CN106768463B - A kind of luminous diode temperature alarm based on phase-change material - Google Patents
A kind of luminous diode temperature alarm based on phase-change material Download PDFInfo
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- CN106768463B CN106768463B CN201611191931.XA CN201611191931A CN106768463B CN 106768463 B CN106768463 B CN 106768463B CN 201611191931 A CN201611191931 A CN 201611191931A CN 106768463 B CN106768463 B CN 106768463B
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- alarm
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- 239000012782 phase change material Substances 0.000 title claims abstract description 32
- 230000007423 decrease Effects 0.000 claims abstract description 12
- 238000005538 encapsulation Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 10
- 230000007704 transition Effects 0.000 claims abstract description 9
- 230000009466 transformation Effects 0.000 claims abstract description 8
- 239000003822 epoxy resin Substances 0.000 claims abstract description 5
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 5
- 230000003760 hair shine Effects 0.000 claims abstract description 4
- 206010037660 Pyrexia Diseases 0.000 claims abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000000741 silica gel Substances 0.000 claims abstract description 3
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 3
- 230000008646 thermal stress Effects 0.000 claims abstract description 3
- 239000000565 sealant Substances 0.000 claims abstract 2
- 241000218202 Coptis Species 0.000 claims description 16
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 16
- 239000012071 phase Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 7
- 239000012188 paraffin wax Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 230000035772 mutation Effects 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000035882 stress Effects 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 230000005484 gravity Effects 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 239000007791 liquid phase Substances 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 239000012780 transparent material Substances 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims 1
- 238000006467 substitution reaction Methods 0.000 claims 1
- 230000002277 temperature effect Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 4
- 238000012423 maintenance Methods 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 241001465382 Physalis alkekengi Species 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
- G01K11/06—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using melting, freezing, or softening
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/02—Means for indicating or recording specially adapted for thermometers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to a kind of luminous diode temperature alarm based on phase-change material.In the encapsulation process of conventional light emitting diodes, the a part of phase-change material as encapsulation is added, select epoxy resin or silica gel as sealant, obtain the encapsulating structure that phase-change material is directly contacted with LED chip, the fever of LED chip or the temperature of external environment increase, so that partial phase change material reaches fusing point and undergoes phase transition, the thermal stress of generation is sharply expanded when phase transformation, make the connection line offset of chip and encapsulating structure cause LED breaking, reaches electric current disconnection and the warning effect stopped that shines in certain temperature.The decline of chip temperature or the decline of ambient temperature after LED open circuit, so that chip is contacted with chip top electrode again with the connecting line of encapsulating structure, LED conducting, so that alarm is eliminated automatically.Such alarm is low in cost, and structure is simply, it can be achieved that the accurate alarm of a certain temperature spot or temperature section to LED chip or external environment.
Description
Technical field
The present invention relates to the technical field of light emitting diode and alarm, and in particular to a kind of luminous two based on phase-change material
Pole pipe temperature alarm.
Background technique
Currently, LED using more and more extensive, it is also just more and more general for daily indoor and outdoor lighting LED lamp
And.Current LED illumination increasingly develops towards high-power direction, and great power LED bring high heat is that puzzlement LED is universal
One key factor.If LED works at high temperature for a long time, the service life can be greatly shortened, and produced dead lamp phenomenon, led to lamps and lanterns
It scraps.If alarm signal can be issued automatically in overtemperature, maintenance personal is reminded to take corresponding maintenance operation or energy in time
Power-off prevents from overheating, and can extend the service life of LED module.
Phase-change material phase-change material PCMs (Phase Change Materials) refers in certain narrow specific temperature
Range can change physical state in that is, usually said phase transformation range, is such as liquid from Solid State Transformation or becomes solid from liquid
The material [1] of state.In phase transition process, volume change very little, heat content is high, therefore is absorbed or released from ambient enviroment in the form of latent heat
Amplification quantity heat, hot uptake or burst size are more much greater than general heating and cooling procedure (sensible heat form), and at this time
The temperature of PCMs remains unchanged or constant.
It yet there are no report using application of the performance of phase-change material in the overheating protection and temperature alarm of light emitting diode
Road.
Summary of the invention
In view of the deficienciess of the prior art, the invention proposes a kind of luminous diode temperature report based on phase-change material
Alert device.In the encapsulation process of conventional light emitting diodes, a part of phase-change material as encapsulation joined, when phase-change material reaches
It is undergone phase transition to fusing point, so that electric current disconnection and the warning effect stopped that shines in certain temperature.The alarm is low in cost,
Structure is simply, it can be achieved that the accurate alarm of a certain temperature spot or temperature section to LED chip or external environment.
A kind of luminous diode temperature alarm based on phase-change material of the present invention, specifically: in Conventional luminescent
In the encapsulation process of diode, a part of phase-change material as encapsulation joined, and select epoxy resin or silica gel as close
Agent is sealed, the encapsulating structure that phase-change material is directly contacted with LED chip, the fever of LED chip or the temperature liter of external environment are obtained
Height fusing point and is undergone phase transition so that partial phase change material reaches, and when phase transformation sharply expands the thermal stress of generation, makes chip and encapsulation
The connection line offset of structure causes LED breaking, has reached electric current disconnection and the warning effect stopped that shines in certain temperature.
LED open circuit after the decline of chip temperature or the decline of ambient temperature so that the connecting line of chip and encapsulating structure again with
The contact of chip top electrode, LED conducting, so that alarm is eliminated automatically.
The phase-change material is electric insulation, and solid-liquid phase change fusing point thermally expands system at 30~200 DEG C, phase transformation greatly,
It is almost transparent material under liquid.
Alarm temperature can be adjusted by selecting the phase-change material of different melting points, if phase-change material fusing point is T0, observe and predict police
Temperature is generally between T0-10 DEG C to T0+5 DEG C.
Alarm signal can be the mutation of current signal, and after reaching alarm temperature, electric current becomes 0;Alarm signal can also
To be the mutation of optical signal, after reaching alarm temperature, the luminous stopping of LED;Alarm signal also can connect LED, to LED
Electricity and optical signal sensing external devices signal.
The connecting line of chip and encapsulating structure can be the conductor material of the LED encapsulation such as gold thread, aluminum steel, copper wire.
The positive and negative electrode of LED chip welds together after can be ball bonding or pressure welding with connecting wire, is also possible to and core
The electrode of on piece simply contacts, as long as partial phase change material is undergone phase transition, the stress of thermal expansion make enough connecting wire with
The electrode offset of LED chip.
Chip temperature decline or the decline of ambient temperature after LED chip open circuit, so that temperature becomes material shrinkage and combination
The connecting line of gravity factor, chip and encapsulating structure can decline in 1~10 DEG C again in LED chip temperature or ambient temperature
Connection, restores the energization of LED chip.
Alarm of the present invention is low in cost, and structure is simple, it can be achieved that a certain temperature to LED chip or external environment
The accurate alarm of degree point or temperature section.
Detailed description of the invention
Fig. 1-3 is gold ball bonding termination process.
Fig. 1: wherein an electrode first is welded on bracket pin, cuts after pulling out certain length gold thread, another electrode is normal
Welding
Fig. 2: it strikes sparks to gold thread and burns ball
Fig. 3: gold goal moves on to chip electrode
Fig. 4 is to cover LED chip with atoleine
Fig. 5 is the LED sample that solid paraffin is covered in LED chip
Fig. 6 is the LED sample injected after epoxy resin cure
Interior change when Fig. 7 undergoes phase transition for phase-change material
Fig. 8 is junction temperature-time graph of sample under 300mA electric current.
Specific embodiment
Below in conjunction with attached drawing, embodiments of the present invention will be described.
1. as shown in Figure 1-3, wherein an electrode first is welded on bracket pin, pulling certain distance when gold ball bonding
Gold thread is simultaneously cut, to gold thread cut end manually strike sparks burning ball it is primary, the gold goal being fired into is moved on the solder joint of chip, it is another
Pole normal weld.
2. paraffin is used to fix movable gold thread using stationary fixture such as Fig. 4-6 as phase-change material, heating paraffin at
By instilling chip with punch die with slower speed after liquid, a hemispherical solid is eventually formed.It loads onto mould item and instills ring
Oxygen resin demoulds after standing two hours, then stands 24 hours.
3. chip temperature increases when LED is worked normally, 49 degree of front and backs of melting point of paraffin wax are increased to, paraffin is undergone phase transition,
The stress that thermal expansion generates makes the electrode of gold thread disengaging LED, as shown in fig. 7, then LED starts open circuit, when chip temperature drops to
To a certain degree, gold thread and LED electrode reconnect, and form conducting, and LED chip temperature rises again, reach alarm temperature, gold thread
It is detached from again, LED open circuit;The above process may be repeated, and realize the automatic alarm to some temperature section and recovery.
4. realizing that effect is as shown in Figure 8.Fig. 8 is the interface that voltage signal is converted into LED chip using forward voltage method
Temperature, it can be seen that the junction temperature of LED chip reaches 41 degree or so, and LED chip is by auto-cutout, when junction temperature decline, LED chip
It will be connected automatically, and realize and restore.In this case, realize that the temperature of alarm is 41 degree, it is 8 degree low to become material paraffin melting point than temperature.
Specific embodiments of the present invention are described above.It is to be appreciated that the invention is not limited to above-mentioned
Particular implementation, those skilled in the art can make various deformations or amendments within the scope of the claims, this not shadow
Ring substantive content of the invention.
Claims (7)
1. a kind of luminous diode temperature alarm based on phase-change material, it is characterised in that: in the envelope of conventional light emitting diodes
During dress, a part of phase-change material as encapsulation joined, and select epoxy resin or silica gel as sealant, obtain phase
Become the encapsulating structure that material is directly contacted with LED chip, specific encapsulation process are as follows: when gold ball bonding, wherein an electrode first welds
Connect on bracket pin, pull certain distance gold thread simultaneously cut, to gold thread cut end manually strike sparks burning ball it is primary, by what is be fired into
Gold goal is moved on the solder joint of chip, another pole normal weld;Movable gold thread is fixed using stationary fixture, heating paraffin is at liquid
By instilling chip with punch die with slower speed after body, a hemispherical solid is eventually formed, mould item is loaded onto and instills epoxy
Resin demoulds after standing two hours, then stands 24 hours;When LED is worked normally, the fever or external environment of LED chip
Temperature increase fusing point and undergone phase transition so that partial phase change material reaches, when phase transformation sharply expands the thermal stress of generation, makes core
The offset of the gold thread of piece and encapsulating structure causes LED breaking, has reached electric current disconnection and the alarm stopped that shines in certain temperature
Effect, the decline of chip temperature or the decline of ambient temperature after LED open circuit, so that the gold thread of chip and encapsulating structure is again
It is contacted with chip top electrode, LED conducting, so that alarm is eliminated automatically.
2. temperature alarm according to claim 1, it is characterised in that: the phase-change material is electric insulation, solid-liquid
Phase transformation fusing point thermally expands system at 30~200 DEG C, phase transformation greatly, in the liquid state almost transparent material.
3. temperature alarm according to claim 1, it is characterised in that: alarm temperature can pass through the phase of selection different melting points
Become material to adjust, when phase-change material fusing point is T0, alarm temperature is surveyed generally in T0- 10 DEG C are arrived T0Between+5 DEG C.
4. temperature alarm according to claim 1, it is characterised in that: alarm signal is the mutation of current signal, is reached
After alarm temperature, electric current becomes 0;Or alarm signal is the mutation of optical signal, and after reaching alarm temperature, the luminous stopping of LED;Or
Alarm signal connects LED's, the signal of the external devices of electricity and optical signal sensing to LED.
5. temperature alarm according to claim 1, it is characterised in that: the gold thread of chip and encapsulating structure can be by aluminium
Line, copper wire substitution.
6. temperature alarm according to claim 1, it is characterised in that: the positive and negative electrode and connecting wire ball of LED chip
Weld together after weldering or pressure welding, or is simply contacted with the electrode on chip, as long as partial phase change material is undergone phase transition, heat
The stress of expansion makes the electrode offset of connecting wire and LED chip enough.
7. temperature alarm according to claim 1, it is characterised in that: chip temperature declines after LED chip open circuit, or outer
The decline of portion's environment temperature, so that temperature becomes material shrinkage and combines gravity factor, the gold thread of chip and encapsulating structure can be in LED core
Piece temperature or ambient temperature decline to be reconnected in 1~10 DEG C, restores the energization of LED chip.
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CN201611191931.XA CN106768463B (en) | 2016-12-21 | 2016-12-21 | A kind of luminous diode temperature alarm based on phase-change material |
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CN201611191931.XA CN106768463B (en) | 2016-12-21 | 2016-12-21 | A kind of luminous diode temperature alarm based on phase-change material |
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CN106768463B true CN106768463B (en) | 2019-08-09 |
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CN108151891A (en) * | 2017-12-22 | 2018-06-12 | 谢涛 | Trigger system in a kind of equipment alarm internet |
CN109979146A (en) * | 2019-04-17 | 2019-07-05 | 宋天诣 | A kind of high temperature safe prior-warning device using solid conductive material fusing point fixed characteristic |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN202719457U (en) * | 2012-09-10 | 2013-02-06 | 惠州市西顿工业发展有限公司 | Light emitting diode (LED) bulb lamp |
CN102968876A (en) * | 2012-11-30 | 2013-03-13 | 大连隆星新材料有限公司 | Paraffin fire alarm device |
CN103762296A (en) * | 2014-01-08 | 2014-04-30 | 广东工业大学 | Light emitting diode encapsulating structure |
CN104235800A (en) * | 2014-09-15 | 2014-12-24 | 西安交通大学 | Phase change temperature control device for intermittent high-power LED (light-emitting diode) |
CN104235801A (en) * | 2014-09-15 | 2014-12-24 | 西安交通大学 | High-power LED (Light Emitting Diode) phase-change temperature control device with heat pipes |
CN105864044A (en) * | 2016-05-17 | 2016-08-17 | 邢绍校 | Temperature control device for air compressor |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US20100032702A1 (en) * | 2008-08-11 | 2010-02-11 | E. I. Du Pont De Nemours And Company | Light-Emitting Diode Housing Comprising Fluoropolymer |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN202719457U (en) * | 2012-09-10 | 2013-02-06 | 惠州市西顿工业发展有限公司 | Light emitting diode (LED) bulb lamp |
CN102968876A (en) * | 2012-11-30 | 2013-03-13 | 大连隆星新材料有限公司 | Paraffin fire alarm device |
CN103762296A (en) * | 2014-01-08 | 2014-04-30 | 广东工业大学 | Light emitting diode encapsulating structure |
CN104235800A (en) * | 2014-09-15 | 2014-12-24 | 西安交通大学 | Phase change temperature control device for intermittent high-power LED (light-emitting diode) |
CN104235801A (en) * | 2014-09-15 | 2014-12-24 | 西安交通大学 | High-power LED (Light Emitting Diode) phase-change temperature control device with heat pipes |
CN105864044A (en) * | 2016-05-17 | 2016-08-17 | 邢绍校 | Temperature control device for air compressor |
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