CN106784175B - The manufacturing method and substrate of the epitaxy composite sapphire substrate of LED display module - Google Patents
The manufacturing method and substrate of the epitaxy composite sapphire substrate of LED display module Download PDFInfo
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- CN106784175B CN106784175B CN201611079085.2A CN201611079085A CN106784175B CN 106784175 B CN106784175 B CN 106784175B CN 201611079085 A CN201611079085 A CN 201611079085A CN 106784175 B CN106784175 B CN 106784175B
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- epitaxy
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- feux rouges
- square piece
- sapphire substrate
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- 239000000758 substrate Substances 0.000 title claims abstract description 75
- 238000000407 epitaxy Methods 0.000 title claims abstract description 62
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 32
- 239000010980 sapphire Substances 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000002131 composite material Substances 0.000 title claims abstract description 22
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910000679 solder Inorganic materials 0.000 claims abstract description 9
- 238000002844 melting Methods 0.000 claims abstract description 8
- 230000008018 melting Effects 0.000 claims abstract description 8
- 238000000926 separation method Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 7
- 230000006870 function Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 206010052804 Drug tolerance Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000026781 habituation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present embodiments relate to the manufacturing methods and substrate of a kind of epitaxy composite sapphire substrate of LED display module, are patterned fluting in a side surface of sapphire substrate, form multiple equidistant grooves；Slot to be filled is made between (3m-2) a groove and (3m-1) a groove in the multiple groove；M is natural number；Silicate solder is quantitatively inserted in the slot to be filled, and is heated to melting in high temperature furnace apparatus；After second melting, it is implanted into feux rouges epitaxy substrate square piece in the filling slot, and a side surface of the feux rouges epitaxy substrate square piece and the sapphire substrate is in same plane；It anneals according to the temperature curve of the silicate solder；SiO is deposited in the groove2, form separation layer；One side surface mill and is polished to get the epitaxy composite sapphire substrate is arrived.
Description
Technical field
The present invention relates to a kind of systems of the epitaxy composite sapphire substrate of semiconductor field more particularly to LED display module
Make method and substrate.
Background technique
Develop to today in traditional semiconductor display product, high density field we habituation has been defined as picture
Plain spacing is less than the display of 1.0mm.However traditional LED display technique has already appeared bottleneck in high density field.
Because being limited by the traditional structure of LED light source, while material knot involved in the mould group of processing is integrated after being limited by
Structure, for example the driving capacity of traditional constant-current source encapsulation and structure, the loose material bring of traditional FR4PCB plate are integrated into
The thermal instability problem and flatness strength problem of product, and be spliced into required for large screen for installation and be molded mask
With plastic housing etc., LED display technique is all seriously limit in the breakthrough and application in high density field.
Summary of the invention
The purpose of the present invention is in view of the drawbacks of the prior art, provide a kind of epitaxy composite sapphire of LED display module
The manufacturing method and substrate of substrate, manufacturing cost is low, and manufacturing method is simple and easy to do.
In a first aspect, the embodiment of the invention provides a kind of manufactures of the epitaxy composite sapphire substrate of LED display module
Method, which comprises
It is patterned fluting in a side surface of sapphire substrate, forms multiple equidistant grooves；
Slot to be filled is made between (3m-2) a groove and (3m-1) a groove in the multiple groove；M is certainly
So number；
Silicate solder is quantitatively inserted in the slot to be filled, and is heated to melting in high temperature furnace apparatus；
After second melting, feux rouges epitaxy substrate square piece, and the feux rouges epitaxy substrate are implanted into the filling slot
One side surface of square piece and the sapphire substrate is in same plane；
It anneals according to the temperature curve of the silicate solder；
SiO is deposited in the groove2, form separation layer；
One side surface mill and is polished to get the epitaxy composite sapphire substrate is arrived.
Preferably, described before the filling slot is implanted into feux rouges epitaxy substrate square piece, the method also includes:
Prepare the feux rouges epitaxy substrate square piece.
Preferably, described to prepare the feux rouges epitaxy substrate square piece and specifically include:
Feux rouges epitaxy disk is carried out thinned；
Cutting scribing is carried out to the feux rouges epitaxy disk after being thinned, obtains the feux rouges epitaxy substrate square piece.
Preferably, the thickness thinning is 50um.
Preferably, the feux rouges epitaxy substrate square piece has telltale mark；It is described that in the filling slot to be implanted into feux rouges of heap of stone
Brilliant substrate square piece specifically:
According to the telltale mark, contraposition alignment is carried out to the feux rouges epitaxy substrate square piece and the filling slot, and will
The feux rouges epitaxy substrate square piece is implanted into the filling slot.
Preferably, the feux rouges epitaxy substrate square piece is GaAs liner.
Second aspect, the embodiment of the invention provides what a kind of method according to above-mentioned first aspect was prepared to build
Brilliant composite sapphire substrate.
Preferably, the epitaxy composite sapphire substrate is used for LED display module.
The manufacturing method of the epitaxy composite sapphire substrate of LED display module provided in an embodiment of the present invention, manufacturing method
It is simple and easy to do, it is low in cost.
Detailed description of the invention
Fig. 1 is the manufacturing method process of the epitaxy composite sapphire substrate of LED display module provided in an embodiment of the present invention
Figure；
Fig. 2 is one of manufacturing process schematic diagram provided in an embodiment of the present invention；
Fig. 3 is the two of manufacturing process schematic diagram provided in an embodiment of the present invention；
Fig. 4 is the three of manufacturing process schematic diagram provided in an embodiment of the present invention；
Fig. 5 is the four of manufacturing process schematic diagram provided in an embodiment of the present invention；
Fig. 6 is the five of manufacturing process schematic diagram provided in an embodiment of the present invention；
Fig. 7 is the schematic diagram of the epitaxy composite sapphire substrate of LED display module provided in an embodiment of the present invention.
Specific embodiment
Below by drawings and examples, technical scheme of the present invention will be described in further detail.
The manufacturing method and substrate of the epitaxy composite sapphire substrate of LED display module of the invention, are mainly used for 3D
LED display, extra small spacing 3D LED display, ultra high density 3D LED display, 3D LED television, 3D LED video wall,
The substrate manufacture of the display panels in fields such as 3D LED indication, 3D LED special lighting.
Fig. 1 is the manufacturing method process of the 3D LED wafer provided in an embodiment of the present invention for micron LED display module
Figure, Fig. 2-Fig. 6 are preparation process schematic diagram, below such as Fig. 1 and in conjunction with being illustrated shown in Fig. 2-Fig. 7, being related to step includes:
Step 110, it is patterned fluting in a side surface of sapphire substrate 1, forms multiple equidistant grooves 2；
Specifically, first having to carry out surface to sapphire substrate 1 before being patterned fluting to sapphire substrate 1
Pretreatment, smooth surface to be treated is obtained by the process milled, cleaned, dry.
When graphical fluting, groove width can be determine according to actual needs.Spacing phase between multiple grooves 2 after fluting
Deng.It is specific as shown in Figure 2.
Step 120, slot to be filled is made between (3m-2) a groove and (3m-1) a groove in multiple grooves；
Specifically, making slot 3 to be filled between the two of them groove 2 in every adjacent 3 grooves 2.Any two are to be filled
A complete groove 2 is spaced between slot 3.M is natural number in above-mentioned expression formula.
The depth of slot 3 to be filled is greater than the depth of groove 2, and the both ends side wall of slot to be filled 3 is respectively at a groove 2
Centre.It is specific as shown in Figure 3.
Step 130, silicate solder is quantitatively inserted in slot to be filled, and is heated to melting in high temperature furnace apparatus；
Wherein silicate (Soldering Glass, SG) solder 4 is filled in the bottom of slot to be filled, after quantifying to meet
Continuous feux rouges epitaxy substrate square piece is cohered subject to needs.It is specific as shown in Figure 4.
Heating melting process preferably melts twice.
Step 140, after second melting, feux rouges epitaxy substrate square piece, and feux rouges epitaxy substrate are implanted into filling slot
One side surface of square piece and sapphire substrate is in same plane；
Certainly, before filling slot is implanted into feux rouges epitaxy substrate square piece 5, previously prepared feux rouges epitaxy substrate side is needed
Piece.
Feux rouges epitaxy substrate square piece 5 can be thinned to obtain by feux rouges epitaxy disk.Feux rouges epitaxy circle after being thinned
Piece carries out cutting scribing, and preferred thickness thinning is 50um to get feux rouges epitaxy substrate square piece 5 is arrived.Specifically, feux rouges epitaxy serves as a contrast
Bottom square piece 5 is the liner of GaAs material.
The feux rouges epitaxy substrate square piece 5 being prepared has telltale mark.Therefore in implantation, according to telltale mark to red
Light epitaxy substrate square piece 5 and slot to be filled 3 carry out contraposition alignment, and feux rouges epitaxy substrate square piece 5 is implanted into slot 3 to be filled.Such as
Shown in Fig. 5.
Step 150, it anneals according to the temperature curve of silicate solder；
Technique can be specifically carried out in the lehr.
Step 160, SiO is deposited in groove2, form separation layer；
Specifically, as shown in Figure 6.In deposition SiO2After isolated protective layer 6, SiO2It the surface of isolated protective layer 6 can be because heavy
It accumulates technique and protrudes from plane where substrate surface.
Step 170, a side surface mill and be polished to get epitaxy composite sapphire substrate is arrived.
The one side that feux rouges epitaxy substrate square piece 5 is embedded on metacoxal plate is polished in plane specifically, milling.Cleaning, drying,
After test, subsequent preparation LED display module can be ready to use in and used.
Obtained epitaxy composite sapphire substrate is as shown in Figure 7.
The manufacturing method of the epitaxy composite sapphire substrate of LED display module provided in an embodiment of the present invention, manufacturing method
It is simple and easy to do, it is low in cost, it can be used in LED display module, be particularly suitable for high density LED display field, can satisfy height
Density, small pixel spacing for display module substrate demand.
Professional should further appreciate that, described in conjunction with the examples disclosed in the embodiments of the present disclosure
Unit and algorithm steps, can be realized with electronic hardware, computer software, or a combination of the two, hard in order to clearly demonstrate
The interchangeability of part and software generally describes each exemplary composition and step according to function in the above description.
These functions are implemented in hardware or software actually, the specific application and design constraint depending on technical solution.
Professional technician can use different methods to achieve the described function each specific application, but this realization
It should not be considered as beyond the scope of the present invention.
The step of method described in conjunction with the examples disclosed in this document or algorithm, can be executed with hardware, processor
The combination of software module or the two is implemented.Software module can be placed in random access memory (RAM), memory, read-only memory
(ROM), electrically programmable ROM, electrically erasable ROM, register, hard disk, moveable magnetic disc, CD-ROM or technical field
In any other form of storage medium well known to interior.
Above-described specific embodiment has carried out further the purpose of the present invention, technical scheme and beneficial effects
It is described in detail, it should be understood that being not intended to limit the present invention the foregoing is merely a specific embodiment of the invention
Protection scope, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should all include
Within protection scope of the present invention.
Claims (8)
1. a kind of manufacturing method of the epitaxy composite sapphire substrate of LED display module, which is characterized in that the described method includes:
It is patterned fluting in a side surface of sapphire substrate, forms multiple equidistant grooves；
Slot to be filled is made between (3m-2) a groove and (3m-1) a groove in the multiple groove；M is natural number；
Silicate solder is quantitatively inserted in the slot to be filled, and is heated to melting in high temperature furnace apparatus；
After second melting, feux rouges epitaxy substrate square piece, and the feux rouges epitaxy substrate square piece are implanted into the filling slot
Same plane is in a side surface of the sapphire substrate；
It anneals according to the temperature curve of the silicate solder；
SiO is deposited in the groove2, form separation layer；
One side surface mill and is polished to get the epitaxy composite sapphire substrate is arrived.
2. the manufacturing method according to claim 1, which is characterized in that described to be implanted into feux rouges epitaxy lining in the filling slot
Before the square piece of bottom, the method also includes:
Prepare the feux rouges epitaxy substrate square piece.
3. manufacturing method according to claim 2, which is characterized in that described to prepare the feux rouges epitaxy substrate square piece specific
Include:
Feux rouges epitaxy disk is carried out thinned；
Cutting scribing is carried out to the feux rouges epitaxy disk after being thinned, obtains the feux rouges epitaxy substrate square piece.
4. manufacturing method according to claim 3, which is characterized in that the thickness thinning is 50um.
5. the manufacturing method according to claim 1, which is characterized in that the feux rouges epitaxy substrate square piece has positioning mark
Note；It is described to be implanted into feux rouges epitaxy substrate square piece in the filling slot specifically:
According to the telltale mark, contraposition alignment is carried out to the feux rouges epitaxy substrate square piece and the filling slot, and will be described
Feux rouges epitaxy substrate square piece is implanted into the filling slot.
6. the manufacturing method according to claim 1, which is characterized in that the feux rouges epitaxy substrate square piece is GaAs liner.
7. a kind of epitaxy composite sapphire substrate being prepared according to any the method for the claims 1-6.
8. epitaxy composite sapphire substrate according to claim 7, which is characterized in that the epitaxy composite sapphire substrate
For LED display module.
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| CN201611079085.2A CN106784175B (en) | 2016-11-30 | 2016-11-30 | The manufacturing method and substrate of the epitaxy composite sapphire substrate of LED display module |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101728280A (en) * | 2008-10-17 | 2010-06-09 | 探微科技股份有限公司 | Encapsulation structure of light-emitting diode and preparation method thereof |
| CN105449073A (en) * | 2014-09-17 | 2016-03-30 | 阳升应用材料股份有限公司 | Multi-grain substrate-free LED device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200843130A (en) * | 2007-04-17 | 2008-11-01 | Wen Lin | Package structure of a surface-mount high-power light emitting diode chip and method of making the same |
| TWI358110B (en) * | 2007-10-26 | 2012-02-11 | Lite On Technology Corp | Light emitting diode |
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2016
- 2016-11-30 CN CN201611079085.2A patent/CN106784175B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101728280A (en) * | 2008-10-17 | 2010-06-09 | 探微科技股份有限公司 | Encapsulation structure of light-emitting diode and preparation method thereof |
| CN105449073A (en) * | 2014-09-17 | 2016-03-30 | 阳升应用材料股份有限公司 | Multi-grain substrate-free LED device |
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| CN106784175A (en) | 2017-05-31 |
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