CN109541670B - The measurement method of the equivalent neutron fluence of spallation neutron target 1MeV - Google Patents
The measurement method of the equivalent neutron fluence of spallation neutron target 1MeV Download PDFInfo
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Abstract
The invention belongs to radiation detection fields, are related to a kind of method of equivalent neutron fluence measurement of spallation neutron target 1MeV.The equivalent neutron fluence of 1MeV can not directly be provided and calculate the larger technical problem of equivalent fluence uncertainty by solving existing spallation neutron target neutron streaming, the method that the present invention uses is the feature in a linear relationship using bipolar junction transistor gain inverse and the equivalent neutron fluence of 1MeV, it realizes and the equivalent neutron fluence of spallation neutron target 1MeV is calculated based on damage factor of the equivalent neutron of reactor 1MeV on transverse structure transistor, this method can keep higher measurement accuracy within the scope of very wide neutron fluence.
Description
Technical field
The invention belongs to radiation detection field, it is related to a kind of transverse structure transistor displacement damage effect being utilized to carry out spallation
The method of the equivalent neutron fluence measurement of neutron source 1MeV.
Background technique
The devices such as spallation neutron target, accelerator for neutron production are capable of providing small throughput neutron irradiation environment and are used for scientific research,
Middle spallation neutron target is the large scientific facilities for studying neutrons characteristic, detecting material microstructure and movement, and spallation neutron target utilizes
High energy light charged particle bombard heavy nucleus, occur spallation reaction and generate a large amount of fast neutron, these neutrons pass through again moderator and
Become the very wide neutron of Energy distribution behind reflecting layer.Spallation neutron target does not use nuclear fuel, cleans and easily controllable；Its neutron beam
Flow pure, association gamma-rays dosage is extremely low.Therefore the neutron irradiation environment that spallation neutron target provides is very suitable for neutron detection
Device calibration, neutron single-particle effect study, the research of neutron displacement damage effect and the basic research of other field.
But the neutron irradiation environmental parameter that spallation neutron target and certain accelerator for neutron production devices provide is based on proton beam more
Flow the conversion of monitoring result, it is possible to which neutron streaming is in the loss for transporting link after having ignored proton beam target practice, and provides
Parameter be neutron population rather than the equivalent neutron fluence of 1MeV.The equivalent neutron note of 1MeV is scaled by neutron population and theoretical neutron spectra
During amount, and the uncertainty as caused by theoretical calculation power spectrum can be introduced.
Summary of the invention
In order to solve, existing spallation neutron target neutron streaming can not directly provide the equivalent neutron fluence of 1MeV and calculating is equivalent
The larger technical problem of fluence uncertainty, the present invention provide it is a kind of directly using transverse structure transistor displacement damage effect into
The method of the equivalent neutron fluence measurement of row spallation neutron target 1MeV.
Neutron and the main mechanism of semiconductor material interaction are displacement damage effects.Since neutron is not charged, penetrate
It is very competent, it can be sufficiently close together the atomic nucleus of radioactive material lattice atoms, elastic collision, lattice atoms occur with atomic nucleus
Energy is obtained in an impact, to leave its normal lattice position, becomes the interstitial atom in lattice, in its original position
A vacancy is left, if vacancy and interstitial atom can produce compound still within the scope of its elastic force-field and the coulomb field of force.If
Beyond this field of force, interstitial atom would not restore, and cause discomposition.Vacancy can be combined with adjacent atom, also can vacancy
It is combined with vacancy, vacancy can be also moved near impurity, at vacancy impurity complexes, impurity be made to be not involved in conduction, to change
Become impurity concentration.The displacement of single atom forms simple defect, referred to as Frenkel defect, if the energy of incident neutron is enough
Greatly, the interstitial atom of displacement is made to obtain enough energy, the collision of this interstitial atom can be such that a large amount of atom in lattice produces
Raw displacement, forms a large amount of defect clusters.For example, the average energy that initial displacement atom obtains is when incident neutron energy is 1MeV
72.5keV, and the displacement threshold energy of a silicon atom is only 15eV.So initial displacement atom, which will be displaced end-of-range at it, to be caused
Considerable lattice lattice atoms leave their lattice position, generate displacement, form defect cluster.These displacement damages by
The radiation defect for having one or more energy levels stable is generated in band gap, to have an important influence on to electrical properties.
Many decades have been carried out in neutron irradiation displacement damage effect research caused by bipolar junction transistor, from last century
The late nineteen eighties start with NIEL method to evaluate the degeneration of transistor current gain.This method can to current gain into
Row quantization signifying, and the influence of different-energy neutron can be normalized.Messenger-Spratt equation describes
The relationship of transistor gain and irradiation fluence:
Δ (1/ β)=(W2/2DB)·K·φ
Δ (1/ β) is the variation of initial current gain inverse in formula；W is the effective base width of transistor；DBFor carrier
Diffusion coefficient, raying damage are smaller；K is neutron displacement damage constant, related with projectile energy and type；φ is incidence
The fluence of particle.It is very big that above formula shows that displacement damage effect gain caused by bipolar device damage has with effective base width
Relationship.Therefore the transverse structure transistor for having larger base width damages displacement compared to vertical structure and substrat structure transistor
It is more sensitive to hurt effect, can produce significant degeneration under lower neutron fluence, as shown in Figure 1.As long as it can be seen that obtaining
The equivalent neutron of 1MeV in certain transistor caused by the displacement damage factor, so that it may go the transistor to measure it as detector
The equivalent neutron fluence of 1MeV under his environment.That is in the case where identical transistor gain is damaged, corresponding 1MeV etc.
It is identical for imitating neutron fluence.
The technical solution of the invention is as follows provide it is a kind of utilize transverse structure transistor displacement damage effect carry out spallation
The method of the equivalent neutron fluence measurement of neutron source 1MeV, comprising the following steps:
Step 1, screening transverse structure transistor sample；
The collector and base voltage of m transverse structure transistor are scanned, measures collector and base current, and calculate
To fixed collector current ICUnder transverse structure transistor gain, by the gain inequality opposite sex be less than setting value n transverse structure
Transistor is as sample, wherein m >=n；
Neutron displacement damage caused by transverse structure transistor is normal in sample under step 2, the acquisition equivalent neutron fluence of 1MeV
Number K；
Step 2.1 the parts transversely structure transistor in step 1 sample is not added biasing progress pile neutron irradiation,
Collector and base current are measured under different neutron fluence points, and are calculated there is identical fixed collector with step 1
Electric current ICUnder corresponding transverse structure transistor gain；
Step 2.2, the measurement equivalent neutron fluence of reactor irradiation 1MeV；
The reaction that step 2.3, the inverse of the transverse structure transistor gain obtained according to step 2.1 and step 2.2 obtain
Heap irradiates the equivalent neutron fluence of 1MeV, calculates the neutron displacement damage constant K of transverse structure transistor；
Step 3 obtains the equivalent neutron fluence of spallation neutron target 1MeV；
The transverse structure transistor that pile neutron unreacted in step 1 sample irradiates is placed in spallation neutron target neutron irradiation
Environment is irradiated, and measuring it has identical fixed collector current I with step 1CUnder transverse structure transistor gain, benefit
The neutron displacement damage constant K obtained with the variable quantity of its gain inverse divided by step 2 obtains spallation neutron target in this period
The equivalent neutron fluence of the 1MeV of interior accumulation.The variable quantity of gain inverse refers to: the inverse of the gain obtained in the step subtracts step
The inverse of gain results is measured in 11.
Further, I in step 1CMaxgain value, i.e. I in corresponding gain-base emitter-base bandgap grading scanning voltage relationshipCYing Zeng
Gain maximum value is nearby chosen in benefit-base emitter-base bandgap grading scanning voltage relationship, i.e., selects gain maximum corresponding in initial electrical parameter
ICAs benchmark.
Further, setting value described in step 1 is 5%, i.e., the n transverse structure by the gain inequality opposite sex less than 5% is brilliant
Body pipe is as sample.
It further, is each transverse structure transistor performance indicator parameter having the same in guarantee sample, m in step 1
A transverse structure transistor is same batch.
Further, when measuring collector and base current in step 1, test condition meets collector positively biased, emitter
It is reverse-biased, scan base voltage.
Further, in step 2.1 pile neutron irradiation test, transverse structure transistor circuit pin is all shorted；
Reactor operation power is kept constant.
Further, step 2.1 measures collector and base current using long line under different neutron fluence points.
Further, step 2.2 specifically: carry out companion using transverse structure transistor sample of more foil activations to irradiation
With measurement, the equivalent neutron fluence of 1MeV of reactor irradiation accumulation is obtained.
Further, when carrying out neutron irradiation test in step 2 and step 4, transverse structure transistor concentration is closely laid,
Line inhomogeneities is avoided to affect.
The beneficial effects of the present invention are:
(1) method that the present invention uses is linear using bipolar junction transistor gain inverse and the equivalent neutron fluence of 1MeV
The characteristics of relationship, realization are calculated in spallation based on damage factor of the equivalent neutron of reactor 1MeV on transverse structure transistor
The equivalent neutron fluence of component 1MeV, this method can keep higher measurement accuracy within the scope of very wide neutron fluence.
(2) present invention selects transverse structure transistor to carry out the equivalent neutron fluence measurement of spallation neutron target 1MeV, due to cross
It is more sensitive to displacement damage effect compared with vertical structure transistor to structure transistor, it is lower to be more suitable for spallation neutron target
Neutron fluence environment in use, avoid sample with the test of duration line and activate influence to tester, method is low in cost,
It is easy to accomplish.
Detailed description of the invention
Fig. 1 is the relation curve of different structure bipolar junction transistor current gain inverse and neutron fluence；
Fig. 2 is that the present invention is surveyed using the equivalent fluence of transverse structure transistor displacement damage effect progress spallation neutron target 1MeV
Measure the method flow diagram of preferred embodiment.
Specific embodiment
The present invention is further described through below in conjunction with drawings and the specific embodiments.
As shown in Fig. 2, the present invention is equivalent using transverse structure transistor displacement damage effect progress spallation neutron target 1MeV
The preferred embodiment steps flow chart of neutron fluence measurement is as follows:
(1) selection transverse structure bipolar junction transistor carries out the survey of current gain parameter with batch sample, and to device sample
Examination obtains the Relation Parameters of the collector current of the device, base current, gain and base stage scanning voltage as reference standard.
In gain maximum value corresponding collector current selected around as standard, it is good to filter out the gain parameter consistency under the electric current
Good sample should be less than 5% as irradiation object, sample gain parameter consistency difference.
(2) 6 devices are selected to carry out neutron position on reactor in the transverse structure transistor device sample filtered out
Damage effect irradiation is moved, biasing is not added in device in irradiation process, and transverse structure transistor circuit pin is all shorted and collects as far as possible
In closely lay.Current gain parameter testing, test condition and screening test item are carried out to device on fixed irradiation fluence point
Part is completely the same, and obtains fixing the collector current (collector current in the electric current and step (1) under different neutron fluence points
Unanimously) corresponding transverse structure transistor gain.Reactor operation power should be kept constant in irradiation process, utilize activation foil side
Method measures the equivalent neutron fluence of 1MeV finally accumulated.
(3) degeneration for calculating transverse structure transistor gain inverse, obtains transistor gain inverse and the equivalent neutron of 1MeV
The linear relationship of fluence, the corresponding slope of the linear relationship are the equivalent neutron displacement damage of 1MeV of the transverse structure transistor
Constant K.
(4) it not irradiated transverse structure transistor will be screened will be placed in spallation neutron target neutron streaming environment and carry out one
Displacement damage caused by neutron is accumulated in the irradiation fixed time.Increased after irradiation using electric current of the same test condition to transistor
Beneficial parameter is tested, and obtains the current gain after irradiation under identical collector current.By the degeneration of transistor gain inverse
During this period of time spallation neutron target can be obtained divided by the equivalent neutron displacement damage constant K of 1MeV of transverse structure transistor in value
The equivalent neutron fluence of the 1MeV of offer.
Claims (9)
1. a kind of method of the equivalent neutron fluence measurement of spallation neutron target 1MeV, which comprises the following steps:
Step 1, screening transverse structure transistor sample；
The collector and base voltage of m transverse structure transistor are scanned, collector and base current are measured, and is calculated solid
Determine collector current ICUnder transverse structure transistor gain, by the gain inequality opposite sex be less than setting value n transverse structure crystal
Pipe is as sample, wherein m >=n；
Neutron displacement damage constant K caused by transverse structure transistor in sample under step 2, the acquisition equivalent neutron fluence of 1MeV；
Step 2.1 the parts transversely structure transistor in step 1 sample is not added biasing progress pile neutron irradiation, not
With measuring collector and base current under neutron fluence point, and it is calculated there is identical fixed collector current with step 1
ICUnder corresponding transverse structure transistor gain；
Step 2.2, the measurement equivalent neutron fluence of reactor irradiation 1MeV；
The reactor spoke that step 2.3, the inverse of the transverse structure transistor gain obtained according to step 2.1 and step 2.2 obtain
According to the equivalent neutron fluence of 1MeV, the neutron displacement damage constant K of transverse structure transistor is calculated；
Step 3 obtains the equivalent neutron fluence of spallation neutron target 1MeV；
The transverse structure transistor that pile neutron unreacted in step 1 sample irradiates is placed in spallation neutron target neutron irradiation environment
It is irradiated, measuring it has identical fixed collector current I with step 1CUnder transverse structure transistor gain, utilize it
The neutron displacement damage constant K that the variable quantity of gain inverse is obtained divided by step 2 obtains spallation neutron target and during this period of time tires out
The equivalent neutron fluence of long-pending 1MeV.
2. the method for the equivalent neutron fluence measurement of spallation neutron target 1MeV according to claim 1, it is characterised in that: step
I in 1CMaxgain value in corresponding gain-base emitter-base bandgap grading scanning voltage relationship.
3. the method for the equivalent neutron fluence measurement of spallation neutron target 1MeV according to claim 2, it is characterised in that: step
Setting value described in 1 is 5%.
4. the method for the equivalent neutron fluence measurement of spallation neutron target 1MeV according to claim 1, it is characterised in that: step
M transverse structure transistor is same batch in 1.
5. the method for the equivalent neutron fluence measurement of spallation neutron target 1MeV according to claim 4, it is characterised in that: step
When measuring collector and base current in 1, test condition meets collector positively biased, and emitter is reverse-biased, scans base voltage.
6. the method for the equivalent neutron fluence measurement of spallation neutron target 1MeV according to claim 1, it is characterised in that: step
In 2.1 pile neutron irradiation tests, transverse structure transistor circuit pin is all shorted；Reactor operation power keeps permanent
It is fixed.
7. the method for the equivalent neutron fluence measurement of spallation neutron target 1MeV according to claim 6, it is characterised in that: step
2.1 measure collector and base current using long line under different neutron fluence points.
8. the method for the equivalent neutron fluence measurement of spallation neutron target 1MeV according to claim 7, it is characterised in that: step
2.2 specifically: carry out obtaining reactor irradiation with measurement using transverse structure transistor sample of more foil activations to irradiation
The equivalent neutron fluence of the 1MeV of accumulation.
9. the method for the equivalent neutron fluence measurement of spallation neutron target 1MeV according to claim 1, it is characterised in that:
When carrying out neutron irradiation test in step 2 and step 4, transverse structure transistor concentration is closely laid.
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| CN111341838B (en) * | 2020-03-09 | 2021-05-07 | 华东师范大学 | Application of silicon isotope Si-30 in semiconductor material or semiconductor device for resisting radiation of medium-high energy neutrons |
| CN112817033B (en) * | 2021-01-05 | 2021-11-23 | 中国原子能科学研究院 | Method and device for determining inclination irradiation fluence of device to be measured and electronic equipment |
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