CN106783566A - A kind of N-type Ohm contact production method of Ge - Google Patents
A kind of N-type Ohm contact production method of Ge Download PDFInfo
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- CN106783566A CN106783566A CN201611072571.1A CN201611072571A CN106783566A CN 106783566 A CN106783566 A CN 106783566A CN 201611072571 A CN201611072571 A CN 201611072571A CN 106783566 A CN106783566 A CN 106783566A
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- Prior art keywords
- ohmic contact
- drain electrode
- source
- metal
- preparation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Abstract
It is as follows the step of the method the invention discloses a kind of preparation method of germanium base N-type Ohmic contact source-drain electrode：Ohmic contact regions and non-ohmic contact area are defined on the N-type germanium semiconductor of heavy doping；In ohmic contact regions evaporated metal nickel tin metal, and carry out stripping technology；Then alloying technology is carried out so that nickel tin forms semi metallic compound with N-type germanium semiconductor；Finally make source-drain electrode metallic nickel/aluminum metal.
Description
Technical field
The invention belongs to integrated circuit technology manufacturing technology field, and in particular to a kind of Ohmic contact of germanium base device makes
Method
Background technology
With the continuous progress of CMOS technology, by down feature sizes, the characteristic of MOS device is constantly lifted.But 7
After nm technology node, silicon-based semiconductor faces lot of challenges：Mobil-ity degradation, Punchthrough electric leakage, hot carrier's effect
Etc..Wherein mobil-ity degradation is the Major Difficulties for influenceing the lifting of integrated circuit speed.Therefore, new channel material is considered as
It is the key for advancing silicon substrate MOS device to continue to lift up performance.The electron mobility and hole mobility of germanium material are better than silicon, with
Silicon-based semiconductor processing compatibility is good, so as to by extensive concern.At present, the interfacial characteristics of germanium base MOS device has very big carrying
Rise, p-type Ohmic contact also achieves preferably progress.And germanium base N-type Ohmic contact still needs big lifting, with realization and silicon
The matching and performance boost of based semiconductor device.
The content of the invention
In order to solve the above problems, the present invention proposes one kind and carries out alloy using nickeltin metal and Ge-based semiconductor
The source and drain Ohmic contact method of change, effectively reduces the resistivity of source and drain ohmic contact regions, and the introducing for passing through tin metal, reduces
Barrier height and width in Ohmic contact in hot carrier tunnel mechanism.So as to be effectively reduced ohmic contact resistance rate, carry
The performance of germanium base nmos device high.
The preparation method of the source-drain electrode of N-type Ohmic contact proposed by the present invention, carries out following step successively：
(1) ohmic contact regions and non-ohmic contact area are defined on the N-type germanium semiconductor of heavy doping；
(2) nickel tin metal layer is deposited, and carries out stripping technology and form source and drain alloyed region；
(3) alloy is carried out in 300-500 degree temperature ranges, semi metallic compound is formed；
(4) source-drain electrode region is defined using photoetching process；
(5) using electron beam evaporation process evaporating drain and source electrode metal nickel aluminum (20/200 nanometer), stripping technology shape is carried out
Into electrode.
In above-mentioned steps (2), before nickeltin metal is deposited, surface clean is carried out, cleaning method is dilution
10% hydrochloric acid solution is cleaned 2 minutes.
The method of deposited metal is sputtering in above-mentioned steps (2), and sputtering power is 50-100 watts, deposition nickeltin gold
The thickness of category is 5-15 nanometers.
The ratio of tin is 10%-20% in deposition nickeltin metal in above-mentioned steps (2).
Alloy temperature is 400 degree in above-mentioned steps (3), and the alloy time is 3-10 minutes.
Beneficial effect
The method that use nickel tin proposed by the present invention forms semi metallic compound with germanium semiconductor by alloy, can be effective
Ground reduces the square resistance of source and drain areas, and can carry out good contact with the semimetal by nickel silicon source leakage metal electrode,
Form relatively low source and drain ohmic contact resistance.By the effective breakthrough in terms of the two, the present invention can realize germanium base NMOS devices
Part source and drain dead resistance is obviously reduced.
Brief description of the drawings：
Fig. 1 is the flow chart of the source-drain electrode preparation method of the N-type Ohmic contact that embodiment is used.
Specific implementation method
Below in conjunction with the accompanying drawings, technological process of the invention is further elaborated by specific embodiment：
Fig. 1 is the flow chart of the source-drain electrode preparation method of the N-type Ohmic contact that the present embodiment is used：
Step 1：Ohmic contact regions and non-ohm are defined using reversal photoresist on the N-type germanium semiconductor of a heavy doping
Contact zone；
Step 2：Using sputtering method in 30 nanometers of the germanium semiconductor deposition on substrate nickel tin metal layer, nickel tin metal is logical
Making nickel tin metal target is crossed, then carries out what sputtering processing was realized in sputtering equipment.Stripping technology is carried out after the completion of sputtering
Form source and drain alloyed region；
Step 3：Alloy is carried out in 400 degree of temperature ranges, the alloy time is 3 minutes, forms the half of germanium-nickeltin
Metallic compound, the semi metallic compound is sufficiently merged by nickel tin metal with germanium semiconductor, realizes N-type germanium material
Semi-metal, so as to realize that its resistivity declines, reaches the effect for reducing source and drain dead resistance；
Step 4：Using the method for reversion glue photoetching, source-drain electrode region is defined；
Step 5：Using electron beam evaporation process evaporated metal nickel aluminum (20/200 nanometer)；And carry out stripping technology and formed
Electrode.
Claims (5)
1. a kind of preparation method of germanium base N-type Ohmic contact source-drain electrode, its key step is as follows：
(1) ohmic contact regions and non-ohmic contact area are defined on the N-type germanium semiconductor of heavy doping；
(2) nickel tin metal layer is deposited, and carries out stripping technology and form source and drain alloyed region；
(3) alloy is carried out in 300-500 degree temperature ranges, semi metallic compound is formed；
(4) source-drain electrode region is defined using photoetching process；
(5) using electron beam evaporation process evaporated metal nickel aluminum (20/200 nanometer), and electrode is formed using stripping technology.
2. the preparation method of a kind of germanium base N-type Ohmic contact source-drain electrode according to claim 1, it is characterised in that in step
Suddenly the method for deposition nickeltin metal is sputtering in (2), and sputtering power is 50-100 watts.
3. the preparation method of a kind of germanium base N-type Ohmic contact source-drain electrode according to claim 1, it is characterised in that in step
Suddenly the thickness of deposition nickeltin metal is 5-15 nanometers in (2).
4. the preparation method of a kind of germanium base N-type Ohmic contact source-drain electrode according to claim 1, it is characterised in that in step
Suddenly the ratio of tin is 10%-20% in deposition nickeltin metal in (2).
5. the preparation method of a kind of germanium base N-type Ohmic contact source-drain electrode according to claim 1, it is characterised in that in step
Suddenly alloy temperature is 400 degree in (3), and the alloy time is 3-10 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611072571.1A CN106783566A (en) | 2016-11-29 | 2016-11-29 | A kind of N-type Ohm contact production method of Ge |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611072571.1A CN106783566A (en) | 2016-11-29 | 2016-11-29 | A kind of N-type Ohm contact production method of Ge |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106783566A true CN106783566A (en) | 2017-05-31 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611072571.1A Pending CN106783566A (en) | 2016-11-29 | 2016-11-29 | A kind of N-type Ohm contact production method of Ge |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109473468A (en) * | 2018-10-26 | 2019-03-15 | 中国科学院微电子研究所 | Semiconductor devices and its production method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5830171A (en) * | 1981-08-15 | 1983-02-22 | Stanley Electric Co Ltd | Compound semiconductor element and forming method of its electrode |
| CN102280454A (en) * | 2011-08-22 | 2011-12-14 | 中国科学院半导体研究所 | Semiconductor transistor structure and making method thereof |
| CN102648515A (en) * | 2009-10-02 | 2012-08-22 | 阿肯色州电力电子国际有限公司 | Semiconductor device and method of fabricating the semiconductor device |
| CN103594518A (en) * | 2013-11-08 | 2014-02-19 | 清华大学 | Metal source-drain structure and forming method thereof |
| CN103700620A (en) * | 2013-12-26 | 2014-04-02 | 中国科学院微电子研究所 | Method for manufacturing metal and n-type semiconductor germanium source drain contact |
| CN105470288A (en) * | 2015-10-14 | 2016-04-06 | 西安电子科技大学 | Delta channel doping SiC vertical power MOS device manufacturing method |
-
2016
- 2016-11-29 CN CN201611072571.1A patent/CN106783566A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5830171A (en) * | 1981-08-15 | 1983-02-22 | Stanley Electric Co Ltd | Compound semiconductor element and forming method of its electrode |
| CN102648515A (en) * | 2009-10-02 | 2012-08-22 | 阿肯色州电力电子国际有限公司 | Semiconductor device and method of fabricating the semiconductor device |
| CN102280454A (en) * | 2011-08-22 | 2011-12-14 | 中国科学院半导体研究所 | Semiconductor transistor structure and making method thereof |
| CN103594518A (en) * | 2013-11-08 | 2014-02-19 | 清华大学 | Metal source-drain structure and forming method thereof |
| CN103700620A (en) * | 2013-12-26 | 2014-04-02 | 中国科学院微电子研究所 | Method for manufacturing metal and n-type semiconductor germanium source drain contact |
| CN105470288A (en) * | 2015-10-14 | 2016-04-06 | 西安电子科技大学 | Delta channel doping SiC vertical power MOS device manufacturing method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109473468A (en) * | 2018-10-26 | 2019-03-15 | 中国科学院微电子研究所 | Semiconductor devices and its production method |
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Application publication date: 20170531 |