CN106791500A - The noise-cancellation circuit of imageing sensor - Google Patents
The noise-cancellation circuit of imageing sensor Download PDFInfo
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- CN106791500A CN106791500A CN201611233592.7A CN201611233592A CN106791500A CN 106791500 A CN106791500 A CN 106791500A CN 201611233592 A CN201611233592 A CN 201611233592A CN 106791500 A CN106791500 A CN 106791500A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
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Abstract
The present invention provides a kind of noise-cancellation circuit of imageing sensor, including：First noise channel, power supply noise follows transistor to export the first output noise signal by source；Second noise channel, power supply noise passing ratio adjustment module exports the second output noise signal；The proportion adjustment module adjusts the gain of the second output noise signal for exporting by adjusting electric capacity and/or mutual conductance, and the first output noise signal is identical with the second output noise signal amplitude, opposite in phase, with noise of cancelling out each other.In the present invention, the second noise channel is introduced, offset by two noise channels by the way that source to be followed the power supply noise of transistor, play anti-power supply disturbance, reduce picture noise, improve the purpose of picture quality.
Description
Technical field
The present invention relates to image sensor technologies field, more particularly to a kind of noise-cancellation circuit of imageing sensor.
Background technology
Imageing sensor is the important component of digital camera, is a kind of optical imagery to be converted into electrical signal
Equipment, it is widely used in digital camera, mobile terminal, portable electron device and other electro-optical devices.Figure
As sensor is according to the difference of element, CCD can be divided into（Charge Coupled Device, charge coupled cell）And CMOS
（Complementary Metal oxide Semiconductor, CMOS complementary metal-oxide-semiconductor element）Image sensing
The major class of device two.Ccd image sensor except large-scale application in addition to digital camera, be also widely used for video camera, scanner, with
And industrial circle etc..And cmos image sensor is programmable immediately due to its Highgrade integration, low-power consumption and local pixel
Read, speed is fast, low cost and other advantages, is applicable to the fields such as digital camera, PC video cameras, mobile communication product.
With the development continuously and healthily of imageing sensor, promote it and further minimize and integrated.Ccd image is passed
Sensor and cmos image sensor are all to use photoelectric conversion regions, typically using photodiode（Photodiode or
Photodetector）Incident light is collected, and is converted into the optical charge that can carry out image procossing.Existing cmos image
In sensor, the pel array of several pixel cells composition receives incident light, collects photon.Pixel cell often using 3T,
The structure of 4T or 5T, by taking 4T as an example, by transfering transistor（Transfer Transistor、TX）, reset transistor（Reset
Transistor、RST）, source follow transistor（Source-Follower Transistor、SF）, row gate tube（Row
Selector Transistor、RSEL）, basic operation principle is：Photo-generated carrier is formed by opto-electronic conversion, mould is produced
Intend signal, read by the ranks of going forward side by side of the row gating to pel array, read the analog signal of each column, carry out follow-up computing and increase
The signal processings such as beneficial amplification, analog-to-digital conversion.
The pixel in real work（pixel）Source follow the noise of transistor SF pipe power supplies can be by electric capacity
On couple to the floating diffusion region FD of pixel cell, then it is exaggerated by signal path, analog-to-digital conversion（AD）After conversion
Embody in output data, influence signal noise ratio (snr) of image.Common practices is for pixel circuits are individually a LDO（Low
Dropout Regulator）, to reduce influence of the externally fed power supply noise to picture quality.If the output of LDO is subject to shadow
Ring, noise is same or can embody on image.In the case of LDO noise suppressed limited capacities, a kind of solution is,
Power supply noise all the way is introduced in addition in signal path, for offsetting incoming part from pixel.It is pixel that traditional approach is
Power supply is a LDO, is used to the noise isolated on externally fed power supply.This method is when chip interference is larger, and its stabilization is fast
Degree is limited, and during its stabilization, noise can be still embodied on image.
The content of the invention
It is an object of the invention to provide a kind of noise-cancellation circuit of imageing sensor, the source in the prior art that solves follows
Transistor power supply introduces the technical problem of noise.
In order to solve the above-mentioned technical problem, the present invention provides a kind of noise-cancellation circuit of imageing sensor, including：
First noise channel, power supply noise follows transistor to export the first output noise signal by source；
Second noise channel, power supply noise passing ratio adjustment module exports the second output noise signal；
The proportion adjustment module adjusts the gain of the second output noise signal for exporting, institute by adjusting electric capacity and/or mutual conductance
State that the first output noise signal is identical with the second output noise signal amplitude, opposite in phase, with noise of cancelling out each other.
Optionally, first noise channel include be connected to source follow between the drain electrode of transistor and grid first electricity
Hold and be connected to source and follow the second electric capacity between the grid of transistor and ground terminal.
Optionally, in the second noise channel, power supply noise is connected to biasing module by the proportion adjustment module, institute
Stating biasing module includes the first nmos pass transistor and the second nmos pass transistor, and the drain electrode connection of first nmos pass transistor is described
Source follows the source electrode of transistor, source electrode connection first node, grid to pass through the 3rd capacitance connection to ground terminal, and the 2nd NMOS is brilliant
The source ground of body pipe, the drain electrode connection first node, grid connection Section Point.
Optionally, the proportion adjustment module includes being connected in parallel in first constant capacitance and second of the Section Point
Constant capacitance, and be connected to first constant capacitance and the source follow between the supply voltage of transistor can power transformation
Hold, by adjusting the capacitance of the variable capacitance, adjust the gain of the second output noise signal.
Optionally, a pole of the variable capacitance connects the supply voltage that the source follows transistor, and another pole connects institute
A pole of the first constant capacitance is stated, another pole of first constant capacitance connects the Section Point, the second constant electricity
The pole for holding connects the Section Point, and another pole connects ground terminal.
Optionally, the proportion adjustment module includes the second of the first proportion adjustment module of regulation electric capacity and regulation mutual conductance
Proportion adjustment module, the first proportion adjustment module connects the Section Point of the biasing module, second proportion adjustment
Module connects the first node of the biasing module.
Optionally, the first proportion adjustment module include be connected in parallel in the Section Point the 3rd constant capacitance and
4th constant capacitance, another pole of the 3rd constant capacitance connects the supply voltage that the source follows transistor, the described 4th
Another pole connection ground terminal of constant capacitance.
Optionally, the second proportion adjustment module includes the 3rd nmos pass transistor, the leakage of the 3rd nmos pass transistor
Pole connects the first node, and source ground end, grid is connected to ground terminal by partially installing capacitor, adjusts the electricity of the Section Point
The mutual conductance of pressure regulation second nmos pass transistor, the second proportion adjustment module is suitably stable for the source and follows transistor
Operating current.
Accordingly, the present invention also provides a kind of noise-cancellation circuit of imageing sensor, including：
First noise channel, power supply noise follows transistor to export the first output noise signal by source；
Second noise channel, power supply noise exports the second output noise signal by biasing module；
The proportion adjustment module of the biasing module is connected to, the proportion adjustment module follows transistor by adjusting the source
Mutual conductance regulation output the first output noise signal gain, the first output noise signal and the second output noise signal
Amplitude is identical, opposite in phase, with noise of cancelling out each other.
Optionally, first noise channel include be connected to source follow between the drain electrode of transistor and grid first electricity
Hold and be connected to source and follow the second electric capacity between the grid of transistor and ground terminal.
Optionally, the biasing module includes the first nmos pass transistor and the second nmos pass transistor, and a NMOS is brilliant
The drain electrode connection source of body pipe follows the source electrode of transistor, source electrode connection first node, grid to pass through the 3rd capacitance connection extremely
Ground terminal, the source ground of second nmos pass transistor, the drain electrode connection first node, grid connects the source and follows crystal
The supply voltage of pipe.
Optionally, the proportion adjustment module includes the 3rd nmos pass transistor, and the drain electrode of the 3rd nmos pass transistor connects
Connect the first node, source ground end, grid connection Section Point, adjust source described in the voltage-regulation of the Section Point with
With the mutual conductance of transistor, the 3rd nmos pass transistor is used to stablize the operating current of first nmos pass transistor.
Relative to prior art, the noise-cancellation circuit of imageing sensor of the invention has the advantages that：
In the present invention, the second noise channel is introduced, entered by two noise channels by the way that source to be followed the power supply noise of transistor
Row is offset, and plays anti-power supply disturbance, reduces picture noise, improves the purpose of picture quality.
Brief description of the drawings
Fig. 1 is the circuit diagram of the first noise channel in one embodiment of the invention；
Fig. 2 is the circuit diagram of the second noise channel in first embodiment of the invention；
Fig. 3 is the circuit diagram of the second noise channel in second embodiment of the invention；
Fig. 4 is the circuit diagram of the second noise channel in third embodiment of the invention.
Specific embodiment
Elaborate many details in order to fully understand the present invention in the following description.But the present invention can be with
Much it is different from other manner described here to implement, those skilled in the art can be in the situation without prejudice to intension of the present invention
Under do similar popularization, therefore the present invention is not limited by following public specific implementation.
Secondly, the present invention is described in detail using schematic diagram, when the embodiment of the present invention is described in detail, for purposes of illustration only, institute
It is example to state schematic diagram, and it should not limit the scope of protection of the invention herein.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with accompanying drawing to the present invention
The power supply noise bucking circuit of imageing sensor be described in detail.
The present invention provides a kind of power supply noise bucking circuit suitable for cmos image sensor, and circuit includes：First makes an uproar
Sound travel, power supply noise follows transistor to export the first output noise signal by source；Second noise channel, power supply noise passes through
Proportion adjustment module exports the second output noise signal, and the proportion adjustment module adjusts defeated by adjusting electric capacity and/or mutual conductance
The gain of the second output noise signal for going out, the first output noise signal is identical with the second output noise signal amplitude, phase
Position is conversely, with noise of cancelling out each other.
The noise-cancellation circuit to imageing sensor of the invention is illustrated below in conjunction with the accompanying drawings.
First embodiment
With reference to shown in Fig. 1, the first noise channel includes that being connected to source follows transistor MSFDrain electrode and grid between first electricity
Hold CparAnd be connected to source and follow transistor MSFGrid and ground terminal between the second electric capacity CFD.Source follows transistor MSFDrain electrode
Noise on voltage VPIX passes through the first electric capacity CparIt is coupled to the second electric capacity C of floating diffusion region FDFDOn, crystalline substance is followed by source
Body pipe MSFTransistor M is followed to sourceSFSource electrode output pxda, then by subsequent conditioning circuit be exaggerated quantify to numeric field embodiment arrive
On image.The signal gain of the first noise channel is：
With reference to shown in Fig. 2, in the second noise channel, power supply noise passing ratio adjustment module 20 is connected to biasing module 10,
The biasing module 10 includes the first nmos pass transistor MNBC, the second nmos pass transistor MNB, the 3rd electric capacity C3, a NMOS
Transistor MNBCDrain electrode connection source follow transistor MSFSource electrode（Output end p xda）, source electrode connection the 2nd NMOS crystal
Pipe MNBDrain electrode（First node S1）, grid connection the 3rd electric capacity C3A pole, the 3rd electric capacity C3Another pole connect
Earth terminal, the second nmos pass transistor MNBSource ground, grid connection Section Point S2.The proportion adjustment module 20 is wrapped
Include the first constant capacitance C for being connected to the Section Point S2dcblWith the second constant capacitance Cbias, and to be connected to first constant
Electric capacity and source follow the variable capacitance C between the supply voltage of transistorvar.The variable capacitance CvarA pole connection source follow
Transistor MSFSupply voltage VPIX, another pole connects the first constant capacitance CdcblA pole, the first constant capacitance Cdcbl
Another pole be connected at the Section Point S2 of biasing module, the second constant capacitance CbiasA pole connect the second section
Point S2, another pole connects ground terminal.In the present embodiment, by adjusting the variable capacitance CvarCapacitance, adjust described second defeated
Go out the gain of noise signal, source follows transistor MSFDrain voltage VPIX on noise pass through variable capacitance Cvar, it is first constant
Electric capacity CdcblAnd the second constant capacitance CbiasIt is incorporated at the Section Point S2 of biasing module, by the second nmos pass transistor MNBAnd
Transistor seconds MNBCOutput end p xda is coupled to, then quantization is exaggerated by subsequent conditioning circuit and embodied onto image to numeric field.The
The gain of two noise channels is：
Variable capacitance CvarSize can be by being connected to variable capacitance CvarControl voltage regulation, with cause
The source follows transistor MSFDrain voltage VPIX on noise reached at output end p xda by two paths, its
Amplitude size is the same, opposite in phase, is cancelled out each other at output end p xda, plays and suppresses imageing sensor power supply noise
Purpose.
Second embodiment
It is that first noise channel includes that being connected to source follows transistor M with identical in embodiment oneSFDrain electrode and grid
Between the first electric capacity CparAnd be connected to source and follow transistor MSFGrid and ground terminal between the second electric capacity CFD.Source follows crystal
Pipe MSFDrain voltage VPIX on noise pass through the first electric capacity CparIt is coupled to the second electric capacity C of floating diffusion region FDFDOn, lead to
The source of mistake follows transistor MSFTransistor M is followed to sourceSFSource electrode output pxda, then by subsequent conditioning circuit be exaggerated quantify to number
Embody onto image in word domain.The signal gain of the first noise channel is：
Unlike embodiment one, in the second noise channel, the proportion adjustment module includes the first of regulation electric capacity
Proportion adjustment module 21 and the second proportion adjustment module 22 of regulation mutual conductance, the connection of the first proportion adjustment module 21 biasing mould
The Section Point S2 of block 10, the second proportion adjustment module 22 connects the first node S1 of biasing module 10.
Specifically, with reference to shown in Fig. 3, the first proportion adjustment module 21 includes being connected at the Section Point S2
3rd constant capacitance CnoicanWith the 4th constant capacitance Cbias’, the 3rd constant capacitance CnoicanA pole connect the second section
Point S2, another pole connection source follows transistor MSFSupply voltage VPIX, the 4th constant capacitance Cbias’A pole connection institute
Section Point S2 is stated, another pole connects ground terminal.
The second proportion adjustment module 22 includes the 3rd nmos pass transistor MDCWith partially installing capacitor C0, the 3rd NMOS crystalline substances
Body pipe MDCDrain electrode connect the first node S1, source ground end, the partially installing capacitor C0A pole connection described second
Nmos pass transistor MNBGrid, another pole connects ground terminal.
Second noise channel of the present embodiment, source follows transistor MSFDrain voltage VPIX on noise it is permanent by second
Determine electric capacity CnoicanWith the 4th constant capacitance Cbias’It is incorporated at the Section Point S2 of biasing module 10, by a NMOS crystal
Pipe MNBOutput end p xda is exported, then quantization is exaggerated by subsequent conditioning circuit and embodied onto image to numeric field.Second noise leads to
The gain on road is：
Second nmos pass transistor MNBMutual conductanceSize can be by adjusting the second nmos pass transistor MNBGrid voltage（The
Voltage at two node S2）Regulation, the second ratio module 22 is used to add bias current so that source follows the operating current of transistor
Stabilization, holding source follows transistor MSFMutual conductanceStabilization, with cause
=0
Source follows transistor MSFDrain voltage VPIX on noise reached at output end p xda by two paths, its amplitude
Size is the same, opposite in phase, is cancelled out each other at output end p xda, plays the mesh for suppressing imageing sensor power supply noise
's.
It should be noted that by adjusting the gain of the noise channel of capacitance adjustment second in embodiment one, in embodiment two
The gain of the second noise channel is adjusted by adjusting mutual conductance, in other embodiments of the invention, electric capacity can also be simultaneously adjusted
With mutual conductance, the gain of the second noise channel is adjusted.
3rd embodiment
It is that first noise channel includes that being connected to source follows transistor M with identical in embodiment oneSFDrain electrode and grid
Between the first electric capacity CparAnd be connected to source and follow transistor MSFGrid and ground terminal between the second electric capacity CFD.Source follows crystal
Pipe MSFDrain voltage VPIX on noise pass through the first electric capacity CparIt is coupled to the second electric capacity C of floating diffusion region FDFDOn, lead to
The source of mistake follows transistor MSFTransistor M is followed to sourceSFSource electrode output pxda, then by subsequent conditioning circuit be exaggerated quantify to number
Embody onto image in word domain.The signal gain of the first noise channel is：
With reference to shown in Fig. 4, the biasing module 10 includes the first nmos pass transistor MNBC, the second nmos pass transistor MNB, the 3rd electricity
Hold C3, the first nmos pass transistor MNBCDrain electrode connection source follow transistor MSFSource electrode（Output end p xda）, source electrode connection
The second nmos pass transistor MNBDrain electrode（First node S1）, grid connection the 3rd electric capacity C3A pole, the described 3rd
Electric capacity C3Another pole connection ground terminal, the second nmos pass transistor MNBSource ground, grid connection source follow transistor MSF
Supply voltage.Power supply noise is by the second nmos pass transistor M in biasing module 10NBAnd the first nmos pass transistor MNBCOutput
To pxda ends, then quantization is exaggerated to numeric field embodiment to image by subsequent conditioning circuit, the gain of the second noise channel is：
Wherein, source follows transistor MSFMutual conductanceSize can be by the voltage-regulation of Section Point S2, to cause
In the present embodiment, the 3rd nmos pass transistor MDCEnable to the second nmos pass transistor MNBOperating current keep stabilization, make
Obtain the second nmos pass transistor MNBMutual conductanceStabilization is kept, so that the gain stabilization of the second noise channel.
Source follows transistor MSFDrain voltage VPIX on noise reached at output end p xda by two paths, its width
Value size is the same, and opposite in phase is cancelled out each other at output end p xda, plays the mesh for suppressing imageing sensor power supply noise
's.
In sum, during the present invention provides imageing sensor, the first noise channel and the second noise channel are introduced, by inciting somebody to action
Source follows the power supply noise of transistor to be offset by two noise channels, and the electric capacity in the second noise channel is adjusted respectively
And/or mutual conductance, adjust the gain of the second noise channel so that the gain offsets of the first noise channel and the second noise channel, rise
To anti-power supply disturbance, reduce picture noise, improve the purpose of picture quality.
Although the present invention is disclosed as above with preferred embodiment, it is not for limiting the present invention, any this area
Technical staff without departing from the spirit and scope of the present invention, may be by the methods and techniques content of the disclosure above to this hair
Bright technical scheme makes possible variation and modification, therefore, every content without departing from technical solution of the present invention, according to the present invention
Any simple modification, equivalent variation and modification for being made to above example of technical spirit, belong to technical solution of the present invention
Protection domain.
Claims (12)
1. a kind of noise-cancellation circuit of imageing sensor, it is characterised in that including：
First noise channel, power supply noise follows transistor to export the first output noise signal by source；
Second noise channel, power supply noise passing ratio adjustment module exports the second output noise signal；
The proportion adjustment module adjusts the gain of the second output noise signal for exporting, institute by adjusting electric capacity and/or mutual conductance
State that the first output noise signal is identical with the second output noise signal amplitude, opposite in phase, with noise of cancelling out each other.
2. the noise-cancellation circuit of imageing sensor according to claim 1, it is characterised in that first noise channel
Including be connected to source follow the first electric capacity between the drain electrode of transistor and grid and be connected to source follow the grid of transistor with
The second electric capacity between ground terminal.
3. the noise-cancellation circuit of imageing sensor according to claim 1, it is characterised in that in the second noise channel
In, power supply noise is connected to biasing module by the proportion adjustment module, and the biasing module includes the first nmos pass transistor
And second nmos pass transistor, the drain electrode connection source of first nmos pass transistor follows the source electrode of transistor, source electrode connection
First node, grid is by the 3rd capacitance connection to ground terminal, and the source ground of second nmos pass transistor, drain electrode connection is described
First node, grid connection Section Point.
4. the noise-cancellation circuit of imageing sensor according to claim 3, it is characterised in that the proportion adjustment module
Including being connected in parallel in first constant capacitance and the second constant capacitance of the Section Point, and to be connected to described first constant
Electric capacity and the source follow the variable capacitance between the supply voltage of transistor, by adjusting the capacitance of the variable capacitance,
Adjust the gain of the second output noise signal.
5. the noise-cancellation circuit of imageing sensor according to claim 4, it is characterised in that the one of the variable capacitance
Pole connects the supply voltage that the source follows transistor, and another pole connects a pole of first constant capacitance, and described first is permanent
Another pole for determining electric capacity connects the Section Point, and a pole of second constant capacitance connects the Section Point, Ling Yiji
Connection ground terminal.
6. the noise-cancellation circuit of imageing sensor according to claim 3, it is characterised in that the proportion adjustment module
Including adjusting the first proportion adjustment module of electric capacity and the second proportion adjustment module of regulation mutual conductance, the first proportion adjustment mould
Block connects the Section Point of the biasing module, and the second proportion adjustment module connects the first node of the biasing module.
7. the noise-cancellation circuit of imageing sensor according to claim 6, it is characterised in that first proportion adjustment
Module includes being connected in parallel in the 3rd constant capacitance and the 4th constant capacitance of the Section Point, the 3rd constant capacitance
Another pole connects the supply voltage that the source follows transistor, another pole connection ground terminal of the 4th constant capacitance.
8. the noise-cancellation circuit of imageing sensor according to claim 6, it is characterised in that second proportion adjustment
Module includes the 3rd nmos pass transistor, and the drain electrode of the 3rd nmos pass transistor connects the first node, source ground end, grid
Pole is connected to ground terminal by partially installing capacitor, adjusts the mutual conductance of the second nmos pass transistor described in the voltage-regulation of the Section Point,
The second proportion adjustment module is suitably stable for the operating current that the source follows transistor.
9. a kind of noise-cancellation circuit of imageing sensor, it is characterised in that including：
First noise channel, power supply noise follows transistor to export the first output noise signal by source；
Second noise channel, power supply noise exports the second output noise signal by biasing module；
The proportion adjustment module of the biasing module is connected to, the proportion adjustment module follows transistor by adjusting the source
Mutual conductance regulation output the first output noise signal gain, the first output noise signal and the second output noise signal
Amplitude is identical, opposite in phase, with noise of cancelling out each other.
10. the noise-cancellation circuit of imageing sensor according to claim 9, it is characterised in that first noise leads to
Road includes that being connected to source follows the first electric capacity between the drain electrode of transistor and grid and be connected to the grid that source follows transistor
The second electric capacity between ground terminal.
The noise-cancellation circuit of 11. imageing sensors according to claim 9, it is characterised in that the biasing module bag
The first nmos pass transistor and the second nmos pass transistor are included, the drain electrode of first nmos pass transistor connects the source and follows transistor
Source electrode, source electrode connection first node, grid by the 3rd capacitance connection to ground terminal, the source electrode of second nmos pass transistor connects
Ground, the drain electrode connection first node, grid connects the supply voltage that the source follows transistor.
The noise-cancellation circuit of 12. imageing sensors according to claim 11, it is characterised in that the proportion adjustment mould
Block includes the 3rd nmos pass transistor, and the drain electrode of the 3rd nmos pass transistor connects the first node, source ground end, grid
Connection Section Point, source described in the voltage-regulation of the regulation Section Point follows the mutual conductance of transistor, and the 3rd NMOS is brilliant
Body pipe is used to stablize the operating current of first nmos pass transistor.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108234727A (en) * | 2017-11-29 | 2018-06-29 | 维沃移动通信有限公司 | A kind of noise-reduction method and mobile terminal |
| CN112188125A (en) * | 2020-10-13 | 2021-01-05 | 成都微光集电科技有限公司 | Noise cancellation circuit and image sensor |
| CN114356012A (en) * | 2021-12-31 | 2022-04-15 | 龙迅半导体（合肥）股份有限公司 | Circuit |
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| CN101471625A (en) * | 2007-12-26 | 2009-07-01 | 联发科技股份有限公司 | Amplifier and the method thereof |
| CN104967793A (en) * | 2015-07-28 | 2015-10-07 | 格科微电子（上海）有限公司 | Power supply noise canceling circuit suitable for CMOS image sensor |
| CN205071168U (en) * | 2015-07-28 | 2016-03-02 | 格科微电子（上海）有限公司 | Power noise cancellation circuit suitable for CMOS image sensor |
| CN206472215U (en) * | 2016-12-28 | 2017-09-05 | 格科微电子（上海）有限公司 | The noise-cancellation circuit of imaging sensor |
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| CN108234727A (en) * | 2017-11-29 | 2018-06-29 | 维沃移动通信有限公司 | A kind of noise-reduction method and mobile terminal |
| CN112188125A (en) * | 2020-10-13 | 2021-01-05 | 成都微光集电科技有限公司 | Noise cancellation circuit and image sensor |
| CN112188125B (en) * | 2020-10-13 | 2023-02-17 | 成都微光集电科技有限公司 | Noise cancellation circuit and image sensor |
| CN114356012A (en) * | 2021-12-31 | 2022-04-15 | 龙迅半导体（合肥）股份有限公司 | Circuit |
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