CN106558645A - A kind of method for packing of cladded type quantum dot LED lamp bead - Google Patents

A kind of method for packing of cladded type quantum dot LED lamp bead Download PDF

Info

Publication number
CN106558645A
CN106558645A CN201611081715.XA CN201611081715A CN106558645A CN 106558645 A CN106558645 A CN 106558645A CN 201611081715 A CN201611081715 A CN 201611081715A CN 106558645 A CN106558645 A CN 106558645A
Authority
CN
China
Prior art keywords
quantum dot
glue
packing
powder
lamp bead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201611081715.XA
Other languages
Chinese (zh)
Inventor
张志宽
高丹鹏
邢其彬
苏宏波
王旭改
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huizhou flying photoelectric Co., Ltd.
Original Assignee
Shenzhen Jufei Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Jufei Optoelectronics Co Ltd filed Critical Shenzhen Jufei Optoelectronics Co Ltd
Priority to CN201611081715.XA priority Critical patent/CN106558645A/en
Publication of CN106558645A publication Critical patent/CN106558645A/en
Priority to PCT/CN2017/091997 priority patent/WO2018099082A1/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • H01L33/504Elements with two or more wavelength conversion materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/507Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0041Processes relating to semiconductor body packages relating to wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/005Processes relating to semiconductor body packages relating to encapsulations

Abstract

The invention belongs to LED-backlit manufacture field, and in particular to a kind of method for packing of cladded type quantum dot LED lamp bead.The half-wave width of the quanta point material used by the present invention is narrower, the color gamut value of energy significant increase LED lamp bead, and gained LED lamp bead color gamut value is up to NTSC more than 93%;Pre-coat is carried out to quanta point material using epoxy resin, the extraneous erosion of dampness, oxygen to quanta point material is intercepted, is improve the reliability of lamp bead;White light LEDs lamp bead is obtained using quantum dot fluorescence powder, as quantum dot fluorescence powder launching efficiency is high, phosphor concentration is relatively low during packaging operation, reduces the difficulty and product fraction defective of packaging operation, is adapted to mass industrialized production;With great market prospect and economic worth.

Description

A kind of method for packing of cladded type quantum dot LED lamp bead
Technical field
The invention belongs to LED-backlit manufacture field, and in particular to a kind of method for packing of cladded type quantum dot LED lamp bead.
Background technology
Into 21st century since, back light source technique quickly grows, and constantly has new technique, new product to release, LED-backlit The market mainstream is become.Compared with traditional CCFL backlight, LED-backlit has high colour gamut, high brightness, long-life, energy-saving ring Protect, many advantages, such as real-time color is controllable, the LED backlight of particularly high colour gamut makes TV using which, mobile phone, panel computer There is more chromatic colour, color rendition Du Genggao Deng electronic product screen.Conventional LED backlight adopts blue light core at present Piece excites the form of YAG yellow fluorescent powders, because lacking red color light component in backlight, color gamut value can only achieve NTSC65%~ 72%.In order to further improve color gamut value, technical staff generally employs blue chip while exciting red light fluorescent powder, green glow glimmering The mode of light powder, but due to the half-wave width of existing use fluorescent material it is wider, even if therefore adopt in this way, also can only be by the color of backlight Thresholding is promoted to NTSC 80% or so.Meanwhile, the launching efficiency of existing fluorescent material is low, is to realize that high colour gamut white light needs in a large number Fluorescent material, causes the concentration (fluorescent material accounts for the ratio of encapsulation glue) of fluorescent material in LED encapsulation process very high, so as to greatly increase The fraction defective of the difficulty and product of packaging operation is added.
In recent years, quanta point material is gradually taken seriously, and particularly quantum dot fluorescence powder has spectrum with size adjustable, sends out A series of unique optical properties such as peak half-wave width, Stokes shift are big, launching efficiency is high are penetrated, by LED-backlit industry Extensive concern.At present, quantum dot fluorescence powder realizes that the mode of high colour gamut white light mainly has:(1) quantum dot fluorescence powder is made Optical film material, is filled in light guide plate or is affixed in LCD screen, is excited by blue light or ultraviolet light backlight lamp bead, obtains high color Domain white light;(2) quantum dot fluorescence powder is made into glass tubing, is placed in screen side, excited by blue light or ultraviolet light backlight lamp bead, Obtain high colour gamut white light.The existing Related product of both implementations is released, the quantum dot film TV of such as TCL.But, this two Complex process, the phototranstormation efficiency for planting implementation is low, relatively costly, is difficult to realize extensive industrialization.
The content of the invention
For this purpose, the technical problem to be solved be overcome that prior art processes are complicated, phototranstormation efficiency is low, into This is higher, is difficult to realize the technical bottleneck of extensive industrialization, so as to proposing that a kind of color gamut value is high, avoiding quantum dot fluorescence powder Affected by extraneous dampness, oxygen and chip high temperature, yield is high, can mass industrialized production cladded type quantum dot LED The method for packing of lamp bead.
To solve above-mentioned technical problem, the invention discloses a kind of method for packing of cladded type quantum dot LED lamp bead, described The step of method for packing, is as follows:
1) at least two fluorescent material are weighed, is mixed by any ratio and is obtained luminescent material, wherein at least one in the fluorescent material It is quantum dot fluorescence powder to plant fluorescent material;
2) encapsulation glue is weighed for the first time, pour into step 1) in weighed luminescent material, the luminescent material and described The mass ratio of encapsulation glue is 1:1-300, is then stirred, and obtains quantum dot fluorescence glue;
3) by step 2) obtained by the baking of quantum dot fluorescent glue process, make quantum dot fluorescence adhesive curing;
4) by step 3) obtained by gone out to bake the fluorescent glue of solidification and be ground, until quantum dot fluorescence glue grinds to form granule Shape;
5) by step 4) grinding gained particulate matter carry out wet ball grinding process;Then drying and processing is carried out, until being had There is the powder of the single quantum dot or multi layered quantum dots or other luminescent materials of epoxy resin cladding;
6) weigh encapsulation glue for the second time, pour step 5 into) obtained by powder in, be stirred, obtain with epoxy The quantum dot fluorescence glue of class wrapper glue cladding;The luminescent material and with it is described weigh for the second time encapsulation glue mass ratio be 1:0.1-200;
7) take step 6) obtained by have epoxy resin cladding quantum dot fluorescence glue instill be fixed with ultraviolet light or indigo plant In the LED support of optical chip;
8) by step 7) obtained by drip have quantum dot fluorescence glue LED support carry out baking process, until epoxy resin coat Quantum dot fluorescence adhesive curing, that is, obtain LED lamp bead.
Preferably, the quantum dot fluorescence powder is consisted of:BaS、AgInS2、NaCl、Fe2O3、In2O3、InAs、InN、 InP、CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、GaAs、GaN、GaS、GaSe、InGaAs、MgS、MgSe、MgTe、PbS、 PbSe、PbTe、Cd(SxSe1-x)、BaTiO3、PbZrO3、CsPbCl3、CsPbBr3、CsPbI3In at least one.
Preferably, in the luminescent material, the fluorescent material in addition to quantum dot fluorescence powder is the nothing of rare earth doped element Machine fluorescent material;
The inorganic fluorescent powder is silicate, aluminate, phosphate, nitride, at least one being fluorinated in matter fluorescent powder.
Preferably, the transmitting peak wavelength of the luminescent material is 450-660nm.
Preferably, the encapsulation glue be epoxiess packaging plastic, silicone packaging plastic, in polyurethane packaging plastic at least It is a kind of.
Preferably, the step 5) in, wet ball grinding process uses planetary ball mill, and rotating speed is 240-2000rpm.
Preferably, the UV chip wavelength is 230-400nm;The blue chip wavelength is 420-480nm.
Preferably, the step 3) in, the temperature of the baking is 100-150 DEG C, and the time is 0.5-2h.
Preferably, the step 3) in, the temperature of drying and processing is 40-60 DEG C.
It is more highly preferred to, the step 8) in, the temperature that the baking is processed is 80-160 DEG C, and the time is 0.5-8h.
The above-mentioned technical proposal of the present invention has advantages below compared to existing technology:
(1) compared with prior art, the half-wave width of quanta point material is narrower, the colour gamut of energy significant increase LED lamp bead Value, present invention gained LED lamp bead color gamut value is up to NTSC more than 93%.
(2) compared with existing method for packing, pre-coat is carried out to quanta point material using epoxy resin, is intercepted extraneous wet The erosion of gas, oxygen to quanta point material, improves the reliability of lamp bead.
(3) compared with existing packaging technology, the present invention obtains white light LEDs lamp bead using quantum dot fluorescence powder, due to quantum Dot fluorescent powder launching efficiency is high, and during packaging operation, phosphor concentration is relatively low, reduces the difficulty and product of packaging operation not Yield, is adapted to mass industrialized production.
Description of the drawings
In order that present disclosure is more likely to be clearly understood, the specific embodiment below according to the present invention is simultaneously combined Accompanying drawing, the present invention is further detailed explanation, wherein
Fig. 1 is the schematic diagram of the LED lamp bead described in embodiment obtained by method powder.
In figure, reference is expressed as:1- supports;The 2- coats of metal;3- chips;4- bonding lines;5- cladded type luminescent materials A;6- cladded type luminescent material B;7 encapsulation glue.
Specific embodiment
Embodiment
Embodiment 1:
1) the phosphate red light fluorescent powder that 0.75g wavelength of transmitted light is 635nm is weighed, weighing 0.04g wavelength of transmitted light is The GaSe green quantum dot fluorescent powders of 537nm, are collectively disposed in container.
2) epoxy resin of 1.50g is weighed, is poured into step 1) in the luminescent material that weighed, carry out vacuum defoamation and stir Mix, obtain quantum dot fluorescence glue.
3) by step 2) obtained by quantum dot fluorescent glue be placed in baking oven 0.5h toasted at 150 DEG C, make quantum dot fluorescence glue Solidification.
4) by step 3) obtained by gone out bake solidification fluorescent glue be placed in agate mortar, be ground, by quantum dot fluorescence Glue grinds to form graininess.
5) by step 4) grinding gained particulate matter is placed in planetary ball mill, adds appropriate ethanol to carry out wet ball grinding, Drum's speed of rotation is controlled for 240rpm.Ball milling terminates to be dried at 60 DEG C, is uniformly dispersed and has epoxy resin The quantum dot fluorescence powder powder of cladding.
6) weigh 3.25g silica type encapsulation glue, pour step 5 into) obtained by have epoxy resin cladding quantum dot it is glimmering In light powder powder, vacuum stirring is carried out, obtain the quantum dot fluorescence glue that glue cladding is encapsulated with epoxiess.
7) take a certain amount of step 6) obtained by have epoxy resin cladding quantum dot fluorescence glue instill be fixed with indigo plant In the LED support of optical chip (a length of 445nm of chip emission light wave).
8) by step 7) obtained by drip have quantum dot fluorescence glue LED support be placed in baking oven, toast 8h at 120 DEG C, make The quantum dot fluorescence adhesive curing of epoxy resin cladding, that is, obtain LED lamp bead.
Embodiment 2:
1) the MgS red quantum dot fluorescent powders that 0.17g wavelength of transmitted light is 644nm are weighed, 0.10g wavelength of transmitted light is The GaAs green quantum dot fluorescent powders of 541nm, and the aluminate blue light fluorescent powder that 0.58g wavelength of transmitted light is 458nm, jointly It is placed in container.
2) epoxy resin of 2.00g is weighed, is poured into step 1) in the luminescent material that weighed, carry out vacuum defoamation and stir Mix, obtain quantum dot fluorescence glue.
3) by step 2) obtained by quantum dot fluorescent glue be placed in baking oven 1h toasted at 120 DEG C, make quantum dot fluorescence glue solid Change.
4) by step 3) obtained by gone out bake solidification fluorescent glue be placed in stainless steel mortar, be ground, quantum dot is glimmering Optical cement grinds to form graininess.
5) by step 4) grinding gained particulate matter is placed in planetary ball mill, adds appropriate ethanol to carry out wet ball grinding, Drum's speed of rotation is controlled for 1300rpm.Ball milling terminates to be dried at 50 DEG C, is uniformly dispersed and has epoxy resin The quantum dot fluorescence powder powder of cladding.
6) weigh 4.05g polyurethaness encapsulation glue, pour step 5 into) obtained by have epoxy resin cladding quantum dot In phosphor powder, vacuum stirring is carried out, obtain the quantum dot fluorescence glue that glue cladding is encapsulated with epoxiess.
7) take a certain amount of step 6) obtained by have epoxy resin cladding quantum dot fluorescence glue instill be fixed with purple In the LED support of outer optical chip (a length of 280nm of chip emission light wave).
8) by step 7) obtained by drip have quantum dot fluorescence glue LED support be placed in baking oven, toast 3h at 80 DEG C, make ring The quantum dot fluorescence adhesive curing of oxygen resin-coating, that is, obtain LED lamp bead.
Embodiment 3:
1) the fluoride red light fluorescent powder that 3.45g wavelength of transmitted light is 620nm is weighed, weighing 0.12g wavelength of transmitted light is The MgTe green quantum dot fluorescent powders of 537nm, are collectively disposed in container.
2) epoxy resin of 2.75g is weighed, is poured into step 1) in the luminescent material that weighed, carry out vacuum defoamation and stir Mix, obtain quantum dot fluorescence glue.
3) by step 2) obtained by quantum dot fluorescent glue be placed in baking oven 1h toasted at 100 DEG C, make quantum dot fluorescence glue solid Change.
4) by step 3) obtained by gone out bake solidification fluorescent glue be placed in agate mortar, be ground, by quantum dot fluorescence Glue grinds to form graininess.
5) by step 4) grinding gained particulate matter is placed in planetary ball mill, adds appropriate ethanol to carry out wet ball grinding, Drum's speed of rotation is controlled for 2000rpm.Ball milling terminates to be dried at 40 DEG C, is uniformly dispersed and has epoxy resin The quantum dot fluorescence powder powder of cladding.
6) weigh 3.50g silica type encapsulation glue, pour step 5 into) obtained by have epoxy resin cladding quantum dot it is glimmering In light powder powder, vacuum stirring is carried out, obtain the quantum dot fluorescence glue that glue cladding is encapsulated with epoxiess.
7) take a certain amount of step 6) obtained by have epoxy resin cladding quantum dot fluorescence glue instill be fixed with indigo plant In the LED support of optical chip (a length of 480nm of chip emission light wave).
8) by step 7) obtained by drip have quantum dot fluorescence glue LED support be placed in baking oven, toast 0.5h at 160 DEG C, The quantum dot fluorescence adhesive curing for coating epoxy resin, that is, obtain LED lamp bead.
Experimental example
The chromaticity coordinates and color gamut value of the quantum dot LED lamp bead described in testing example 1-3, as a result as shown in table 1.
Table 1
The above results show, the quantum dot LED lamp bead obtained using the method for embodiment 1-3 it is photochromic all in white light area, And there is high color gamut value, color gamut value is up to more than 93%.
Obviously, above-described embodiment is only intended to clearly illustrate example, and the not restriction to embodiment.It is right For those of ordinary skill in the art, can also make on the basis of the above description other multi-forms change or Change.There is no need to be exhaustive to all of embodiment.And thus it is extended obvious change or Among changing still in the protection domain of the invention.

Claims (10)

1. a kind of method for packing of cladded type quantum dot LED lamp bead, it is characterised in that as follows the step of the method for packing:
1) at least two fluorescent material are weighed, is mixed by any ratio and is obtained luminescent material, wherein at least one of described fluorescent material is glimmering Light powder is quantum dot fluorescence powder;
2) encapsulation glue is weighed for the first time, pour into step 1) in weighed luminescent material, the luminescent material and the encapsulation The mass ratio of glue is 1:1-300, is then stirred, and obtains quantum dot fluorescence glue;
3) by step 2) obtained by the baking of quantum dot fluorescent glue process, make quantum dot fluorescence adhesive curing;
4) by step 3) obtained by gone out to bake the fluorescent glue of solidification and be ground, until quantum dot fluorescence glue grinds to form graininess;
5) by step 4) grinding gained particulate matter carry out wet ball grinding process;Then drying and processing is carried out, until obtaining with ring The single quantum dot or multi layered quantum dots or the powder of other luminescent materials of oxygen resin-coating;
6) weigh encapsulation glue for the second time, pour step 5 into) obtained by powder in, be stirred, obtain with epoxiess envelope The quantum dot fluorescence glue of dress glue cladding;The luminescent material and with it is described weigh for the second time encapsulation glue mass ratio be 1: 0.1-200;
7) take step 6) obtained by have epoxy resin cladding quantum dot fluorescence glue instill be fixed with ultraviolet light or blue light core In the LED support of piece;
8) by step 7) obtained by drip have quantum dot fluorescence glue LED support carry out baking process, until epoxy resin cladding amount Son point fluorescence adhesive curing, that is, obtain LED lamp bead.
2. method for packing as claimed in claim 1, it is characterised in that the quantum dot fluorescence powder is consisted of:BaS、 AgInS2、NaCl、Fe2O3、In2O3、InAs、InN、InP、CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、GaAs、GaN、GaS、 GaSe、InGaAs、MgS、MgSe、MgTe、PbS、PbSe、PbTe、Cd(SxSe1-x)、BaTiO3、PbZrO3、CsPbCl3、 CsPbBr3、CsPbI3In at least one.
3. method for packing as claimed in claim 2, it is characterised in that in the luminescent material, except quantum dot fluorescence powder with Outer fluorescent material is the inorganic fluorescent powder of rare earth doped element;
The inorganic fluorescent powder is silicate, aluminate, phosphate, nitride, at least one being fluorinated in matter fluorescent powder.
4. method for packing as claimed in claim 3, it is characterised in that the transmitting peak wavelength of the luminescent material is 450- 660nm。
5. method for packing as claimed in claim 4, it is characterised in that the encapsulation glue is epoxiess packaging plastic, organosilicon At least one in class wrapper glue, polyurethane packaging plastic.
6. method for packing as claimed in claim 5, it is characterised in that the step 5) in, wet ball grinding process is used Planetary ball mill, rotating speed are 240-2000rpm.
7. method for packing as claimed in claim 6, it is characterised in that the UV chip wavelength is 230-400nm;It is described Blue chip wavelength is 420-480nm.
8. method for packing as claimed in claim 7, it is characterised in that the step 3) in, the temperature of the baking is 100- 150 DEG C, the time is 0.5-2h.
9. method for packing as claimed in claim 8, it is characterised in that the step 3) in, the temperature of drying and processing is 40-60 ℃。
10. method for packing as claimed in claim 9, it is characterised in that the step 8) in, the temperature that the baking is processed is 80-160 DEG C, the time is 0.5-8h.
CN201611081715.XA 2016-11-30 2016-11-30 A kind of method for packing of cladded type quantum dot LED lamp bead Pending CN106558645A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201611081715.XA CN106558645A (en) 2016-11-30 2016-11-30 A kind of method for packing of cladded type quantum dot LED lamp bead
PCT/CN2017/091997 WO2018099082A1 (en) 2016-11-30 2017-07-06 Method for packaging coated quantum-dot led lamp bead

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201611081715.XA CN106558645A (en) 2016-11-30 2016-11-30 A kind of method for packing of cladded type quantum dot LED lamp bead

Publications (1)

Publication Number Publication Date
CN106558645A true CN106558645A (en) 2017-04-05

Family

ID=58445751

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201611081715.XA Pending CN106558645A (en) 2016-11-30 2016-11-30 A kind of method for packing of cladded type quantum dot LED lamp bead

Country Status (2)

Country Link
CN (1) CN106558645A (en)
WO (1) WO2018099082A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018099082A1 (en) * 2016-11-30 2018-06-07 深圳市聚飞光电股份有限公司 Method for packaging coated quantum-dot led lamp bead
WO2019000783A1 (en) * 2017-06-27 2019-01-03 深圳Tcl新技术有限公司 Led, backlight module, and liquid crystal display device
CN109233804A (en) * 2018-09-05 2019-01-18 纳晶科技股份有限公司 Quantum dot powder and preparation method thereof, luminescent device, quantum dot composition, quantum dot film and preparation method thereof
CN110137334A (en) * 2019-05-28 2019-08-16 深圳扑浪创新科技有限公司 A kind of infrared LED device of quantum dot fluorescence conversion
CN113480713A (en) * 2021-06-30 2021-10-08 上海交通大学 Preparation method of polyurea quantum dot fluorescent microspheres

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006321966A (en) * 2004-09-28 2006-11-30 Kyocera Corp Fluorescent structural body, superfine particle structural body and composite, and light emitting device and light emitting device assembly
CN101137738A (en) * 2005-03-08 2008-03-05 皇家飞利浦电子股份有限公司 Illumination system comprising a radiation source and a luminescent material
CN102321479A (en) * 2011-09-30 2012-01-18 钟瑜 Dual core-shell fluorescent material and preparation method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103030822B (en) * 2012-12-20 2014-09-24 纳晶科技股份有限公司 Quantum dots powder and preparation method thereof, silicone lens and manufacture method thereof and LED lamp
CN103456865B (en) * 2013-09-03 2016-08-17 易美芯光(北京)科技有限公司 A kind of LED encapsulation
CN104633551A (en) * 2015-03-03 2015-05-20 深圳市华星光电技术有限公司 White LED, backlight module and liquid crystal display device
CN106558645A (en) * 2016-11-30 2017-04-05 深圳市聚飞光电股份有限公司 A kind of method for packing of cladded type quantum dot LED lamp bead

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006321966A (en) * 2004-09-28 2006-11-30 Kyocera Corp Fluorescent structural body, superfine particle structural body and composite, and light emitting device and light emitting device assembly
CN101137738A (en) * 2005-03-08 2008-03-05 皇家飞利浦电子股份有限公司 Illumination system comprising a radiation source and a luminescent material
CN102321479A (en) * 2011-09-30 2012-01-18 钟瑜 Dual core-shell fluorescent material and preparation method thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018099082A1 (en) * 2016-11-30 2018-06-07 深圳市聚飞光电股份有限公司 Method for packaging coated quantum-dot led lamp bead
WO2019000783A1 (en) * 2017-06-27 2019-01-03 深圳Tcl新技术有限公司 Led, backlight module, and liquid crystal display device
CN109233804A (en) * 2018-09-05 2019-01-18 纳晶科技股份有限公司 Quantum dot powder and preparation method thereof, luminescent device, quantum dot composition, quantum dot film and preparation method thereof
CN109233804B (en) * 2018-09-05 2021-07-20 纳晶科技股份有限公司 Quantum dot powder and preparation method thereof, light-emitting device, quantum dot composition, quantum dot film and preparation method thereof
CN110137334A (en) * 2019-05-28 2019-08-16 深圳扑浪创新科技有限公司 A kind of infrared LED device of quantum dot fluorescence conversion
CN113480713A (en) * 2021-06-30 2021-10-08 上海交通大学 Preparation method of polyurea quantum dot fluorescent microspheres
CN113480713B (en) * 2021-06-30 2023-01-24 上海交通大学 Preparation method of polyurea quantum dot fluorescent microspheres

Also Published As

Publication number Publication date
WO2018099082A1 (en) 2018-06-07

Similar Documents

Publication Publication Date Title
CN106558645A (en) A kind of method for packing of cladded type quantum dot LED lamp bead
CN106449908B (en) A kind of packaging method of the LED lamp bead based on quantum dot fluorescence film
CN105870302B (en) A kind of packaging method of high colour gamut white light quanta point LED
CN106449943A (en) Method for molding and sealing inverted quantum dot LED lamp bead
CN106558644A (en) A kind of method for packing of laminated devices quantum dot LED lamp bead
CN106384776B (en) A kind of packaging method of sandwich type quantum dot LED lamp bead
CN105679894B (en) A kind of production method of the high colour gamut white light LEDs lamp bead based on red light quantum point
CN106784260A (en) A kind of preparation method of direct LED backlight
CN108610023B (en) Preparation method of ceramic composite material, ceramic composite material and wavelength converter
CN103869391A (en) Color reinforcing film, and utilization structure, utilization method and manufacturing method of the color reinforcing film
CN105810674A (en) Light emitting diode (LED) luminous device and backlight module employing same
CN102800794A (en) Optical wavelength conversion device and application thereof in white light emitting device
CN106935693A (en) Luminous quantum dot CSP backlights in a kind of five face and preparation method thereof
CN105742462B (en) A kind of high colour gamut white light implementation that ultraviolet light is combined with multi layered quantum dots
CN105679921B (en) A kind of production method of the high colour gamut white light LEDs lamp bead of multi layered quantum dots combination
CN109742220B (en) White light LED containing liquid quantum dots and preparation method thereof
CN106784177A (en) A kind of method for packing of quantum dot LED lamp bead
CN207217528U (en) A kind of LED light source
CN106784238A (en) The preparation method of quantum dot lens-type direct LED backlight
CN105514251B (en) A kind of high colour gamut white light LEDs implementation method using red light fluorescent powder
CN105845810B (en) A kind of production method of the high colour gamut white light LEDs lamp bead based on green light quantum point
CN107298582A (en) A kind of ceramic material and preparation method thereof and fluorescence ceramics device
CN111276593A (en) Wide color gamut backlight source for display
CN106601890A (en) Quantum dot lamp bead preparation method and QLED display
CN105552198B (en) One kind uses MxSr1‑xTiO3:Eu2+, Mn2+The high colour gamut white light LEDs implementation method of blue light fluorescent powder

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right

Effective date of registration: 20190109

Address after: 516000 No. 6 Lujiao Road, Huinan High-tech Industrial Park, Huizhou City, Guangdong Province

Applicant after: Huizhou flying photoelectric Co., Ltd.

Address before: 518000 Building C, 1-3 and E, Building 4, Egongling Industrial Zone, Egongling Community, Pinghu Street, Longgang District, Shenzhen City, Guangdong Province

Applicant before: Shenzhen City Jufei Optoelectronic Co., Ltd.

TA01 Transfer of patent application right
RJ01 Rejection of invention patent application after publication

Application publication date: 20170405

RJ01 Rejection of invention patent application after publication