CN106803528A - 基于石墨烯的位置灵敏光探测器 - Google Patents
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- 235000012239 silicon dioxide Nutrition 0.000 abstract description 7
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000005286 illumination Methods 0.000 description 7
- 239000010410 layer Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 231100000289 photo-effect Toxicity 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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Abstract
本发明提供了一种基于石墨烯的位置灵敏探测器，所述的探测器器包括Si/SiO2衬底、设在Si/SiO2衬底上的石墨烯和设在石墨烯上的金属电极；所述的Si/SiO2衬底由底部的Si和Si上方的SiO2组成；所述的Si是轻掺杂Si衬底，其掺杂浓度范围为1014‑1016 cm‑3，电阻率为1‑100Ωcm；所述的SiO2的厚度为50‑500nm；所述的石墨烯是单层、双层或3‑10层的少层石墨烯；所述的金属电极为金、镍或铂。本发明的有益效果如下：基于本发明所获得的基于石墨烯的位置灵敏探测器，可以解决现有位置灵敏探测器探测微弱光的问题。
Description
技术领域
本发明涉及一种基于石墨烯与硅协同作用的位置灵敏光探测器。本发明属光电子器件领域。
背景技术
位置灵敏探测器是基于横向光电效应的一种光学位置探测器，目前已广泛应用于工业，工程，航天和军工领域。现有的位置灵敏光探测器多是基于硅材料，具有良好的分辨率和响应时间，但是其响应度低，探测的光强通常在微瓦级别，不能实现纳瓦级别弱光位置灵敏探测，这在实际应用中受到严重的限制。在实际应用中，检测的光多为反射光，经过长距离的传输和散射，实际探测到的光可能十分微弱。比如在激光制导中，位置灵敏探测组件的最小探测功率（Pmin）直接决定了导引头系统的作用距离，Pmin越小，系统的作用距离就越远。因此，高精度的快速光学位置检测具有重要的应用前景。
石墨烯(graphene)是由碳原子构成的一种新型二维半导体材料，它的高迁移率和宽带吸收使他成为高速光电应用领域最有潜力的候选者。尽管石墨烯是单原子层结构，对光的吸收很弱，但是它可以借助其他光敏材料作为光吸收层，结合自身的高迁移率实现很高的光增益，使其在弱光下能够获得很高的光响应。
基于上述背景，本发明提出一种基于石墨烯与硅协同作用的位置灵敏探测器。
发明内容
本发明提出一种基于石墨烯与硅协同作用的位置灵敏光探测器。以解决现有位置灵敏探测器最小探测极限功率高的问题。
本发明的技术方案如下：
一种基于石墨烯的位置灵敏探测器，所述的探测器器包括Si/SiO2衬底、设在Si/SiO2衬底上的石墨烯和设在石墨烯上的金属电极；
所述的Si/SiO2衬底由底部的Si和Si上方的SiO2组成；
所述的Si是轻掺杂Si衬底，其电阻率为1-100Ωcm；
所述的SiO2的厚度为50-500nm；
所述的石墨烯是单层、双层或3-10层的少层石墨烯；
所述的金属电极为金、镍或铂。
一种基于石墨烯的位置灵敏探测器的制备方法，包括如下步骤：
1）在Si/SiO2衬底上通过微机械剥离法制备石墨烯；
2）通过电子束曝光和金属薄膜沉积技术在石墨烯上沉积两个电极。
本发明的基于石墨烯与硅协同作用的位置灵敏探测器的原理如图1所示，光穿透二氧化硅（SiO2）照在轻掺杂硅（Si）表面，使得硅中产生光生载流子，并在浓度梯度的作用下向四周扩散。若用恒定的光照射，光致载流子将在硅中形成稳定扩散分布，扩散到石墨烯器件区域下方的Si/SiO2界面处的载流子对石墨烯具有电场调制作用，并引起石墨烯沟道电流的变化，即光致电流。由于石墨烯具有很高的迁移率，载流子在两个电极之间的传输时间极短，导致了石墨烯探测器具有很高的增益，即使在弱光下也可以获得可观的光电流。另外，光电流的大小主要是与扩散至石墨烯下方的载流子的浓度或数量有关。根据非平衡载流子扩散理论，扩散至某处的载流子数量与光斑到石墨烯器件的距离是负相关的，这说明在恒定的光照下，光电流与光斑中心到石墨烯器件的距离存在负相关对应关系。所以，该探测器对弱光具有良好的位置灵敏性。
有益效果：基于本发明所获得的基于石墨烯的位置灵敏探测器，可以解决现有位置灵敏探测器探测微弱光的问题。
附图说明
图1是本发明的结构与原理示意图。石墨烯两边是电极。
图2为本发明石墨烯器件的光学显微图片。
图3为本发明400nW，532nm光照下的光电流和光斑到石墨烯器件距离的对应关系图。
图4为本发明400nW，532nm光照下获得的二维位置灵敏性光探测图（石墨烯器件位于坐标原点）。
具体实施方式
本发明中：Si/SiO2衬底制备方法属于常规技术，请参考以下文献：
陈涛，席珍强，杨德仁等，快速热氧化制备二氧化硅薄膜的红外研究，材料处理学报，28,1（2007）
J, T, Wright et al. Thermal oxidation of silicon in a residual oxygenatmosphere—the RESOX process—for self-limiting growth of thin silicondioxide films, Semiconductor Science and Technology, 31 (2016).
本发明中“轻掺杂Si衬底”是指杂质浓度比较低的Si衬底,对应电阻率为1-100Ωcm，其掺杂浓度范围为1014-1016 cm-3。
本发明中：“微机械剥离法”“电子束曝光”和“金属薄膜沉积技术”属于本领域常规技术，请参考以下文献：
F, Xia et al. Ultrafast graphene photodetector, Nature Nanotechnology 4,839 (2009).
实施例1
本实施例的基于石墨烯的位置灵敏光探测器，制备过程如下：
1）在带有轻掺杂Si的Si/SiO2衬底上通过微机械剥离法制备单层石墨烯，Si衬底电阻率为10Ωcm，SiO2厚度为300nm。
2）通过电子束曝光和金属薄膜沉积技术在石墨烯上沉积两个50 nm厚的金电极（图2）。
3）在衬底不同位置光照射得到光电流，对比石墨烯够到处获得的光电流大小，得到光斑的位置信息（图3和图4）。
图3 表示的在400nW光照下，随着光照入射点与石墨烯的距离增加，在石墨烯中检测的光电流越来越小，这说明光电流与距离是相关的，因此我们可以根据测量得到的光电流算出入射点与石墨烯的距离，实现光斑位置的一维探测。
图4表示的是将石墨烯器件固定在原点处，入射点在第一象限内的引起的光响应，这说明该探测器可以用作二维位置探测。
实施例2
本实施例的基于石墨烯的位置灵敏光探测器，制备过程如下：
1）在带有轻掺杂Si的Si/SiO2衬底上通过微机械剥离法制备双层石墨烯，Si衬底电阻率为100Ωcm，SiO2厚度为50nm。
2）通过电子束曝光和金属薄膜沉积技术在石墨烯上沉积两个50 nm厚的金电极。
3）在衬底不同位置光照射得到光电流，对比石墨烯够到处获得的光电流大小，得到光斑的位置信息。
当光照在衬底的不同位置，石墨烯器件的电流会随光照的强度增加而增加，也会随光斑离石墨烯器件距离的增加而减少。利用该原理可以实现衬底上光斑位置的传感。
实施例3
本实施例的基于石墨烯的位置灵敏光探测器，制备过程如下：
1）在带有轻掺杂Si的Si/SiO2衬底上通过微机械剥离法制备3层的石墨烯，Si衬底电阻率为1 Ωcm，SiO2厚度为500nm。
2）通过电子束曝光和金属薄膜沉积技术在石墨烯上沉积两个50 nm厚的金电极。
3）在衬底不同位置光照射得到光电流，对比石墨烯够到处获得的光电流大小，得到光斑的位置信息。
当光照在衬底的不同位置，石墨烯器件的电流会随光照的强度增加而增加，也会随光斑离石墨烯器件距离的增加而减少。利用该原理可以实现衬底上光斑位置的传感。
本发明的基于石墨烯的位置灵敏探测器对纳瓦级别的弱光具有位置灵敏性。本发明所提出的基于石墨烯的位置灵敏探测器，可以实现nW级别的微弱光位置探测。
Claims (2)
1.一种基于石墨烯的位置灵敏探测器，其特征在于，所述的探测器器包括Si/SiO2衬底、设在Si/SiO2衬底上的石墨烯和设在石墨烯上的金属电极；
所述的Si/SiO2衬底由底部的Si和Si上方的SiO2组成；
所述的Si是轻掺杂Si衬底，其电阻率为1-100Ωcm；
所述的SiO2的厚度为50-500nm；
所述的石墨烯是单层、双层或3-10层的少层石墨烯；
所述的金属电极为金、镍或铂。
2.根据权利要求1所述的基于石墨烯的位置灵敏探测器的制备方法，其特征在于，包括如下步骤：
1）在Si/SiO2衬底上通过微机械剥离法制备石墨烯；
2）通过电子束曝光和金属薄膜沉积技术在石墨烯上沉积两个电极。
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107256899A (zh) * | 2017-06-28 | 2017-10-17 | 泰州巨纳新能源有限公司 | 基于石墨烯‑硅异质结的无源位置灵敏探测器 |
| CN107490730A (zh) * | 2017-07-21 | 2017-12-19 | 泰州巨纳新能源有限公司 | 基于石墨烯的探测器作为非接触式静电探测器的应用 |
| CN111106200A (zh) * | 2019-12-31 | 2020-05-05 | 中国科学技术大学 | 一种红外弱光探测器件、其制备方法与应用 |
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| CN107256899A (zh) * | 2017-06-28 | 2017-10-17 | 泰州巨纳新能源有限公司 | 基于石墨烯‑硅异质结的无源位置灵敏探测器 |
| CN107256899B (zh) * | 2017-06-28 | 2019-03-08 | 泰州巨纳新能源有限公司 | 无源位置灵敏探测器、其制备方法及其测量方法 |
| CN107490730A (zh) * | 2017-07-21 | 2017-12-19 | 泰州巨纳新能源有限公司 | 基于石墨烯的探测器作为非接触式静电探测器的应用 |
| CN111106200A (zh) * | 2019-12-31 | 2020-05-05 | 中国科学技术大学 | 一种红外弱光探测器件、其制备方法与应用 |
| CN111106200B (zh) * | 2019-12-31 | 2021-10-01 | 中国科学技术大学 | 一种红外弱光探测器件、其制备方法与应用 |
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