CN106796885A - The manufacture method of electrically conducting transparent distribution and electrically conducting transparent distribution - Google Patents
The manufacture method of electrically conducting transparent distribution and electrically conducting transparent distribution Download PDFInfo
- Publication number
- CN106796885A CN106796885A CN201680002259.7A CN201680002259A CN106796885A CN 106796885 A CN106796885 A CN 106796885A CN 201680002259 A CN201680002259 A CN 201680002259A CN 106796885 A CN106796885 A CN 106796885A
- Authority
- CN
- China
- Prior art keywords
- films
- electrically conducting
- conducting transparent
- conductive oxide
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009826 distribution Methods 0.000 title claims abstract description 82
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000005530 etching Methods 0.000 claims abstract description 60
- 229910001316 Ag alloy Inorganic materials 0.000 claims abstract description 31
- 229910052709 silver Inorganic materials 0.000 claims abstract description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 135
- 235000006408 oxalic acid Nutrition 0.000 claims description 45
- 239000000243 solution Substances 0.000 claims description 34
- 229910052738 indium Inorganic materials 0.000 claims description 24
- 229910052718 tin Inorganic materials 0.000 claims description 24
- 229910052749 magnesium Inorganic materials 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 19
- 239000007864 aqueous solution Substances 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 10
- 238000011112 process operation Methods 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000007792 addition Methods 0.000 description 20
- 239000010949 copper Substances 0.000 description 19
- 239000000758 substrate Substances 0.000 description 17
- 229910052802 copper Inorganic materials 0.000 description 16
- 239000000203 mixture Substances 0.000 description 15
- 230000000007 visual effect Effects 0.000 description 15
- 229910052787 antimony Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 238000005477 sputtering target Methods 0.000 description 10
- 229910052725 zinc Inorganic materials 0.000 description 9
- 239000012298 atmosphere Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000006396 nitration reaction Methods 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 241000282887 Suidae Species 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910018137 Al-Zn Inorganic materials 0.000 description 1
- 229910018573 Al—Zn Inorganic materials 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 102000004895 Lipoproteins Human genes 0.000 description 1
- 108090001030 Lipoproteins Proteins 0.000 description 1
- 229910018725 Sn—Al Inorganic materials 0.000 description 1
- 229910007610 Zn—Sn Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 210000000170 cell membrane Anatomy 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- NIFHFRBCEUSGEE-UHFFFAOYSA-N oxalic acid Chemical compound OC(=O)C(O)=O.OC(=O)C(O)=O NIFHFRBCEUSGEE-UHFFFAOYSA-N 0.000 description 1
- ZDYUUBIMAGBMPY-UHFFFAOYSA-N oxalic acid;hydrate Chemical compound O.OC(=O)C(O)=O ZDYUUBIMAGBMPY-UHFFFAOYSA-N 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The electrically conducting transparent distribution (10) is with the Ag films (11) being made up of Ag or Ag alloys and the transparent conductive oxide film (12) being laminated on the Ag films (11), and Wiring pattern is formed with by etching process, in the electrically conducting transparent distribution (10), in the scope of below 15nm, Ag films (11) are less than 1 μm relative to the overetch amount (L) of transparent conductive oxide film (12) to the thickness (ta) of Ag films (11).
Description
Technical field
The present invention relates to a kind of for example for the electrically conducting transparent distribution and electrically conducting transparent distribution of display or contact panel etc.
Manufacture method.
The application advocate based on patent application 2015-37950 in Japanese publication on 2 27th, 2015,2015 years 11
The moon 5 is in the patent application 2015-217683 of Japanese publication and the patent application in Japanese publication on the 25th in 2 months in 2016
The priority of No. 2016-34768, and its content is applied at this.
Background technology
For example, in liquid crystal display, organic el display, contact panel etc., as distribution, for example, such as patent document 1
Shown in~3, the electrically conducting transparent distribution of the stepped construction for being set to transparent conductive oxide film and metal film is applied.
In the electrically conducting transparent distribution, it is desirable to which the transmissivity (hereinafter referred to as visual perspective rate) of the light of visible region is higher
And resistance is relatively low.
Here, forming Wiring pattern on stacked film of the transparent conductive oxide film with metal film and being set to electrically conducting transparent and match somebody with somebody
During line, as shown in patent document 3~5, treatment typically is etched to above-mentioned stacked film.
In these patent documents 3~5, it is etched as the stacked film to transparent conductive oxide film and metal film
Mode, proposition has the side being etched with two stages using transparent conductive oxide film etching solution and metal film etching solution
Method or the method being etched in the lump to transparent conductive oxide film and metal film using the specific etching solution for constituting.
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2006-216266 publications
Patent document 2：Japanese Unexamined Patent Publication 2012-054006 publications
Patent document 3：Japanese Unexamined Patent Publication 2008-080743 publications
Patent document 4：Japanese Unexamined Patent Publication 2007-007982 publications
Patent document 5：Japanese Unexamined Patent Publication 2009-206462 publications
However, in recent years, the requirement of electrically conducting transparent distribution further improves visual perspective rate, it is therefore desirable to more unfertile land than ever
Form metal film.
Here, when the thickness of metal film is set into relatively thin, there is metal film than transparent in above-mentioned conventional engraving method
Conductive oxide film is preferentially etched and the big problem of the overetch quantitative change of metal film.
Especially, in recent years, due to the miniaturization of distribution, the width of distribution diminishes, if therefore metal film overetch amount it is big
Then it is possible to that electric conductivity cannot be substantially ensured that.
The content of the invention
The present invention be in view of afore-mentioned and complete, its object is to provide a kind of electrically conducting transparent distribution and this transparent is led
The manufacture method of electric distribution, the electrically conducting transparent distribution has visual perspective rate higher, and suppresses the overetch amount of metal film,
Electric conductivity is substantially ensured that.
In order to solve the above problems, electrically conducting transparent distribution of the invention has the Ag films and stacking being made up of Ag or Ag alloys
Transparent conductive oxide film on the Ag films, and Wiring pattern is formed with by etching process, the electrically conducting transparent distribution
It is characterised by, the thickness of the Ag films is below 15nm, overetch of the Ag films relative to the transparent conductive oxide film
Measure is less than 1 μm.
Electrically conducting transparent distribution of the invention, the thickness of the Ag films is below 15nm, therefore visual perspective rate is excellent.
Also, in electrically conducting transparent distribution of the invention, the overetch amount of the Ag films is suppressed to less than 1 μm, therefore
Even if in the case where wiring width is narrower, it is also possible to ensure the width of metal film and reliably ensure that electric conductivity.
Here, in electrically conducting transparent distribution of the invention, preferably described Ag films are made up of the Ag alloys for constituting as follows：To close
It is calculated as more than 0.05 atom % and the scope of below 10.0 atom % includes any one in Sn, In, Mg, Ti or two or more
Element be used as addition element, and remainder is made up of Ag and inevitable impurity.
Electrically conducting transparent distribution according to this composition, Ag films are made up of following Ag alloys：To add up to more than 0.05 atom %
And 10.0 scope below atom % is used as addition unit comprising any one in Sn, In, Mg, Ti or two or more elements
Element, and remainder is made up of Ag and inevitable impurity, therefore, it is possible to improve Ag films relative to substrate and oxidation film
Wetability.Thus, even if film forming is set into below 15nm in the thickness of the Ag films on substrate or on oxidation film, than relatively thin
In the case of, it is also possible to suppress the cohesion of film, and resistance can be reduced and visual perspective rate is improved.
Also, in electrically conducting transparent distribution of the invention, can be made up of the Ag alloys for constituting as follows：It is also former comprising 0.01
Any one or two kinds in the Cu of the Sb of sub- more than % and more than 0.1 atom % are used as addition element, and all additions
Element is added up to below 10.0 atom %, and remainder is made up of Ag and inevitable impurity.
Electrically conducting transparent distribution according to this composition, is made up of the Ag alloys for constituting as follows：Also include more than 0.01 atom %
Sb and more than 0.1 atom % Cu in any one or two kinds be used as addition element, and all addition element conjunction
It is calculated as below 10.0 atom %, and remainder is made up of Ag and inevitable impurity, therefore by adding Sb and Cu, can
Further suppress the cohesion of film, and resistance can be reduced and visual perspective rate is improved.
And, in electrically conducting transparent distribution of the invention, preferably described transparent conductive oxide film is amorphous film.
Electrically conducting transparent distribution according to this composition, transparent conductive oxide film is amorphous film, described later therefore, it is possible to pass through
Oxalic acid etching solution is reliably etched, and can reduce the overetch amount of Ag films.
In the manufacture method of electrically conducting transparent distribution of the invention, the electrically conducting transparent distribution have be made up of Ag or Ag alloys
Ag films and the transparent conductive oxide film that is laminated on the Ag films, and be formed with Wiring pattern, the electrically conducting transparent distribution
Manufacture method is characterised by, the thickness of the Ag films is set into below 15nm, and possessed to Ag films and described
The stacked film of bright conductive oxide film is etched the etching process operation for processing and being formed Wiring pattern, the etching process operation
In, the transparent conductive oxide film and the Ag films are dissolved in the lump using oxalic acid etching solution.
The manufacture method of electrically conducting transparent distribution of the invention, to the Ag films and the transparent conductive oxide
The stacked film of thing film is etched treatment and forms the etching process operation of Wiring pattern, using oxalic acid etching solution to described
Bright conductive oxide film and the Ag films are dissolved in the lump.Generally, oxalic acid etching solution is difficult to the etching of Ag films, but this hair
In bright, the thickness of the Ag films is formed as into below 15nm, than relatively thin, therefore Ag films can be removed by oxalic acid etching solution.Also,
In the oxalic acid etching solution, compared with transparent conductive oxide film, the etching of Ag films is poor, is lost therefore, it is possible to suppress crossing for Ag films
Carve.
Here, in the manufacture method of electrically conducting transparent distribution of the invention, preferably described oxalic acid etching solution is concentration of oxalic acid
Oxalic acid aqueous solution in the scope of more than 3 mass % and below 7 mass %.
The manufacture method of the electrically conducting transparent distribution according to this composition, as the oxalic acid etching solution, using concentration of oxalic acid 3
Oxalic acid aqueous solution in the scope of more than quality % and 7 below mass %, therefore, it is possible to Ag films and transparent conductive oxide film
It is etched in the lump, and can reliably reduces the overetch amount of Ag films.
In accordance with the invention it is possible to provide a kind of with visual perspective rate higher, and suppress the overetch amount of metal film,
Fully ensure that the electrically conducting transparent distribution of electric conductivity and the manufacture method of the electrically conducting transparent distribution.
Brief description of the drawings
Fig. 1 is the enlarged partial sectional view of the electrically conducting transparent distribution of embodiments of the present invention.
Fig. 2 is the amplification view of the etched facet of the electrically conducting transparent distribution of embodiments of the present invention.
Fig. 3 is the figure of the example for representing the X-ray diffraction measure for carrying out transparent conductive oxide film.
Fig. 4 is the flow chart of the manufacture method of the electrically conducting transparent distribution for representing embodiments of the present invention.
Fig. 5 is the enlarged partial sectional view of the electrically conducting transparent distribution of another embodiment of the present invention.
Specific embodiment
Hereinafter, refer to the attached drawing is to the electrically conducting transparent distribution of embodiments of the present invention and the manufacture method of electrically conducting transparent distribution
Illustrate.
Electrically conducting transparent distribution 10 in present embodiment is used in various displays and contact panel.
As shown in figure 1, the electrically conducting transparent distribution 10 of present embodiment for example possesses Ag films 11 and transparent conductive oxide film
12, the film forming of Ag films 11 in the one side of substrate 30, the transparent conductive oxide film 12 in an overlapping manner film forming in this
On Ag films 11.In addition, as substrate 30, it is possible to use glass substrate or PET film of alkali-free glass, pyrex etc. etc. are set
Membrane of lipoprotein.
The electrically conducting transparent distribution 10 is etched by the stacked film with Ag films 11 and transparent conductive oxide film 12
Process to form Wiring pattern.
Also, in the electrically conducting transparent distribution 10, Ag films 11 are 1 μ relative to the overetch amount L of transparent conductive oxide film 12
Below m.Specifically, as shown in Fig. 2 during the distribution of the etched treatment of cross-section, the end face of transparent conductive oxide film 12
The distance of the 12e and end face 11e of Ag films 11 is less than 1 μm.Overetch amount L of the Ag films 11 relative to transparent conductive oxide film 12
More preferably less than 0.8 μm.
Also, in the electrically conducting transparent distribution 10, the thickness ta of Ag films 11 is in more than 3nm and the scope of below 15nm.
And, the thickness to of transparent conductive oxide film 12 is in more than 5nm and the scope of below 80nm.
In addition, in present embodiment, the width of electrically conducting transparent distribution 10 is set in the scope of more than 10 μm and less than 100 μm
It is interior.
Here, Ag films 11 are made up of pure Ag or Ag alloys.In present embodiment, Ag alloys are by the Ag alloy structures that constitute as follows
Into：To add up to it is more than 0.05 atom % and below 10.0 atom % scope comprising any one in Sn, In, Mg, Ti or
Two or more elements is used as addition element, and remainder is made up of Ag and inevitable impurity.In addition, conduct can not
The impurity for avoiding, for example, can enumerate Fe, Pb, Bi, Al, Zn of below 500ppm etc..
Here, illustrating the reasons why below in relation to the content of the addition element of regulation Ag alloys as described above.
Contained Sn, In, Mg, Ti are the effect effect with the wetability for improving Ag films 11 in the Ag alloys of composition Ag films 11
The element of fruit.Also, Sn, In, Mg, Ti have the work for further improving Ag films 11 and the adhesiveness of transparent conductive oxide film 12
Use effect.
Here, any one or the two or more elements in Sn, In, Mg, Ti add up to the feelings less than 0.05 atom %
Under condition, it is possible to cannot fully play above-mentioned action effect.On the other hand, Sn, In, Mg, Ti are the unit that resistance is substantially improved
Element, therefore it is possible to electricity if any one in Sn, In, Mg, Ti or two or more elements are total more than 10.0 atom %
Resistive is high and declines electric conductivity.
According to this reason, in present embodiment, will add up to as the content of Sn, In, Mg, Ti of addition element regulation
For in the scope of more than 0.05 atom % and below 10.0 atom %.The content of Sn, In, Mg, Ti be more preferably 0.1 atom % with
The scope of upper and below 5.0 atom %.
In addition, in the Ag alloys of composition Ag films 11, addition element further can be used as containing Sb and Cu.
Sb, Cu are the element with following action effect, i.e., visual perspective rate need not be greatly reduced and need not be substantially improved
Resistance can suppress the Ag cohesions of Ag films 11 and further improve environment resistant.Here, in Sb less than 0.01 atom %, Cu is less than
In the case of 0.1 atom %, it is possible to cannot fully play above-mentioned action effect.According to this reason, present embodiment
In, addition Sb when the content of Sb is set as more than 0.01 atom %, addition Cu when by the content of Cu be set as 0.1 atom % with
On.
On the other hand, Sb and Cu are the element that resistance is substantially improved in the same manner as Sn, In, Mg, Ti.Therefore, this embodiment party
In formula, during addition Sb and Cu, 10 atom % will be set as the total of the content of Sn, In, Mg, Ti, Sb, Cu of addition element
Below.Total more preferably below 7.0 atom % of the content of Sn, In, Mg, Ti, Sb, Cu.
The transparent conductive oxide for constituting transparent conductive oxide film 12 is In-Sn oxides (ITO), Al-Zn oxides
(AZO), In-Zn oxides (IZO), Zn-Sn oxides (ZTO), Zn-Sn-Al oxides (AZTO).
By using these transparent conductive oxides, the visible region of transparent conductive oxide film 12 can be higher maintained
Light transmission (visual perspective rate) in domain, and resistance can be reduced.
Here, transparent conductive oxide film 12 is preferably amorphous film.
Specifically, in the X-ray diffraction measure of transparent conductive oxide film 12, exist with as shown in (a) such as Fig. 3
Clearly the crystalloid film of peak crystallization is compared, in the absence of the amorphous film of clearly peak crystallization preferably as shown in (b) of Fig. 3.
In present embodiment, transparent conductive oxide film 12 is the amorphous film of In-Sn oxides (ITO).
Also, in the electrically conducting transparent distribution 10 of present embodiment, in the state of the stacked film being etched before treatment,
The visual perspective rate of visible region is more than 70%.
Also, in the electrically conducting transparent distribution 10 of present embodiment, in the state of the stacked film being etched before treatment,
Sheet resistance is 40 Ω/below sq.
Then, the manufacture method of the electrically conducting transparent distribution 10 of present embodiment is illustrated with reference to Fig. 4.
(Ag films film formation process S01)
First, Ag films 11 are formed on substrate 30 using Ag alloy sputtering targets.
Here, for forming Ag alloy sputtering targets during Ag films 11, the composition of the Ag films 11 according to institute's film forming adjusts its group
Into.
Ag alloy sputtering targets in present embodiment are manufactured as described below.
As raw material, prepare the Sn of the Ag and more than the mass % of purity 99.9 of more than the mass % of purity 99.9, In, Mg, Ti,
Sb、Cu。
Then, in melting furnace, Ag is melted under high vacuum or inert gas atmosphere, and added in resulting liquation
In any one or two or more, Sb, Cu in Sn, In, Mg, Ti of ormal weight any one or it is two or more.Afterwards, exist
The Ag alloy pigs of above-mentioned composition are melted and made under vacuum or inert gas atmosphere.
Here, the fusing on Ag, preferably the atmosphere inside melting furnace is temporarily set to after vacuum to be replaced by Ar
Carried out under atmosphere, after fusing, the liquation to Ag adds Sn, In, Mg, Ti, Sb, Cu under an ar atmosphere.In addition, Sn, In, Mg,
Ti, Sb, Cu can also be added in the form of the foundry alloy of pre-production.
Resulting Ag alloy pigs are carried out it is cold rolling after, implement in an atmosphere for example with 600 DEG C keep two hours
Heat treatment, be then machined, thus make given size Ag alloy sputtering targets.
In Ag film film formation process S01, above-mentioned Ag alloy sputtering targets are welded in anaerobic copper backing plate, and be installed on
Magnetically controlled DC sputtering device.Now, it is opposed with Ag alloy sputtering targets and across regulation interval arrange substrate 30.
Then, will be exhausted inside magnetically controlled DC sputtering device to such as 5 × 10 by vacuum pumping hardware-5Below Pa
Afterwards, Ar gases are imported and is set to the sputtering pressure of regulation, then apply the d.c. sputtering of such as 50W to target by dc source
Power.
Thus, plasma is produced between substrate 30 and Ag alloy sputtering targets, and Ag films 11 is formed on substrate 30.
(transparent conductive oxide film film formation process S02)
Also, sputtered using the sputtering target being made up of transparent conductive oxide on the Ag films 11 of institute's film forming, and
Transparent conductive oxide film 12 is formed on Ag films 11.In addition, being used as the situation of transparent conductive oxide film 12 in formation ito film
Under, can select and be formed according to membrance casting condition to crystallize plasma membrane and amorphous film.
Thus, the stacked film for being laminated with Ag films 11 and transparent conductive oxide film 12 is formed.
(etching process operation S03)
Then, treatment is etched to above-mentioned stacked film, and forms Wiring pattern.
First, the painting erosion resistant agent liquid and after carrying out preliminary drying on the stacked film, is entered by exposure machine to Wiring pattern shape
Row exposure, and dry after carrying out and form resist film.Afterwards, developer solution is impregnated in, and removes the resist film of exposure portion.
Also, oxalic acid etching solution is impregnated in, is etched in the lump to having removed the stacked film of part of resist.In addition,
For etching mode, dipping is not limited to, it is possible to use spray etching etc..
Here, in present embodiment, as oxalic acid etching solution, using concentration of oxalic acid more than 3 mass % and 7 mass % with
Under scope in oxalic acid aqueous solution.Also, the temperature of oxalic acid etching solution is set as 40~60 DEG C.Here, when concentration of oxalic acid is small
When 3 mass %, it is possible to which etch-rate is slack-off and cannot effectively be etched treatment.
On the other hand, if concentration of oxalic acid is more than 7 mass %, it is likely that separate out oxalic acid in a liquid.According to case above,
In present embodiment, the concentration of oxalic acid in oxalic acid aqueous solution is set in more than 3 mass % and in the scope of below 7 mass %.
Concentration of oxalic acid in oxalic acid aqueous solution is more preferably more than 3 mass % and below 5 mass %.
In addition, in the oxalic acid etching solution, in order to suppress the generation of etch residue, organic additive can be added.Oxalic acid
And the content of the additive beyond water (solvent) is preferably limited to below 4 mass %.
(resist stripping process S04)
After etching process operation S03, corrosion inhibitor stripper is impregnated in, and peel off resist film.
Thus, the electrically conducting transparent distribution 10 of the Wiring pattern with regulation is produced.
In the electrically conducting transparent distribution 10 of present embodiment as constructed as above, Ag films 11 are relative to transparent conductive oxide film 12
Overetch amount L be less than 1 μm, even if therefore Wiring pattern shape in etching process operation S03 wiring width it is narrower
In the case of, it is also possible to ensure the width of Ag films, and be able to ensure that electric conductivity.
Also, the thickness ta of Ag films 11 is in the scope of more than 3nm and below 15nm, therefore visual perspective rate is excellent, and
And it is able to ensure that the electric conductivity of electrically conducting transparent distribution 10.Therefore, it is particularly suitable as the distribution of various displays and contact panel.
Also, in present embodiment, Ag films 11 are made up of the Ag alloys for constituting as follows：To add up to more than 0.05 atom %
And 10.0 scope below atom % is used as addition unit comprising any one in Sn, In, Mg, Ti or two or more elements
Element, remainder is made up of Ag and inevitable impurity.Therefore, the wetability of Ag films is improved, even if in Ag films 11
Thickness ta is below 15nm, than in the case of relatively thin, it is also possible to suppress the cohesion of film.Therefore, it is possible to reduce electrically conducting transparent distribution
10 resistance, and visual perspective rate can be improved.
And, in present embodiment, it is following composition to constitute the Ag alloys of Ag films 11：Except comprising above-mentioned addition element with
Outward, also comprising more than 0.01 atom % any one party or two sides in the Sb and Cu of more than 0.1 atom %, also, all add
Added elements are added up to below 10.0 atom %, and remainder is made up of Ag and inevitable impurity.In present embodiment, lead to
Addition Sb and Cu are crossed, can further suppress the cohesion of film, can further reduce the resistance of electrically conducting transparent distribution 10, and can
Further improve visual perspective rate.
Also, in the electrically conducting transparent distribution 10 of present embodiment, implement the stacked film before etching process operation S03
In, it is seen that the visual perspective rate in light region is more than 70%, and sheet resistance is 40 Ω/below sq, therefore as identification
And the electrically conducting transparent distribution 10 of excellent electric conductivity, various displays, contact panel can be applied to.
And, in the present embodiment, transparent conductive oxide film 12 is amorphous ito film, therefore in etching process
In operation S03, treatment can be reliably etched using oxalic acid etching solution.Therefore, it is possible to be reliably suppressed the mistake of Ag films 11
Etch quantity L.
The manufacture method of the electrically conducting transparent distribution 10 according to present embodiment, the thickness ta of Ag films 11 is formed as more than 3nm
And in the scope of below 15nm, than relatively thin, therefore in etching process operation S03, even if in the situation using oxalic acid etching solution
Under, it is also possible to Ag films 11 are removed, and Wiring pattern can be formed.
Also, in the present embodiment, as oxalic acid etching solution, using concentration of oxalic acid in more than 3 mass % and 7 mass %
Oxalic acid aqueous solution in following scope, therefore, it is possible to be etched in the lump to Ag films 11 and transparent conductive oxide film 12, and
And can reliably reduce the overetch amount L of Ag films 11.
And, in the present embodiment, the thickness to of transparent conductive oxide film 12 is in more than 5nm and the model of below 80nm
In enclosing, therefore, it is possible to ensure the electric conductivity and visual perspective rate of transparent conductive oxide film 12.
In addition, the thickness to of transparent conductive oxide film 12 is following thickness：Using the optical constant (refraction of each single phase film
Rate and extinction coefficient), optical analog is carried out with Ag films 11 and transparent conductive oxide film 12 this double-layer structure, by optical dry
Disturb effect and the transmissivity of visible region is improved.
More than, embodiments of the present invention are illustrated, but the present invention is not limited to this, as long as not departing from this
Can suitably be changed in the range of the technological thought of invention.
For example, in the present embodiment, Ag films 11 and transparent conductive oxide film are sequentially formed with the one side of substrate 30
12, but be not limited to this, or it is sequentially formed with the knot of transparent conductive oxide film 12 and Ag films 11 in the one side of substrate 30
Structure.
Also, for example, as shown in Figure 5, it is also possible to be to be formed with transparent conductive oxide film in a surface side of Ag films 111
112A and it is formed with the electrically conducting transparent distribution 110 of transparent conductive oxide film 112B in another surface side.In this case, one can be entered
Step improves environment resistant.In addition, transparent conductive oxide film 112A can be by mutually different with transparent conductive oxide film 112B
Composition transparent conductive oxide constitute.Furthermore, it is possible to Ag films and transparent conductive oxide film layer are stacked as into any amount, example
Such as more than four layers.
Embodiment
Confirm that the result of experiment is illustrated obtained from confirming on the effect to stacked film of the invention.
(embodiment 1)
Made as follows shown in table 1 composition (transparent conductive oxide film, Ag films, transparent conductive oxide film this
Three-decker) stacked film.
When Ag films are formed, the sputtering target of the composition corresponding with Ag films shown in table 1 is prepared.In addition, target size is set
It is diameter phi：4 inches × thickness t：6mm.
Also, transparent conductive oxide film has used following transparent conductive oxide sputtering target.
ITO：The oxidate sintered body target of the In and Sn of Sn of the summation comprising 10 atom % relative to In and Sn.
IZO：The oxidate sintered body target of the In and Zn of Zn of the summation comprising 30 atom % relative to In and Zn.
ZTO：The oxidate sintered body target of the Zn and Sn of Sn of the summation comprising 50 atom % relative to Zn and Sn.
AZO：The oxidate sintered body target of the Zn and Al of Al of the summation comprising 2 atom % relative to Zn and Al.
AZTO：Al, the oxygen of Zn, Al and Sn of the Sn of 10 atom %s of the summation comprising 2 atom % relative to Zn, Al and Sn
Compound sintered body target.
In addition, " crystalloid " is to be spread out by X-ray as shown in (a) of Fig. 3 in transparent conductive oxide film in table 1
Penetrate the situation for determining and observing clearly peak crystallization.Also, " noncrystalline " is to pass through X-ray diffraction as shown in (b) of Fig. 3
Determine the situation for not observing clearly peak crystallization.
Here, the membrance casting condition of transparent conductive oxide film is as follows.
Substrate：Glass substrate ((コ ー ニ Application グ societies of Corning Incorporated) EAGLE XG, thickness 0.7mm processed for having cleaned)
Use gas：Ar+2 volume % oxygen
Air pressure：0.67Pa
Sputtering power：Direct current 300W
The distance between target and substrate：70mm
Also, the membrance casting condition of Ag films is as follows.
Final vacuum：5×10-5Below Pa
Use gas：Ar
Air pressure：0.67Pa
Sputtering power：Direct current 200W
The distance between target and substrate：70mm
To resulting stacked film, etching process has been carried out as follows.
First, resist liquid (Tokyo Ying Hua Co., Ltd. (East JingApplied Hua Co., Ltd.) OFPR- processed is added dropwise on stacked film
8600), and spin-coating erosion resistant agent, and in an atmosphere so that the condition of 110 DEG C × 90 seconds carries out preliminary drying resist film is formed.
Then, it is respectively 30 μm of Wiring pattern wiring width and patch bay to be exposed to resist film by exposure machine.
The stacked film that will be exposed at room temperature impregnated in developer solution (Tokyo should change Co. Ltd. system NMD-W) 100 seconds and eliminate exposure
The resist film in light portion.Afterwards, rear baking was carried out with the condition of 150 DEG C × 300 seconds in an atmosphere.
Then, in No.1-7, (concentration of oxalic acid is the oxalic acid water of 4 mass % to impregnated in the oxalic acid etching solution of 40 DEG C of temperature
Solution) 100~400 seconds and etched.
In No.8-14, the nitration mixture (Northeast chemistry strain formula being made up of phosphoric acid, nitric acid and acetic acid of 40 DEG C of temperature is impregnated in
(Off East KCCs of commercial firm) ITO -02 processed) 30~80 seconds and etched.
In No.15~21, etched with two stages.First, impregnated in the Northeast chemistry strain formula of 40 DEG C of temperature
In commercial firm ITO-07N 30 seconds and carried out the etching of transparent conductive oxide film.Afterwards, impregnated in the Northeast of 40 DEG C of temperature
In KCC SEA-5N 10 seconds and carried out the etching of Ag films.
It has been made as above after etching process, the ultrasonic wave that impregnated in pure water and implement a minute is cleaned, and is obtained
The electrically conducting transparent distribution of No.1-21.
On the electrically conducting transparent distribution for being obtained, in order to observe distribution section and substrate of riving, seen using electron microscope
Its section is examined.
Also, transparent conductive oxide film and the respective etching of Ag films for being confirmed by electron microscope observation
The film of end, the residual quantity of the position on parallel direction is evaluated as " overetch amount ".Evaluation result is shown in table
1。
In the No.8-14 etched in the lump using the nitration mixture being made up of phosphoric acid, nitric acid and acetic acid, erosion was confirmed
Quarter measures larger.
Also, in No.15~21 for implementing etching with two stages, and etched in the lump using nitration mixture
No.8~14 are compared and are suppressed, but overetch amount has exceeded 1 μm.
In contrast, in No.1~7 etched in the lump using oxalic acid etching solution, overetch amount all suppresses
Less than 1 μm.
Confirmed according to case above, having obtained the crossing for Ag films relative to transparent conductive oxide film according to the present invention loses
Quarter measures the electrically conducting transparent distribution for less than 1 μm.
(embodiment 2)
Then, by the method same with No.1~7 of embodiment 1, structure (the electrically conducting transparent oxygen shown in table 2 has been manufactured
Compound film, Ag films, transparent conductive oxide film this three-decker) electrically conducting transparent distribution.
On resulting electrically conducting transparent distribution, have rated could be etched using oxalic acid etching solution.In addition, to etching
Electrically conducting transparent distribution afterwards carries out observation by light microscope and SEM observations, will not confirm residue and overetch amount is 1 μm
Following situation is evaluated as " A ", and the results verification that will can be etched but be observed by observation by light microscope and SEM is to etching
The situation of residue is evaluated as " B ", it is impossible to which three layers of (transparent conductive oxide film, Ag films, transparent conductive oxide film) one are gone forward side by side
The situation of situation or overetch amount more than 1 μm of row etching is evaluated as " C ".Evaluation result is shown in table 2.
[table 2]
By the thickness of Ag films be formed as the No.31 thicker than the scope of the present invention, 32,41,42,51,52,61,62,71,
72nd, in 81,82, it is impossible to fully etch Ag films.
On the other hand, the thickness of Ag films is being set in No.33~35,43~45,53~55,63 of the scope of the present invention
In~65,73~75,83~85, even if in the case of using oxalic acid etching solution, it is also possible to fully etch Ag films.
Experimental result according to more than is confirmed, and is located in the scope of below 15nm by by the thickness of Ag films, can be made
It is etched with oxalic acid etching solution.
(embodiment 3)
Then, by the method same with No.1~7 of embodiment 1, structure (the electrically conducting transparent oxygen shown in table 3 has been manufactured
Compound film, Ag films, transparent conductive oxide film this three-decker) electrically conducting transparent distribution.
On resulting electrically conducting transparent distribution, have rated could be etched using oxalic acid etching solution.Evaluation content with
Embodiment 2 is identical.Evaluation result is shown in table 3.
[table 3]
Confirmed in the case where oxalic acid aqueous solution is used as etching solution, form crystalloid ito film be used as it is transparent
In the No.92 of conductive oxide film, compared with the No.91 of amorphous ito film is formd, the etching based on oxalic acid aqueous solution
It is poor.In addition, in the case where the mixed liquor of oxalic acid aqueous solution and nitric acid is used as etching solution, even if foring crystalloid
Ito film is used as in the No.93 of transparent conductive oxide film, and etching is also good.
Experimental result according to more than is confirmed, in the case where oxalic acid aqueous solution is used as etching solution, preferably clear
Conductive oxide film is amorphous film.
(embodiment 4)
Then, by the method same with No.1~7 of embodiment 1, the electrically conducting transparent for having manufactured the structure shown in table 4 is matched somebody with somebody
Line.In addition, in the embodiment 4, being set to form transparent conductive oxide film on the glass substrate and forming Ag films above
Double-decker.
In No.101~117, after the etching process based on oxalic acid etching solution, residue and overetch are not confirmed
Measure all less than 1 μm.
On resulting electrically conducting transparent distribution, sheet resistance value is determined.For the measure of sheet resistance value, using table
Surface resistance analyzer (oiling company of Mitsubishi (oiling society of Mitsubishi) system, Loresta AP MCP-T400) is carried out by four probe method
Determine.Evaluation result is shown in table 4.
[table 4]
In No.111~117 of the total amount more than 10 atom % for constituting the addition element of Ag alloys of Ag films, surface
Resistance value is significantly more than 40 Ω/sq.On the other hand, the total amount in the addition element of the Ag alloys for constituting Ag films is 10 atom %
In following No.101~108, sheet resistance value is 40 Ω/below sq.
Experimental result according to more than is confirmed, and especially, in order to obtain low-resistance electrically conducting transparent distribution, will preferably be constituted
The total amount of the addition element of the Ag alloys of Ag films is defined as below 10 atom %.
Symbol description
10th, 110- electrically conducting transparents distribution, 11,111-Ag films, 12,112A, 112B- transparent conductive oxide film.
Claims (6)
1. a kind of electrically conducting transparent distribution, it has the Ag films being made up of Ag or Ag alloys and the electrically conducting transparent being laminated on the Ag films
Oxidation film, and Wiring pattern is formed with by etching process, the electrically conducting transparent distribution is characterised by,
The thickness of the Ag films in the scope of below 15nm,
The Ag films are less than 1 μm relative to the overetch amount of the transparent conductive oxide film.
2. electrically conducting transparent distribution according to claim 1, it is characterised in that
The Ag films are made up of the Ag alloys for constituting as follows：To add up to it is more than 0.05 atom % and below 10.0 atom % model
Enclose and be used as addition element comprising any one in Sn, In, Mg, Ti or two or more elements, and remainder by Ag and
Inevitable impurity is constituted.
3. electrically conducting transparent distribution according to claim 2, it is characterised in that
The Ag films are made up of the Ag alloys for constituting as follows：Also include the Sb and more than 0.1 atom % of more than 0.01 atom %
Any one or two kinds in Cu are used as addition element, and all addition element are added up to below 10.0 atom %, and
Remainder is made up of Ag and inevitable impurity.
4. electrically conducting transparent distribution according to any one of claim 1 to 3, it is characterised in that
The transparent conductive oxide film is amorphous film.
5. a kind of manufacture method of electrically conducting transparent distribution, the electrically conducting transparent distribution have the Ag films that are made up of Ag or Ag alloys and
The transparent conductive oxide film on the Ag films is laminated in, and is formed with Wiring pattern, the manufacture method of the electrically conducting transparent distribution
It is characterised by,
The thickness of the Ag films is located in the scope of below 15nm,
With etching process operation, treatment is etched to the stacked film with the Ag films and the transparent conductive oxide film
And Wiring pattern is formed,
In the etching process operation, the transparent conductive oxide film and the Ag films are carried out in the lump using oxalic acid etching solution molten
Solution.
6. the manufacture method of electrically conducting transparent distribution according to claim 5, it is characterised in that
The oxalic acid etching solution is oxalic acid aqueous solution of the concentration of oxalic acid in the scope of more than 3 mass % and below 7 mass %.
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-037950 | 2015-02-27 | ||
| JP2015037950 | 2015-02-27 | ||
| JP2015217683 | 2015-11-05 | ||
| JP2015-217683 | 2015-11-05 | ||
| JP2016-034768 | 2016-02-25 | ||
| JP2016034768A JP6020750B1 (en) | 2015-02-27 | 2016-02-25 | Transparent conductive wiring and method for manufacturing transparent conductive wiring |
| PCT/JP2016/055855 WO2016136953A1 (en) | 2015-02-27 | 2016-02-26 | Transparent conductive wire and method for manufacturing transparent conductive wire |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106796885A true CN106796885A (en) | 2017-05-31 |
| CN106796885B CN106796885B (en) | 2018-04-20 |
Family
ID=57216895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680002259.7A Active CN106796885B (en) | 2015-02-27 | 2016-02-26 | The manufacture method of electrically conducting transparent distribution and electrically conducting transparent distribution |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6020750B1 (en) |
| KR (1) | KR101777549B1 (en) |
| CN (1) | CN106796885B (en) |
| TW (1) | TWI591696B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108520856A (en) * | 2018-05-18 | 2018-09-11 | 中国科学院微电子研究所 | Patterning method of ITO thin film |
| US11639470B2 (en) | 2020-12-28 | 2023-05-02 | Samsung Display Co., Ltd. | Etching composition for thin film containing silver, method for forming pattern and method for manufacturing a display device using the same |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110168706B (en) * | 2017-01-20 | 2023-04-04 | 凸版印刷株式会社 | Display device and display device substrate |
| JP2020090708A (en) | 2018-12-05 | 2020-06-11 | 三菱マテリアル株式会社 | Metal film and sputtering target |
| KR102134287B1 (en) * | 2020-01-30 | 2020-07-15 | 주식회사 비와이인더스트리 | Unloading scraper device of belt conveyor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07114841A (en) * | 1993-10-18 | 1995-05-02 | Toshiba Corp | Transparent conductive film and its forming and working method |
| JPH09123337A (en) * | 1995-03-22 | 1997-05-13 | Toppan Printing Co Ltd | Multilayer conductive film, transparent electrode plate using said film, and liquid crystal display device |
| JPH11302876A (en) * | 1998-04-16 | 1999-11-02 | Nippon Sheet Glass Co Ltd | Electrode pattern processing method for transparent conductive film |
| CN1667933A (en) * | 2004-03-09 | 2005-09-14 | 英泰克公司 | Portable power inverter with pass through device |
| JP2015030896A (en) * | 2013-08-05 | 2015-02-16 | 出光興産株式会社 | Sputtering target and oxide transparent conductive film |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005250191A (en) * | 2004-03-05 | 2005-09-15 | Idemitsu Kosan Co Ltd | Translucent / half-reflection electrode substrate, and method for manufacturing same, and liquid crystal display device using translucent / half-reflection electrode substrate |
| JP2006216266A (en) | 2005-02-01 | 2006-08-17 | Kitagawa Ind Co Ltd | Transparent conductive film |
| JP4773145B2 (en) | 2005-06-30 | 2011-09-14 | アルバック成膜株式会社 | Ag or Ag alloy reflective electrode film with increased reflection film and method for producing the same |
| JP2008080743A (en) | 2006-09-28 | 2008-04-10 | Optrex Corp | Touch panel device |
| JP4957584B2 (en) | 2008-02-29 | 2012-06-20 | 東ソー株式会社 | Etching composition and etching method |
| JP2012054006A (en) | 2010-08-31 | 2012-03-15 | Gunze Ltd | Transparent conductive gas barrier film and method for producing the same |
| JP5488849B2 (en) * | 2011-06-24 | 2014-05-14 | 三菱マテリアル株式会社 | Conductive film, method for producing the same, and sputtering target used therefor |
-
2016
- 2016-02-25 JP JP2016034768A patent/JP6020750B1/en not_active Expired - Fee Related
- 2016-02-26 KR KR1020177004671A patent/KR101777549B1/en active IP Right Grant
- 2016-02-26 TW TW105106099A patent/TWI591696B/en active
- 2016-02-26 CN CN201680002259.7A patent/CN106796885B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07114841A (en) * | 1993-10-18 | 1995-05-02 | Toshiba Corp | Transparent conductive film and its forming and working method |
| JPH09123337A (en) * | 1995-03-22 | 1997-05-13 | Toppan Printing Co Ltd | Multilayer conductive film, transparent electrode plate using said film, and liquid crystal display device |
| JPH11302876A (en) * | 1998-04-16 | 1999-11-02 | Nippon Sheet Glass Co Ltd | Electrode pattern processing method for transparent conductive film |
| CN1667933A (en) * | 2004-03-09 | 2005-09-14 | 英泰克公司 | Portable power inverter with pass through device |
| JP2015030896A (en) * | 2013-08-05 | 2015-02-16 | 出光興産株式会社 | Sputtering target and oxide transparent conductive film |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108520856A (en) * | 2018-05-18 | 2018-09-11 | 中国科学院微电子研究所 | Patterning method of ITO thin film |
| US11639470B2 (en) | 2020-12-28 | 2023-05-02 | Samsung Display Co., Ltd. | Etching composition for thin film containing silver, method for forming pattern and method for manufacturing a display device using the same |
| US12031076B2 (en) | 2020-12-28 | 2024-07-09 | Samsung Display Co., Ltd. | Etching composition for thin film containing silver, method for forming pattern and method for manufacturing a display device using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170030642A (en) | 2017-03-17 |
| TW201703150A (en) | 2017-01-16 |
| CN106796885B (en) | 2018-04-20 |
| TWI591696B (en) | 2017-07-11 |
| JP6020750B1 (en) | 2016-11-02 |
| KR101777549B1 (en) | 2017-09-11 |
| JP2017091491A (en) | 2017-05-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106796885B (en) | The manufacture method of electrically conducting transparent distribution and electrically conducting transparent distribution | |
| WO2016024615A1 (en) | Laminated film, laminated wiring film, and method for manufacturing laminated wiring film | |
| KR100638977B1 (en) | Ag-BASE ALLOY WIRING/ELECTRODE FILM FOR FLAT PANEL DISPLAY, Ag-BASE ALLOY SPUTTERING TARGET, AND FLAT PANEL DISPLAY | |
| CN107709584A (en) | Ag alloy films and its manufacture method, Ag alloy sputtering targets and stacked film | |
| WO2019221257A1 (en) | Multilayer film and ag alloy sputtering target | |
| JP2016157925A (en) | Multilayer wiring film for electronic component, and sputtering target material for coating layer formation | |
| JP2019203194A (en) | MULTILAYER FILM AND Ag ALLOY SPUTTERING TARGET | |
| JP6135275B2 (en) | Sputtering target for protective film formation | |
| JP4655281B2 (en) | Thin film wiring layer | |
| JP5979034B2 (en) | Sputtering target for protective film formation | |
| JP6250614B2 (en) | Cu laminated film and Cu alloy sputtering target | |
| WO2014021173A1 (en) | SPUTTERING TARGET FOR FORMING Cu ALLOY THIN FILM, AND METHOD FOR MANUFACTURING SAME | |
| JP5724998B2 (en) | Protective film forming sputtering target and laminated wiring film | |
| JP6207406B2 (en) | Sputtering target material and wiring laminate | |
| JP6380837B2 (en) | Sputtering target material for forming coating layer and method for producing the same | |
| JP6398594B2 (en) | Sputtering target | |
| JP2019131850A (en) | Laminated film and Ag alloy sputtering target | |
| JP5125112B2 (en) | Wiring and electrode for liquid crystal display device free from thermal defect and sputtering target for forming them | |
| WO2016136953A1 (en) | Transparent conductive wire and method for manufacturing transparent conductive wire | |
| TW201631168A (en) | Copper-based alloy sputtering target | |
| JP2005091543A (en) | Thin film wiring layer | |
| JP2006070345A (en) | Ag-BASED ALLOY WIRING ELECTRODE FILM AND Ag-BASE ALLOY SPUTTERING TARGET FOR FLAT PANEL DISPLAY, AND FLAT PANEL DISPLAY | |
| CN111183508A (en) | Wiring structure and target material | |
| TWI685477B (en) | Sputtering target and multilayer film | |
| JP2021064656A (en) | Wiring structure and target material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |