CN106783799B - A kind of millimeter wave induction structure - Google Patents
A kind of millimeter wave induction structure Download PDFInfo
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- CN106783799B CN106783799B CN201611245957.8A CN201611245957A CN106783799B CN 106783799 B CN106783799 B CN 106783799B CN 201611245957 A CN201611245957 A CN 201611245957A CN 106783799 B CN106783799 B CN 106783799B
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Abstract
The invention discloses a kind of millimeter wave induction structures, the shielded layer including on piece millimeter wave inductance and below the on piece millimeter wave inductance.The shielded layer includes multiple in the screen unit for dissipating spot distribution, each screen unit is made of the deep-well region of polysilicon or metal, contact hole, the well region of the first semiconductor type and the first semiconductor type from top to bottom, wherein, the deep-well region of each screen unit is connected and is grounded.Effective solution of the present invention shielding layer structure in the prior art is confined to typical round, rectangular inductance, and the problem of arbitrary shape inductance can not be efficiently applied to.
Description
Technical field
The present invention relates to integrated circuit fields, in particular to a kind of integrated circuit on piece millimeter wave induction structure.
Background technique
Inductance is the important passive device in radio frequency transceiver front end, and radio-frequency front-end transceiver module needs use integrated electricity
Sense mainly has: induction structure, power amplifier, oscillator, up-conversion mixer etc..Inductance plays in these modules
Important role.
By taking induction structure as an example, induction structure is one of the important module in radio frequency transceiver, is mainly used for communication system
It is middle to amplify the signal received from antenna, it is handled convenient for the receiver circuit of rear class.It is located at just because of noise amplifier entire
For receiver close to the level-one at first of antenna, its characteristic directly affects the quality that entire receiver receives signal.For inductance
For structure, the performance of inductance directly determines gain, noise, impedance matching of induction structure etc..
Usually, Q value is one of the important indicator an of inductance performance, and higher Q value means the energy storage damage of inductance
Consumption is less, that is to say, that being isolated between inductance and substrate is preferable.In addition, to the assessment of an inductance in addition to inductance value, Q value etc.
It further include influence of the inductance to other circuits in radio frequency system outside conventional performance index, if inductance itself and peripheral circuits
Isolation it is preferable, then inductance will not influence the work of other circuits at work.Since the area of integrated silicon inductor is usual
It is larger, how while guaranteeing inductance performance, reinforces inductance and be isolated with substrate, inductance with other circuits, for being applied to
It has great significance for the module of radio-frequency front-end.
The wavelength of millimeter wave is that 1~10 millimeter of electromagnetic wave claims millimeter wave, it is located at what microwave overlapped mutually with far infrared wave
Wave-length coverage, thus simultaneous the characteristics of there are two types of wave spectrums.Millimeter wave in communication, radar, guidance, remote sensing technology, radio astronomy, face
There is great meaning in terms of bed medicine and Wave Spectrum.The satellite-of large capacity can be realized using the millimeter-wave frequency of atmospheric window
Ground communication or terrestrial repetition communication.Low elevation angle precision tracking can be realized using the narrow beam and low sidelobe performance of millimeter wave antenna
Radar and imaging radar.It, need to be using the millimeter that can smoothly penetrate plasma when long-range missile or spacecraft are reentried
Wave realizes communication and guidance.High-resolution millimeter wave radiometer is suitable for the remote sensing of meteorologic parameter.With millimeter wave and submillimeter
The radiation wave spectrum in the radio astronomical telescope detection cosmic space of wave may infer that the ingredient of interstellar medium.
For millimeter wave inductance, since working frequency is higher (usually tens GHz), therefore it is required that there is higher Q
Value is reinforced inductance and is isolated with substrate, inductance with other circuits, for being applied to milli how while guaranteeing inductance performance
It has great significance for the module of metric wave front end.
Fig. 1 show the schematic diagram of induction structure in the prior art, is realized by the structure of the passive masking layer of substrate
Inductance is isolated with substrate.For the IC chip of 9 layers of metal level, top-level metallic and time
Top-level metallic is commonly used to production integrated inductor 1, and first layer metal is then used to make as shown in Figure 1 be located at below inductance 1
Passive masking separation layer 2, passive masking separation layer 2 is by a plurality of independence and in itself in the first layer metal line structure of 90 degree of rectangular shapeds
At.These first layer metal lines are vertical with eddy current direction caused by integrated inductor 1, to reach passive masking separation layer 2
Cut off influence of the inductance galvanomagnetic-effect to substrate.It is worth noting that, shape is usually different for millimeter wave inductance, with
Working frequency, application environment are different, and the construction and shape of inductance are also different.Therefore, traditional inductance shelter shown in FIG. 1
It is confined to conventional radio frequency circle, rectangular inductance, for millimeter wave inductance, this inductance shelter is simultaneously not suitable for.
Summary of the invention
It is a primary object of the present invention to overcome the deficiencies of existing technologies, propose using in the shielded layer for dissipating spot distribution
Structure can be good at the millimeter wave inductance for adapting to different shape, different operating frequency.
To reach above-mentioned purpose, the present invention provides a kind of millimeter wave induction structure, including on piece millimeter wave inductance and is located at
Shielded layer below the on piece millimeter wave inductance.The shielded layer includes multiple in the screen unit for dissipating spot distribution, each
The screen unit is from top to bottom by polysilicon or metal, contact hole, the well region of the first semiconductor type and the first semiconductor
The deep-well region of type forms, wherein the deep-well region of each screen unit is connected and is grounded.
Further, the size of the multiple screen unit is identical.
Further, the size of each screen unit is 1~5um.
Further, between the adjacent screen unit between be divided into 1~3um.
Further, the multiple screen unit is in array regular distribution.
Further, the on piece millimeter wave inductance is irregular shape.
Further, first semiconductor type is N-type.
It is an advantage of the current invention that the shielding that millimeter wave induction structure will be constituted in the earth shield unit for dissipating spot distribution
Layer, to the on piece millimeter wave inductance of arbitrary shape, can play the role of being isolated by it with substrate and with other circuits, from
And reduces millimeter wave inductor loss, improves millimeter wave induction quality factor.Compared to the prior art, the existing skill of effective solution
Shielding layer structure in art is confined to typical round, rectangular inductance, and the problem of arbitrary shape inductance can not be efficiently applied to.
Detailed description of the invention
Fig. 1 is the schematic diagram of induction structure in the prior art.
Fig. 2 is the schematic diagram of millimeter wave of embodiment of the present invention induction structure.
Fig. 3 is the structural schematic diagram of screen unit of the embodiment of the present invention
Specific embodiment
To keep the contents of the present invention more clear and easy to understand, below in conjunction with Figure of description, the contents of the present invention are made into one
Walk explanation.Certainly the invention is not limited to the specific embodiment, general replacement known to those skilled in the art
It is included within the scope of protection of the present invention.
Millimeter wave induction structure of the invention includes on-chip inductor 10 and the shielded layer below on piece millimeter wave inductance.
Wherein, on piece millimeter wave inductance is made by top-level metallic and time top-level metallic, and shielded layer includes the shielding list of multiple ground connection
Member 20, these screen units are arranged in scatterplot shape, can cut off influence of the millimeter wave inductance galvanomagnetic-effect to substrate.On piece millimeter
Wave inductance can have any shape coil, and screen unit then can be in array regular array.
Fig. 3 is referred to, each screen unit is made of polysilicon 21, contact hole 22, N trap 23 and deep N-well 24.Polysilicon
21 are connected by contact hole 22 with lower section N trap 23 and deep N-well.It should be noted that the deep N-well 24 of each screen unit is mutual
Connection, and deep N-well 24 is grounded, therefore is equivalent to below millimeter wave on-chip inductor and is formd multiple isolated grounding points, thus
Partition can be realized between on-chip inductor magnetic field and substrate and on-chip inductor magnetic field and other circuits well, so that lining
Bottom loss reduces, while also reducing the signal cross-talk to other circuit devcies.Although using N trap and depth N in this implementation
Trap, but can also be replaced with p-well and deep p-well.In addition, in other embodiments, polysilicon 21 can also be replaced with metal, it will be golden
Category equally passes through contact hole as the top layer of screen unit and is connected with lower section well region.In this implementation, the size of each screen unit
For 1~5um, preferably 2.5um.The size of each screen unit is all the same, to simplify manufacturing process.In addition, adjacent shields list
1~3um, preferably 1.5um are divided between member.
In induction structure shown in Fig. 2, millimeter wave on-chip inductor 10 is arc-shaped, the screen below arc-shaped inductance
It covers unit and forms multiple isolated grounding points, on piece millimeter wave inductance and substrate and other circuits are adequately isolated.For any
The millimeter wave on-chip inductor of shape, especially irregular shape can generate the magnetic force cable architectures of various complexity in substrate, this
The magnetic line of force is harmful, and the principal element for causing inductor loss, reducing quality factor.Through the invention in scatterplot shape point
The screen unit of cloth effectively can form destruction by the magnetic line of force to substrate, cut off the magnetic line of force, reduce inductor loss, improve electricity
Feel quality factor.
In conclusion compared to the prior art, the present invention will constitute millimeter wave in the earth shield unit for dissipating spot distribution
The shielded layer of induction structure, to the on piece millimeter wave inductance of arbitrary shape, can play it with substrate and with other circuits
The effect of isolation, to reduce millimeter wave inductor loss, improve millimeter wave induction quality factor.Compared to the prior art, effectively
The shielding layer structure in the prior art that solves be confined to typical round, rectangular inductance, and arbitrary shape can not be efficiently applied to
The problem of shape inductance.
Although the present invention is disclosed as above with preferred embodiment, right many embodiments are illustrated only for the purposes of explanation
, it is not intended to limit the invention, those skilled in the art can make without departing from the spirit and scope of the present invention
Several changes and retouches, and the protection scope that the present invention is advocated should be subject to described in claims.
Claims (7)
1. a kind of millimeter wave induction structure, the shielding including on piece millimeter wave inductance and below the on piece millimeter wave inductance
Layer, which is characterized in that the shielded layer include it is multiple in dissipate spot distribution screen unit, each screen unit on toward
Under be made of the deep-well region of polysilicon or metal, contact hole, the well region of the first semiconductor type and the first semiconductor type,
In, the deep-well region of each screen unit is connected and is grounded.
2. millimeter wave induction structure according to claim 1, which is characterized in that the size phase of the multiple screen unit
Together.
3. millimeter wave induction structure according to claim 2, which is characterized in that the size of each screen unit is 1-
5um。
4. millimeter wave induction structure according to claim 1, which is characterized in that the interval between the adjacent screen unit
For 1-3um.
5. millimeter wave induction structure according to claim 1, which is characterized in that the multiple screen unit is in array rule
Distribution.
6. millimeter wave induction structure according to claim 1, which is characterized in that the on piece millimeter wave inductance is irregular
Shape.
7. millimeter wave induction structure according to claim 1, which is characterized in that first semiconductor type is N-type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611245957.8A CN106783799B (en) | 2016-12-29 | 2016-12-29 | A kind of millimeter wave induction structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611245957.8A CN106783799B (en) | 2016-12-29 | 2016-12-29 | A kind of millimeter wave induction structure |
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| Publication Number | Publication Date |
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| CN106783799A CN106783799A (en) | 2017-05-31 |
| CN106783799B true CN106783799B (en) | 2019-06-21 |
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| CN201611245957.8A Active CN106783799B (en) | 2016-12-29 | 2016-12-29 | A kind of millimeter wave induction structure |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101465351A (en) * | 2007-12-17 | 2009-06-24 | 东部高科股份有限公司 | Inductor of semiconductor device and method for manufacturing the same |
| CN103346149A (en) * | 2013-07-11 | 2013-10-09 | 江苏博普电子科技有限责任公司 | Integrated circuit chip upper inductor with substrate shielding layer formed by PN junctions and metal strips |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3178100A4 (en) * | 2014-08-07 | 2018-01-24 | Intel Corporation | On-die inductor with improved q-factor |
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2016
- 2016-12-29 CN CN201611245957.8A patent/CN106783799B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101465351A (en) * | 2007-12-17 | 2009-06-24 | 东部高科股份有限公司 | Inductor of semiconductor device and method for manufacturing the same |
| CN103346149A (en) * | 2013-07-11 | 2013-10-09 | 江苏博普电子科技有限责任公司 | Integrated circuit chip upper inductor with substrate shielding layer formed by PN junctions and metal strips |
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| CN106783799A (en) | 2017-05-31 |
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