CN106847728A - The inspection method of contact hole manufacture craft defect - Google Patents
The inspection method of contact hole manufacture craft defect Download PDFInfo
- Publication number
- CN106847728A CN106847728A CN201710225130.9A CN201710225130A CN106847728A CN 106847728 A CN106847728 A CN 106847728A CN 201710225130 A CN201710225130 A CN 201710225130A CN 106847728 A CN106847728 A CN 106847728A
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- Prior art keywords
- contact hole
- shared
- polysilicon
- row
- inspection method
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/646—Specific applications or type of materials flaws, defects
Abstract
The present invention provides a kind of inspection method of contact hole manufacture craft defect, a test structure is made using identical contact hole manufacture craft in the prior art, shared contact hole in the test structure in PMOS structures is adjacent with the shared contact hole in adjacent NMOS structures so that form not equipotential in the shared contact hole of equipotential two row originally.Then metal bolt is formed to deposited metal in all of contact hole, electron beam scanning finally is carried out to said structure, so as to observe the brightness case of each contact hole under ESEM.
Description
Technical field
The present invention relates to photoetching process defects detection field, the more particularly to inspection method of contact hole manufacture craft defect.
Background technology
As the development of integrated circuit technology, semiconductor processing dimensions are less and less, also become increasingly complex.Many techniques are whole
The process window of conjunction is less and less, such as the short circuit problem of contact hole and polysilicon, and it is subject to alignment precision and contact hole and many
The influence of crystal silicon critical size etc., is one of difficulties of below 28nm research and development techniques.
As shown in figure 1, in 28nm developments, using existing contact hole manufacture craft, in the product of formation, wafer side
Edge is subject to the serious problem of second breakdown failure, and its prediction failure analysis (PFA) result is shown as shared contact hole and polycrystalline
Silicon short circuit problem, as shown in Fig. 1 and Fig. 2 contrasts, Fig. 1 is the stereoscan photograph that shared contact hole and polysilicon are short-circuited,
Fig. 2 is the stereoscan photograph that shared contact hole is not short-circuited with polysilicon.However, being directed to this electrical property failure problem, light
Learn inspection carries out on-line monitoring without enough precision, while Fig. 3 is refer to, because shared contact hole 01 is in conventional single body pipe
In DRAM (dynamic RAM) structure, its one end can be connected with polysilicon 02, when its other end and another polysilicon
When short-circuit, the change of current potential is not had, that is to say, that both current potentials are identical, so the monitoring of electrical defect cannot be carried out to it.
The content of the invention
The present invention proposes a kind of inspection method of contact hole manufacture craft defect, for checking that existing contact hole makes
Technique whether there is the defect for easily making the shared contact hole to be formed be short-circuited with polysilicon, so as to solve the above problems.
To reach above-mentioned purpose, the present invention provides a kind of inspection method of contact hole manufacture craft defect, is connect for checking
Contact hole manufacture craft formed shared contact hole whether with polysilicon short, comprise the following steps：
Step one：A kind of test structure is provided, is formed with the test structure using the contact hole manufacture craft shape
Into contact hole and polysilicon, the contact hole is divided into several columns shared contact hole and the unshared contact hole of several columns, wherein two
The shared contact hole of row is adjacent and current potential is different, each shared contact hole all one end and the polysilicon contact, and the polysilicon is long
Degree direction is defined as row, and the row is mutually perpendicular in the horizontal plane with the row, and deposited metal is formed in all of contact hole
Metal bolt；
Step 2：Structure to step one carries out electron beam scanning, observes the brightness of each contact hole, according to each contact
The brightness in hole, judges whether each described shared contact hole has short circuit phenomenon with polysilicon.
Preferably, in the test structure in the adjacent shared contact hole of two row, a row are located in PMOS structures, another
Row are located in NMOS structures.
Preferably, the method that test structure is made in step one is when contact hole is made, change mask graph.
Preferably, step one is in lithography contact hole, mask plate is translated into a row contact hole, be lithographically formed PMOS structures
On shared contact hole it is adjacent with the shared contact hole in adjacent NMOS structures.
Preferably, making the method for test structure in step one to change ion implanting structure.
Preferably, the method for changing ion implanting structure is that a row of the selection in originally for NMOS structures are unshared connecing
Contact hole and the original shared contact hole of a row in PMOS structures carry out ion implanting and form PMOS structures, remainder carry out from
Son injection forms NMOS structures.
Preferably, in step 2, during using electron beam scanning, on polysilicon length direction, being sent out with shared contact hole
All shared contact hole brightness are identical in the polysilicon length range of raw short circuit phenomenon.
Compared with prior art, the beneficial effects of the invention are as follows：The present invention provides a kind of contact hole manufacture craft defect
Inspection method, a test structure, PMOS in the test structure are made using identical contact hole manufacture craft in the prior art
Shared contact hole in structure is adjacent with the shared contact hole in adjacent NMOS structures so that originally in equipotential two row
Shared contact hole forms not equipotential.Then metal bolt is formed to deposited metal in all of contact hole, finally to said structure
Electron beam scanning is carried out, so as to observe the brightness case of each contact hole under ESEM.
Usually, if beam scanning pattern is positive potential, on polysilicon length direction, there is short circuit with shared contact hole
All of shared contact hole is all lighted in the length range of this polysilicon of defect；Similarly, if beam scanning pattern is negative
Potential, then phenomenon contrary to the above can be presented, that is, has institute on this polysilicon of circuit defect with shared contact hole
The shared contact hole having is all dim, therefore according to the number in above-mentioned phenomenon with the shared contact hole of polysilicon short, can sentence
Break this contact hole manufacture craft whether there is larger defective workmanship, solve cannot check in the prior art polysilicon with
Between shared contact hole whether the problem of short circuit.
Brief description of the drawings
Fig. 1 is the stereoscan photograph that shared contact hole and polysilicon are short-circuited in the prior art；
Fig. 2 is the stereoscan photograph that shared contact hole and polysilicon are short-circuited in the prior art；
Fig. 3 is conventional structure of the prior art；
Fig. 4 is the test structure schematic diagram that the embodiment of the present invention one is provided；
Fig. 5 is the sectional view without circuit defect that the embodiment of the present invention one is provided；
Fig. 6 is the sectional view for having circuit defect that the embodiment of the present invention one is provided；
Fig. 7 is the structural representation of short circuit between the polysilicon that the embodiment of the present invention one is provided and shared contact hole；
Fig. 8 is the test structure schematic diagram that the embodiment of the present invention two is provided；
Fig. 9 is the structural representation of short circuit between the polysilicon that the embodiment of the present invention two is provided and shared contact hole.
In Fig. 1-Fig. 3：01- shares contact hole, 02- polysilicons；
In Fig. 4-Fig. 9：It is active that 10- contact holes, 11- share contact hole, the unshared contact holes of 12-, 20- polysilicons, 30-
Area.
Specific embodiment
To enable the above objects, features and advantages of the present invention more obvious understandable, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
Embodiment one
The present invention provides a kind of inspection method of contact hole manufacture craft defect, and contact hole manufacture craft is used for checking
Formed shared contact hole whether with polysilicon short, comprise the following steps：
Step one：A kind of test structure is provided, Fig. 4 is refer to, contact hole 10 is formed with the test structure, it is described to connect
10 points of contact hole is shared contact hole 11 and unshared contact hole 12, and one end of each shared contact hole 11 all connects with polysilicon 20
Touch, the test structure has the characteristics that：As shown in figure 4, the shared contact hole 11 in PMOS structures is tied with adjacent NMOS
Shared contact hole 11 on structure is adjacent, that is to say, that between the adjacent shared contact hole 11 of two row, current potential is unequal, in each row
In shared contact hole 11, shared contact hole 11 midfeather, the one unshared contact hole 12 of each two, three has positioned at same
In source region 30.
In the present embodiment, the method for obtaining said structure is, in lithography contact hole 10, to translate for lithography contact hole
10 mask, in the row direction, translates the distance of a row contact hole 10, and conventional structure of the prior art in comparison diagram 3 is conventional
There are two row to share contact hole 11 in structure in PMOS, there are the three unshared contact holes 12 of row in NMOS structures, and we need by
Into Fig. 4, in Fig. 4, left column is unshared contact hole 12 in PMOS structures, and the right side is classified as shared contact hole 11 for structural change in Fig. 3,
And it is shared contact hole 11 that NMOS structures become left column, right two row are all unshared contact hole 12, that is to say, that PMOS structures
On shared contact hole 11 it is adjacent with the shared contact hole 11 in NMOS structures.
Fig. 4 is continued referring to, the shared contact hole 11 of a row in PMOS structures, its one end is all contacted with polysilicon 20, and
By the UNICOM of active area 30 where polysilicon 20 and the unshared contact hole 11 of left column.And the shared contact of a row in NMOS structures
Hole 11, its one end is also all contacted with polysilicon 20, but every polysilicon 20 all connects the unshared contact hole 12 of a Ge Bu UNICOMs.
The purpose for providing this test structure is that the shared row of contact hole 11 1 of two row are arranged in PMOS structures, and another row are arranged on
In NMOS structures, so that the current potential of the shared contact hole 11 of two row is no longer identical, facilitates follow-up inspection.
Metal bolt is formed to deposited metal in above-mentioned all of contact hole 10.
Step 2：Structure to step one carries out electron beam scanning, observes the brightness of each contact hole 10, is connect according to each
The brightness of contact hole 10, judges whether each described shared contact hole 11 has short circuit phenomenon with polysilicon 20.
Specifically, when beam scanning pattern is positive potential, if contact hole 11 is shared in the structure not having with polysilicon 20
Have short circuit phenomenon, it may appear that as in Fig. 5 dotted line frames, shared contact hole 11 of PMOS that row is lighted, NMOS that row it is shared
Contact hole 11 is dim, and its principle is as shown in Figure 6, that is to say, that on the length direction of polysilicon 20, it should be have side to share
Contact hole 11 and the UNICOM of polysilicon 20, the structure of the shared contact hole 11 of opposite side and polysilicon 20 not UNICOM, that is to say, that the party
Upwards, in the length range of polysilicon 20, a shared contact hole 11 is lighted, and another shared contact hole 11 is dim, and dim is total to
The all shared contact hole 11 on column direction where enjoying contact hole 11 is identical with its structure, also neither with this polysilicon 20
Logical therefore also all dim, the shared contact hole 11 of that row where the shared contact hole 11 for similarly lighting all is lighted.
If but occur in that shared contact hole 11 there occurs that one end contacts with polysilicon 20 in the structure, the other end again and polycrystalline
The phenomenon of the short circuit of silicon 20, it may appear that phenomenon as shown in Figure 7.Because, if there occurs the phenomenon with the short circuit of polysilicon 20, this
Should not the shared contact hole 11 of UNICOM turned on by polysilicon 20, inside has electronics to flow, comparison diagram 4, then this can occur
Shared contact hole 11 that should be dim is lighted, and is observed under ESEM, and the shared contact hole 11 that this is lighted is in row dimness
It is easier to observe in shared contact hole 11.
When the scan pattern of electron beam is negative potential, then the phenomenon opposite with above-mentioned phenomenon, namely positive potential occurs
The contact hole 10 lighted in scan pattern is dim in negative potential sweep pattern, dim contact hole 10 in positive potential scan pattern
Lighted in positive potential scan pattern, then similarly, occur the shared contact hole 11 of circuit defect in Fig. 7 then under ESEM
It is dimness, the row remaining shared contact holes 11 for circuit defect do not occur should be lighted.
Occur the number of the shared contact hole 11 of defect in the shared contact hole 11 for calculating each row, thus judge the contact
Whether hole manufacture craft is up to standard.
Embodiment two
The present embodiment is that test structure is different in step one from the difference of embodiment one, test structure in the present embodiment
Preparation method is to carry out NMOS/PWELL moulds to the shared contact hole 11 of a row for being used to make PMOS structures in script conventional structure
The ion implanting of formula, the unshared contact hole 12 of row to being used to make NMOS structures in script conventional structure carries out NMOS/
The ion implanting of PWELL patterns, forms structure as shown in Figure 8, the shared contact hole in the structure in NMOS structures 11
In the right row near PMOS structures, the row of the left side two are all unshared contact hole 12, and PMOS structures left column is shared contact hole 11,
The right side is classified as unshared contact hole 12.It is equipotential feelings so relative to the shared contact hole 11 of two row in the conventional structure of script
Condition, the shared contact hole 11 of two row is in not equipotential situation in test structure now, facilitates subsequent examination.
The same metal deposit that carried out to above-mentioned all of contact hole 10 forms metal bolt, then carries out electron beam scanning.
In the case where beam scanning pattern is positive potential, if the shared contact hole 11 of the structure and without exception, can
Present shown in Fig. 8, i.e., the adjacent shared contact hole 11 of two row a, row are dim, and a row are lighted.If there is shared contact in the structure
Hole 11 and the phenomenon of the short circuit of polysilicon 20, then occur the phenomenon as shown in Fig. 9 dotted line frames, and a row that should be dim share contact
The shared contact hole 11 for having circuit defect in hole 11 is lighted, and is easier to observe under ESEM.
Similarly, if beam scanning pattern is negative potential, there is the phenomenon opposite with positive potential situation, do not go to live in the household of one's in-laws on getting married herein
State.
The present invention provides a kind of inspection method of contact hole manufacture craft defect, uses identical contact hole in the prior art
Manufacture craft makes a test structure, shared contact hole 11 and adjacent NMOS structures in the test structure in PMOS structures
On shared contact hole 11 it is adjacent so that form not equipotential in the equipotential two shared contact holes 11 of row originally, it is then right
Deposited metal forms metal bolt in all of contact hole 10, finally carries out electron beam scanning to said structure, so as in scanning electricity
The brightness case of Microscopic observation each contact hole 10.
According to be calculated with the shared contact hole 11 of polysilicon short number, it can be determined that this contact hole makes work
Skill whether there is larger defective workmanship, and solving cannot check between polysilicon 20 and shared contact hole 11 in the prior art
Whether short circuit problem.
The present invention is described to above-described embodiment, but the present invention is not limited only to above-described embodiment.Obvious this area
Technical staff can carry out various changes and modification to invention without departing from the spirit and scope of the present invention.So, if this hair
These bright modifications and modification belong within the scope of the claims in the present invention and its equivalent technologies, then the present invention is also intended to include
Including these changes and modification.
Claims (7)
1. a kind of inspection method of contact hole manufacture craft defect, for checking the shared contact hole that contact hole manufacture craft is formed
Whether with polysilicon short, it is characterised in that comprise the following steps：
Step one：One test structure is provided, is formed with the test structure and is used connecing that the contact hole manufacture craft is formed
Contact hole and polysilicon, the contact hole are divided into several columns shared contact hole and the unshared contact hole of several columns, wherein two row are shared
Contact hole is adjacent and current potential is different, each shared contact hole all one end and the polysilicon contact, the polysilicon length direction
Row is defined as, the row is mutually perpendicular in the horizontal plane with the row, and deposited metal forms metal bolt in all of contact hole；
Step 2：Structure to step one carries out electron beam scanning, the brightness of each contact hole is observed, according to each contact hole
Brightness, judges whether each described shared contact hole has short circuit phenomenon with polysilicon.
2. the inspection method of contact hole and polysilicon short defect is shared as claimed in claim 1, it is characterised in that the survey
In examination structure in the adjacent shared contact hole of two row, a row are located in PMOS structures, and another row are located in NMOS structures.
3. the inspection method of contact hole and polysilicon short defect is shared as claimed in claim 1, it is characterised in that step one
The middle method for making test structure is, when contact hole is made, to change mask graph.
4. the inspection method of contact hole and polysilicon short defect is shared as claimed in claim 3, it is characterised in that step one
In lithography contact hole, mask plate is translated into a row contact hole, be lithographically formed shared contact hole in PMOS structures with it is adjacent
Shared contact hole in NMOS structures is adjacent.
5. the inspection method of contact hole and polysilicon short defect is shared as claimed in claim 1, it is characterised in that step one
The middle method for making test structure is change ion implanting structure.
6. the inspection method of contact hole as claimed in claim 5 shared and polysilicon short defect, it is characterised in that change from
The method of sub- injecting structure is selection in being originally NMOS structures arranges unshared contact hole and is originally PMOS structures
A shared contact hole of row carry out ion implanting and form PMOS structures, remainder carries out ion implanting and forms NMOS structures.
7. the inspection method of contact hole and polysilicon short defect is shared as claimed in claim 1, it is characterised in that step 2
In, during using electron beam scanning, on polysilicon length direction, the polysilicon length model of the phenomenon that is short-circuited with shared contact hole
Enclose interior all shared contact hole brightness identical.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710225130.9A CN106847728B (en) | 2017-04-07 | 2017-04-07 | The inspection method of contact hole manufacture craft defect |
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| CN201710225130.9A CN106847728B (en) | 2017-04-07 | 2017-04-07 | The inspection method of contact hole manufacture craft defect |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109817538A (en) * | 2019-01-22 | 2019-05-28 | 上海华虹宏力半导体制造有限公司 | SRAM failure on-line testing method |
| CN111668191A (en) * | 2019-03-08 | 2020-09-15 | 华邦电子股份有限公司 | Semiconductor structure, manufacturing method thereof and short circuit detection method |
| CN112017983A (en) * | 2020-07-28 | 2020-12-01 | 中国科学院微电子研究所 | Detection method of contact hole and processing method of semiconductor product |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040058535A1 (en) * | 2002-07-18 | 2004-03-25 | Tetsuya Matsutani | Manufacturing method for an electronic device, and the electronic device |
| CN101930905A (en) * | 2009-06-23 | 2010-12-29 | 联华电子股份有限公司 | Detection structure and on-line wafer monitoring method |
| CN103346103A (en) * | 2013-06-27 | 2013-10-09 | 上海华力微电子有限公司 | Method for detecting alignment degree between polycrystalline silicon grid and contact hole |
| CN103354211A (en) * | 2013-06-25 | 2013-10-16 | 上海华力微电子有限公司 | Method for measuring and calculating alignment deviation of contact holes and polycrystalline silicon gates |
| CN106531724A (en) * | 2016-11-30 | 2017-03-22 | 上海华力微电子有限公司 | Test structure and test method |
-
2017
- 2017-04-07 CN CN201710225130.9A patent/CN106847728B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040058535A1 (en) * | 2002-07-18 | 2004-03-25 | Tetsuya Matsutani | Manufacturing method for an electronic device, and the electronic device |
| CN101930905A (en) * | 2009-06-23 | 2010-12-29 | 联华电子股份有限公司 | Detection structure and on-line wafer monitoring method |
| CN103354211A (en) * | 2013-06-25 | 2013-10-16 | 上海华力微电子有限公司 | Method for measuring and calculating alignment deviation of contact holes and polycrystalline silicon gates |
| CN103346103A (en) * | 2013-06-27 | 2013-10-09 | 上海华力微电子有限公司 | Method for detecting alignment degree between polycrystalline silicon grid and contact hole |
| CN106531724A (en) * | 2016-11-30 | 2017-03-22 | 上海华力微电子有限公司 | Test structure and test method |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109817538A (en) * | 2019-01-22 | 2019-05-28 | 上海华虹宏力半导体制造有限公司 | SRAM failure on-line testing method |
| CN111668191A (en) * | 2019-03-08 | 2020-09-15 | 华邦电子股份有限公司 | Semiconductor structure, manufacturing method thereof and short circuit detection method |
| CN111668191B (en) * | 2019-03-08 | 2023-03-24 | 华邦电子股份有限公司 | Semiconductor structure, manufacturing method thereof and short circuit detection method |
| US11688651B2 (en) | 2019-03-08 | 2023-06-27 | Winbond Electronics Corp. | Semiconductor structure, manufacturing method thereof and method for detecting short thereof |
| CN112017983A (en) * | 2020-07-28 | 2020-12-01 | 中国科学院微电子研究所 | Detection method of contact hole and processing method of semiconductor product |
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| CN106847728B (en) | 2019-08-23 |
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