CN106676493A - Ball-point pen support surface modification method - Google Patents
Ball-point pen support surface modification method Download PDFInfo
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- CN106676493A CN106676493A CN201611020209.XA CN201611020209A CN106676493A CN 106676493 A CN106676493 A CN 106676493A CN 201611020209 A CN201611020209 A CN 201611020209A CN 106676493 A CN106676493 A CN 106676493A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/343—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one DLC or an amorphous carbon based layer, the layer being doped or not
Abstract
The invention relates to a ball-point pen support surface modification method. The method includes the steps that a pen support is subject to initial surface washing; the surface of the pen support obtained after surface washing is subject to surface deep washing and polishing, and sonic oscillation is carried out in the washing and polishing process; the pen support obtained after surface deep washing and polishing is subject to ion implantation, a pinning layer is formed, and sonic oscillation is carried out in the ion implantation process; and a film layer is deposited on the pinning layer. By means of the method in the embodiment, through the manner combining ion implantation and coating film deposition, the ball-point pen support surface hardness is obviously improved, and the friction coefficient lower than that of tungsten carbide can be obtained. The ball-point pen support surface modification method is simple, easy to operate, low in cost, high in efficiency and very suitable for industrialized volume production.
Description
Technical field
The present invention relates to ball pen manufacturing technology field, more particularly to a kind of surface modifying method of ball pen pen tray.
Background technology
The operation principle of existing ball pen：Under the double action of the gravity of the pressure and ink of air, in pen core
In the ball seat of ink flow direction nib, it is attached on ball.Ball pen writes principle, is straight with paper when writing using ball
The frictional force for producing is contacted, ball is rolled in ball seat, take the ink (ink) of fibertip pen in-core out of, form writing.
The nib of ball pen is made up of two core components：Metal ball (an also referred to as pearl) and the gold of taper
Category base (also referred to as ball seat or pen tray).Ball is a pure ball, but ball seat is not simple bowl-shape, and has each
Tiny groove is planted, process is extremely complex, and the requirement to precision is also very high.Need to bear very big pressure during due to writing
Power, a pearl of nib and pen tray need to be made of very rigid wear-resisting material.At present the most frequently used material be stainless steel and
Tungsten carbide.The quality of the latter is good, and length writes all also very smooth to use time again, but the processing too high of tungsten carbide hardness gets up very tired
Difficulty, processing cost is very high.Stainless steel hardness for tungsten carbide is low, not wear-resisting, the life-span of ball pen and substantially reduce.
The content of the invention
It is modified, it is necessary to carry out surface to stainless steel to solve the above problems, the increase of its hardness is wear-resistant, meets or exceeds
" pen tray " performance and parameter with tungsten carbide as base material, raising made using the ball pen life-span that stainless steel is base material work " pen tray ",
The cost of ball pen can also be reduced simultaneously.
In consideration of it, the embodiment of the invention provides a kind of surface modifying method of ball pen pen tray, comprise the following steps：
S110, carries out surface and tentatively cleans to described pearl；S120, the pen tray surface after surface clean carry out case depth cleaning,
Polishing, and sonic oscillation is carried out in cleaning, polishing process；S130, ion is carried out to the pen tray after case depth cleaning, polishing
Injection, forms " pinning layer ", and sonic oscillation is carried out in ion implantation process；On S140, in the pinning layer ", deposition
Film layer.
Preferably, surface clean polishing is carried out to described bead surface using gas ion source.
It is further preferred that the ion gun is Hall source.
Preferably, in surface ion injection process is carried out, heated.
Preferably, the injection element of the ion implanting is metal element Ti, Cr, C, Co or Hf.
Preferably, the ion implantation device is metal vapor vacuum arc MEVVA ion implantation devices.
Preferably, beam diameter during ion implanting is 800mm.
Preferably, filtered cathodic vacuum arc system is used during depositional coating.
Preferably, the film layer is DLC DLC film layer.
Preferably, the thickness of the film layer is 0-3 μm.
Relative to prior art, the embodiment of the present invention has the advantage that：
(1) one layer effective " pinning layer " is formd in substrate sub-surface using ion implantation technique, subsequent film can
With " pinning layer " extraordinary combination, compared to the method such as magnetron sputtering, multi-arc ion coating and chemical vapor deposition, the present invention
The film layer of preparation is more superior with the adhesion of substrate.
(2) compared to deposition process such as magnetron sputtering, electroplating deposition, electron beam evaporations, filtered cathodic vacuum arc equipment is former
Sub- ionization level is very high, about more than 95%.So, because atom ionization level is high, can increase plasma density, film forming
When bulky grain reduce, be conducive to improving film hardness, wearability, compactness, film-substrate cohesion etc..
(3) transporting distance by adjusting plasma can prepare ultrahigh hardness, the diamond-like carbon film layer of super abrasive, this technology
The thicknesses of layers of the pure DLC DLC film layer of super thick can be prepared up to 20 microns, the film hardness is more than 80Gpa.
Brief description of the drawings
The accompanying drawing for constituting embodiment of the present invention part is the embodiment of the present invention to be further understood for providing, not structure
Into limitation of the present invention.
Fig. 1 is ball pen structural representation provided in an embodiment of the present invention；
Fig. 2 is a kind of modified schematic flow sheet in ball pen pen tray surface provided in an embodiment of the present invention；
Fig. 3 is the stainless steel PVvalue testing result figure being surface-treated；
Fig. 4 is the PVvalue testing result figure of the stainless steel with DLC films deposited layer；
Fig. 5 is tungsten carbide PVvalue testing result figure.
Description of reference numerals:
1-pen core body；2-pen and ink；3-pen tray；A 4-pearl；
Specific embodiment
Below by drawings and Examples, technical scheme is described in further detail.Should be understood to
These embodiments are only used for specifically describing in more detail, but are not intended to limit the scope of the invention.
In addition it is also necessary to explanation, this part to the present invention experiment used in material and test method enter
The general description of row.Although for realize many materials that the object of the invention used and operating method be it is known in the art that
But the present invention is still described in detail as far as possible herein.It will be apparent to those skilled in the art that within a context, if do not said especially
Bright, material therefor of the present invention and operating method are well known in the art.
Embodiment one
Fig. 1 is ball pen structural representation provided in an embodiment of the present invention, as shown in figure 1, the pen core bag of ball pen
Pen core body 1, pen and ink 2, pen tray 3 and a pearl 4 are included, in using writing process, a pearl 4 produces friction with paper directly contact
Power, makes a pearl 4 be rolled in pen tray 3, and the pen and ink 3 taken out of in pen core body 1 form writing.But stainless steel hardness is low, intolerant to
Mill so that the ball pen life-span of " pen tray " with stainless steel as base material is not high, present embodiments provides a kind of table of ball pen pen tray
Surface modification process, carries out preliminary cleaning and depth cleaning to " pen tray " with stainless steel as base material first, then carries out ion note
Enter, formd " pinning layer " in substrate sub-surface, increase the adhesion of subsequent film and substrate, finally carry out deposition plating, increase
The wearability of strong stainless steel " pen tray ", improves the service life of ball pen.Fig. 2 is a kind of ball pen provided in an embodiment of the present invention
The modified schematic flow sheet in pen tray surface, as described in Figure 2, the described method comprises the following steps：
S110, carries out surface and tentatively cleans to pen tray.
In one example, it is the greasy dirt on removal pen tray surface, pen tray is tentatively cleaned, alternatively, organic molten
It is cleaned by ultrasonic in agent, for example, being cleaned by ultrasonic to it in absolute ethyl alcohol or acetone.
S120, the pen tray surface after surface clean carries out case depth cleaning, polishing, and in cleaning, polishing process
Carry out sonic oscillation.
Pen tray i.e. to step S110 treatment carries out case depth cleaning, polishing.In one example, it is removal pen tray
The oil residues not removed in the dust on surface, bulky grain and step S110, depth cleaning is carried out to pen tray surface.Specifically
Ground, the pen tray after preliminary cleaning is placed on the sample stage in vacuum chamber, and its surface is carried out by gas ion source then
Cleaning, i.e., being sputtered by gas carries out surface clean, for example, being cleaned to stainless steel steel disc surface by Hall source, that is, leads to
Hall gas ion source is crossed to clean pen tray surface.It should be noted that be the completeness of pen tray cleaning, in cleaning process
In, it is necessary to sample stage is with sonic oscillation, to ensure that pen tray each several part can be cleaned.As a kind of optional embodiment,
Process time is 0-30min, preferably 20-30min.In processing procedure, gas ion source line is 200-300mA.Depth
Cleaning, can not only remove the debris on pen tray surface, also act polishing action, make its surface more smooth, reduce coefficient of friction, and
And the adhesion that subsequent ion injects " pinning layer " to be formed and pen tray can be improved.
S130, ion implanting is carried out to the pen tray after surface clean, polishing, is formed " pinning layer ", and in ion implanting mistake
Sonic oscillation is carried out in journey.
Ion implanting is carried out to the pen tray after step S120 treatment, specifically, using high-energy metals ion or non-gold
Category ion implanting pen tray substrate, forms " pinning layer ", improves the adhesion of its surface subsequent deposition film layer and pen tray substrate.
In one example, ion implanting is carried out to the pen tray after surface clean, polishing using ion injection method, specifically
To carry out metal ion implantation, in the process, ion implantation device is preferably metal vapor vacuum arc (Metal Valuume
Vapor avc, MEVVA) ion implantation device.Injection element, in principle, can inject all conductive metal elements, preferably
The elements such as Ti, Cr, C, Co, Hf.In an embodiments possible, beam intensity during ion implanting is 5-20mA, preferably
10-15mA；Dosage during ion implanting is 1 × 1016-1×1018/cm2；Implantation Energy is 10-100KeV.Preferably, ion note
Fashionable injection depth is 10-800nm.Line area when MEVVA ion implantation devices carry out ion implanting is big, and its line is straight
Footpath can realize the large batch for the treatment of of pen tray, low cost, efficiency high up to 800mm.
It should be noted that be the uniformity of pen tray ion implanting and comprehensive, it is necessary in sample stage with sonic oscillation,
To ensure that pen tray each several part can inject element.
In addition, MEVVA ion implantation devices are when ion is injected, the temperature in equipment may be selected, you can to realize high temperature
Doping, it is also possible to adulterated under normal temperature or low temperature.If high temperature dopant, heating can be set under sample stage in ion implanting
Groove, or heating tube is set in vacuum chamber, heats to pen tray, for example, pen tray can be carried out in the range of 25 DEG C~500 DEG C from
Son injection, is conducive to ion to be spread to pen tray depths, makes its anti-wear performance more preferably, and the service life of ball pen is longer.
S140, on " pinning layer ", depositional coating.
In one example, using filtered cathodic vacuum arc (filtered cathodic vacuum arc, FCVA)
System, while being passed through reacting gas, obtains wear-resisting film layer in substrate " pinning layer " surface, Magnetic filter deposition.In this step, may be used
Selection of land, film layer is DLC DLC film, and the thickness of DLC film is 0-3 μm.In an embodiments possible, bar is deposited
Part is：Deposition negative pressure is 300V-800V, dutycycle 20%-100%, and air inflow 200-300sccm, sedimentation time is 50-
100min。
The raising ball pen pen tray case hardness that the present embodiment is provided, the method for reducing coefficient of friction, mainly uses magnetic
Filtering cathode vacuum arc system carries out deposition plating, and on pen tray surface, one hardness of formation is high, compactness is high, membranous layer binding force is strong
Film, the wearability of enhancing stainless steel " pen tray " improves the service life of ball pen.In addition, it is sharp because before deposition plating
With ion injection method, " pinning layer " is formd in the sub-surface of base material, further increase subsequent deposition film layer with substrate
Adhesion, improves the wearability of film, reduces its coefficient of friction.
Preferably to embody the technical scheme provided using the present invention, pen tray can obtain more preferable anti-wear performance, to not carrying out
The modified pen tray in surface, the pen tray of depositional coating and " pen tray " with tungsten carbide as base material carry out Performance comparision.
It should be noted that above-mentioned three kinds of pen trays carry out wearability experiment to it, and observe its coefficient of friction.Above-mentioned three
Plant pen tray carries out, to mill, surveying its anti-wear performance with " pearl " with untreated stainless steel as base material.When wherein, to mill experiment
Condition is identical, such as, experimental facilities is identical, mutually equal to time consuming.Below by taking stainless steel steel disc as an example, it is discussed in detail, with not
Rust steel is the surface modifying method of " pen tray " of base material.
Embodiment two
Stainless steel steel disc is chosen, surface is not carried out to it and is modified, itself and untreated stainless steel steel disc are carried out, to mill, to survey
Its anti-wear performance, the specific test result of its coefficient of friction is as shown in Figure 3.
Embodiment three
The method provided using embodiment one, to carrying out surface modification treatment with stainless steel steel disc, implementation steps are as follows：
S110, preliminary cleaning：
Stainless steel steel disc is cleaned by ultrasonic in absolute ethyl alcohol, a preliminary removal bead surface greasy dirt.
S120, depth cleaning, polishing：
Stainless steel steel disc after preliminary cleaning is put on the sample stage in vacuum chamber, Hall gas ion source is to stainless steel
Steel disc carries out surface clean, while sample stage is with sonic oscillation.Injection condition is：The line of Hall gas ion source is
260mA, process time is 26min.
S130, ion implanting：
Surface ion injection is carried out to stainless steel steel disc using MEVVA ion implantation devices, specific injection element is Ti units
Element, Implantation Energy is 80KeV, and implantation dosage is 6 × 1016/cm2。
S140, depositional coating：
Using 180 degree magnetic filter DLC film, deposition process are deposited on the stainless steel steel disc after step S130 treatment
In, acetylene gas are passed through, deposition arc source is the Ti arcs source of purity 99%, and C negative electrodes striking current is 110A, Magnetic filter magnetic field intensity
It is 10mT, negative pressure is 400V, and dutycycle is 35%, and sedimentation time is 75min.
Anti-wear performance test subsequently is carried out to the stainless steel steel disc after above-mentioned treatment, the specific test result of its coefficient of friction is such as
Shown in Fig. 4.In addition, thickness measure and hardness test are also carried out to it, thicknesses of layers is obtained for 20 is micro- after the treatment of survey
Rice, hardness is more than 80Gpa.
Example IV
Tungsten carbide base material is chosen, surface is not carried out to it and is modified, itself and untreated stainless steel steel disc are carried out, to mill, to survey
Its anti-wear performance, the specific test result of its coefficient of friction is as shown in Figure 5.
From Fig. 3-Fig. 5, the coefficient of friction of untreated stainless steel steel disc is maximum, and about 0.65, tungsten carbide takes second place, about
It is 0.38, the stainless steel steel disc coefficient of friction by deposition plating is minimum, about 0.09.By stainless after deposition plating treatment
Steel steel disc its coefficient of friction is reduced more than 6 times, i.e., its wearability is improve more than 6 times, and is 4 times of tungsten carbide base material wearability.
That is, the surface modifying method that the present invention is provided, significantly reduces the coefficient of friction of " pen tray " with stainless steel as base material, in other words
Say, the hardness of " pen tray " of the raising with stainless steel as base material of the surface modifying method energy highly significant that the present invention is provided, enhancing
The wearability of stainless steel " pen tray ", improves the service life of ball pen.
The raising ball pen pen tray case hardness that the present embodiment is provided, the method for reducing coefficient of friction, mainly uses magnetic
Filtering cathode vacuum arc system carries out deposition plating, pen tray surface formed hardness it is high, compactness is high, membranous layer binding force is strong
Film, the wearability of enhancing stainless steel " pen tray " improves the service life of ball pen.In addition, it is sharp because before deposition plating
With ion injection method, " pinning layer " is formd in the sub-surface of base material, further increase subsequent deposition film layer with substrate
Adhesion, improves the wearability of film, reduces its coefficient of friction.Method i.e. provided in an embodiment of the present invention, is noted by ion
Enter the mode being combined with deposition plating, hence it is evident that there is provided the case hardness of ball pen pen tray, can obtain lower than tungsten carbide
Coefficient of friction.Because its method is simple, easy to operate, and low cost, efficiency high, it is especially suitable for industrial mass production.
Although it should be noted that present invention has been a certain degree of description, it will be apparent that, it is of the invention not departing from
Under conditions of spirit and scope, the appropriate change of each condition can be carried out.Can be understood as the invention is not restricted to the embodiment party
Case, and it is attributed to the scope of claim, its equivalent for including each factor.
Above-described specific embodiment, has been carried out further to the purpose of the present invention, technical scheme and beneficial effect
Describe in detail, should be understood that and the foregoing is only specific embodiment of the invention, be not intended to limit the present invention
Protection domain, all any modification, equivalent substitution and improvements within the spirit and principles in the present invention, done etc. all should include
Within protection scope of the present invention.
Claims (10)
1. a kind of surface modifying method of ball pen pen tray, it is characterised in that comprise the following steps：
S110, carries out surface and tentatively cleans to the pen tray；
S120, the pen tray surface after surface clean carries out case depth cleaning, polishing, and is carried out in cleaning, polishing process
Sonic oscillation；
S130, ion implanting is carried out to the pen tray after case depth cleaning, polishing, is formed " pinning layer ", and in ion implanting mistake
Sonic oscillation is carried out in journey；
On S140, in the pinning layer ", depositional coating.
2. method according to claim 1, it is characterised in that surface is carried out to described bead surface using gas ion source
Cleaning polishing.
3. method according to claim 3, it is characterised in that the ion gun is Hall source.
4. method according to claim 1, it is characterised in that in surface ion injection process is carried out, carry out at heating
Reason.
5. method according to claim 1, it is characterised in that the injection element of the ion implanting be metal element Ti,
Cr, C, Co or Hf.
6. method according to claim 1, it is characterised in that the ion implantation device is metal vapor vacuum arc
MEVVA ion implantation devices.
7. method according to claim 1, it is characterised in that beam diameter during ion implanting is 800mm.
8. method according to claim 1, it is characterised in that filtered cathodic vacuum arc is used during depositional coating and is set
It is standby.
9. method according to claim 1, it is characterised in that the film layer is DLC DLC film layer.
10. method according to claim 1, it is characterised in that the thickness of the film layer is 0-3 μm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611020209.XA CN106676493B (en) | 2016-11-14 | 2016-11-14 | A kind of surface modifying method of ball pen pen tray |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611020209.XA CN106676493B (en) | 2016-11-14 | 2016-11-14 | A kind of surface modifying method of ball pen pen tray |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6086962A (en) * | 1997-07-25 | 2000-07-11 | Diamonex, Incorporated | Method for deposition of diamond-like carbon and silicon-doped diamond-like carbon coatings from a hall-current ion source |
| CN1851041A (en) * | 2006-05-19 | 2006-10-25 | 哈尔滨工业大学 | Bearing outer ring ball track ion injection and deposition combined treatment method |
| CN101501813A (en) * | 2006-08-03 | 2009-08-05 | 科里普瑟维斯赛尔公司 | Process and apparatus for the modification of surfaces |
| CN102087962A (en) * | 2009-12-04 | 2011-06-08 | 中芯国际集成电路制造(上海)有限公司 | Method for diffusing ions and method for forming semiconductor device |
| CN105755443A (en) * | 2016-02-26 | 2016-07-13 | 北京师范大学 | Method and equipment for prolonging life of push rod component in aerospace relay |
-
2016
- 2016-11-14 CN CN201611020209.XA patent/CN106676493B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6086962A (en) * | 1997-07-25 | 2000-07-11 | Diamonex, Incorporated | Method for deposition of diamond-like carbon and silicon-doped diamond-like carbon coatings from a hall-current ion source |
| CN1851041A (en) * | 2006-05-19 | 2006-10-25 | 哈尔滨工业大学 | Bearing outer ring ball track ion injection and deposition combined treatment method |
| CN101501813A (en) * | 2006-08-03 | 2009-08-05 | 科里普瑟维斯赛尔公司 | Process and apparatus for the modification of surfaces |
| CN102087962A (en) * | 2009-12-04 | 2011-06-08 | 中芯国际集成电路制造(上海)有限公司 | Method for diffusing ions and method for forming semiconductor device |
| CN105755443A (en) * | 2016-02-26 | 2016-07-13 | 北京师范大学 | Method and equipment for prolonging life of push rod component in aerospace relay |
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| CN106676493B (en) | 2019-10-01 |
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