CN106847810A - Modified GTO structures, control method and preparation method that BJT is aided in - Google Patents
Modified GTO structures, control method and preparation method that BJT is aided in Download PDFInfo
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
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Abstract
Modified GTO structures, control method and preparation method the invention discloses a kind of BJT auxiliary, modified GTO devices use single-chip integration mode one bipolar junction transistor BJT of auxiliary type of parallel connection on gate turn off thyristor GTO, GTO in parallel and BJT shared electrodes, and electrode includes negative electrode, anode and gate pole；Control method is turned on according to positive bias voltage change between the anode of device and negative electrode, control GTO structures is applied to the mode of operation of BJT, or is turned on the mode of operation that BJT and GTO is opened jointly；Preparation method increases ion implanting in the technological process of current GTO or BJT, and the preparation technology with current GTO and BJT is compatible.The present invention disclosure satisfy that the switching between low current mode of operation and high current mode of operation, be conducive to reducing the power attenuation of device, and effectively increase the switching speed of original GTO, it is adaptable to the big power electronic system of load change.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular to a kind of modified GTO structures, the control method of BJT auxiliary
And preparation method.
Background technology
Modern power electronics technology had become one and is related to the wide independence in field and day by the development of more than 30 years
The important subject for becoming ripe, its no matter the transformation to traditional industry or the development to new high-tech industry suffer from it is most important
Effect.The application field that it is related to covers each industrial department of national economy, be 21 century important key technology it
One.Power electronic devices is the important foundation of Power Electronic Technique, is that power application electronic technology carries out transformation of electrical energy and control
Core parts.Power electronic devices is progressively ripe by the development of decades, especially Si bases power electronic devices
Development has reached the theoretical limit of Si materials, in order to develop the power electronic devices of higher performance.
The current power electronics device for generally obtaining higher performance as the alternative materials of Si using SiC and GaN in the world
Part.But, although SiC and GaN material have forbidden band wider, are more suitable for doing high tension apparatus, but intrinsic carrier concentration is low,
Built-in potential is higher, causes the forward conduction voltage drop of its single PN junction for preparing also very big, up to 2.8V.GTO is widely used in height
In pressing the high-power system of high current, its half structure cell referring to Fig. 2 and VA characteristic curve referring to Fig. 4, but GTO positive guide
Logical pressure drop is larger, especially the GTO devices of broad stopband, and its cut-in voltage reaches 2.8V, the forward conduction of power device is lost
It is larger.BJT is generally used in middle low power system, has the advantages that switching speed is fast, and the gain of BJT is limited, turns on high current
When need larger Base injection electric current, cause drive loss big, its half structure cell referring to Fig. 1 and VA characteristic curve referring to
Fig. 3, therefore, the device that low current is applied to the range of application wide of high current again is not not only suitable in existing power electronic devices
Part, it is impossible to adapt to the system that load is changed greatly.
The content of the invention
For defect of the prior art, the present invention provide a kind of modified GTO structures of BJT auxiliary, control method and
Preparation method, low in energy consumption and switching speed is fast, disclosure satisfy that in low current mode of operation (BJT patterns) and high current mode of operation
Switch between (GTO patterns), be on the one hand conducive to reducing the power attenuation of device, on the other hand effectively increase original
The switching speed of GTO, therefore the device is applied to the big power electronic system of load change.
In order to solve the above technical problems, the present invention provides following technical scheme：
On the one hand, the invention provides a kind of modified GTO structures of BJT auxiliary, GTO devices are by technique monolithic collection
Into mode gate turn off thyristor GTO and bipolar junction transistor BJT are carried out into integrated semiconductor devices in parallel；
GTO in parallel and BJT shared electrodes, and the electrode includes negative electrode, anode and gate pole.
Further, the GTO is p-type gate turn off thyristor, and the BJT is positive-negative-positive bipolar junction transistor, and P
Type GTO is in parallel with positive-negative-positive BJT.
Further, the device being made up of p-type GTO and positive-negative-positive BJT in parallel includes：
P-type collecting zone, N-type base, P drift area, N-type launch site and the p-type launch site being sequentially connected；
And p-type collecting zone is the anode of the device, N-type base includes the gate pole of the GTO structures, N-type launch site
And p-type launch site is the negative electrode of the device.
Further, the GTO is N-type gate turn off thyristor, and the BJT is bipolar npn junction transistor, and N
Type GTO is in parallel with NPN type BJT.
Further, the device being made up of N-type GTO and NPN type BJT in parallel includes：
N-type launch site, p-type base, N-type drift region, p-type collecting zone and the N-type collecting zone being sequentially connected；
And N-type launch site is the negative electrode of the device, p-type base includes the gate pole of the device, p-type collecting zone and N
Type collecting zone is the anode of the device.
On the one hand, the invention provides a kind of control method of described GTO structures, it is characterised in that the controlling party
Method includes：
According to the change for being applied to positive bias voltage between the anode of the device and negative electrode, the device is controlled with described
The mode of operation conducting of BJT, or turned on the mode of operation that the BJT and GTO is opened jointly.
Further, the basis is applied to the change of positive bias voltage between the anode of the device and negative electrode, control
The device is turned on the mode of operation of the BJT, or is turned on the mode of operation that the BJT and GTO is opened jointly,
Including：
Step 1. adds positive bias voltage between the anode and negative electrode of the device so that the device is in positive resistance
Disconnected state；
Step 2. applies positive bias voltage and cut-in voltage of the forward bias voltage less than GTO between gate pole and negative electrode,
The BJT opens mode of operation so that the device is turned on the mode of operation of the BJT；
Step 3. increases the positive bias for causing the device anode and negative electrode two ends in the electric current for flowing through the device
Voltage is equal to or higher than the cut-in voltage of GTO, and the GTO opens mode of operation, and is worked simultaneously with the BJT.
Further, methods described also includes：
Apply anti-bias voltage between the gate pole and negative electrode of the device, the gate current for flowing through the device is negative electricity
Stream so that the device shut-off.
On the other hand, the invention provides a kind of preparation method of described GTO structures, it is characterised in that the preparation
Method includes：
A novel power semiconductor is made, in existing gate turn off thyristor GTO or bipolar junction transistor
In BJT power semiconductor preparation process, overleaf part injection is opposite with current device back side doping type to increase by a step
Impurity processing step, formed novel power semiconductor structure.
Further, it is described to make a modified GTO structure for BJT auxiliary, in existing gate turn off thyristor GTO
Or in bipolar junction transistor BJT power semiconductor preparation process, increase a step overleaf part injection and current device
The processing step of the opposite impurity of back side doping type, forms the modified GTO structures of BJT auxiliary, including：
Step A. pre-processes wafer, and multiple etching formation front description on the wafer after the pre-treatment；
Step B. carries out multiple ion implanting in wafer frontside, obtains gate pole contact window and terminal structure；
If step C. current semiconductors are BJT, inject opposite with original doping type miscellaneous in the back portion of BJT
Matter so that form GTO in original BJT structures；If current semiconductor is GTO, mixed with original in the back portion injection of GTO
The opposite impurity of miscellany type so that form BJT in original GTO structures；
Step D. carries out annealing activation to the ion for injecting, and completes to sacrifice oxidation, metal contact process, surface passivation work
Skill and metal interconnection process, and form final metal electrode.
As shown from the above technical solution, a kind of modified GTO structures of BJT auxiliary of the present invention, control method and
Preparation method, the modified GTO structures of BJT auxiliary are by gate turn off thyristor GTO by the single chip integrated mode of technique
The semiconductor devices integrated with bipolar junction transistor BJT；GTO in parallel and BJT shared electrodes, and the electrode includes the moon
Pole, anode and gate pole.The present invention disclosure satisfy that in low current mode of operation (BJT patterns) and high current mode of operation (GTO moulds
Formula) between switch, be on the one hand conducive to reducing the power attenuation of device, on the other hand effectively increase opening for original GTO
Speed is closed, therefore the device is readily applicable to the big power electronic system of load change.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
The accompanying drawing to be used needed for having technology description is briefly described, it should be apparent that, drawings in the following description are the present invention
Some embodiments, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
These accompanying drawings obtain other accompanying drawings.
Fig. 1 is half cellular structure chart of traditional BJT structures of the prior art；
Fig. 2 is half cellular structure chart of traditional GTO structures of the prior art；
Fig. 3 is the VA characteristic curve figure of the SiC BJT of traditional structure of the prior art；
Fig. 4 is the VA characteristic curve figure of the SiC GTO of traditional structure of the prior art；
Fig. 5 is a kind of structural representation of the modified GTO structures of BJT auxiliary in the embodiment of the present invention one；
Fig. 6 is the knot of the first specific embodiment of the modified GTO structures of the BJT auxiliary in the embodiment of the present invention two
Structure schematic diagram；
Fig. 7 is the knot of second specific embodiment of the modified GTO structures of the BJT auxiliary in the embodiment of the present invention three
Structure schematic diagram；
Fig. 8 is the equivalent structure figure of the modified GTO structures of the BJT auxiliary in the application examples of device of the present invention；
Fig. 9 is the equivalent circuit diagram of the modified GTO structures of the BJT auxiliary in the application examples of device of the present invention；
Figure 10 is the VA characteristic curve of the modified GTO structures of the BJT auxiliary in the application examples of device of the present invention
Figure；
Figure 11 is a kind of specific reality of the control method of the modified GTO structures of the BJT auxiliary in the embodiment of the present invention four
Apply the structural representation of mode；
Figure 12 is a kind of specific reality of the preparation method of the modified GTO structures of the BJT auxiliary in the embodiment of the present invention five
Apply the structural representation of mode.
Specific embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, clear, complete description is carried out to the technical scheme in the embodiment of the present invention, it is clear that described embodiment is
A part of embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art
The every other embodiment obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
Embodiments of the invention one provide a kind of modified GTO structures of BJT auxiliary.Referring to Fig. 5, BJT auxiliary
The modified GTO structures of modified GTO structures BJT auxiliary specifically include following content：
GTO devices are by gate turn off thyristor GTO and bipolar junction transistor BJT by the single chip integrated mode of technique
Carry out integrated semiconductor devices in parallel；
The GTO is in parallel with BJT, and the GTO and BJT shared electrodes after parallel connection, and the electrode includes negative electrode
Cathode, anode A node and gate pole Gate.
In the foregoing description, the forward bias voltage in the modified GTO structures of BJT auxiliary are carried in is opened less than GTO
When opening voltage, the BJT forward conductions and the GTO are in forward blocking pattern, are equal to or higher than in forward bias voltage and opened
When opening voltage, the GTO and BJT is in forward conduction state simultaneously, from for the angle of cellular, the modified GTO of BJT auxiliary
Structure can be regarded as in the back portion injection of the BJT impurity opposite with the original doping type in the back side, so as in original BJT knots
GTO is formed in structure；Or can also regard as on the architecture basics of GTO by introducing BJT structures of adulterating
Knowable to foregoing description, embodiments of the invention are integrated with gate pole in the modified GTO structures that a BJT is aided in
The modified GTO structures of cutoff thyristor GTO and bipolar junction transistor BJT, the BJT auxiliary can be operated in low current
BJT patterns, the pattern that GTO and BJT are simultaneously turned on is operated in high current, effectively increases the scope of application of device, and
By feedback control, device can track the change of load and change mode of operation automatically.
The first specific embodiment of the modified GTO structures of above-mentioned BJT auxiliary is provided in embodiments of the invention.
Referring to Fig. 6, the modified GTO structures of BJT auxiliary specifically include following content：
P-type GTO in parallel and positive-negative-positive BJT, and BJT auxiliary modified GTO structures be sequentially connected p-type collecting zone,
N-type base, P drift area, N-type launch site and p-type launch site.
In the foregoing description, the GTO is p-type gate turn off thyristor, and the BJT is positive-negative-positive bipolar junction transistor；
And p-type collecting zone is the anode of the device, N-type base includes the gate pole of the device, N-type launch site and p-type launch site
It is the negative electrode of the device.
Knowable to foregoing description, embodiments of the invention give the specific knot of one kind of the modified GTO structures of BJT auxiliary
Structure, effectively improves the operating efficiency of device.
Second specific embodiment of the modified GTO structures of above-mentioned BJT auxiliary is provided in embodiments of the invention.
Referring to Fig. 7, the modified GTO structures of BJT auxiliary specifically include following content：
N-type GTO in parallel and NPN type BJT, and BJT auxiliary modified GTO structures be sequentially connected N-type launch site,
P-type base, N-type drift region, p-type collecting zone and N-type collecting zone.
In the foregoing description, the GTO is N-type gate turn off thyristor, and the BJT is bipolar npn junction transistor,
And N-type launch site is the negative electrode of the device, p-type base includes the gate pole of the device, p-type collecting zone and N-type collecting zone
It is the anode of the device.
Knowable to foregoing description, the another kind that embodiments of the invention give the modified GTO structures of BJT auxiliary is specific
Structure so that realize the device mode diversity is high and strong applicability.
It is further instruction this programme, the modified GTO structures present invention also offers a kind of BJT auxiliary are for changeable
Change the concrete application example of the modified GTO structures of the BJT auxiliary of load.Referring to Fig. 8 to 10, the modified GTO knots of BJT auxiliary
Structure particular content is as follows：
The modified GTO structures of BJT auxiliary can regard a p-type GTO and a BJT for positive-negative-positive as simultaneously from structure
Connection is formed, and GTO and BJT have all of electrode (the modified GTO structures of p-type structure BJT auxiliary)；Or can regard as
The BJT of one N-type GTO and a NPN type is formed in parallel, and GTO and BJT have all of electrode (N type junction structure BJT auxiliary
Modified GTO structures).By taking the modified GTO structures of N type junction structure BJT auxiliary as an example, structure includes cathodic metal, N from top to bottom
Type launch site, gate metal, p-type base, N-type drift region, p-type collecting zone, N-type collecting zone, anode metal.
Knowable to foregoing description, application examples of the invention effectively increases the scope of application of device.
The embodiment provides a kind of specific reality of the control method of the modified GTO structures of above-mentioned BJT auxiliary
Apply mode.Referring to Figure 11, the control method specifically includes following content：
According to the change for being applied to positive bias voltage between the anode of the device and negative electrode, the device is controlled with described
The mode of operation conducting of BJT, or turned on the mode of operation that the BJT and GTO is opened jointly, comprise the following steps that：
Step 100：Positive bias voltage is added between the anode and negative electrode of the device so that the device is in forward direction
Blocking state.
Step 200：Apply positive bias voltage between gate pole and negative electrode and unlatching electricity of the forward bias voltage less than GTO
Pressure, the BJT opens mode of operation so that the device is turned on the mode of operation of the BJT.
Step 300：Increase the positively biased for causing the device anode and negative electrode two ends in the electric current for flowing through the device
Cut-in voltage of the voltage equal to or higher than GTO is put, the GTO opens mode of operation, and is worked simultaneously with the BJT.
Step 400：Apply anti-bias voltage between the gate pole and negative electrode of the device, flow through the gate pole electricity of the device
It is negative current to flow so that the device shut-off.
Knowable to foregoing description, The embodiment provides a kind of controlling party of the modified GTO structures of BJT auxiliary
Method so that the modified GTO structures of BJT auxiliary can be operated in BJT patterns in low current, be operated in high current
The pattern that GTO and BJT are simultaneously turned on, effectively increases the scope of application of device.
It is further instruction this programme, present invention also offers the concrete application example of above-mentioned device control method, the control
Method particular content processed is as follows：
By taking the modified GTO structures of N type junction structure BJT auxiliary as an example, the work of the modified GTO structures of structure BJT auxiliary
Principle is as follows：
Opening process：Add positive bias, i.e. U between the anode and cathode firstAKDuring ＞ 0, p-type base and N-type drift region
Between PN junction be in reverse-biased, assume responsibility for the bias voltage of outside, launch site do not provide electronics, and whole device is not turned on, place
In forward blocking state.Now apply forward voltage, i.e. U between gate pole and negative electrodeGK＞ 0, between N-type launch site and p-type base
The few sub- injection effect that brings of PN junction forward bias the electronics of N-type launch site is entered p-type base by the PN junction.With electricity
Son gos deep into p-type base, and, with the hole-recombination in p-type base, the hole lost because being combined is by gate pole Injection Current for part electronics
Supplement.The thickness of usual p-type base is smaller, and most of electrons reach the PN junction that N-type drift region and p-type base are formed, herein
Place's electrons are captured by electric field, are transported to N-type drift region, so that whole device is turned on the pattern of BJT.If device is with BJT
After pattern conducting, the electric current for flowing through device persistently increases, and the pressure drop of device anode and negative electrode two ends increases therewith, when electric current reaches
During to a certain critical value, the pressure drop at device anode and negative electrode two ends reaches the cut-in voltage of GTO, will cause p-type collecting zone and N-type
Drift about interval PN junction forward conduction, and the hole of p-type collecting zone pours in N-type drift region, and conductance modulation is formed in drift region
Effect, the electric current for flowing through whole device increases rapidly, and now device is operated in the pattern that GTO and BJT works simultaneously.
Turn off process：Apply backward voltage, i.e. U between gate pole and negative electrodeGK＜ 0, now N-type launch site and p-type base
Between PN junction reverse bias, few sub- injection effect in p-type base disappears, at the same remaining carrier occur it is compound or from door
Pole is extracted, and the negative current of gate pole is formed, while the PN junction between p-type base and N-type drift region is returned to bears external reversed bias voltage
State, device shut-off.
Knowable to foregoing description, application examples of the invention is given by taking the modified GTO structures that N type junction structure BJT is aided in as an example
The operation principle and control process of the modified GTO structures of structure BJT auxiliary, effectively increase the scope of application of device, and
And by feedback control, device can track the change of load and change mode of operation automatically.
One kind that the preparation method of the modified GTO structures of above-mentioned BJT auxiliary is provided in embodiments of the invention is specific
Implementation method.Referring to Figure 12, the preparation method specifically includes following content：
A novel power semiconductor is made, in existing gate turn off thyristor GTO or bipolar junction transistor
In BJT power semiconductor preparation process, overleaf part injection is opposite with current device back side doping type to increase by a step
Impurity processing step, formed novel power semiconductor structure, comprise the following steps that：
Step A00：Pretreatment wafer, and multiple etching formation front description on the wafer after the pre-treatment.
Step B00：Multiple ion implanting is carried out in wafer frontside, gate pole contact window, terminal structure is obtained.
Step C00：If current semiconductor is BJT, inject opposite with original doping type miscellaneous in the back portion of BJT
Matter so that form GTO in original BJT structures；If current semiconductor is GTO, mixed with original in the back portion injection of GTO
The opposite impurity of miscellany type so that form BJT in original GTO structures.
Step D00：Ion to injecting carries out annealing activation, and completes to sacrifice oxidation, metal contact process, surface passivation
Technique and metal interconnection process, and form final metal electrode.
Knowable to foregoing description, The embodiment provides one kind side of preparation of the modified GTO structures of BJT auxiliary
Method so that the GTO structures can be operated in BJT patterns in low current, GTO is operated in high current and BJT is simultaneously turned on
Pattern, effectively increase the scope of application of device.
It is further instruction this programme, present invention also offers the concrete application example of above-mentioned device preparation method, the control
Method particular content processed is as follows：
The preparation method of the modified GTO structures of described BJT auxiliary and the preparation technology of GTO or BJT are substantially compatible,
Only need to increase by a step ion implanting in the preparation technology flow of GTO or BJT, specifically be prepared with the BJT of compatible NPN type
As a example by technique：After the base ion implanting only needed in the preparation flow of BJT during the modified GTO structures for preparing BJT auxiliary,
Increase by a step, a step ion implanting is overleaf carried out in subregion, then carry out annealing activation, other processing steps can be with
Directly continue to use the technological process of BJT.
S1, wafer prepare, by taking the commercialized wafer for preparing BJT as an example.
S2,10min organic ultrasonic cleanings are carried out using acetone, surface is then cleaned with the concentrated sulfuric acid, then using RCA standards
Method for cleaning wafer cleaning wafer, is finally soaked 5 minutes with 10% hydrofluoric acid solution, and the oxide layer for removing crystal column surface is thin
Film.
S3, formation N-type launch site table top：First, layer of metal or other materials is deposited in crystal column surface to be hindered as mask
Barrier, then carries out photoetching and shifts the figure for obtaining N-type launch site by first piece of mask plate, then etches away unnecessary mask
Barrier material simultaneously removes photoresist, obtains mask pattern, is then used by the equipment such as RIE or ICP or other method is partly led
Body material etch, forms the figure of N-type launch site on wafer, while alignment mark L0 is formed, final removal mask blocks layer
And cleaning wafer.
S4, formation p-type base table top：First, layer of metal or other materials are deposited as mask blocks in crystal column surface
Layer, then shifts the figure for obtaining p-type base by second piece of mask plate photoetching, then etches away unnecessary mask blocks material
And photoresist is removed, and mask pattern is obtained, being then used by the equipment such as RIE or ICP or other method carries out semi-conducting material quarter
Erosion, forms the figure of p-type base on wafer, and pattern alignment L0 layers of contrasting marking, final removal mask blocks layer simultaneously cleans crystalline substance
Circle.
S5, carry out ion implanting in p-type base：First, crystal column surface deposit layer of metal or other materials as from
Sub- implant blocking layer, then shifts the window figure that carry out ion implanting for obtaining p-type base by the 3rd piece of mask plate photoetching
Shape, then etches away unnecessary mask blocks material, forms ion implanting and stops window, and ion is then carried out under suitable conditions
Injection, so as to improve the doping concentration of gate pole contact area, is easy to form Ohmic contact and reduces contact resistance.
S6, carry out ion implanting in terminal area：First, crystal column surface deposit layer of metal or other materials as from
Sub- implant blocking layer, then shifts the ion implanting graph window for obtaining terminal structure, then by the 4th piece of mask plate photoetching
Unnecessary mask blocks material is etched away, ion implanting is formed and is stopped window, ion implanting is then carried out under suitable conditions, from
And the terminal structure of GR is formed, and the voltage endurance capability of device is effectively improved, all barrier materials of final removal crystal column surface are simultaneously
Cleaning wafer.
After S7, completion front ion implanting, one layer of SiO2 and AlN or carbon film etc. are deposited again in front high as surface
Protective layer during temperature annealing.
S8, overleaf carry out ion implanting：First, layer of metal or other materials is deposited in wafer rear to be noted as ion
Enter barrier layer, the ion implanting graph window for obtaining backside structure is then shifted by the 5th piece of mask plate photoetching, then etch
Fall unnecessary mask blocks material, form ion implanting and stop window, ion implanting is then carried out under suitable conditions, form knot
Dopant profiles needed for structure, all barrier materials and cleaning wafer of final removal crystal column surface；
After S9, completion backside particulate injection, overleaf deposit one layer of SiO2 and AlN or carbon film etc. is high as surface again
Protective layer during temperature annealing.
S10, the high annealing after ion implanting is carried out, so as to activate the ion being injected into semi-conducting material and make it again
Distribution, after the completion of annealing, removes protective layer and cleaning wafer.
S11, wafer frontside deposit one layer of SiO2 as sacrifice aoxidize, then deposit one layer of passivation layer.
S12, formation front p-type Ohmic contact：Front p-type ohm is obtained by the 6th piece of mask plate photoetching transfer first to connect
Graph window is touched, unnecessary sacrificial oxide layer and passivation layer is then etched away, p-type ohmic contact windows is formed, then in wafer
Surface deposition contacting metal, then removes photoresist and unnecessary metal by stripping technology, then cleans and dry wafer,
Metal annealing is carried out under the conditions of suitable, p-type Ohmic contact is formed.
S13, formation front N-type Ohmic contact：Front N-type ohm is obtained by the 7th piece of mask plate photoetching transfer first to connect
Graph window is touched, unnecessary sacrificial oxide layer and passivation layer is then etched away, N-type ohmic contact windows is formed, then in wafer
Surface deposition contacting metal, then removes photoresist and unnecessary metal by stripping technology, then cleans and dry wafer,
Metal annealing is carried out under the conditions of suitable, N-type Ohmic contact is formed.
S14, formation back surface ohmic contacts：Contacting metal is deposited by wafer rear, row metal annealing of going forward side by side is formed
Back surface ohmic contacts.
S15, the zone isolation in front formation gate pole and negative electrode：Thicker inter-level dielectric is deposited in front first, such as
BPSG etc., then shifts the inter-level dielectric figure obtained between front gate pole and negative electrode by the 8th piece of mask plate photoetching, then carves
The unnecessary inter-level dielectric of eating away, forms the inter-level dielectric figure between gate pole and negative electrode.
S16, the metal for forming gate pole and negative electrode in front are interconnected：One layer of thicker metal is integrally deposited in front first,
Such as Al or Ag, then shifts the electrode pattern for obtaining front gate pole and negative electrode by the 9th piece of mask plate photoetching, then passes through
Etching separates the electrode of gate pole and negative electrode, forms the outermost metal electrode of device, finally removes photoresist and cleans device
Surface, completes technique.
In structure, the modified GTO structures of BJT auxiliary can regard the parallel connection of GTO and BJT as, with N type junction structure
As a example by the modified GTO structures of BJT auxiliary, structure includes cathodic metal, N-type launch site, gate metal, p-type base from top to bottom
Area, N-type drift region, p-type collecting zone, N-type collecting zone, anode metal.For Si devices, the forward conduction voltage drop of PN junction is
0.7V, for SiC device, the forward conduction voltage drop of PN junction reaches 2.8V, and these pressure drops as produced by PN junction forward conduction exist
Extra loss can be brought during device normally.The new construction combines the advantage of BJT and GTO, in relatively low forward bias electricity
During pressure, device normally is simultaneously operated in the pattern of BJT, reduces because what GTO forward conduction voltage drops caused greatly larger leads
Logical loss, while in big forward bias voltage, device is fully on, is operated in the pattern that GTO and BJT works simultaneously, is
The circulation of high current provides path., its terminal structure has diversity during preparation structure, such as the terminal structure for using can be
Combination of JTE, FLR, FP etc. or different terminals structure etc..
The present invention can be operated in BJT patterns or GTO by controlling the input current of gate pole come control device and BJT is same
When the pattern that works, so can not only reduce the loss of system, system can also be made in underloading and heavy duty by feedback control
Under the conditions of flexibly switch, therefore the device is particularly suitable for loading the system being continually changing.Additionally, the preparation method of the new construction
Only a step ion implantation technology need to be added in the technological process of existing ripe GTO or BJT, therefore can be with current GTO
Or BJT process compatibles.
Knowable to foregoing description, application examples of the invention provides the preparation method of the modified GTO structures of BJT auxiliary,
Preparation process is simple, it is only necessary to the process of ion is moved in existing step so that the modified GTO structures of BJT auxiliary
Preparation fast and accurately, saved cost.
Above example is merely to illustrate technical scheme, rather than its limitations；Although with reference to the foregoing embodiments
The present invention has been described in detail, it will be understood by those within the art that：It still can be to foregoing each implementation
Technical scheme described in example is modified, or carries out equivalent to which part technical characteristic；And these are changed or replace
Change, do not make the spirit and scope of the essence disengaging various embodiments of the present invention technical scheme of appropriate technical solution.
Claims (10)
1. the modified GTO structures that a kind of BJT is aided in, it is characterised in that modified GTO devices are by single chip integrated mode
Gate turn off thyristor GTO and bipolar junction transistor BJT are carried out into integrated semiconductor devices in parallel；
GTO in parallel and BJT shared electrodes, and the electrode includes negative electrode, anode and gate pole.
2. the modified GTO structures that BJT according to claim 1 is aided in, it is characterised in that the GTO is that p-type gate pole is closed
Disconnected IGCT, the BJT is positive-negative-positive bipolar junction transistor, and p-type GTO is in parallel with positive-negative-positive BJT.
3. GTO structures according to claim 2, it is characterised in that the institute being made up of p-type GTO in parallel and positive-negative-positive BJT
Stating device includes：
P-type collecting zone, N-type base, P drift area, N-type launch site and the p-type launch site being sequentially connected；
And p-type collecting zone is the anode of the device, N-type base includes the gate pole of the GTO structures, N-type launch site and p-type
Launch site is the negative electrode of the device.
4. GTO structures according to claim 1, it is characterised in that the GTO is N-type gate turn off thyristor, described
BJT is bipolar npn junction transistor, and N-type GTO is in parallel with NPN type BJT.
5. GTO structures according to claim 4, it is characterised in that the institute being made up of N-type GTO in parallel and NPN type BJT
Stating device includes：
N-type launch site, p-type base, N-type drift region, p-type collecting zone and the N-type collecting zone being sequentially connected；
And N-type launch site is the negative electrode of the device, p-type base includes the gate pole of the device, p-type collecting zone and N-type collection
Electric area is the anode of the device.
6. a kind of control method of GTO structures as described in any one of claim 1 to 5, it is characterised in that the control method
Including：
According to the change for being applied to positive bias voltage between the anode of the device and negative electrode, the device is controlled with the BJT
Mode of operation conducting, or turned on the mode of operation of the common unlatchings of the BJT and GTO.
7. control method according to claim 6, it is characterised in that the basis is applied to the anode and the moon of the device
The change of positive bias voltage between pole, controls the device to be turned on the mode of operation of the BJT, or with the BJT and GTO
The common mode of operation opened is turned on, including：
Step 1. adds positive bias voltage between the anode and negative electrode of the device so that the device is in forward blocking shape
State；
Step 2. applies positive bias voltage and cut-in voltage of the forward bias voltage less than GTO between gate pole and negative electrode, described
BJT opens mode of operation so that the device is turned on the mode of operation of the BJT；
Step 3. increases the positive bias voltage for causing the device anode and negative electrode two ends in the electric current for flowing through the device
Cut-in voltage equal to or higher than GTO, the GTO opens mode of operation, and is worked simultaneously with the BJT.
8. control method according to claim 6, it is characterised in that methods described also includes：
Apply anti-bias voltage between the gate pole and negative electrode of the device, flow through the gate current of the device for negative current,
So that the device shut-off.
9. a kind of preparation method of GTO structures as described in any one of claim 1 to 5, it is characterised in that the preparation method
Including：
A novel power semiconductor is made, in existing gate turn off thyristor GTO or bipolar junction transistor BJT work(
In rate semiconductor devices preparation process, overleaf the impurity opposite with current device back side doping type is injected in part to increase by a step
Processing step, formed novel power semiconductor structure.
10. preparation method according to claim 9, it is characterised in that one modified GTO of BJT auxiliary of the making
Structure, in existing gate turn off thyristor GTO or bipolar junction transistor BJT power semiconductor preparation process, increases
Plus one the step overleaf part injection impurity opposite with current device back side doping type processing step, form what BJT was aided in
Modified GTO structures, including：
Step A. pre-processes wafer, and multiple etching formation front description on the wafer after the pre-treatment；
Step B. carries out multiple ion implanting in wafer frontside, obtains gate pole contact window and terminal structure；
If step C. current semiconductors are BJT, the impurity opposite with original doping type is injected in the back portion of BJT, made
Form GTO in original BJT structures；If current semiconductor is GTO, in the back portion injection of GTO and original doping class
The opposite impurity of type so that form BJT in original GTO structures；
Step D. carries out annealing activation to the ion for injecting, and completes to sacrifice oxidation, metal contact process, surface passivation technology with
And metal interconnection process, and form final metal electrode.
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| CN110047913A (en) * | 2018-07-11 | 2019-07-23 | 北京优捷敏半导体技术有限公司 | A kind of gate level turn-off thyristor and its manufacturing method |
| CN112838084A (en) * | 2021-01-05 | 2021-05-25 | 湖南大学 | SiC GTO and MESFET integrated structure and manufacturing method thereof |
| WO2021197774A1 (en) * | 2020-03-31 | 2021-10-07 | Abb Power Grids Switzerland Ag | Power semiconductor device comprising a thyristor and a bipolar junction transistor |
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| CN110047913A (en) * | 2018-07-11 | 2019-07-23 | 北京优捷敏半导体技术有限公司 | A kind of gate level turn-off thyristor and its manufacturing method |
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| US11705510B2 (en) | 2018-07-11 | 2023-07-18 | Hangzhou Ug Min Semiconductor Technology Co. Ltd | Gate-turn-off thyristor and manufacturing method thereof |
| WO2021197774A1 (en) * | 2020-03-31 | 2021-10-07 | Abb Power Grids Switzerland Ag | Power semiconductor device comprising a thyristor and a bipolar junction transistor |
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| JP7432098B2 (en) | 2020-03-31 | 2024-02-16 | ヒタチ・エナジー・リミテッド | Power semiconductor devices with thyristors and bipolar junction transistors |
| CN112838084A (en) * | 2021-01-05 | 2021-05-25 | 湖南大学 | SiC GTO and MESFET integrated structure and manufacturing method thereof |
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