CN101728280A - Encapsulation structure of light-emitting diode and preparation method thereof - Google Patents
Encapsulation structure of light-emitting diode and preparation method thereof Download PDFInfo
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- CN101728280A CN101728280A CN200810149930A CN200810149930A CN101728280A CN 101728280 A CN101728280 A CN 101728280A CN 200810149930 A CN200810149930 A CN 200810149930A CN 200810149930 A CN200810149930 A CN 200810149930A CN 101728280 A CN101728280 A CN 101728280A
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- emitting diode
- backlight unit
- diode chip
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- 238000005538 encapsulation Methods 0.000 title abstract description 10
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 60
- 239000000084 colloidal system Substances 0.000 claims abstract description 57
- 238000000034 method Methods 0.000 claims abstract description 46
- 230000008569 process Effects 0.000 claims abstract description 22
- 238000005516 engineering process Methods 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 56
- 239000011248 coating agent Substances 0.000 claims description 35
- 238000000576 coating method Methods 0.000 claims description 35
- 239000013078 crystal Substances 0.000 claims description 16
- 239000012528 membrane Substances 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 5
- 238000012546 transfer Methods 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 2
- 238000009826 distribution Methods 0.000 abstract description 7
- 230000003287 optical effect Effects 0.000 abstract description 6
- 239000000843 powder Substances 0.000 abstract description 3
- 238000010923 batch production Methods 0.000 abstract 1
- 238000007648 laser printing Methods 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000010276 construction Methods 0.000 description 6
- 238000004026 adhesive bonding Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
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- 238000005476 soldering Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
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- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/19—Manufacturing methods of high density interconnect preforms
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- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/24227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect not connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the semiconductor or solid-state body being mounted in a cavity or on a protrusion of the item
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/732—Location after the connecting process
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- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
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- H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
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- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- Engineering & Computer Science (AREA)
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Abstract
The invention discloses an encapsulation structure of a light-emitting diode (LED) and a preparation method thereof. The encapsulation structure of the LED of the invention can use sensitive material to form fluorescent colloid or fluorescent layer so that the semiconductor process can be utilized to perform the batch production of the fluorescent colloid or the fluorescent layer. In addition, the invention can use the light perforating technology or laser printing technology of the exposure and developing technology to accurately and conveniently adjust the distribution density of the fluorescent powder, thus the optical effect of the encapsulation structure of the LED can be accurately adjusted.
Description
Technical field
The present invention relates to a kind of package structure for LED and preparation method thereof, relate in particular to a kind of semiconductor substrate that utilizes as base plate for packaging (package substrate), and can adjust the package structure for LED of the fluorescent material distribution density of fluorescent colloid or fluorescence coating, with and preparation method thereof.
Background technology
Please refer to Fig. 1, what it illustrated is some glue (gluedispensing) process schematic representation of known formation LED encapsulation construction.As shown in Figure 1, known luminescence diode chip package structure 1 comprises the pedestal (base) 2 that utilizes ejection formation to produce, and and lead frame 3 be fixed on the pedestal 2 form base plate for packaging 4,5 of light-emitting diode chip for backlight unit are solid brilliant on lead frame 3.Wherein, the electrode of light-emitting diode chip for backlight unit 5 directly electrically connects with the lead frame 3 that is positioned at base plate for packaging 4 one sides, and another electrode then is electrically connected to the lead frame 3 of base plate for packaging 4 opposite sides by bonding wire 7 in lead-in wire mode (wire bonding).Then carry out one gluing process, utilize spot gluing equipment 8 packaging adhesive material 6 involutions on base plate for packaging 4.
Shortcomings such as yet the method for known formation LED encapsulation construction may have, and the glue amount is inhomogeneous, plastic emitting is unstable, the control of sealing surface flatness is difficult for, process efficiency is low.Especially efficient aspect, because the known point adhesive process once only can be handled a LED encapsulation construction usually, so known method must expend a large amount of time and can finish numerous LED encapsulation construction.
Summary of the invention
One of purpose of the present invention is to provide a kind of package structure for LED and preparation method thereof, to overcome the caused problem of above-mentioned known method.
For reaching above-mentioned purpose, the invention provides a kind of method of making package structure for LED, it includes:
Substrate and a plurality of light-emitting diode chip for backlight unit are provided, and make these light-emitting diode chip for backlight unit solid respectively brilliant on this substrate;
On this substrate and these light-emitting diode chip for backlight unit, form fluorescence coating; And
This fluorescence coating of patterning makes this fluorescence coating become a plurality of fluorescent colloids, and these fluorescent colloids are arranged at these light-emitting diode chip for backlight unit top, makes respectively that this fluorescent colloid has a plurality of light perforation, and respectively this light perforation vertically runs through respectively this fluorescent colloid.
For reaching above-mentioned purpose, the present invention provides a kind of package structure for LED in addition, and it includes:
Substrate;
At least one light-emitting diode chip for backlight unit is fixed on this substrate; And
At least one fluorescent colloid is arranged on this substrate and these light-emitting diode chip for backlight unit, and this fluorescent colloid has a plurality of light perforation, and respectively this light perforation vertically runs through respectively this fluorescent colloid.
But form fluorescent colloid in package structure for LED usability luminescent material of the present invention, therefore can utilize semiconductor technology to carry out batch manufacturing and the patterning step of fluorescent colloid.Because fluorescent colloid of the present invention has a plurality of light perforation, therefore can adjust the fluorescent material distribution density of fluorescent colloid or fluorescence coating effectively, again to promote the optical effect of package structure for LED.
Description of drawings
What Fig. 1 illustrated is the gluing process schematic diagram of known formation LED encapsulation construction.
Fig. 2 a-2b, 3a-3b, 4a-4b, 5a-5c, 6a-6b make the schematic diagram of the method preferred embodiment of package structure for LED for the present invention.
Fig. 7 and Fig. 8 make the method schematic diagram of package structure for LED for another preferred embodiment of the present invention.
Fig. 9 a-9b, 10a-10b, 11a-11b make the schematic diagram of the method for package structure for LED for the another preferred embodiment of the present invention.
Description of reference numerals
1: LED encapsulation construction 2: pedestal
3: lead frame 4: base plate for packaging
5: light-emitting diode chip for backlight unit 6: packaging adhesive material
7: bonding wire 8: spot gluing equipment
30: substrate 32: crystal bonding area
36: through hole 38: lead
40: light-emitting diode chip for backlight unit 46: the photoresists material
48: fluorescent material 50: flat structures
52: contact hole 54: lead
56: fluorescent colloid 57: the light perforation
58: seal ring-like pattern 62: colloid
64: fluorescence coating 66: light-emitting diode chip for backlight unit
70: fluorescence membrane 72: fluorescent material
74: photosensitive dry film 76: fluorescence coating
U: unit
Embodiment
For making the general technical staff of the technical field of the invention can further understand the present invention, hereinafter the spy enumerates a plurality of preferred embodiment of the present invention, and cooperates institute's accompanying drawing, describes constitution content of the present invention and the effect desiring to reach in detail.
Please refer to Fig. 2 a-2b, 3a-3b, 4a-4b, 5a-5c, 6a-6b.Fig. 2 a to Fig. 6 b makes the schematic diagram of the method preferred embodiment of package structure for LED for the present invention, and wherein Fig. 2 a to Fig. 6 a is a schematic top plan view, and Fig. 2 b to Fig. 6 b is a generalized section, and Fig. 5 c is the schematic top plan view of whole base plate 30.Shown in Fig. 2 a and Fig. 2 b, at first provide substrate 30 and a plurality of light-emitting diode chip for backlight unit 40.Wherein, substrate 30 definition have a plurality of unit (unit) U, respectively in order to each light-emitting diode chip for backlight unit 40 to be set.Substrate 30 can be semiconductor substrate, for example is preferably silicon substrate, GaAs substrate or other has excellent heat conductivity, is fit to batch produce and be compatible to the substrate of semiconductor technology.The crystal bonding area 32 that can have a plurality of depressions in the upper surface of substrate 30.The degree of depth of crystal bonding area 32 preferably can be approaching with the height of the light-emitting diode chip for backlight unit of subsequent fixed in it, and its degree of depth be between several microns between the tens of micron, for example be preferably between 10 to 50 microns, but not as limit.Because the degree of depth of crystal bonding area 32 and the height of light-emitting diode chip for backlight unit 40 are approaching, therefore the upper surface in solid brilliant metacoxal plate 30 and light-emitting diode chip for backlight unit 40 can roughly be positioned at same plane.
The present invention can take any suitable electric connection mode to be beneficial to light-emitting diode chip for backlight unit externally to electrically connect, yet because adoptable electric connection mode is numerous, so its detailed connected mode clearly is not illustrated among the figure.For example can utilize the lead-in wire mode to be connected to lead on the substrate 30 (figure does not show), to utilize and cover crystal type and be connected to lead (figure does not show) on the substrate 30, use conducting resinl material, eutectic to engage (eutectic bonding) or alternate manner is reached by soldering projection by bonding wire, and the lead 38 of substrate 30 can be connected to the lower surface of substrate 30 via the through hole 36 of substrate 30, but is not limited thereto.In addition, light-emitting diode chip for backlight unit 40 of the present invention can adopt various types of light-emitting diode chip for backlight unit, for example selects vertical-type chip or horizontal type chip for use.
Shown in Fig. 3 a and Fig. 3 b, then optionally on substrate 30 and light-emitting diode chip for backlight unit 40, form the flat structures 50 of printing opacity.Flat structures 50 has dielectric property and inserts the outside of light-emitting diode chip for backlight unit 40 and the space between the crystal bonding area 32, makes the substrate 30 and the upper surface of light-emitting diode chip for backlight unit 40 form complete tabular surface, helps the making of subsequent film thus.Can comprise a plurality of contacts hole 52 in addition in the flat structures 50,, but be not limited thereto for can outwards being electrically connected of each light-emitting diode chip for backlight unit 40 via contact hole 52.
Shown in Fig. 4 a and Fig. 4 b, thereafter, optionally on flat structures 50, form lead 54 in addition, and lead 54 is inserted contact hole 52, electrically connect thus.Then can utilize spin coating process on substrate 30, light-emitting diode chip for backlight unit 40 and flat structures 50, to form fluorescence coating 64, fluorescence coating 50 includes photoresists material 46 and is mixed in the photoresists material 46 with fluorescent material 48, for example includes the photosensitive material that mixes fluorescent material 48.Be noted that fluorescent material 48 is actually quite small particulate, for the clear distributing position that shows fluorescence coating 50, so fluorescent material 48 is not shown in the vertical view.Wherein, photoresists material 46 can comprise can form behind the photosensitive resin irradiations such as (photosensitive resin) behind link or the irradiation can cracking material, and preferably has good light permeability, and fluorescent material can comprise the material of yttrium aluminium garnet fluorescent powder convertible wavelength of light such as (yttrium aluminum garnet are called for short YAG).
Shown in Fig. 5 a and Fig. 5 b, utilize exposure and the aforementioned fluorescence coating 64 of developing process patterning afterwards, make fluorescence coating 64 become a plurality of fluorescent colloids 56, and can make each fluorescent colloid 56 have a plurality of light perforation 57 simultaneously.Each fluorescent colloid 56 correspondence respectively is arranged at each light-emitting diode chip for backlight unit 40 top.Each light perforation 57 can be uniformly distributed in each fluorescent colloid 56, and can vertically run through each fluorescent colloid 56, with the flat structures 50 of exposure fluorescent colloid 56 belows or the part surface of light-emitting diode chip for backlight unit 40.Because the part of light perforation 57 is not had fluorescent material 48, so the existence of light perforation 57 can reduce this regional fluorescent material 48 quantity, uses to change the colour temperature that package structure for LED presented.Wherein the light of each fluorescent colloid 56 57 shared areas of boring a hole can be adjusted according to designs such as the brightness of each light-emitting diode chip for backlight unit 40 and product demands, are preferably 5% to 30% of the area that accounts for each fluorescent colloid 56.
The effect of fluorescent colloid 56 is that the part light that light-emitting diode chip for backlight unit 40 is produced converts the light of another color to, for example the light-emitting diode chip for backlight unit 40 of present embodiment can be blue LED chip, therefore fluorescent colloid 56 can use the fluorescent material (yellow phosphor) that can produce gold-tinted, and then produces white light by blue light and gold-tinted mixed light.Perhaps, utilize the ultraviolet light-emitting diodes chip to excite blue light, green glow and red light fluorescent powder.Be noted that the material and the generation type of fluorescent colloid 56 are not exceeded with present embodiment.
Be noted that the shape of the light perforation 57 of each fluorescent colloid 56, size, the shared gross area, the density and the position of distribution all can be adjusted according to the distribution density and the product demand of fluorescent material 48.Encapsulating structure with blue light-emitting diode is an example; for utilizing the formed fluorescence coating 64 of spin coating process; not having light when fluorescent colloid 56 bores a hole 57 the time; gold-tinted fluorescent material 48 density that are positioned at the middle section of substrate 30 can be come highly than gold-tinted fluorescent material 48 density of the fringe region that is positioned at substrate 30 usually; therefore the gold-tinted tone that package structure for LED presented that is positioned at the middle section of substrate 30 may be stronger than the gold-tinted tone that package structure for LED presented of the fringe region that is positioned at substrate 30, causes same series-produced package structure for LED but to send in various degree colour temperature.Therefore, the present invention can be after forming fluorescence coating 64, measure the colour temperature or the brightness that are presented on arbitrary substrate 30, then compare the similarities and differences between measurement and the required product specification that presents, utilize the result who compares to design the layout of light perforation 57 again, utilize being provided with of light perforation 57 to regulate.Shown in Fig. 5 c, for example make the light of middle section of the substrate 30 57 opening ratios of boring a hole to come highly than the light 57 opening ratios of boring a hole of the fringe region of substrate 30.Perhaps; when the surface that substrate 30, light-emitting diode chip for backlight unit 40 and flat structures 50 are constituted has recess; fluorescent material 48 density of recess usually can be higher than smooth place or prominence; therefore the present invention can be provided with the light perforation 57 of higher opening ratio in recess, with as balance.
In addition, the present invention can form the ring-like pattern 58 of a plurality of sealings on flat structures 50, respectively around each crystal bonding area 32.Seal ring-like pattern 58 and have certain height, for example several microns, its role is to keep the surface tension of the colloid of follow-up formation, make it keep the effect of hemisphere shape and then performance optical lens.In the present embodiment, seal ring-like pattern 58 and can use identical photosensitive material, and used simplification technology, but method of the present invention is not as limit by forming with exposure and developing process with fluorescent colloid 56.
Shown in Fig. 6 a and Fig. 6 b, then carry out gluing process, on the fluorescent colloid 56 of each unit U, form colloid 62 respectively, and colloid 62 can be kept its surface tension by the existence of sealing ring-like pattern 58, formation hemisphere shape.Colloid 62 can form optical lens (lens) after curing, utilize cutting technique can produce a plurality of package structure for LED at last again.
In previous embodiment, fluorescence coating 64 rotary coating are on the surface of flat structures 50, because the flat characteristic of flat structures 50 makes photoresists material 46 and fluorescent material 48 can successfully utilize spin coating process to form uniform fluorescence coating 64.In other embodiment, the present invention also can not comprise flat structures 50, and makes photoresists material 46 and fluorescent material 48 can be spun on smooth surface by alternate manner.Please refer to Fig. 7 and Fig. 8.Fig. 7 and Fig. 8 are the method schematic diagram of another preferred embodiment making package structure for LED of the present invention, and wherein Fig. 7 is a schematic top plan view, and Fig. 8 is a generalized section.As Fig. 7 and shown in Figure 8, make light-emitting diode chip for backlight unit 66 be placed in crystal bonding area 32 after, light-emitting diode chip for backlight unit 66 end faces are rough identical with substrate 30 apical side heights, utilize spin coating process and Patternized technique again and form the fluorescent colloid 56 with light perforation 57.Wherein, light-emitting diode chip for backlight unit 66 can adopt variety of way to form the approach of external electrical connection, and package structure for LED can comprise other element or the retes that can promote production reliability or optics benefit in addition, yet its detailed electrical connection state, other elements or rete are not illustrated among the figure in this omission.
Because but package structure for LED usability luminescent material of the present invention forms fluorescent colloid, therefore can utilize semiconductor technology to carry out batch manufacturing and the patterning step of fluorescent colloid, significantly shorten the process time of package structure for LED, make process efficiency heighten.Again because the present invention can utilize the patterning step of fluorescent colloid to form the light perforation in the lump, therefore can be accurately and adjust the fluorescent material distribution density of fluorescent colloid easily, to promote the optical effect of package structure for LED, controlled the package structure for LED of being produced and can be sent identical or close colour temperature, perhaps also can be especially at the package structure for LED of same batch of production and adjust in various degree colour temperature.
Except can utilizing spin coating process and Patternized technique to come batch to make the uniform fluorescence coating, the present invention also can utilize mode that laser prints and batch produce uniform fluorescence coating.Please refer to Fig. 9 a-9b, 10a-10b, 11a-11b.Fig. 9 a to Figure 11 b makes the schematic diagram of the method for package structure for LED for the another preferred embodiment of the present invention, and wherein Fig. 9 a to Figure 11 a is the schematic top plan view of fluorescence membrane, and Fig. 9 b to Figure 11 b figure is the generalized section of fluorescence membrane.Shown in Fig. 9 a and Fig. 9 b, at first provide substrate 30 and a plurality of light-emitting diode chip for backlight unit 40.Wherein, substrate 30 definition have a plurality of unit U, respectively in order to each light-emitting diode chip for backlight unit 40 to be set.The crystal bonding area 32 that can have a plurality of depressions in the upper surface of substrate 30.The degree of depth of crystal bonding area 32 preferably can be approaching with the height of the light-emitting diode chip for backlight unit of subsequent fixed in it, but be not limited thereto.The flat structures 50 that on substrate 30 and light-emitting diode chip for backlight unit 40, optionally comprises printing opacity.Flat structures 50 has dielectric property and inserts the outside of light-emitting diode chip for backlight unit 40 and the space between the crystal bonding area 32, makes the substrate 30 and the upper surface of light-emitting diode chip for backlight unit 40 form complete tabular surface., in addition optionally in flat structures 50 on form lead 54, and lead 54 is inserted contact hole 52, electrically connect thus thereafter.
Shown in Figure 10 a and Figure 10 b, then utilize at least one laser technology of prining to form fluorescence membrane 70, wherein fluorescence membrane 70 includes fluorescent material 72.For instance, the generation type of fluorescence membrane 70 can utilize main charging rotating shaft that static is projected on photosensitive drums or the sensitization band earlier, again according to the predetermined pattern of required formation and with Electrostatic Absorption fluorescent material 72, then the fluorescent material 72 that presents predetermined pattern is transferred on the photosensitive dry film 74, to form required fluorescence membrane 70.
Because the laser characteristic of prining, analysing and observe sight, the fluorescent material 72 of single fluorescence membrane 70 is monolayer alignment vertical stacking not; To overlook sight, the print resolution of technology of laser can reach about 50 microns, even littler, therefore can control the arranged evenly of fluorescent material 72 and forms any predetermined pattern, and not limited to by Figure 10 b, and then also can control fluorescent material 72 density of arbitrary region.For instance, fluorescent material 72 can be evenly distributed on the whole fluorescence membrane 70, or only on the crystal bonding area 32 corresponding to substrate 30.And in other embodiment; with regard to single package structure for LED; luminous intensity directly over the light-emitting diode chip for backlight unit 40 usually can be bigger than the luminous intensity around the light-emitting diode chip for backlight unit 40; therefore fluorescence membrane 70 can be bigger corresponding to 72 density of the fluorescent material directly over the light-emitting diode chip for backlight unit 40, and can be smaller corresponding to fluorescent material 72 density around the light-emitting diode chip for backlight unit 40.
Shown in Figure 11 a and Figure 11 b, utilize heat pressing process that the fluorescent material 72 of fluorescence membrane 70 is transferred on the light-emitting diode chip for backlight unit 40 thereafter and form fluorescence coating 76.In view of the above, the fluorescent material 72 of single fluorescence coating 76 also can be monolayer alignment and vertical stacking not, and fluorescent material 72 density of arbitrary region also can obtain accurate control on the light-emitting diode chip for backlight unit 40.
In other embodiment of the present invention, print technology and aforementioned transfer step of aforementioned laser can be carried out repeatedly, to form multilayer fluorescence coating 76 on light-emitting diode chip for backlight unit 40.The laser technology of prining helps small fluorescent material 72 configurations on the adjacent or lap position of accurately configuration, arranges by atomic thin pattern and density and makes up utilization, can create the colour temperature that naked eyes seem suitable homogeneous.
In sum, because but package structure for LED usability luminescent material of the present invention forms fluorescent colloid or fluorescence coating, therefore can utilize semiconductor technology to carry out batch manufacturing of fluorescent colloid or fluorescence coating, effectively promote the process efficiency of package structure for LED.In addition, because the present invention can utilize exposure and developing process or the laser technology of prining accurately and easily to adjust the fluorescent material distribution density of fluorescent colloid or fluorescence coating, therefore can adjust the optical effect of package structure for LED exactly.
The above only is the preferred embodiments of the present invention, and all equivalent variations and modifications of doing according to claim of the present invention all should belong to covering scope of the present invention.
Claims (20)
1. method of making package structure for LED, it includes:
Substrate and a plurality of light-emitting diode chip for backlight unit are provided, and described light-emitting diode chip for backlight unit is solid respectively brilliant on this substrate;
On this substrate and described light-emitting diode chip for backlight unit, form fluorescence coating; And
This fluorescence coating of patterning makes this fluorescence coating become a plurality of fluorescent colloids and lays respectively at described light-emitting diode chip for backlight unit top, and makes respectively that this fluorescent colloid has a plurality of light perforation, and respectively this light perforation vertically runs through respectively this fluorescent colloid.
2. the method for claim 1, wherein this fluorescence coating includes the photoresists material, is mixed in this photoresists material with fluorescent material.
3. the method for claim 1, wherein this fluorescence coating is to utilize spin coating process to form.
4. the method for claim 1, wherein the step of this fluorescence coating of patterning is carried out for utilizing exposure and developing process.
5. the method for claim 1, wherein respectively the shared area of described light perforation of this fluorescent colloid be respectively this fluorescent colloid area 5% to 30%.
6. the method for claim 1, wherein this substrate comprises semiconductor substrate.
7. the method for claim 1, wherein the upper surface of this substrate comprises the crystal bonding area of a plurality of depressions, and described light-emitting diode chip for backlight unit is arranged in the described crystal bonding area.
8. the method for claim 1, wherein before forming this fluorescence coating, other comprises the step that flat structures is provided, and this flat structures is covered in this substrate and described light-emitting diode chip for backlight unit surface.
9. method as claimed in claim 8, wherein this fluorescence coating is formed on the surface of this flat structures.
10. the method for claim 1, wherein said light perforation are uniformly distributed in respectively in this fluorescent colloid, and the described light perforation of part exposes described light-emitting diode chip for backlight unit.
11. a package structure for LED, it includes:
Substrate;
At least one light-emitting diode chip for backlight unit is fixed on this substrate; And
At least one fluorescent colloid is arranged on this substrate and this light-emitting diode chip for backlight unit, and this fluorescent colloid has a plurality of light perforation, and respectively this light perforation vertically runs through respectively this fluorescent colloid.
12. package structure for LED as claimed in claim 11, wherein this fluorescent colloid includes the photoresists material, is mixed in this photoresists material with fluorescent material.
13. package structure for LED as claimed in claim 11, wherein respectively the shared area of the described light of this fluorescent colloid perforation be respectively this fluorescent colloid area 5% to 30%.
14. package structure for LED as claimed in claim 11, wherein this substrate comprises semiconductor substrate.
15. package structure for LED as claimed in claim 11, wherein the upper surface of this substrate comprises the crystal bonding area of at least one depression, and this light-emitting diode chip for backlight unit is arranged in this crystal bonding area.
16. package structure for LED as claimed in claim 11, other comprises flat structures, and this flat structures is covered in this substrate and described light-emitting diode chip for backlight unit surface, and this fluorescent colloid is formed on the surface of this flat structures.
17. package structure for LED as claimed in claim 11, the perforation of wherein said light are uniformly distributed in respectively in this fluorescent colloid, and the described light perforation of part exposes described light-emitting diode chip for backlight unit.
18. a method of making package structure for LED, it includes:
Substrate and a plurality of light-emitting diode chip for backlight unit are provided, and described light-emitting diode chip for backlight unit is solid respectively brilliant on this substrate;
Carry out at least one laser technology of prining, to form at least one fluorescence membrane, this fluorescence membrane includes fluorescent material; And
The fluorescent material of this fluorescence membrane is transferred on the described light-emitting diode chip for backlight unit and forms at least one fluorescence coating.
19. method as claimed in claim 18, wherein this transfer step utilizes heat pressing process that described fluorescent material is transferred on the described light-emitting diode chip for backlight unit.
20. method as claimed in claim 18, wherein print technology and this transfer step of this laser can be carried out repeatedly, to form the multilayer fluorescence coating on described light-emitting diode chip for backlight unit.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102157668A (en) * | 2011-04-01 | 2011-08-17 | 饶曼夫 | Fluorescent powder packaging structure of light-emitting diode and packaging method thereof |
| CN102368520A (en) * | 2011-10-27 | 2012-03-07 | 华灿光电股份有限公司 | Reverse pyramid structure LED chip preparation method |
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| EP2080235B1 (en) * | 2006-10-12 | 2013-12-04 | Panasonic Corporation | Light-emitting device |
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| CN102374496A (en) * | 2010-08-18 | 2012-03-14 | 晶元光电股份有限公司 | Multidimensional lighting device |
| CN102374496B (en) * | 2010-08-18 | 2015-03-25 | 晶元光电股份有限公司 | Multidimensional lighting device |
| CN102157668A (en) * | 2011-04-01 | 2011-08-17 | 饶曼夫 | Fluorescent powder packaging structure of light-emitting diode and packaging method thereof |
| CN102368520A (en) * | 2011-10-27 | 2012-03-07 | 华灿光电股份有限公司 | Reverse pyramid structure LED chip preparation method |
| CN107403791A (en) * | 2016-05-18 | 2017-11-28 | 光宝光电(常州)有限公司 | Active display and the method for forming active display |
| CN107403791B (en) * | 2016-05-18 | 2020-04-10 | 光宝光电(常州)有限公司 | Light emitting display and method of forming a light emitting display |
| CN106601725A (en) * | 2016-11-30 | 2017-04-26 | 环视先进数字显示无锡有限公司 | Composite sapphire substrate epitaxial LED display module manufacturing method |
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| CN106784175B (en) * | 2016-11-30 | 2018-12-21 | 环视先进数字显示无锡有限公司 | The manufacturing method and substrate of the epitaxy composite sapphire substrate of LED display module |
| CN106601725B (en) * | 2016-11-30 | 2019-04-05 | 环视先进数字显示无锡有限公司 | The manufacturing method of composite sapphire substrate epitaxy LED display module |
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