CN113054963A - Switching circuit, chip and signal processing device - Google Patents
Switching circuit, chip and signal processing device Download PDFInfo
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Abstract
The embodiment of the invention discloses a switch circuit, a chip and a signal processing device, wherein the switch circuit comprises: the switch module comprises a switch input end and a switch output end, and the switch module selectively conducts the switch input end and the switch output end so as to transmit a signal at the switch input end to the switch output end; and the electric leakage compensation module is used for providing a compensation signal to the switch output end according to the electric leakage characteristic of the switch module. The embodiment of the invention can prevent the signal distortion at the output end of the switch circuit and improve the accuracy of the signal transmitted by the switch circuit.
Description
Technical Field
The embodiment of the invention relates to the technical field of integrated circuits, in particular to a switch circuit, a chip and a signal processing device.
Background
With the development of electronic information technology, the forms of switches are diversified, and the switches can be divided into mechanical switches and electronic control switches from the aspect of control types; the electronic control switch may include a semiconductor switch (e.g., a MOS transistor, a triode, etc.), a relay switch, and the like. The switch is normally in both an on state and an off state, and when the switch is in the on state, the switch allows an electrical signal to be transmitted from one end of the switch to the other end thereof, and when the switch is in the off state, the switch prevents the electrical signal from being transmitted from one end of the switch to the other end thereof.
In the prior art, a switching element applied to an integrated circuit is generally a single MOS transistor or a semiconductor device such as a triode, and the purpose of switching on and off of the circuit is achieved by controlling the formation of a conductive channel through a gate. However, the switch is in an on state or an off state, and there is a corresponding leakage, and the leakage is injected into a circuit network connected to the switch through the switch, so that the signal received by the circuit network is inaccurate, the precision of the circuit network is affected, and even a signal transmission error is caused.
Disclosure of Invention
In view of the above problems, embodiments of the present invention provide a switching circuit, a chip, and a signal processing apparatus, so as to perform leakage compensation on a switching module, thereby improving the accuracy of the switching circuit in signal transmission.
In a first aspect, an embodiment of the present invention provides a switching circuit, including:
the switch module comprises a switch input end and a switch output end, and the switch module selectively conducts the switch input end and the switch output end so as to transmit a signal of the switch input end to the switch output end;
and the electric leakage compensation module is used for providing a compensation signal to the switch output end according to the electric leakage characteristic of the switch module.
In a second aspect, an embodiment of the present invention further provides a chip, including: the switching circuit is described above.
In a third aspect, an embodiment of the present invention further provides a signal processing apparatus, including: the chip is described above.
According to the switching circuit, the chip and the signal processing device provided by the embodiment of the invention, the leakage compensation module is arranged, and the leakage characteristic of the switching module is obtained by adopting the leakage compensation module, so that the corresponding compensation signal is provided to the switch output end of the switching module according to the leakage characteristic, and therefore, the signal distortion of the switch output end caused by the leakage characteristic of the switching module can be prevented, and the accuracy of the transmitted signal of the switching circuit is improved.
Drawings
Fig. 1 is a schematic structural diagram of a switching circuit according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a switch circuit according to another embodiment of the present invention;
fig. 3 is a schematic diagram of a specific circuit structure of a switching circuit according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a specific circuit structure of another switching circuit according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a switch circuit according to another embodiment of the present invention;
fig. 6 is a schematic structural diagram of another switching circuit according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Embodiments of the present invention provide a switching circuit, which can have higher signal transmission accuracy, and the switching circuit can be integrated in a chip, and the chip can be disposed in a signal processing device, which includes but is not limited to an oscilloscope.
Fig. 1 is a schematic structural diagram of a switching circuit according to an embodiment of the present invention. As shown In fig. 1, the switch module 10 of the switch circuit includes a switch input terminal In10 and a switch output terminal Out10, and the switch module 10 is configured to selectively turn on the switch input terminal In10 and the switch output terminal Out10 to transmit a signal Vin at the switch input terminal In10 to the switch output terminal Out 10; the leakage compensation module 20 is configured to provide a compensation signal to the switch output Out10 according to the leakage characteristic of the switch module 10.
Specifically, the switch module 10 can at least realize a basic on-off function, and the switch module 10 may be, for example, a single MOS transistor or a triode that can only realize the basic on-off function, a single-pole multi-throw switch composed of a plurality of MOS transistors or triodes that can realize multiple cooperative functions, or a corresponding switch array; the leakage compensation module 20 is configured to provide a corresponding compensation signal to the switching output Out10 of the switching module 10 according to the leakage characteristic of the switching module 10. There are many ways to obtain the leakage characteristics of the switch module 10, and the embodiment of the present invention is not limited thereto.
The leakage characteristic of the switch module 10 may be any performance that affects the accuracy of signal transmission due to the switch module 10, for example, the leakage current of the switch module 10 itself; at this time, the compensation signal provided by the leakage compensation module 20 may be a compensation current provided according to the leakage current of the switch module 10.
For example, when the switch module 10 transmits the signal Vin at the switch input terminal In10 to the switch output terminal Out10 thereof, the signal Vin may cause distortion of the signal output at the switch output terminal Out10 of the switch module 10 due to the leakage current of the switch module 10 during the transmission In the switch module 10; at this time, the leakage compensation module 20 provides a corresponding compensation signal according to the leakage current of the switch module 10, so that the signal Vout at the switch output terminal Out10 can be the sum of the signal output via the switch output terminal Out10 and the compensation signal provided by the leakage compensation module 20, so that the signal Vout at the switch output terminal Out10 compensated by the compensation signal provided by the leakage compensation module 20 can be unrelated to the leakage characteristic of the switch module 10, or the fluctuation generated by the leakage characteristic of the switch module 10 in the signal Vout at the switch output terminal Out10 compensated by the compensation signal provided by the leakage compensation module 20 can be ignored, thereby improving the accuracy of the signal transmitted by the switch circuit.
It is understood that the specific implementation manner of the switching module 10 and the leakage compensation module 20 is related to the functions to be implemented by themselves, and those skilled in the art can set the implementation manner according to the actual situation, and the implementation manner is not limited herein.
It should be noted that, the connection relationship between modules and the specific structure of each module in the switch circuit provided in the embodiment of the present invention have various implementations, and the following exemplary description of the embodiment of the present invention is provided with reference to a typical example, but the present invention is not limited to the specific example.
Optionally, fig. 2 is a schematic structural diagram of another switching circuit provided in an embodiment of the present invention. As shown in fig. 2, when the leakage characteristic of the switching module 10 includes the leakage current, the leakage compensation module 20 of the switching circuit includes a leakage characteristic processing unit 21 and a current compensation unit 22; the leakage characteristic processing unit 21 is electrically connected to the current compensation unit 22; the leakage characteristic processing unit 21 is configured to generate an equivalent leakage current that is the same as or in a preset proportion to the leakage current of the switch module 10; the current compensation unit 22 is configured to output a compensation current to the switch output terminal Out10 according to the equivalent leakage current.
Specifically, when the leakage characteristic processing unit 21 generates an equivalent current equal to the leakage current of the switch module 10, the current compensation unit 22 may directly compensate the equivalent current as a compensation current to the switch output terminal Out10, so that the signal Vout at the switch output terminal Out10 of the switch module 10 is independent of the leakage current of the switch module 10; when the leakage characteristic processing unit 21 generates an equivalent current in a predetermined ratio to the leakage current of the switch module 10, the current compensation unit 22 may scale the equivalent current and convert the scaled equivalent current into a compensation current, and provide the compensation current to the switch output terminal Out10, so as to reduce the influence of the leakage current of the switch module 10 on the signal Vout at the switch output terminal Out10 of the switch module 10, thereby improving the accuracy of the signal transmitted by the switch circuit.
It is to be understood that the leakage characteristic processing unit 21 may be a switch having the same structure and the same electrical environment as the switch module 10; alternatively, the leakage characteristic processing unit 21 may be a switch having the same electrical environment as the switch module 10 but having a difference in structure and/or size; alternatively, on the premise that the leakage characteristic processing unit 21 can generate an equivalent current that is the same as or in a predetermined ratio to the leakage current of the switch module 10, the leakage characteristic processing unit 21 may also have other structures that can be conceived by those skilled in the art, and is not specifically limited herein.
Optionally, when the switch module includes at least one switch transistor, the gates of the switch transistors receive the same or different switch control signals; the leakage characteristic processing unit comprises at least one leakage processing transistor; the total leakage current of the at least one leakage processing transistor is the same as the total leakage current of the at least one switching transistor; or the total leakage current of the at least one leakage processing transistor is in a preset proportion to the total leakage current of the at least one switching transistor.
For example, fig. 3 is a schematic diagram of a specific circuit structure of a switching circuit according to an embodiment of the present invention. As shown in fig. 3, when the switch module 10 includes one switch transistor M10, the leakage characteristic processing unit 21 may also include one leakage processing transistor M21. If the switch transistor M10 and the leakage processing transistor M21 have the same structure, and the gate of the switch transistor M10 and the control signal Vg1 received by the gate of the leakage processing transistor M21 are the same, the switch transistor M10 and the leakage processing transistor M21 have the same electrical environment, so that the leakage current of the leakage processing transistor M21 can be the same as the leakage current of the switch transistor M10; by outputting the leakage current generated by the leakage processing transistor M21 to the current compensation unit 22, the current compensation unit 22 can provide a corresponding compensation signal to the switch output terminal Out10 according to the leakage current generated by the leakage processing transistor M21, so that the signal at the switch output terminal Out10 can be independent of the leakage current of the switch transistor M10, or the influence of the leakage current of the switch transistor M10 on the switch output terminal Out10 is reduced, thereby improving the accuracy of the signal transmitted by the switch circuit.
It should be noted that fig. 3 is a diagram illustrating an embodiment of the present invention, and fig. 3 illustrates a switch module 10 including at least one switch transistor; however, in the embodiment of the present invention, each switch module may include one, two, or more switch transistors, and the number of the switch transistors of the switch module is not particularly limited in the embodiment of the present invention.
Optionally, fig. 4 is a schematic diagram of a specific circuit structure of another switching circuit provided in the embodiment of the present invention. As shown in fig. 4, the at least one switching transistor of the switching module 10 includes a first switching transistor M11 and a second switching transistor M12; a first pole of the first switching transistor M11 and a first pole of the second switching transistor M12 are both electrically connected to the switching input terminal In 10; a second pole of the first switching transistor M11 is grounded, and a second pole of the second switching transistor M12 is electrically connected to the switch output terminal Out 10; the gate of the first switch transistor M11 receives a first switch control signal Vg11, and the gate of the second switch transistor M12 receives a second switch control signal Vg 12; at this time, the first switching transistor M11 may be controlled to be turned on or off by the first switch control signal Vg11, and the second switching transistor M12 may be controlled to be turned on or off by the second switch control signal Vg 12.
Accordingly, the at least one leakage processing transistor of the leakage characteristic processing unit 21 includes a first leakage processing transistor M211 and a second leakage processing transistor M212; a first pole of the first leakage processing transistor M211 is electrically connected to a first pole of the second leakage processing transistor M212, a second pole of the first leakage processing transistor M211 is grounded, and a second pole of the second leakage processing transistor M212 is electrically connected to the input terminal of the current compensation unit 22; the gate of the first leakage processing transistor M211 receives a first switch control signal Vg11, and the gate of the second leakage processing transistor M212 receives a second switch control signal Vg 12; the output terminal of the current compensation unit 22 is electrically connected with the switch output terminal Out 10; the first leakage processing transistor M211 and the first switch transistor M11 have the same structure, and the second leakage processing transistor M212 and the second switch transistor M12 have the same structure.
Specifically, when the first switching transistor M11 is turned on under the control of the first switch control signal Vg11, the switch input terminal In10 is grounded through the turned-on first switching transistor M11; when the second switch transistor M12 is turned on under the control of the second switch control signal Vg12, the switch input terminal In10 forms a signal transmission path with the switch output terminal Out10 through the turned-on second switch transistor M12. In this manner, when the first switching transistor M11 and the second switching transistor M12 are turned on in a time-sharing manner, that is, the first switching transistor M11 is turned on, the second switching transistor M12 is turned off, or when the second switching transistor M12 is turned on, the first transistor M11 is turned off, thereby allowing the first switching transistor M11 and the second switching transistor M12 to function as a single-pole double-throw switch.
Meanwhile, when the switch module 10 includes the first and second switching transistors M11 and M12, the leakage characteristic processing unit 21 may include the first and second leakage processing transistors M211 and M212, and the first leakage processing transistor M211 and the first switching transistor M11 have the same electrical environment and the same structure, so that the first leakage processing transistor M211 can generate the same equivalent leakage current as that of the first switching transistor M11; the second leakage processing transistor M212 has the same electrical environment and the same structure as the second switching transistor M12, so that the second leakage processing transistor M212 can generate the same equivalent leakage current as that of the second switching transistor M12. In this way, the equivalent leakage current generated by the first leakage processing transistor M211 and the equivalent leakage current generated by the second leakage processing transistor M212 are input to the current compensation unit 22, so that the current compensation unit provides the total equivalent leakage current generated by the first leakage processing transistor M211 and the second leakage processing transistor M212 as a compensation current to the switch output terminal Out10 to compensate the signal at the switch output terminal Out10, thereby improving the accuracy of the signal transmitted by the switch circuit.
The channel types of the first switching transistor M11 and the second switching transistor M12 of the switching module 10 may be the same or different. When the channel types of the first switch transistor M11 and the second switch transistor M12 in the switch module 10 are the same, the first switch control signal Vg11 received by the gate of the first switch transistor M11 and the second switch control signal Vg12 received by the gate of the second switch transistor M12 are different switch control signals, so that the first switch transistor M11 and the second switch transistor M12 are not turned on at the same time. Alternatively, when the channel types of the first switching transistor M11 and the second switching transistor M12 of the switch module 10 are different, for example, the first switching transistor M11 is an N-type transistor, and the second switching transistor M12 is a P-type transistor; since the N-type transistor is turned on when the switch control signal received by the gate thereof is at a high level and turned off when the switch control signal received by the gate thereof is at a low level, and the P-type transistor is turned on when the switch control signal received by the gate thereof is at a low level and turned off when the switch control signal received by the gate thereof is at a high level, the first switch control signal Vg11 received by the gate of the first switch transistor M11 of the switch module 10 can be multiplexed into the second switch control signal Vg12 received by the gate of the second switch transistor M12; at this time, when the first switch control signal Vg11 is low, the first switch transistor M11 is turned off and the second switch transistor M12 is turned on, while the first switch control signal Vg1 is high, the second transistor M2 is turned off. So, only need provide a switch control signal for switch module 10, can make first switch transistor M11 and second switch transistor M12 not switch on simultaneously to can reduce the quantity of the switch control signal who provides to switch module 10, thereby be favorable to reducing the quantity of the switch control signal reception pin of the chip including this switch circuit, and then be favorable to reducing the cost of chip.
It should be understood that, when the channel types of the first switch transistor M11 and the second switch transistor M12 in the switch module 10 are different, the first switch transistor M11 may also be a P-type transistor, the second switch transistor M12 may also be an N-type transistor, and the technical principle thereof is similar to that when the first switch transistor M11 is an N-type transistor, and the second switch transistor M12 is a P-type transistor, and the same reference may be made to the above description when the first switch transistor M11 is an N-type transistor, and the second switch transistor M12 is a P-type transistor, which is not repeated herein.
It should be noted that, on the premise that the total leakage current of the leakage characteristic processing unit and the total leakage current of the switch module have a fixed relationship, the number of the leakage processing transistors of the leakage characteristic processing unit may be the same as or different from the number of the switch transistors of the switch module, and this is not specifically limited in the embodiment of the present invention.
Optionally, in an embodiment of the present invention, the current compensation unit in the leakage compensation module may include a mirror current source circuit, and an input terminal of the mirror current source circuit is electrically connected to a leakage current output terminal of the leakage characteristic processing unit; the output end of the mirror current source circuit is electrically connected with the output end of the switch, so that the mirror current source circuit of the current compensation unit can convert the equivalent leakage current generated by the leakage characteristic processing unit into corresponding compensation current and compensate the compensation current to the output end of the switch.
For example, as shown in fig. 4, the mirror current source circuit of the current compensation unit 22 may include two compensation transistors M221 and M222, a gate of the compensation transistor M221 being electrically connected to a gate of the compensation transistor M222; the gate of the compensation transistor M221 is further electrically connected to the first pole thereof, and the first pole of the compensation transistor M221 is electrically connected to the leakage current output end of the leakage characteristic processing unit 21 as the input end of the mirror current source circuit; a first pole of the compensation transistor M222 is electrically connected to the switch output Out10 as an output of the mirror current source circuit; the second pole of the compensation transistor M221 is electrically connected to the second pole of the compensation transistor M222; thus, the equivalent leakage current output by the leakage characteristic processing unit 21 is transmitted to the compensation transistor M221, then transmitted to the compensation transistor M222 by the compensation transistor M221, and output to the switch output terminal Out10 by the compensation transistor M222, so as to realize compensation of the signal at the switch output terminal Out 10.
Here, the channel width-to-length ratio of the compensation transistor M221 may be the same as or different from the channel width-to-length ratio of the compensation transistor M222. When the channel width-length ratio of the compensation transistor M221 is the same as the channel width-length ratio of the compensation transistor M222, the current flowing through the compensation transistor M221 is the same as the current flowing through the compensation transistor M222, and the equivalent leakage current output by the leakage characteristic processing unit 21 may be the same as the leakage current of the switch module 10, so that the equivalent leakage current can be directly transmitted to the switch output terminal Out10 through the compensation transistor M221 and the compensation transistor M222; when the channel width-to-length ratio of the compensation transistor M221 is different from the channel width-to-length ratio of the compensation transistor M222 and is in a certain proportion, the current flowing through the compensation transistor M221 is different from the current flowing through the compensation transistor M222 and is in a certain proportion; at this time, the equivalent leakage current output by the leakage characteristic processing unit 21 can be transmitted to the compensation transistor M222 through the compensation transistor M221 by mirroring, and then the compensation transistor M222 can scale the equivalent leakage current by a certain proportion and transmit the scaled equivalent leakage current to the switch output terminal Out 10.
It should be noted that fig. 4 only exemplarily shows a specific structure of the current compensation unit 22, and the structure of the current compensation unit 22 is not limited thereto in the embodiment of the present invention.
Optionally, fig. 5 is a schematic structural diagram of another switch circuit provided in the embodiment of the present invention. As shown in fig. 5, when the leakage characteristic processing unit 21 is configured to generate an equivalent current in a preset ratio to the leakage current of the switch module 10, the current compensation unit 22 includes a compensation current source 221, a plurality of mirror current source circuits (2221, 2222, …, 222n), and a gating switch 223; the compensation current source 221 is used for providing a fixed current signal; the input end of each mirror current source circuit (2221, 2222, …, 222n) is electrically connected with the compensation current source 221; the mirror current source circuits (2221, 2222, …, 222n) are used for outputting a plurality of different compensation currents after scaling the fixed current signals in a plurality of different proportions; the gating switch 223 comprises a plurality of gating input ends (In221, In222, …, In220) and a gating output end Out22, wherein each gating input end (In221, In222, …, In220) is electrically connected with the output end of each mirror current source circuit (2221, 2222, …, 222n) In a one-to-one correspondence mode, and the gating output end Out22 is electrically connected with the switch output end Out 10; the gating switch 223 is used for selectively conducting the gating input terminal (2221, 2222, …, 222n) and the gating output terminal Out22 according to the equivalent leakage current to output at least one compensation current to the switching output terminal Out 10.
Specifically, the compensation current source 221 provides a fixed current, and outputs a plurality of different compensation currents after scaling in different proportions by the mirror current source circuits (2221, 2222, …, 222 n); the plurality of different compensation currents are not all provided to the switch output Out10 to compensate the signal at the switch output Out10, but one or more compensation currents are selectively output through the gating switch 223.
Illustratively, when the amplification ratio of each of the mirror current source circuits (2221, 2222, …, 222n) from the mirror current source circuit 2221 to the mirror current source circuit 222n to a fixed current gradually increases; when the equivalent leakage current generated by the leakage characteristic processing unit 21 is small and the leakage current of the switch module 10 is large, the large leakage current needs to be compensated to the switch output terminal Out10 to ensure that the signal at the switch output terminal Out10 is not distorted; at this time, the gate switch 223 may selectively turn on the gate input terminal In22n and the gate output terminal Out22 according to the magnitude of the equivalent leakage current, so that the compensation current output after the equivalent leakage current is amplified by the mirror current source circuit 222n is transmitted to the switch output terminal Out10 through the turned-on gate input terminal In22n and the gate output terminal Out 22. Correspondingly, when the equivalent leakage current generated by the leakage characteristic processing unit 21 is large and the leakage current of the switch module 10 is small, the small leakage current needs to be compensated to the switch output terminal Out10, so as to ensure that the signal at the switch output terminal Out10 is not distorted; at this time, the gate switch 223 may selectively turn on the gate input terminal In221 and the gate output terminal Out22 according to the magnitude of the equivalent leakage current, so that the compensation current output after the equivalent leakage current is amplified by the mirror current source circuit 2221 is transmitted to the switch output terminal Out10 through the turned-on gate input terminal In221 and the gate output terminal Out 22.
In addition, the gate switch 223 can selectively turn on two or more gate input terminals and the gate output terminal Out22 according to the magnitude of the equivalent leakage current, so as to accurately compensate the signal of the switch output terminal Out 10. The specific implementation manner of the gating switch 223 is related to the function to be implemented by itself, and a person skilled in the art can set the implementation manner according to the actual situation, which is not limited herein.
For example, fig. 6 is a schematic structural diagram of another switching circuit provided in the embodiment of the present invention. As shown in fig. 6, the gate switch 223 may include a plurality of gate transistors (M231, M232, …, M23n), a first pole of each gate transistor (M231, M232, …, M23n) is electrically connected to an output terminal of each mirror current source circuit (2221, 2222, …, or 222n) in a one-to-one correspondence, a second pole of each gate transistor (M231, M232, …, M23n) is electrically connected to the switch output terminal Out10, and each gate transistor (M231, M232, …, M23n) receives different gate control signals (Vg21, Vg22, …, Vg2n), so that each gate transistor (M231, M232, …, M23n) is turned on or off under the control of the gate control signal Vg21, Vg22, …, Vg2n) received by each gate transistor.
Alternatively, as shown in fig. 5 and 6 in combination, each mirror current source circuit 2221(2222, …, or 222n) includes a first compensation transistor M210 and a second compensation transistor M201(M202, …, or M20 n); the first pole of the first compensation transistor M210 is an input terminal of the mirror current source circuit 2221(2222, …, or 222n), and the first pole of the second compensation transistor M201(M202, …, or M20n) is an output terminal of the mirror current source circuit 2221(2222, …, or 222 n); the mirror current source circuits (2221, 2222, …, 222n) share the first compensation transistor M210. In this way, by setting the second compensation transistors (M201, M202, …, M20n) of the respective mirror current source circuits (2221, 2222, …, 222n) to have different channel width-to-length ratios, different mirror current source circuits (2221, 2222, …, 222n) can have different scaling ratios for the fixed current signals; meanwhile, the number of transistors provided in the switching circuit can be reduced by making the first compensation transistor M210 common to the mirror current source circuits (2221, 2222, …, 222n), which is advantageous for simplifying the structure of the switching circuit and reducing the size of the switching circuit, thereby improving the integration of the chip when the switching circuit is integrated in the chip.
Based on the same inventive concept, embodiments of the present invention further provide a chip, where the chip includes the switch circuit provided in the embodiments of the present invention, so that the chip provided in the embodiments of the present invention includes technical features of the switch circuit provided in the embodiments of the present invention, and can achieve technical effects of the switch circuit provided in the embodiments of the present invention, and the same features can be referred to the above description of the switch circuit provided in the embodiments of the present invention, and are not described herein again.
Based on the same inventive concept, the embodiment of the invention also provides a signal processing device, which includes but is not limited to an oscilloscope. The signal processing device provided by the embodiment of the present invention includes the chip provided by the embodiment of the present invention, and therefore the signal processing device provided by the embodiment of the present invention also includes the technical features of the switch circuit provided by the embodiment of the present invention, and the technical effects of the switch circuit provided by the embodiment of the present invention can be achieved.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious modifications, rearrangements, combinations and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (11)
1. A switching circuit, comprising:
the switch module comprises a switch input end and a switch output end, and the switch module selectively conducts the switch input end and the switch output end so as to transmit a signal of the switch input end to the switch output end;
and the electric leakage compensation module is used for providing a compensation signal to the switch output end according to the electric leakage characteristic of the switch module.
2. The switching circuit of claim 1, wherein the leakage characteristic comprises leakage current; the leakage compensation module comprises a leakage characteristic processing unit and a current compensation unit;
the leakage characteristic processing unit is electrically connected with the current compensation unit; the leakage characteristic processing unit is used for generating equivalent leakage current which is the same as or in a preset proportion with the leakage current of the switch module;
the current compensation unit is used for outputting compensation current to the switch output end according to the equivalent leakage current.
3. The switching circuit according to claim 2, wherein the current compensation unit includes a mirror current source circuit;
the input end of the mirror current source circuit is electrically connected with the leakage current output end of the leakage characteristic processing unit; and the output end of the mirror current source circuit is electrically connected with the output end of the switch.
4. The switch circuit according to claim 2, wherein when the leakage characteristic processing unit is configured to generate an equivalent current in a preset ratio to the leakage current of the switch module, the current compensation unit includes a compensation current source, a plurality of mirror current source circuits, and a gate switch;
the compensation current source is used for providing a fixed current signal;
the input end of each mirror current source circuit is electrically connected with the compensation current source; the plurality of mirror current source circuits are used for outputting a plurality of different compensation currents after scaling the fixed current signals in a plurality of different proportions;
the gating switch comprises a plurality of gating input ends and gating output ends, the gating input ends are electrically connected with the output ends of the mirror current source circuits in a one-to-one correspondence mode, and the gating output ends are electrically connected with the switch output ends; the gating switch is used for selectively conducting the gating input end and the gating output end according to the equivalent leakage current so as to output at least one compensation current to the switch output end.
5. The switch circuit of claim 4, wherein each of the mirror current source circuits comprises a first compensation transistor and a second compensation transistor; the first pole of the first compensation transistor is the input end of the mirror current source circuit, and the first pole of the second compensation transistor is the output end of the mirror current source circuit;
wherein each of the mirror current source circuits shares the first compensation transistor.
6. The switching circuit of claim 2, wherein the switching module comprises at least one switching transistor; the grid electrode of each switch transistor receives the same or different switch control signals;
the leakage characteristic processing unit comprises at least one leakage processing transistor; the total leakage current of the at least one leakage handling transistor is the same as the total leakage current of the at least one switching transistor; or the total leakage current of the at least one leakage processing transistor and the total leakage current of the at least one switching transistor are in a preset proportion.
7. The switching circuit of claim 6, wherein the at least one switching transistor comprises a first switching transistor and a second switching transistor; a first pole of the first switching transistor and a first pole of the second switching transistor are both electrically connected with the switching input terminal; a second pole of the first switching transistor is grounded, and a second pole of the second switching transistor is electrically connected with the switching output end; the grid electrode of the first switch transistor receives a first switch control signal, and the grid electrode of the second switch transistor receives a second switch control signal;
the at least one leakage processing transistor comprises a first leakage processing transistor and a second leakage acquisition transistor; a first pole of the first leakage processing transistor is electrically connected with a first pole of the second leakage processing transistor, a second pole of the first leakage processing transistor is grounded, and a second pole of the second leakage processing transistor is electrically connected with the input end of the current compensation unit; the grid electrode of the first leakage processing transistor receives the first switch control signal, and the grid electrode of the second leakage processing transistor receives the second switch control signal;
the output end of the current compensation unit is electrically connected with the output end of the switch;
the first leakage processing transistor and the first switch transistor have the same structure, and the second leakage processing transistor and the second switch transistor have the same structure.
8. The switch circuit of claim 7, wherein the first switch transistor is of a different channel type than the second switch transistor.
9. The switch circuit of claim 8, wherein the first switch control signal is multiplexed into the second switch control signal.
10. A chip, comprising: a switching circuit as claimed in any one of claims 1 to 9.
11. A signal processing apparatus, characterized by comprising: the chip of claim 10.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110336457.XA CN113054963B (en) | 2021-03-29 | 2021-03-29 | Switching circuit, chip and signal processing device |
| PCT/CN2021/115582 WO2022205764A1 (en) | 2021-03-29 | 2021-08-31 | Switch circuit, chip, and signal processing device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110336457.XA CN113054963B (en) | 2021-03-29 | 2021-03-29 | Switching circuit, chip and signal processing device |
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| CN113054963A true CN113054963A (en) | 2021-06-29 |
| CN113054963B CN113054963B (en) | 2024-09-24 |
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| WO (1) | WO2022205764A1 (en) |
Cited By (1)
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|---|---|---|---|---|
| WO2022205764A1 (en) * | 2021-03-29 | 2022-10-06 | 普源精电科技股份有限公司 | Switch circuit, chip, and signal processing device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP4427336A1 (en) * | 2023-01-25 | 2024-09-11 | Analog Devices International Unlimited Company | A solid state switch device |
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| CN113054963B (en) * | 2021-03-29 | 2024-09-24 | 普源精电科技股份有限公司 | Switching circuit, chip and signal processing device |
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- 2021-03-29 CN CN202110336457.XA patent/CN113054963B/en active Active
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| CN106788405A (en) * | 2016-11-30 | 2017-05-31 | 上海华力微电子有限公司 | The charge pump circuit and phase-locked loop circuit of capacitor electric leakage compensation |
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| WO2022205764A1 (en) * | 2021-03-29 | 2022-10-06 | 普源精电科技股份有限公司 | Switch circuit, chip, and signal processing device |
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| WO2022205764A1 (en) | 2022-10-06 |
| CN113054963B (en) | 2024-09-24 |
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