CN106785901B - A kind of silicon substrate tunable laser and its implementation based on mode converter - Google Patents
A kind of silicon substrate tunable laser and its implementation based on mode converter Download PDFInfo
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- CN106785901B CN106785901B CN201611205957.5A CN201611205957A CN106785901B CN 106785901 B CN106785901 B CN 106785901B CN 201611205957 A CN201611205957 A CN 201611205957A CN 106785901 B CN106785901 B CN 106785901B
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- grating
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- silicon substrate
- mould
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
Abstract
The invention discloses a kind of silicon substrate tunable laser and its implementation based on mode converter, the silicon substrate tunable laser include semiconductor optical amplifier, SOI wafer and are arranged in SOI wafer successively coupler interconnected, TE0Mould waveguide, mode converter, the first sampled-grating and the second sampled-grating, the connection of the first, second sampled-grating interval；The light field that semiconductor optical amplifier exports is transmitted to TE by coupler0Mould waveguide, obtains TE0The light field of mould；Mode converter is by TE0The light field of mould is transformed to effective refractive index less than TE0The light field of the new model of mould；The light field of new model is reflected back semiconductor optical amplifier by the first, second sampled-grating.The present invention does not need to greatly reduce process costs, and technology stability is higher using more accurate manufacturing process, meanwhile, the first, second sampled-grating can save optical splitter in same waveguide, reduce complexity.
Description
Technical field
The present invention relates to optic communication integrated device fields, and in particular to a kind of silicon substrate based on mode converter is tunable to swash
Light device and its implementation.
Background technique
Tunable laser is the important devices in optical communication system, and traditional tunable laser is based primarily upon micromechanics
Tilting mirror and diffraction grating realize that volume is larger, are not suitable for integrated.Silicon-based photonics integration technology is the new technology occurred in recent years,
Have many advantages, such as high with semiconductor technology compatibility, at low cost and integrated level, be widely used in the integrated aspect of tunable laser,
Form silicon substrate tunable laser.
Currently, the micro-loop that silicon substrate tunable laser mainly uses technology stability poor is realized, and its silicon substrate reflected light
Although the stability of grid is higher than micro-loop, since the effective refractive index of silicon substrate optical waveguide is relatively high, and silicon substrate reflecting grating
Minimum dimension be less than 180nm, make it that can only lead to the higher cost of processing technology using expensive high-precision processing technology.
Summary of the invention
It is higher the technical problem to be solved by the present invention is to solve the process complexity of existing silicon substrate tunable laser
And the problem of higher cost.
In order to solve the above-mentioned technical problem, the technical scheme adopted by the invention is that providing a kind of based on mode converter
Silicon substrate tunable laser, including semiconductor optical amplifier, SOI wafer and setting successively mutually interconnect in the SOI wafer
Coupler, the TE connect0Mould waveguide, mode converter, the first sampled-grating and the second sampled-grating, first, second sampling
Grating spacings connection；
The light field that the semiconductor optical amplifier exports is transmitted to the TE by the coupler0Mould waveguide, obtains TE0Mould
Light field；The mode converter is by the TE0The light field of mould is transformed to effective refractive index less than TE0The light field of the new model of mould；
The light field of the new model is reflected back the semiconductor optical amplifier by first, second sampled-grating.
In the above-mentioned technical solutions, two faces of the semiconductor optical amplifier on optical propagation direction are respectively that part is anti-
Penetrate face and transmission plane, the transmission plane and the coupler alignment, first, second sampled-grating is by the light of the new model
Field is reflected back the part reflecting face, and light field a part of the new model is reflected back the silicon substrate by the part reflecting face can
The inside of tuned laser forms oscillation, and another part is emitted with laser form.
In the above-mentioned technical solutions, the TE0The phase converter for accurate adjustment is additionally provided in mould waveguide.
In the above-mentioned technical solutions, it is respectively provided on first, second sampled-grating and adjusts the of reflectance spectrum
One, the second tuner.
In the above-mentioned technical solutions, the spectral peak being overlapped in the reflectance spectrum of first, second sampled-grating is the silicon
The shoot laser wavelength of base tunable laser.
In the above-mentioned technical solutions, the mode of first, second sampled-grating be new model, the new model it is effective
Refractive index is less than λ/4d, and the period of first, second sampled-grating is greater than 2 × d；
Wherein, d is the smallest machining accuracy；λ is the operation wavelength of the silicon substrate tunable laser.
The implementation method for the silicon substrate tunable laser based on mode converter that the present invention also provides a kind of, feature exist
In, comprising the following steps:
The light field that semiconductor optical amplifier exports is transmitted to TE by coupler0Mould waveguide, obtains TE0The light field of mould；
By mode converter by TE0The light field of mould is transformed to effective refractive index less than TE0The light field of the new model of mould；
The light field of new model is reflected back semiconductor optical amplifier by the first, second sampled-grating.
In the above-mentioned technical solutions, the light field of new model semiconductor light is reflected back by the first, second sampled-grating to put
Big device, specifically includes the following steps:
The light field of the new model is reflected back the semiconductor optical amplifier by first, second sampled-grating
Light field a part of the new model is reflected back the silicon substrate tunable laser by the part reflecting face by part reflecting face
The inside of device forms oscillation, and another part is emitted with laser form.
The present invention passes through mode converter for TE0The light field of mould is transformed to effective refractive index less than TE0The light of the new model of mould
, make to be arranged in the mode new model of the first sampled-grating and the second sampled-grating on mode converter, and effectively refraction
Rate ratio TE0Mould is lower, meets the requirement of minimum process precision, does not need to greatly reduce work using more accurate manufacturing process
Skill cost；And first, second sampled-grating it is higher compared to micro-loop technology stability；Meanwhile first, second sampled-grating exist
It in same waveguide, can save optical splitter (optical splitter), reduce complexity.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of the silicon substrate tunable laser based on mode converter provided by the invention；
Fig. 2 is a kind of top view of the silicon substrate tunable laser based on mode converter provided by the invention；
Fig. 3 is the top view of semiconductor optical amplifier provided by the invention and coupler；
Fig. 4 is a kind of implementation method process of the silicon substrate tunable laser based on mode converter provided by the invention
Figure.
Specific embodiment
The present invention is described in detail with specific embodiment with reference to the accompanying drawings of the specification.
Description of symbols:
1- semiconductor optical amplifier, 2- coupler, 3-TE0Mould waveguide, 4- phase converter, 5- mode converter, 6- first take
Sample grating, the first tuner of 7-, the second sampled-grating of 8-, the second tuner of 9-, 10-SOI wafer, 11- part reflecting face, 12-
Transmission plane, 13- laser emitting.
The silicon substrate tunable laser based on mode converter that the embodiment of the invention provides a kind of, as shown in Figure 1-3, packet
It includes:
Semiconductor optical amplifier 1, SOI wafer 10 and be produced in SOI wafer 10 successively coupler 2 interconnected,
TE0Mould waveguide 3, mode converter 5, the first sampled-grating 6 and the second sampled-grating 8, the first sampled-grating 6 and the second sampling light
The connection of the interval of grid 8, two faces of the semiconductor optical amplifier 1 on optical propagation direction are respectively part reflecting face 11 and transmission plane
12, transmission plane 12 is aligned with coupler 2.
The light field that semiconductor optical amplifier 1 exports is transmitted to TE through coupler 20Mould waveguide 3, the mode conversion of light field are TE0
Mould, mode converter 5 is by TE0The light field of mould is transformed to effective refractive index ratio TE0The light field of the lower new model of mould, the first sampling
The light field of new model is reflected back the part reflecting face 11 of semiconductor optical amplifier 1 by grating 6 and the second sampled-grating 8, and part is anti-
It penetrates face 11 and the inside that light field a part of new model is reflected back silicon substrate tunable laser is formed into oscillation, another part is with laser
Form outgoing 13.
TE0The phase converter 4 for accurate adjustment is additionally provided in mould waveguide 3.
7 He of the first tuner for adjusting reflectance spectrum is respectively provided on first sampled-grating 6 and the second sampled-grating 8
The reflectance spectrum of second tuner 9, the first sampled-grating 6 and the second sampled-grating 8 is comb spectrum, is imitated according to vernier caliper
It answers, tunes the reflected light of the first sampled-grating 6 and the second sampled-grating 8 respectively using the first tuner 7 and the second tuner 9
Spectrum.Wherein, the spectral peak being overlapped in the reflectance spectrum of the first sampled-grating 6 and the second sampled-grating 8 is silicon substrate tunable laser
Shoot laser wavelength.
The mode of first sampled-grating 6 and the second sampled-grating 8 is new model, the effective refractive index of new model be less than λ/
The period of 4d, the first, second sampled-grating are greater than 2 × d, wherein d is the smallest machining accuracy；λ is silicon substrate tunable laser
Operation wavelength.
The implementation method for the silicon substrate tunable laser based on mode converter that the embodiment of the invention also provides a kind of, such as
Shown in Fig. 4, comprising the following steps:
S1, the light field that semiconductor optical amplifier exports is transmitted to by TE by coupler0Mould waveguide, obtains TE0The light of mould
?.
S2, pass through mode converter for TE0The light field of mould is transformed to effective refractive index less than TE0The light field of the new model of mould.
S3, the part that the light field of new model is reflected back semiconductor optical amplifier is reflected by the first, second sampled-grating
Face.
S4, it passes through partially reflective face and forms the inside that light field a part of new model is reflected back silicon substrate tunable laser
Oscillation, another part are emitted with laser form.
The present invention is not limited to above-mentioned preferred forms, anyone structure change made under the inspiration of the present invention,
The technical schemes that are same or similar to the present invention are fallen within the scope of protection of the present invention.
Claims (8)
1. a kind of silicon substrate tunable laser based on mode converter, which is characterized in that including semiconductor optical amplifier, SOI
Wafer and successively coupler interconnected, TE are set in the SOI wafer0Mould waveguide, mode converter, the first sampling
Grating and the second sampled-grating, the connection of first, second sampled-grating interval；
The light field that the semiconductor optical amplifier exports is transmitted to the TE by the coupler0Mould waveguide, obtains TE0The light of mould
?；The mode converter is by the TE0The light field of mould is transformed to effective refractive index less than TE0The light field of the new model of mould；It is described
The light field of the new model is reflected back the semiconductor optical amplifier by the first, second sampled-grating.
2. the silicon substrate tunable laser based on mode converter as described in claim 1, which is characterized in that the semiconductor
Two faces of the image intensifer on optical propagation direction are respectively part reflecting face and transmission plane, the transmission plane and the coupler
The light field of the new model is reflected back the part reflecting face, the part reflection by alignment, first, second sampled-grating
Face by light field a part of the new model be reflected back the silicon substrate tunable laser inside formed oscillation, another part with
Laser form outgoing.
3. the silicon substrate tunable laser based on mode converter as described in claim 1, which is characterized in that the TE0Mould wave
Lead the phase converter being additionally provided with for accurate adjustment.
4. the silicon substrate tunable laser based on mode converter as described in claim 1, which is characterized in that described first takes
Sample grating is equipped with the first tuner for adjusting reflectance spectrum, and second sampled-grating is equipped with for adjusting reflected light
Second tuner of spectrum.
5. the silicon substrate tunable laser based on mode converter as claimed in claim 4, which is characterized in that described first,
The spectral peak being overlapped in the reflectance spectrum of second sampled-grating is the shoot laser wavelength of the silicon substrate tunable laser.
6. the silicon substrate tunable laser based on mode converter as described in claim 1, which is characterized in that described first,
The mode of second sampled-grating is new model, and the effective refractive index of the new model is less than λ/4d, the first, second sampling light
The period of grid is greater than 2 × d；
Wherein, d is the smallest machining accuracy；λ is the operation wavelength of the silicon substrate tunable laser.
7. a kind of realization side of the silicon substrate tunable laser as claimed in any one of claims 1 to 6 based on mode converter
Method, which comprises the following steps:
The light field that semiconductor optical amplifier exports is transmitted to TE by coupler0Mould waveguide, obtains TE0The light field of mould；
By mode converter by TE0The light field of mould is transformed to effective refractive index less than TE0The light field of the new model of mould；
The light field of new model is reflected back semiconductor optical amplifier by the first, second sampled-grating.
8. the implementation method of the silicon substrate tunable laser based on mode converter as claimed in claim 7, which is characterized in that
The light field of new model is reflected back semiconductor optical amplifier by the first, second sampled-grating, specifically includes the following steps:
The light field of the new model is reflected back to the part of the semiconductor optical amplifier by first, second sampled-grating
Light field a part of the new model is reflected back the silicon substrate tunable laser by the part reflecting face by reflecting surface
Inside forms oscillation, and another part is emitted with laser form.
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| CN201611205957.5A CN106785901B (en) | 2016-12-23 | 2016-12-23 | A kind of silicon substrate tunable laser and its implementation based on mode converter |
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| CN106785901B true CN106785901B (en) | 2019-03-08 |
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| CN110544874B (en) * | 2019-10-14 | 2021-01-12 | 南京邮电大学 | Silicon-based tunable laser based on staggered grating and implementation method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105305229A (en) * | 2015-12-04 | 2016-02-03 | 武汉邮电科学研究院 | High coupling efficiency electric injection integration silicon-based laser |
| CN105356292A (en) * | 2015-11-30 | 2016-02-24 | 武汉电信器件有限公司 | Tunable wavelength semiconductor laser |
| US9477013B2 (en) * | 2014-02-17 | 2016-10-25 | Electronics And Telecommunications Research Institute | Reflective optical source device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040114869A1 (en) * | 2001-06-15 | 2004-06-17 | Fike Eugene E. | Mode converter including tapered waveguide for optically coupling photonic devices |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9477013B2 (en) * | 2014-02-17 | 2016-10-25 | Electronics And Telecommunications Research Institute | Reflective optical source device |
| CN105356292A (en) * | 2015-11-30 | 2016-02-24 | 武汉电信器件有限公司 | Tunable wavelength semiconductor laser |
| CN105305229A (en) * | 2015-12-04 | 2016-02-03 | 武汉邮电科学研究院 | High coupling efficiency electric injection integration silicon-based laser |
Non-Patent Citations (2)
| Title |
|---|
| Compact and low power consumption hybrid integrated wavelength tunable laser module using silicon waveguide resonators;Nobuhide Fujioka et al;《JOURNAL OF LIGHTWAVE TECHNOLOGY》;20101101;第28卷(第21期);第3115-3120页 |
| Power-efficient III-V/silicon external cavity DBR lasers;A.J.Zilkie et al;《OPTICS EXPRESS》;20121008;第20卷(第21期);第23456-23462页 |
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