CN106707696A - Detection method for wavefront aberrations and best focal plane of lithographic projection objective - Google Patents

Detection method for wavefront aberrations and best focal plane of lithographic projection objective Download PDF

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CN106707696A
CN106707696A CN201611214860.0A CN201611214860A CN106707696A CN 106707696 A CN106707696 A CN 106707696A CN 201611214860 A CN201611214860 A CN 201611214860A CN 106707696 A CN106707696 A CN 106707696A
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focal plane
wave aberration
delta
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CN106707696B (en
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许嘉俊
刘志祥
邢廷文
林妩媚
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Institute of Optics and Electronics of CAS
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Institute of Optics and Electronics of CAS
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement

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  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
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Abstract

The invention provides a detection method for wavefront aberrations and a best focal plane of a lithographic projection objective. The method comprises the following steps: firstly, measuring wavefront aberrations of multiple view field points of the lithographic projection lens in two different focal plane positions, then fitting the wavefront aberrations of the view field points into a polynomial combination, analyzing characteristics of various coefficients of a fitting polynomial with changes of the focal plane positions to calculate the best focal position of each view field point, finally, averaging the best focal positions of the view field points to obtain a best focal plane position of the lithographic projection objective, then calculating the offset between the best focal plane position and a measured focal plane position to obtain the wavefront aberrations of the view field points in the best focal plane position. According to the invention, the wavefront aberrations of the view field points in the two different focal plane positions can be measured to detect the best focal plane of the lithographic projection objective and further obtain the wavefront aberrations of the view field points in the best focal plane position. Furthermore, the detection method for the wavefront aberrations and the best focal plane of the lithographic projection objective has the characteristics of easy realization, high efficiency and high precision.

Description

The detection method of wave aberration of photoetching projection objective and optimal focal plane
Technical field
The invention belongs to the technical field of photoetching, and in particular to the detection side of wave aberration of photoetching projection objective and optimal focal plane Method.
Background technology
The prosperity of IC industry is closely related with developing rapidly for photoetching technique, higher and higher integrated level requirement system Make the continuous lifting of level of processing.Litho machine as the key equipment in integrated circuit production process, by the circuit on mask plate Structure is reprinted books in a reduce format onto silicon chip face, and its image quality directly determines the physical size of individual devices.Therefore, in lithographic projection camera lens , it is necessary to be detected to its wave aberration on optimal imaging focal plane after the system integration, to evaluate the imaging level of the camera lens.
The detection of photoetching projection objective lens optimal imaging focal plane, a class method by special mask image different into image position Exposure is put, is judged that the method is more complicated according to exposure lines definition, time-consuming long, real-time is poor.Patent Method described in CN102455247A, is substituted using image device and exposed, and by image procossing, is found imaging and is most clearly put down Face, as optimal focal plane, but can not detect to wave aberration.Method described in patent CN103744269A, can be simultaneously Detection optimal focal plane and wave aberration, but still need in multiple position of focal plane iteration.Patent CN101799640A proposes one The method of kind, it is only necessary to measure wave aberration on three different focal planes of each visual field point, it becomes possible to calculate optimal focal plane, and optimal Wave aberration is detected on focal plane, both can not be carried out simultaneously.
The content of the invention
It is an object of the invention to provide a kind of wave aberration of photoetching projection objective and the detection method of optimal focal plane, by measurement The wave aberration of the different positions of focal plane of some visual field points of photoetching projection objective lens two, calculates at optimal focal plane position and optimal focal plane Wave aberration.
Technical solution of the invention is as follows：
A kind of detection method of wave aberration of photoetching projection objective and optimal focal plane, the method measures some visual field points two not With the wave aberration of position of focal plane, wave aberration is fitted using Polynomial combination, each visual field point pinpointed focus is calculated, so as to obtain photoetching Wave aberration at optimal focal plane of projection objective and optimal focal plane, specific detecting step is as follows：
Step S1：N number of visual field point is chosen in the true field of photoetching projection objective lens；
Step S2：Mobile wave aberration detector, finds the picture point of visual field i；
Step S3：In focal plane FiPosition measurement picture point wave aberration Wi, it is fitted to M multinomial (Z1,Z2,…,ZM) combination, its Multinomial coefficient is (C1i,C2i,…,CMi)；In focal plane Fi' position measurement picture point wave aberration Wi', it is fitted to M multinomial (Z1, Z2,…,ZM) combination, its multinomial coefficient is (C '1i,C′2i,…,C′Mi)。
Step S4：Image space introduces a certain amount of focal plane change △ F, the wave aberration W on emergent pupil face for bringingdefocusCan To be expressed as：
Wherein, NA and ρ are respectively the normalization radius on the numerical aperture of photoetching projection objective lens and emergent pupil.
As △ F=1, wave aberration is with M multinomial ZnExpression, has：
Then focal plane change introduces wave aberration WdefocusCan be expressed as：
In step S3, the focal plane for measuring twice is △ F with the position skew of optimal focal planeiWith △ Fi', then have：
The first formula subtracts the second formula and obtains above：
By △ Fi′-△Fi=Fi′-FiBring above formula into, contrast each term coefficient, obtain M equation：
cni·(Fi′-Fi)=C 'ni-Cni, n=1,2 ..., M
Can now solve：
cni=(C 'ni-Cni)/(Fi′-Fi), n=1,2 ..., M
Defined function std (x) is the standard deviation for solving x, sets up object function Merit：
Wherein,Item is M multinomial coefficient of known position of focal plane wave aberration,Item is inclined for focal plane Move the wave aberration change that δ is introduced.If the distance between known position of focal plane and optimal focal plane are δ0, then have：
Function Merit (C ' now1,C′2,C′3,…,C′M；δ0) value had both been the wave aberration at the visual field point optimal focal plane RMS value.By focal plane FiThe wave aberration M multinomial coefficient that ' place tries to achieve brings object function Merit solutions into, obtains δ=δi, then should Visual field optimal focus position BFi'=Fi′+δi。
Step S5：Wave aberration detector is moved at next picture point, repeat step S3-S4, until traveling through all visual fields Point.Optimal focal plane BF can be obtained by following formula：
Wave aberration (the W of each visual field point in optimal focal plane1,W2,…,WM) can be obtained by following formula：
Beneficial effects of the present invention：Only need to be measured in two different positions of focal plane of some visual field points, it becomes possible to count The wave aberration at optimal focal plane position and optimal focal plane is calculated, detection efficiency is improve.
Brief description of the drawings
Fig. 1 is the wave aberration of photoetching projection objective and optimal focal plane detecting system structural representation that the present invention is used, wherein, 1 is light source, and 2 is illuminator, and 3 is mask plate, and 4 is photoetching projection objective lens, and 5 is wave aberration detector, and 6 move for precision three-dimensional Platform；
Fig. 2 is wave aberration of photoetching projection objective of the present invention and optimal focal plane overhaul flow chart.
Specific embodiment
To make the object, technical solutions and advantages of the present invention become more apparent, below in conjunction with specific embodiment, and reference Accompanying drawing, the present invention is described in more detail.
Wave aberration of photoetching projection objective as shown in Figure 1 and optimal focal plane detecting system structural representation, including light source 1, photograph Bright system 2, mask plate 3, photoetching projection objective lens 4, wave aberration detector 5 and precision three-dimensional motion platform 6, the photograph that light source 1 sends Mingguang City's beam is by after the modulation of illuminator 2, being irradiated on mask plate 3.The selectivity of mask plate 3 passes through a series of light, by light The picture point that projection objective 4 forms different visual fields is carved, is received by wave aberration detector 5.Wave aberration detector 5 is arranged on accurate three On maintenance and operation moving platform 6, three motions of orthogonal direction can be produced.
Wave aberration of photoetching projection objective of the present invention as shown in Figure 2 and optimal focal plane detection method flow chart, including with Lower step：
Step S1：11 visual field points are chosen in the true field of photoetching projection objective lens；
Step S2：Mobile wave aberration detector, finds the picture point of visual field i；
Step S3：In focal plane FiPosition measurement picture point wave aberration Wi, it is fitted to 37 Zernike Fringe multinomials (Z1, Z2,…,Z37) combination, its multinomial coefficient is (C1i,C2i,…,C37i)；In focal plane Fi' position measurement picture point wave aberration Wi, fitting It is M multinomial (Z1,Z2,…,Z37) combination, its multinomial coefficient is (C '1i,C′2i,…,C′37i)。
Step S4：Design factor cni：
cni=(C 'ni-Cni)/(Fi′-Fi), n=1,2 ..., M
Defined function std (x) is the standard deviation for solving x, sets up object function Merit：
Solve equation：
Obtain δ=δi, then visual field optimal focus position BFi'=Fi′+δi。
Step S5：Wave aberration detector is moved at next picture point, repeat step S3-S4, until traveling through 11 visual fields Point.Optimal focal plane BF can be obtained by following formula：
Wave aberration (the W of each visual field point in optimal focal plane1,W2,…,WM) can be obtained by following formula：
The above, the only specific embodiment in the present invention, but protection scope of the present invention is not limited thereto, and appoints What be familiar with the people of the technology disclosed herein technical scope in, it will be appreciated that the conversion or replacement expected, should all cover It is of the invention include within the scope of, therefore, protection scope of the present invention should be defined by the protection domain of claims.

Claims (2)

1. the detection method of a kind of wave aberration of photoetching projection objective and optimal focal plane, it is characterised in that：The method measurement is some to be regarded The wave aberration of the different positions of focal plane of site two, wave aberration is fitted using Polynomial combination, calculates each visual field point pinpointed focus, from And the wave aberration at photoetching projection objective lens optimal focal plane and optimal focal plane is obtained, specific detecting step is as follows：
Step S1：N number of visual field point is chosen in the true field of photoetching projection objective lens；
Step S2：Mobile wave aberration detector, finds the picture point of visual field i；
Step S3：In focal plane FiPosition measurement picture point wave aberration Wi, it is fitted to M multinomial (Z1,Z2,…,ZM) combination, its is multinomial Formula coefficient is (C1i,C2i,…,CMi)；In focal plane F 'iPosition measurement picture point wave aberration Wi', it is fitted to M multinomial (Z1, Z2,…,ZM) combination, its multinomial coefficient is (C '1i,C′2i,…,CMi)；
Step S4：Image space introduces a certain amount of focal plane change △ F, the wave aberration W on emergent pupil face for bringingdefocusCan be with table It is shown as：
W d e f o c u s = ( 1 - 1 - ( N A · ρ ) 2 ) · Δ F
Wherein, NA and ρ are respectively the normalization radius on the numerical aperture of photoetching projection objective lens and emergent pupil；
As △ F=1, wave aberration is with M multinomial ZnExpression, has：
W d e f o c u s | Δ F = 1 = 1 - 1 - ( N A · ρ ) 2 = Σ n = 1 M c n Z n
Then focal plane change introduces wave aberration WdefocusCan be expressed as：
W d e f o c u s = ( Σ n = 1 M c n Z n ) · Δ F = Σ n = 1 M ( c n · Δ F ) Z n
In step S3, the focal plane for measuring twice is △ F with the position skew of optimal focal planeiWith △ Fi', then have：
W d e f o c u s | Δ F = ΔF i = Σ n = 1 M ( c n i · ΔF i ) · Z n = Σ n = 1 M C n i · Z n
W d e f o c u s | Δ F = ΔF i ′ = Σ n = 1 M ( c n i · ΔF i ′ ) · Z n = Σ n = 1 M C n i ′ · Z n
The first formula subtracts the second formula and obtains above：
Σ n = 1 M c n i · ( ΔF i ′ - ΔF i ) · Z n = Σ n = 1 M ( C n i ′ - C n i ) · Z n
By △ Fi′-△Fi=Fi′-FiBring above formula into, contrast each term coefficient, obtain M equation：
cni·(Fi′-Fi)=C 'ni-Cni, n=1,2 ..., M
Can now solve：
cni=(C 'ni-Cni)/(Fi′-Fi), n=1,2 ..., M
Defined function std (x) is the standard deviation for solving x, sets up object function Merit：
M e r i t ( C 1 ′ , C 2 ′ , C 3 ′ , ... , C M ′ ; δ ) = s t d ( Σ n = 1 M C n ′ Z n - Σ n = 1 M ( c n i · δ ) Z n )
Wherein,Item is M multinomial coefficient of known position of focal plane wave aberration,Item draws for focal plane shift δ The wave aberration change for entering, if the distance between known position of focal plane and optimal focal plane are δ0, then have：
d { M e r i t ( C 1 ′ , C 2 ′ , C 3 ′ , ... , C M ′ ; δ ) } d δ | δ = δ 0 = 0
Function Merit (C ' now1,C′2,C′3,…,C′M；δ0) value had both been the wave aberration RMS at the visual field point optimal focal plane Value, by focal plane FiThe wave aberration M multinomial coefficient that ' place tries to achieve brings object function Merit solutions into, obtains δ=δi, then this regard Optimal focus position BFi'=Fi′+δi；
Step S5：Wave aberration detector is moved at next picture point, repeat step S3-S4, until traveling through all visual field points, most Good focal plane BF can be obtained by following formula：
B F = Σ i = 1 N BF i ′ N
Wave aberration (the W of each visual field point in optimal focal plane1,W2,…,WM) can be obtained by following formula：
W i = Σ n = 1 M C n i ′ Z n - Σ n = 1 M [ c n i · ( B F - F i ′ ) ] Z n , i = 1 , 2 , 3 , ... , N .
2. the detection method of wave aberration of photoetching projection objective according to claim 1 and optimal focal plane, it is characterised in that：Intend Close multinomial (Z1,Z2,…,ZM) it is that emergent pupil face up-samples the function for putting position coordinates, its item number M will by wave aberration certainty of measurement Ask setting.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113049228A (en) * 2021-03-22 2021-06-29 中国科学院上海光学精密机械研究所 Objective wave aberration detection device and detection method
CN113124751A (en) * 2019-12-31 2021-07-16 上海微电子装备（集团）股份有限公司 Scattering measurement device and method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101799640A (en) * 2010-03-10 2010-08-11 中国科学院光电技术研究所 Device and method for determining optimal focal plane position of lithography machine
US20100233636A1 (en) * 2009-03-10 2010-09-16 Canon Kabushiki Kaisha Measurement apparatus, exposure apparatus, and method of manufacturing device
CN103744269A (en) * 2014-01-03 2014-04-23 中国科学院上海光学精密机械研究所 Detection method of wave aberration and optical imaging focal plane of photoetching projection objective
CN104181779A (en) * 2014-09-05 2014-12-03 中国科学院光电技术研究所 Wave aberration detection device for optical system
CN105319869A (en) * 2015-11-12 2016-02-10 中国科学院上海光学精密机械研究所 In-situ detection method for projection objective polarization aberration of photoetching machine
WO2016169890A1 (en) * 2015-04-20 2016-10-27 Asml Netherlands B.V. Lithographic method and apparatus

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100233636A1 (en) * 2009-03-10 2010-09-16 Canon Kabushiki Kaisha Measurement apparatus, exposure apparatus, and method of manufacturing device
CN101799640A (en) * 2010-03-10 2010-08-11 中国科学院光电技术研究所 Device and method for determining optimal focal plane position of lithography machine
CN103744269A (en) * 2014-01-03 2014-04-23 中国科学院上海光学精密机械研究所 Detection method of wave aberration and optical imaging focal plane of photoetching projection objective
CN104181779A (en) * 2014-09-05 2014-12-03 中国科学院光电技术研究所 Wave aberration detection device for optical system
WO2016169890A1 (en) * 2015-04-20 2016-10-27 Asml Netherlands B.V. Lithographic method and apparatus
CN105319869A (en) * 2015-11-12 2016-02-10 中国科学院上海光学精密机械研究所 In-situ detection method for projection objective polarization aberration of photoetching machine

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
刘志祥 等: "一维相移剪切干涉仪的调制度函数分析", 《激光与光电子学进展》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113124751A (en) * 2019-12-31 2021-07-16 上海微电子装备（集团）股份有限公司 Scattering measurement device and method
CN113049228A (en) * 2021-03-22 2021-06-29 中国科学院上海光学精密机械研究所 Objective wave aberration detection device and detection method

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