CN104561897A - Thin film used for improving temperature control capacity of intelligent thermal control material and preparation method of thin film - Google Patents

Thin film used for improving temperature control capacity of intelligent thermal control material and preparation method of thin film Download PDF

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Publication number
CN104561897A
CN104561897A CN201410842079.2A CN201410842079A CN104561897A CN 104561897 A CN104561897 A CN 104561897A CN 201410842079 A CN201410842079 A CN 201410842079A CN 104561897 A CN104561897 A CN 104561897A
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rete
substrate
control material
plated film
heat control
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CN104561897B (en
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吴春华
董茂进
王志民
王虎
杨淼
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Lanzhou Institute of Physics of Chinese Academy of Space Technology
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Lanzhou Institute of Physics of Chinese Academy of Space Technology
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

The invention discloses a thin film used for improving temperature control capacity of an intelligent thermal control material and a preparation method of the thin film. With the adoption of the preparation method, the surface of the intelligent thermal control material can be plated with multiple layers of materials with high infrared transmittance and low solar absorptance on the condition that the infrared transmittance of the intelligent thermal control material is not changed, so that the solar absorptance is reduced, the automatic temperature control capacity is improved, and the application range is widened.

Description

A kind of film for changing intelligent heat control material temperature control ability and preparation method thereof
Technical field
The present invention relates to field of film preparation, being specifically related to a kind of film for changing intelligent heat control material temperature control ability and preparation method thereof.
Background technology
The solar absorptance of heat control material and the ratio of infrared emittance determine the autonomous temperature control ability of spacecraft.At present, existing intelligent heat control material, mainly comprises rare earth manganese oxide dopant material La 1-x-ym1 xm2 ymnO 3with doping vanadium oxide V 1-x-ym xn yo 2, wherein, rare earth manganese oxide dopant material La 1-x-ym1 xm2 ymnO 3middle M1 and M2 is diatomic base earth elements, and 0.17≤x+y<0.33; Doping vanadium oxide V 1-x-ym xn yo 2middle M and N is doped element, and 0.02≤x+y<0.10; The infrared emittance of this two classes material can change its infrared emittance according to temperature variation, thus has the function realizing spacecraft independent hot keyholed back plate reason.But the solar absorptance of the heat control material of these two kinds of systems is comparatively large, with La 1-x-ym1 xm2 ymnO 3for example, the solar absorptance on its surface is greater than 0.85.When sun direct irradiation, spacecraft temperature rise will be caused very fast, and autonomous temperature control ability is inadequate, and the solar absorptance of this two classes material is fixing, and the ratio variation range of solar absorptance and infrared emittance is little, causes range of application limited.
Summary of the invention
In view of this, the invention provides a kind of film for changing intelligent heat control material temperature control ability and preparation method thereof, under the immovable situation of himself infrared emittance of intelligent heat control material can be ensured, changing solar absorptance, improve autonomous temperature control ability, expand range of application.
For changing a film for intelligent heat control material temperature control ability, be coated on intelligent heat control material; The first rete that described film is high by specific refractory power, solar absorptance is low, infrared transmittivity is high and the second rete that specific refractory power is low, solar absorptance is low, infrared transmittivity is high form;
Described first rete and the second rete alternately laminated;
One or more in the material selection zinc sulphide of described first rete, zinc selenide, silicon and germanium;
The material selection magnesium fluoride of described second rete and fluoridize in iridium one or both;
The thickness of the various materials selected and lamination order design according to the solar absorptance of heat control material intelligent after plated film and the requirement of infrared emittance; Often kind of material occurs as independent rete.
Preferably, the first rete and the second rete totally 8 ~ 14 layers.
For changing a preparation method for the film of intelligent heat control material temperature control ability, specifically comprise:
Step one, heated substrate:
To scribble the thermal control object of intelligent heat control material as plated film substrate, under vacuum, heated substrate to 350 Kelvin ~ 500 Kelvin;
Step 2, ion beam cleaning substrate:
At the mixed gas of argon gas and oxygen, pure argon or purity oxygen Working environment, the mode of ion beam bombardment is used to clean substrate;
Step 3, thin film deposition:
From zinc sulphide, zinc selenide, silicon and germanium, choose one or more materials as the first rete, choose magnesium fluoride and/or fluoridize the material of iridium as the second rete; With the first rete and the second rete alternately laminated for principle of design, utilize rete design software, according to the solar absorptance of heat control material intelligent after plated film and the requirement of infrared emittance, calculate plated film order and the thicknesses of layers of the various materials chosen, adopt method of evaporation or sputtering method to carry out the deposition of each tunic successively, in deposition process, adopt blooming system monitoring thicknesses of layers simultaneously;
Step 4, substrate cooling:
After plated film completes, substrate naturally cools to room temperature.
Preferably, described first rete and the second rete totally 8 ~ 14 layers.
Preferably, vacuum tightness is less than or equal to 5.0 × 10 -3pa.
Beneficial effect:
1, by being coated with the material of multilayer high IR transmitance, low sunlight absorptivity at intelligent thermal control material surface, to make intelligent heat control material when not changing self infrared emittance, reduce solar absorptance, to improve autonomous temperature control ability, expand range of application.
2, the present invention is for the first rete and the second rete, all provide at least 2 kinds of candidate materials, and when actual plated film, the combination of 2 kinds of (two or more) materials all can be selected for the first rete (the second rete), because only material possibly cannot accurately obtain the index wanted when rete design calculation, and the cooperation of multiple material easily reaches this object.
3, in order under the immovable as far as possible prerequisite of the infrared emittance of intelligent heat control material self, ensure that solar absorptance is little as much as possible, therefore coating layers controls at 8 ~ 14 layers.
Embodiment
Below by for embodiment, describe the present invention.
The invention provides a kind of scheme for changing intelligent heat control material temperature control ability, its main thought is: by the absorption visible ray of heat energy heat control material plated surface in visible spectrum range few (solar absorptance is low) and for the material of the transmitance in infrared range of spectrum high (infrared transmittivity is high), and then when not changing heat control material self infrared emittance, change solar absorptance, change autonomous temperature control ability further.
According to optical coating requirement, the present invention adopts two kinds of retes that specific refractory power is high and specific refractory power is low to carry out alternately laminated, meets the requirement that solar absorptance is low, infrared transmittivity is high.
Wherein, the rete that specific refractory power is high, solar absorptance is low, infrared transmittivity is high material is formed is called the first rete, and the rete that specific refractory power is low, solar absorptance is low, infrared transmittivity is high material is formed is called the second rete.The film that the present invention changes intelligent heat control material temperature control ability is made up of the first rete and the second rete, and the first rete and the second rete alternately laminated.
For the first rete and the second rete, only a kind of material cannot accurately obtain the index wanted when rete design calculation, and the cooperation of multiple material easily reaches this object.Therefore, the present invention all provides at least 2 kinds of candidate materials for the first rete and the second rete.Specifically, one or more in the material selection zinc sulphide of the first rete, zinc selenide, silicon and germanium.The material selection magnesium fluoride of the second rete and fluoridize in iridium one or both.
Wherein, magnesium fluoride and fluoridize iridium for changing solar absorptance, this kind of material possesses that in visible spectrum range, to absorb visible ray few, and its visible-light absorptivity is less than or equal to 4%, in infrared range of spectrum, have the advantage of high-permeability, its infrared transmittivity is more than or equal to 75%.And the specific refractory power of magnesium fluoride is 1.4, the specific refractory power of fluoridizing iridium is 1.44; Zinc sulphide, zinc selenide, silicon or germanium have high-permeability in infrared range of spectrum, and its infrared transmittivity is all more than or equal to 75%, and little to the specific absorption of visible ray in visible spectrum range, and its visible-light absorptivity is less than or equal to 20%; And the specific refractory power of zinc selenide be 2.3, the specific refractory power of germanium is 4.0, the specific refractory power of zinc sulphide is 2.5, and the specific refractory power of silicon is 3.42.
It should be noted that, when the first rete or the second rete select two or more materials, the use order of these materials need not be limited, but often kind of material occurs as independent rete, can not use with.Such as, when the first rete selects zinc sulphide and zinc selenide, when needs are coated with one deck the first rete, adopt zinc sulphide, when being coated with another layer first rete, select zinc selenide, zinc sulphide and zinc selenide can not be used with within the same layer.
The thickness of the above-mentioned various material selected and lamination order design according to the solar absorptance of heat control material intelligent after plated film and the requirement of infrared emittance, and by method of evaporation or sputtering method alternate plating, to reach when not changing heat control material self infrared emittance, change solar absorptance, change autonomous temperature control ability further.
The preparation method of the above-mentioned film for changing intelligent heat control material temperature control ability is:
Step one, heated substrate:
To scribble the thermal control object of intelligent heat control material as plated film substrate, under vacuum, heated substrate to 350 Kelvin ~ 500 Kelvin.Wherein, the vacuum tightness of vacuum condition is better than 5.0 × 10 -3pa.
Step 2, ion beam cleaning substrate:
After substrate has been heated, be the Bombardment and cleaning substrate 5 minutes to 25 minutes in the Working environment being full of the mixed gas of argon gas and oxygen, independent argon gas or independent oxygen of the ionic fluid of 80eV ~ 130eV with energy.
Step 3, thin film deposition:
From zinc sulphide, zinc selenide, silicon and germanium, choose more than one materials as the first rete, choose magnesium fluoride and/or fluoridize the material of iridium as the second rete; With the first rete and the second rete alternately laminated for principle of design, utilize MacLeod's rete design software or Film Design software TFC, according to the solar absorptance of heat control material intelligent after plated film and the requirement of infrared emittance, calculate plated film order and the thicknesses of layers of the various materials chosen, after making plated film, the solar absorptance of intelligent heat control material is changed, and infrared emittance can meet design requirement.Then, adopt method of evaporation or sputtering method to carry out the deposition of each tunic successively according to the plated film order of design, in deposition process, adopt blooming system monitoring thicknesses of layers simultaneously, ensure that thicknesses of layers reaches design requirements.For ensureing coating effects, coating layers is 8 ~ 14 layers.
Wherein, method of evaporation utilizes evaporating and coating equipment, to vaporized state, makes Coating Materials be deposited into substrate by heating film-coated material successively.Sputtering method is that Coating Materials is placed in as target the environment being full of argon gas, produces glow discharge and makes argon ion bombardment target, and then cause target material to be sputtered onto substrate by additional power source.Wherein, Assisted by Ion Beam bombarding voltage is 100eV.
Step 4, substrate cooling:
After plated film completes, substrate naturally cools to room temperature.
So far, preparation process terminates.
Exemplify four embodiments to be below described in detail preparation process of the present invention.
Embodiment 1: adopt method of evaporation, select silicon and germanium as the material of the first rete, select magnesium fluoride as the material of the second rete, at La 0.7sr 0.1ca 0.2mnO 3on prepare multilayer film.
Step 1, heated substrate:
To scribble the thermal control object of intelligent heat control material as plated film substrate, be 2 × 10 in vacuum tightness -4under the condition of Pa, heated substrate to 400 Kelvin.
Step 2, ion beam cleaning substrate:
After substrate has been heated, be the Bombardment and cleaning substrate 5 minutes to 25 minutes in the mixed gas Working environment being full of argon gas and oxygen of the ionic fluid of 100eV with energy.
Step 3, multilayer film deposit:
Select silicon and germanium as the material of the first rete, select magnesium fluoride as the material of the second rete; With the first rete and the second rete alternately laminated for principle of design, utilize MacLeod's rete design software or TFC software, according to the solar absorptance of heat control material intelligent after plated film and the requirement of infrared emittance, obtain selected various materials at intelligent heat control material La 0.7ca 0.3mnO 3on plated film order and thicknesses of layers be followed successively by 136nm germanium, 150nm magnesium fluoride, 90nm germanium, 160nm magnesium fluoride, 40nm silicon, 165nm magnesium fluoride, 40nm silicon, 150nm magnesium fluoride and 25nm silicon.Then, adopt evaporating and coating equipment to carry out the deposition of each tunic successively according to plated film order, meanwhile, in the process of deposition, adopt blooming system monitoring thicknesses of layers, ensure that thicknesses of layers reaches design requirements.
Step 4: substrate is lowered the temperature:
After plated film completes, substrate is allowed to naturally cool to room temperature.
So far, preparation process terminates.
Non-plated film compares with plated film: uncoated La 0.7sr 0.1ca 0.2mnO 3solar absorptance be 0.86, infrared emittance variable quantity is 0.43; By at La 0.7sr 0.1ca 0.2mnO 3on be coated with above-mentioned optical multilayer, La 0.7sr 0.1ca 0.2mnO 3the solar absorptance of intelligence heat control material becomes 0.28, and infrared emittance is 0.41.As can be seen here, after plated film, solar absorptance significantly reduces, and infrared emittance does not almost change.
Embodiment 2: adopt method of evaporation, select silicon and germanium as the material of the first rete, select magnesium fluoride as the material of the second rete; At VO 2on prepare multilayer film.
Step 1, heated substrate:
To scribble the thermal control object of intelligent heat control material as plated film substrate, be 2 × 10 in vacuum tightness -4under the condition of Pa, heated substrate to 400 Kelvin.
Step 2, ion beam cleaning substrate:
After substrate has been heated, be the Bombardment and cleaning substrate 5 minutes to 25 minutes in the Working environment being full of argon gas of the ionic fluid of 100eV with energy.
Step 3, multilayer film deposit:
Select silicon and germanium as the material of the first rete, select magnesium fluoride as the material of the second rete; With the first rete and the second rete alternately laminated for principle of design, utilize MacLeod's rete design software or TFC software, according to the solar absorptance of heat control material intelligent after plated film and the requirement of infrared emittance, obtain selected various materials at intelligent heat control material at VO 2on plated film order and thicknesses of layers be followed successively by 136nm germanium, 150nm magnesium fluoride, 90nm germanium, 160nm magnesium fluoride, 40nm silicon, 165nm magnesium fluoride, 40nm silicon, 150nm magnesium fluoride and 25nm silicon.Then, adopt evaporating and coating equipment to carry out the deposition of each tunic successively according to plated film order, meanwhile, in the process of deposition, adopt blooming system monitoring thicknesses of layers, ensure that thicknesses of layers reaches design requirements.
Step 4: substrate is lowered the temperature:
After plated film completes, substrate is allowed to naturally cool to room temperature.
So far, preparation process terminates.
Non-plated film compares with plated film: uncoated VO 2solar absorptance be 0.46, high/low temperature emittance variable quantity is 0.45; By being coated with above-mentioned optical multilayer thereon, VO 2the solar absorptance of intelligence heat control material becomes 0.32, and high/low temperature infrared emittance variable quantity is 0.43.As can be seen here, after plated film, solar absorptance reduces to some extent, and infrared emittance does not almost change.
Embodiment 3: adopt sputtering method, select silicon and germanium as the material target of the first rete, select magnesium fluoride as the material target of the second rete; At La 0.825sr 0.175mnO 3on prepare multilayer film.
Step 1, heated substrate:
To scribble the thermal control object of intelligent heat control material as plated film substrate, be 2 × 10 in vacuum tightness -4under the condition of Pa, heated substrate to 400 Kelvin.
Step 2, ion beam cleaning substrate:
After substrate has been heated, be the Bombardment and cleaning substrate 5 minutes to 25 minutes in the Working environment being full of oxygen of the ionic fluid of 100eV with energy.
Step 3, multilayer film deposit:
Select silicon and germanium as the material of the first rete, select magnesium fluoride as the material of the second rete; With the first rete and the second rete alternately laminated for principle of design, utilize MacLeod's rete design software or TFC software, according to the solar absorptance of heat control material intelligent after plated film and the requirement of infrared emittance, obtain selected various materials at intelligent heat control material at VO 2on plated film order and thicknesses of layers be followed successively by 110nm germanium, 260nm magnesium fluoride, 75nm germanium, 220nm magnesium fluoride, 40nm silicon, 180nm magnesium fluoride, 40nm silicon, 120nm magnesium fluoride, 40nm silicon and 20nm magnesium fluoride.Then, material target to be sputtered is placed in negative electrode, this Working environment is energized, the material target making argon ion bombardment to be sputtered, and the deposition of each tunic is carried out successively according to plated film order, meanwhile, in the process of deposition, adopt blooming system monitoring thicknesses of layers, ensure that thicknesses of layers reaches design requirements.
Step 4: substrate is lowered the temperature:
After plated film completes, substrate is allowed to naturally cool to room temperature.
So far, preparation process terminates.
Non-plated film compares with plated film: uncoated La 0.825sr 0.175mnO 3solar absorptance be 0.87, high/low temperature emittance variable quantity is 0.41; By at La 0.825sr 0.175mnO 3on be coated with above-mentioned optical multilayer, La 0.825sr 0.175mnO 3the solar absorptance of intelligence heat control material becomes 0.25, and high/low temperature infrared emittance variable quantity is 0.41.As can be seen here, after plated film, solar absorptance reduces to some extent, and infrared emittance does not change.
Embodiment 4: adopt sputtering method, select silicon and germanium as the material of the first rete, select magnesium fluoride as the material of the second rete; At VO 2on prepare multilayer film.
Step 1, heated substrate:
To scribble the thermal control object of intelligent heat control material as plated film substrate, be 2 × 10 in vacuum tightness -4under the condition of Pa, heated substrate to 400 Kelvin.
Step 2, ion beam cleaning substrate:
After substrate has been heated, be the Bombardment and cleaning substrate 5 minutes to 25 minutes in the mixed gas Working environment being full of argon gas and oxygen of the ionic fluid of 100eV with energy.
Step 3, multilayer film deposit:
Select silicon and germanium as the material of the first rete, select magnesium fluoride as the material of the second rete; With the first rete and the second rete alternately laminated for principle of design, utilize according to MacLeod's rete design software or TFC software, according to the solar absorptance of heat control material intelligent after plated film and the requirement of infrared emittance, obtain selected various materials at intelligent heat control material at VO 2on plated film order and thicknesses of layers be followed successively by 110nm germanium, 260nm magnesium fluoride, 75nm germanium, 220nm magnesium fluoride, 40nm silicon, 180nm magnesium fluoride, 40nm silicon, 120nm magnesium fluoride, 40nm silicon and 20nm magnesium fluoride.Then, material target to be sputtered is placed in negative electrode, this Working environment is energized, the material target making argon ion bombardment to be sputtered, and the deposition of each tunic is carried out successively according to plated film order, meanwhile, in the process of deposition, adopt blooming system monitoring thicknesses of layers, ensure that thicknesses of layers reaches design requirements.
Step 4: substrate is lowered the temperature:
After plated film completes, substrate is allowed to naturally cool to room temperature.
So far, preparation process terminates.
Non-plated film compares with plated film: uncoated VO 2solar absorptance be 0.46, high/low temperature emittance variable quantity is 0.45; By being coated with above-mentioned optical multilayer thereon, VO 2the solar absorptance of intelligence heat control material becomes 0.25, and high/low temperature infrared emittance variable quantity is 0.42.As can be seen here, after plated film, solar absorptance reduces to some extent, and infrared emittance does not almost change.
In sum, these are only preferred embodiment of the present invention, be not intended to limit protection scope of the present invention.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (5)

1., for changing a film for intelligent heat control material temperature control ability, be coated on intelligent heat control material; It is characterized in that, described film is high by specific refractory power, solar absorptance is low, the first rete that infrared transmittivity is high and specific refractory power is low, solar absorptance is low, infrared transmittivity is high the second rete form;
Described first rete and the second rete alternately laminated;
One or more in the material selection zinc sulphide of described first rete, zinc selenide, silicon and germanium;
The material selection magnesium fluoride of described second rete and fluoridize in iridium one or both;
The thickness of the various materials selected and lamination order design according to the solar absorptance of heat control material intelligent after plated film and the requirement of infrared emittance; Often kind of material occurs as independent rete.
2. film as claimed in claim 1, is characterized in that, described first rete and the second rete 8 ~ 14 layers totally.
3., for changing a preparation method for the film of intelligent heat control material temperature control ability, it is characterized in that, specifically comprise:
Step one, heated substrate:
To scribble the thermal control object of intelligent heat control material as plated film substrate, under vacuum, heated substrate to 350 Kelvin ~ 500 Kelvin;
Step 2, ion beam cleaning substrate:
At the mixed gas of argon gas and oxygen, pure argon or purity oxygen Working environment, the mode of ion beam bombardment is used to clean substrate;
Step 3, thin film deposition:
From zinc sulphide, zinc selenide, silicon and germanium, choose more than one materials as the first rete, choose magnesium fluoride and/or fluoridize the material of iridium as the second rete; With the first rete and the second rete alternately laminated for principle of design, utilize rete design software, according to the solar absorptance of heat control material intelligent after plated film and the requirement of infrared emittance, calculate plated film order and the thicknesses of layers of the various materials chosen, adopt method of evaporation or sputtering method to carry out the deposition of each tunic successively, in deposition process, adopt blooming system monitoring thicknesses of layers simultaneously;
Step 4, substrate cooling:
After plated film completes, substrate naturally cools to room temperature.
4. method as claimed in claim 3, is characterized in that, described first rete and the second rete 8 ~ 14 layers totally.
5. method as claimed in claim 3, it is characterized in that, described vacuum condition is: vacuum tightness is less than or equal to 5.0 × 10 -3pa.
CN201410842079.2A 2014-12-30 2014-12-30 It is a kind of to be used to change film of intelligent heat control material temperature control ability and preparation method thereof Active CN104561897B (en)

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CN110438460A (en) * 2019-05-30 2019-11-12 兰州空间技术物理研究所 A kind of solar absorptance and the regulatable heat controlled thin film structure of infrared emittance and its determine method
CN112764286A (en) * 2021-01-29 2021-05-07 哈尔滨工业大学 Thermal control device for intelligently regulating infrared emissivity and preparation method thereof
CN112853294A (en) * 2021-01-07 2021-05-28 哈尔滨工业大学 Microwave transparent thermal control film and preparation method thereof
CN113917755A (en) * 2021-10-19 2022-01-11 山东非金属材料研究所 Intelligent thermal control film

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106756851A (en) * 2016-12-27 2017-05-31 兰州空间技术物理研究所 A kind of controllable heat control material of emissivity and preparation method thereof
CN108866483A (en) * 2018-06-26 2018-11-23 中国人民解放军国防科技大学 Intelligent thermal control device and preparation method thereof
CN108866483B (en) * 2018-06-26 2020-08-07 中国人民解放军国防科技大学 Intelligent thermal control device and preparation method thereof
CN110438460A (en) * 2019-05-30 2019-11-12 兰州空间技术物理研究所 A kind of solar absorptance and the regulatable heat controlled thin film structure of infrared emittance and its determine method
CN112853294A (en) * 2021-01-07 2021-05-28 哈尔滨工业大学 Microwave transparent thermal control film and preparation method thereof
CN112764286A (en) * 2021-01-29 2021-05-07 哈尔滨工业大学 Thermal control device for intelligently regulating infrared emissivity and preparation method thereof
CN113917755A (en) * 2021-10-19 2022-01-11 山东非金属材料研究所 Intelligent thermal control film
CN113917755B (en) * 2021-10-19 2024-05-07 山东非金属材料研究所 Intelligent thermal control film

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