CN106784261A - A kind of preparation method of laminated devices quantum dot LED backlight - Google Patents
A kind of preparation method of laminated devices quantum dot LED backlight Download PDFInfo
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- CN106784261A CN106784261A CN201611083070.3A CN201611083070A CN106784261A CN 106784261 A CN106784261 A CN 106784261A CN 201611083070 A CN201611083070 A CN 201611083070A CN 106784261 A CN106784261 A CN 106784261A
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- quantum dot
- led
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 56
- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- 239000003292 glue Substances 0.000 claims abstract description 166
- 239000000463 material Substances 0.000 claims abstract description 79
- 239000000843 powder Substances 0.000 claims abstract description 40
- 238000000016 photochemical curing Methods 0.000 claims abstract description 38
- 239000000853 adhesive Substances 0.000 claims description 20
- 230000001070 adhesive effect Effects 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 17
- 239000011324 bead Substances 0.000 claims description 16
- 230000003287 optical effect Effects 0.000 claims description 11
- 238000007711 solidification Methods 0.000 claims description 10
- 230000008023 solidification Effects 0.000 claims description 10
- 238000009156 water cure Methods 0.000 claims description 7
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 4
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910017680 MgTe Inorganic materials 0.000 claims description 3
- 229910019142 PO4 Inorganic materials 0.000 claims description 3
- 229910002665 PbTe Inorganic materials 0.000 claims description 3
- 150000004645 aluminates Chemical class 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 3
- 239000010452 phosphate Substances 0.000 claims description 3
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 3
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 2
- 229910003373 AgInS2 Inorganic materials 0.000 claims description 2
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims description 2
- 229910004613 CdTe Inorganic materials 0.000 claims description 2
- 229910005543 GaSe Inorganic materials 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 2
- 229910020698 PbZrO3 Inorganic materials 0.000 claims description 2
- 229910007709 ZnTe Inorganic materials 0.000 claims description 2
- 229910002113 barium titanate Inorganic materials 0.000 claims description 2
- 238000003682 fluorination reaction Methods 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 2
- 150000002910 rare earth metals Chemical class 0.000 claims description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 2
- 239000011780 sodium chloride Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 15
- 238000000034 method Methods 0.000 abstract description 15
- 239000011241 protective layer Substances 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000006378 damage Effects 0.000 abstract description 2
- 238000004020 luminiscence type Methods 0.000 description 20
- 239000012790 adhesive layer Substances 0.000 description 13
- 239000004593 Epoxy Substances 0.000 description 10
- 125000003700 epoxy group Chemical group 0.000 description 10
- 229920000647 polyepoxide Polymers 0.000 description 10
- 238000003756 stirring Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000004568 cement Substances 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 238000009738 saturating Methods 0.000 description 4
- 241001062009 Indigofera Species 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of preparation method of laminated devices quantum dot LED backlight; fluorescent glue A is made first; and fluorescent glue A is coated on the surface of LED lens; then fluorescent glue B is prepared; and fluorescent glue B is coated on fluorescent glue A surfaces, and finally one layer of photocuring glue is coated as protective layer in fluorescent glue B surface, obtain the LED lens of laminated devices; finally LED lens are fixed in LED light bar, the light that LED light bar sends obtains white light with the photoreactivation that fluorescent glue A, fluorescent glue B send.Compared with traditional backlight source, the half-wave of quanta point material is wide narrower, the significant increase color gamut value of LED backlight, and LED backlight color gamut value obtained in preparation method of the present invention is up to NTSC more than 95%, and methods described process is simple, low production cost.And layered structure fluorescent glue solves the problems, such as that various fluorescent materials directly are mixed into the structure of the sub- dot fluorescent powder of destruction amount that reacts to each other in the prior art, causes light decay.
Description
Technical field
The invention belongs to LED backlight technical field, it is related to a kind of preparation method of quantum dot LED backlight, specifically
Say the preparation method for being related to a kind of laminated devices quantum dot LED backlight.
Background technology
At present, most of display devices are all to realize that image shows by back light source structure irradiating liquid crystal screen, backlight
The characteristics of luminescence directly affect the display picture quality of display device.In recent years with global energy crisis and people's energy-conserving and environment-protective
The progressively enhancing of consciousness, a large amount of energy-conserving and environment-protective materials have come into our life.Wherein light emitting diode (LED) is due to energy
The advantages of consuming few low, heat production, long lifespan is gradually replacing traditional CCFL illuminating materials, the backlight material as a new generation
Material.The LED backlight of colour gamut particularly high makes using electronic product screens such as its TV, mobile phone, panel computers with more
Chromatic colour, color rendition Du Genggao.
In LED materials, light-emitting phosphor material has been widely used in LED illumination and display, most common LED-backlit
Source is excited in the form of YAG yellow fluorescent powders using blue chip, and because lacking red color light component in backlight, color gamut value can only achieve
NTSC 65%~72%.In order to further improve color gamut value, technical staff generally employs blue chip while exciting feux rouges glimmering
The mode of light powder, green light fluorescent powder, but because the half-wave of existing use fluorescent material is wide, even if therefore adopt in this way, also can only
The color gamut value of backlight is promoted to NTSC 80% or so.Meanwhile, the launching efficiency of existing fluorescent material is low, to realize colour gamut high
White light needs a large amount of fluorescent material, causes the concentration (fluorescent material accounts for the ratio of encapsulation glue) of fluorescent material in LED encapsulation process very high,
So as to substantially increase the difficulty of packaging operation and the fraction defective of product, while fluorescent material is also present, light decay is big, particle is equal
The problem that evenness is poor, service life is short.
To solve the above mentioned problem of fluorescent material, in recent years, quanta point material is gradually taken seriously, particularly quantum dot fluorescence
Powder has spectrum with size adjustable, emission peak half-wave width, a series of unique light such as Stokes shift is big, launching efficiency is high
Performance is learned, by the extensive concern of LED-backlit industry.At present, quantum dot fluorescence powder realizes that the mode of colour gamut white light high mainly has：
(1) quantum dot fluorescence powder is made optical film material, is filled in light guide plate or is affixed in LCD screen, by blue light or ultraviolet light
Backlight lamp bead is excited, and obtains white light；(2) quantum dot fluorescence powder is made glass tube, is placed in screen side, by blue light or ultraviolet
Light backlight lamp bead is excited, and obtains white light.But, the complex process of both implementations, phototranstormation efficiency are low, relatively costly,
Extensive industrialization is difficult to realize, and the quantum dot LED backlight color gamut value that prior art is obtained is relatively low.
The content of the invention
Therefore, the technical problems to be solved by the invention are existing quantum dot LED backlight complex manufacturing, cost
High, phototranstormation efficiency and color gamut value are low, thus propose it is a kind of be readily produced, the layering that with low cost, yield is high, illumination effect is good
The preparation method of quantum dot LED backlight.
In order to solve the above technical problems, the technical scheme is that：
The present invention provides a kind of preparation method of laminated devices quantum dot LED backlight, and it comprises the following steps：
A, to adding photocuring glue in luminescent material A and being well mixed the two, obtain fluorescent glue A, the photocuring
Glue is 1-300 with the mass ratio of the luminescent material A:1；
B, the fluorescent glue A is coated on inner surface or the outer surface of LED lens in LED backlight, and makes the fluorescence
Adhesive curing；
C, to adding photocuring glue in luminescent material B and being well mixed the two, obtain fluorescent glue B, the photocuring
Glue is 1-300 with the mass ratio of the luminescent material B:1；
D, the fluorescent glue B is coated on the fluorescent glue A surfaces, and solidifies the fluorescent glue B；
E, one layer of photocuring glue is coated in the fluorescent glue B surface, and make the optic-solidified adhesive water cure, be layered
The LED lens of structure；
Wherein, the luminescent material A and/or luminescent material B includes quantum dot fluorescence powder.
Preferably, the quantum dot fluorescence powder is BaS, AgInS2、NaCl、Fe2O3、In2O3、InAs、InN、InP、
CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、GaAs、GaN、GaS、GaSe、InGaAs、MgS、MgSe、MgTe、PbS、PbSe、
PbTe、Cd(SxSe1-x)、BaTiO3、PbZrO3、CsPbCl3、CsPbBr3、CsPbI3In at least one,
Preferably, the luminescent material A and/or luminescent material B also include rare earth doped inorganic fluorescent powder.
Preferably, the inorganic fluorescent powder be silicate, aluminate, phosphate, nitride, fluorination matter fluorescent powder in
It is at least one.
Preferably, the transmitting peak wavelength of the luminescent material A and the luminescent material B is 450-660nm.
Preferably, the fluorescent glue A thickness for being coated on the LED lens surfaces is 3-300 μm, the fluorescent glue A warps
The ultraviolet light 3-100s solidifications of 230-400nm.
Preferably, the coating thickness of the fluorescent glue B is 3-300 μm, the fluorescent glue B is through the ultraviolet of 230-400nm
Light irradiation 3-100s solidifies.
Preferably, in the step c, the coating thickness of the photocuring glue is 10-1000 μm, the optic-solidified adhesive
Water solidifies through the ultraviolet light 5-200s of 230-400nm.
Preferably, also including step f after the step e：The LED lens are fixed in LED monochrome lamp bars, it is described
Lamp bead in LED monochrome lamp bars only has luminescence chip to light.
Preferably, ultraviolet chip or peak luminous wavelength of the luminescence chip for peak luminous wavelength 230-400nm
The blue chip of 420-480nm.
Above-mentioned technical proposal of the invention has advantages below compared to existing technology：
(1) preparation method of laminated devices quantum dot LED backlight of the present invention, makes fluorescent glue A first, and will be glimmering
Optical cement A is coated on the surface of LED lens, then prepares fluorescent glue B, and fluorescent glue B is coated on into fluorescent glue A surfaces, finally exists
Fluorescent glue B surface coats one layer of photocuring glue as protective layer, obtains the LED lens of laminated devices, finally fixes LED lens
In the light that in LED light bar, LED light bar sends white light is obtained with the photoreactivation that fluorescent glue A, fluorescent glue B send.With traditional backlight source
Compare, the half-wave of quanta point material is wide narrower, the significant increase color gamut value of LED backlight, preparation method of the present invention
Obtained LED backlight color gamut value is up to NTSC more than 95%, and methods described process is simple, low production cost.And institute
State layer structure fluorescent glue and solve and various fluorescent materials are directly mixed into (especially various quantum dot phosphors in the prior art
Material mixing) the destruction quantum dot fluorescent powder that reacts to each other structure, cause the problem of light decay.
(2) preparation method of laminated devices quantum dot LED backlight of the present invention, also includes step after the step e
f：The LED lens are fixed in LED monochrome lamp bars, the lamp bead in the LED monochromes lamp bar only has luminescence chip to light.Will
Fluorescent glue is coated on LED lens, and coats optic-solidified adhesive protective layer on fluorescent glue surface, can make quantum dot fluorescence powder away from luminous
Chip, it is therefore prevented that quantum dot fluorescence powder is influenceed to cause light decay by the high temperature of luminescence chip, significantly improves the reliability of backlight,
Meanwhile, quantum dot fluorescence powder can keep launching efficiency higher, and fluorescent adhesive layer coating thickness is controllable, only luminous in lamp bead
Chip light emitting, need not add fluorescent material in encapsulation process, the difficulty of packaging operation and the fraction defective of product be reduced, so as to reduce
The production cost of backlight, is adapted to mass industrialized production.
Brief description of the drawings
In order that present disclosure is more likely to be clearly understood, below according to specific embodiment of the invention and combine
Accompanying drawing, the present invention is further detailed explanation, wherein
Fig. 1 is the structural representation of the LED backlight described in the embodiment of the present invention 1；
Fig. 2 is the structural representation of the LED backlight described in the embodiment of the present invention 2；
Reference is expressed as in figure：1- supports；The 2- coats of metal；3- luminescence chips；4- bonding lines；5- encapsulates glue
Layer；6-LED lens；7- fluorescent adhesive layers A；8- fluorescent adhesive layers B；9- optic-solidified adhesive protective layers.
Specific embodiment
Embodiment 1
The present invention provides a kind of preparation method of laminated devices quantum dot LED backlight, and methods described comprises the following steps：
A, 0.04g luminescent materials A is weighed, the luminescent material A is InAs, InN green quantum of wavelength of transmitted light 542nm
Dot fluorescent powder, wherein the quality of the InAs quantum dot fluorescences powder is 0.02g, weighs 0.04g polyurethanes photocuring glue and adds
Enter in the luminescent material A, carry out vacuum defoamation stirring, obtain quantum dot fluorescence glue A, the quantum dot fluorescence powder is powder
Shape, it is alternatively solvent dispersed；
B, the outer surface that the fluorescent glue A is coated on LED lens in LED backlight, the fluorescent glue A thickness of coating is 3 μ
M, the LED lens for being coated with fluorescent glue A are placed in uv oven, and 3s is irradiated under the ultraviolet light of 230nm, make the fluorescence
Glue A solidifies；
C, 0.57g luminescent materials B is weighed, the luminescent material B is the phosphate feux rouges fluorescence of wavelength of transmitted light 655nm
Powder, weighs 0.57g epoxies photocuring glue, and is added into the luminescent material B, carries out vacuum defoamation stirring, obtains glimmering
Optical cement B；
D, by the fluorescent glue B be coated on solidification after the fluorescent glue A surfaces, fluorescent glue B is coated fluorescent glue completely
The coating thickness of A, the fluorescent glue B is 3 μm, and the LED lens that will be coated with fluorescent glue B are placed in uv oven, in 230nm
Ultraviolet light under irradiate 3s and solidify the fluorescent glue B；
E, the epoxies photocuring glue that a layer thickness is 10 μm is coated in the fluorescent glue B surface, make photocuring glue
The fluorescent glue B is completely covered, the LED lens that will be coated with epoxies photocuring glue are placed in uv oven, in 230nm
Ultraviolet light under irradiate 5s, make optic-solidified adhesive water cure, obtain the laminated devices LED lens with optic-solidified adhesive protective layer；
F, the laminated devices LED lens are fixed in LED monochrome lamp bars, the lamp bead in LED monochrome lamp bar only has
Luminescence chip lights, unencapsulated fluorescent material in lamp bead, and in the present embodiment, the luminescence chip is the indigo plant of wavelength of transmitted light 445nm
Optical chip, the feux rouges that green glow that the blue chip and fluorescent glue A send, fluorescent glue B send is combined, and obtains white light emission, i.e.,
Laminated devices quantum dot LED backlight is obtained.
The structure of laminarity LED backlight described in the present embodiment is described as shown in figure 1, it includes LED monochrome lamp bars
LED light bar includes support 1, is arranged at the coat of metal 2 of the upper surface of the support 1, is fixed on the hair of the metal coating surface
Optical chip 3, the luminescence chip is also connected with the coat of metal 2 by bonding line 4, and the outer enclosure of the luminescence chip 3 has
Encapsulation glue layer 5, is provided with the LED lens 6 outside the LED light bar, the outer surface of LED lens 6 is coated with fluorescent glue
Layer A7, the fluorescent adhesive layer A7 surfaces are coated with fluorescent adhesive layer B8 again, and the fluorescent adhesive layer B surface is coated with optic-solidified adhesive protection
Layer 9, wherein at least one in the fluorescent adhesive layer A and fluorescent adhesive layer B contains quanta point material.
Embodiment 2
The present invention provides a kind of preparation method of laminated devices quantum dot LED backlight, and methods described comprises the following steps：
A, 0.13g luminescent materials A is weighed, the luminescent material A is glimmering for the CdSe red light quantum points of wavelength of transmitted light 645nm
Light powder, weighs in the 39g epoxies photocurings glue addition luminescent material A, carries out vacuum defoamation stirring, obtains quantum dot glimmering
Optical cement A, the quantum dot fluorescence powder is powdered, and it is alternatively solvent dispersed；
B, the inner surface that the fluorescent glue A is coated on LED lens in LED backlight, the fluorescent glue A thickness of coating is
300 μm, the LED lens for being coated with fluorescent glue A are placed in uv oven, and 100s is irradiated under the ultraviolet light of 400nm, make institute
State fluorescent glue A solidifications；
C, 0.03g luminescent materials B is weighed, the luminescent material B is the BaTiO of wavelength of transmitted light 540nm3、CsPbCl3、
CsPbBr3Green light quantum point silver light powder, weighs 1.57g organic silicon photocuring glue, and is added into the luminescent material B,
Vacuum defoamation stirring is carried out, fluorescent glue B is obtained；
D, by the fluorescent glue B be coated on solidification after the fluorescent glue A surfaces, fluorescent glue B is coated fluorescent glue completely
The coating thickness of A, the fluorescent glue B is 300 μm, and the LED lens that will be coated with fluorescent glue B are placed in uv oven,
100s is irradiated under the ultraviolet light of 400nm solidifies the fluorescent glue B；
E, the organic silicon photocuring glue that a layer thickness is 1000 μm is coated in the fluorescent glue B surface, make photocuring
Glue is completely covered the fluorescent glue B, and the LED lens that will be coated with epoxies photocuring glue are placed in uv oven,
200s is irradiated under the ultraviolet light of 400nm, makes optic-solidified adhesive water cure, obtain the laminated devices LED with optic-solidified adhesive protective layer saturating
Mirror；
F, the laminated devices LED lens are fixed in LED monochrome lamp bars, the lamp bead in LED monochrome lamp bar only has
Luminescence chip lights, unencapsulated fluorescent material in lamp bead, and in the present embodiment, the luminescence chip is the indigo plant of wavelength of transmitted light 480nm
Optical chip, the green glow that feux rouges that the blue chip and fluorescent glue A send, fluorescent glue B send is combined, and obtains white light emission, i.e.,
Laminated devices quantum dot LED backlight is obtained.
The structure of laminarity LED backlight described in the present embodiment is described as shown in Fig. 2 it includes LED monochrome lamp bars
LED light bar includes support 1, is arranged at the coat of metal 2 of the upper surface of the support 1, is fixed on the hair of the metal coating surface
Optical chip 3, the luminescence chip is also connected with the coat of metal 2 by bonding line 4, and the outer enclosure of the luminescence chip 3 has
Encapsulation glue layer 5, is provided with the LED lens 6 outside the LED light bar, the inner surface of LED lens 6 is coated with fluorescent glue
Layer A7, the fluorescent adhesive layer A7 surfaces are coated with fluorescent adhesive layer B8 again, and the fluorescent adhesive layer B8 surfaces are coated with optic-solidified adhesive guarantor
Sheath 9, wherein at least one in the fluorescent adhesive layer A and fluorescent adhesive layer B contains quanta point material.
Embodiment 3
The present invention provides a kind of preparation method of laminated devices quantum dot LED backlight, and methods described comprises the following steps：
A, 0.13g luminescent materials A is weighed, the luminescent material A is glimmering for the CdSe red light quantum points of wavelength of transmitted light 645nm
Light powder, weighs in the 39g epoxies photocurings glue addition luminescent material A, carries out vacuum defoamation stirring, obtains quantum dot glimmering
Optical cement A, the quantum dot fluorescence powder is powdered, and it is alternatively solvent dispersed；
B, the inner surface that the fluorescent glue A is coated on LED lens in LED backlight, the fluorescent glue A thickness of coating is
300 μm, the LED lens for being coated with fluorescent glue A are placed in uv oven, and 100s is irradiated under the ultraviolet light of 400nm, make institute
State fluorescent glue A solidifications；
C, 0.03g luminescent materials B is weighed, the luminescent material B is the BaTiO of wavelength of transmitted light 540nm3、CsPbCl3、
CsPbBr3Green light quantum point silver light powder, weighs 1.57g organic silicon photocuring glue, and is added into the luminescent material B,
Vacuum defoamation stirring is carried out, fluorescent glue B is obtained；
D, by the fluorescent glue B be coated on solidification after the fluorescent glue A surfaces, fluorescent glue B is coated fluorescent glue completely
The coating thickness of A, the fluorescent glue B is 300 μm, and the LED lens that will be coated with fluorescent glue B are placed in uv oven,
100s is irradiated under the ultraviolet light of 400nm solidifies the fluorescent glue B；
E, the organic silicon photocuring glue that a layer thickness is 1000 μm is coated in the fluorescent glue B surface, make photocuring
Glue is completely covered the fluorescent glue B, and the LED lens that will be coated with epoxies photocuring glue are placed in uv oven,
200s is irradiated under the ultraviolet light of 400nm, makes optic-solidified adhesive water cure, obtain the laminated devices LED with optic-solidified adhesive protective layer saturating
Mirror；
F, the laminated devices LED lens are fixed in LED monochrome lamp bars, the lamp bead in LED monochrome lamp bar only has
Luminescence chip lights, unencapsulated fluorescent material in lamp bead, and in the present embodiment, the luminescence chip is the indigo plant of wavelength of transmitted light 480nm
Optical chip, the green glow that feux rouges that the blue chip and fluorescent glue A send, fluorescent glue B send is combined, and obtains white light emission, i.e.,
Laminated devices quantum dot LED backlight is obtained.
Embodiment 4
The present invention provides a kind of preparation method of laminated devices quantum dot LED backlight, and methods described comprises the following steps：
A, weigh the fluoride red light fluorescent powder of luminescent material A, the luminescent material A by 0.55g wavelength of transmitted light 635nm
Aluminate blue light fluorescent powder with 0.32g wavelength of transmitted light 467nm is constituted, and weighs the addition of 4.93g polyurethanes photocurings glue
In the luminescent material A, vacuum defoamation stirring is carried out, obtain quantum dot fluorescence glue A；
B, the inner surface that the fluorescent glue A is coated on LED lens in LED backlight, the fluorescent glue A thickness of coating is
100 μm, the LED lens for being coated with fluorescent glue A are placed in uv oven, and 50s is irradiated under the ultraviolet light of 275nm, make institute
State fluorescent glue A solidifications；
C, 0.06g luminescent materials B is weighed, the luminescent material B is GaN, PbTe green quantum of wavelength of transmitted light 533nm
Dot fluorescent powder, weighs 2.25g organic silicon photocuring glue, and is added into the luminescent material B, carries out vacuum defoamation and stirs
Mix, obtain fluorescent glue B, the quantum dot fluorescence powder is powdered, and it is alternatively solvent dispersed；
D, by the fluorescent glue B be coated on solidification after the fluorescent glue A surfaces, fluorescent glue B is coated fluorescent glue completely
The coating thickness of A, the fluorescent glue B is 25 μm, and the LED lens that will be coated with fluorescent glue B are placed in uv oven,
25s is irradiated under the ultraviolet light of 330nm solidifies the fluorescent glue B；
E, the organic silicon photocuring glue that a layer thickness is 500 μm is coated in the fluorescent glue B surface, make optic-solidified adhesive
Water is completely covered the fluorescent glue B, and the LED lens that will be coated with epoxies photocuring glue are placed in uv oven,
40s is irradiated under the ultraviolet light of 230nm, makes optic-solidified adhesive water cure, obtain the laminated devices LED with optic-solidified adhesive protective layer saturating
Mirror；
F, the laminated devices LED lens are fixed in LED monochrome lamp bars, the lamp bead in LED monochrome lamp bar only has
Luminescence chip lights, unencapsulated fluorescent material in lamp bead, and in the present embodiment, the luminescence chip is the purple of wavelength of transmitted light 335nm
Outer chip, the green glow that feux rouges that the ultraviolet chip and fluorescent glue A send, blue light, fluorescent glue B send is combined, and obtains white light hair
Penetrate, that is, laminated devices quantum dot LED backlight is obtained.
Embodiment 5
The present invention provides a kind of preparation method of laminated devices quantum dot LED backlight, and methods described comprises the following steps：
A, weigh the CsPbBr of luminescent material A, the luminescent material A by 0.25g wavelength of transmitted light 645nm3Red quantum
The blue light Nitride phosphor composition of dot fluorescent powder and wavelength of transmitted light 460nm, weighs the addition of 9.5g epoxies photocurings glue
In the luminescent material A, carry out vacuum defoamation stirring, obtain quantum dot fluorescence glue A, the quantum dot fluorescence powder be it is powdered,
It is alternatively solvent dispersed；
B, the inner surface that the fluorescent glue A is coated on LED lens in LED backlight, the fluorescent glue A thickness of coating is 75
μm, the LED lens for being coated with fluorescent glue A are placed in uv oven, and 55s is irradiated under the ultraviolet light of 355nm, are made described glimmering
Optical cement A solidifies；
C, weigh luminescent material B, the luminescent material B by 0.35g wavelength of transmitted light 545nm MgTe green light quantum points silver
The fluoride green light fluorescent powder composition of light powder and 0.09g wavelength of transmitted light 540nm, weighs 3.55g organic silicon photocuring glue,
And the luminescent material B is added into, and vacuum defoamation stirring is carried out, obtain fluorescent glue B；
D, by the fluorescent glue B be coated on solidification after the fluorescent glue A surfaces, fluorescent glue B is coated fluorescent glue completely
The coating thickness of A, the fluorescent glue B is 155 μm, and the LED lens that will be coated with fluorescent glue B are placed in uv oven,
35s is irradiated under the ultraviolet light of 375nm solidifies the fluorescent glue B；
E, the organic silicon photocuring glue that a layer thickness is 165 μm is coated in the fluorescent glue B surface, make optic-solidified adhesive
Water is completely covered the fluorescent glue B, and the LED lens that will be coated with epoxies photocuring glue are placed in uv oven,
15s is irradiated under the ultraviolet light of 385nm, makes optic-solidified adhesive water cure, obtain the laminated devices LED with optic-solidified adhesive protective layer saturating
Mirror；
F, the laminated devices LED lens are fixed in LED monochrome lamp bars, the lamp bead in LED monochrome lamp bar only has
Luminescence chip lights, unencapsulated fluorescent material in lamp bead, and in the present embodiment, the luminescence chip is the purple of wavelength of transmitted light 375nm
Outer chip, the green glow that feux rouges that the ultraviolet chip and fluorescent glue A send, blue light, fluorescent glue B send is combined, and obtains white light hair
Penetrate, that is, laminated devices quantum dot LED backlight is obtained.
Experimental example
The chromaticity coordinates and colour gamut of laminarity quantum dot LED backlight obtained in the preparation method described in testing example 1-3
Value, as a result as shown in table 1.
Table 1
| Example 1 | Example 2 | Example 3 | |
| Chromaticity coordinates | (0.30,0.29) | (0.28,0.27) | (0.32,0.29) |
| NTSC value | 99.3% | 95.6% | 101.5% |
It can be seen from the results above that equal using the luminous color of the LED backlight that the method described in embodiment 1-3 is obtained
In white light area, and with color gamut value high, color gamut value is up to more than NTSC95%.
Obviously, above-described embodiment is only intended to clearly illustrate example, and not to the restriction of implementation method.It is right
For those of ordinary skill in the art, can also make on the basis of the above description other multi-forms change or
Change.There is no need and unable to be exhaustive to all of implementation method.And the obvious change thus extended out or
Among changing still in the protection domain of the invention.
Claims (10)
1. a kind of preparation method of laminated devices quantum dot LED backlight, it is characterised in that comprise the following steps：
A, to adding photocuring glue in luminescent material A and being well mixed the two, obtain fluorescent glue A, the photocuring glue
It is 1-300 with the mass ratio of the luminescent material A:1；
B, the fluorescent glue A is coated on inner surface or the outer surface of LED lens in LED backlight, and consolidates the fluorescent glue
Change；
C, to adding photocuring glue in luminescent material B and being well mixed the two, obtain fluorescent glue B, the photocuring glue
It is 1-300 with the mass ratio of the luminescent material B:1；
D, the fluorescent glue B is coated on the fluorescent glue A surfaces, and solidifies the fluorescent glue B；
E, one layer of photocuring glue is coated in the fluorescent glue B surface, and make the optic-solidified adhesive water cure, obtain hierarchy
LED lens；
Wherein, the luminescent material A and/or luminescent material B includes quantum dot fluorescence powder.
2. the preparation method of laminated devices quantum dot LED backlight according to claim 1, it is characterised in that the quantum
Dot fluorescent powder is BaS, AgInS2、NaCl、Fe2O3、In2O3、InAs、InN、InP、CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、
GaAs、GaN、GaS、GaSe、InGaAs、MgS、MgSe、MgTe、PbS、PbSe、PbTe、Cd(SxSe1-x)、BaTiO3、PbZrO3、
CsPbCl3、CsPbBr3、CsPbI3In at least one.
3. the preparation method of laminated devices quantum dot LED backlight according to claim 2, it is characterised in that described luminous
Materials A and/or luminescent material B also include rare earth doped inorganic fluorescent powder.
4. the preparation method of laminated devices quantum dot LED backlight according to claim 3, it is characterised in that described inorganic
Fluorescent material is at least one in silicate, aluminate, phosphate, nitride, fluorination matter fluorescent powder.
5. the preparation method of laminated devices quantum dot LED backlight according to claim 4, it is characterised in that described luminous
The transmitting peak wavelength of materials A and the luminescent material B is 450-660nm.
6. the preparation method of laminated devices quantum dot LED backlight according to claim 5, it is characterised in that be coated on institute
It is 3-300 μm to state the fluorescent glue A thickness of LED lens surfaces, the fluorescent glue A through 230-400nm ultraviolet light 3-100s
Solidification.
7. the preparation method of laminated devices quantum dot LED backlight according to claim 6, it is characterised in that the fluorescence
The coating thickness of glue B is 3-300 μm, and the fluorescent glue B solidifies through the ultraviolet light 3-100s of 230-400nm.
8. the preparation method of laminated devices quantum dot LED backlight according to claim 7, it is characterised in that the step c
In, the coating thickness of the photocuring glue is 10-1000 μm, the photocuring glue through 230-400nm ultraviolet light
5-200s solidifies.
9. the preparation method of laminated devices quantum dot LED backlight according to claim 8, it is characterised in that the step e
Also include step f afterwards：The LED lens are fixed in LED monochrome lamp bars, the lamp bead in the LED monochromes lamp bar only has hair
Optical chip lights.
10. the preparation method of laminated devices quantum dot LED backlight according to claim 9, it is characterised in that described luminous
Chip is the ultraviolet chip of peak luminous wavelength 230-400nm or the blue chip of peak luminous wavelength 420-480nm.
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