CN110034213A - A kind of high-performance GaN base light emitting structure and preparation method thereof - Google Patents
A kind of high-performance GaN base light emitting structure and preparation method thereof Download PDFInfo
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- CN110034213A CN110034213A CN201910235667.2A CN201910235667A CN110034213A CN 110034213 A CN110034213 A CN 110034213A CN 201910235667 A CN201910235667 A CN 201910235667A CN 110034213 A CN110034213 A CN 110034213A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 230000012010 growth Effects 0.000 claims abstract description 96
- 230000004888 barrier function Effects 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 31
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims abstract description 28
- 230000008569 process Effects 0.000 claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 72
- 229910052757 nitrogen Inorganic materials 0.000 claims description 36
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 33
- 239000012159 carrier gas Substances 0.000 claims description 33
- 229910052733 gallium Inorganic materials 0.000 claims description 33
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 18
- 229910052749 magnesium Inorganic materials 0.000 claims description 18
- 239000011777 magnesium Substances 0.000 claims description 18
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 7
- 230000001351 cycling effect Effects 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 230000009467 reduction Effects 0.000 description 4
- 241000209202 Bromus secalinus Species 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000034373 developmental growth involved in morphogenesis Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000005701 quantum confined stark effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
A kind of high-performance GaN base light emitting structure of the present invention and preparation method thereof, belongs to technical field of semiconductor；A kind of GaN base light emitting structure is provided, quantum well region is increased to the constraint ability of carrier, reduces the leakage of carrier, improve the internal quantum efficiency of GaN base light emitting；A kind of high-performance GaN base light emitting structure, including successively grow on substrate GaN nucleating layer, u-GaN layers, the GaN layer of n-type doping, the miniature hole layer of nanometer, InGaN/GaN quantum well layer, p-type doping AlGaN electronic barrier layer, p-type doping GaN layer and contact electrode layer, the miniature hole layer of nanometer includes the miniature hole forming layer of alternately stacked nanometer from bottom to top and the miniature hole layer process layer of nanometer, trimethyl gallium, which mixes growth on silicon layer, multiple nano islands, and the miniature hole layer process layer of nanometer is used to carry out smooth treatment to the surface of nano island.
Description
Technical field
A kind of high-performance GaN base light emitting structure of the present invention and preparation method thereof belongs to semiconductor material technology neck
Domain.
Background technique
There is very strong piezoelectric field that can generate very big piezoelectric polarization effect in GaN base light emitting Quantum Well.Influence GaN
The key factor of base LED internal quantum efficiency mainly has constraint ability, piezoelectric polarization effect and trap/base interface matter of Quantum Well
Amount.Firstly, since the strong polarized electric field generated in InGaN Quantum Well there are polarity effect leads to band curvature in multiple quantum wells,
Conduction band is lower in p-type side, and N-type side is elevated, so that the band edge of multiple quantum wells changes into triangle, the base of conduction band by rectangular
Band energy reduces, and the base band energy of valence band increases, and so that gap width between the two is narrowed, leads to emission wavelength red shift, in electricity
Under the conditions of stream injection, luminescent device shows strong quantum confined stark effect.Meanwhile energy band inclination leads to the beam of Quantum Well
The ability of tiing up dies down, so that carrier be made to be easy to cross potential barrier, Carrier Leakage occurs, greatly reduces the luminous efficiency of device.
Therefore, the constraint ability for improving quantum well region carrier is to improve one of the principal element of LED luminous efficiency.Secondly, Quantum Well
Area's trap/base interface quality has important influence to the internal quantum efficiency of carrier.Therefore, in order to obtain high luminescence can
Light emitting diode, it is non-around the research for carrying out the constraint ability and interface quality at improvement trap base for improving quantum well region to carrier
It is often important.
The piezoelectric polarization effect that currently used method has barrier layer to mix first usually sub- trap of reduction amount such as silicon, aluminium either indium,
These methods can also improve the polarity effect of Quantum Well to a certain extent, improve the internal quantum efficiency of light emitting diode, still
These methods are smaller to Quantum Well constraint ability improvement, and quantum well region still suffers from a large amount of Carrier Leakage.
Summary of the invention
A kind of high-performance GaN base light emitting structure of the present invention and preparation method thereof, overcomes of the existing technology
Deficiency provides a kind of GaN base light emitting structure, increases quantum well region to the constraint ability of carrier, reduces load
The leakage for flowing son, improves the internal quantum efficiency of GaN base light emitting.
In order to solve the above-mentioned technical problem, a kind of the technical solution adopted by the present invention are as follows: high-performance GaN base light emitting
Structure, including successively grow on substrate GaN nucleating layer, u-GaN layers, the miniature hole layer of the GaN layer of n-type doping, nanometer,
InGaN/GaN quantum well layer, the AlGaN electronic barrier layer of p-type doping, the GaN layer of p-type doping and contact electrode layer, nanometer are micro-
It includes that the miniature hole forming layer of alternately stacked nanometer and the miniature hole layer process layer of nanometer, trimethyl gallium mix silicon from bottom to top that type, which cheats layer,
Growth has multiple nano islands on layer, and the miniature hole layer process layer of nanometer is used to carry out smooth treatment to the surface of nano island.
Further, the InGaN/GaN quantum well layer is by x InGaN potential well layer and GaN barrier layer alternating layer stacked group
At, wherein 5≤x≤15.
Further, the nano island is that surface is smooth, cone of uniform size, the bottom surface radius of cone is 50~
100 nm are highly 30~50 nm, and the spacing between two neighboring cylindrical body is 300~500 nm.
Further, the quantity of the miniature hole forming layer of the nanometer and the nanometer miniature hole layer process layer is identical, be 3~
10 layers, it is the GaN of the source Ga growth with TMGa that material used in the miniature hole forming layer of nanometer, which is Si doping, and the nanometer is micro-
Type cheats material used in layer process layer as Si doping, is the GaN of the source Ga growth with TEGa.
A kind of preparation method of high-performance GaN base light emitting structure, comprising the following steps:
S1. substrate is at a temperature of 1070 DEG C, H2300 s of reduction treatment in atmosphere；
S2. using trimethyl gallium as gallium source, NH3As nitrogen source, N2As carrier gas, growth temperature is 550 DEG C, the time 150
S, chamber pressure are 600 mbar, and annealing temperature is 1040 DEG C, and the time is 200 s, and growth thickness is 25 nm's on substrate
GaN nucleating layer；
S3. using trimethyl gallium as gallium source, NH3As nitrogen source, N2As carrier gas, growth temperature is 1060 DEG C, growth time
For 3600 s, chamber pressure is 600 mbar, the undoped u-GaN of high temperature that growth thickness is 2 μm on GaN nucleating layer
Layer；
S4. using trimethyl gallium as gallium source, SiH4As silicon source, NH3As nitrogen source, N2As carrier gas, growth temperature 1065
DEG C, growth time is 1800 s, and chamber pressure is 600 mbar, the N that growth thickness is 1 μm on undoped u-GaN layer
The GaN layer of type doping；
S5. using trimethyl gallium as gallium source, SiH4As silicon source, NH3As nitrogen source, N2As carrier gas, growth temperature 950
DEG C, growth time is 800 s, and chamber pressure is 600 mbar, and growth thickness is 50 nm's in the GaN layer of n-type doping
The miniature hole forming layer of GaN layer, i.e. nanometer；
S6. using triethyl-gallium as gallium source, SiH4As silicon source, NH3As nitrogen source, N2As carrier gas, growth temperature 950
DEG C, growth time 800s, chamber pressure is 600 mbar, and growth thickness is 50 nm's on the miniature hole forming layer of nanometer
The miniature hole layer process layer of GaN layer, i.e. nanometer；
S7. it is based on step S5 and S6, the miniature hole forming layer of cycling deposition nanometer and nanometer are micro- in the miniature hole layer process layer of nanometer
Type cheats 2~9 periods of layer process layer, forms the miniature hole layer of nanometer；
S8. use triethyl-gallium for gallium source, NH3For nitrogen source, N2For carrier gas, SiH4As doped source, growth temperature is 840 DEG C, raw
It is for a long time 1000 s, chamber pressure is 400 mbar, the Si that growth thickness is 12 nm in the miniature hole layer process layer of nanometer
The GaN barrier layer of doping；
S9. using triethyl-gallium as gallium source, TMln is indium source, NH3For nitrogen source, N2For carrier gas, it is 740 DEG C in temperature, reacts chamber pressure
Power is 400 mbar, and growth time is 300 s, the InGaN potential well layer with a thickness of 3nm grown on GaN barrier layer；
S10. use triethyl-gallium for gallium source, NH3For nitrogen source, N2For carrier gas, SiH4As doped source, growth temperature is 840 DEG C,
Growth time is 1000 s, and chamber pressure is 400 mbar, and the Si that growth thickness is 12 nm on InGaN potential well layer is adulterated
GaN barrier layer；
S11. it is based on step S9 and S10,4~14 periods of cycling deposition InGaN potential well layer and GaN barrier layer form InGaN/
GaN quantum well layer；
S12. use trimethyl gallium for gallium source, trimethyl aluminium is silicon source, and trimethyl indium is indium source, and two luxuriant magnesium are magnesium source, to GaN gesture
Barrier layer realizes p-type doping, NH3As nitrogen source, N2For carrier gas, growth temperature is 920 DEG C, and growth time is 300 s, reacts chamber pressure
Power is 200 mbar, forms the AlGaN electronic barrier layer adulterated with a thickness of the p-type of 50 nm；
S13. use trimethyl gallium for gallium source, two luxuriant magnesium are magnesium source, NH3As nitrogen source, N2For carrier gas, growth temperature 960
DEG C, growth time is 3000 s, and chamber pressure is 200 mbar, the growth thickness on the AlGaN electronic barrier layer of p-type doping
The GaN layer adulterated for the p-type of 250nm；
S14. use trimethyl gallium for gallium source, two luxuriant magnesium are magnesium source, NH3As nitrogen source, nitrogen is carrier gas, growth temperature 960
DEG C, growth time 300s, chamber pressure is 150 mbar, the p++ type that growth thickness is 50 nm in the GaN layer of p-type doping
GaN contact electrode layer 9, later 650 DEG C at a temperature of, N2Anneal 1000 s in atmosphere, is down to room temperature then to get tool is arrived
There is the high-performance GaN base light emitting structure of the miniature hole structure of nanometer.
The present invention has the advantages that compared with prior art.
The miniature hole layer of the nanometer that the present invention designs prepares efficient GaN light emitting diode, which not only contributes to drop
The stress of low quantum well region also helps the sub- well region of incrementss to carrier to reduce the piezoelectric polarization electric field of Quantum Well
Constraint ability, the leakage of carrier is reduced, to improve the internal quantum efficiency of GaN base light emitting.
Detailed description of the invention
Fig. 1 is the schematic cross-section of high-performance GaN base light emitting of the invention.
In figure, 1 is substrate, and 2 be GaN nucleating layer, and 3 be u-GaN layers, and 4 be the GaN layer of n-type doping, and 5 be the miniature hole of nanometer
Layer, 6 be InGaN/GaN quantum well layer, and the 7 AlGaN electronic barrier layers adulterated for p-type, 8 be the GaN layer of p-type doping, and 9 be electrode
Contact layer, 51 be the miniature hole forming layer of nanometer, and 52 be the miniature hole layer process layer of nanometer, and 61 be GaN barrier layer, and 62 be InGaN gesture
Well layer.
Specific embodiment
Following further describes the present invention with reference to the drawings.
As shown in Figure 1, a kind of high-performance GaN base light emitting structure of the present invention, including what is successively grown on substrate 1
GaN nucleating layer 2, u-GaN layer 3, the miniature hole layer 5 of GaN layer 4, nanometer of n-type doping, InGaN/GaN quantum well layer 6, p-type are adulterated
AlGaN electronic barrier layer 7, p-type doping GaN layer 8 and contact electrode layer 9, nanometer miniature hole layer 5 includes handing over from bottom to top
For the miniature hole forming layer 51 of nanometer and nanometer miniature hole the layer process layer 52 of stacking, trimethyl gallium mix growth on silicon layer 51 have it is multiple
Nano island, the miniature hole layer process layer 52 of nanometer are used to carry out smooth treatment to the surface of nano island.
InGaN/GaN quantum well layer 6 by x InGaN potential well layer with x+1 GaN barrier layer is alternately laminated forms, wherein 5
≤x≤15。
The bottom surface radius of nano island smooth, cone of uniform size for surface, cone is 50~100 nm, is highly
30~50 nm, the spacing between two neighboring cylindrical body are 300~500 nm.
Wherein, the material of substrate 1 is Sapphire Substrate, the miniature hole forming layer 51 of nanometer and the miniature hole layer process layer 52 of nanometer
Quantity it is identical, be 3~10 layers, material used in the miniature hole forming layer 51 of nanometer be Si doping, with TMGa(trimethyl gallium)
For the GaN of the source Ga growth, material used in the layer process layer 52 of nanometer miniature hole is that Si is adulterated, with TEGa(triethyl-gallium) for the source Ga
The GaN of growth.The miniature hole forming layer 51 of nanometer makes the surface of n-type doping GaN layer 4 grow up to a nanometer island, at the miniature hole layer of nanometer
Layer 52 is managed the processing of nanometer island body structure surface, smooth surface, nano island of uniform size are formed, to realize the volume of growth
Sub- well layer is in the mixed structure of two and three dimensions.
The present invention also provides a kind of preparation methods of high-performance GaN base light emitting structure, it is characterised in that including with
Lower step:
S1. substrate 1 is at a temperature of 1070 DEG C, H2300 s of reduction treatment in atmosphere；
S2. using trimethyl gallium as gallium source, NH3As nitrogen source, N2As carrier gas, growth temperature is 550 DEG C, the time 150
S, chamber pressure are 600 mbar, and annealing temperature is 1040 DEG C, and the time is 200 s, and growth thickness is 25 nm on substrate 1
GaN nucleating layer 2；
S3. using trimethyl gallium as gallium source, NH3As nitrogen source, N2As carrier gas, growth temperature is 1060 DEG C, growth time
For 3600 s, chamber pressure is 600 mbar, the undoped u-GaN of high temperature that growth thickness is 2 μm on GaN nucleating layer 2
Layer 3；
S4. using trimethyl gallium as gallium source, SiH4As silicon source, NH3As nitrogen source, N2As carrier gas, growth temperature 1065
DEG C, growth time is 1800 s, and chamber pressure is 600 mbar, the N that growth thickness is 1 μm on undoped u-GaN layer 3
The GaN layer 4 of type doping；
S5. using trimethyl gallium as gallium source, SiH4As silicon source, NH3As nitrogen source, N2As carrier gas, growth temperature 950
DEG C, growth time is 800 s, and chamber pressure is 600 mbar, and growth thickness is 50 nm's in the GaN layer 4 of n-type doping
The miniature hole forming layer 51 of GaN layer, i.e. nanometer；
In this step, trimethyl gallium mixes silicon and the surface of n-type doping GaN layer 4 is grown up to a nanometer island.
S6. using triethyl-gallium as gallium source, SiH4As silicon source, NH3As nitrogen source, N2As carrier gas, growth temperature is
950 DEG C, growth time is 800 s, and chamber pressure is 600 mbar, and growth thickness is on the miniature hole forming layer 51 of nanometer
The miniature hole layer process layer 52 of the GaN layer of 50nm, i.e. nanometer；
In this step, triethyl-gallium mixes silicon the processing of nanometer island body structure surface, forms smooth surface, nanometer of uniform size
Island.
S7. it is based on step S5 and S6, the miniature hole forming layer 51 of cycling deposition nanometer in the miniature hole layer process layer 52 of nanometer
With nanometer miniature hole layer 522~9 period of process layer, the miniature hole layer 5 of nanometer is formed；
S8. use triethyl-gallium for gallium source, NH3For nitrogen source, N2For carrier gas, SiH4As doped source, growth temperature is 840 DEG C,
Growth time is 1000 s, and chamber pressure is 400 mbar, and growth thickness is 12 nm in the miniature hole layer process layer 52 of nanometer
Si doping GaN barrier layer 61；
S9. using triethyl-gallium as gallium source, TMln is indium source, NH3For nitrogen source, N2For carrier gas, it is 740 DEG C in temperature, reacts chamber pressure
Power is 400 mbar, and growth time is 300 s, the InGaN potential well layer 62 with a thickness of 3nm grown on GaN barrier layer 61；
S10. use triethyl-gallium for gallium source, NH3For nitrogen source, N2For carrier gas, SiH4As doped source, growth temperature is 840 DEG C,
Growth time is 1000 s, and chamber pressure is 400 mbar, and growth thickness is that the Si of 12 nm mixes on InGaN potential well layer 62
Miscellaneous GaN barrier layer 61；
S11. it is based on step S9 and S10,614~14 periods of cycling deposition InGaN potential well layer 62 and GaN barrier layer are formed
InGaN/GaN quantum well layer 6；
S12. use trimethyl gallium for gallium source, trimethyl aluminium is silicon source, and trimethyl indium is indium source, and two luxuriant magnesium are magnesium source, to GaN gesture
Barrier layer 61 realizes p-type doping, NH3As nitrogen source, N2For carrier gas, growth temperature is 920 DEG C, and growth time is 300 s, reaction
Chamber pressure is 200 mbar, forms the AlGaN electronic barrier layer 7 adulterated with a thickness of the p-type of 50 nm；
S13. use trimethyl gallium for gallium source, two luxuriant magnesium are magnesium source, NH3As nitrogen source, N2For carrier gas, growth temperature 960
DEG C, growth time is 3000 s, and chamber pressure is 200 mbar, is grown on the AlGaN electronic barrier layer 7 of p-type doping thick
The GaN layer 8 that the p-type that degree is 250nm is adulterated；
S14. use trimethyl gallium for gallium source, two luxuriant magnesium are magnesium source, NH3As nitrogen source, nitrogen is carrier gas, growth temperature 960
DEG C, growth time 300s, chamber pressure is 150 mbar, the p++ that growth thickness is 50 nm in the GaN layer 8 of p-type doping
Type GaN contact electrode layer 9, later 650 DEG C at a temperature of, N2Anneal 1000 s in atmosphere, is down to room temperature then to get arriving
High-performance GaN base light emitting structure with the miniature hole structure of nanometer.
The preparation method is GaN nanometers of speed of growth differential growth using two kinds of organic sources of trimethyl gallium and triethyl-gallium
Island, thus to prepare the light emitting diode of miniature hole structure Quantum Well.The structure not only has the stress using the sub- well region of reduction amount
To reduce the piezoelectric polarization electric field of Quantum Well, and the sub- well region of incrementss is also helped to the constraint ability of carrier, reduce
The leakage of carrier realizes the preparation of high-performance light emitting diode to improve the internal quantum efficiency of GaN base light emitting,
Suitable for industrialized production.
Although being particularly shown and describing the present invention, those skilled in the art referring to its exemplary embodiment
It should be understood that in the case where not departing from the spirit and scope of the present invention defined by claim form can be carried out to it
With the various changes in details.
Claims (5)
1. a kind of high-performance GaN base light emitting structure, it is characterised in that: include the GaN that is successively grown on substrate (1) at
Stratum nucleare (2), u-GaN layers (3), the miniature hole layer of GaN layer (4), the nanometer of n-type doping (5), InGaN/GaN quantum well layer (6), p-type
The GaN layer (8) and contact electrode layer (9) that the AlGaN electronic barrier layer (7) of doping, p-type are adulterated, the miniature hole layer (5) of nanometer include
The miniature hole forming layer (51) of alternately stacked nanometer and the miniature hole layer process layer (52) of nanometer from bottom to top, trimethyl gallium mixes silicon layer
(51) growth has multiple nano islands on, and the miniature hole layer process layer (52) of nanometer is used to carry out smooth treatment to the surface of nano island.
2. a kind of high-performance GaN base light emitting structure according to claim 1, it is characterised in that: the InGaN/
GaN quantum well layer (6) by x InGaN potential well layer with (x+1) a GaN barrier layer is alternately laminated forms, wherein 5≤x≤15.
3. a kind of high-performance GaN base light emitting structure according to claim 1, it is characterised in that: the nano island
For surface is smooth, cone of uniform size, it is highly 30~50 nm that the bottom surface radius of cone, which is 50~100 nm, adjacent
Spacing between two cylindrical bodies is 300~500 nm.
4. a kind of high-performance GaN base light emitting structure according to claim 1, it is characterised in that: the nanometer is micro-
Type hole forming layer (51) is identical with the quantity of the miniature hole layer process layer (52) of the nanometer, is 3~10 layers, the nanometer is miniature
Material used in forming layer (51) is cheated as Si doping, is the GaN of the source Ga growth with TMGa, the miniature hole layer process layer of nanometer
(52) material used in is Si doping, is the GaN of the source Ga growth with TEGa.
5. a kind of preparation method of high-performance GaN base light emitting structure, it is characterised in that the following steps are included:
S1. substrate (1) is at a temperature of 1070 DEG C, H2Reduction treatment 300s in atmosphere；
S2. using trimethyl gallium as gallium source, NH3As nitrogen source, N2As carrier gas, growth temperature is 550 DEG C, the time 150
S, chamber pressure are 600 mbar, and annealing temperature is 1040 DEG C, and the time is 200 s, and growth thickness is 25 nm on substrate (1)
GaN nucleating layer (2)；
S3. using trimethyl gallium as gallium source, NH3As nitrogen source, N2As carrier gas, growth temperature is 1060 DEG C, growth time
For 3600 s, chamber pressure is 600 mbar, the undoped u- of high temperature that growth thickness is 2 μm on GaN nucleating layer (2)
GaN layer (3)；
S4. using trimethyl gallium as gallium source, SiH4As silicon source, NH3As nitrogen source, N2As carrier gas, growth temperature 1065
DEG C, growth time is 1800 s, and chamber pressure is 600 mbar, and growth thickness is 1 μm on u-GaN layers undoped (3)
N-type doping GaN layer (4)；
S5. using trimethyl gallium as gallium source, SiH4As silicon source, NH3As nitrogen source, N2As carrier gas, growth temperature 950
DEG C, growth time 800s, chamber pressure is 600 mbar, and growth thickness is 50 nm's in the GaN layer (4) of n-type doping
The miniature hole forming layer (51) of GaN layer, i.e. nanometer；
S6. using triethyl-gallium as gallium source, SiH4As silicon source, NH3As nitrogen source, N2As carrier gas, growth temperature 950
DEG C, growth time 800s, chamber pressure is 600 mbar, and growth thickness is 50 on the miniature hole forming layer (51) of nanometer
The miniature hole layer process layer (52) of the GaN layer of nm, i.e. nanometer；
S7. it is based on step S5 and S6, the miniature hole forming layer (51) of cycling deposition nanometer on the miniature hole layer process layer (52) of nanometer
With nanometer miniature hole layer (52) 2~9 period of process layer, the miniature hole layer (5) of nanometer is formed；
S8. use triethyl-gallium for gallium source, NH3For nitrogen source, N2For carrier gas, SiH4As doped source, growth temperature is 840 DEG C, raw
It is for a long time 1000 s, chamber pressure is 400 mbar, and growth thickness is 12 nm on the miniature hole layer process layer (52) of nanometer
Si doping GaN barrier layer (61)；
S9. using triethyl-gallium as gallium source, TMln is indium source, NH3For nitrogen source, N2For carrier gas, it is 740 DEG C in temperature, reacts chamber pressure
Power is 400 mbar, and growth time is 300 s, the InGaN potential well layer with a thickness of 3 nm grown on GaN barrier layer (61)
(62)；
S10. use triethyl-gallium for gallium source, NH3For nitrogen source, N2For carrier gas, SiH4As doped source, growth temperature is 840 DEG C,
Growth time is 1000 s, and chamber pressure is 400 mbar, and growth thickness is that the Si of 12nm mixes on InGaN potential well layer (62)
Miscellaneous GaN barrier layer (61)；
S11. step S9 and S10, (61) 4~14 periods of cycling deposition InGaN potential well layer (62) and GaN barrier layer, shape are based on
At InGaN/GaN quantum well layer (6)；
S12. use trimethyl gallium for gallium source, trimethyl aluminium is silicon source, and trimethyl indium is indium source, and two luxuriant magnesium are magnesium source, to GaN gesture
Barrier layer (61) realizes p-type doping, NH3As nitrogen source, N2For carrier gas, growth temperature is 920 DEG C, and growth time is 300 s, reaction
Chamber pressure is 200 mbar, forms the AlGaN electronic barrier layer (7) adulterated with a thickness of the p-type of 50 nm；
S13. use trimethyl gallium for gallium source, two luxuriant magnesium are magnesium source, NH3As nitrogen source, N2For carrier gas, growth temperature is 960 DEG C,
Growth time is 3000 s, and chamber pressure is 200 mbar, the growth thickness on the AlGaN electronic barrier layer (7) of p-type doping
The GaN layer (8) adulterated for the p-type of 250 nm；
S14. use trimethyl gallium for gallium source, two luxuriant magnesium are magnesium source, and for NH3 as nitrogen source, nitrogen is carrier gas, growth temperature 960
DEG C, growth time 300s, chamber pressure is 150 mbar, the p+ that growth thickness is 50 nm in the GaN layer (8) of p-type doping
+ type GaN contact electrode layer 9, later 650 DEG C at a temperature of, N2Anneal 1000 s in atmosphere, is down to room temperature then to get arriving
High-performance GaN base light emitting structure with the miniature hole structure of nanometer.
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