CN106711062A - Technological reaction chamber air flow field realizing device and realizing method thereof - Google Patents
Technological reaction chamber air flow field realizing device and realizing method thereof Download PDFInfo
- Publication number
- CN106711062A CN106711062A CN201510796966.5A CN201510796966A CN106711062A CN 106711062 A CN106711062 A CN 106711062A CN 201510796966 A CN201510796966 A CN 201510796966A CN 106711062 A CN106711062 A CN 106711062A
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- nozzle
- swing arm
- wafer
- cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention belongs to the semiconductor industry wafer wet processing field, to be specific, relates to a technological reaction chamber air flow field realizing device and a realizing method thereof. A spindle motor is used to drive a wafer supporting bench provided with a wafer to rotate, and a technological swinging arm is used to drive a technological nozzle to rotate to the upper part of the wafer and start spraying of chemical liquid, and at the same time, various nozzles disposed on a nozzle connecting block on one side of the technological chamber are opened to jet air in the technological chamber. After the air flow passes by the upper part of the wafer, the air flow is exhausted by an exhaust opening disposed in the other side of the technological chamber, and therefore the air flow filed capable of flowing horizontally is formed in the technological chamber. After the above mentioned technological process is completed, the technological swinging arm is used to drive the technological nozzle to reset, and a cleaning swinging arm is used to drive a swinging arm nozzle to rotate to the upper part of the wafer and start to spraying cleaning liquid for cleaning. After the cleaning process is completed, the cleaning swinging arm is used to drive the swinging arm nozzle to reset, and the various nozzles stops jetting the air. By adopting the flow direction design of the air flow field in the technological chamber, adjustment of pressure in the technological chamber is realized, and cleanliness in the technological chamber is guaranteed.
Description
Technical field
The invention belongs to semicon industry wafer wet process field, specifically a kind of technique
Reaction cavity airflow field realizes device and its implementation.
Background technology
At present, wafer wet processing equipment is directed to the design of process cavity in semicon industry,
The distribution design of airflow field is also an important ring therein in the design of process cavity.And it is how whole
Close and the design of optimization airflow just becomes an inevitable problem.
The content of the invention
It is an object of the invention to provide a kind of technological reaction cavity airflow field realize device and
Its implementation.
The purpose of the present invention is achieved through the following technical solutions：
It is of the invention realize device include process cavity, cavity cover, spindle motor, collection cups,
Wafer-supporting platform, cleaning swing arm, swing arm nozzle, technique swing arm and technique nozzle, wherein collection cups peace
In the process cavity, the wafer-supporting platform for carrying wafer, institute are provided with the collection cups
Spindle motor is stated installed in process cavity lower section, and is connected with the wafer-supporting platform, driven wafer-supporting platform
Drive wafer rotation；The cleaning swing arm and technique swing arm are rotationally connected with process cavity respectively
Homonymy, is separately installed with the swing arm nozzle of sprinkling cleaning fluid in the cleaning swing arm and technique swing arm
And the technique nozzle of chemigation；The cavity cover is sealedly attached to process cavity top；Institute
State the relative both sides of process cavity and be separately installed with nozzle contiguous block and exhaust outlet, nozzle connection
Block is located near the side of the cleaning swing arm, be evenly equipped with the nozzle contiguous block it is multiple to
The gas nozzle of gas is sprayed in process cavity, the gas that each gas nozzle sprays is by institute
State wafer top, extracted out by the exhaust outlet of opposite side, water is formed in the process cavity
The dynamic airflow field of advection.
Wherein：Both sides where the gas nozzle and exhaust outlet are located at cleaning swing arm and technique pendulum
The both sides of arm installation side, the two ends of the exhaust outlet are located inside and outside process cavity respectively；Respectively
The valve of adjusting gas flow is mounted on the pipeline that the gas nozzle is connected.
The present invention realizes that the implementation method of device is：The spindle motor drives and is loaded with holding for wafer
Piece platform rotates, and the technique swing arm goes to the wafer top, starts sprinkling with technique nozzle
Chemical liquids；Meanwhile, each gas nozzle on the nozzle contiguous block of process cavity side
Open, to spraying into gas in the process cavity, air-flow by behind wafer top, by position
Discharged in the exhaust outlet of the process cavity opposite side, level stream is internally formed in the process cavity
Dynamic airflow field；After technique terminates, the technique swing arm resets with technique nozzle, described clear
Swing arm is washed to go to wafer top with swing arm nozzle, start sprinkling cleaning fluid and cleaned,
After cleaning, the cleaning swing arm resets with swing arm nozzle, and each gas nozzle stops jet.
Wherein：When the gas that each gas nozzle sprays blows over cleaning swing arm and swing arm nozzle,
The superincumbent chemical liquids of backwash can be blown off, it is to avoid chemical liquids drippage when cleaning swing arm is cleaned
On the surface of wafer.
Advantages of the present invention is with good effect：
1. it is of the invention to realize that device is designed by the flow direction to process cavity interior air-flow, it is real
The adjustment of pressure in process cavity is showed.
2. the present invention realizes the gas that the gas nozzle of device sprays, while may also function as protection
The effect of the chemical liquids pollution that cleaning swing arm and swing arm nozzle are not gone out by backwash, it is ensured that clean
Degree.
3. the present invention realizes that the gas flow that the gas nozzle of device sprays can be adjusted so that
Air positive/negative pressure in process cavity can be adjusted as needed.
5. implementation method of the present invention is simple, convenient, while airflow field is realized, also
The steam inside process cavity, the humidity in adjusting process cavity can be discharged.
Brief description of the drawings
Fig. 1 is structure top view of the invention；
Fig. 2 is structural front view of the invention；
Wherein：1 is gas nozzle, and 2 is nozzle contiguous block, and 3 is swing arm nozzle, and 4 is cleaning
Swing arm, 5 is process cavity, and 6 is swing arm Rotary Connection block, and 7 is technique swing arm, and 8 is air draft
Mouthful, 9 is technique nozzle, and 10 is removal waste fluid mouthful, and 11 is wafer, and 12 is cavity cover, and 13 are
Collection cups, 14 is spindle motor.
Specific embodiment
The invention will be further described below in conjunction with the accompanying drawings.
As shown in Figure 1 and Figure 2, it is of the invention to realize that device includes process cavity 5, cavity cover
12nd, spindle motor 14, collection cups 13, wafer-supporting platform, cleaning swing arm 4, swing arm nozzle 3, work
Skill swing arm 7 and technique nozzle 9, wherein collection cups 13 are arranged in process cavity 5, at this
The wafer-supporting platform for carrying wafer 11 is provided with collection cups 13, spindle motor 14 is fixed on process cavity
The lower section of body 5, and be connected with wafer-supporting platform, drive wafer-supporting platform to drive wafer 11 to rotate.Cleaning
Swing arm 4 and technique swing arm 7 are rotationally connected with process cavity by swing arm Rotary Connection block 6 respectively
5 the same side, sprinkling cleaning fluid is separately installed with the cleaning swing arm 4 and technique swing arm 7
Swing arm nozzle 3 and chemigation technique nozzle 9.The transparent sealing of cavity cover 12 connects
The top of process cavity 5 is connected to, the reaction cavity of closing is formed.
Nozzle contiguous block 2 and exhaust outlet 8 are separately installed with the relative both sides of process cavity 5,
Both sides where gas nozzle 1 and exhaust outlet 8 are located at cleaning swing arm 4 and technique swing arm 7 is installed
The both sides of side, the two ends of exhaust outlet 8 are located inside and outside process cavity 5 respectively.Nozzle is connected
Block 2 is located near the side of cleaning swing arm 4, and multiple is evenly equipped with nozzle contiguous block 2 to work
The gas nozzle 1 of gas is sprayed in skill cavity 5, the gas that each gas nozzle 1 sprays is by brilliant
Above circle 11, extracted out by the exhaust outlet 8 of opposite side, and then water is formed in process cavity 5
The dynamic airflow field of advection.It is mounted on adjusting gas on the pipeline that each gas nozzle 1 is connected
The valve of flow, the gas that gas nozzle 1 sprays can adjust different flows to change technique
The internal pressure of cavity 5 it is positive and negative.
Implementation method of the invention is：
When technique is carried out, spindle motor 14 drives be loaded with wafer 11 to hold piece to process cavity 5
Platform rotates, and technique swing arm 7 goes to the top of wafer 11, starts sprinklingization with technique nozzle 9
Learn liquid；Meanwhile, each gas nozzle 1 on the nozzle contiguous block 2 of the side of process cavity 5
Open, to gas (can be nitrogen) is sprayed into process cavity 5, air-flow is by the top of wafer 11
Afterwards, discharged by positioned at the exhaust outlet 8 of the opposite side of process cavity 5, inside the process cavity 5
Form the airflow field of bottom horizontal flow sheet；After technique terminates, technique swing arm 7 is multiple with technique nozzle 9
Position, cleaning swing arm 4 goes to the top of wafer 11, starts to spray cleaning fluid with swing arm nozzle 3
Cleaned, after cleaning, cleaning swing arm 4 resets with swing arm nozzle 3, each gas nozzle 1
Stop jet.When the gas that each gas nozzle 1 sprays blows over cleaning swing arm 4 and swing arm nozzle 3,
The superincumbent chemical liquids of backwash can be blown off, it is to avoid cleaning swing arm 4 chemical drop when being cleaned
Fall on the surface of wafer 11.
The angle and flow of gas are sprayed by adjusting gas nozzle 1, adjustment cavity can be played
The effect of air pressure inside.The quantity and spacing of gas nozzle of the present invention 1 can be entered according to actual needs
Row change.
While 8 gas bleeding of exhaust outlet, the steam inside process cavity can be also taken away, adjusted
Humidity in whole process cavity.
Claims (5)
1. a kind of technological reaction cavity airflow field realizes device, including process cavity, cavity
Cover, spindle motor, collection cups, wafer-supporting platform, cleaning swing arm, swing arm nozzle, technique swing arm and
Technique nozzle, wherein collection cups are arranged in the process cavity, are provided with the collection cups and held
Carry wafer the wafer-supporting platform, the spindle motor be arranged on process cavity lower section, and with it is described
Wafer-supporting platform is connected, drives wafer-supporting platform to drive wafer rotation；The cleaning swing arm and technique swing arm point
The homonymy of process cavity is not rotationally connected with, is respectively mounted in the cleaning swing arm and technique swing arm
There are the swing arm nozzle of sprinkling cleaning fluid and the technique nozzle of chemigation；The cavity cover sealing
It is connected to process cavity top；It is characterized in that：The relative both sides of the process cavity (5)
Nozzle contiguous block (2) and exhaust outlet (8) are separately installed with, the nozzle contiguous block (2) is located at
Near the side of cleaning swing arm (4), it is evenly equipped with the nozzle contiguous block (2) many
The individual gas nozzle (1) to ejection gas in process cavity (5), each gas nozzle (1)
The gas of ejection is by the wafer (11) top, by the exhaust outlet (8) of opposite side
Extract out, the airflow field of bottom horizontal flow sheet is formed in the process cavity (5).
2. the technological reaction cavity airflow field as described in claim 1 realizes device, its feature
It is：Both sides where the gas nozzle (1) and exhaust outlet (8) are located at cleaning swing arm (4)
And the both sides of technique swing arm (7) installation side, the two ends of the exhaust outlet (8) are located at work respectively
Inside and outside skill cavity (5).
3. the technological reaction cavity airflow field as described in claim 1 realizes device, its feature
It is：Adjusting gas flow is mounted on the pipeline that each gas nozzle (1) is connected
Valve.
4. one kind technological reaction cavity airflow field as described in claim 1,2 or 3 realizes device
Implementation method, it is characterised in that：The spindle motor (14) drives and is loaded with wafer (11)
Wafer-supporting platform rotation, the technique swing arm (7) goes to the wafer with technique nozzle (9)
(11) top, beginning chemigation；Meanwhile, positioned at the institute of process cavity (5) side
Each gas nozzle (1) stated on nozzle contiguous block (2) is opened, to the process cavity (5)
Interior penetrating gas, air-flow by the wafer (11) top after, by positioned at the process cavity
(5) exhaust outlet (8) discharge of opposite side, level is internally formed in the process cavity (5)
The airflow field of flowing；After technique terminates, the technique swing arm (7) is with technique nozzle (9)
Reset, cleaning swing arm (4) is gone on the wafer (11) with swing arm nozzle (3)
Just, start sprinkling cleaning fluid to be cleaned, after cleaning, cleaning swing arm (4) is with pendulum
Arm nozzle (3) resets, and each gas nozzle (1) stops jet.
5. the implementation method as described in claim 4, it is characterised in that：Each gas spray
When the gas that mouth (1) sprays blows over cleaning swing arm (4) and swing arm nozzle (3), backwash exists
Chemical liquids above can be blown off, it is to avoid chemical liquids drippage when cleaning swing arm (4) is cleaned
On the surface of wafer (11).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510796966.5A CN106711062B (en) | 2015-11-17 | 2015-11-17 | A kind of realization device and its implementation of technological reaction cavity airflow field |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510796966.5A CN106711062B (en) | 2015-11-17 | 2015-11-17 | A kind of realization device and its implementation of technological reaction cavity airflow field |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106711062A true CN106711062A (en) | 2017-05-24 |
| CN106711062B CN106711062B (en) | 2019-07-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510796966.5A Active CN106711062B (en) | 2015-11-17 | 2015-11-17 | A kind of realization device and its implementation of technological reaction cavity airflow field |
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| CN (1) | CN106711062B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109712865A (en) * | 2018-12-27 | 2019-05-03 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | A kind of wet chemical etching technique device and wet chemical etch process |
| CN111937128A (en) * | 2018-02-19 | 2020-11-13 | 东京毅力科创美国制造与工程公司 | Microelectronic processing system with controllable beam size processing spray |
| CN112582305A (en) * | 2020-12-04 | 2021-03-30 | 联合微电子中心有限责任公司 | Single-wafer type wet cleaning device and cleaning method thereof |
| CN112693228A (en) * | 2020-12-30 | 2021-04-23 | 大族激光科技产业集团股份有限公司 | Rotary liquid injection device and laser processing device |
| CN113488413A (en) * | 2021-07-06 | 2021-10-08 | 华海清科股份有限公司 | Wafer post-processing equipment and ventilation system with flow guide function and applied by same |
| CN114613702A (en) * | 2022-03-25 | 2022-06-10 | 智程半导体设备科技(昆山)有限公司 | Single wafer type wafer cleaning device |
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| US20150020850A1 (en) * | 2013-07-16 | 2015-01-22 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus and substrate processing method |
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| CN1908819A (en) * | 2005-08-03 | 2007-02-07 | 东京毅力科创株式会社 | Developing treatment apparatus and developing treatment method |
| CN101101858A (en) * | 2006-07-06 | 2008-01-09 | 大日本网目版制造株式会社 | Substrate treatment method and substrate treatment apparatus |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111937128A (en) * | 2018-02-19 | 2020-11-13 | 东京毅力科创美国制造与工程公司 | Microelectronic processing system with controllable beam size processing spray |
| CN109712865A (en) * | 2018-12-27 | 2019-05-03 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | A kind of wet chemical etching technique device and wet chemical etch process |
| CN112582305A (en) * | 2020-12-04 | 2021-03-30 | 联合微电子中心有限责任公司 | Single-wafer type wet cleaning device and cleaning method thereof |
| CN112693228A (en) * | 2020-12-30 | 2021-04-23 | 大族激光科技产业集团股份有限公司 | Rotary liquid injection device and laser processing device |
| CN112693228B (en) * | 2020-12-30 | 2022-04-19 | 大族激光科技产业集团股份有限公司 | Rotary liquid injection device and laser processing device |
| CN113488413A (en) * | 2021-07-06 | 2021-10-08 | 华海清科股份有限公司 | Wafer post-processing equipment and ventilation system with flow guide function and applied by same |
| CN114613702A (en) * | 2022-03-25 | 2022-06-10 | 智程半导体设备科技(昆山)有限公司 | Single wafer type wafer cleaning device |
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| CN106711062B (en) | 2019-07-12 |
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Address after: 110168 No. 16 Feiyun Road, Hunnan District, Shenyang City, Liaoning Province Applicant after: Shenyang Core Source Microelectronic Equipment Co., Ltd. Address before: 110168 No. 16 Feiyun Road, Hunnan New District, Shenyang City, Liaoning Province Applicant before: Shenyang Siayuan Electronic Equipment Co., Ltd. |
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