CN106682319A - Bipolar-transistor displacement-effect numerical simulation method - Google Patents
Bipolar-transistor displacement-effect numerical simulation method Download PDFInfo
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Abstract
The invention belongs to the technical field of numerical simulation of radiation effect and relates to a bipolar-transistor displacement-effect numerical simulation method. The method starts from measured data of bipolar-transistor displacement damage defects after neutron irradiation, a displacement damage defect model is established, and numerical simulation of neutron displacement effect is completed. With the method, physical limitation of neutron displacement effect cannot be reflected completely with an existing minority carrier life method is broken through, association between bipolar-resistor micro electrical characteristics and microscopic displacement damage defects is established at the same time, and effective means can be provided for deep analysis of influence of the displacement damage defects on internal carrier transport process of transistors.
Description
Technical field
The invention belongs to radiation effect numerical simulation technology field, is related to a kind of bipolar transistor displacement effect Numerical-Mode
Plan method.
Background technology
Neutron irradiation can cause displacement damage effect in bipolar transistor.Displacement loss effect is mainly neutron and passes through
Elastic scattering collision, makes target atom core obtain enough energy and leave its lattice position, in partly leading for composition bipolar transistor
Displacement damage defect is produced in body material, causes transistor current gain to decline, caused transistor performance to be degenerated even and fail.
Carry out the numerical simulation of bipolar transistor neutron displacement effect, can imitate from the analysis of transistor device physical layer
Phenomenon rule and micromechanism are answered, is that the important technology of bipolar transistor anti-neutron radiation Design of Reinforcement is supported.It is existing double
Bipolar transistor neutron displacement effect method for numerical simulation is mainly minority carrier lifetime method.Minority in semi-conducting material is carried
The relation flowed between sub- life-span and incident neutron fluence is shown below：
In formula, τr0For the minority carrier lifetime before neutron irradiation；τrFor the minority carrier lifetime after neutron irradiation；Φ
For incident neutron fluence；KrFor minority carrier lifetime Damage coefficient.Minority carrier lifetime method is calculated according to (1) formula
The minority carrier lifetime of the semi-conducting material of composition bipolar transistor, completes right by setting up minority carrier lifetime model
The numerical simulation of transistor neutron displacement effect.Remove in semi-conducting material minority carrier lifetime as neutron irradiation can also cause
Outside other electrical parameters (such as effective doping content, carrier mobility etc.) change, thus the method can not be completely anti-
The physics reality of neutron displacement effect is reflected, with certain limitation.
The content of the invention
Neutron displacement effect physics reality can not be reflected completely in order to solve existing displacement effect method for numerical simulation
Technical problem, the present invention provide a kind of bipolar transistor displacement effect method for numerical simulation.The method is double from after neutron irradiation
The measured data of bipolar transistor displacement damage defect is set out, and sets up displacement damage defect model, completes neutron displacement effect
Numerical simulation.
The present invention technical solution be：A kind of bipolar transistor displacement effect method for numerical simulation, its it is special it
Place is：Comprise the following steps：
1) neutron irradiation is carried out to bipolar transistor；
2) base current of bipolar transistor, collector current, common-emitter current gain after neutron irradiation are surveyed
Examination；
3) test of neutron displacement damage defect parameters is carried out to bipolar transistor after neutron irradiation；
4) foundation of bipolar transistor displacement damage defect model：Based on Schockley-Reed-Hall Carrier recombination reason
By setting up bipolar transistor displacement damage defect model, using step 3) the neutron displacement damage defect parameters that measure are
Model parameter assignment；
5) after neutron irradiation, the simulation of bipolar transistor electrology characteristic is calculated：In semiconductor device simulation software, build
The device architecture of vertical bipolar transistor, it is based on bipolar transistor displacement damage defect model, bipolar after development neutron irradiation
The numerical simulation of transistor npn npn electrology characteristic, the base current of calculating transistor, collector current, common-emitter current gain；
6) test data and the contrast for simulating calculating data：By step 5) simulate calculated data and step 2) middle survey
The data that examination is obtained are contrasted；If comparing result is inconsistent, execution step is 7)；If comparing result is consistent, execution step
8)；
7) set-up procedure 4) in model parameter assignment and continue executing with step 5)；
8) terminate bipolar transistor displacement effect numerical simulation, obtain the displacement damage defect model of bipolar transistor
And model parameter.
Preferably, step 1) in bipolar transistor be the common-emitter current gain filtered out after parameter testing
Multiple bipolar transistors of the relative standard deviation within 5%.
Preferably, step 1) in carry out neutron irradiation during, the pin of bipolar transistor whole short circuit.
Preferably, step 3) in the test of neutron displacement damage defect parameters that carries out be the collection for choosing bipolar transistor
PN junction of the electrode-base junction as test, test obtain the deep level transient spectroscopy of bipolar transistor；The neutron displacement of test
Damage defect parameter includes level of energy E of the displacement damage defect in forbidden bandt, defect concentration NtAnd prisoner of the defect to electronics
Obtain section σnWith capture cross-section σ of the defect to holep；Ask for the neutron displacement damage defect parameters of many bipolar transistors
Meansigma methodss and its standard deviation, including defect concentration meansigma methodssAnd standard deviationDefect is average to the capture cross-section of electronics
ValueAnd standard deviationCapture cross-section meansigma methodss of the defect to holeAnd standard deviation
Preferably, step 4) in set up bipolar transistor displacement damage defect model be：
Wherein, RtBe level of energy in forbidden band be EtThe Carrier recombination rate that causes of displacement damage defect；N is flat
Weighing apparatus electron concentration, p are balance hole concentration, niFor intrinsic carrier concentration, nlFor defect level EtIn electron concentration, plFor
Defect level EtIn hole concentration, τnFor electronics as the minority carrier period of the day from 11 p.m. to 1 a.m life-span, τpIt is hole as the minority carrier period of the day from 11 p.m. to 1 a.m
Life-span, vthFor carrier heat movement speed, NcFor conduction band effective density of states, NvFor valence band effective density of states, k is Bohr
Hereby graceful constant, T is temperature, NtFor defect concentration, σnFor capture cross-section of the defect to electronics, σpCut for capture of the defect to hole
Face；
Using the defect concentration meansigma methodss of many bipolar transistorsCapture cross-section meansigma methodss of the defect to electronicsWith
Capture cross-section meansigma methodss of the defect to holeModel parameter assignment is carried out for bipolar transistor displacement damage defect model.
Preferably, step 6) in the conforming criterion of comparing result be：The common emitter electricity that numerical simulation calculation is obtained
The relative standard deviation of common-emitter current gain meansigma methodss that flow enhancement is obtained with actual measurement whether within 5%, numerical simulation meter
Whether the base current that obtains, the curve shape of collector current are consistent with measured curve.
Preferably, step 7) in the adjusting range of model parameter assignment be
The beneficial effects of the present invention is：
(1) measured data of the present invention based on bipolar transistor displacement damage defect after neutron irradiation, sets up displacement damage
Hinder defect model, complete the numerical simulation of neutron displacement effect, breaching existing minority carrier lifetime method can not reflect completely
The actual limitation of neutron displacement effect physics.
(2) present invention can set up contacting between bipolar transistor macroscopic view electrology characteristic and microcosmic displacement damage defect,
Effective means can be provided to analyse in depth impact of the displacement damage defect to transistor internal carrier transport process.
Description of the drawings
Method flow diagrams of the Fig. 1 for present pre-ferred embodiments.
Deep level transient spectroscopies of the Fig. 2 for the bipolar transistor of present pre-ferred embodiments.
Neutron displacement damage defect parameters test results of the Fig. 3 for the bipolar transistor of present pre-ferred embodiments.
The device architecture of bipolar transistors of the Fig. 4 to set up in the quasiconductor simulation software of present pre-ferred embodiments.
The electrology characteristic numerical simulation result of the bipolar transistor of Fig. 5 present pre-ferred embodiments.
Specific embodiment
Deep level transient spectroscopy (DLTS) measuring technology is the effective means of deep energy level defect detection in semi-conducting material.Using
Deep level transient spectroscopy measuring technology is tested to the semi-conducting material for constituting bipolar transistor, after can obtaining neutron irradiation
The displacement damage defect parameters of formation, obtain the actual measured data of reflection neutron displacement effect physics.
The techniqueflow chart of the present invention is as shown in Figure 1.Neutron irradiation is carried out to bipolar transistor first, depth is then based on
Energy level Transient spectrum measuring technology, completes the test of neutron displacement damage defect parameters, resettles displacement damage defect model, completes
The electrology characteristic numerical simulation of bipolar transistor displacement effect, analog result is contrasted with test result, and displacement is damaged
Hinder defect model to be modified, until analog result it is consistent with test result.Concrete link is described below：
1st, the bipolar transistor of the same batch of same production technology is selected, the parameter that predose is carried out to transistor is surveyed
Examination, the common-emitter current gain of test transistor filter out crystalline substance of the relative standard deviation of common-emitter current gain within 5%
Body pipe is used as irradiation sample.
2nd, in irradiation sample 6 bipolar transistors are selected to carry out neutron irradiation experiment in reactor, in irradiation process
The pin whole short circuit of transistor.
3rd, based on deep level transient spectroscopy measuring technology, choose collector-base junction (BC knots) conduct of bipolar transistor
The PN junction of test, carries out the test of neutron displacement damage defect parameters to the bipolar transistor after irradiation, obtains transistor
Level of energy E in forbidden band of deep level transient spectroscopy, displacement damage defectt, defect concentration NtAnd capture of the defect to electronics
Section σnWith the capture cross-section σ in holep, ask for the meansigma methodss and standard deviation of 6 transistor illness parameters, including defect concentration
Meansigma methodssAnd standard deviationCapture cross-section meansigma methodss of the defect to electronicsAnd standard deviationDefect is to hole
Capture cross-section meansigma methodssAnd standard deviationThe deep level transient spectroscopy and neutron displacement damage of typical bipolar transistor npn npn lacks
Sunken parameter testing result is as shown in Figures 2 and 3.
4th, it is theoretical based on Schockley-Reed-Hall (SRH) Carrier recombination, set up bipolar transistor displacement damage and lack
Sunken model.For the level of energy in forbidden band is EtDisplacement damage defect, Carrier recombination rate R for causingtFor：
Wherein：
In formula, n is equilibrium electron concentration, and p is to balance hole concentration, niFor intrinsic carrier concentration, nlFor defect level Et
In electron concentration, plFor defect level EtIn hole concentration, τnFor electronics as the minority carrier period of the day from 11 p.m. to 1 a.m life-span, τpFor sky
Life-span of the cave as the minority carrier period of the day from 11 p.m. to 1 a.m, vthFor carrier heat movement speed, NcFor conduction band effective density of states, NvHave for valence band
Effect state density, k is Boltzmann constant, and T is temperature, NtFor defect concentration, σnFor capture cross-section of the defect to electronics, σpFor
Capture cross-section of the defect to hole.
The meansigma methodss of the 6 bipolar transistor defect parameters obtained using actual measurement are (for the level of energy in forbidden band
For EtDisplacement damage defect, defect concentration meansigma methodssCapture cross-section meansigma methodss of the defect to electronicsWith defect to hole
Capture cross-section meansigma methodss) for displacement damage defect model parameter assignment, complete the foundation of displacement damage defect model.
5th, the doping in semiconductor device simulation software, based on bipolar transistor emitter area, base and collecting zone
Concentration and size, sets up the device architecture of bipolar transistor, carries out numerical value to the electrology characteristic of bipolar transistor predose
Simulation, the common-emitter current gain that simulation is obtained is compared with the common-emitter current gain of 6 bipolar transistor predoses
Compared with completing the calibration of bipolar transistor device model in simulation software.The typical bipolar type set up in quasiconductor simulation software
The device architecture of transistor is as shown in Figure 4.
6th, the bipolar transistor displacement damage defect model of foundation is loaded onto in quasiconductor simulation software, to neutron spoke
Numerical simulation is carried out according to the electrology characteristic of rear transistor, the base current of calculating transistor, collector current, cascode electrode current increase
Benefit.
7th, the electrology characteristic after 6 bipolar transistor neutron irradiations is tested, the base current of test transistor,
Collector current, common-emitter current gain, ask for the meansigma methodss of 6 transistor common-emitter current gains.
8th, the data that the test data and numerical simulation calculation of bipolar transistor electrology characteristic after neutron irradiation are obtained
Contrasted, judged the common-emitter current gain meansigma methodss that the common-emitter current gain that numerical simulation calculation is obtained is obtained with actual measurement
Relative standard deviation whether within 5%, base current that numerical simulation calculation is obtained, the curve shape of collector current with
Whether measured curve is consistent.If meeting above-mentioned condition, flow process terminates, and the numerical simulation of displacement effect is completed；If being unsatisfactory for
Condition is stated, is then existed In the range of adjust
The model parameter assignment of displacement damage defect model, if the common-emitter current gain that numerical simulation calculation is obtained is obtained more than actual measurement
Common-emitter current gain meansigma methodss then increase the assignment of model parameter, if the common-emitter current gain that numerical simulation calculation is obtained
The common-emitter current gain meansigma methodss obtained less than actual measurement then reduce the assignment of model parameter, to displacement damage defect numerical simulation
Model is modified, repeat step 6 and 7, until numerical simulation result is consistent with test result.The electricity of typical bipolar transistor npn npn
Learn characteristics numerical simulation result as shown in Figure 5.
Claims (7)
1. a kind of bipolar transistor displacement effect method for numerical simulation, it is characterised in that：Comprise the following steps：
1) neutron irradiation is carried out to bipolar transistor；
2) base current of bipolar transistor, collector current, common-emitter current gain after neutron irradiation are tested；
3) test of neutron displacement damage defect parameters is carried out to bipolar transistor after neutron irradiation；
4) foundation of bipolar transistor displacement damage defect model：It is theoretical based on Schockley-Reed-Hall Carrier recombination,
Bipolar transistor displacement damage defect model is set up, using step 3) the neutron displacement damage defect parameters that measure are model
Parameter assignment；
5) after neutron irradiation, the simulation of bipolar transistor electrology characteristic is calculated：In semiconductor device simulation software, set up double
The device architecture of bipolar transistor, based on bipolar transistor displacement damage defect model, carries out ambipolar crystalline substance after neutron irradiation
The numerical simulation of body pipe electrology characteristic, the base current of calculating transistor, collector current, common-emitter current gain；
6) test data and the contrast for simulating calculating data：By step 5) the calculated data of simulation and step 2) in test
To data contrasted；If comparing result is inconsistent, execution step is 7)；If comparing result is consistent, execution step is 8)；
7) set-up procedure 4) in model parameter assignment and continue executing with step 5)；
8) terminate bipolar transistor displacement effect numerical simulation, obtain the displacement damage defect model and mould of bipolar transistor
Shape parameter.
2. bipolar transistor displacement effect method for numerical simulation according to claim 1, it is characterised in that：Step 1) in
Bipolar transistor be the relative standard deviation of the common-emitter current gain filtered out after parameter testing within 5%
Multiple bipolar transistors.
3. bipolar transistor displacement effect method for numerical simulation according to claim 2, it is characterised in that：Step 1) in
During carrying out neutron irradiation, the pin whole short circuit of bipolar transistor.
4. bipolar transistor displacement effect method for numerical simulation according to claim 3, it is characterised in that：Step 3) in
The test of the neutron displacement damage defect parameters for carrying out is the collector-base junction for choosing bipolar transistor as test
PN junction, test obtain the deep level transient spectroscopy of bipolar transistor；The neutron displacement damage defect parameters of test include that displacement is damaged
Hinder level of energy E of the defect in forbidden bandt, defect concentration NtAnd capture cross-section σ of the defect to electronicsnWith defect to hole
Capture cross-section σp；The meansigma methodss and its standard deviation of the neutron displacement damage defect parameters of many bipolar transistors are asked for, is wrapped
Include defect concentration meansigma methodssAnd standard deviationCapture cross-section meansigma methodss of the defect to electronicsAnd standard deviationLack
Fall into the capture cross-section meansigma methodss to holeAnd standard deviation
5. bipolar transistor displacement effect method for numerical simulation according to claim 4, it is characterised in that：Step 4) in
The bipolar transistor displacement damage defect model of foundation is：
Wherein, RtBe level of energy in forbidden band be EtThe Carrier recombination rate that causes of displacement damage defect；N is balance electricity
Sub- concentration, p are balance hole concentration, niFor intrinsic carrier concentration, nlFor defect level EtIn electron concentration, plFor defect
Energy level EtIn hole concentration, τnFor electronics as the minority carrier period of the day from 11 p.m. to 1 a.m life-span, τpFor hole as the minority carrier period of the day from 11 p.m. to 1 a.m longevity
Life, vthFor carrier heat movement speed, NcFor conduction band effective density of states, NvFor valence band effective density of states, k is Boltzmann
Constant, T is temperature, NtFor defect concentration, σnFor capture cross-section of the defect to electronics, σpFor capture cross-section of the defect to hole；
Using the defect concentration meansigma methodss of many bipolar transistorsCapture cross-section meansigma methodss of the defect to electronicsAnd defect
Capture cross-section meansigma methodss to holeModel parameter assignment is carried out for bipolar transistor displacement damage defect model.
6. bipolar transistor displacement effect method for numerical simulation according to claim 5, it is characterised in that：Step 6) in
The conforming criterion of comparing result is：The common emitter that the common-emitter current gain that numerical simulation calculation is obtained is obtained with actual measurement
The relative standard deviation of current gain meansigma methodss whether within 5%, base current that numerical simulation calculation is obtained, colelctor electrode electricity
Whether the curve shape of stream is consistent with measured curve.
7. bipolar transistor displacement effect method for numerical simulation according to claim 6, it is characterised in that：Step 7) in
The adjusting range of model parameter assignment is
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| CN110968960A (en) * | 2019-12-13 | 2020-04-07 | 西安电子科技大学 | Method and device for determining total dose effect defect model |
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| CN114068694A (en) * | 2021-11-11 | 2022-02-18 | 湘潭大学 | Method and system for testing charge collection resistance of germanium-silicon heterojunction bipolar transistor |
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| CN110968960A (en) * | 2019-12-13 | 2020-04-07 | 西安电子科技大学 | Method and device for determining total dose effect defect model |
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| CN111766496B (en) * | 2020-07-28 | 2022-11-25 | 哈尔滨工业大学 | Method for detecting displacement damage sensitive part of bipolar transistor |
| CN111855704A (en) * | 2020-07-28 | 2020-10-30 | 哈尔滨工业大学 | Method for detecting ionization damage sensitive part of bipolar transistor |
| CN111766496A (en) * | 2020-07-28 | 2020-10-13 | 哈尔滨工业大学 | Method for detecting displacement damage sensitive part of bipolar transistor |
| CN111855704B (en) * | 2020-07-28 | 2024-01-12 | 哈尔滨工业大学 | Method for detecting ionization damage sensitive part of bipolar transistor |
| CN114068694A (en) * | 2021-11-11 | 2022-02-18 | 湘潭大学 | Method and system for testing charge collection resistance of germanium-silicon heterojunction bipolar transistor |
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