CN106771779A - The lossless screening technique of resistor Radiation hardness and device - Google Patents
The lossless screening technique of resistor Radiation hardness and device Download PDFInfo
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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Abstract
The invention provides a kind of lossless screening technique of resistor Radiation hardness and device, method includes：Obtain the resistance value and 1/f noise voltage power spectral amplitude ratio as the resistor predose of random increment；Obtain as the resistor of random increment by the resistance value after irradiation；The resistance value of the resistor based on predose and the resistance value by the resistor after irradiation, calculate the resistance value drift value after predose；Using 1/f noise voltage power spectral amplitude ratio as information parameter, using resistance value drift value as irradiation behaviour parameter, multiple linear regression equations are set up, and calculate the coefficient vector in equation of linear regression；Based on coefficient vector, the lossless screening regression prediction equation set up between information parameter and irradiation behaviour parameter；Using the lossless screening regression prediction equation, to being screened with batch other resistor device regions.The present invention can realize on the premise of to resistor without damage, carry out the test screen to component accurately and efficiently Radiation hardness.
Description
Technical field
The present invention relates to electronic apparatus technical field, in particular to a kind of lossless screening of resistor Radiation hardness
Method and device.
Background technology
Resistor to being applied to space environment, will often be subject to the various radiation interferences of space environment, including space spoke
Penetrate, electromagnetic radiation and alpha-radiation, and due to Space Facilities in space in cannot service mode, it is desirable to its electronics unit
The characteristics of device possesses long lifespan；Therefore for electronic component used by Space Facilities reliability requirement more than in other electronics
Requirement in system is more harsh, for these reasons, it is necessary to the anti-spoke of space flight resistor before upper machine or before transmitting
Ability is penetrated effectively to be detected, evaluated and screened.
In the prior art, the mode to test and the screening of the Radiation hardness of space flight resistor mainly has two kinds, bag
Include：" irradiation-annealing " method and multiple regression analysis method；Wherein, irradiation-annealing screening technique all uses American army mark MIL-STD-
The specific experimental technique that 883D is given, detailed process carry out the spoke of nominal dose as shown in figure 1, treating screening device first
According to；Then one or several sensitive electrical parameters are selected, measurement was completed in two hours, screen out undesirable device；
Then the irradiation of 50% nominal dose is carried out；Then electrical testing is carried out again after pressurization annealing；Finally filter out suitable device.
This method has that testing cost is high, detection time is long and with certain destructive defect；And due to using heavy dose of
The method that rate experiment carrys out equivalent space LDR radiation environment, analog result is often inaccurate.Polynary time of the prior art
The technological difficulties for returning analysis method are the informations parameter for how selecting sensitivity, can both realize that the Radiation hardness of predose was pre-
Survey, and be closely connected with the microscopic damage of device, it is common practice to from predose resistance value drift as information parameter, spoke
Used as irradiation behaviour parameter, the change that this kind of method ignores noise amplitude B directly reflects in device resistance value drift according to after
Defect state this feature, cause regression prediction equation not accurate enough, the accuracy of the screening of final influence resistor and
Reliability.
The content of the invention
In view of this, the purpose of the embodiment of the present invention be provide a kind of lossless screening technique of resistor Radiation hardness and
Device, to solve the above problems.
In a first aspect, a kind of lossless screening technique of resistor Radiation hardness is the embodiment of the invention provides, including：
Obtain the resistance value and 1/f noise voltage power spectral amplitude ratio as the resistor predose of random increment；
The resistor as random increment is obtained by the resistance value after irradiation；
The resistance value of the resistor based on predose and the resistance value by the resistor after irradiation, after calculating predose
Resistance value drift value；
Data are pre-processed, using the 1/f noise voltage power spectral amplitude ratio as information parameter, with the resistance value
Drift value sets up multiple linear regression equations, and calculate the coefficient vector in equation of linear regression as irradiation behaviour parameter；
Based on the coefficient vector, the lossless screening regression forecasting set up between described information parameter and irradiation behaviour parameter
Equation；
Using the lossless screening regression prediction equation, the anti-radiation performance of single resistance device is predicted, other are criticized to same
Resistor device region is screened.
With reference in a first aspect, the embodiment of the invention provides the first possible implementation method of first aspect, wherein：
The 1/f noise voltage power spectral amplitude ratio for obtaining random increment resistor includes：
The bias current at resistor two ends is set；
Noise signal is drawn in resistor output end；
Preposition amplification is carried out to the noise signal, preamplification signal is obtained；
The preamplification signal is gathered, 1/f noise voltage power spectral amplitude ratio is calculated.
With reference in a first aspect, the embodiment of the invention provides second possible implementation method of first aspect, wherein：
It is described to utilize the lossless screening regression prediction equation, the anti-radiation performance of single resistor is tested, to batch electricity
Resistance device is screened, including：
Obtain the resistance value and low-frequency noise amplitude of resistor to be screened；
Based on the resistance value and low-frequency noise amplitude, using the regression prediction equation, the resistance of this resistor is obtained
Value drift amount predicted value；
The resistance drift tolerance limit of the resistance value drift value predicted value and this batch of resistor is compared, if described pre-
Measured value is within the resistance value drift tolerance limit of this quasi-resistance device, then it is assumed that this resistor is qualified products；, whereas if described pre-
Measured value is not within the resistance value drift tolerance limit of this quasi-resistance device, then it is assumed that this resistor is substandard product.
Second aspect, the embodiment of the invention provides a kind of lossless screening plant of resistor Radiation hardness,
Including：
First acquisition unit, for obtaining as the resistance value and 1/f noise voltage of the resistor predose of random increment
Power spectral amplitude ratio；
Second acquisition unit, for obtaining the resistor as random increment by the resistance value after irradiation；
Computing unit, the resistance value for the resistor based on predose and the resistance value by the resistor after irradiation,
Calculate the resistance value drift value after predose；
Equation of linear regression sets up unit, and data are pre-processed, using the 1/f noise voltage power spectral amplitude ratio as
Information parameter, using the resistance value drift value as irradiation behaviour parameter, sets up multiple linear regression equations, and calculate linear returning
The coefficient vector returned in equation；
Lossless screening regression prediction equation sets up unit, for based on the coefficient vector, setting up described information parameter, 1/
Lossless screening regression prediction equation between f noise voltage power spectral amplitude ratios and irradiation behaviour parameter；
Test cell, the anti-radiation performance for predicting single resistance device, to being sieved with batch other resistor device regions
Choosing.
Method and device that the embodiment of the present invention is provided, can realize on the premise of to resistor without damage, entering
Row is tested to resistor Radiation hardness, and then realizes accurately and efficiently filtering out the strong resistor unit of Radiation hardness
Device.
To enable the above objects, features and advantages of the present invention to become apparent, preferred embodiment cited below particularly, and coordinate
Appended accompanying drawing, is described in detail below.
Brief description of the drawings
Technical scheme in order to illustrate more clearly the embodiments of the present invention, below will be attached to what is used needed for embodiment
Figure is briefly described, it will be appreciated that the following drawings illustrate only certain embodiments of the present invention, thus be not construed as it is right
The restriction of scope, for those of ordinary skill in the art, on the premise of not paying creative work, can also be according to this
A little accompanying drawings obtain other related accompanying drawings.
Fig. 1 shows " irradiation-annealing " method flow schematic diagram in the prior art；
Fig. 2 shows a kind of method stream of lossless screening technique of resistor Radiation hardness that the embodiment of the present invention is provided
Journey schematic diagram；
Fig. 3 shows that the structure of the measuring system of the 1/f noise voltage power spectral amplitude ratio B that the embodiment of the present invention is provided is shown
It is intended to；
Fig. 4 shows that a kind of structure of lossless screening plant of resistor Radiation hardness that the embodiment of the present invention is provided is shown
It is intended to.
Specific embodiment
Below in conjunction with accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Ground description, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.Generally exist
The component of the embodiment of the present invention described and illustrated in accompanying drawing can be arranged and designed with a variety of configurations herein.Cause
This, the detailed description of the embodiments of the invention to providing in the accompanying drawings is not intended to limit claimed invention below
Scope, but it is merely representative of selected embodiment of the invention.Based on embodiments of the invention, those skilled in the art are not doing
The every other embodiment obtained on the premise of going out creative work, belongs to the scope of protection of the invention.
For the resistance device for being applied to aerospace system, analyze available from micromechanism, the change of resistance value and its
Closely, noise amplitude B's changes the defect shape for directly reflecting in device to the variation relation of carrier number N and carrier mobility
State.Noise amplitude accordingly increases with the increase of irradiation dose, shows increasing with irradiation dose, and the defect that device is produced increases i.e.
The damage for causing is also more serious.But existing resistor screening technique does not choose close with device defects variation relation
Information parameter, this necessarily causes the not accurate enough of regression prediction equation, makes to include with scarce in the device for screening
Sunken device；Based on this, the method that the embodiment of the present invention is provided can accomplish to resistor it is undamaged under the premise of, pass through
Using noise amplitude, this parameter carries out regression analysis, improves test accuracy, it is ensured that be screened resistor component can
By property.
Carry out that technical solution of the present invention is discussed in detail below by specific embodiment.
As shown in figure 1, a kind of lossless screening technique of resistor Radiation hardness is the embodiment of the invention provides, including it is as follows
Step：
S201, obtain as random increment resistor predose resistance value R and 1/f noise voltage power spectral amplitude ratio B；
Before carrying out in above-mentioned steps, first need to be from the sampling parent of a collection of resistor according to simple random sampling principle
N random increment is extracted, n is more than or equal to 20；Measure the resistance value R and 1/f noise voltage power of these random increment resistors
Spectral amplitude ratio B, and record test condition；
The 1/f noise voltage power spectral amplitude ratio B of the above-mentioned random increment resistor of acquisition comprises the following steps：
A, the bias voltage that resistor two ends are set；
B, resistor output end draw noise signal；
C, preposition amplification is carried out to above-mentioned noise signal, obtain preamplification signal；
The described preamplification signal of d, collection, is calculated 1/f noise voltage power spectral amplitude ratio.
S202, the acquisition resistor as random increment are by the resistance value R ' after irradiation；
It should be noted that the close rate and accumulated dose of the irradiation of above-mentioned irradiation experiment are specified according to specific resistance device
Irradiation dose is set, in order to simulate space radiation environment, it is preferable that close rate is arranged between 50 to 300rad (Si)/s,
And to be limited in irradiation latter two hour within complete measurement, in order to avoid device annealing have a strong impact on test result.
S203, the resistance value R of the resistor based on predose and the resistance value R ' by the resistor after irradiation, calculate spoke
According to front and rear resistance value drift value：Δ R=R '-R；；
S204, data are pre-processed, using 1/f noise voltage power spectral amplitude ratio B as information parameter, floated with resistance value
Shifting amount Δ R is used as irradiation behaviour parameter, the multiple linear regression equations set up between B and Δ R：And calculate line
Coefficient vector in property regression equationWherein, X is the matrix that information parameter B is constituted,It is residual error；
Further, the coefficient vector in multiple linear regression equations is calculatedCarry out according to the following procedure：
Step 1, by above-mentioned multiple linear regression equations can further spread out for：
Wherein, Δ R1、ΔR2、...、ΔRnFor the 1st, 2 ..., resistance value drift value after the irradiation of n random increment；
B1、B2、...、BnFor the 1st, 2 ..., the predose noise amplitude of n random increment；β0It is constant term, β1It is noise
The coefficient of amplitude；
ε1、ε2、...、εnFor the 1st, 2 ..., the residual error of n random increment equation of linear regression；
Step 2, the coefficient vector for estimating information parameter using least squares estimate are：
XTIt is the transposed matrix of X.
S205, based on coefficient vector, the lossless screening set up between information parameter B and irradiation behaviour parameter, Δ R returns pre-
Survey equation：Wherein,It is measured value
The predicted value of corresponding resistance value drift value,
T (1- α/2, (n-2)) is that the t that confidence level is 1- α is distributed,
It is residual error, X is the constant matrices being made up of B,It is the parameter vector of device to be screened, εl、Xl、Respectively ε
With the transposition of X.
Under given 1- α confidence levels, resistance device information parameter vector to be screenedWherein B is to wait to sieve
The noise amplitude for selecting device to survey, the then lossless screening regression forecasting value of resistance value drift value after it is irradiatedFor：
Wherein：T (1- α/2, (n-2)) is that the free degree is n-2, and quantile is distributed for the t of 1- α/2,
MSE is defined as follows：
SSE is variance quadratic sum,It is residual error,
S206, using above-mentioned lossless screening regression prediction equation, predict the anti-radiation performance of individual devices, to batch other
Resistor device region is screened.
Further, using lossless screening regression prediction equation, the anti-radiation performance of single resistor is tested, to batch electricity
Resistance device is screened, including：
First, the noise amplitude B of device to be screened is measured, measuring condition is identical with the measuring condition in step S201,
This parameter brings regression prediction equation into, obtains the resistance drift predicted value of this device.By this predicted value and this batch of resistance device
The resistance value drift tolerance value for being given in handbook is compared, if this predicted value is within this batch of drift tolerance limit of device,
Then think that the resistance device, by screening, is qualified products；, whereas if the predicted value for obtaining falling to hold in this batch of drift of device
Outside limit, then it is assumed that the resistance device is removed not over screening.
It should be noted that test of the present invention to noise amplitude B is composed using 1/f noise voltage power as shown in Figure 3
The measuring system of amplitude B, the system includes：Power supply, measured resistance device adapter, bias device, low-noise preamplifier sum
According to collection and analysis system；Wherein, measured resistance device adapter and bias device are mainly the tool according to device under test noise testing
Body requirement, there is provided bias condition, loading condition, is allowed in corresponding test mode；Noise signal to be measured is by preceding storing
The microcomputer that big device and data collecting card are sent to data collection and transmission carries out the analyzing and processing of data, stores and prints defeated
Go out；Data collecting card uses DAQ2010 data collecting cards, and its maximum sampling rate is 2MHz, and quantified precision is 14bit, with reality
Existing signal is real-time, fast and accurately gather, and ensure larger frequency range and measuring accuracy.
The screening technique that the embodiment of the present invention is provided is quick as irradiating from the 1/f noise amplitude of resistance device predose
Sense parameter is information parameter, is irradiation behaviour parameter as irradiation degeneration parameter from resistance value drift value after irradiation, by right
Certain amount sample carries out irradiation test, finds out the functional relation between information parameter and irradiation behaviour parameter, and this function is closed
System is also applied for batch other devices, and then realizes the screening to non-irradiated device Radiation hardness；From resistance device irradiation
Preceding this parameter of 1/f noise spectral amplitude ratio reflects two influence factors of resistance value drift after resistance device irradiation comprehensively：Carry
Stream subnumber N fluctuations and mobility u fluctuations, i.e., characterize carrier number N and mobility u fluctuations with 1/f noise voltage power spectral amplitude ratio
Device Radiation hardness is influenceed；Compared with existing screening technique, with advantages below：
1st, the device for screening is, without irradiation, to belong to " lossless screening ", therefore screening process will not reduce device
The part life-span；
2nd, due to having reelected 1/f noise voltage power spectral amplitude ratio B as information parameter, contain measured information parameter
Two factors of resistance value drift when resistance device is irradiated have been covered, thus the screening degree of accuracy is higher；
3rd, a parameter of device to be screened need to be only measured, cycle is short is screened, method is simple, it is easy to use.
As shown in figure 4, the embodiment of the present invention additionally provides a kind of lossless screening plant of resistor Radiation hardness, including：
First acquisition unit 410, for obtaining as resistance value and the 1/f noise electricity of the resistor predose of random increment
Pressure power spectral amplitude ratio；
Second acquisition unit 420, for obtaining the resistor as random increment by the resistance value after irradiation；
Computing unit 430, the resistance value for the resistor based on predose and the resistance by the resistor after irradiation
Value, calculates the resistance value drift value after predose；
Equation of linear regression sets up unit 440, and data are pre-processed, using 1/f noise voltage power spectral amplitude ratio as
Information parameter, using resistance value drift value as irradiation behaviour parameter, sets up multiple linear regression equations, and calculate linear regression side
Coefficient vector in journey；
Lossless screening regression prediction equation sets up unit 450, for based on coefficient vector, setting up information parameter, 1/f noise
Lossless screening regression prediction equation between voltage power spectral amplitude ratio and irradiation behaviour parameter；
Test cell 460, the anti-radiation performance for predicting single resistance device, to being carried out with batch other resistor device regions
Screening.
It is apparent to those skilled in the art that, for convenience and simplicity of description, the system of foregoing description
Specific work process, may be referred to the corresponding process in preceding method embodiment, will not be repeated here.
If the function is to realize in the form of SFU software functional unit and as independent production marketing or when using, can be with
Storage is in a computer read/write memory medium.Based on such understanding, technical scheme is substantially in other words
The part contributed to prior art or the part of the technical scheme can be embodied in the form of software product, the meter
Calculation machine software product is stored in a storage medium, including some instructions are used to so that a computer equipment (can be individual
People's computer, server, or network equipment etc.) perform all or part of step of each embodiment methods described of the invention.
And foregoing storage medium includes：USB flash disk, mobile hard disk, read-only storage (ROM, Read-Only Memory), arbitrary access are deposited
Reservoir (RAM, Random Access Memory), magnetic disc or CD etc. are various can be with the medium of store program codes.
The above, specific embodiment only of the invention, but protection scope of the present invention is not limited thereto, and it is any
Those familiar with the art the invention discloses technical scope in, change or replacement can be readily occurred in, should all contain
Cover within protection scope of the present invention.Therefore, protection scope of the present invention described should be defined by scope of the claims.
Claims (4)
1. a kind of lossless screening technique of resistor Radiation hardness, it is characterised in that including：
Obtain the resistance value and 1/f noise voltage power spectral amplitude ratio as the resistor predose of random increment；
The resistor as random increment is obtained by the resistance value after irradiation；
The resistance value of the resistor based on predose and the resistance value by the resistor after irradiation, calculate the resistance after predose
Value drift amount；
Data are pre-processed, using the 1/f noise voltage power spectral amplitude ratio as information parameter, with the resistance value drift
Amount sets up multiple linear regression equations, and calculate the coefficient vector in equation of linear regression as irradiation behaviour parameter；
Based on the coefficient vector, the lossless screening regression forecasting side set up between described information parameter and irradiation behaviour parameter
Journey；
Using the lossless screening regression prediction equation, the anti-radiation performance of single resistance device is predicted, to batch other resistance
Device device is screened.
2. a kind of lossless screening technique of resistor Radiation hardness according to claim 1, it is characterised in that the acquisition
The 1/f noise voltage power spectral amplitude ratio of random increment resistor includes：
The bias current at resistor two ends is set；
Noise signal is drawn in resistor output end；
Preposition amplification is carried out to the noise signal, preamplification signal is obtained；
The preamplification signal is gathered, 1/f noise voltage power spectral amplitude ratio is calculated.
3. a kind of lossless screening technique of resistor Radiation hardness according to claim 1, it is characterised in that the utilization
The lossless screening regression prediction equation, tests the anti-radiation performance of single resistor, to being screened with batch resistor, wraps
Include：
Obtain the resistance value and low-frequency noise amplitude of resistor to be screened；
Based on the resistance value and low-frequency noise amplitude, using the regression prediction equation, the resistance value drift of this resistor is obtained
Shifting amount predicted value；
The resistance drift tolerance limit of the resistance value drift value predicted value and this batch of resistor is compared, if the predicted value
Within the resistance value drift tolerance limit of this quasi-resistance device, then it is assumed that this resistor is qualified products；, whereas if the predicted value
Not within the resistance value drift tolerance limit of this quasi-resistance device, then it is assumed that this resistor is substandard product.
4. a kind of lossless screening plant of resistor Radiation hardness, it is characterised in that including：
First acquisition unit, for obtaining as the resistance value and 1/f noise voltage power of the resistor predose of random increment
Spectral amplitude ratio；
Second acquisition unit, for obtaining the resistor as random increment by the resistance value after irradiation；
Computing unit, the resistance value for the resistor based on predose and the resistance value by the resistor after irradiation, calculate
Resistance value drift value after predose；
Equation of linear regression sets up unit, and data are pre-processed, using the 1/f noise voltage power spectral amplitude ratio as information
Parameter, using the resistance value drift value as irradiation behaviour parameter, sets up multiple linear regression equations, and calculate linear regression side
Coefficient vector in journey；
Lossless screening regression prediction equation sets up unit, is made an uproar for based on the coefficient vector, setting up described information parameter, 1/f
Lossless screening regression prediction equation between psophometric voltage power spectral amplitude ratio and irradiation behaviour parameter；
Test cell, the anti-radiation performance for predicting single resistance device, to being screened with batch other resistor device regions.
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| CN109115375A (en) * | 2018-10-22 | 2019-01-01 | 中国振华集团云科电子有限公司 | A kind of screening technique and screening system of thermistor |
| CN110929468A (en) * | 2019-11-14 | 2020-03-27 | 北京大学 | Characterization method and application of single-particle irradiation-induced fluctuation |
| CN117289105A (en) * | 2023-11-21 | 2023-12-26 | 广东仁懋电子有限公司 | Method and system for testing irradiation resistance of super junction power MOS device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109115375A (en) * | 2018-10-22 | 2019-01-01 | 中国振华集团云科电子有限公司 | A kind of screening technique and screening system of thermistor |
| CN109115375B (en) * | 2018-10-22 | 2020-04-28 | 中国振华集团云科电子有限公司 | Screening method and screening system of thermistor |
| CN110929468A (en) * | 2019-11-14 | 2020-03-27 | 北京大学 | Characterization method and application of single-particle irradiation-induced fluctuation |
| CN117289105A (en) * | 2023-11-21 | 2023-12-26 | 广东仁懋电子有限公司 | Method and system for testing irradiation resistance of super junction power MOS device |
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