CN106711160A - 一种阵列基板、显示面板及显示装置 - Google Patents

一种阵列基板、显示面板及显示装置 Download PDF

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CN106711160A
CN106711160A CN201710209163.4A CN201710209163A CN106711160A CN 106711160 A CN106711160 A CN 106711160A CN 201710209163 A CN201710209163 A CN 201710209163A CN 106711160 A CN106711160 A CN 106711160A
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CN106711160B (zh
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刘利萍
黄静
陈仁坦
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Priority to US16/315,863 priority patent/US10790315B2/en
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    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/50—Protective arrangements

Abstract

本发明提供一种阵列基板、显示面板及显示装置，所述阵列基板包括依次形成在衬底基板上的走线和绝缘层，阵列基板的绝缘层远离走线的一侧包括绑定区域，通过在阵列基板的绑定区域内设置至少部分与阵列基板的边缘平齐的第一保护层，在切割阵列基板的过程中，第一保护层在一定程度上可以用对衬底基板起到支撑作用，增强衬底基板的强度，避免衬底基板发生破损，提高切割良率。

Description

一种阵列基板、显示面板及显示装置
技术领域
本发明涉及显示技术领域，具体涉及一种阵列基板、显示面板及显示装置。
背景技术
在显示面板制备过程中，阵列基板上由于设置电极、金属走线等，在长度方向和宽度方向通常都要比彩膜基板大，阵列基板上未与彩膜基板相对应的这部分区域即为绑定区域。
在切割阵列基板时，由于阵列基板的绑定区域位置的衬底基板是单片玻璃(彩膜基板没有延伸到其上方)，因此，阵列基板的绑定区域的边角位置处的衬底基板经常会发生贝壳状的破损，当衬底基板有毛边时，还需要进行打磨，但是由于衬底基板的强度不够，打磨时也容易发生破损。若阵列基板的绑定区域的边角位置发生破损导致缺角，会影响后续工艺，降低切割良率，而这种破损不易检出，或是在工艺过程中产生的进行性的破损，影响后制成，造成产品与材料损失。
发明内容
本发明针对现有技术中存在的上述不足，提供一种阵列基板、显示面板及显示装置，用以至少部分解决在切割过程中阵列基板易发生破损的问题。
本发明为解决上述技术问题，采用如下技术方案：
本发明提供一种阵列基板，所述阵列基板包括依次形成在衬底基板上的走线和绝缘层，所述阵列基板的绝缘层远离所述走线的一侧包括绑定区域，其特征在于，所述阵列基板还包括第一保护层，所述第一保护层位于所述阵列基板的绑定区域内，并至少部分与所述阵列基板的边缘平齐。
优选的，所述第一保护层位于所述阵列基板的未与彩膜基板的边缘相对应的边缘位置，和/或，位于所述绑定区域的拐角位置。
进一步的，所述阵列基板还包括第二保护层，所述第二保护层位于所述绑定区域与封框胶的预留区域之间的加强区域。
优选的，所述第二保护层位于所述加强区域的拐角位置，和/或，所述加强区域的邻近所述阵列基板的边缘位置。
优选的，所述第一保护层和第二保护层为透明保护层。
优选的，所述第一保护层和第二保护层同层设置，且厚度相同。
优选的，所述厚度为4000A-3000A。
本发明提供一种显示面板，包括如前所述的阵列基板。所述显示面板为用于沿显示面板的长度方向或宽度方向摩擦取向的高级超维场转换显示面板或高开口率高级超维场转换显示面板。
本发明还提供一种显示装置，包括前所述的显示面板。
本发明能够实现以下有益效果：
本发明的阵列基板包括依次形成在衬底基板上的走线和绝缘层，阵列基板的绝缘层远离走线的一侧包括绑定区域，通过在阵列基板的绑定区域内设置至少部分与阵列基板的边缘平齐的第一保护层，在切割阵列基板的过程中，第一保护层在一定程度上可以对衬底基板起到支撑作用，增强衬底基板的强度，避免衬底基板发生破损，提高切割良率。
附图说明
图1a为本发明实施例的阵列基板的俯视图之一；
图1b为图1a中A-A’处的截面图；
图2a为本发明实施例的阵列基板的俯视图之二；
图2b为图2a中B-B’处的截面图；
图3为本发明实施例制备第一或第二保护层的工艺流程示意图。
图例说明：
1、阵列基板 2、彩膜基板 3、封框胶
11、衬底基板 12、走线 13、绝缘层
14、绑定区域 15、第一保护层 16、第二保护层
17、加强区域 141、第一绑定区域 142、第二绑定区域
4、光刻胶 5、掩膜板
具体实施方式
下面将结合本发明中的附图，对本发明中的技术方案进行清楚、完整的描述，显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
结合图1a、图1b、图2a和图2b所示，本发明实施例提供一种阵列基板1，所述阵列基板包括依次形成在衬底基板11上的走线12和绝缘层13。走线12可以是栅线、数据线、测试线等金属线，绝缘层13覆盖在走线12上，起到绝缘和保护的作用。阵列基板1的绝缘层13远离走线12的一侧包括绑定区域14，也就是说，绑定区域14为位于阵列基板1的与彩膜基板2对盒的一侧，且未与彩膜基板2相对应的区域。如图1a所示，绑定区域14包括沿阵列基板1的宽度方向延伸的第一绑定区域141(即图1a中阵列基板1的短边对应的绑定区域)和沿阵列基板1的长度方向延伸的第二绑定区域142(即图1a中阵列基板1的长边对应的绑定区域)。阵列基板1还包括第一保护层15，第一保护层15位于阵列基板1的绑定区域14内，并至少部分与阵列基板1的边缘平齐。
通过在阵列基板1的绑定区域14内设置至少部分与阵列基板1的边缘平齐的第一保护层15，在切割阵列基板1的过程中，第一保护层15在一定程度上可以用对衬底基板11起到支撑作用，增强衬底基板11的强度，避免衬底基板11发生破损，提高切割良率。
具体的，如图1a所示，第一保护层15可以位于阵列基板1的未与彩膜基板2的边缘相对应的边缘位置(即第一绑定区域141和第二绑定区域142的边缘)和绑定区域14的拐角位置(即第一绑定区域141和第二绑定区域142相交的位置)。
由于绑定区域14的拐角位置相对于阵列基板1的边缘位置受到撞击后更容易破损，造成阵列基板1缺角，因此，优选的，位于绑定区域14的拐角位置的第一保护层15的宽度大于位于阵列基板1的边缘位置的第一保护层15的宽度，这样，可以使阵列基板1的拐角位置处得到更有效的保护，降低破损率。
如图2a所示，第一保护层15也可以只设置在阵列基板1的未与彩膜基板2的边缘相对应的边缘位置。第一保护层15也可以只设置在绑定区域14的拐角位置，即图1a所示的拐角位置(但不在阵列基板1的边缘位置设置第一保护层15)。当然，本领域技术人员可知，同时在阵列基板1的未与彩膜基板2的边缘相对应的边缘位置和绑定区域14的拐角位置设置第一保护层15(即图1a所示)的方案，对阵列基板1的衬底基板11的保护效果最佳。
进一步的，阵列基板1与彩膜基板2之间通过封框胶3密封。阵列基板1还可以包括第二保护层16，第二保护层16位于绑定区域14与封框胶3的预留区域之间的加强区域17。
如图1b和图2b所示，加强区域17为封框胶3的边缘与彩膜基板2的边缘之间的区域在阵列基板1上的投影区域。结合图1a和图1b所示，图中虚线箭头为彩膜基板2的切割线。彩膜基板2也包括衬底基板(图中未示出)，在切割彩膜基板2时，彩膜基板2的衬底基板的边缘受力，由于彩膜基板2上与加强区域17对应的区域是悬空的，使得彩膜基板2上与加强区域17对应的边缘容易发生破损，因此，在加强区域17内设置第二保护层16，第二保护层16可以对彩膜基板2起到缓冲作用，减少彩膜基板2的衬底基板的破损率。
具体的，如图1a和图2a所示，第二保护层16可以位于加强区域17的拐角位置，以及加强区域17的邻近阵列基板1的边缘位置。
当沿彩膜基板2的长度方向(x方向)切割时，位于加强区域17的拐角位置的第二保护层16和位于加强区域17的邻近阵列基板1的宽度方向的边缘位置的第二保护层16(即图1a和图1b中加强区域17最右端的第二保护层16)共同对彩膜基板2起到支撑作用，可以在一定程度上对切割产生的作用力进行缓冲。当沿彩膜基板2的宽度方向(y方向)切割时，位于加强区域17的拐角位置的第二保护层16和位于加强区域17的邻近阵列基板1的长度方向的边缘位置的第二保护层16(即图1a和图1b中加强区域17最下端的第二保护层16)共同对彩膜基板2起到支撑作用，可以在一定程度上对切割产生的作用力进行缓冲。
需要说明的是，第二保护层16也可以只设置在加强区域17的拐角位置，或者，只设置在加强区域17的邻近阵列基板1的边缘位置。当然，本领域技术人员可知，同时在加强区域17的拐角位置和加强区域17的邻近阵列基板1的边缘位置设置第二保护层16(即图1a和图2a所示)的方案，对彩膜基板2的衬底基板的保护效果最佳。
由于阵列基板1和彩膜基板2上设置有对位标记和切割标记，为了避免遮挡对位标记和切割标记，优选的，第一保护层15和第二保护层16为透明保护层，从而保证对盒工艺和切割工艺的顺利进行。
优选的，第一保护层15和第二保护层16同层设置，且材料和厚度相同，这样，可以通过一次构图工艺同步形成第一保护层15的图案和第二保护层16的图案，简化制备工艺。
如图3所示，可以在完成制备绝缘层13的步骤之后，增加制备第一保护层15和第二保护层16的步骤。即在制备完成绝缘层13的阵列基板1上涂覆光刻胶(PR)4，并采用掩膜板5进行曝光、显影、刻蚀，在绝缘层13上未与彩膜基板2的边缘相对应的边缘位置和/或绑定区域14的拐角位置形成第一保护层15的图形，以及，在绝缘层13上的加强区域17的拐角位置和/或加强区域17的邻近阵列基板1的边缘位置形成第二保护层16的图形。
图3所示的工艺中，是以光刻胶4为负性光刻胶，在阵列基板1上形成与掩膜板5的遮光图案相反的图形为例说明的，即形成的第一保护层15和第二保护层16的图形为与掩膜板4的镂空部图案相同的图形。需要说明的是，在制备第一保护层15和第二保护层16的过程中，可以根据掩膜板的结构和图案选用正性光刻胶或负性光刻胶。
优选的，第一保护层15和第二保护层16的厚度为4000-3000A。
如图1b和图2b所示，第一保护层15和第二保护层16的厚度略小于封框胶3的厚度，也就是说，第一保护层15和第二保护层16与彩膜基板2之间具有间隙，当切割彩膜基板2时，彩膜基板2受到向下的作用力，封框胶3受力压缩，彩膜基板2可以与位于其下方的第二保护层16接触，这样，第二保护层16可以对彩膜基板2起到辅助支撑和缓冲的作用。
本发明实施例还提供一种显示面板，所述显示面板包括彩膜基板2和如前所述的阵列基板1。
通过在阵列基板1的绑定区域14内设置至少部分与阵列基板1的边缘平齐的第一保护层15，在切割阵列基板1的过程中，第一保护层15在一定程度上可以用对衬底基板11起到支撑作用，增强衬底基板11的强度，避免衬底基板11发生破损，提高切割良率。
优选的，所述显示面板为用于沿显示面板的长度方向或宽度方向摩擦取向的ADS(Advanced Super Dimension Switch，高级超维场转换)或H-ADS(高开口率ADS)显示面板。如图1a和图2a所示，所述显示面板AA区(显示区)位于封框胶3所包围的区域内，由于第一保护层15和第二保护层16均位于AA区之外，在进行摩擦取向时，沿显示面板的长度方向或宽度方向摩擦取向，不会影响AA区的取向。
本发明在阵列基板的绑定区域的边缘以及绑定区域的夹角位置等易发生破损的薄弱区域，设置透明的第一保护层，第一保护层设置在AA区以外，能够适用于沿显示面板的长度方向或宽度方向摩擦取向的ADS或H-ADS显示面板。
本发明的阵列基板及显示面板，能够对阵列基板和彩膜基板进行局部加强保护，在切割中产生较少的边角破损与缺角，而且可以减少后制成中进行性破损造成的宕机影响和产品损失。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (10)

1.一种阵列基板，所述阵列基板包括依次形成在衬底基板上的走线和绝缘层，所述阵列基板的绝缘层远离所述走线的一侧包括绑定区域，其特征在于，所述阵列基板还包括第一保护层，所述第一保护层位于所述阵列基板的绑定区域内，并至少部分与所述阵列基板的边缘平齐。
2.如权利要求1所述的阵列基板，其特征在于，所述第一保护层位于所述阵列基板的未与彩膜基板的边缘相对应的边缘位置，和/或，位于所述绑定区域的拐角位置。
3.如权利要求2所述的阵列基板，其特征在于，还包括第二保护层，所述第二保护层位于所述绑定区域与封框胶的预留区域之间的加强区域。
4.如权利要求3所述的阵列基板，其特征在于，所述第二保护层位于所述加强区域的拐角位置，和/或，所述加强区域的邻近所述阵列基板的边缘位置。
5.如权利要求3或4所述的阵列基板，其特征在于，所述第一保护层和第二保护层为透明保护层。
6.如权利要求3或4所述的阵列基板，其特征在于，所述第一保护层和第二保护层同层设置，且厚度相同。
7.如权利要求6所述的阵列基板，其特征在于，所述厚度为4000A-3000A。
8.一种显示面板，其特征在于，包括如权利要求1-7任一项所述的阵列基板。
9.如权利要求8所述的显示面板，其特征在于，所述显示面板为高级超维场转换显示面板或高开口率高级超维场转换显示面板。
10.一种显示装置，其特征在于，包括如权利要求8或9所述的显示面板。
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