CN106784051A - Carry high-power IBC batteries interconnection architecture - Google Patents
Carry high-power IBC batteries interconnection architecture Download PDFInfo
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- CN106784051A CN106784051A CN201710046890.3A CN201710046890A CN106784051A CN 106784051 A CN106784051 A CN 106784051A CN 201710046890 A CN201710046890 A CN 201710046890A CN 106784051 A CN106784051 A CN 106784051A
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- 238000000926 separation method Methods 0.000 claims abstract description 19
- 238000005192 partition Methods 0.000 claims abstract description 14
- 239000004568 cement Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Connection Of Batteries Or Terminals (AREA)
Abstract
The present invention provides one kind and carries high-power IBC batteries interconnection architecture, including IBC batteries, the interconnection of IBC batteries uses vertical separation structure or parallel separation structure, and IBC batteries are 25 independent cell pieces by even partition, and adjacent cell piece connects opposite polarity electrode by conducting connecting part；This kind improves power IBC battery interconnection architectures, it is possible to increase the power of component at least 2% 3%.The present invention reduces the power loss caused because electric current is larger by dividing the cell into half or multi-disc, the series resistance of battery is reduced also by the redesign of battery main gate line, process complexity when main grid prints is reduced, so as to improve the power of component to greatest extent.
Description
Technical field
High-power IBC batteries interconnection architecture is carried the present invention relates to one kind.
Background technology
IBC（Interdigitated back contact refer to intersection back contacts）Battery, refers to electrodeless battery front side,
Positive and negative polarities metal grid lines are in finger-like cross arrangement in cell backside.The characteristics of IBC batteries are maximum is that PN junction and metal are contacted all
The back side in battery, front does not have the influence that metal electrode is blocked, therefore with short circuit current Jsc higher, while the back side
Metal grid lines wider can be allowed to reduce series resistance Rs so as to improve fill factor, curve factor FF；Plus battery front-surface field
（Front Surface Field, FSF）And the open loop voltage gain that well passivated zone of action is come so that this front is without screening
The battery of gear not only high conversion efficiency, and look more attractive, meanwhile, the component of all back-contact electrodes is easier to assembling.IBC batteries
It is to realize one of technique direction of high-efficiency crystal silicon cell at present.
The component package of current IBC batteries is by the way of conductive backings or welding welding, and conductive backings are relatively costly,
On small area battery, the main grid of both positive and negative polarity is located at the two ends of battery, in that context it may be convenient to realize welding or edge interconnection, but
The increase of series resistance can be caused for the design of this main grid of area battery and lose efficiency.Simultaneously because IBC battery sheets
The electric current of body is higher, can cause the increase of the resistance loss of component.
The content of the invention
High-power IBC batteries interconnection architecture is carried it is an object of the invention to provide one kind to solve on present in prior art
State problem.
Technical solution of the invention is：
One kind improves power IBC battery interconnection architectures, including IBC batteries, and IBC batteries use vertical separation structure or parallel separation
Structure, IBC batteries are 2-5 independent cell piece by even partition, and each cell piece is provided with positive pole main gate line, negative pole main grid
Line, just superfine grid line and the thin grid line of negative pole, positive pole main gate line and negative pole main gate line be arranged in parallel to form main gate line pair, thin grid line with
Main gate line is vertically arranged, and just superfine grid line, the thin grid line of negative pole is parallel is arranged alternately, just superfine grid line and polarity identical positive pole master
Grid line connection, just superfine grid line and opposite polarity negative pole main gate line mutually insulated, the thin grid line of negative pole and polarity identical negative pole
Main gate line connection, the thin grid line of negative pole and opposite polarity positive pole main gate line mutually insulated, adjacent cell piece is by conducting connecting part
Connect opposite polarity electrode.
Further, vertical separation structure be IBC batteries with main gate line on vertical direction by even partition be 2-5
Individual independent cell piece, adjacent cell piece Central Symmetry is set, and conducting connecting part is using conductive tape or the copper of plating In or Sn
Band, the main gate line of adjacent cell piece is parallel to each other to holding, and opposite polarity positive pole main gate line, negative pole main gate line are located at together
On one straight line.
Further, insulating cement, the thin grid line of negative pole and pole are provided between just superfine grid line and opposite polarity negative pole main gate line
Insulating cement is provided between the opposite positive pole main gate line of property.
Further, the spacing of adjacent cell piece is 0.5mm-3mm.
Further, parallel separation structure be IBC batteries with main gate line on parallel direction by even partition be 2-5
Individual independent cell piece, each cell piece is equipped with one group of opposite polarity positive pole main gate line and negative pole main gate line, positive pole main grid
Line and negative pole main gate line set up separately at the two ends of cell piece.
Further, gap, the thin grid line of negative pole and polarity are provided between just superfine grid line and opposite polarity negative pole main gate line
Gap is provided between opposite positive pole main gate line.
Further, the spacing of adjacent cell piece is 0.2mm-3mm.
Further, conducting connecting part is using using metallic plate or conductive tape.
Further, conducting connecting part surface scribbles reflective medium layer.
Further, the quantity of cell piece is identical with the number of main gate line in parallel separation structure.
The beneficial effects of the invention are as follows：This kind of high power IBC battery interconnection architecture, it is possible to increase the power of component is at least
2%-3%.The present invention reduces the power loss caused because electric current is larger by dividing the cell into half or multi-disc, also by
The redesign of battery main gate line reduces the series resistance of battery, reduces process complexity when main grid prints, so that maximum
The power of the raising component of limit.
Brief description of the drawings
Fig. 1 is the schematic diagram of the main gate line design of conventional large area IBC batteries；
Fig. 2 is that the IBC batteries of embodiment one are 2 cell pieces by even partition, and using the schematic diagram of vertical separation structure；
Fig. 3 is that the IBC batteries of embodiment two are 3 cell pieces by even partition, and using the schematic diagram of vertical separation structure；
Fig. 4 is that the IBC batteries of embodiment three are 3 cell pieces by even partition, and using the schematic diagram of parallel separation structure；
Fig. 5 is that example IV IBC batteries are 5 cell pieces by even partition, and using the schematic diagram of parallel separation structure；
Wherein：The just superfine grid lines of 1-, the thin grid line of 2- negative poles, 3- positive pole main gate lines, 4- negative pole main gate lines, 5- insulating cements, 6- is conductive
Connector.
Specific embodiment
The preferred embodiment that the invention will now be described in detail with reference to the accompanying drawings.
One kind improves power IBC battery interconnection architectures, including IBC batteries, and IBC batteries use vertical separation structure or parallel
Separation structure, IBC batteries are 2-5 independent cell piece by even partition, and each cell piece is provided with positive pole main gate line 3, negative pole
Main gate line 4, just superfine grid line 1 and the thin grid line 2 of negative pole, positive pole main gate line 3 and negative pole main gate line 4 be arranged in parallel to form main gate line
Right, just superfine grid line 1 is vertically arranged with positive pole main gate line 3, and the thin grid line 2 of negative pole is vertically arranged with negative pole main gate line 4, just superfine grid
The thin grid line 2 of line 1, negative pole is parallel to be arranged alternately, and just superfine grid line 1 and polarity identical positive pole main gate line 3 are connected, just superfine grid line
1 and the opposite polarity mutually insulated of negative pole main gate line 4, the thin grid line 2 of negative pole and polarity identical negative pole main gate line 4 are connected, negative pole
Thin grid line 2 and the opposite polarity mutually insulated of positive pole main gate line 3, adjacent cell piece connect opposite polarity by conducting connecting part 6
Electrode.
Vertical separation structure be IBC batteries with main gate line to by even partition being that 2-5 is independent on vertical direction
Cell piece, adjacent cell piece Central Symmetry is set, and conducting connecting part 6 is adjacent using conductive tape or the copper strips of plating In or Sn
The main gate line of cell piece is parallel to each other to holding, and opposite polarity positive pole main gate line 3, negative pole main gate line 4 are located at always
On line.It is provided with insulating cement 5 between just superfine grid line 1 and opposite polarity negative pole main gate line 4, the thin grid line 2 of negative pole and opposite polarity
Insulating cement 5 is provided between positive pole main gate line 3.
Parallel separation structure be IBC batteries with main gate line to by even partition being that 2-5 is independent on parallel direction
Cell piece, each cell piece is equipped with one group of opposite polarity positive pole main gate line 3 and negative pole main gate line 4, positive pole main gate line 3 and negative
Pole main gate line 4 sets up separately at the two ends of cell piece.Gap, negative pole are provided between just superfine grid line 1 and opposite polarity negative pole main gate line 4
Carefully gap is provided between grid line 2 and opposite polarity positive pole main gate line 3.
This kind of high power IBC battery interconnection architecture, it is possible to increase the power of the component at least power of 2%-3%.The present invention is logical
Cross and divide the cell into half or multi-disc and reduce the power loss caused because electric current is larger, also by the weight of battery main gate line
It is new to design to reduce the series resistance of battery, process complexity when main grid prints is reduced, so as to improve component to greatest extent
Power.The interconnection of cell piece can also can be interconnected using conductive tape interconnection using conductive copper plate.
Embodiment one
Such as Fig. 2, the main gate line of IBC batteries to being equally distributed in metallization area, positive pole main gate line 3 and negative pole main gate line 4
Between spacing be 4mm, insulated using insulating cement 5 between opposite polarity main gate line and secondary grid line.Silk-screen printing is sintered
The many main grid batteries of large area afterwards are being divided into 1/2 using laser perpendicular to main grid direction, obtain two cell pieces, will wherein
A cell piece turn 180o, be attached for the both positive and negative polarity main grid in vertical direction of adjacent cell piece using welding by C.
Embodiment two
Embodiment two is essentially identical with the structure of embodiment one, and embodiment two is with the difference of embodiment one：By silk screen
The many main grid batteries of large area after printing-sintering are being divided into 1/3 using laser perpendicular to main grid direction, and such as Fig. 3 obtains three
Individual cell piece, 180 are turned by the cell piece at middle partoC。
Embodiment three
Such as Fig. 4, IBC batteries are respectively arranged at two ends with positive pole main gate line 3, negative pole main gate line 4, opposite polarity main gate line and thin grid
There is 0.5mm between line to be spaced in battery preparation, emitter stage and back surface field area are terminated in each 1/3 battery, adjacent electricity
The emitter stage in pond and back surface field area are simultaneously not attached to.Spacing is 1mm between adjacent both positive and negative polarity main grid.After silk-screen printing sintering, edge
The direction parallel to main grid, the adjacent main grid of inside battery is carried out using laser to be divided into 3 pieces of batteries, by phase after segmentation
The main grid of adjacent battery is welded using conductive copper plate, and its spacing is 1.5mm.
Example IV
Such as Fig. 5, IBC batteries are respectively arranged at two ends with positive pole main gate line 3, negative pole main gate line 4, opposite polarity main gate line and thin grid
There is 0.5mm between line to be spaced in battery preparation, emitter stage and back surface field area are terminated in each 1/5 battery, adjacent electricity
The emitter stage in pond and back surface field area are simultaneously not attached to.Spacing is 1mm between adjacent both positive and negative polarity main grid.After silk-screen printing sintering, edge
The direction parallel to main grid, the adjacent main grid of inside battery is carried out using laser to be divided into 5 pieces of batteries, by phase after segmentation
The main grid of adjacent battery is welded using conductive copper plate, and its spacing is 1mm.
Embodiment principle is as follows：
Power loss for component derives from P=I2Rs, after the design using half battery or 1/3 or 1/5 battery, electricity
The loss that stream brings is original 1/4 or 1/25, simultaneously because the transmission range of electric current shorten to original 1/3 or 1/
5, series resistance is significantly reduced, so power loss reduction, component power increase.
Claims (10)
- It is 1. a kind of to improve power IBC battery interconnection architectures, it is characterised in that：Including IBC batteries, IBC batteries use vertical separation Structure or parallel separation structure, IBC batteries are 2-5 independent cell piece by even partition, and each cell piece is provided with positive pole master Grid line, negative pole main gate line, just superfine grid line and the thin grid line of negative pole, positive pole main gate line and negative pole main gate line be arranged in parallel to form main grid Line pair, thin grid line is vertically arranged with main gate line, and just superfine grid line, the thin grid line of negative pole is parallel is arranged alternately, just superfine grid line and pole Property the connection of identical positive pole main gate line, just superfine grid line and opposite polarity negative pole main gate line mutually insulated, the thin grid line of negative pole and The connection of polarity identical negative pole main gate line, the thin grid line of negative pole and opposite polarity positive pole main gate line mutually insulated, adjacent battery Piece connects opposite polarity electrode by conducting connecting part.
- 2. high-power IBC batteries interconnection architecture is carried as claimed in claim 1, it is characterised in that：Vertical separation structure is IBC Battery with main gate line to by even partition being the independent cell pieces of 2-5, adjacent cell piece Central Symmetry on vertical direction Set, using conductive tape or plating In or Sn copper strips, the main gate line of adjacent cell piece is to keeping mutually flat for conducting connecting part OK, and opposite polarity positive pole main gate line, negative pole main gate line are located along the same line.
- It is 3. as claimed in claim 2 to improve power IBC battery interconnection architectures, it is characterised in that：Just superfine grid line and polarity phase Insulating cement is provided between anti-negative pole main gate line, insulating cement is provided between the thin grid line of negative pole and opposite polarity positive pole main gate line.
- 4. power IBC battery interconnection architectures are improved as claimed in claim 2, it is characterised in that：The spacing of adjacent cell piece is 0.5mm-3mm。
- It is 5. as claimed in claim 1 to improve power IBC battery interconnection architectures, it is characterised in that：Parallel separation structure is IBC electricity Pond is, to by even partition being the independent cell pieces of 2-5 on parallel direction, each cell piece is equipped with one group with main gate line Opposite polarity positive pole main gate line and negative pole main gate line, positive pole main gate line and negative pole main gate line set up separately at the two ends of cell piece.
- It is 6. as claimed in claim 5 to improve power IBC battery interconnection architectures, it is characterised in that：Just superfine grid line and polarity phase Gap is provided between anti-negative pole main gate line, gap is provided between the thin grid line of negative pole and opposite polarity positive pole main gate line.
- It is 7. as claimed in claim 6 to improve power IBC battery interconnection architectures, it is characterised in that：The spacing of adjacent cell piece is 0.2mm-3mm。
- It is 8. as claimed in claim 5 to improve power IBC battery interconnection architectures, it is characterised in that：Conducting connecting part is using use Metallic plate or conductive tape.
- 9. raising power IBC battery interconnection architectures as described in claim any one of 1-8, it is characterised in that：Conducting connecting part Surface scribbles reflective medium layer.
- 10. raising power IBC battery interconnection architectures as described in claim any one of 5-8, it is characterised in that：The number of cell piece Amount is identical with the number of main gate line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710046890.3A CN106784051A (en) | 2017-01-22 | 2017-01-22 | Carry high-power IBC batteries interconnection architecture |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710046890.3A CN106784051A (en) | 2017-01-22 | 2017-01-22 | Carry high-power IBC batteries interconnection architecture |
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| CN201710046890.3A Pending CN106784051A (en) | 2017-01-22 | 2017-01-22 | Carry high-power IBC batteries interconnection architecture |
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| CN108269873A (en) * | 2017-12-30 | 2018-07-10 | 英利能源（中国）有限公司 | IBC solar cells and preparation method thereof |
| JP2019036733A (en) * | 2017-08-21 | 2019-03-07 | エルジー エレクトロニクス インコーポレイティド | Solar cell panel |
| CN114864706A (en) * | 2022-05-12 | 2022-08-05 | 常州时创能源股份有限公司 | Preparation method of IBC battery pack |
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| CN114864706B (en) * | 2022-05-12 | 2024-02-13 | 常州时创能源股份有限公司 | Preparation method of IBC battery assembly |
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