CN106558644A - A kind of method for packing of laminated devices quantum dot LED lamp bead - Google Patents
A kind of method for packing of laminated devices quantum dot LED lamp bead Download PDFInfo
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- CN106558644A CN106558644A CN201611081666.XA CN201611081666A CN106558644A CN 106558644 A CN106558644 A CN 106558644A CN 201611081666 A CN201611081666 A CN 201611081666A CN 106558644 A CN106558644 A CN 106558644A
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- luminescent material
- quantum dot
- fluorescent
- packing
- lamp bead
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 61
- 239000011324 bead Substances 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000012856 packing Methods 0.000 title claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 63
- 239000000843 powder Substances 0.000 claims abstract description 45
- 238000004806 packaging method and process Methods 0.000 claims abstract description 11
- 239000003292 glue Substances 0.000 claims description 67
- 238000005538 encapsulation Methods 0.000 claims description 19
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 10
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 6
- 229920003023 plastic Polymers 0.000 claims description 6
- 239000004033 plastic Substances 0.000 claims description 6
- 229910017680 MgTe Inorganic materials 0.000 claims description 5
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 5
- 230000001186 cumulative effect Effects 0.000 claims description 5
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 5
- 150000002910 rare earth metals Chemical class 0.000 claims description 5
- 239000011780 sodium chloride Substances 0.000 claims description 5
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 4
- 229910003373 AgInS2 Inorganic materials 0.000 claims description 4
- 229910004613 CdTe Inorganic materials 0.000 claims description 4
- 229910005543 GaSe Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 4
- 229910019142 PO4 Inorganic materials 0.000 claims description 4
- 229910002665 PbTe Inorganic materials 0.000 claims description 4
- 229910020698 PbZrO3 Inorganic materials 0.000 claims description 4
- 229910007709 ZnTe Inorganic materials 0.000 claims description 4
- 229910002113 barium titanate Inorganic materials 0.000 claims description 4
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 4
- 239000010452 phosphate Substances 0.000 claims description 4
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 4
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 150000004645 aluminates Chemical class 0.000 claims description 2
- 238000001723 curing Methods 0.000 claims description 2
- 239000012467 final product Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- 239000004814 polyurethane Substances 0.000 claims description 2
- 238000007711 solidification Methods 0.000 claims description 2
- 230000008023 solidification Effects 0.000 claims description 2
- 238000003682 fluorination reaction Methods 0.000 claims 1
- 235000021180 meal component Nutrition 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 2
- 230000002950 deficient Effects 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- 239000011521 glass Substances 0.000 description 7
- 239000000047 product Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 2
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Abstract
The invention belongs to LED-backlit manufacture field, and in particular to a kind of method for packing of laminated devices quantum dot LED lamp bead.The half-wave width of the quanta point material used by this method is narrower, the color gamut value of energy significant increase LED lamp bead, and the LED lamp bead color gamut value of gained is up to NTSC more than 94%；Quantum dot fluorescence powder and other luminescent material substeps are injected the structure that layering is formed in LED；Can avoid in lamp bead later stage ignition, several luminescent substances react to each other, and destroy the structure of quantum dot fluorescent powder, cause light decay.This way can improve the reliability of LED lamp bead；White light LEDs lamp bead is obtained using quantum dot fluorescence powder, as quantum dot fluorescence powder launching efficiency is high, phosphor concentration is relatively low during packaging operation, reduces the difficulty and product fraction defective of packaging operation, is adapted to mass industrialized production；With great market prospect and economic worth.
Description
Technical field
The invention belongs to LED-backlit manufacture field, and in particular to a kind of method for packing of laminated devices quantum dot LED lamp bead.
Background technology
Into 21st century since, back light source technique quickly grows, and constantly has new technique, new product to release, LED-backlit
The market mainstream is become.Compared with traditional CCFL backlight, LED-backlit has high colour gamut, high brightness, long-life, energy-saving ring
Protect, many advantages, such as real-time color is controllable, the LED backlight of particularly high colour gamut makes TV using which, mobile phone, panel computer
There is more chromatic colour, color rendition Du Genggao Deng electronic product screen.Conventional LED backlight adopts blue light core at present
Piece excites the form of YA G yellow fluorescent powders, because lacking red color light component in backlight, color gamut value can only achieve NTSC 65%～
72%.In order to further improve color gamut value, technical staff generally employs blue chip while exciting red light fluorescent powder, green glow glimmering
The mode of light powder, but due to the half-wave width of existing use fluorescent material it is wider, even if therefore adopt in this way, also can only be by the color of backlight
Thresholding is promoted to NTSC 80% or so.Meanwhile, the launching efficiency of existing fluorescent material is low, is to realize that high colour gamut white light needs in a large number
Fluorescent material, causes the concentration (fluorescent material accounts for the ratio of encapsulation glue) of fluorescent material in LED encapsulation process very high, so as to greatly increase
The fraction defective of the difficulty and product of packaging operation is added.
In recent years, quanta point material is gradually taken seriously, and particularly quantum dot fluorescence powder has spectrum with size adjustable, sends out
A series of unique optical properties such as peak half-wave width, Stokes shift are big, launching efficiency is high are penetrated, by LED-backlit industry
Extensive concern.At present, quantum dot fluorescence powder realizes that the mode of high colour gamut white light mainly has：(1) quantum dot fluorescence powder is made
Optical film material, is filled in light guide plate or is affixed in LCD screen, is excited by blue light or ultraviolet light backlight lamp bead, obtains high color
Domain white light；(2) quantum dot fluorescence powder is made into glass tubing, is placed in screen side, excited by blue light or ultraviolet light backlight lamp bead,
Obtain high colour gamut white light.The existing Related product of both implementations is released, the quantum dot film TV of such as TCL.But, this two
Complex process, the phototranstormation efficiency for planting implementation is low, relatively costly, is difficult to realize extensive industrialization.
The content of the invention
For this purpose, the technical problem to be solved be overcome that prior art processes are complicated, phototranstormation efficiency is low, into
This is higher, is difficult to realize the technical bottleneck of extensive industrialization, so as to proposing that a kind of color gamut value is high, avoiding quantum dot fluorescence powder
Affected by extraneous dampness, oxygen and chip high temperature, yield is high, can mass industrialized production laminated devices quantum dot LED
The method for packing of lamp bead.
To solve above-mentioned technical problem, the invention discloses a kind of method for packing of cladded type quantum dot LED lamp bead, described
The step of method for packing, is as follows：
1) at least one quantum dot fluorescence powder is weighed as luminescent material A quantum dot fluorescences powder as luminescent material A；
2) encapsulation glue A is weighed, is poured into step 1) in the luminescent material A that weighed, it is stirred, is lighted
Materials A fluorescent glue；The mass ratio of the luminescent material and the encapsulation glue A is 1：1-300；
3) take step 2) obtained by luminescent material A fluorescent glues instill and be fixed with the LED support of ultraviolet light or blue chip
In, the luminescent material A fluorescent glue volumes of instillation account for the 5%-84% of internal stent volume；
4) by step 3) obtained by LED support be placed in baking oven, baking is processed, until luminescent material A fluorescence adhesive curings；
5) another kind of or various quantum dot fluorescent powders are weighed again as luminescent material B, the quantum contained by the luminescent material B
Dot fluorescent powder composition be different from the step 1) in the luminescent material A；
6) encapsulation glue B is taken, is poured into step 5) in the luminescent material B that weighed, it is stirred, obtains luminous material
Material B fluorescent glues；
7) take step 6) obtained by luminescent material B fluorescent glues, instill step 4) obtained by LED support in, the luminous material of instillation
The cumulative volume of material A and luminescent material B fluorescent glues accounts for the 85%-100% of internal stent volume；
8) by step 7) obtained by drop have luminescent material B fluorescent glues LED support baking process, until luminescent material B solidification,
Obtain final product laminated devices quantum dot LED lamp bead.
Preferably, quantum dot fluorescence powder contained by the luminescent material A is consisted of：BaS、AgInS2、NaCl、Fe2O3、
In2O3、InAs、InN、InP、CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、GaAs、GaN、GaS、GaSe、InGaAs、MgS、
MgSe、MgTe、PbS、PbSe、PbTe、Cd(SxSe1-x)、BaTiO3、PbZrO3、CsPbCl3、CsPbBr3、CsPbI3In at least
It is a kind of.
Preferably, be made up of at least one fluorescent material in the luminescent material B, the fluorescent material be quantum dot fluorescence powder or
The inorganic fluorescent powder of rare earth doped element；
Wherein, the quantum dot fluorescence powder is consisted of：BaS、AgInS2、NaCl、Fe2O3、In2O3、InAs、InN、InP、
CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、GaAs、GaN、GaS、GaSe、InGaAs、MgS、MgSe、MgTe、PbS、PbSe、
PbTe、Cd(SxSe1-x)、BaTiO3、PbZrO3、CsPbCl3、CsPbBr3、CsPbI3In at least one；
The inorganic fluorescent powder of the rare earth doped element is silicate, aluminate, phosphate, nitride, fluoride fluorescence
At least one in powder.
Preferably, the transmitting peak wavelength of the luminescent material is 450-660nm.
Preferably, the encapsulation glue A and encapsulation glue B are epoxiess packaging plastic, silicone packaging plastic, polyurethane
One kind in packaging plastic.
Preferably, the UV chip wavelength is 230-400nm.
Preferably, the blue chip wavelength is 420-480nm.
Preferably, the step 4) in, the temperature of the baking is 50-160 DEG C, and the time is 0.5-8h.
Preferably, the step 8) in, the temperature that the baking is processed is that the time is 0.5-8h at 70-160 DEG C.
The above-mentioned technical proposal of the present invention has advantages below compared to existing technology：
(1) compared with prior art, the half-wave width of quanta point material is narrower, the colour gamut of energy significant increase LED lamp bead
Value, present invention gained LED lamp bead color gamut value is up to NTSC more than 94%.
(2) compared with existing method for packing, (may be quantum dot or rare earth by quantum dot fluorescence powder and other luminescent materials
Fluorescent material) structure that layering is formed in LED is injected step by step.Can avoid in lamp bead later stage ignition, several luminescent substances
React to each other, and destroy the structure of quantum dot fluorescent powder, cause light decay.This way can improve the reliability of LED lamp bead.
(3) compared with existing packaging technology, the present invention obtains white light LEDs lamp bead using quantum dot fluorescence powder, due to quantum
Dot fluorescent powder launching efficiency is high, and during packaging operation, phosphor concentration is relatively low, reduces the difficulty and product of packaging operation not
Yield, is adapted to mass industrialized production.
Description of the drawings
In order that present disclosure is more likely to be clearly understood, the specific embodiment below according to the present invention is simultaneously combined
Accompanying drawing, the present invention is further detailed explanation, wherein
Fig. 1 is not instill the LED lamp bead schematic diagram of fluorescent glue A in embodiment 1；
Fig. 2 is the LED lamp bead schematic diagram of instillation fluorescent glue A in embodiment 2；
Fig. 3 is that the LED lamp bead schematic diagram of fluorescent glue B is further dropped on fluorescent glue A in embodiment 3；
Emission spectrum of the Fig. 4 for 1 gained laminated devices quantum dot LED lamp bead of embodiment；
In figure, reference is expressed as：1- supports；The 2- coats of metal；3- chips；4- bonding lines；5- luminescent material A；6- sends out
Luminescent material B；7 encapsulation glue A；8- encapsulates glue B.
Specific embodiment
Embodiment
Embodiment 1：Present embodiment discloses a kind of
1) the fluoride red light fluorescent powder that 0.75g wavelength of transmitted light is 638nm is weighed, is placed in container A.
2) the epoxiess encapsulation glue A of 2.35g is weighed, is poured into step 1) in the fluoride red light fluorescent powder that weighed,
Vacuum defoamation stirring is carried out, fluorescent glue A is obtained.
3) take a certain amount of step 2) obtained by fluorescent glue A instill and be fixed with blue chip (chip emission light wave is a length of
In LED support 450nm), the volume for controlling the fluorescent glue A of instillation accounts for the 35% of support glass shell internal capacity.
4) by step 3) obtained by LED support be placed in baking oven, toast 4h at 100 DEG C, make luminescent material A fluorescent glues solid
Change.
5) PbZrO that 0.08g wavelength of transmitted light is 544nm is weighed again3、Fe2O3Green quantum dot fluorescent powder, is placed in container B
In.
6) the silica type encapsulation glue B of 1.14g is weighed, is poured into step 5) PbZrO that weighed3、Fe2O3Green quantum
In dot fluorescent powder, vacuum defoamation stirring is carried out, obtain quantum dot fluorescence glue B.
7) take a certain amount of step 6) obtained by quantum dot fluorescent glue B instill step 4) obtained by gone out in roasting LED support,
The cumulative volume of the fluorescent glue A that control is instilled and quantum dot fluorescence glue B accounts for the 85% of support glass shell internal capacity.
8) by step 7) obtained by drip have quantum dot fluorescence glue B LED support be placed in baking oven, toast 0.5h at 100 DEG C,
Solidify quantum dot fluorescence glue B.Laminated devices quantum dot LED lamp bead is obtained, the color gamut value of lamp bead is high, good reliability.
Embodiment 2：
1) the CdSe red quantum dot fluorescent powders that 0.13g wavelength of transmitted light is 635nm are weighed, 0.09g wavelength of transmitted light is
MgTe, NaCl blue light quantum point fluorescent material of 458nm, is placed in container A.
2) the epoxiess encapsulation glue A of 5.03g is weighed, is poured into step 1) in the quantum dot fluorescence powder that weighed, carry out
Vacuum defoamation is stirred, and obtains quantum dot fluorescence glue A.
3) take a certain amount of step 2) obtained by quantum dot fluorescent glue A instill be fixed with UV chip (chip emission
The a length of 230nm of light wave) LED support in, the volume of fluorescent glue A for controlling to instill accounts for the 55% of support glass shell internal capacity.
4) by step 3) obtained by LED support be placed in baking oven, toast 1h at 150 DEG C, make quantum dot fluorescence glue A solidify.
5) silicate green-light fluorescent powder that 0.55g wavelength of transmitted light is 542nm is weighed again, is placed in container B.
6) the polyurethaness encapsulation glue B of 2.53g is weighed, is poured into step 5) in the green light fluorescent powder that weighed, carry out
Vacuum defoamation is stirred, and obtains fluorescent glue B.
7) take a certain amount of step 6) obtained by fluorescent glue B instill step 4) obtained by gone out in roasting LED support, control drop
The cumulative volume of the quantum dot fluorescence glue A for entering and fluorescent glue B accounts for the 100% of support glass shell internal capacity.
8) by step 7) obtained by drip have quantum dot fluorescence glue B LED support be placed in baking oven, toast 8h at 70 DEG C, make
Fluorescent glue B solidifies.Laminated devices quantum dot LED lamp bead is obtained, the color gamut value of lamp bead is high, good reliability.
Embodiment 3：
1) the GaS red quantum dot fluorescent powders that 0.07g wavelength of transmitted light is 655nm are weighed, is placed in container A.
2) the silica type encapsulation glue A of 0.72g is weighed, is poured into step 1) the GaS red quantum dot fluorescent powders that weighed
In, vacuum defoamation stirring is carried out, quantum dot fluorescence glue A is obtained.
3) take a certain amount of step 2) obtained by quantum dot fluorescent glue A instill be fixed with blue chip (chip emission light
Wavelength is 430nm) LED support in, the volume of fluorescent glue A for controlling to instill accounts for the 5% of support glass shell internal capacity.
4) by step 3) obtained by LED support be placed in baking oven, toast 8h at 50 DEG C, make quantum dot fluorescence glue A solidify.
5) the phosphate green glow dot fluorescent powder that 0.53g wavelength of transmitted light is 535nm is weighed again, is placed in container B.
6) the epoxiess encapsulation glue B of 2.55g is weighed, is poured into step 5) the phosphate green glow dot fluorescent powder that weighed
In, vacuum defoamation stirring is carried out, fluorescent glue B is obtained.
7) take a certain amount of step 6) obtained by fluorescent glue B instill step 4) obtained by gone out in roasting LED support, control drop
The cumulative volume of the quantum dot fluorescence glue A for entering and fluorescent glue B accounts for the 93% of support glass shell internal capacity.
8) by step 7) obtained by drip have quantum dot fluorescence glue B LED support be placed in baking oven, toast 1.5h at 160 DEG C,
Solidify fluorescent glue B.Laminated devices quantum dot LED lamp bead is obtained, the color gamut value of lamp bead is high, good reliability.
Experimental example
The chromaticity coordinates and color gamut value of the quantum dot LED lamp bead described in testing example 1-3, as a result as shown in table 1.
Table 1
The above results show, the quantum dot LED lamp bead obtained using the method for embodiment 1-3 it is photochromic all in white light area,
And there is high color gamut value, color gamut value is up to more than 94%.
Obviously, above-described embodiment is only intended to clearly illustrate example, and the not restriction to embodiment.It is right
For those of ordinary skill in the art, can also make on the basis of the above description other multi-forms change or
Change.There is no need to be exhaustive to all of embodiment.And thus it is extended obvious change or
Among changing still in the protection domain of the invention.
Claims (9)
1. a kind of method for packing of laminated devices quantum dot LED lamp bead, it is characterised in that as follows the step of the method for packing：
1) at least one quantum dot fluorescence powder is weighed as luminescent material A；
2) encapsulation glue A is weighed, is poured into step 1) in the luminescent material A that weighed, it is stirred, obtains luminescent material
A fluorescent glues；The mass ratio of the luminescent material and the encapsulation glue A is 1：1-300；
3) take step 2) obtained by luminescent material A fluorescent glues instill be fixed with the LED support of ultraviolet light or blue chip, drip
The luminescent material A fluorescent glue volumes for entering account for the 5%-84% of internal stent volume；
4) by step 3) obtained by LED support be placed in baking oven, baking is processed, until luminescent material A fluorescence adhesive curings；
5) luminescent material B is weighed again, and the quantum dot fluorescence meal component contained by the luminescent material B is different from the step 1) in
The luminescent material A；
6) encapsulation glue B is taken, is poured into step 5) in the luminescent material B that weighed, it is stirred, obtains luminescent material B
Fluorescent glue；
7) take step 6) obtained by luminescent material B fluorescent glues, instill step 4) obtained by LED support in, the luminescent material A of instillation with
The cumulative volume of luminescent material B fluorescent glues accounts for the 85%-100% of internal stent volume；
8) by step 7) obtained by drop have luminescent material B fluorescent glues LED support baking process, until luminescent material B solidification, obtain final product
Laminated devices quantum dot LED lamp bead.
2. method for packing as claimed in claim 1, it is characterised in that the quantum dot fluorescence powder contained by the luminescent material A
Consist of：BaS、AgInS2、NaCl、Fe2O3、In2O3、InAs、InN、InP、CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、
GaAs、GaN、GaS、GaSe、InGaAs、Mg S、MgSe、MgTe、PbS、PbSe、PbTe、Cd(SxSe1-x)、BaTiO3、
PbZrO3、CsPbCl3、CsPbBr3、CsPbI3In at least one.
3. method for packing as claimed in claim 2, it is characterised in that by least one fluorescent material group in the luminescent material B
Into the fluorescent material is the inorganic fluorescent powder of quantum dot fluorescence powder or rare earth doped element；
Wherein, the quantum dot fluorescence powder is consisted of：BaS、AgInS2、NaCl、Fe2O3、In2O3、InAs、InN、InP、CdS、
CdSe、CdTe、ZnS、ZnSe、ZnTe、GaAs、GaN、GaS、GaSe、InGaAs、MgS、MgSe、MgTe、PbS、PbSe、PbTe、
Cd(SxSe1-x)、BaTiO3、PbZrO3、CsPbCl3、CsPbBr3、CsPbI3In at least one；
The inorganic fluorescent powder of the rare earth doped element be silicate, aluminate, phosphate, nitride, fluorination matter fluorescent powder in
At least one.
4. method for packing as claimed in claim 3, it is characterised in that the transmitting peak wavelength of the luminescent material is 450-
660nm。
5. method for packing as claimed in claim 4, it is characterised in that the encapsulation glue A and encapsulation glue B are epoxiess
One kind in packaging plastic, silicone packaging plastic, polyurethane packaging plastic.
6. method for packing as claimed in claim 5, it is characterised in that the UV chip wavelength is 230-400nm.
7. method for packing as claimed in claim 6, it is characterised in that the blue chip wavelength is 420-480nm.
8. method for packing as claimed in claim 7, it is characterised in that the step 4) in, the temperature of the baking is 50-
160 DEG C, the time is 0.5-8h.
9. method for packing as claimed in claim 8, it is characterised in that the step 8) in, the temperature that the baking is processed is
At 70-160 DEG C, the time is 0.5-8h.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611081666.XA CN106558644A (en) | 2016-11-30 | 2016-11-30 | A kind of method for packing of laminated devices quantum dot LED lamp bead |
| PCT/CN2017/091991 WO2018099080A1 (en) | 2016-11-30 | 2017-07-06 | Layered-quantum-dot led lamp-bead packaging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611081666.XA CN106558644A (en) | 2016-11-30 | 2016-11-30 | A kind of method for packing of laminated devices quantum dot LED lamp bead |
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| CN106558644A true CN106558644A (en) | 2017-04-05 |
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| CN201611081666.XA Pending CN106558644A (en) | 2016-11-30 | 2016-11-30 | A kind of method for packing of laminated devices quantum dot LED lamp bead |
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| Country | Link |
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| CN (1) | CN106558644A (en) |
| WO (1) | WO2018099080A1 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107256912A (en) * | 2017-06-06 | 2017-10-17 | 江苏鸿利国泽光电科技有限公司 | Improve the layering method for packing and layering encapsulation LED of LED light effect |
| WO2018099080A1 (en) * | 2016-11-30 | 2018-06-07 | 深圳市聚飞光电股份有限公司 | Layered-quantum-dot led lamp-bead packaging method |
| CN108767085A (en) * | 2018-04-27 | 2018-11-06 | 南昌大学 | A kind of White-light LED package structure and packaging method |
| CN108922958A (en) * | 2018-08-01 | 2018-11-30 | 苏州星烁纳米科技有限公司 | White light LEDs and display device |
| CN109166955A (en) * | 2018-08-29 | 2019-01-08 | 开发晶照明（厦门）有限公司 | Light-emitting diode encapsulation structure with layering fluorescent powder colloid |
| CN110459664A (en) * | 2019-07-31 | 2019-11-15 | 厦门多彩光电子科技有限公司 | A kind of packaging method of laminated devices quantum dot LED lamp bead |
| CN111463337A (en) * | 2019-01-22 | 2020-07-28 | 深圳市斯迈得半导体有限公司 | High color rendering index L ED light source of red and green double-color combination |
| CN111933781A (en) * | 2020-07-28 | 2020-11-13 | 佛山市国星光电股份有限公司 | LED device and LED lamp |
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| CN110459664A (en) * | 2019-07-31 | 2019-11-15 | 厦门多彩光电子科技有限公司 | A kind of packaging method of laminated devices quantum dot LED lamp bead |
| CN111933781A (en) * | 2020-07-28 | 2020-11-13 | 佛山市国星光电股份有限公司 | LED device and LED lamp |
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| WO2018099080A1 (en) | 2018-06-07 |
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Effective date of registration: 20190114 Address after: 516000 No. 6 Lujiao Road, Huinan High-tech Industrial Park, Huizhou City, Guangdong Province Applicant after: Huizhou flying photoelectric Co., Ltd. Address before: 518000 Building C, 1-3 and E, Building 4, Egongling Industrial Zone, Egongling Community, Pinghu Street, Longgang District, Shenzhen City, Guangdong Province Applicant before: Shenzhen City Jufei Optoelectronic Co., Ltd. |
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Application publication date: 20170405 |