CN106788405A - The charge pump circuit and phase-locked loop circuit of capacitor electric leakage compensation - Google Patents
The charge pump circuit and phase-locked loop circuit of capacitor electric leakage compensation Download PDFInfo
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- CN106788405A CN106788405A CN201611075506.4A CN201611075506A CN106788405A CN 106788405 A CN106788405 A CN 106788405A CN 201611075506 A CN201611075506 A CN 201611075506A CN 106788405 A CN106788405 A CN 106788405A
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- 239000003990 capacitor Substances 0.000 title claims abstract description 44
- 230000005611 electricity Effects 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 239000004243 E-number Substances 0.000 claims 1
- 235000019227 E-number Nutrition 0.000 claims 1
- 238000000034 method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000001914 filtration Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 240000002853 Nelumbo nucifera Species 0.000 description 2
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 2
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/085—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal
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Abstract
The charge pump circuit compensated the invention discloses a kind of electric leakage of capacitor and the phase-locked loop circuit including the charge pump circuit,The charge pump circuit includes the first current source,Second current source,First switch,Second switch,The filter unit of capacitor,The first control signal for controlling first switch,And for controlling the second control signal of second switch,Wherein,First current source,First switch,Second switch,Second current source is sequentially connected in series,The filter unit of the capacitor in parallel between the common intersection of first switch and second switch and the negative terminal of the second current source,The current signal of current source is converted to voltage signal and the common intersection output for passing through first switch and second switch by the filter unit,Also include current compensation unit,The current compensation unit produces compensation electric current for compensating the leakage current of the electric capacity in the filter unit.The present invention can be compensated to the capacity fall off electric current of the wave filter in charge pump.
Description
Technical field
The present invention relates to a kind of phaselocked loop, the charge pump circuit of more particularly to a kind of capacitor electric leakage compensation and using the electricity
The phase-locked loop circuit of lotus pump circuit.
Background technology
Phaselocked loop (Phase Locked Loop, PLL), including charge pump.Low pass filter is provided with charge pump, its
Purpose is that the pulsed current signal that charge pump is exported is converted into stable voltage signal.As shown in figure 1, filtering conventional at present
Device, including by a resistance and the series circuit of an electric capacity, and the series circuit two ends in parallel high-frequency filter capacitor.Its
The resistance and electric capacity of middle series connection play a part of to integrate current signal, and the high-frequency filter capacitor is played and filters high-frequency noise and electricity
Emboss the effect of ripple.
In semiconductor fabrication process, in whole PLL domains, electric capacity will occupy larger area ratio, therefore select
Suitable electric capacity will directly determine the area competitiveness of PLL.Conventional capacity type have MIM capacitor, MOM capacitor, mos capacitance and
VAR electric capacity etc..Wherein, in presently used technique, VAR has a maximum unit-area capacitance value, therefore from area angle
Consider, VAR electric capacity is most desirable.But, electric capacity two ends, with the presence of leakage current, can cause electric capacity to VAR when in use in current technique
The loss of the upper quantity of electric charge, and then make the output frequency of PLL have larger shake (jitter), even causes the PLL cannot when serious
Locking, loses the function having.
As shown in Fig. 2 the leakage current I at VAR electric capacity two endsleakSize is approximately a square pass with the voltage at electric capacity two ends
System.Wherein, abscissa is voltage signal VC, and ordinate is leakage current IleakSignal.In addition, for mos capacitance or other electricity
Container, it is also possible to have the presence of leaky.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of charge pump circuit of capacitor electric leakage compensation, with to electricity
The capacity fall off electric current of the wave filter in lotus pump is compensated.
In order to solve the above-mentioned technical problem, the technical scheme is that：A kind of charge pump electricity of capacitor electric leakage compensation
Road, including the first current source, the second current source, first switch, second switch, the filter unit of capacitor, for controlling first
First control signal of switch, and for controlling the second control signal of second switch, wherein, the first current source, first open
Pass, second switch, the second current source are sequentially connected in series, the negative terminal of the common intersection of first switch and second switch and the second current source
Between the in parallel capacitor filter unit, the current signal of current source is converted to voltage signal and passed through by the filter unit
The common intersection output of first switch and second switch, also including current compensation unit, the current compensation unit produces compensation electricity
Flow the leakage current for compensating the electric capacity in the filter unit.
Further, the charge pump circuit of the capacitor electric leakage compensation that the present invention is provided, the current compensation unit includes
The current mirroring circuit and third transistor being made up of the first transistor and transistor seconds, the grid of the first transistor and the second crystalline substance
The grid electrical connection of body pipe, anode of the source electrode of the first transistor with the source electrode of transistor seconds with the first current source is electrically connected
Connect, be connected with the common intersection of first switch and second switch after the drain electrode of the first transistor and the grid short circuit of third transistor
Connect, be connected with the drain electrode of third transistor after the grid of transistor seconds, drain electrode short circuit, the source electrode of third transistor and second electric
The negative terminal connection in stream source；When 0<VC<VthnOr VC>VthnWhen, the compensation electric current that third transistor is produced is injected into filter unit
In, compensated by the leakage current that the electric capacity two ends in unit produce with to the filter with electric capacity；Wherein, VthnIt is the 3rd crystal
The threshold voltage of pipe, VCIt is the voltage signal of filter unit output.
Further, the charge pump circuit of the capacitor electric leakage compensation that the present invention is provided, when 0<VC<VthnWhen, the 3rd crystal
The compensation electric current I that pipe is producedcomFor
Wherein, IdoIt is constant, W and L is respectively the wide of third transistor raceway groove and length, and k is Boltzmann constant, and T is exhausted
To temperature, the quantity of electric charge of q electronics, VdsIt is the drain-source voltage of third transistor, exp () is the index as bottom with natural constant e
Function.
Further, the charge pump circuit of the capacitor electric leakage compensation that the present invention is provided, works as VC>VthnWhen, third transistor
The compensation electric current I of generationcomFor
Wherein, W and L are respectively the wide of third transistor raceway groove and long, μnIt is the mobility of electronics in raceway groove, CoxIt is grid oxygen
Capacitance coefficient.
Further, the charge pump circuit of the capacitor electric leakage compensation that the present invention is provided, the first transistor and described
Transistor seconds is P-type transistor, and the third transistor is N-type transistor.
Further, the charge pump circuit of the capacitor electric leakage compensation that the present invention is provided, the filter unit is by one
The series circuit that resistance and an electric capacity are constituted, and it is connected in parallel on the high-frequency filter capacitor in the series circuit.
Further, the charge pump circuit of the capacitor electric leakage compensation that the present invention is provided, the electric capacity in the filter unit
It is any one in VAR electric capacity, mos capacitance, MOM capacitor, MIM capacitor.
The present invention also provides a kind of phase-locked loop circuit, is mended with the capacity fall off electric current to the wave filter in charge pump
Repay, including the loop being made up of phase frequency detector, charge pump, wave filter, voltage controlled oscillator and frequency divider successively, the charge pump
Using above-mentioned charge pump circuit.
Further, the phase-locked loop circuit that the present invention is provided, the front end of the phase frequency detector is provided with input frequency divider；
The output end of the voltage controlled oscillator VCO is provided with output frequency divider.
Further, the phase-locked loop circuit that the present invention is provided, first control signal and second control signal are
The output signal of the phase frequency detector in phaselocked loop.
The charge pump circuit and phase-locked loop circuit of the capacitor electric leakage compensation that the present invention is provided, work as charge pump circuit functions
When, because the two ends of the electric capacity in filter unit have voltage difference, the two ends of electric capacity will produce leakage current, then reduce electric charge
The current signal of pump circuit output, it is because filter unit is that current signal is converted into voltage signal output, then single after filtering
The voltage signal of unit's conversion is also reduced.Based on this, the present invention is provided with current compensation unit in traditional charge pump circuit,
The leakage current of the electric capacity to produce compensation electric current to be used in compensation filter unit, so that the voltage letter of cell translation after filtering
Number also improve, so as to improve the stability of phase-locked loop circuit.
Brief description of the drawings
Fig. 1 is the circuit theory diagrams of the wave filter in existing PLL；
Fig. 2 is the fax oscillogram of the leakage current of the electric capacity two ends generation of the wave filter in existing PLL；
Fig. 3 is the circuit theory diagrams of the charge pump in PLL of the invention；
Fig. 4 is the fax contrast oscillogram of the leakage current for compensating the electric capacity two ends in electric current and wave filter；
Fig. 5 is the frame principle figure of the PPL circuits of one embodiment of the invention.
Specific embodiment
The present invention is described in detail below in conjunction with the accompanying drawings：
Embodiment one
As shown in figure 3, the present embodiment one provides a kind of charge pump circuit of capacitor electric leakage compensation, including the first current source
Icp1, the second current source Icp2, first switch S1, second switch S2, the filter unit LPF of capacitor, also including for controlling
The first control signal UP of first switch S1, and for controlling the second control signal DN of second switch S2, wherein, the first electricity
Stream source Icp1, first switch S1, second switch S2, the second current source Icp2 are sequentially connected in series, first switch S1 and second switch S2
Common intersection and the negative terminal of the second current source Icp2 between the capacitor in parallel filter unit LPF, the filter unit LPF
The current signal of current source is converted into voltage signal VCAnd the common intersection by first switch S1 and second switch S2 is exported,
Also include that current compensation unit CC (Current Compensation), current compensation unit CC produce compensation electric current for mending
Repay the leakage current of the electric capacity in the filter unit LPF.
As shown in figure 3, as preferably implementation method, the charge pump electricity of the capacitor electric leakage compensation that the present embodiment one is provided
Road, the current compensation unit CC includes the current mirroring circuit being made up of the first transistor T1 and transistor seconds T2 and the 3rd crystalline substance
Body pipe T3, wherein, the grid of the first transistor T1 is electrically connected with the grid of transistor seconds T2, the source electrode of the first transistor T1 with
Anode of the source electrode of transistor seconds T2 with the first current source Icp1 is electrically connected, the drain electrode of the first transistor T1 and the 3rd crystal
It is connected with the common intersection of first switch S1 and second switch S2 after the grid short circuit of pipe T3, the grid of transistor seconds T2,
It is connected with the drain electrode of third transistor T3 after drain electrode short circuit, the negative terminal of the source electrode of third transistor T3 and the second current source Icp2 connects
Connect；When 0<VC<VthnOr VC>VthnWhen, the compensation electric current that third transistor T3 is produced is injected into filter unit LPF, with to band
The filter for having electric capacity is compensated by the leakage current that the electric capacity two ends in unit produce；Wherein, VthnIt is the threshold value of third transistor T3
Voltage, VCIt is the voltage signal of filter unit output.Wherein, the first transistor T1 and the transistor seconds T2 are P
Transistor npn npn, the third transistor T3 is N-type transistor.
As preferably implementation method, the charge pump circuit of the capacitor electric leakage compensation that the present embodiment one is provided, the filter
Ripple unit LPF is the series circuit being made up of a resistance R and an electric capacity C0, and is connected in parallel on the high frequency in the series circuit
Filter capacitor C1.The resistance R and electric capacity C0 for wherein connecting primarily serve the effect for integrating current signal, and electric capacity C1 is played and filtered
The effect of high-frequency noise and voltage ripple.The filter unit LPF of example is the low pass filter of second order in the present embodiment one, but in
The low pass filter of the second order is not limited, and the wave filter that can also be for example constituted using only one electric capacity is connected in parallel on first switch S1
And the common intersection of second switch S2 and the negative terminal of the second current source Icp2 between.
As preferably implementation method, the charge pump circuit of the capacitor electric leakage compensation that the present embodiment one is provided, the filter
Electric capacity in ripple unit LPF is VAR electric capacity (varactor variable capacitance, Varactor), MOS (Metal-oxide-semicondutor,
Metal-Oxide-Semiconductor) electric capacity, MOM (metal-oxide-metal metal-oxide-metal) electric capacity, MIM
Any one in (metal-insulator-metal type Metal-Insulator-Metal, MIM) electric capacity.
In the present embodiment one, when charge pump circuit functions, because there is voltage in the two ends of the electric capacity in filter unit LPF
Difference, the two ends of electric capacity will produce leakage current, the current signal of charge pump circuit output be reduced, because filter unit LPF is
Current signal is converted into voltage signal VCOutput, then the voltage signal V that unit LPF is changed after filteringCAlso reduce.For
For electric capacity C1, voltage difference is the voltage signal V of outputC, for electric capacity C0, voltage difference is approximately voltage signal VC, then it is electric
Hold C1 and/or C0 leakies of itself and result in voltage signal VCReduction.Below by taking the leakage current at electric capacity C1 two ends as an example
Describe in detail, as shown in Fig. 2 the leakage current I at electric capacity C1 two endsleakWith voltage signal VCIncrease and increase, electric capacity C1 two ends
Leakage current IleakWith voltage signal VCThe relation being approximately square.Due to voltage signal VCIn connection current compensation circuit the 3rd
The grid of transistor T3, as voltage signal VCWhen relatively low, third transistor T3 is in cut-off region, the drain terminal electricity of third transistor T3
Stream IcomEssentially 0.
When 0<VC<VthnWhen, the drain current I that third transistor T3 is producedcomIt is compensation electric current IcomFor
Wherein, IdoIt is constant, W and L is respectively the wide of third transistor raceway groove and length, and k is Boltzmann constant, and T is exhausted
To temperature, the quantity of electric charge of q electronics, VdsIt is the drain-source voltage of third transistor, exp () is the index as bottom with natural constant e
Function.Understood with reference to above-mentioned formula and Fig. 4, the drain current I of third transistor T3comWith voltage signal VCIt is approximate square
Relation, so as to the leakage current to electric capacity C1 two ends is compensated.
Work as VC>VthnWhen, the drain current I that third transistor T3 is producedcomIt is compensation electric current IcomFor
Wherein, W and L are respectively the wide of third transistor raceway groove and long, μnIt is the mobility of electronics in raceway groove, CoxIt is grid oxygen
The ratio of capacitance coefficient, specially grid oxygen dielectric constant and gate oxide thickness.
Now, understood with reference to above-mentioned formula and Fig. 4, the drain current I of third transistor T3comWith voltage signal VCAlso it is
Approximate square of relation, so as to the leakage current to electric capacity C1 two ends is compensated.
It follows that the drain current I of third transistor T3comAlso with voltage signal VCIncrease and increase.Then pass through
The effect of the current mirror that the first transistor T1 and transistor seconds T2 is constituted, by the drain current I of third transistor T3comInjection
To the voltage signal V of filter unit LPFCEnd, that is, be injected into the common intersection of first switch S1 and second switch S2, now, the
The drain current I of three transistor T3comElectric capacity C1 in filter unit LPF is charged, so as to electric capacity C1, the leakage current of itself rises
To certain compensating action.By Fig. 4 it can also be seen that, electric capacity C1 two ends produce leakage current IleakProduced with current compensation unit CC
Raw compensation electric current IcomApproximately equal, so as to carry out electric current to the electric capacity C1 in filter unit LPF by current compensation unit CC
Compensation.
In the present embodiment one, the need for circuit is designed, the 3rd can be appropriately arranged with semiconductor fabrication process brilliant
Body pipe T3 sizes, the drain current I of third transistor T3 can be obtained by emulationcomWith voltage signal VCRelation curve.
The present invention is provided with current compensation unit CC in traditional charge pump circuit, to produce compensation electric current IcomFor
The leakage current I of the electric capacity in compensation filter unitleak, so that the voltage signal V of unit LPF conversions after filteringCAlso improve
, so as to improve the stability of phase-locked loop circuit.In the present embodiment one, electric current I is compensatedcomWith by current mirroring circuit
First and second transistor T1, T2 charges to electric capacity C1, so as to serve the effect of current compensation.
Embodiment two
As shown in figure 5, the present embodiment two provides a kind of phase-locked loop circuit of the charge pump circuit based on embodiment one, including
The ring being made up of phase frequency detector PFD, charge pump CP, wave filter LPF, voltage controlled oscillator VCO and frequency divider MDivider successively
Road, the charge pump CP is using the charge pump circuit described in embodiment one.As shown in figure 3, in the present embodiment two, first control
Signal UP processed and the second control signal DN is the output signal of the phase frequency detector PFD in phaselocked loop.
As shown in figure 5, the phase-locked loop circuit that the present embodiment two is provided, the front end of the phase frequency detector PFD is provided with defeated
Enter frequency divider NDivider；The output end of the voltage controlled oscillator VCO is provided with output frequency divider ODivider.Wherein, CLK_
REF is the input signal for being input into frequency divider NDivider, and FVcc is the output signal of voltage controlled oscillator VCO, and Fback shakes for voltage-controlled
Swing feedback signal that the divided device MDivider of output signal of device VCO obtains and input to phase frequency detector PFD；PLL_OUT
It is the output signal of phase-locked loop circuit.
The phase-locked loop circuit of the present embodiment two, overcome brought using traditional charge pump circuit in phase-locked loop circuit it is defeated
Going out frequency has larger shake and the problem that cannot be locked, and improves the stability and precision of phase-locked loop circuit.
The invention is not restricted to above-mentioned specific embodiment, such as the charge pump electricity of the capacitor electric leakage compensation in embodiment one
Road can also be applied in other circuits.All various changes done within the spirit and scope of the present invention are of the invention
Within protection domain.
Claims (10)
1. the charge pump circuit that a kind of capacitor electric leakage is compensated, including the first current source, the second current source, first switch, second
Switch, the filter unit of capacitor, the first control signal for controlling first switch, and for controlling the of second switch
Two control signals, wherein, the first current source, first switch, second switch, the second current source are sequentially connected in series, first switch and
The filter unit of the capacitor in parallel between the common intersections and the negative terminal of the second current source of two switches, the filter unit is by electricity
The current signal in stream source is converted to voltage signal and the common intersection by first switch and second switch is exported, and its feature exists
In also including current compensation unit, the current compensation unit produces compensation electric current for compensating the electric capacity in the filter unit
Leakage current.
2. the charge pump circuit that capacitor electric leakage as claimed in claim 1 is compensated, it is characterised in that the current compensation unit
Including the current mirroring circuit being made up of the first transistor and transistor seconds and third transistor；The grid of the first transistor and
The grid electrical connection of two-transistor, anode of the source electrode of the first transistor with the source electrode of transistor seconds with the first current source is electric
Connection, with first switch and the common intersection phase of second switch after the drain electrode of the first transistor and the grid short circuit of third transistor
Connection, is connected, the source electrode of third transistor and second after grid, the drain electrode short circuit of transistor seconds with the drain electrode of third transistor
The negative terminal connection of current source；When 0<VC<VthnOr VC>VthnWhen, the compensation electric current that third transistor is produced is injected into filter unit
In, compensated by the leakage current that the electric capacity two ends in unit produce with to the filter with electric capacity；Wherein, VthnIt is the 3rd crystal
The threshold voltage of pipe, VCIt is the voltage signal of filter unit output.
3. the charge pump circuit that capacitor electric leakage as claimed in claim 2 is compensated, it is characterised in that when 0<VC<VthnWhen, the
The compensation electric current I that three transistors are producedcomFor
Wherein, IdoIt is constant, W and L is respectively the wide of third transistor raceway groove and length, and k is Boltzmann constant, and T is definitely warm
Degree, the quantity of electric charge of q electronics, VdsIt is the drain-source voltage of third transistor, exp () is the index letter as bottom with natural constant e
Number.
4. the charge pump circuit that capacitor electric leakage as claimed in claim 2 is compensated, it is characterised in that work as VC>VthnWhen, the 3rd is brilliant
The compensation electric current I that body pipe is producedcomFor
Wherein, W and L are respectively the wide of third transistor raceway groove and long, μnIt is the mobility of electronics in raceway groove, CoxIt is grid oxygen electric capacity
Coefficient.
5. the charge pump circuit of capacitor as claimed in claim 2 electric leakage compensation, it is characterised in that the first transistor and
The transistor seconds is P-type transistor, and the third transistor is N-type transistor.
6. the charge pump circuit that capacitor electric leakage as claimed in claim 1 is compensated, it is characterised in that the filter unit is served as reasons
The series circuit that one resistance and an electric capacity are constituted, and it is connected in parallel on the high-frequency filter capacitor in the series circuit.
7. the charge pump circuit that capacitor electric leakage as claimed in claim 1 is compensated, it is characterised in that in the filter unit
Electric capacity is any one in VAR electric capacity, mos capacitance, MOM capacitor, MIM capacitor.
8. a kind of phase-locked loop circuit, including successively by phase frequency detector, charge pump, wave filter, voltage controlled oscillator and frequency divider structure
Into loop, it is characterised in that the charge pump is using charge pump circuit as any one of claim 1-7.
9. phase-locked loop circuit as claimed in claim 8, it is characterised in that first control signal and second control
Signal is the output signal of the phase frequency detector in phaselocked loop.
10. phase-locked loop circuit as claimed in claim 8, it is characterised in that the front end of the phase frequency detector is provided with input
Frequency divider；The output end of the voltage controlled oscillator is provided with output frequency divider.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611075506.4A CN106788405A (en) | 2016-11-30 | 2016-11-30 | The charge pump circuit and phase-locked loop circuit of capacitor electric leakage compensation |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611075506.4A CN106788405A (en) | 2016-11-30 | 2016-11-30 | The charge pump circuit and phase-locked loop circuit of capacitor electric leakage compensation |
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| CN107769545A (en) * | 2017-11-09 | 2018-03-06 | 上海华力微电子有限公司 | A kind of charge pump circuit for being used for capacitor electric leakage compensation in PLL |
| CN108988854A (en) * | 2018-07-04 | 2018-12-11 | 西安电子科技大学 | Phase-locked loop circuit |
| CN110061739A (en) * | 2019-05-20 | 2019-07-26 | 长沙景美集成电路设计有限公司 | The PLL circuit and its implementation that a kind of pair of technique causes mos capacitance electric leakage of the grid insensitive |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107769545A (en) * | 2017-11-09 | 2018-03-06 | 上海华力微电子有限公司 | A kind of charge pump circuit for being used for capacitor electric leakage compensation in PLL |
| CN108988854A (en) * | 2018-07-04 | 2018-12-11 | 西安电子科技大学 | Phase-locked loop circuit |
| CN110061739A (en) * | 2019-05-20 | 2019-07-26 | 长沙景美集成电路设计有限公司 | The PLL circuit and its implementation that a kind of pair of technique causes mos capacitance electric leakage of the grid insensitive |
| CN110061739B (en) * | 2019-05-20 | 2023-12-01 | 长沙景美集成电路设计有限公司 | PLL circuit insensitive to MOS capacitor grid leakage caused by process |
| CN113054963A (en) * | 2021-03-29 | 2021-06-29 | 普源精电科技股份有限公司 | Switching circuit, chip and signal processing device |
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