CN106783799A - A kind of millimeter wave induction structure - Google Patents
A kind of millimeter wave induction structure Download PDFInfo
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- CN106783799A CN106783799A CN201611245957.8A CN201611245957A CN106783799A CN 106783799 A CN106783799 A CN 106783799A CN 201611245957 A CN201611245957 A CN 201611245957A CN 106783799 A CN106783799 A CN 106783799A
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- Prior art keywords
- millimeter wave
- inductance
- induction structure
- screen unit
- screen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
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- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention discloses a kind of millimeter wave induction structure, including millimeter wave inductance and the screen layer below described upper millimeter wave inductance on piece.The screen layer includes multiple in the screen unit for dissipating spot distribution, each described screen unit is made up of the deep-well region of polysilicon or metal, contact hole, the well region of the first semiconductor type and the first semiconductor type from top to bottom, wherein, the deep-well region of each screen unit is connected and is grounded.The present invention effectively solves shielding layer structure of the prior art and is confined to typical round, square inductance, and cannot be efficiently applied to the problem of arbitrary shape inductance.
Description
Technical field
The present invention relates to integrated circuit fields, millimeter wave induction structure on more particularly to a kind of integrated circuit chip.
Background technology
Inductance is the important passive device in radio frequency transceiver front end, and radio-frequency front-end transceiver module needs to use integrated electricity
The main of sense has：Induction structure, power amplifier, oscillator, up-conversion mixer etc..Inductance is played in these modules
Important effect.
By taking induction structure as an example, induction structure is one of important module in radio frequency transceiver, is mainly used in communication system
The middle signal that will be received from antenna amplifies, and is easy to the receiver circuit of rear class to process.It is located at just because of noise amplifier whole
Close to the one-level at first of antenna, its characteristic directly affects the quality that whole receiver receives signal to receiver.For inductance
For structure, the performance of inductance directly determines gain, noise, impedance matching of induction structure etc..
As a rule, Q values are one of important indicators for inductance performance, and Q values higher mean that the energy storage of inductance is damaged
Consumption is less, that is to say, that isolating between inductance and substrate is preferable.In addition, to an assessment for inductance except inductance value, Q values etc.
Outside conventional performance index, in radio system also include influence of the inductance to other circuits, if inductance in itself with peripheral circuits
Isolation it is preferable, then inductance will not influence the work of other circuits at work.Because the area of integrated silicon inductor is usual
It is larger, how while inductance performance is ensured, strengthen inductance and isolate with other circuits with substrate, inductance, for being applied to
Had great significance for the module of radio-frequency front-end.
The wavelength of millimeter wave is that 1~10 millimeter of electromagnetic wave claims millimeter wave, and it overlaps mutually positioned at microwave and far infrared wave
Wave-length coverage, thus the characteristics of have two kinds of wave spectrums concurrently.Millimeter wave in communication, radar, guidance, remote sensing technology, radio astronomy, face
Bed medical science and Wave Spectrum aspect have great meaning.Using the millimeter-wave frequency of atmospheric window can realize the satellite of Large Copacity-
Ground communication or terrestrial repetition communicate.Low elevation angle precision tracking can be realized using the narrow beam and low sidelobe performance of millimeter wave antenna
Radar and imaging radar.When long-range missile or spacecraft are reentried, need to be using the millimeter that can smoothly penetrate plasma
Ripple is realized communication and is guided.High-resolution millimeter wave radiometer is applied to the remote sensing of meteorologic parameter.With millimeter wave and submillimeter
The radiation wave spectrum in the radio astronomical telescope detection cosmic space of ripple may infer that the composition of interstellar medium.
For millimeter wave inductance, because working frequency is (usually tens GHz) higher, therefore it is required that there is Q higher
Value, how while inductance performance is ensured, strengthens inductance and isolates with other circuits with substrate, inductance, for being applied to milli
Had great significance for the module of metric wave front end.
Fig. 1 show the schematic diagram of induction structure in the prior art, and it is realized by the structure of the passive masking layer of substrate
Inductance is isolated with substrate.For 9 layers of IC chip of metal level, top-level metallic and time
Top-level metallic is commonly used to make integrated inductor 1, and first layer metal is then used for making as shown in Figure 1 positioned at the lower section of inductance 1
Passive to shelter separation layer 2, passive separation layer 2 of sheltering is by a plurality of independence and in itself in 90 degree of first layer metal line structures of rectangular shaped
Into.These first layer metal lines are vertical with the vortex flow direction produced by integrated inductor 1, and passive separation layer 2 is sheltered so as to reach
Influence of the cut-out inductance galvanomagnetic-effect to substrate.It is worth noting that, for millimeter wave inductance, shape is generally different, with
Working frequency, applied environment are different, and the construction and shape of inductance are also different.Therefore, the traditional inductance shown in figure one shelters knot
Structure is confined to that conventional radio frequency is circular, square inductance, and for millimeter wave inductance, this inductance shelter is not applied to simultaneously.
The content of the invention
Defect it is a primary object of the present invention to overcome prior art, it is proposed that using in the screen layer for dissipating spot distribution
Structure, can be good at adapting to different shape, the millimeter wave inductance of different operating frequency.
To reach above-mentioned purpose, the present invention provides a kind of millimeter wave induction structure, including millimeter wave inductance and is located on piece
Screen layer below described upper millimeter wave inductance.The screen layer includes multiple screen units in scattered spot distribution, each
The screen unit is from top to bottom by polysilicon or metal, contact hole, the well region of the first semiconductor type and the first semiconductor
The deep-well region composition of type, wherein, the deep-well region of each screen unit is connected and is grounded.
Further, the size of the multiple screen unit is identical.
Further, the size of each screen unit is 1~5um.
Further, between the adjacent screen unit at intervals of 1~3um.
Further, the multiple screen unit is in array regular distribution.
Further, described upper millimeter wave inductance is irregular shape.
Further, first semiconductor type is N-type.
It is an advantage of the current invention that the shielding for millimeter wave induction structure being constituted in the earth shield unit for dissipating spot distribution
Layer, to millimeter wave inductance on the piece of arbitrary shape, can play a part of to isolate it with substrate and with other circuits, from
And reduce millimeter wave inductor loss, improve millimeter wave induction quality factor.Compared to prior art, existing skill is effectively solved
Shielding layer structure in art is confined to typical round, square inductance, and cannot be efficiently applied to the problem of arbitrary shape inductance.
Brief description of the drawings
Fig. 1 is the schematic diagram of induction structure in the prior art.
Fig. 2 is the schematic diagram of embodiment of the present invention millimeter wave induction structure.
Fig. 3 is the structural representation of embodiment of the present invention screen unit
Specific embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Step explanation.Certainly the invention is not limited in the specific embodiment, the general replacement known to those skilled in the art
Cover within the scope of the present invention.
Millimeter wave induction structure of the invention includes on-chip inductor 10 and the screen layer below millimeter wave inductance on piece.
Wherein, millimeter wave inductance is made by top-level metallic and time top-level metallic on piece, and screen layer includes the shielding list of multiple ground connection
Unit 20, these screen units are arranged in scatterplot shape, can cut off influence of the millimeter wave inductance galvanomagnetic-effect to substrate.Millimeter on piece
Ripple inductance can have any shape coil, and screen unit can be in then array regular array.
Fig. 3 is referred to, each screen unit is made up of polysilicon 21, contact hole 22, N traps 23 and deep N-well 24.Polysilicon
21 are connected by contact hole 22 with lower section N trap 23 and deep N-well.It should be noted that the deep N-well 24 of each screen unit is mutually interconnected
Connect, and deep N-well 24 is grounded, therefore equivalent in millimeter wave on-chip inductor multiple isolated earth points formed below, so as to
It is enough to realize cut-off between on-chip inductor magnetic field and substrate, and on-chip inductor magnetic field and other circuits well so that substrate
Loss reduces, while also reducing the signal cross-talk to other circuit devcies.Although using N traps and deep N-well in this implementation,
But can also be replaced with p-well and deep p-well.Additionally, in other embodiments, it is also possible to replace polysilicon 21 with metal, by metal
Top layer as screen unit is connected again by contact hole with lower section well region.In this implementation, the size of each screen unit is 1
~5um, preferably 2.5um.The size all same of each screen unit, to simplify manufacturing process.Additionally, adjacent shields unit it
Between at intervals of 1~3um, preferably 1.5um.
In the induction structure shown in Fig. 2, millimeter wave on-chip inductor 10 is arc-shaped, the screen below arc-shaped inductance
Cover unit and form multiple isolated earth points, millimeter wave inductance on piece is adequately isolated with substrate and other circuits.For any
The millimeter wave on-chip inductor of shape, particularly irregular shape, it can produce various complicated magnetic force cable architectures in substrate, this
The magnetic line of force is harmful, is also to cause inductor loss, reduce the principal element of quality factor.By of the invention in scatterplot shape point
The screen unit of cloth, the magnetic line of force that can be effectively to substrate forms destruction, cuts off the magnetic line of force, reduces inductor loss, improves electricity
Sense quality factor.
In sum, compared to prior art, the present invention will constitute millimeter wave in the earth shield unit for dissipating spot distribution
The screen layer of induction structure, to millimeter wave inductance on the piece of arbitrary shape, can play it with substrate and with other circuits
The effect of isolation, so as to reduce millimeter wave inductor loss, improve millimeter wave induction quality factor.Compared to prior art, effectively
The shielding layer structure of the prior art that solves be confined to typical round, square inductance, and arbitrary shape cannot be efficiently applied to
The problem of shape inductance.
Although the present invention is disclosed as above with preferred embodiment, right many embodiments are illustrated only for the purposes of explanation
, the present invention is not limited to, those skilled in the art can make without departing from the spirit and scope of the present invention
Some changes and retouching, the protection domain that the present invention is advocated should be to be defined described in claims.
Claims (7)
1. a kind of millimeter wave induction structure, including millimeter wave inductance and the shielding below described upper millimeter wave inductance on piece
Layer, it is characterised in that the screen layer include it is multiple in the screen units for dissipating spot distribution, each described screen unit on toward
Under be made up of the deep-well region of polysilicon or metal, contact hole, the well region of the first semiconductor type and the first semiconductor type, its
In, the deep-well region of each screen unit is connected and is grounded.
2. millimeter wave induction structure according to claim 1, it is characterised in that the size phase of the multiple screen unit
Together.
3. millimeter wave induction structure according to claim 2, it is characterised in that the size of each screen unit is 1-
5um。
4. millimeter wave induction structure according to claim 1, it is characterised in that the interval between the adjacent screen unit
It is 1-3um.
5. millimeter wave induction structure according to claim 1, it is characterised in that the multiple screen unit is in array rule
Distribution.
6. millimeter wave induction structure according to claim 1, it is characterised in that described upper millimeter wave inductance is irregular
Shape.
7. millimeter wave induction structure according to claim 1, it is characterised in that first semiconductor type is N-type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611245957.8A CN106783799B (en) | 2016-12-29 | 2016-12-29 | A kind of millimeter wave induction structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611245957.8A CN106783799B (en) | 2016-12-29 | 2016-12-29 | A kind of millimeter wave induction structure |
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| Publication Number | Publication Date |
|---|---|
| CN106783799A true CN106783799A (en) | 2017-05-31 |
| CN106783799B CN106783799B (en) | 2019-06-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201611245957.8A Active CN106783799B (en) | 2016-12-29 | 2016-12-29 | A kind of millimeter wave induction structure |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101465351A (en) * | 2007-12-17 | 2009-06-24 | 东部高科股份有限公司 | Inductor of semiconductor device and method for manufacturing the same |
| CN103346149A (en) * | 2013-07-11 | 2013-10-09 | 江苏博普电子科技有限责任公司 | Integrated circuit chip upper inductor with substrate shielding layer formed by PN junctions and metal strips |
| WO2016022124A1 (en) * | 2014-08-07 | 2016-02-11 | Intel Corporation | On-die inductor with improved q-factor |
-
2016
- 2016-12-29 CN CN201611245957.8A patent/CN106783799B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101465351A (en) * | 2007-12-17 | 2009-06-24 | 东部高科股份有限公司 | Inductor of semiconductor device and method for manufacturing the same |
| CN103346149A (en) * | 2013-07-11 | 2013-10-09 | 江苏博普电子科技有限责任公司 | Integrated circuit chip upper inductor with substrate shielding layer formed by PN junctions and metal strips |
| WO2016022124A1 (en) * | 2014-08-07 | 2016-02-11 | Intel Corporation | On-die inductor with improved q-factor |
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| Publication number | Publication date |
|---|---|
| CN106783799B (en) | 2019-06-21 |
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