CN106803754B - Grid protection plate for gate protection - Google Patents
Grid protection plate for gate protection Download PDFInfo
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- CN106803754B CN106803754B CN201710086691.5A CN201710086691A CN106803754B CN 106803754 B CN106803754 B CN 106803754B CN 201710086691 A CN201710086691 A CN 201710086691A CN 106803754 B CN106803754 B CN 106803754B
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- igbt
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- gate
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08112—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in bipolar transistor switches
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/38—Means for preventing simultaneous conduction of switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08116—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in composite switches
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0054—Gating switches, e.g. pass gates
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention discloses a gate protection plate for gate protection, which comprises a port D-Gon and a port D-E, wherein the port D-Gon is connected with a driving plate to output driving pulse signals, the port IGBT-G is connected with an IGBT gate, and the port IGBT-E is connected with an IGBT emitter; and a gate driving resistor connected between the port D-Gon and the port IGBT-G, and a source driving resistor connected between the port D-E and the port IGBT-E; and the IGBT on pressure relief circuit and the IGBT off pressure relief circuit are connected between the port IGBT-G and the port IGBT-E. According to the invention, by adding a part of circuits, the energy during switching on and switching off is absorbed and discharged, so that the resistance of the driving resistor is reduced in design, and the IGBT loss is reduced; when the IGBT works normally, the gate voltage can be stabilized at about 16V, and the long-term running performance and the service life of the IGBT are ensured.
Description
Technical Field
The invention relates to a high-voltage frequency converter, in particular to a grid protection plate for protecting IGBT gates of the high-voltage frequency converter and the MMC frequency converter.
Background
The power units are main components of a main loop of the high-voltage frequency converter which uses power electronic devices for rectification, filtering and inversion, each power unit is equivalent to an alternating-direct-alternating voltage type single-phase low-voltage frequency converter, the core devices used by the power units at present are IGBTs, and the design of a driving circuit is core for how well driving the IGBTs.
The gate protection plate adopted by the high-voltage frequency converter in the industry at present is simpler (as shown in figure 1), when the IGBT works, the transient surge is mainly absorbed by a TVS tube (D2), but sometimes the TVS tube cannot absorb the energy of the surge, the voltage peak of Vge is very high on the waveform, and when in load operation, the Vge is sometimes more than 20V; when a short circuit experiment is carried out, the Vge value directly exceeds 20V, so that the IGBT is in a dangerous working state and can be exploded at any time; therefore, the existing grid protection plate can enable the frequency converter to operate, but the long-term operation performance and the long-term service life of the frequency converter are not guaranteed.
When the IGBT is normally turned on, the gate voltage is restrained below +20V through a TVS tube, according to test discovery, the gate voltage can be restrained from exceeding 20V in no-load time, but the situation that the gate voltage exceeds 20V can occur in loaded time, and the IGBT has the risk of failure at any time; when the IGBT is turned off, in order to avoid too high turn-on threshold level, under the existing circuit, the resistance value of the gate resistance and the capacitance value of the gate capacitance can only be increased, and redundant energy in the turn-off process of the IGBT is absorbed and consumed, but the loss of the IGBT in normal operation is increased.
Disclosure of Invention
In order to solve the above technical problems, an object of the present invention is to provide a gate protection plate for gate protection.
The technical scheme adopted by the invention is as follows:
a gate protection plate for gate protection includes
The port D-Gon and the port D-E are connected with the port D-Gon and the port D-E, the port IGBT-G is connected with the IGBT grid electrode, and the port IGBT-E is connected with the IGBT jet level; and
a gate driving resistor connected between the port D-Gon and the port IGBT-G, and a source driving resistor connected between the port D-E and the port IGBT-E;
an IGBT on pressure relief circuit (10) and an IGBT off pressure relief circuit (20) are connected between the port IGBT-G and the port IGBT-E.
Further, the IGBT conducting pressure relief circuit (10) comprises an NPN triode Q4, a voltage stabilizing diode D5, an absorption capacitor C10, a pressure relief resistor R25 and a diode D8, wherein the collector electrode of the triode Q4 is connected with the port IGBT-G, the voltage stabilizing diode D5 is connected between the collector electrode and the base electrode of the triode Q4, the absorption capacitor C10 is connected between the emitter electrode of the triode Q4 and the port IGBT-E, and the pressure relief resistor R25 and the diode D8 are sequentially connected in series between the emitter electrode of the triode Q4 and the port D-Gon.
In addition, a capacitor C8 and a resistor R18 which are connected in parallel are connected between the base electrode of the triode Q4 and the port IGBT-E.
Further, the IGBT turn-off pressure relief circuit (20) comprises a PNP type triode Q3, a diode D10, an absorption capacitor C9, a pressure relief resistor R21 and a diode D7, wherein an emitter of the triode Q3 is connected with the port IGBT-G, the diode D10 is connected between a base electrode of the triode Q3 and the port D-Gon, the absorption capacitor C9 is connected between a collector electrode of the triode Q3 and the port IGBT-E, and the pressure relief resistor R21 and the diode D7 are sequentially connected in series between the collector electrode of the triode Q3 and the port D-Gon.
A capacitor C7 and a resistor R19 which are connected in parallel are connected between the base electrode of the triode Q3 and the port IGBT-E.
Further, the gate driving resistor is formed by connecting a resistor R14 and a resistor R15 in parallel, and the source driving resistor is formed by connecting a resistor R24 and a resistor R20 in parallel.
Further, a resistor R17 is connected between the port IGBT-G and the port IGBT-E.
The invention has the beneficial effects that:
(1) by adding a part of circuits, the energy during switching on and switching off is absorbed and discharged, so that the resistance of the driving resistor is reduced in design, and the IGBT loss is reduced;
(2) when the IGBT works normally, the gate voltage can be stabilized at about 16V, so that the long-term running performance and the service life of the IGBT are ensured;
(3) when the external output is short-circuited, the gate voltage can be stabilized and IGBT failure is avoided under the condition that the circuit is not cut off at the moment of the short circuit to play a role in protection.
(4) When the IGBT is prevented from being turned off, the gate signals of the upper pipe and the lower pipe are high at the same time, and the upper pipe and the lower pipe are turned on at the same time, so that the IGBT is directly connected.
Drawings
The following describes the embodiments of the present invention further with reference to the drawings.
Fig. 1 is a circuit diagram of a conventional gate protection plate;
fig. 2 is a circuit diagram of the gate protection plate of the present invention.
Detailed Description
As shown in FIG. 2, a gate protection plate for gate protection of the present invention comprises
The port D-Gon and the port D-E are connected with the port D-Gon and the port D-E, the port IGBT-G is connected with the IGBT grid electrode, and the port IGBT-E is connected with the IGBT jet level; and
a gate driving resistor connected between the port D-Gon and the port IGBT-G, and a source driving resistor connected between the port D-E and the port IGBT-E;
an IGBT on-state pressure release circuit 10 and an IGBT off-state pressure release circuit 20 are connected between the port IGBT-G and the port IGBT-E.
As shown in fig. 2, the IGBT turn-on pressure release circuit 10 includes an NPN transistor Q4, a zener diode D5, an absorption capacitor C10, a pressure release resistor R25, and a diode D8, wherein the collector of the transistor Q4 is connected to the port IGBT-G, the zener diode D5 is connected between the collector and the base of the transistor Q4, the absorption capacitor C10 is connected between the emitter of the transistor Q4 and the port IGBT-E, and the pressure release resistor R25 and the diode D8 are sequentially connected in series between the emitter of the transistor Q4 and the port D-Gon. In addition, a capacitor C8 and a resistor R18 which are connected in parallel are connected between the base electrode of the triode Q4 and the port IGBT-E.
Correspondingly, the IGBT turn-off pressure relief circuit 20 includes a PNP type triode Q3, a diode D10, an absorption capacitor C9, a pressure relief resistor R21, and a diode D7, where an emitter of the triode Q3 is connected to the port IGBT-G, the diode D10 is connected between a base of the triode Q3 and the port D-Gon, the absorption capacitor C9 is connected between a collector of the triode Q3 and the port IGBT-E, and the pressure relief resistor R21 and the diode D7 are sequentially connected in series between the collector of the triode Q3 and the port D-Gon. A capacitor C7 and a resistor R19 which are connected in parallel are connected between the base electrode of the triode Q3 and the port IGBT-E.
As a matched circuit element in the technical scheme, the grid driving resistor is formed by connecting a resistor R14 and a resistor R15 in parallel, the source driving resistor is formed by connecting a resistor R24 and a resistor R20 in parallel, and a resistor R17 is connected between a port IGBT-G and a port IGBT-E. Resistor R26 is connected in parallel with resistor R25 to match different power levels, and similarly resistor R21 is connected in parallel with resistor R22 to match different power levels.
The main conception of the invention is that the maximum value of the voltage threshold value under the condition that the IGBT is normally opened is not more than 18V, the voltage threshold value which is suddenly opened under the condition that the IGBT is closed is not more than 0V, and the main principle design condition is as follows:
(1) limiting voltage in the IGBT turn-on process is not more than 18V:
the main functional circuit is composed of D5, Q4, C10, R25 and D8 (as part 10 in FIG. 2), wherein D5 is an 18V zener diode, when the threshold value of IGBT on exceeds 18V, the C pole and E pole of triode Q4 are conducted, and current reaches capacitor C10 from the C pole and E pole, so that C10 absorbs redundant energy; when the IGBT is turned off, the energy can be discharged through D8 and R25, and finally the maximum value of the positive gate voltage is limited below +18V.
(2) The threshold value of the on level suddenly appearing in the IGBT turn-off process is not more than 0V:
the main functional circuit is composed of Q3, C9, R21, D7 and D10 (20 parts in FIG. 2), when the IGBT is turned off, if the instantaneous voltage value of the front end of the gate electrode is larger than the voltage value of the front end of the driving resistor (namely, the voltage difference of the 1 point voltage is larger than the 2 point voltage in FIG. 2), the voltage difference of the two is larger than 0.7V, D10 is conducted, the Q3 triode is conducted, current charges the capacitor C9 downwards through the C electrode and the E electrode, and when the capacitor C9 absorbs energy to reach the capacity, the residual energy is consumed by the R21 and the R7, so that the situation that the gate electrode voltage is excessively high when the IGBT is turned off can be avoided, and the risk of direct short circuit in the normal working process of the IGBT is avoided.
The above-mentioned embodiments are merely preferred embodiments of the present invention, and the present invention is not limited to the above-mentioned embodiments, as long as the technical solutions for achieving the objects of the present invention by substantially the same means are all within the scope of the present invention.
Claims (5)
1. A gate protection plate for gate protection, characterized by: the device comprises a port D-Gon and a port D-E which are connected with a driving plate to output driving pulse signals, a port IGBT-G connected with an IGBT grid electrode and a port IGBT-E connected with an IGBT jet level; and
a gate driving resistor connected between the port D-Gon and the port IGBT-G, and a source driving resistor connected between the port D-E and the port IGBT-E;
an IGBT on pressure relief circuit (10) and an IGBT off pressure relief circuit (20) which are connected between the port IGBT-G and the port IGBT-E; the IGBT conducting pressure relief circuit (10) comprises an NPN triode Q4, a voltage stabilizing diode D5, an absorption capacitor C10, a pressure relief resistor R25 and a diode D8, wherein the collector electrode of the triode Q4 is connected with a port IGBT-G, the voltage stabilizing diode D5 is connected between the collector electrode and the base electrode of the triode Q4, the absorption capacitor C10 is connected between the emitter electrode of the triode Q4 and the port IGBT-E, and the pressure relief resistor R25 and the diode D8 are sequentially connected in series between the emitter electrode of the triode Q4 and the port D-Gon; the IGBT turn-off pressure relief circuit (20) comprises a PNP type triode Q3, a diode D10, an absorption capacitor C9, a pressure relief resistor R21 and a diode D7, wherein an emitter of the triode Q3 is connected with a port IGBT-G, the diode D10 is connected between a base electrode of the triode Q3 and the port D-Gon, the absorption capacitor C9 is connected between a collector electrode of the triode Q3 and the port IGBT-E, and the pressure relief resistor R21 and the diode D7 are sequentially connected between the collector electrode of the triode Q3 and the port D-Gon in series.
2. A gate protection plate for gate protection as claimed in claim 1, wherein: a capacitor C8 and a resistor R18 which are connected in parallel are connected between the base electrode of the triode Q4 and the port IGBT-E.
3. A gate protection plate for gate protection as claimed in claim 1, wherein: a capacitor C7 and a resistor R19 which are connected in parallel are connected between the base electrode of the triode Q3 and the port IGBT-E.
4. A gate protection plate for gate protection as claimed in claim 1, wherein: the grid driving resistor is formed by connecting a resistor R14 and a resistor R15 in parallel, and the source driving resistor is formed by connecting a resistor R24 and a resistor R20 in parallel.
5. A gate protection plate for gate protection as claimed in claim 1, wherein: and a resistor R17 is connected between the port IGBT-G and the port IGBT-E.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710086691.5A CN106803754B (en) | 2017-02-17 | 2017-02-17 | Grid protection plate for gate protection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710086691.5A CN106803754B (en) | 2017-02-17 | 2017-02-17 | Grid protection plate for gate protection |
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| Publication Number | Publication Date |
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| CN106803754A CN106803754A (en) | 2017-06-06 |
| CN106803754B true CN106803754B (en) | 2023-05-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710086691.5A Active CN106803754B (en) | 2017-02-17 | 2017-02-17 | Grid protection plate for gate protection |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202435252U (en) * | 2012-01-18 | 2012-09-12 | 宁波奥克斯空调有限公司 | IGBT (Insulate Gate Bipolar Transistor) driving and protection circuit |
| CN105337479A (en) * | 2015-11-24 | 2016-02-17 | 北京赛德高科铁道电气科技有限责任公司 | IGBT-driven grid electrode protection circuit |
| CN105375750A (en) * | 2015-12-17 | 2016-03-02 | 南京工程学院 | Driving protection circuit for preventing bridge arm direct connection |
| CN206584926U (en) * | 2017-02-17 | 2017-10-24 | 广东明阳龙源电力电子有限公司 | A kind of gate protection circuit |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140192449A1 (en) * | 2011-07-14 | 2014-07-10 | Fuji Electric Co., Ltd. | Short-circuit protection circuit |
| US9819339B2 (en) * | 2015-05-13 | 2017-11-14 | Infineon Technologies Austria Ag | Method and circuit for reducing collector-emitter voltage overshoot in an insulated gate bipolar transistor |
-
2017
- 2017-02-17 CN CN201710086691.5A patent/CN106803754B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202435252U (en) * | 2012-01-18 | 2012-09-12 | 宁波奥克斯空调有限公司 | IGBT (Insulate Gate Bipolar Transistor) driving and protection circuit |
| CN105337479A (en) * | 2015-11-24 | 2016-02-17 | 北京赛德高科铁道电气科技有限责任公司 | IGBT-driven grid electrode protection circuit |
| CN105375750A (en) * | 2015-12-17 | 2016-03-02 | 南京工程学院 | Driving protection circuit for preventing bridge arm direct connection |
| CN206584926U (en) * | 2017-02-17 | 2017-10-24 | 广东明阳龙源电力电子有限公司 | A kind of gate protection circuit |
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| CN106803754A (en) | 2017-06-06 |
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