CN110724933A - Preparation method of aluminum alloy surface thermal control coating - Google Patents
Preparation method of aluminum alloy surface thermal control coating Download PDFInfo
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- CN110724933A CN110724933A CN201911081013.5A CN201911081013A CN110724933A CN 110724933 A CN110724933 A CN 110724933A CN 201911081013 A CN201911081013 A CN 201911081013A CN 110724933 A CN110724933 A CN 110724933A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
Abstract
The invention discloses a preparation method of an aluminum alloy surface thermal control coating, which relates to the technical field of aerospace application and comprises the following steps: (1) polishing and pre-treating the surface of the aluminum alloy; (2) plating an oxide layer: placing the treated aluminum alloy into atomic layer equipment for plating an oxide layer, wherein the atomic layer deposition equipment has the following process parameters: the flow rate of the carrier gas is 100sccm-300sccm, the reaction temperature is 50-300 ℃, and the deposition of the oxide layer adopts a pulse cycle reaction mode, wherein the cycle times are 1-500. The invention has the beneficial effects that: the preparation of a series of high-precision thermal control coatings with the hemispherical emissivity of 0.04-0.85 on the surface of the aluminum alloy can be realized by adopting an atomic layer deposition method according to the corresponding relation of an oxide layer material, the plating thickness and the hemispherical emissivity.
Description
Technical Field
The invention relates to the technical field of aerospace application, in particular to a preparation method of an aluminum alloy surface thermal control coating.
Background
With the development of the functional requirements of the spacecraft, the thermal control coating on the surfaces of the spacecraft and related equipment develops towards accurate temperature control, long service life and high performance. Aiming at different space environments and spacecraft index requirements, the controllable coating also needs to flexibly change the thermal control performance.
The conventional processed surface hemispherical emissivity of the 3A21 aluminum alloy without the thermal control coating is below 0.10. Under the condition of vertical irradiation of the sun, the surface temperature of the spacecraft can be rapidly increased, and in order to maintain the stable working temperature level of the surface of the spacecraft and internal instruments and equipment under the space environment, a thermal control coating must be added on the surface of the spacecraft.
At present, the thermal control coating prepared by methods such as organic white paint, OSR, flexible thermal control coating, aluminum alloy anodic oxidation and the like used in China can only meet the requirements of low solar absorptivity and high hemispherical emissivity; a chemical oxidation method is adopted on a certain type of satellite in China, thermal control development of a crack waveguide antenna is carried out, the emissivity of the obtained coating hemisphere is low and ranges from 0.12 to 0.13, but accurate control and adjustment of the emissivity of the thermal control coating hemisphere cannot be realized.
The aluminum alloy anodic oxidation thermal control coating is a layer of inorganic coating material grown in situ on the surface of the substrate by an electrochemical method, has high bonding strength with the substrate and stable spatial performance, and is developed on a plurality of satellite products in China, the solar absorptivity of the aluminum alloy anodic oxidation thermal control coating is 0.30-0.40, and the hemispherical emissivity is 0.6-0.7.
The patent with the application number of 201610522383.8 discloses a preparation method of a thermal control coating with low emissivity and low specific absorption ratio, which adopts electrochemical oxidation and conventional hot pure water hole sealing treatment to obtain the thermal control coating with high precision and low emissivity/low specific absorption ratio, the hemispherical emissivity of the thermal control coating is 0.32 +/-0.02, but the accurate control and adjustment of the hemispherical emissivity of the thermal control coating cannot be realized, and the requirements of thermal control performance on the surface environment of aluminum alloy on different spacecrafts are complex, and the spatial thermal control problems such as difference exist.
Disclosure of Invention
The invention aims to provide a preparation method of a thermal control coating on the surface of an aluminum alloy, which realizes the accurate control and adjustment of the emissivity of different hemispheres of the thermal control coating by controlling the parameters of an atomic layer deposition process.
The invention solves the technical problems through the following technical means:
a preparation method of an aluminum alloy surface thermal control coating comprises the following steps:
(1) and (3) aluminum alloy surface polishing treatment: polishing the surface of the aluminum alloy by adopting a mechanical grinding mode;
(2) plating an oxide layer: placing the treated aluminum alloy into atomic layer equipment for plating an oxide layer, wherein the atomic layer deposition equipment has the following process parameters: the flow rate of the carrier gas is 100sccm-300sccm, the reaction temperature is 50-300 ℃, and the deposition of the oxide layer adopts a pulse cycle reaction mode, wherein the cycle times are 1-500.
Has the advantages that: the preparation of a series of high-precision thermal control coatings with the hemispherical emissivity of 0.04-0.85 on the surface of the aluminum alloy can be realized by adopting an atomic layer deposition method according to the corresponding relation of an oxide layer material, the plating thickness and the hemispherical emissivity.
Preferably, the roughness of the surface of the aluminum alloy in the step (1) before and after polishing is 0.04-0.14.
Preferably, the oxide layer is an aluminum oxide layer or a silicon oxide layer.
Preferably, the precursor of the silicon oxide is diisopropylaminosilane.
Preferably, the precursor of the alumina is trimethylaluminum.
Preferably, the reaction oxygen source for the deposition of the oxide layer in the step (2) is ultrapure water or oxygen.
Preferably, the carrier gas is nitrogen.
Preferably, the oxide layer is aluminum oxide, trimethylaluminum is used as an aluminum source, nitrogen is used as a carrier gas, the flow rate of the carrier gas is 100sccm, ultrapure water is used as a reaction oxygen source, the reaction temperature is 50 ℃, and the cycle time is 50 times.
Preferably, the oxide layer is aluminum oxide, trimethylaluminum is used as an aluminum source, nitrogen is used as a carrier gas, the flow rate of the carrier gas is 100sccm, ultrapure water is used as a reaction oxygen source, the reaction temperature is 50 ℃, and the cycle number is 250 times.
Preferably, the oxide layer is aluminum oxide, trimethylaluminum is used as an aluminum source, nitrogen is used as a carrier gas, the flow rate of the carrier gas is 200sccm, oxygen is used as a reaction oxygen source, the reaction temperature is 200 ℃, and the cycle number is 500 times.
Preferably, the oxide layer is silicon oxide, diisopropylaminosilane is used as a silicon source, nitrogen is used as a carrier gas, the flow rate of the carrier gas is 300sccm, oxygen is used as a reaction oxygen source, the reaction temperature is 250 ℃, and the cycle number is 300.
The invention has the advantages that:
(1) according to the invention, the aluminum alloy test piece can realize the preparation of a series of high-precision thermal control coatings with the hemispherical emissivity of 0.04-0.85 on the surface of the aluminum alloy according to the corresponding relation of the oxide layer material, the plating thickness and the hemispherical emissivity by adopting an atomic layer deposition method;
(2) the hemispherical emissivity of the aluminum alloy plated aluminum oxide layer and the thickness of the aluminum oxide layer have a certain change rule, and the hemispherical emissivity is gradually increased along with the increase of the thickness of the aluminum oxide layer on the surface; when the thickness of the aluminum oxide layer is less than 5 mu m, the thickness of the aluminum oxide layer tends to increase in a film thickness increasing stage, and the emissivity rises quickly; when the thickness of the alumina layer is more than 5 μm, the hemispherical emissivity of the alumina layer gradually tends to be stable, and the hemispherical emissivity slowly rises;
(3) the hemispherical emissivity of the aluminum alloy plated silicon dioxide layer and the thickness of the oxide film have a certain change rule, and the hemispherical emissivity is gradually increased along with the increase of the thickness of the surface silicon dioxide layer; when the thickness of the silicon dioxide layer is larger than 1.4 μm, the hemispherical emissivity of the silicon dioxide layer gradually tends to be stable, and the hemispherical emissivity slowly rises;
(4) coating uniformity: the electrochemical oxidation method is influenced by factors such as equipment, solution fluidity, personnel operation and the like, so that the uniformity of the electrochemical oxidation method is general, and the atomic layer deposition method adopts a gas reaction deposition mode, so that the layer-by-layer growth of a single-layer film can be realized, and the uniformity is better;
(5) the coating thickness is accurately controlled: the atomic layer deposition method adopts a gas reaction deposition mode, and can realize the layer-by-layer growth of a single-layer film, so that the nanoscale control of the thickness of the thermal control coating can be realized by controlling the deposition cycle times;
(6) thermal control coating diversity: the thermal control coating prepared by the electrochemical oxidation method on the surface of the aluminum alloy material can only be used for preparing the aluminum oxide thermal control coating, while the atomic layer deposition method can be used for preparing different oxide thermal control coatings by changing reaction precursors;
(7) high corrosion resistance: the thermal control coating prepared by the electrochemical oxidation method on the surface of the aluminum alloy material forms a porous alumina layer, the surface of the aluminum alloy material is easy to absorb corrosive media and pollutants, and although the corrosion resistance of the aluminum alloy material can be improved by a hole sealing process, the corrosion resistance of the aluminum alloy material is greatly influenced by the hole sealing process. The oxide thermal control coating prepared by the atomic layer deposition method has compact surface, no obvious holes and good corrosion resistance.
Drawings
FIG. 1 is a surface condition of an aluminum alloy test piece not subjected to polishing treatment in example 1 of the present invention;
FIG. 2 is a surface condition of an aluminum alloy test piece after polishing treatment in example 1 of the present invention;
FIG. 3 is a photograph of a sample after preparation of a thermal control coating for an aluminum alloy test piece in example 1 of the present invention;
FIG. 4 is a graph showing the relationship between the hemispherical emissivity of the aluminum oxide layer plated on the aluminum alloy test piece and the change of the thickness of the plated film;
FIG. 5 is a graph showing the relationship between the hemispherical emissivity of a plated silicon dioxide layer of an aluminum alloy test piece and the thickness of the plated film.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Test materials, reagents and the like used in the following examples are commercially available unless otherwise specified.
The specific techniques or conditions not specified in the examples can be performed according to the techniques or conditions described in the literature in the field or according to the product specification.
The equipment and materials used in the following examples: one atomic layer deposition device; trimethylaluminum (purity 99.9999%); diisopropylaminosilane (purity 99.9999%); nitrogen (purity: 99.999%); ultrapure water (purity: 99.999%); oxygen (purity: 99.999%).
Example 1
Preparation of thermal control coating with hemispherical emissivity
(1) Polishing the surface of the 3A21 aluminum alloy to ensure that the surface of the aluminum alloy material is leveled and bright and has the roughness of 0.04; the aluminum alloy surface without polishing treatment is shown in FIG. 1, and the aluminum alloy surface after polishing treatment is shown in FIG. 2; the surface of the aluminum alloy which is not polished has obvious finish machining marks, and the surface of the aluminum alloy has no obvious machining marks after polishing.
(2) Hemispherical emissivity oxide coating
And putting the polished aluminum alloy test piece (5 pieces) into atomic layer deposition equipment for oxide layer plating. The oxide layer is aluminum oxide; trimethylaluminum (purity 99.9999%) as an aluminum source; nitrogen as a carrier gas (purity: 99.999%); carrier gas flow 100 sccm; ultrapure water (purity: 99.999%) is used as a reaction oxygen source; the reaction temperature is 150 ℃; the deposition of the oxide layer adopts a pulse cycle reaction mode, the cycle times are 50 times, and FIG. 4 is a sample photo after the thermal control coating of the aluminum alloy test piece is prepared;
(3) the heat radiation performance index test and the measurement results are shown in Table 1
Table 1 shows the results of hemispherical emissivity test on the test pieces in example 1
As can be seen from Table 1, the hemispherical emissivity of the prepared test piece is about 0.04 by adopting the preparation parameters in the embodiment and the thickness of the alumina thermal control coating is 8 nm. The experimental result shows that the alumina thermal control coating with lower hemispherical emissivity (0.04) can be prepared by the process parameters in the embodiment 1, and meanwhile, the same batch of samples has good consistency, the hemispherical emissivity thermal control index is stable, and the positive and negative errors are about 0.01.
Example 2
Preparation of thermal control coating with hemispherical emissivity
(1) Polishing pretreatment is carried out on the surface of the 3A21 aluminum alloy, so that the surface of the aluminum alloy material is leveled and bright, and the roughness is 0.06; the method for measuring the roughness is the prior art;
(2) hemispherical emissivity oxide coating
And putting the polished aluminum alloy test piece (5 pieces) into atomic layer deposition equipment for oxide layer plating. The oxide layer is aluminum oxide; trimethylaluminum (purity 99.9999%) as an aluminum source; nitrogen as a carrier gas (purity: 99.999%); carrier gas flow 100 sccm; ultrapure water (purity: 99.999%) is used as a reaction oxygen source; the reaction temperature is 150 ℃; the oxide layer deposition adopts a pulse cycle reaction mode, and the cycle times are 250.
(3) The thermal radiation performance index test and the measurement results are shown in Table 2
Table 2 shows the results of hemispherical emissivity test on the test pieces in example 2
As can be seen from Table 1, the thickness of the alumina thermal control coating is 1.45 μm by using the preparation parameters in the embodiment, the hemispherical emissivity of the prepared test piece is about 0.45, and the experimental result shows that the alumina thermal control coating with moderate hemispherical emissivity (0.45) can be prepared by using the process parameters in the embodiment 2, and meanwhile, the same batch of sample pieces has good consistency, the hemispherical emissivity thermal control index is stable, and the positive and negative errors are about 0.02.
Example 3
Preparation of thermal control coating with hemispherical emissivity
(1) Polishing the surface of the 3A21 aluminum alloy to ensure that the surface of the aluminum alloy material is leveled and bright and has the roughness of 0.14; the method for measuring the roughness is the prior art;
(2) hemispherical emissivity oxide coating
And putting the polished aluminum alloy test piece (5 pieces) into atomic layer deposition equipment for oxide layer plating. The oxide layer is aluminum oxide; trimethylaluminum (purity 99.9999%) as an aluminum source; nitrogen as a carrier gas (purity: 99.999%); carrier gas flow 200 sccm; ultrapure water (purity: 99.999%) is used as a reaction oxygen source; the reaction temperature is 200 ℃; the oxide layer deposition adopts a pulse cycle reaction mode, and the cycle times are 500.
(3) The thermal radiation performance index test and the measurement results are shown in Table 3
Table 3 shows the results of the hemispherical emissivity test on the test pieces in example 3
As can be seen from Table 1, the experimental results show that the alumina thermal control coating with high hemispherical emissivity (0.76) can be prepared by the process parameters in the example 3, and the consistency of the samples in the same batch is good, the thermal control index of the hemispherical emissivity is stable, and the positive and negative errors are about 0.01.
Example 4
Preparation of thermal control coating with hemispherical emissivity
(1) Polishing the surface of the 3A21 aluminum alloy to ensure that the surface of the aluminum alloy material is leveled and bright and has the roughness of 0.08; the method for measuring the roughness is the prior art;
(2) hemispherical emissivity oxide coating
And putting the polished aluminum alloy test piece (5 pieces) into atomic layer deposition equipment for oxide layer plating. The oxide layer is silicon oxide; diisopropylaminosilane (purity 99.9999%) as a silicon source; nitrogen as a carrier gas (purity: 99.999%); carrier gas flow 300 sccm; oxygen (purity: 99.999%) is used as a reaction oxygen source; the reaction temperature is 250 ℃; the oxide layer deposition adopts a pulse cycle reaction mode, and the cycle times are 300 times.
(3) The heat radiation performance index was measured, and the measurement results are shown in Table 4
Table 4 shows the results of hemispherical emissivity test on the test pieces in example 4
As can be seen from Table 1, the experimental results show that the silicon oxide thermal control coating with moderate hemispherical emissivity (0.18) can be prepared by the process parameters in the example 4, the hemispherical emissivity of the prepared test piece is about 0.18, and meanwhile, the consistency of the sample pieces in the same batch is good, the hemispherical emissivity thermal control index is stable, and the positive error and the negative error are about 0.01.
Example 5
The alumina thermal control coating is prepared by an atomic layer deposition method, and the accurate control of the thickness of the coating is mainly realized by controlling the deposition times of reactants. The more atomic layer deposition times, the gradually increasing film thickness.
The experimental results are as follows: as can be seen from fig. 4, the hemispherical emissivity of the aluminum alloy plated aluminum oxide layer and the thickness of the aluminum oxide layer have a certain change rule, and the hemispherical emissivity gradually increases with the increase of the thickness of the aluminum oxide layer on the surface; when the thickness of the aluminum oxide layer is less than 5 mu m, the thickness of the aluminum oxide layer tends to increase in a film thickness increasing stage, and the emissivity rises quickly; when the thickness of the alumina layer is more than 5 μm, the hemispherical emissivity of the alumina layer gradually tends to be stable, and the hemispherical emissivity slowly rises.
Example 6
The silicon oxide thermal control coating is prepared by an atomic layer deposition method, and the accurate control of the thickness of the coating is mainly realized by controlling the deposition times of reactants. The more atomic layer deposition times, the gradually increasing film thickness.
The experimental results are as follows: as can be seen from FIG. 5, the hemispherical emissivity of the aluminum alloy plated silicon dioxide layer and the thickness of the oxide film have a certain change rule, and the hemispherical emissivity gradually increases with the increase of the thickness of the surface silicon dioxide layer. When the thickness of the silicon dioxide layer is larger than 1.4 μm, the hemispherical emissivity of the silicon dioxide layer gradually tends to be stable, and the hemispherical emissivity slowly rises.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. A preparation method of a thermal control coating on the surface of an aluminum alloy is characterized by comprising the following steps: the method comprises the following steps:
(1) aluminum alloy surface polishing pretreatment: polishing the surface of the aluminum alloy by adopting a mechanical grinding mode;
(2) plating an oxide layer: placing the treated aluminum alloy into atomic layer equipment for plating an oxide layer, wherein the atomic layer deposition equipment has the following process parameters: the flow rate of the carrier gas is 100sccm-300sccm, the reaction temperature is 50-300 ℃, and the deposition of the oxide layer adopts a pulse cycle reaction mode, wherein the cycle times are 1-500.
2. The method for preparing the aluminum alloy surface thermal control coating according to claim 1, wherein the method comprises the following steps: the roughness of the aluminum alloy surface before and after polishing in the step (1) is 0.04-0.14.
3. The method for preparing the aluminum alloy surface thermal control coating according to claim 1, wherein the method comprises the following steps: the oxide layer is an aluminum oxide layer or a silicon oxide layer.
4. The method for preparing the aluminum alloy surface thermal control coating according to claim 3, characterized in that: the precursor of the silicon oxide is diisopropylaminosilane.
5. The method for preparing the aluminum alloy surface thermal control coating according to claim 3, characterized in that: the precursor of the aluminum oxide is trimethylaluminum.
6. The method for preparing the aluminum alloy surface thermal control coating according to claim 1, wherein the method comprises the following steps: and (3) the reaction oxygen source deposited on the oxide layer in the step (2) is ultrapure water or oxygen.
7. The method for preparing the aluminum alloy surface thermal control coating according to claim 1, wherein the method comprises the following steps: the carrier gas is nitrogen.
8. The method for preparing the aluminum alloy surface thermal control coating according to claim 1, wherein the method comprises the following steps: the oxide layer is aluminum oxide, trimethylaluminum is used as an aluminum source, nitrogen is used as a carrier gas, the flow rate of the carrier gas is 100sccm, ultrapure water is used as a reaction oxygen source, the reaction temperature is 50 ℃, and the cycle times are 50 times.
9. The method for preparing the aluminum alloy surface thermal control coating according to claim 1, wherein the method comprises the following steps: the oxide layer is aluminum oxide, trimethylaluminum is used as an aluminum source, nitrogen is used as a carrier gas, the flow rate of the carrier gas is 100sccm, ultrapure water is used as a reaction oxygen source, the reaction temperature is 50 ℃, and the cycle times are 250 times.
10. The method for preparing the aluminum alloy surface thermal control coating according to claim 1, wherein the method comprises the following steps: the oxide layer is aluminum oxide, trimethylaluminum is used as an aluminum source, nitrogen is used as a carrier gas, the flow rate of the carrier gas is 200sccm, oxygen is used as a reaction oxygen source, the reaction temperature is 200 ℃, and the cycle times are 500 times.
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| CN112480727A (en) * | 2020-11-26 | 2021-03-12 | 哈尔滨工业大学 | Preparation method of white molecular adsorption coating with thermal control function |
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