CN106756851A - A kind of controllable heat control material of emissivity and preparation method thereof - Google Patents
A kind of controllable heat control material of emissivity and preparation method thereof Download PDFInfo
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- CN106756851A CN106756851A CN201611224549.4A CN201611224549A CN106756851A CN 106756851 A CN106756851 A CN 106756851A CN 201611224549 A CN201611224549 A CN 201611224549A CN 106756851 A CN106756851 A CN 106756851A
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- emissivity
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
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- Mechanical Engineering (AREA)
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- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
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Abstract
The invention discloses a kind of controllable heat control material of emissivity, the controllable heat control material of emissivity includes：Substrate；Alundum (Al2O3) transition zone for improving adhesive force；Silverskin for improving sun light reflectivity；Di-aluminium trioxide film for improving infrared emittance；And for the silicon dioxide layer of antireflective；Wherein, alundum (Al2O3) transition zone, silverskin, di-aluminium trioxide film and silicon dioxide layer are followed successively by from inside to outside in substrate surface.Heat control material of the present invention can realize the regulation and control of different absorption/transmitting ratios, it is capable of achieving light-weight design, there is the spacecraft controllable thermal control coating of emissivity of lightweight, miniaturization, whole magnitude temperature feature suitable for a new generation, it is with low cost, process is simple, space environment good stability, meets spacecraft surface different parts emissivity different demands and improves the requirement of the resistance to space radiation of heat control material.
Description
Technical field
The invention belongs to space material field, and in particular to a kind of controllable heat control material of emissivity and preparation method thereof.
Background technology
Spacecraft heat control material is mainly used to ensure that structure member, the instrument and equipment of spacecraft are in one under space environment
Individual suitable temperature range, make its it is various it is possible in the case of being capable of normal work.At present, existing heat control material, it is main
To include rare earth manganese oxide dopant material La1-x-yM1xM2yMnO3 and doping vanadium oxide V1-x-yMxNyO2, this two classes material
The infrared emittance of material can change its infrared emittance according to temperature change, however, the sun of this two classes heat control material is inhaled
Receive than larger, by taking La1-x-yM1xM2yMnO3 as an example, the solar absorptance on its surface is more than 0.85.In sun direct irradiation
In the case of, spacecraft temperature rise will be caused very fast, autonomous temperature control ability is inadequate, and, the solar absorptance of this two classes material is solid
Fixed, the ratio excursion of solar absorptance and infrared emittance is small, causes range of application to be limited.
CN104561897A discloses a kind of film for changing intelligent heat control material temperature control ability, and it is used by vulcanizing
In zinc, zinc selenide, silicon and germanium one or more composition first film layers with by magnesium fluoride and fluorination iridium in one kind or
Two kinds of alternately laminated compositions of the second film layer of composition, in order to before the infrared emittance of heat control material itself is as immovable as possible
Put, it is ensured that solar absorptance is small as far as possible, its coating layers need to control, at 8~14 layers, to be unfavorable for the light weight of heat control material
Change design.
The content of the invention
The technical problem to be solved in the present invention is to overcome existing defect, there is provided a kind of to be absorbed the low sun is ensured
Than in the case of, realize infrared emittance according to demand controllable heat control material of arbitrarily devised emissivity and preparation method thereof.
In order to solve the above-mentioned technical problem, the invention provides following technical scheme：
A kind of controllable heat control material of emissivity, the controllable heat control material of emissivity includes：
Substrate；
Alundum (Al2O3) transition zone for improving adhesive force；
Silverskin for improving sun light reflectivity；
Di-aluminium trioxide film for improving infrared emittance；
And for the silicon dioxide layer of antireflective；
Wherein, alundum (Al2O3) transition zone, silverskin, di-aluminium trioxide film and silica are followed successively by from inside to outside in substrate surface
Layer.
Preferably, the substrate is polyimides.
Alundum (Al2O3) transition zone is coated between substrate and metal film, the attachment for improving membrane system and substrate can be played
Power, it is preferable that the thickness of the alundum (Al2O3) transition zone is 20~80nm.
Silverskin has the low emission characteristics of high reflection, as the underlying membrane of heat control material, can play raising sun light reflectivity,
So as to reduce the solar absorptance of whole membrane system, it is preferable that the thickness of the silverskin is 100~200nm.
The thickness of the di-aluminium trioxide film by control for reducing sun luminous absorptance, improving infrared emittance regulates and controls
The thermal control performance of whole membrane system, it is preferable that the thickness of the di-aluminium trioxide film is 0.1~2 μm.
For antireflective silicon dioxide layer as outer membrane, play the mirror reflection optical energy loss for reducing film, enhancing choosing
The effect of selecting property assimilation effect, it is preferable that the thickness of the silicon dioxide layer is 0.1~0.5 μm.
The preparation method of the above-mentioned controllable heat control material of emissivity：Plated successively in substrate using pulsed dc magnetron sputtering method
Alundum (Al2O3) transition zone processed, silverskin, di-aluminium trioxide film and silicon dioxide layer.
The present invention can be reached to material emissivity by the thickness of precise control di-aluminium trioxide film and silicon dioxide layer
Precise control, so as to obtain the heat control material of different absorption/transmitting ratios, meets the thermal control requirement of spacecraft different parts.Simultaneously
Di-aluminium trioxide film and silicon dioxide layer have good resistance to elemental oxygen and resistance to space radiation performance, can keep out elemental oxygen and space
The erosion of ray, prevents the performance degradation of argentum reflecting layer and base material, improves life-span and the reliability of whole membrane system.
Beneficial effects of the present invention：
Heat control material of the present invention can realize that infrared emittance arbitrarily sets according to demand in the case where low solar absorptance is ensured
Meter, so as to realize the regulation and control of different absorption/transmitting ratios, reaches light-weight design requirement, it is adaptable to which a new generation has lightweight, small
The spacecraft controllable thermal control coating of emissivity of type, whole magnitude temperature feature, its simple structure is with low cost, and technique makes
Convenient, space environment good stability meets spacecraft surface different parts emissivity different demands and improves the resistance to sky of heat control material
Between irradiate requirement.
Brief description of the drawings
Accompanying drawing is used for providing a further understanding of the present invention, and constitutes a part for specification, with reality of the invention
Applying example is used to explain the present invention together, is not construed as limiting the invention.In the accompanying drawings：
Fig. 1 is the structural representation of the controllable heat control material of emissivity of the present invention, wherein, 1, substrate, 2, alundum (Al2O3) transition zone,
3rd, silverskin, 4, di-aluminium trioxide film, 5, silicon dioxide layer.
Specific embodiment
The preferred embodiments of the present invention are illustrated below in conjunction with accompanying drawing, it will be appreciated that preferred reality described herein
Apply example to be merely to illustrate and explain the present invention, be not intended to limit the present invention.
Embodiment 1
As shown in figure 1, a kind of controllable heat control material of emissivity, three are followed successively by flexible polyimide substrate surface from inside to outside
Al 2 O transition zone, silverskin, di-aluminium trioxide film and silicon dioxide layer.
The alundum (Al2O3) of 50nm is first prepared on flexible polyimide substrate using pulse reaction direct current magnetron sputtering process
Transition zone, then prepares the silverskin of 150nm using direct current magnetron sputtering process, finally using pulse reaction direct current magnetron sputtering process according to
The secondary di-aluminium trioxide film for preparing 2 μm and 0.5 μm of silicon dioxide layer.Final sample performance reaches：Solar absorptance 0.15, hair
Penetrate rate 0.56.
Specific operation process is as follows：
（1）Pulse reaction direct current magnetron sputtering process is coated with alundum (Al2O3) transition zone：Polyimide substrate is placed on sputtering work
Make on platform, distance is 10cm between substrate and aluminium target target, closes door for vacuum chamber.Open pumping pump group to vacuumize, when vacuum reaches
To 3 × 10-3During Pa, opening mass flowmenter passage a is filled with Ar gas, passage b and is filled with O2Gas, Ar throughputs are set to 100
Sccm, O2Throughput is set to 60 Sccm, opens pulse reaction shielding power supply 1 and starts to be coated with alundum (Al2O3) transition zone, sputters
Power 250W, time 3min.
（2）Direct current magnetron sputtering process is coated with silverskin：Alundum (Al2O3) transition zone closes pulse reaction sputtering after the completion of being coated with
Power supply 1, vacuum chamber is opened after multiple pressure, and aluminium target is replaced by into silver-colored target.Door for vacuum chamber is closed, pumping pump group is opened and is vacuumized, surely
Reciprocal of duty cycle reaches 3 × 10-3During Pa, open mass flowmenter passage a and be filled with Ar gas, Ar throughputs are set to 100 Sccm, open straight
Stream shielding power supply 2 starts to be coated with silverskin, sputtering power 300W, time 10min.
（3）Pulse reaction direct current magnetron sputtering process is coated with di-aluminium trioxide film：Silverskin closes d.c. sputtering after the completion of being coated with
Power supply 2, vacuum chamber is opened after multiple pressure, and silver-colored target is replaced by into aluminium target, closes door for vacuum chamber.Open pumping pump group to vacuumize, surely
Reciprocal of duty cycle reaches 3 × 10-3During Pa, opening mass flowmenter passage a is filled with Ar gas, passage b and is filled with O2Gas, Ar throughputs are set to
100 Sccm, O2Throughput is set to 60 Sccm, opens pulse reaction shielding power supply 1 and starts to be coated with di-aluminium trioxide film, sputters
Power 500W, time 60min.
（3）Pulse reaction direct current magnetron sputtering process is coated with silicon dioxide layer：Di-aluminium trioxide film closes arteries and veins after the completion of being coated with
Reactive sputtering power supply 1 is rushed, vacuum chamber is opened after multiple pressure, aluminium target is replaced by silicon target, close door for vacuum chamber.Pumping pump group is opened to take out
Vacuum, when vacuum reaches 3 × 10-3During Pa, opening mass flowmenter passage a is filled with Ar gas, passage b and is filled with O2Gas, Ar air-flows
Amount is set to 80 Sccm, O2Throughput is set to 50 Sccm, opens pulse reaction shielding power supply 1 and starts to be coated with silica
Layer, sputtering power 500W, time 10min.Silicon dioxide layer closes pulse reaction shielding power supply 1 after the completion of being coated with, beaten after multiple pressure
Open vacuum chamber and take out sample.
Embodiment 2
The alundum (Al2O3) transition of 20nm is first prepared on flexible polyimide substrate using pulse reaction direct current magnetron sputtering process
Layer, then prepares the silverskin of 100nm using direct current magnetron sputtering process, is finally made successively using pulse reaction direct current magnetron sputtering process
Standby 1.5 μm di-aluminium trioxide film and 0.2 μm of silicon dioxide layer.Specific operation process is sputtered referring to embodiment 1 by control
Power and time adjust the thickness of each film plating layer.Final sample performance reaches：Solar absorptance 0.13, emissivity 0.45.
Embodiment 3
The alundum (Al2O3) transition of 80nm is first prepared on flexible polyimide substrate using pulse reaction direct current magnetron sputtering process
Layer, then prepares the silverskin of 200nm using direct current magnetron sputtering process, is finally made successively using pulse reaction direct current magnetron sputtering process
Standby 1.0 μm di-aluminium trioxide film and 0.1 μm of silicon dioxide layer.Specific operation process is sputtered referring to embodiment 1 by control
Power and time adjust the thickness of each film plating layer.Final sample performance reaches：Solar absorptance 0.12, emissivity 0.34.
Embodiment 4
The alundum (Al2O3) transition of 50nm is first prepared on flexible polyimide substrate using pulse reaction direct current magnetron sputtering process
Layer, then prepares the silverskin of 150nm using direct current magnetron sputtering process, is finally made successively using pulse reaction direct current magnetron sputtering process
Standby 1.5 μm di-aluminium trioxide film and 0.1 μm of silicon dioxide layer.Specific operation process is sputtered referring to embodiment 1 by control
Power and time adjust the thickness of each film plating layer.Final sample performance reaches：Solar absorptance 0.14, emissivity 0.40.
Finally it should be noted that：The preferred embodiments of the present invention are the foregoing is only, are not intended to limit the invention,
Although being described in detail to the present invention with reference to the foregoing embodiments, for a person skilled in the art, it still may be used
Modified with to the technical scheme described in foregoing embodiments, or equivalent is carried out to which part technical characteristic.
All any modification, equivalent substitution and improvements within the spirit and principles in the present invention, made etc., should be included in of the invention
Within protection domain.
Claims (7)
1. a kind of controllable heat control material of emissivity, the controllable heat control material of emissivity includes：
Substrate；
Alundum (Al2O3) transition zone for improving adhesive force；
Silverskin for improving sun light reflectivity；
Di-aluminium trioxide film for improving infrared emittance；
And for the silicon dioxide layer of antireflective；
Wherein, alundum (Al2O3) transition zone, silverskin, di-aluminium trioxide film and silica are followed successively by from inside to outside in substrate surface
Layer.
2. the controllable heat control material of emissivity according to claim 1, it is characterised in that：The substrate is polyimides.
3. the controllable heat control material of emissivity according to claim 1, it is characterised in that：The alundum (Al2O3) transition zone
Thickness is 20~80nm.
4. the controllable heat control material of emissivity according to claim 1, it is characterised in that：The thickness of the silverskin be 100~
200nm。
5. the controllable heat control material of emissivity according to claim 1, it is characterised in that：The thickness of the di-aluminium trioxide film
It is 0.1~2 μm.
6. the controllable heat control material of emissivity according to claim 1, it is characterised in that：The thickness of the silicon dioxide layer is
0.1~0.5 μm.
7. the method for preparing any described controllable heat control materials of emissivity of claim 1-6, it is characterised in that：
Alundum (Al2O3) transition zone is first coated with substrate using pulse reaction direct current magnetron sputtering process；
Then silverskin is coated with using direct current magnetron sputtering process；
Di-aluminium trioxide film and silicon dioxide layer are finally coated with using pulse reaction direct current magnetron sputtering process successively.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109786951A (en) * | 2018-12-20 | 2019-05-21 | 兰州空间技术物理研究所 | A kind of thermoelectricity protection integrated membrane structure |
| CN110438460A (en) * | 2019-05-30 | 2019-11-12 | 兰州空间技术物理研究所 | A kind of solar absorptance and the regulatable heat controlled thin film structure of infrared emittance and its determine method |
| CN110527962A (en) * | 2019-05-30 | 2019-12-03 | 兰州空间技术物理研究所 | A kind of compound heat controlled thin film of low stress wet-heat resisting and preparation method thereof |
| CN110724933A (en) * | 2019-11-07 | 2020-01-24 | 中国电子科技集团公司第三十八研究所 | Preparation method of aluminum alloy surface thermal control coating |
| CN112859216A (en) * | 2021-01-14 | 2021-05-28 | 北京科技大学 | Multilayer thin film structure with significant directionally selective emissivity |
| CN115200410A (en) * | 2022-07-21 | 2022-10-18 | 哈尔滨工业大学 | Infrared radiation dynamic reconfigurable device and preparation method thereof |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109786951A (en) * | 2018-12-20 | 2019-05-21 | 兰州空间技术物理研究所 | A kind of thermoelectricity protection integrated membrane structure |
| CN110438460A (en) * | 2019-05-30 | 2019-11-12 | 兰州空间技术物理研究所 | A kind of solar absorptance and the regulatable heat controlled thin film structure of infrared emittance and its determine method |
| CN110527962A (en) * | 2019-05-30 | 2019-12-03 | 兰州空间技术物理研究所 | A kind of compound heat controlled thin film of low stress wet-heat resisting and preparation method thereof |
| CN110527962B (en) * | 2019-05-30 | 2021-10-08 | 兰州空间技术物理研究所 | Low-stress humidity-heat-resistant composite thermal control film and preparation method thereof |
| CN110724933A (en) * | 2019-11-07 | 2020-01-24 | 中国电子科技集团公司第三十八研究所 | Preparation method of aluminum alloy surface thermal control coating |
| CN112859216A (en) * | 2021-01-14 | 2021-05-28 | 北京科技大学 | Multilayer thin film structure with significant directionally selective emissivity |
| CN115200410A (en) * | 2022-07-21 | 2022-10-18 | 哈尔滨工业大学 | Infrared radiation dynamic reconfigurable device and preparation method thereof |
| CN115200410B (en) * | 2022-07-21 | 2024-02-20 | 哈尔滨工业大学 | Infrared radiation dynamic reconfigurable device and preparation method thereof |
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Application publication date: 20170531 |