CN102085589A - Method for welding LED chip and backing plate - Google Patents
Method for welding LED chip and backing plate Download PDFInfo
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- CN102085589A CN102085589A CN2010105308561A CN201010530856A CN102085589A CN 102085589 A CN102085589 A CN 102085589A CN 2010105308561 A CN2010105308561 A CN 2010105308561A CN 201010530856 A CN201010530856 A CN 201010530856A CN 102085589 A CN102085589 A CN 102085589A
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- led chip
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Abstract
The invention discloses a method for welding a light-emitting diode (LED) chip and a backing plate. In the method, a self-reacting Al-Ni membrane is used as brazing filler metal; and after the LED chip, the self-reacting Al-Ni membrane and the backing plate are stacked sequentially, the self-reacting Al-Ni membrane is ignited to be subjected to self-reaction, so that the self-reacting Al-Ni membrane is subjected to quick self-fluxing to realize welding. By the method, the bond strength of the LED chip and the backing plate is improved, a process is simplified, the cost is saved, and the LED chip can be prevented from being damaged due to heating.
Description
Technical field
The present invention relates to LED encapsulation technology field, relate in particular to the welding method of a kind of led chip and backboard.
Background technology
Light emitting diode (LED, Light Emitting Diode) is a kind of semiconductor solid luminescence device, and it utilizes semiconductor PN as luminescent material, can directly electricity be converted to light.After the two ends of semiconductor PN add forward voltage, inject the minority carrier of PN junction and majority carrier and take place compoundly, emit superfluous energy and cause photo emissions, directly send the light that color is red, orange, yellow, green, blue, blue, purple.Led light source since have high energy-conservation, the life-span long, be beneficial to advantage such as environmental protection, and becomes the focus of present research, be widely used in the lighting, and be considered to light source of future generation.
According to the size that power is provided, LED can be divided into great power LED and low-power LED.As a rule, the rated current of low-power LED all is 200mA; The LED that rated current is higher than 200mA can be regarded as great power LED basically.
The high-power LED chip that is used to throw light in use will produce a large amount of heats, as untimely heat be shed, and can't obtain stable light output, and can have a strong impact on the service life of led chip.In order to prolong the service life of led chip, led chip need be encapsulated on the backboard usually, by backboard the heat that led chip in use produces is shed.And in order to improve the heat dispersion of backboard, the metal or alloy that adopts good heat conductivity usually is as backboard, for example aluminium backboard, aluminum alloy back plate and copper backboard etc.In the led chip encapsulation process, the back side of led chip need be welded on the backboard.
Yet,,, still can influence the heat radiation of led chip if be connected inappropriate technology between led chip and the backboard even adopted the backboard that conducts electricity very well.
At present, viscose glue technology or soldering tech are generally adopted in the back side of led chip and the welding between the backboard.So-called viscose glue technology is meant the employing binding material, and for example conducting resinl or silver slurry bond the back side and the backboard of led chip fixing.Yet there is following shortcoming in the viscose glue technology:
1) adhesion strength is not high, causes led chip to come off from backboard easily;
2) heat conductivility of binding material is poor, impacts for the heat radiation of led chip;
3) heatproof of binding material is usually about 70 ℃, and led chip temperature in use may be higher than 70 ℃, thereby causes binding material to melt, and causes led chip to come off from backboard.
So-called soldering tech, be meant between two kinds of materials to be welded (mother metal) and fill braze metal, utilize the fusing point characteristics lower of the braze metal of filling than mother metal, mother metal and braze metal be heated to above the braze metal fusing point and be lower than the temperature of mother metal fusing point, make braze metal form liquid state, utilize the wetting mother metal of liquid solder, fill the gap on two kinds of mother metal composition surfaces, and with mother metal counterdiffusion mutually, realize to connect a kind of method of two kinds of mother metals.And existing braze metal is generally tin, adopts tin to be commonly referred to the tin soldering as the soldering of braze metal.Yet there is following shortcoming in the tin soldering:
1) needs special-purpose heating platform and sealing wire, cause complex process;
2) the tin soldering need be heated to suitable temperature, and keeps suitable weld interval, makes chip easy heat damage in welding process;
3) the tin soldering needs to carry out under the nitrogen protection environment, prevents the mother metal oxidation.
Therefore, be necessary the welding method of existing led chip and backboard is improved.
Summary of the invention
The object of the present invention is to provide the welding method of a kind of led chip and backboard,, and avoid damaging led chip with the bond strength of raising led chip and backboard.
For addressing the above problem, the present invention proposes the welding method of a kind of led chip and backboard, utilizes soldering processes to connect led chip and backboard, and the braze metal that described soldering processes adopt is an autoreaction Al-Ni film.
Optionally, described autoreaction Al-Ni film is nanometer laminated structure.
Optionally, the thickness of described autoreaction Al-Ni film is 0.05～0.2mm.
Optionally, the material of described backboard is an aluminium alloy.
Simultaneously, for addressing the above problem, the present invention proposes the welding method of a kind of led chip and backboard, utilizes soldering processes to connect led chip and backboard, and this method comprises the steps:
Led chip, backboard and autoreaction Al-Ni film are provided;
Described led chip, autoreaction Al-Ni film and backboard are stacked successively;
With described autoreaction Al-Ni film igniting, make described autoreaction Al-Ni film produce autoreaction, realize welding.
Optionally, described autoreaction Al-Ni film is nanometer laminated structure.
Optionally, the thickness of described autoreaction Al-Ni film is 0.05～0.2mm.
Optionally, described implementation method with autoreaction Al-Ni film igniting is electric pulse or light source irradiation or direct local heat.
Optionally, the material of described backboard is an aluminium alloy.
The present invention makes it compared with prior art owing to adopt above technical scheme, has following advantage and good effect:
1) compares with existing viscose glue technology, adopt the welding method of led chip provided by the invention and backboard, can greatly improve the bond strength of led chip and backboard;
2) compare with existing viscose glue technology, the heatproof of autoreaction Al-Ni film provided by the invention can surpass 120 ℃, and led chip comes off from backboard thereby can avoid in use;
3) compare the good heat conductivity of autoreaction Al-Ni film provided by the invention with existing viscose glue technology;
4) compare with existing tin soldering tech, the welding method of led chip provided by the invention and backboard does not need special-purpose heating platform and sealing wire, has simplified technology;
5) compare with existing tin soldering tech, the welding method of led chip provided by the invention and backboard can directly be carried out under air ambient, does not need nitrogen protection, has saved cost;
6) compare with existing tin soldering tech, the welding method of led chip provided by the invention and backboard adopts autoreaction Al-Ni as braze metal, described autoreaction Al-Ni realizes fast from molten by autoreaction after igniting, thereby realize welding, the time of welding only needs several seconds, avoids led chip because of heat damage;
7) compare with existing tin soldering tech, autoreaction Al-Ni provided by the invention is the film shape, makes the rate that combines of led chip and backboard greater than 99%.
Description of drawings
The flow chart of the led chip that Fig. 1 provides for the embodiment of the invention and the welding method of backboard.
The specific embodiment
Below in conjunction with the drawings and specific embodiments the led chip of the present invention's proposition and the welding method of backboard are described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only be used for conveniently, the purpose of the aid illustration embodiment of the invention lucidly.
Core concept of the present invention is, the welding method of a kind of led chip and backboard is provided, this method adopts autoreaction Al-Ni film as braze metal, and this method is by after stacking led chip, autoreaction Al-Ni film and backboard successively, with described autoreaction Al-Ni film igniting, make described autoreaction Al-Ni film produce autoreaction, realize melting certainly fast, thereby realize welding.Improve the bond strength of led chip and backboard, simplified technology, saved cost, and can avoid led chip to be subjected to fire damage.
The led chip that the embodiment of the invention provides and the welding method of backboard utilize soldering processes to connect led chip and backboard, and the braze metal that described soldering processes adopt is an autoreaction Al-Ni film.
Further, described autoreaction Al-Ni film is nanometer laminated structure, thereby can realize fast from molten.
Further, the thickness of described autoreaction Al-Ni film is 0.05～0.2mm, thereby can improve the rate that combines of led chip and backboard.
Further, the material of described backboard is an aluminium alloy, thereby helps the led chip heat radiation.
Please refer to Fig. 1, the flow chart of the led chip that Fig. 1 provides for the embodiment of the invention and the welding method of backboard, as shown in Figure 1, the led chip that the embodiment of the invention provides and the welding method of backboard, utilize soldering processes to connect led chip and backboard, this method comprises the steps:
S101, provide led chip, backboard and autoreaction Al-Ni film;
S102, described led chip, autoreaction Al-Ni film and backboard are stacked successively; Be that led chip places below, backboard places the top, and autoreaction Al-Ni film places the centre of led chip and backboard; Perhaps backboard places below, and led chip places the top, and autoreaction Al-Ni film places the centre of backboard and led chip;
S103, with the igniting of described autoreaction Al-Ni film, make described autoreaction Al-Ni film produce autoreaction, realize welding.Particularly; with described autoreaction Al-Ni film igniting; reach its fusing point, described afterwards autoreaction Al-Ni film melts by autoreaction, and in seconds realizes welding; thereby can avoid led chip because of heat damage; owing to do not need special-purpose heating platform and sealing wire in the welding process, thereby simplified technology, and welding can directly be carried out under air ambient; do not need nitrogen protection, saved cost.
Further, described autoreaction Al-Ni film is nanometer laminated structure, thereby can realize fast from molten.
Further, the thickness of described autoreaction Al-Ni film is 0.05～0.2mm, thereby can improve the rate that combines of led chip and backboard.
Further, described implementation method with the igniting of autoreaction Al-Ni film is electric pulse or light source irradiation or direct local heat.
Further, the material of described backboard is an aluminium alloy, thereby helps the led chip heat radiation.
In a specific embodiment of the present invention, the material of described backboard is an aluminium alloy, yet should be realized that, according to actual conditions, described backboard can also be other material, and for example metallic copper, metallic aluminium etc. only need the good heat conductivity of backboard to get final product.
Need to prove that led chip provided by the invention also can be used to be connected other chip and corresponding backboard with the welding method of backboard, for example Organic Light Emitting Diode (OLED, Organic Light EmittingDiode) chip and corresponding backboard.
In sum, the invention provides the welding method of a kind of led chip and backboard, this method adopts autoreaction Al-Ni film as braze metal, and this method is by after stacking led chip, autoreaction Al-Ni film and backboard successively, with described autoreaction Al-Ni film igniting, make described autoreaction Al-Ni film produce autoreaction, realize melting certainly fast, thereby realize welding.Improve the bond strength of led chip and backboard, simplified technology, saved cost, and can avoid led chip to be subjected to fire damage.
Obviously, those skilled in the art can carry out various changes and modification to invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (9)
1. the welding method of led chip and backboard utilizes soldering processes to connect led chip and backboard, it is characterized in that the braze metal that described soldering processes adopt is an autoreaction Al-Ni film.
2. the welding method of led chip as claimed in claim 1 and backboard is characterized in that, described autoreaction Al-Ni film is nanometer laminated structure.
3. the welding method of led chip as claimed in claim 1 and backboard is characterized in that, the thickness of described autoreaction Al-Ni film is 0.05～0.2mm.
4. the welding method of led chip as claimed in claim 1 and backboard is characterized in that, the material of described backboard is an aluminium alloy.
5. the welding method of led chip and backboard utilizes soldering processes to connect led chip and backboard, it is characterized in that this method comprises the steps:
Led chip, backboard and autoreaction Al-Ni film are provided;
Described led chip, autoreaction Al-Ni film and backboard are stacked successively;
With described autoreaction Al-Ni film igniting, make described autoreaction Al-Ni film produce autoreaction, realize welding.
6. the welding method of led chip as claimed in claim 5 and backboard is characterized in that, described autoreaction Al-Ni film is nanometer laminated structure.
7. the welding method of led chip as claimed in claim 5 and backboard is characterized in that, the thickness of described autoreaction Al-Ni film is 0.05～0.2mm.
8. the welding method of led chip as claimed in claim 5 and backboard is characterized in that, described implementation method with the igniting of autoreaction Al-Ni film is electric pulse or light source irradiation or direct local heat.
9. the welding method of led chip as claimed in claim 5 and backboard is characterized in that, the material of described backboard is an aluminium alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105308561A CN102085589A (en) | 2010-11-03 | 2010-11-03 | Method for welding LED chip and backing plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105308561A CN102085589A (en) | 2010-11-03 | 2010-11-03 | Method for welding LED chip and backing plate |
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| CN102085589A true CN102085589A (en) | 2011-06-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010105308561A Pending CN102085589A (en) | 2010-11-03 | 2010-11-03 | Method for welding LED chip and backing plate |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107297554A (en) * | 2016-04-15 | 2017-10-27 | 南京理工大学 | A kind of method that high-volume fractional SiCp/Al composites are connected based on nano-multilayer film self- propagating |
| CN108161270A (en) * | 2017-12-21 | 2018-06-15 | 太原理工大学 | It is a kind of to enhance Sn-Zn nanotube-solders and preparation method for the particle of low temperature bonding aluminium alloy and LED chip |
| CN110323194A (en) * | 2018-03-30 | 2019-10-11 | 比亚迪股份有限公司 | Electric machine controller and its manufacturing method, vehicle |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04187573A (en) * | 1990-11-19 | 1992-07-06 | Koizumi Mitsue | Method for soldering |
| CN1091473A (en) * | 1993-11-08 | 1994-08-31 | 武汉工业大学 | Autoreaction-fusion technology prepares metal-base composites |
| US20010046597A1 (en) * | 2000-05-02 | 2001-11-29 | Weihs Timothy P. | Reactive multilayer structures for ease of processing and enhanced ductility |
| US20020182436A1 (en) * | 2000-05-02 | 2002-12-05 | Weihs Timothy P. | Freestanding reactive multilayer foils |
-
2010
- 2010-11-03 CN CN2010105308561A patent/CN102085589A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04187573A (en) * | 1990-11-19 | 1992-07-06 | Koizumi Mitsue | Method for soldering |
| CN1091473A (en) * | 1993-11-08 | 1994-08-31 | 武汉工业大学 | Autoreaction-fusion technology prepares metal-base composites |
| US20010046597A1 (en) * | 2000-05-02 | 2001-11-29 | Weihs Timothy P. | Reactive multilayer structures for ease of processing and enhanced ductility |
| US20020182436A1 (en) * | 2000-05-02 | 2002-12-05 | Weihs Timothy P. | Freestanding reactive multilayer foils |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107297554A (en) * | 2016-04-15 | 2017-10-27 | 南京理工大学 | A kind of method that high-volume fractional SiCp/Al composites are connected based on nano-multilayer film self- propagating |
| CN107297554B (en) * | 2016-04-15 | 2019-07-12 | 南京理工大学 | A method of high-volume fractional SiCp/Al composite material is connected based on nano-multilayer film self- propagating |
| CN108161270A (en) * | 2017-12-21 | 2018-06-15 | 太原理工大学 | It is a kind of to enhance Sn-Zn nanotube-solders and preparation method for the particle of low temperature bonding aluminium alloy and LED chip |
| CN110323194A (en) * | 2018-03-30 | 2019-10-11 | 比亚迪股份有限公司 | Electric machine controller and its manufacturing method, vehicle |
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Application publication date: 20110608 |