CN106783934A - Film forming method and oled panel forming method - Google Patents
Film forming method and oled panel forming method Download PDFInfo
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- CN106783934A CN106783934A CN201710011001.XA CN201710011001A CN106783934A CN 106783934 A CN106783934 A CN 106783934A CN 201710011001 A CN201710011001 A CN 201710011001A CN 106783934 A CN106783934 A CN 106783934A
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- film
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- forming method
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
Abstract
The invention provides a kind of film forming method and oled panel forming method.Above-mentioned film forming method includes：Step one：One substrate is put into a chamber, the chamber rises to a predetermined temperature, and film is formed on the substrate；Step 2：Reduce the temperature of the substrate；Repeat the above steps until forming the film of predetermined thickness on the substrate.The present invention can reduce the stress of film, and then reduce warpage or the deformation of substrate.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of film forming method and oled panel forming method.
Background technology
Organic Light Emitting Diode (OLED) is because its energy consumption is low, high resolution, brightness is high, luminous efficiency is high, fast response time,
Visual angle is wide, be not required to backlight, low cost, the low plurality of advantages of driving voltage, has in the field such as FPD and light source extensive
Research, application prospect.
Allow the display development trend of the screen of following various intelligent uses can be had become with free bend.With it is traditional
Rigid display is compared, and flexible display has many advantages, such as, for example impact resistance, and shock resistance is strong, and lightweight, small volume is taken
Band is more convenient etc..Using materials such as plastics, polyester film or films as substrate, oled panel can accomplish thinner, or even
Can be folded or rolled up, be capable of achieving flexible soft screen and show and flexible light source.
By forming various film layers on flexible substrates and then realizing display function, practice finds flexible display, when logical
Sputtering technology is crossed after formation second metal layer on substrate, substrate warp increases suddenly, and it is different that appearance absorption is abnormal, manipulator takes piece
The situation such as normal, causes subsequent technique to be normally carried out.
The content of the invention
It is existing to solve it is an object of the invention to provide a kind of film forming method and oled panel forming method
Substrate warp or the problem of deformation.
In order to solve the above technical problems, the present invention provides a kind of film forming method, including：
Step one：One substrate is put into a chamber, the chamber rises to a predetermined temperature, forms thin on the substrate
Film；
Step 2：Reduce the temperature of the substrate；
Repeat the above steps until forming the film of predetermined thickness on the substrate.
Optionally, in described film forming method, the film is metallic film.Further, the film is
Aluminium film or Copper thin film.
Optionally, in described film forming method, the forming method of the film is sputtering or evaporation.
Optionally, in described film forming method, the number of times for performing the step one is 2~4 times, performs the step
Rapid two number of times is 1~3 time.
Optionally, in described film forming method, the thickness of the film is more than 5000 angstroms, and the step one is each
The film thickness formed on substrate is 1000~3000 angstroms.
Optionally, in described film forming method, in the step 2, the substrate is removed into the chamber,
And a scheduled time in room temperature environment is positioned over, to reduce the temperature of the substrate.
Optionally, in described film forming method, in the step 2, the substrate indwelling is in the chamber
In, and the temperature of the chamber is reduced, to reduce the temperature of the substrate.
Another side of the invention, also provides a kind of oled panel forming method, including：
One substrate is provided；
Form the film of predetermined thickness on the substrate using the method described in as above any one.
Optionally, in described oled panel forming method, before the film of predetermined thickness is formed on the substrate,
Active layer, gate insulation layer, the first metal layer and interlayer insulating film are sequentially formed on the substrate.
Compared with prior art, after the present invention forms certain thickness film on substrate, the temperature of substrate is lowered,
Then the deposition film again on substrate, repeatedly until the film of substrate reaches predetermined thickness, so, it is possible to reduce film
Stress, and then reduce substrate warpage or deformation.
Brief description of the drawings
Fig. 1 is the schematic diagram of film forming method in one embodiment of the invention；
Fig. 2 is membrane formation times and stress and the graph of a relation of substrate warp degree.
Specific embodiment
In the introduction it has been already mentioned that after forming second metal layer on substrate, substrate warp increases suddenly.Through application
People's research finds, because the thickness of second metal layer is larger (usually thousands of angstroms), and it is disposable by techniques such as sputterings
Formed, cause second metal layer to produce larger stress so that warpage or deformation occurs in substrate.Applicant further studies hair
Existing, membrane stress originates from certain structural imperfection (such as impurity, room, grain boundary, dislocation in thin film growth process
Deng), lattice misfit between the presence of surface energy state and film and basal body interface etc., and film stress with the increase of thickness
And increase, if by the way of multiple film forming, the less film of thickness is only formed every time, after reducing the temperature of substrate, again
Film is formed on substrate, it is repeated multiple times to reach predetermined thickness, the stress of film can be reduced, reduce the warpage or shape of substrate
Become.
Based on this, the present invention provides a kind of film forming method, as shown in figure 1, comprising the following steps：
Step one：One substrate is put into a chamber, the chamber rises to a predetermined temperature, and is formed on the substrate
Film；
Step 2：Reduce the temperature of the substrate；
Repeat the above steps, until forming the film of predetermined thickness on the substrate.
After method using above-mentioned multiple segmentation film forming, the thicknesses of layers for being formed every time is relatively thin, and stress is smaller, also, complete
All can be the process of primary stress release from high temperature to low temperature into one-pass film-forming rear film, for the film phase made by the last time
When in the annealing that increased certain hour, being repaired to the defect (such as room) of film made by the last time, from
And reduce membrane stress.
The substrate is, for example, flexible base board, for forming OLED flexible displays.The film is, for example, thin aluminium (Al)
Film or copper (Cu) film, certainly, film forming method of the invention is simultaneously applicable not only to aluminium or Copper thin film, is equally applicable to other
Metallic film or nonmetal film, such as silica membrane, silicon nitride film etc..The generation type of the film is, for example,
Sputtering is evaporated.
Because the stress of film increases with the increase of thickness, thus, the thickness of film is more high more is susceptible to stress
Larger problem is also more suitable by the way of multiple film forming.Such as, use above-mentioned many when the thickness of film is more than 5000 angstroms
The method of secondary film forming can be substantially reduced stress.Certainly, the present invention is not intended to limit the thickness of film and the number of times of film forming, film
Stress can also be eliminated using such scheme when thickness is less than 5000 angstroms, and then alleviate warpage or the deformation of substrate.
The execution number of times of the step one is preferably 2~4 times, and the execution number of times of step 2 is preferably 1~3 time, such as,
3 films are formed on substrate, it is middle that substrate is lowered the temperature 2 times, the stress of film both can be preferably eliminated on this basis, and not
As for the excessive extension process time.It should be understood that the present invention is not intended to limit the number of times of film forming, if the film thickness for being formed compared with
Greatly, can suitably increase membrane formation times, so can preferably eliminate membrane stress.
The thickness of the film for being formed on the substrate every time can be with identical, it is also possible to differs.Every time in the substrate
The thickness of the film of upper formation can be between 1000 angstroms~3000 angstroms.Such as, the thickness of the film for being formed on substrate every time
It is identical, it is right in 2000 Izods.For another example, the thickness of the film for being formed on substrate for the first time is 1000 angstroms, and second in base
The thickness of the film formed on plate is 2000 angstroms, and the thickness of the film for being formed on substrate for the third time is 3000 angstroms.
Substrate can be removed chamber, be placed on the scheduled time of Temperature fall one (being such as 1~5 minute) in room temperature environment,
So as to reduce the temperature of the substrate, in such cases, substrate is not only from high temperature to low temperature, or is gone to greatly from vacuum environment
Compression ring border, the effect of film release stress is preferable.Certainly, substrate can also be not to move out chamber, but by reducing the temperature of chamber
Spend to reduce the temperature of substrate, the film forming again after substrate is down to predetermined temperature.
The present invention also provides a kind of oled panel forming method, including：
One substrate is provided；
The substrate is put into a chamber, the chamber rises to a predetermined temperature, and film is formed on the substrate；
Reduce the temperature of the substrate；
Repeatedly until forming the film of predetermined thickness on the substrate.
Oled panel forming method proposed by the present invention is described in further detail below, here, the film is to use
Make the second metal layer (M2) of OLED display panel.Alleged photoetching process includes photoresist coating, mask, exposure in below illustrating
The techniques such as light, etching and photoresist lift off, photoresist is by taking positive photoresist as an example.
First, there is provided a substrate, the substrate is, for example, glass substrate, plastic base or stainless steel substrate.The substrate
A preferably flexible base board, the flexible base board can be transparent substrate.The shape of the flexible base board can for plane, curved surface or
Other irregular shapes.It should be understood that the material and shape of the substrate are not limited herein.
Then, active layer is formed on the substrate.Chemical vapor deposition (CVD) technique shape on the substrate can be used
Into an amorphous silicon layer (a-Si), then using quasi-molecule laser annealing (ELA), solid phase crystallization (SPC) or crystallization inducing metal (MIC)
Etc. process, polysilicon layer (P-Si) is converted it into.
Then, photoetching process is carried out with graphical polysilicon layer, forms the active layer of switching transistor and driving transistor.
Then, gate insulation is formed on the substrate not covered by active layer in active layer and using chemical vapor deposition method
Layer.The material that the gate insulation layer is used is, for example, oxide, nitride or oxynitrides.
Then, the first metal layer (M1), the first metal layer are formed on gate insulation layer using sputtering or evaporation technology
The monofilm of the metal or alloy such as chromium (Cr), tungsten (W), titanium (Ti), thallium (Ta), molybdenum (Mo), aluminium (Al), copper (Cu) can be used,
Can also be using the laminated film being made up of multiple layer metal film.
Then, carry out photoetching process with the graphical the first metal layer, formed scan line, the bottom crown of storage capacitance,
The grid of power line, the grid of driving transistor and switching transistor.
Then, interlayer insulating film is formed using chemical vapor deposition method.The material that the interlayer insulating film is used is for example
It is oxide, nitride or oxynitrides.
Then, photoetching process is carried out, some vias is formed in the interlayer insulating film.
Then, second metal layer (M2) is formed on the interlayer insulating film using sputtering or evaporation technology.Described second
Metal level can be using the list of the metal or alloy such as chromium (Cr), tungsten (W), titanium (Ti), thallium (Ta), molybdenum (Mo), aluminium (Al), copper (Cu)
Tunic, it would however also be possible to employ the laminated film being made up of multiple layer metal film.Preferably, the second metal layer uses Mo/Al/Mo
Laminated film, form Mo films respectively in the upper and lower of Al films, can be spread with resistance Al, Al can also be reduced rear
The probability of projection is formed in continuous technique due to high temperature.The thickness of upper and lower two-layer Mo films can be used between 200~500 angstroms
The mode of one-pass film-forming.The thickness of Al films is between 5000~8000 angstroms.Certainly, also to can be replaced Ti thin for the Mo films
Film, accordingly, the second metal layer uses the complex thin film structure of Ti/Al/Ti.Or, the Al films can be replaced Cu
Film, accordingly, the second metal layer uses the complex thin film structure of Mo/Cu/Mo.
As a example by forming Al films using sputtering technology, can specifically be formed using following steps：
Sub-step 1：The substrate of Mo films will be formed with to be put into a chamber, the chamber rises to a predetermined temperature, described
Predetermined temperature forms the Al films of ground floor on the substrate for example between 100~200 degrees Celsius；
Sub-step 2：The substrate is removed into chamber, is placed at room temperature the scheduled time, e.g. 1~5 minute, to reduce
The temperature of the substrate；
Sub-step 3：The substrate is put into chamber again, the chamber rises to the predetermined temperature, in ground floor
The Al films of the second layer are formed on Al films；
Sub-step 4：The substrate is removed into chamber again, is placed at room temperature the scheduled time, e.g. 1~5 minute, with
Reduce the temperature of the substrate；
Sub-step 5：The substrate is put into chamber again, the chamber rises to the predetermined temperature, in the second layer
The Al films of third layer are formed on Al films, the gross thickness of above-mentioned three layers of Al films has reached predetermined thickness, the predetermined thickness
E.g. 5000~8500 angstroms.
Fig. 2 is membrane formation times and stress and the graph of a relation of substrate warp degree.As seen from Figure 2, with membrane formation times
Increase, the stress of film and the warpage of substrate all decrease.
After forming second metal layer, the graphical second metal layer of photoetching process can be carried out, to form switching transistor
Source-drain electrode and driving transistor source-drain electrode, the top crown of storage capacitance, data wire.Then, can be using known method shape
Into passivation insulation, anode, organic material functional layer and negative electrode, will not be repeated here.
Although it should be noted that being above the THIN COMPOSITE with the second metal layer in OLED display panel as Mo/Al/Mo
It is illustrated as a example by film, but in fact, film forming method of the invention is applicable not only in OLED display panel
Second metal layer making, can be applicable to the making of other films in OLED display panel, it is further, also applicable
Film in other display panels makes.Additionally, above-mentioned be situated between as a example by using most basic image element circuit 2TIC structures
The manufacturing process of the OLED display panel that continues, it should be appreciated that the image element circuit of the OLED display panel can use more crystal
Pipe and/or more storage capacitances.Also, the OLED display panel is not limited to the two metal layers of the example above, can
To be three-layer metal layer or more than four layers of metal level, accordingly, the film manufacturing method can be applied to the 3rd metal level
Or the 4th metal level making.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Scope.
Claims (10)
1. a kind of film forming method, it is characterised in that including：
Step one：One substrate is put into a chamber, the chamber rises to a predetermined temperature, and film is formed on the substrate；
Step 2：Reduce the temperature of the substrate；
Repeat the above steps until forming the film of predetermined thickness on the substrate.
2. film forming method as claimed in claim 1, it is characterised in that the film is metallic film.
3. film forming method as claimed in claim 2, it is characterised in that the film is aluminium film or Copper thin film.
4. film forming method as claimed in claim 1, it is characterised in that the forming method of the film is for sputtering or steams
Plating.
5. film forming method as claimed in claim 1, it is characterised in that the number of times for performing the step one is 2~4 times,
The number of times for performing the step 2 is 1~3 time.
6. film forming method as claimed in claim 1, it is characterised in that the thickness of the film is more than 5000 angstroms, described
The film thickness that step one is formed on substrate every time is 1000~3000 angstroms.
7. film forming method as claimed in claim 1, it is characterised in that in the step 2, the substrate is removed
The chamber, and a scheduled time in room temperature environment is positioned over, to reduce the temperature of the substrate.
8. film forming method as claimed in claim 1, it is characterised in that in the step 2, the substrate indwelling in
In the chamber, and the temperature of the chamber is reduced, to reduce the temperature of the substrate.
9. a kind of oled panel forming method, it is characterised in that including：
One substrate is provided；
Form the film of predetermined thickness on the substrate using the method as any one of claim 1 to 8.
10. oled panel forming method as claimed in claim 9, it is characterised in that form predetermined thickness on the substrate
Film before, active layer, gate insulation layer, the first metal layer and interlayer insulating film are sequentially formed on the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710011001.XA CN106783934A (en) | 2017-01-06 | 2017-01-06 | Film forming method and oled panel forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710011001.XA CN106783934A (en) | 2017-01-06 | 2017-01-06 | Film forming method and oled panel forming method |
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| Publication Number | Publication Date |
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| CN106783934A true CN106783934A (en) | 2017-05-31 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710011001.XA Pending CN106783934A (en) | 2017-01-06 | 2017-01-06 | Film forming method and oled panel forming method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109143465A (en) * | 2018-09-03 | 2019-01-04 | 中国科学院微电子研究所 | A kind of forming method of optical waveguide device |
| CN109904060A (en) * | 2019-02-01 | 2019-06-18 | 中国科学院微电子研究所 | Semiconductor structure and its production method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5834343A (en) * | 1995-08-31 | 1998-11-10 | Kabushiki Kaisha Toshiba | Method of manufacturing thin film transistor |
| CN1655654A (en) * | 2004-02-12 | 2005-08-17 | 日本东北先锋公司 | Panel substrate, display panel, organic EL panel, and method of manufacturing the same |
| CN106222619A (en) * | 2016-08-16 | 2016-12-14 | 京东方科技集团股份有限公司 | A kind of substrate, substrate and preparation method thereof, electronic device |
-
2017
- 2017-01-06 CN CN201710011001.XA patent/CN106783934A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5834343A (en) * | 1995-08-31 | 1998-11-10 | Kabushiki Kaisha Toshiba | Method of manufacturing thin film transistor |
| CN1655654A (en) * | 2004-02-12 | 2005-08-17 | 日本东北先锋公司 | Panel substrate, display panel, organic EL panel, and method of manufacturing the same |
| CN106222619A (en) * | 2016-08-16 | 2016-12-14 | 京东方科技集团股份有限公司 | A kind of substrate, substrate and preparation method thereof, electronic device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109143465A (en) * | 2018-09-03 | 2019-01-04 | 中国科学院微电子研究所 | A kind of forming method of optical waveguide device |
| CN109904060A (en) * | 2019-02-01 | 2019-06-18 | 中国科学院微电子研究所 | Semiconductor structure and its production method |
| CN109904060B (en) * | 2019-02-01 | 2021-05-04 | 中国科学院微电子研究所 | Semiconductor structure and manufacturing method thereof |
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Application publication date: 20170531 |