possess, can also be on the premise of present inventive concept not be departed from
Make a variety of changes, these changes are related to correlation technique well-known to those skilled in the art, and these both fall within patent of the present invention
Protection domain.
Not departing from the spirit and scope of the present invention can make many other changes and remodeling.It should be appreciated that the present invention is not
It is limited to specific implementation method, the scope of the present invention is defined by the following claims.
Claims (10)
1. a kind of structure of semiconductor light-emitting-diode, including substrate, cushion, n-type semiconductor layer, with MQW
The V-arrangement hole of one active layer, the second active layer and its formation, and the V-arrangement of the first active layer, the second active layer cheats the first of interface
Nanocone；V-arrangement hole inclined-plane, the inclined-plane of the first nanocone have one layer of conductive channel being connected with the electrics layer of the first p-type half；It is described
The each pair SQW interface location of the second active layer corresponding V-arrangement hole inclined-plane has a magnetic nanoparticle, the second active layer it is every
The first nanocone center corresponding to SQW interface location has the first metal nanoparticle；Received with first in described V-arrangement hole
Rice cone gap filling transparent separation layer, the electronic barrier layer of transparent spacer layer disposed thereon first, the first p-type semiconductor layer and second
P-type semiconductor layer；The height of first nanocone is higher than the second p-type semiconductor layer, and higher than the second p-type semiconductor first receives
The bottom and top that rice cone inclined-plane has the second metal nanoparticle and the second connected nanocone, the second nanocone have second
Metal nanoparticle.
2. the structure of a kind of semiconductor light-emitting-diode according to claim 1, it is characterised in that：First active layer
With x to MQW, the second active layer has y to MQW, x >=2, y >=2.
3. the structure of a kind of semiconductor light-emitting-diode according to claim 1, it is characterised in that：Described first nanometer
Cone, the material of the second nanocone are III-V group semi-conductor material or Group II-VI semiconductor material.
4. the structure of a kind of semiconductor light-emitting-diode according to claim 1, it is characterised in that：In first nanocone
The heart, the first metal nanoparticle of the second nanocone, the second metal nanoparticle are the one kind or many in Ag, Al, Ni, Au, Cu
Kind.
5. the structure of a kind of semiconductor light-emitting-diode according to claim 1, it is characterised in that：The V-arrangement cheats inclined-plane
Magnetic nanoparticle be the magnetic simple substance of tool and/or compound；The magnetic simple substance of tool and/or compound are included
Ni、Co、Mn、FeCo、Fe3O4、Cr2O3、Fe2CrSi。
6. the structure of a kind of semiconductor light-emitting-diode according to claim 1, it is characterised in that：Described V-arrangement hole with
The transparent isolation layer material of the first nanocone gap filling is transparent insulation oxide or semiconductor；The transparent insulation oxide
Or semiconductor includes SiO2、SiNx。
7. the structure of a kind of semiconductor light-emitting-diode according to claim 1, it is characterised in that：V-arrangement hole inclined-plane, the
The conductive channel on one nanocone inclined-plane and the first p-type electric-conducting layer be connected, thickness be 1~100nm, Mg doping concentrations be 1E19~
1E21cm-3。
8. a kind of preparation method of the structure of the semiconductor light-emitting-diode as described in claim 1~7 is any, its feature exists
In comprising the steps of：
（1）The epitaxial growth buffer successively on substrate, n-type semiconductor layer, with x to the first active layer of MQW, tool
There is second active layers of the y to MQW, the first active layer and the second active layer form V-arrangement hole；
（2）Nanometer positioning techniques of deposition first is used in the V-arrangement hole linkage interface of first active layer, the second active layer
The growth catalyst of nanocone, the nanocone of catalytic growth first；
（3）Respectively carried out once again in the corresponding first nanocone position of each pair SQW interface location of second active layer
Addition catalyst, makes catalyst total amount be in hypersaturated state at interface, and the solid-liquid that control growth temperature is in catalyst has a common boundary
Temperature, makes partial catalyst be in molten condition, is partially in solid-state, and solid catalyst is retained in the first nanocone and is centrally formed
First metal nanoparticle, the catalyst of molten condition up grows with the first nanocone；
（4）Inclined-plane, the first nanocone inclined-plane are cheated in V-arrangement make one layer of conductive channel being connected with the first p-type semiconductor layer；
（5）Nanometer positioning deposition technique is used on each pair SQW interface location correspondence V-arrangement hole inclined-plane of second active layer
Deposited magnetic nano particle；
（6）In described V-arrangement hole and the first nanocone gap filling transparent separation layer, the first electronics for then depositing above it
Barrier layer, the first p-type semiconductor layer, the second p-type semiconductor layer；
（7）Using step（3）The height of the first nanocone of growth is higher than the second p-type semiconductor layer, is partly led higher than the second p-type
First nanocone inclined-plane of body uses the catalyst of the metal nanoparticle of nanometer positioning techniques of deposition second, at the catalyst
In hypersaturated state, partial catalyst is in molten condition, be partially in solid-state, solid catalyst is retained in the first nanocone
With the interface of the second nanocone, the nanocone of molten condition catalyst growth regulation two is simultaneously retained in nanocone top, forms tool
There is the second nanocone of double metal nano particle.
9. the preparation method of a kind of semiconductor light-emitting-diode according to claim 8, it is characterised in that：The nanometer is determined
Position deposition technique positions nano-precipitation technology using high accuracy SEM with the visualization that electron beam deposition is combined.
10. the preparation method of a kind of semiconductor light-emitting-diode according to claim 8, it is characterised in that：Described
Before each pair SQW of two active layers starts growth, a catalyst is added again, make area the receiving more than this layer of catalyst
The area of rice cone, makes catalyst total amount be in hypersaturated state at interface, meanwhile, control growth temperature consolidating between catalyst
The temperature boundary of state-liquid is interval, partial catalyst is in molten condition, solid-state is partially in, so as to can be controlled in first
Second active layer at nanocone center each MQW interface location the first metal nanoparticle of generation.
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